CN103943964A - Si-based field effect transistor annular terahertz detector antenna based on CMOS manufacturing process - Google Patents
Si-based field effect transistor annular terahertz detector antenna based on CMOS manufacturing process Download PDFInfo
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- CN103943964A CN103943964A CN201410134315.5A CN201410134315A CN103943964A CN 103943964 A CN103943964 A CN 103943964A CN 201410134315 A CN201410134315 A CN 201410134315A CN 103943964 A CN103943964 A CN 103943964A
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Abstract
The invention discloses a Si-based FET annular THz detector antenna based on a CMOS manufacturing process, and belongs to the field of antennas. The Si-based FET annular THz detector antenna comprises an annular antenna body, a Si-based FET and a low noise amplifier. The annular antenna body is used for receiving THz waves and meanwhile converting the received THz waves into electric signals to be transmitted to the FET, high-frequency signals are converted into low-frequency signals by the FET and are transmitted to the low noise amplifier, and finally the THz signals can be detected after the signals pass through the low noise amplifier. The Si-based FET annular THz detector antenna is importantly applied to security scanning, radio astronomy, biological remote sensing, production monitoring and other fields.
Description
Technical field
The present invention relates to antenna technology and Terahertz Technology, particularly loop aerial technology.
Background technology
Terahertz (THz) ripple refer to frequency at 0.1THz to the electromagnetic wave of 10THz scope, wavelength at 0.03mm within the scope of 3mm, between millimeter wave and infrared between, i.e. the juncture area of common thought electronics and optics.But due to the higher loss in air of THz ripple, need the emission source of high-gain and enough sensitive exploring antenna, make it in communications field commercialization, restrict the development of technology, therefore this frequency range is untapped white spaces, is also referred to as THz gap.
By THz ripple, there is transient state, broadband property, high time and spatial coherence, low energy and unique features such as transmission characteristic, make it in safety monitoring, Spectrum Analysis, imaging and communicate by letter, the field such as chemistry, biology, material science and pharmacy shows application prospect widely.And to realize above technology, and high-power THz wave source or THz generator just must be provided, be equipped with economy and high-quality THz detector and imaging device (comprising THz camera) simultaneously.
Inventor, in realizing process of the present invention, finds that prior art at least exists following shortcoming and defect:
Because THz ripple is in far infrared band, its thermal effect is very strong, and its detector can be divided into two classes substantially: a class is the detector that utilizes its thermal effect to make, as thermal power meter, pyroelectric detector etc.; Another kind of is the detector that utilizes its light wave character, as photoconductive detector and Schottky diode etc.These detectors often exist following problem when being further development of imaging device: the one, need to add extra technology and equipment, as small-sized machine etc.; The 2nd, its thermal relaxation time constant of thermal effect detector has limited the video rate in imaging process.And THz detector based on Si base field-effect transistor (FET) inversion layer plasma can overcome above shortcoming, and by focal plane array (FPA), realize THz imaging from single cmos fet transistor, there is larger advantage, and the at present domestic research for is in this respect also in the starting stage.For this type of THz detector, antenna is most important parts except FET, this is not only because antenna is the most previous parts that receive THz radiation, but also have, the signal of other different frequency range is played to isolation and anti-tampering effect, a good antenna can at least make detector sensitivity improve 1～2 order of magnitude, and the THz detector antenna of therefore designing high-gain and high radiation efficiency has vital meaning.
Summary of the invention
In order realizing, to using antenna as THz ripple receiving device, to using Si based fet as THz sensitive detection parts, and the common THz detector forming that combines with low noise amplifier, the invention process provides a kind of loop aerial, and described technical scheme is as follows:
Antenna integrated THz detector, comprising: loop aerial, Si based fet, low noise amplifier.
The design of whole antenna is based on 65nmCMOS manufacturing process, and Antenna Design is on top-level metallic, and FET and low noise amplifier design, on bottom Si base, utilize face-down bonding technique that above-mentioned device is integrated on expansion hemisphere Si lens simultaneously.On this loop aerial, draw port one and port 2 simultaneously, be connected with the grid of corresponding two FET respectively, on the common source of two FET, add bias voltage V2, to improve detector sensitivity simultaneously; Loop aerial applying bias V1, the threshold voltage of doing to activate FETT; THz signal, by after antenna reception, is converted to low frequency signal to low noise amplifier by FET by high-frequency signal; FET is connected with low noise amplifier by the microstrip transmission line (TL1 and TL2) of 50 ohm, is easy to like this realize the impedance matching of input/output port; Low noise amplifier amplifies signal, finally can realize the detection to THz signal; Loop aerial can be made focal plane array after being combined with FET, realizes the THz imaging that sensitivity and resolution are higher.
Described antenna is loop aerial, it is characterized in that utilizing the gain of expansion hemisphere Si lens raising antenna, and then improves detector sensitivity, and expansion hemisphere Si lens can change spheroid shape into and cross dome-type Si lens.
Described loop aerial has high-impedance behavior, is easy to the impedance matching of realization and FET, by changing the physical dimension of loop aerial, can also realize the impedance matching of other working frequency range.
Described loop aerial can also be made focal plane array after being combined with FET, thereby realizes sensitivity and the higher THz imaging of resolution.
Accompanying drawing explanation:
In order to be illustrated more clearly in inventive embodiments or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creating work, can also obtain with reference to the accompanying drawings other accompanying drawing.
Fig. 1 is the electrical block diagram that the embodiment of the present invention provides.
Fig. 2 is loop aerial structural representation of the present invention.
Fig. 3 is loop aerial design example of the present invention.
Embodiment:
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
In order realizing, to using antenna as THz ripple receiving device, to using Si based fet as THz sensitive detection parts, and the common THz detector forming that combines with low noise amplifier, the invention process provides a kind of loop aerial, described below:
Fig. 1 is the electrical block diagram that the embodiment of the present invention provides.With reference to Fig. 1, this loop aerial is drawn port one and port 2, is connected respectively with the grid of corresponding two FET, adds bias voltage V2, to improve detector sensitivity on the common source of two FET simultaneously; THz signal, by after antenna reception, is converted to low frequency signal to low noise amplifier by FET by high-frequency signal; FET is connected with low noise amplifier by the microstrip transmission line (TL1 and TL2) of 50 ohm, is easy to like this realize the impedance matching of input/output port; Low noise amplifier amplifies through signal, finally can realize the detection to THz signal.
Fig. 2 is loop aerial structural representation of the present invention.With reference to Fig. 2, Si lens comprise the column part of hemispherical portion and expansion, and the radius of hemispherical portion is R, and the height of the column part of expansion is H, and loop aerial utilizes the CMOS design and manufacture technology of 65nm on top-level metallic, middle SiO
2thickness be H1, the design of detector and low noise amplifier is on bottom Si dielectric substrate.
Fig. 3 is loop aerial design example of the present invention, and it comprises: expansion hemisphere Si lens, loop aerial.Its physical dimension is: R=1500um, and H=185um, H1=6.8um, a=500um, d=170um, the operating frequency of whole antenna is 600GHz, gains as 13dB.
Further, in order to realize the needs of engineering, expansion hemisphere Si lens can change oval hemisphere Si lens into and cross hemisphere Si lens, and during specific implementation, the embodiment of the present invention is not restricted this.
Further, by changing the physical dimension of loop aerial, can realize the impedance matching in other frequency range work, during specific implementation, the embodiment of the present invention is not restricted this.
In sum, the embodiment of the present invention provides a kind of Si base field-effect transistor annular THz detector antenna based on CMOS manufacturing process.This invention has important application in fields such as security scanning, radio astronomy, biological remote sensing, production monitorings.
It will be appreciated by those skilled in the art that accompanying drawing is the schematic diagram of a preferential embodiment, the invention described above embodiment sequence number, just to describing, does not represent the quality of embodiment.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (4)
1. the annular Terahertz of Si base field-effect transistor (FET) (THz) detector antenna based on CMOS manufacturing process, is characterized in that:
This loop aerial and FET are integrated on Si base, the gain that simultaneously utilizes expansion hemisphere Si lens to improve loop aerial; Loop aerial impedance is larger, is easy to the impedance matching of realization and FET; Loop aerial is drawn port one and port 2, is connected respectively with the grid of corresponding two FET, adds bias voltage V2, to improve detector sensitivity on the common source of two FET simultaneously; Loop aerial applying bias V1, to activate the threshold voltage of FET work; THz signal, by after antenna reception, is converted to low frequency signal to low noise amplifier by FET by high-frequency signal; FET is connected with low noise amplifier by the microstrip transmission line (TL1 and TL2) of 50 ohm, is easy to like this realize the impedance matching of input/output port; Low noise amplifier amplifies signal, finally can realize the detection to THz signal; Loop aerial is made focal plane array after being combined with FET, can realize the THz imaging that sensitivity and resolution are higher.
2. according to the requirement of right 1, the gain that this loop aerial utilization expansion hemisphere Si lens improve antenna, and then raising detector sensitivity, expand hemisphere Si lens and can change spheroid shape into and cross dome-type Si lens.
3. according to the requirement of right 1, described antenna is loop aerial, it is characterized in that utilizing the high-impedance behavior of loop antenna, is easy to realize the impedance matching of loop aerial and FET, by changing the physical dimension of loop aerial, can also realize the impedance matching of other working frequency range.
4. according to the requirement of right 1, loop aerial is made focal plane array after being combined with FET, can realize the THz imaging that sensitivity and resolution are higher.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410134315.5A CN103943964A (en) | 2014-04-01 | 2014-04-01 | Si-based field effect transistor annular terahertz detector antenna based on CMOS manufacturing process |
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| CN201410134315.5A CN103943964A (en) | 2014-04-01 | 2014-04-01 | Si-based field effect transistor annular terahertz detector antenna based on CMOS manufacturing process |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105300530A (en) * | 2015-11-10 | 2016-02-03 | 中国科学院半导体研究所 | Terahertz wave detector with readout circuit |
| CN105333951A (en) * | 2015-11-10 | 2016-02-17 | 中国科学院半导体研究所 | Terahertz wave detector based on field effect transistor |
| CN106887670A (en) * | 2017-02-27 | 2017-06-23 | 天津大学 | The dipole antenna terahertz detector integrated with NMOS temperature sensors |
-
2014
- 2014-04-01 CN CN201410134315.5A patent/CN103943964A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105300530A (en) * | 2015-11-10 | 2016-02-03 | 中国科学院半导体研究所 | Terahertz wave detector with readout circuit |
| CN105333951A (en) * | 2015-11-10 | 2016-02-17 | 中国科学院半导体研究所 | Terahertz wave detector based on field effect transistor |
| CN105333951B (en) * | 2015-11-10 | 2017-11-21 | 中国科学院半导体研究所 | Terahertz wave detector based on field-effect transistor |
| CN105300530B (en) * | 2015-11-10 | 2018-07-31 | 中国科学院半导体研究所 | Terahertz wave detector with reading circuit |
| CN106887670A (en) * | 2017-02-27 | 2017-06-23 | 天津大学 | The dipole antenna terahertz detector integrated with NMOS temperature sensors |
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Application publication date: 20140723 |
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| WD01 | Invention patent application deemed withdrawn after publication |