CN103872461A - Si substrate field effect transistor terahertz detector antenna based on CMOS manufacturing process - Google Patents
Si substrate field effect transistor terahertz detector antenna based on CMOS manufacturing process Download PDFInfo
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Abstract
The invention discloses a Si substrate field effect transistor terahertz detector antenna based on a CMOS manufacturing process, and belongs to the field of antennas. The Si substrate field effect transistor terahertz detector antenna comprises a semi-circular micro-strip patch antenna body with a T-shaped groove, a silicon substrate FET and a low-noise amplifier; the semi-circular micro-strip patch antenna body is used for receiving THz waves, converting the received THz waves into electric signals, and sending the electric signals to the FET, the FET converts high-frequency signals into low-frequency signals and sends the low-frequency signals to the low-noise amplifier, and detection of THz signals can be finally achieved after the signals are amplified by the low-noise amplifier. The Si substrate field effect transistor terahertz detector antenna has important application in the fields of security scanning, radio astronomy, biologic remote sensing, production monitoring and the like.
Description
Technical field
The present invention relates to antenna technology and Terahertz Technology, particularly micro-strip paster antenna technology.
Background technology
Terahertz (THz) ripple refer to frequency at 0.1THz to the electromagnetic wave of 10THz scope, wavelength at 0.03mm within the scope of 3mm, between millimeter wave and infrared between, i.e. the juncture area of common thought electronics and optics.But due to the higher loss in air of THz ripple, need the emission source of high-gain and enough sensitive exploring antenna, make it in communications field commercialization, restrict the development of technology, therefore this frequency range is untapped white spaces, is also referred to as THz gap.
There is the features such as transient state, broadband property, high time and spatial coherence, low energy and unique transmission characteristic due to THz wave, make it in safety monitoring, Spectrum Analysis, imaging and communicate by letter, the field such as chemistry, biology, material science and pharmacy shows application prospect widely.And to realize above technology, and high-power Terahertz wave source or Terahertz generator just must be provided, be equipped with economy and high-quality terahertz detector and imaging device (comprising THz camera) simultaneously.
Inventor realizing in process of the present invention, finds that prior art at least exists following shortcoming and defect:
Because THz wave is in far infrared band, its thermal effect is very strong, and its detector can be divided into two classes substantially: a class is the detector that utilizes its thermal effect to make, as thermal power meter, pyroelectric detector etc.; Another kind of is the detector that utilizes its light wave character, as photoconductive detector and Schottky diode etc.These detectors often exist following problem in the time being further development of imaging device: the one, need to add extra technology and equipment, as small-sized machine etc.; The 2nd, its thermal relaxation time constant of thermal effect detector has limited the video rate in imaging process.And terahertz wave detector based on Si base field-effect transistor (FET) inversion layer plasma can overcome above shortcoming, and realize THz imaging from single cmos fet transistor by focal plane array (FPA), there is larger advantage, and the at present domestic research for is in this respect also in the starting stage.For this type of THz detector, antenna is most important parts except FET, this is not only because antenna is the most previous parts that receive THz radiation, but also have, the signal of other different frequency range is played to isolation and anti-tampering effect, a good antenna can at least make detector sensitivity improve 1～2 order of magnitude, and the terahertz detector antenna of therefore designing high-gain and high radiation efficiency has vital meaning.
Summary of the invention
In order to realize using antenna as THz ripple receiving device, using Si based fet as THz sensitive detection parts, and the common terahertz detector forming that combines with low noise amplifier, the invention process provides a kind of semicircular patch antenna of T-shaped fluting, and described technical scheme is as follows:
Antenna integrated terahertz detector, comprising: the semicircular patch antenna of T-shaped fluting, Si based fet, low noise amplifier.
The design of whole antenna is based on 0.18umCMOS manufacturing process, and Antenna Design is on top-level metallic, and FET and low noise amplifier design on bottom Si base.T-shaped fluting on this semicircular patch antenna is drawn port one and port 2 simultaneously; Port one and port 2 are connected with the grid of corresponding two FET respectively, add bias voltage V2, to improve detector sensitivity on the common source of two FET simultaneously; Semicircular patch antenna applying bias V1, to activate the threshold voltage of FET work; Terahertz (THz) signal, by after antenna reception, is converted to low frequency signal to low noise amplifier by FET by high-frequency signal; FET is connected with low noise amplifier by the microstrip transmission line (TL1 and TL2) of 50 ohm, is easy to like this realize the impedance matching of input/output port; Low noise amplifier amplifies signal, finally can realize the detection to THz signal; Semicircular patch antenna can be made focal plane array after being combined with FET, realizes the THz imaging system that sensitivity and resolution are higher.
Described antenna is semicircular patch antenna, it is characterized in that, at the T-shaped fluting in paster surface, having realized the miniaturization of antenna, simultaneously by changing the physical dimension of T-shaped groove, the output impedance that can realize port one and port 2 is 50 Europe, as the rf inputs mouth of FET, is easy to realize impedance matching.
Described this semicircular patch antenna can be by changing the radius of semicircular patch, and the physical dimension of T-shaped groove, can realize the impedance matching in other frequency range work and corresponding band.
The type of described semicircular patch antenna fluting is T-shaped groove, and it can change L-type groove and H type groove etc. into.
Described semicircular patch antenna can also be made focal plane array after being combined with FET, thereby realizes the THz imaging system that resolution is higher.
Brief description of the drawings:
In order to be illustrated more clearly in inventive embodiments or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creating work, can also obtain with reference to the accompanying drawings other accompanying drawing.
Fig. 1 is the electrical block diagram that the embodiment of the present invention provides.
Fig. 2 is semicircular patch Antenna Design example of the present invention.
Embodiment:
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
In order to realize using antenna as THz ripple receiving device, using Si based fet as THz sensitive detection parts, and the common terahertz detector forming that combines with low noise amplifier, the invention process provides a kind of semicircular patch antenna, described below:
Fig. 1 is the electrical block diagram that the embodiment of the present invention provides.With reference to Fig. 1, T-shaped fluting on this semicircular patch antenna is drawn port one and port 2 simultaneously; Port one and port 2 are connected with the grid of corresponding two FET respectively, add bias voltage V2, to improve detector sensitivity on the common source of two FET simultaneously; Terahertz (THz) signal, by after antenna reception, is converted to low frequency signal to low noise amplifier by FET by high-frequency signal; FET is connected with low noise amplifier by the microstrip transmission line (TL1 and TL2) of 50 ohm, is easy to like this realize the impedance matching of input/output port; Low noise amplifier amplifies through signal, finally can realize the detection to THz signal.
Fig. 2 is semicircular patch Antenna Design example of the present invention.With reference to Fig. 2, it comprises: semicircular patch antenna, T-shaped groove.The physical dimension of semicircular patch antenna is: r=66um, a1=5um, a2=3um, b1=70um, b2=3um, b3=64.5um, the resonance frequency of whole antenna is 650GHz, and bandwidth of operation 50GHz gains as 4dBi, impedance between port one and port 2 is 50 Europe, is easy to like this FET pipe and carries out impedance matching.
Further, can be by changing the radius of semicircular patch, the physical dimension of T-shaped groove, can realize the impedance matching in other frequency range work and corresponding band, and when specific implementation, the embodiment of the present invention is not restricted this.
Further, in order to adapt to engineering design requirement, the type of described semicircular patch antenna fluting is T-shaped groove, and it can change L-type groove and H type groove etc. into, and when specific implementation, the embodiment of the present invention is not restricted this.
In sum, the embodiment of the present invention provides a kind of Si base field-effect transistor terahertz detector antenna based on CMOS manufacturing process.This invention has important application in fields such as security scanning, radio astronomy, biological remote sensing, production monitorings.
It will be appreciated by those skilled in the art that accompanying drawing is the schematic diagram of a preferential embodiment, the invention described above embodiment sequence number, just to describing, does not represent the quality of embodiment.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (5)
1. Si base field-effect transistor (FET) the terahertz detector antenna based on CMOS manufacturing process, this antenna is the semicircular patch antenna of fluting, it is characterized in that:
T-shaped fluting on this semicircular patch antenna is drawn port one and port 2 simultaneously; Port one and port 2 are connected with the grid of corresponding two FET respectively, add bias voltage V2, to improve detector sensitivity on the common source of two FET simultaneously; Semicircular patch antenna applying bias V1, to activate the threshold voltage of FET work; Terahertz (THz) signal, by after antenna reception, is converted to low frequency signal to low noise amplifier by FET by high-frequency signal; FET is connected with low noise amplifier by the microstrip transmission line (TL1 and TL2) of 50 ohm, is easy to like this realize the impedance matching of input/output port; Low noise amplifier amplifies signal, finally can realize the detection to THz signal; Semicircular patch antenna is made focal plane array after being combined with FET, can realize the THz imaging system that sensitivity and resolution are higher.
2. according to right 1 requirement, described antenna is semicircular patch antenna, it is characterized in that at the T-shaped fluting in paster surface, realize the miniaturization of antenna, simultaneously by changing the physical dimension of T-shaped groove, the output impedance that can realize port one and port 2 is 50 Europe, as the rf inputs mouth of FET, is easy to realize impedance matching.
3. according to right 2 requirements, this semicircular patch antenna can be by changing the radius of semicircular patch, and the physical dimension of T-shaped groove, can realize the impedance matching of other type.
4. according to the requirement of right 2, the type of described semicircular patch antenna fluting is T-shaped groove, and it can change L-type groove and H type groove etc. into.
5. according to the requirement of right 1, semicircular patch antenna is made focal plane array after being combined with FET, can realize the THz imaging system that sensitivity and resolution are higher.
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| CN201410105036.6A CN103872461A (en) | 2014-03-14 | 2014-03-14 | Si substrate field effect transistor terahertz detector antenna based on CMOS manufacturing process |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105333951A (en) * | 2015-11-10 | 2016-02-17 | 中国科学院半导体研究所 | Terahertz wave detector based on field effect transistor |
| CN106450725A (en) * | 2016-10-14 | 2017-02-22 | 江苏大学 | Power synthesis antenna with multi-coupler embedded into terahertz piece |
| CN106921020A (en) * | 2017-02-27 | 2017-07-04 | 天津大学 | The THz wave thermal detector of the polysilicon antenna coupling based on CMOS technology |
| CN110390127A (en) * | 2019-06-05 | 2019-10-29 | 广东工业大学 | NMOSFET Terahertz detector array and antenna design method of the N × M based on DRA |
| CN110657887A (en) * | 2019-09-12 | 2020-01-07 | 天津大学 | Terahertz detector based on cross-coupling structure |
| CN113745815A (en) * | 2021-08-27 | 2021-12-03 | 西安交通大学 | Cooperative combined antenna working in terahertz wave band |
-
2014
- 2014-03-14 CN CN201410105036.6A patent/CN103872461A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105333951A (en) * | 2015-11-10 | 2016-02-17 | 中国科学院半导体研究所 | Terahertz wave detector based on field effect transistor |
| CN105333951B (en) * | 2015-11-10 | 2017-11-21 | 中国科学院半导体研究所 | Terahertz wave detector based on field-effect transistor |
| CN106450725A (en) * | 2016-10-14 | 2017-02-22 | 江苏大学 | Power synthesis antenna with multi-coupler embedded into terahertz piece |
| CN106450725B (en) * | 2016-10-14 | 2019-05-31 | 江苏大学 | A kind of power combing antenna of Terahertz on piece insertion multiple-path coupler |
| CN106921020A (en) * | 2017-02-27 | 2017-07-04 | 天津大学 | The THz wave thermal detector of the polysilicon antenna coupling based on CMOS technology |
| CN110390127A (en) * | 2019-06-05 | 2019-10-29 | 广东工业大学 | NMOSFET Terahertz detector array and antenna design method of the N × M based on DRA |
| CN110657887A (en) * | 2019-09-12 | 2020-01-07 | 天津大学 | Terahertz detector based on cross-coupling structure |
| CN110657887B (en) * | 2019-09-12 | 2021-07-20 | 天津大学 | Terahertz detector based on cross-coupling structure |
| CN113745815A (en) * | 2021-08-27 | 2021-12-03 | 西安交通大学 | Cooperative combined antenna working in terahertz wave band |
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Application publication date: 20140618 |