CN109405860A - Based on the directly matched Ge-Si heterojunction bipolar transistor detector of antenna - Google Patents
Based on the directly matched Ge-Si heterojunction bipolar transistor detector of antenna Download PDFInfo
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- CN109405860A CN109405860A CN201811094111.8A CN201811094111A CN109405860A CN 109405860 A CN109405860 A CN 109405860A CN 201811094111 A CN201811094111 A CN 201811094111A CN 109405860 A CN109405860 A CN 109405860A
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- bipolar transistor
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- 239000003990 capacitor Substances 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims description 15
- 238000001514 detection method Methods 0.000 claims description 5
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000009131 signaling function Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
- G01D5/40—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light specially adapted for use with infrared light
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Abstract
One kind being based on the directly matched Ge-Si heterojunction bipolar transistor detector of antenna, there are the first Ge-Si heterojunction bipolar transistor and the second Ge-Si heterojunction bipolar transistor, the base stage of first Ge-Si heterojunction bipolar transistor and the second Ge-Si heterojunction bipolar transistor is separately connected antenna, the emitter of first Ge-Si heterojunction bipolar transistor and the second Ge-Si heterojunction bipolar transistor is grounded, the collector of first Ge-Si heterojunction bipolar transistor passes through the first quarter-wave microstrip line to output end, the collector of second Ge-Si heterojunction bipolar transistor passes through the second quarter-wave microstrip line to output end, capacitor is connected between the base stage of first Ge-Si heterojunction bipolar transistor and the collector of the second Ge-Si heterojunction bipolar transistor, the base stage of second Ge-Si heterojunction bipolar transistor and the first Ge-Si heterojunction bipolar transistor Collector between connect capacitor, direct current biasing cabling in antenna connects DC offset voltage.Invention increases the output responsibilities of detector.
Description
Technical field
The present invention relates to a kind of trnasistor detectors.The directly matched Ge-Si heterojunction of antenna is based on more particularly to one kind
Bipolar transistor detector.
Background technique
THz wave has many unique features: the through characteristic of THz wave makes it can be used for safety check imaging [1]；Terahertz
The black body radiation that dust is hereby largely cooled down after wave and Big Bang is in identical wave band, is carried out with THz wave to universe
It is imaged as people and depicts more full and accurate view [2]；With frequency, this is biology for the vibration of THz wave and many large biological molecules
Medical detection opens new approach [3] [4]；THz wave can provide bigger bandwidth, provide for future high-speed radiocommunication
It may.It is domestic at present to propose the terahertz detector based on field-effect tube structure, but under same process, the spy of field-effect tube
Sign frequency and cutoff frequency are far smaller than Ge-Si heterojunction bipolar transistor, so based on Ge-Si heterojunction bipolar crystal structure
Detector has more advantage in Terahertz field.
The technical problem that terahertz detector faces is: THz wave antenna and Ge-Si heterojunction bipolar transistor signal function
Transmission efficiency is low for rate；THz wave is leaked to output end, and this will substantially reduce the output of Ge-Si heterojunction bipolar transistor detector
Responsiveness increases the noise equivalent power of detector.
Therefore, terahertz detector power transmission efficiency how is improved, how how to effectively reduce the leakage of THz wave
The responsiveness for improving terahertz detector becomes problem in the urgent need to address during terahertz detection.
[bibliography]
[1]K.Cooper,R.Dengler,N.Llombart,B.Thomas,G.Chattopadhyay,and
P.Siegel,“THz imaging radar for standoff personnel screening,”IEEE Trans.THz
Sci.Technol.,vol.1,no.1,pp.169–182,Sep.2011.
[2]T.Phillips and J.Keene,“Submillimeter astronomy[heterodyne
spectroscopy],”Proc.IEEE,vol.80,no.11,pp.1662–1678,Nov.1992.
[3]Z.Taylor,R.Singh,D.Bennett,P.Tewari,C.Kealey,N.Bajwa,M.Culjat,
A.Stojadinovic,H.Lee,J.-P.Hubschman,E.Brown,and W.Grundfest,“THz medical
imaging:In vivo hydration sensing,”IEEE Trans.THz Sci.Technol.,vol.1,no.1,
pp.201–219,Sep.2011.
[4]K.Ajito,H.J.Song,A.Hirata,A.Wakatsuki,Y.Muramoto,N.Shigekawa,
T.Kumashiro,D.Asa,T.Nagatsuma,N.Kukutsu,and Y.Kado,“Continuous-wave terahertz
spectroscopic imaging at over 1THz for pharmaceutical applications,”in
Proc.Int.Conf.Infrared,Millimeter,Terahertz Waves,Sep.2010,pp.1–2.
Summary of the invention
The technical problem to be solved by the invention is to provide one kind can increase detector output responsibility based on antenna
Direct matched Ge-Si heterojunction bipolar transistor detector.
The technical scheme adopted by the invention is that: one kind is visited based on the directly matched Ge-Si heterojunction bipolar transistor of antenna
Device is surveyed, includes the first Ge-Si heterojunction bipolar transistor and the second Ge-Si heterojunction bipolar transistor for detection, it is described
The first Ge-Si heterojunction bipolar transistor and the base stage of the second Ge-Si heterojunction bipolar transistor be separately connected for receiving too
The antenna of Hertz wave signal, the hair of first Ge-Si heterojunction bipolar transistor and the second Ge-Si heterojunction bipolar transistor
Emitter-base bandgap grading is grounded, and the collector of first Ge-Si heterojunction bipolar transistor is by the first quarter-wave microstrip line to defeated
Outlet, the collector of second Ge-Si heterojunction bipolar transistor by the second quarter-wave microstrip line to output end,
It is connected between the base stage of first Ge-Si heterojunction bipolar transistor and the collector of the second Ge-Si heterojunction bipolar transistor
The collector of capacitor, the base stage of second Ge-Si heterojunction bipolar transistor and the first Ge-Si heterojunction bipolar transistor it
Between connect capacitor, direct current biasing cabling in the antenna connects DC offset voltage.
The antenna includes the paster antenna being made of the metal for being located at top, and the metal by being located at the bottom is constituted
Grounding plate, the patch is connected by through-hole by being located at the cabling that constitutes of one layer of metal, the cabling on grounding plate
Chip antenna, the through-hole are formed in the through-hole on the paster antenna center to grounding plate between one layer of metal, institute
It states and is provided with two feeder lines on paster antenna, two feeder lines are connected respectively the first Ge-Si heterojunction bipolar crystal
The base stage of pipe and the second Ge-Si heterojunction bipolar transistor.
It is of the invention based on the directly matched Ge-Si heterojunction bipolar transistor detector of antenna, solve THz wave day
Line and Ge-Si heterojunction bipolar transistor signal power the problem of transmission efficiency is low, eliminate the THz wave for being leaked to output end
Signal increases the output responsibility of detector.The invention has the following beneficial effects:
(1) input impedance of well-designed antenna and the input impedance of Ge-Si heterojunction bipolar transistor reach matching can be with
Signal power efficiency of transmission is improved, to eliminate the loss using matched design to terahertz signal；
(2) it in Ge-Si heterojunction bipolar transistor collector output two sections of a quarter transmission lines of series connection, can filter out
It is leaked to the terahertz wave signal of output end, reduces shadow of the ghost effect to detector performance that collector connects direct current biasing introducing
It rings, but does not influence the output of collector.
(3) difference terahertz signal is transported to the collector of Ge-Si heterojunction bipolar transistor, detector can be improved
Output responsibility.
Detailed description of the invention
Fig. 1 is that the present invention is based on the circuit diagrams of the directly matched Ge-Si heterojunction bipolar transistor detector of antenna；
Fig. 2 is the structural schematic diagram of inventive antenna.
In figure
1: antenna 11: grounding plate
12: paster antenna 13: direct current biasing cabling
14: through-hole 15: feeder line
Specific embodiment
Below with reference to embodiment and attached drawing to of the invention based on the directly matched Ge-Si heterojunction bipolar transistor of antenna
Detector is described in detail.
As shown in Figure 1, it is of the invention based on the directly matched Ge-Si heterojunction bipolar transistor detector of antenna, include
For the first Ge-Si heterojunction bipolar transistor B1 and the second Ge-Si heterojunction bipolar transistor B2 of detection, first germanium
The base stage of Si heterojunction bipolar transistor B1 and the second Ge-Si heterojunction bipolar transistor B2 are separately connected for receiving Terahertz
The antenna 1 of wave signal, the first Ge-Si heterojunction bipolar transistor B1 and the second Ge-Si heterojunction bipolar transistor B2's
Emitter is grounded, and the collector of the first Ge-Si heterojunction bipolar transistor B1 passes through the first quarter-wave microstrip line
The collector of W1 to output end S, the second Ge-Si heterojunction bipolar transistor B2 pass through the second quarter-wave microstrip line
W2 to output end S, the first quarter-wave microstrip line W1 and the second quarter-wave microstrip line W2 can be filtered out and be leaked to
The terahertz wave signal of output end, but the output of collector is not influenced.The base of the first Ge-Si heterojunction bipolar transistor B1
Capacitor C1, second Ge-Si heterojunction bipolar are connected between pole and the collector of the second Ge-Si heterojunction bipolar transistor B2
Capacitor C1, the antenna 1 are connected between the base stage of transistor B2 and the collector of the first Ge-Si heterojunction bipolar transistor B1
In direct current biasing cabling 13 connect DC offset voltage V.
As shown in Fig. 2, the antenna 1 includes the paster antenna 12 being made of the metal for being located at top, by being located at most
The grounding plate 11 that the metal of bottom is constituted, by being located at the cabling 13 that one layer of metal is constituted on grounding plate 11, it is described walk
Line 13 connects the paster antenna 12 by through-hole 14, and the through-hole 14 is formed in 12 center of paster antenna to ground connection
The characteristics of through-hole on metal plate 11 between one layer of metal, this connection type is that direct current biasing will not influence at the center of antenna
The electromagnetic radiation performance of antenna, and such bias mode provides DC channel for Ge-Si heterojunction bipolar transistor.The patch
Two feeder lines 15 are provided on chip antenna 12, it is brilliant that two feeder lines 15 are connected respectively first Ge-Si heterojunction bipolar
The base stage of body pipe B1 and the second Ge-Si heterojunction bipolar transistor B2.
It is of the invention based on the directly matched Ge-Si heterojunction bipolar transistor detector of antenna, be used for using paster antenna
Terahertz wave signal in reception space.Using top metal as paster antenna, bottom metal is as ground, this design
Method can separate the silicon substrate of terahertz signal and low-resistivity, therefore radiation efficiency is greatly improved.Antenna
Center is as virtual earth point, and on virtual earth point plus direct current biasing does not influence the performance of antenna.THz wave frequency is more than
When 2.5THz, loss of the received THz wave of antenna in matching network has been above matched effect, so frequency is more than
2.5THz does not use matching network generally.The input impedance of antenna and the input impedance of Ge-Si heterojunction bipolar transistor reach
With signal power efficiency of transmission can be improved.The embodiment of the present invention uses the transistor of minimum dimension, is obtained according to processing technology
The input impedance of the transistor of minimum dimension is 100 ohm, and the port Impedance of paster antenna is designed to 100 ohm, to reach
Matching between paster antenna and transistor improves signal power efficiency of transmission.In order to increase the response of terahertz detector
Degree, by the base stage and current collection for being input to Ge-Si heterojunction bipolar transistor for the terahertz signal difference that paster antenna receives
Pole.By reasonably optimizing collector direct current biasing, this design method is directly inputted to Ge-Si heterojunction than terahertz signal
The base stage of bipolar transistor and the output responsibility of collector are higher.The received a part of terahertz signal of antenna is coupled to output
End, this will substantially reduce the output responsibility of Ge-Si heterojunction bipolar transistor detector, by design two sections series connection four/
One wave microstrip line, the characteristic impedance of microstrip line are all 100 ohm as the input impedance of Ge-Si heterojunction bipolar transistor,
Exchange open circuit can be formed in the output end of detector, and direct current signal is not influenced, be leaked to output end to eliminate
Terahertz wave signal improves the output responsibility of detector.Furthermore another of concatenated two sections of a quarter microstrip lines
Effect is can to reduce collector to connect influence of the ghost effect of direct current biasing introducing to detector performance.
Claims (2)
- It include the first germanium for detection 1. one kind is based on the directly matched Ge-Si heterojunction bipolar transistor detector of antenna Si heterojunction bipolar transistor (B1) and the second Ge-Si heterojunction bipolar transistor (B2), which is characterized in that first germanium The base stage of Si heterojunction bipolar transistor (B1) and the second Ge-Si heterojunction bipolar transistor (B2) is separately connected for receiving too The antenna (1) of Hertz wave signal, first Ge-Si heterojunction bipolar transistor (B1) and the second Ge-Si heterojunction bipolar are brilliant The emitter of body pipe (B2) is grounded, the collector of first Ge-Si heterojunction bipolar transistor (B1) by the one or four/ One wave microstrip line (W1) to output end (S), the collector of second Ge-Si heterojunction bipolar transistor (B2) passes through second Quarter-wave microstrip line (W2) is to output end (S), the base stage of first Ge-Si heterojunction bipolar transistor (B1) and It is connected capacitor (C1) between the collector of two Ge-Si heterojunction bipolar transistors (B2), second Ge-Si heterojunction bipolar is brilliant It is connected capacitor (C1) between the base stage of body pipe (B2) and the collector of the first Ge-Si heterojunction bipolar transistor (B1), the day Direct current biasing cabling (13) in line (1) connects DC offset voltage (V).
- 2. according to claim 1 be based on the directly matched Ge-Si heterojunction bipolar transistor detector of antenna, feature It is, the antenna (1) includes the paster antenna (12) being made of the metal for being located at top, by the metal for being located at the bottom The grounding plate (11) of composition, the cabling (13) constituted by being located at grounding plate (11) upper one layer of metal, the cabling (13) paster antenna (12) is connected by through-hole (14), the through-hole (14) is formed in the paster antenna (12) The heart is provided with two feeder lines (15) on the paster antenna (12) to the through-hole between the upper one layer of metal of grounding plate (11), Two feeder lines (15) are connected respectively first Ge-Si heterojunction bipolar transistor (B1) and the second Ge-Si heterojunction The base stage of bipolar transistor (B2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811094111.8A CN109405860B (en) | 2018-09-19 | 2018-09-19 | Germanium-silicon heterojunction bipolar transistor detector based on antenna direct matching |
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| CN201811094111.8A CN109405860B (en) | 2018-09-19 | 2018-09-19 | Germanium-silicon heterojunction bipolar transistor detector based on antenna direct matching |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110044476A (en) * | 2019-04-04 | 2019-07-23 | 中国科学院上海技术物理研究所 | A kind of terahertz detector based on antiferromagnetic nonmagnetic metal hetero-junctions |
| CN111739950A (en) * | 2019-03-19 | 2020-10-02 | 国家纳米科学中心 | Terahertz photoelectric detector |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111739950A (en) * | 2019-03-19 | 2020-10-02 | 国家纳米科学中心 | Terahertz photoelectric detector |
| CN110044476A (en) * | 2019-04-04 | 2019-07-23 | 中国科学院上海技术物理研究所 | A kind of terahertz detector based on antiferromagnetic nonmagnetic metal hetero-junctions |
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| CN109405860B (en) | 2020-12-29 |
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