CN102983388B - Terahertz frequency mixing antenna and quasi-optical frequency mixing module - Google Patents
Terahertz frequency mixing antenna and quasi-optical frequency mixing module Download PDFInfo
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- CN102983388B CN102983388B CN201210382894.6A CN201210382894A CN102983388B CN 102983388 B CN102983388 B CN 102983388B CN 201210382894 A CN201210382894 A CN 201210382894A CN 102983388 B CN102983388 B CN 102983388B
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Abstract
The invention provides a terahertz frequency mixing antenna and a quasi-optical frequency mixing module. The terahertz frequency mixing antenna comprises a first schottky diode, a second schottky diode, a planar antenna and a blocking condenser, wherein a negative pole of the first schottky diode is connected with a positive pole of the second schottky diode through the blocking condenser, and a positive pole of the first schottky diode is connected with a negative pole of the second schottky diode directly or through a resistance. The schottky diodes are arranged on radio frequency feed ports of the planar antenna, a radio frequency signal and a local oscillating signal are fed in a space coupling mode through the planar antenna, and an intermediate frequency signal is output after the frequency mixing of the schottky diodes and is output in a guided current mode from the outermost side of the planar antenna. The quasi-optical frequency mixing module comprises the terahertz frequency mixing antenna, a bias and intermediate frequency circuit and a planar transmission line. The terahertz frequency mixing antenna and the quasi-optical frequency mixing module are capable of being operated in a sub-harmonic frequency mixing mode or a fundamental wave frequency mixing mode, and being connected with a standard circuit port easily. Due to the fact that direct current bias is loaded on the frequency mixing antenna, requirements of local oscillating power is reduced.
Description
Technical field
This area relates to THz wave Detection Techniques field, particularly relates to a kind of Terahertz mixing antenna and quasi-optical frequency mixing module.
Background technology
Terahertz is the electromagnetic spectrum that final stage is developed.The special performance of terahertz emission makes THz imaging technology become one of current study hotspot.Terahertz detector is one of critical component of terahertz imaging, and its core is Terahertz antenna and frequency mixer.In order to realize the miniaturization of detector, antenna and frequency mixer can be integrated, i.e. mixing antenna, also referred to as Terahertz mixing antenna.
Terahertz mixing antenna is a kind of device antenna-coupled and frequency translation combined, and has following characteristics: be easy to processing and realize, if desired can by the very high semiconductor technology of machining accuracy and optical technology; Compact conformation, volume are little, quality is light; When producing in a large number, cost is lower than waveguide-based device; Owing to have employed the method that antenna combines with nonlinear device at input radio frequency place, thus avoid transmission line loss; Planar structure, be easy to integrated being easy to and form two-dimensional array, unit consistency is good; Compared to the frequency mixer of open architecture, good stability; Bandwidth, the frequency band of waveguide-based device is mainly limited to the operating frequency of dominant waveguide mode.
Just because of having above advantage, Terahertz mixing antenna is widely used in the fields such as imaging, radio astronomy, communication.Especially in focal plane imaging field, Terahertz mixing antenna is a kind of low cost, small size, be easy to form the scheme of array, and being therefore with a wide range of applications, is that of THz wave sniffer aspect effectively selects.
Because Terahertz is still a still jejune field of technology, especially THz source not easily obtains, and therefore, adopts subharmonic mixing form to be realize terahertz signal to be concerned with the effective way detected.That is, radio frequency signal frequency f
rF, local oscillation signal frequency f
lOand IF signal frequency f
iFmeet following relation:
2nf
lO± f
iF=f
rFn is integer
Owing to loading the biased demand that can reduce local oscillation power to diode.So, usually all direct current biasing port can be set to mixing chip.But because the diode pair in subharmonic mixing antenna is oppositely connected, the while of therefore cannot carrying out diode, feed is biased.
The Terahertz mixing antenna adopting semiconductor technology to realize can have more compact structure, thus can meet the requirement of structuring the formation of multiple-beam system or phased array system.In order to ensure antenna performance, can realize the biased of antiparallel diode pair, rational chip structure seems particularly important.
If directly to Terahertz mixing antenna, especially subharmonic mixing antenna loading direct current biasing and draw direct current signal, the short circuit of intermediate-freuqncy signal or certain diode can be caused, also or the short circuit of DC bias current can be caused, thus make mixing antenna failure.For Terahertz mixing antenna, subharmonic mixing adopts antiparallel diode pair, and fundamental wave mixing adopts single diode; Traditional subharmonic mixing antenna cannot realize fundamental wave mixing, because odd harmonic component is suppressed in diode pair.Also both can not work in subharmonic mixed-mode at present, the relevant report of the mixing antenna of fundamental wave mixing pattern can be operated in again.This greatly constrains the range of application of subharmonic mixing antenna.
Because the radiofrequency signal of Terahertz mixing antenna and local oscillation signal are by antenna-coupled, therefore, need a kind of antenna, can either coupled RF frequency band signals, can be coupled again local oscillator frequency band signals.For fundamental wave mixing, due to radiofrequency signal and local oscillation signal frequency close, therefore, antenna be easy to design realize; But for subharmonic mixing, because local oscillation signal is the half of radiofrequency signal or lower, therefore, antenna generally adopts all channel antenna.Because all channel antenna can radiated radio frequency (RF) frequency range, local oscillator frequency range, and the signal of frequency range between the two, therefore, if the harmonic component produced falls near radio frequency band, near local oscillator frequency range or between the two, then can there is secondary radiation, thus result in the loss of a part of radio-frequency (RF) energy.
Summary of the invention
The present invention proposed in view of the above problems, its objective is and proposes a kind of Terahertz mixing antenna, both can realize subharmonic mixing, and can realize fundamental wave mixing again; Two Schottky diodes of wherein a pair reverse Schottky diode can be made simultaneously to be biased, thus to reduce the demand to local oscillation power.
Another object of the present invention proposes a kind of mixing antenna chip structure, and structure is simple, and can realize the biased of a pair antiparallel Schottky diode, do not affect again the performance of flat plane antenna.
Another object of the present invention proposes a kind of flat plane antenna (i.e. on-chip antenna) structure, can realize the Space Coupling of radiofrequency signal and local oscillation signal, makes each harmonic continue to participate in mixing simultaneously, improve mixing efficiency.
Another object of the present invention proposes a kind of intermediate frequency and biasing circuit, the extraction of the intermediate frequency equilib-ria formula signal to the biased of Terahertz mixing antenna and mixing chip can be realized, equalize instructing signal is transformed into unbalanced signal, and amplifies, facilitate the connection with subsequent conditioning circuit; In addition, control the mode of operation of Terahertz mixing antenna, can switch in subharmonic mixed-mode and fundamental wave mixing pattern.
According to a first aspect of the invention, provide a kind of Terahertz mixing antenna, comprise flat plane antenna, a pair Schottky diode), the first capacitance; Described a pair Schottky diode comprises the first Schottky diode and the second Schottky diode, first Schottky diode and the second Schottky diode be two independently, diode that performance is identical, the negative electrode of the first Schottky diode is connected by the first capacitance with the anode of the second Schottky diode, and the anode of the first Schottky diode is directly connected with the negative electrode of the second Schottky diode or is connected by resistance; Described a pair Schottky diode is positioned at the radio-frequency feed port of flat plane antenna; Radiofrequency signal and local oscillation signal are spacing wave, radiofrequency signal by flat plane antenna by Space Coupling feed-in, local oscillation signal by flat plane antenna by Space Coupling feed-in, by flat plane antenna the radiofrequency signal of the feed-in that is coupled and local oscillation signal after a pair Schottky diode mixing, export intermediate-freuqncy signal, intermediate-freuqncy signal is exported with leading current forms by flat plane antenna outermost.
When applying direct current biasing to the first Schottky diode and the second Schottky diode simultaneously, described mixing Antenna Operation is in subharmonic mixed-mode, radio frequency signal frequency is the even-multiple of local oscillation signal frequency, and described mixing antenna only can export even harmonics component; When give one of the first Schottky diode and the second Schottky diode apply direct current biasing time described mixing Antenna Operation in fundamental wave mixing pattern, radio frequency signal frequency and local oscillation signal frequency basically identical.
Described flat plane antenna is at least functioning in two frequency ranges, and these two frequency ranges have octave relation; Or these two frequency ranges have broadband character, and bandwidth can cover several octave.Flat plane antenna adopts broad-band antenna, and broad-band antenna is butterfly antenna, logarithm periodic antenna or helical antenna.The signal spectrum component that described mixing antenna exports is: | mf
rF± nf
lO|, wherein m ± n is odd number, f
rF, f
lOand f
iFmeet 2nf
lO± f
iF=f
rF, n is integer, f
iFiF signal frequency, f
lOlocal oscillation signal frequency, f
rFit is radio frequency signal frequency.
Described mixing antenna adopts semiconductor technology to make, and the chip of described mixing antenna is with Semi-insulating GaAs layer for substrate, and Semi-insulating GaAs layer is formed heavy doping n+ p type gallium arensidep layer, and heavy doping n+ p type gallium arensidep layer forms lightly doped n-type gallium arsenide layer; Silicon dioxide layer is formed on lightly doped n-type gallium arsenide layer, and the concentration of heavy doping n+GaAs layer 42 is 10
18cm
-3magnitude, the concentration of light dope n-GaAs layer is 10
16-10
17cm
-3magnitude; Institute's doping is silicon; Described a pair Schottky diode is a pair spaced parallel and reverse Schottky diode, the upper plane of the first Schottky diode and the upper plane of the second Schottky diode are at same plane, and the lower plane of the first Schottky diode and the lower plane of the second Schottky diode are at same plane.
First Schottky diode comprises the first Schottky contacts anode, the first ohmic contact negative electrode, the first electroplate lead wire, the first Schottky anode extension pressure point, aperture is had at silicon dioxide layer, first Schottky contacts anode is arranged in aperture, and the first Schottky contacts anode contacts with lightly doped n-type gallium arsenide layer and forms schottky junction; First ohmic contact negative electrode is formed on heavy doping n+ p type gallium arensidep layer; First electroplate lead wire is formed on silicon dioxide layer and the first Schottky contacts anode; First Schottky anode extends pressure point and is formed on silicon dioxide layer; First Schottky contacts anode is extended pressure point and is connected with the first Schottky contacts anode by the first electroplate lead wire.
Second Schottky diode comprises the second Schottky contacts anode, the second ohmic contact negative electrode, the second electroplate lead wire, the second Schottky anode extension pressure point, aperture is had at silicon dioxide layer, second Schottky contacts anode is arranged in aperture, and the second Schottky contacts anode contacts with lightly doped n-type gallium arsenide layer and forms schottky junction; Second ohmic contact negative electrode is formed on heavy doping n+ p type gallium arensidep layer; Second electroplate lead wire is formed on silicon dioxide layer and the second Schottky contacts anode; Second Schottky anode extends pressure point and is formed on silicon dioxide layer and metal; Second Schottky contacts anode is extended pressure point and is connected with the second Schottky contacts anode by the second electroplate lead wire.
The anode of the first Schottky diode extends the top electrode of pressure point as the first capacitance, the ohmic contact negative electrode of the second Schottky diode is as the bottom electrode of the first capacitance, extend the dielectric of the silicon dioxide layer between pressure point and the second ohmic contact negative electrode as the first capacitance at the anode of the first Schottky diode, thus the first capacitance realized between the first Schottky contacts anode of the first Schottky diode and the second ohmic contact negative electrode of the second Schottky diode is connected.
Second Schottky anode of the second Schottky diode is extended pressure point and is connected with the first ohmic contact negative electrode of the first Schottky diode by metal, thus realizes the first ohmic contact negative electrode of the first Schottky diode and the second Schottky contacts anode of the second Schottky diode.
The figure of flat plane antenna is formed by the metal of high conductivity, flat plane antenna comprises the two poles of the earth figure, second antenna metal of the first antenna metal of one pole of flat plane antenna and another pole of flat plane antenna is all positioned on Semi-insulating GaAs layer, and the first antenna metal is directly connected with the second ohmic contact negative electrode of the second Schottky diode; Second antenna metal is directly connected with the first ohmic contact negative electrode of the first Schottky diode.
Between two Schottky contacts anodes, there is corrosion raceway groove, realize two schottky junction electric current isolation; The degree of depth of described raceway groove is not less than the thickness sum of n+ p type gallium arensidep, n-type GaAs and silicon dioxide.
Channel shape is inverted cone shape, the lower surface of raceway groove contacts with Semi-insulating GaAs layer, the upper surface of raceway groove contacts with described electroplate lead wire, the side of raceway groove becomes predetermined angle to extend to upper surface from the lower surface of raceway groove relative to Semi-insulating GaAs layer, the upper surface of raceway groove is greater than the lower surface of raceway groove, and raceway groove to extend between pressure point and described Schottky contacts anode at described Schottky contacts anode in the part of silicon dioxide layer and do not extend pressure point and described Schottky contacts positive contact with described Schottky contacts anode.
The very direct current biasing feedback point that powers on of the first capacitance; The bottom electrode of the first capacitance is that intermediate-freuqncy signal feeds out a little.
Flat plane antenna has balance type structure, and the two poles of the earth figure of flat plane antenna take center as specular; Flat plane antenna is outwards divided into three parts from center, be followed successively by: radio frequency Net long wave radiation district, local oscillator Net long wave radiation district, intermediate frequency draw-out area; The polarization in radio frequency Net long wave radiation district can be circular polarization or linear polarization; The polarization in local oscillator Net long wave radiation district is linear polarization, and the length of intermediate frequency draw-out area is much smaller than the wavelength of intermediate-freuqncy signal; Intermediate frequency draw-out area also comprises pressure welding point.
The figure of flat plane antenna is formed by the metal of high conductivity, is produced on semi-insulating GaAs substrate by semiconductor technology, and the thickness forming the metal of flat plane antenna figure is not less than the skin depth of local oscillation signal frequency.
Selectively, the radio frequency Net long wave radiation district of described mixing antenna is helical antenna or butterfly antenna, and intermediate frequency draw-out area is only made up of pressure welding point, and pressure welding point is of a size of the square of 200um × 200um.
Selectively, described mixing antenna is the subharmonic mixing antenna of 220GHz; Radio frequency Net long wave radiation district adopts the logarithm periodic antenna form of linear polarization, and working frequency range is 200-240GHz, and the dimensional parameters of the logarithm periodic antenna of linear polarization is: external diameter=130um, the number of teeth=3, boss ratio=1.8; Local oscillator Net long wave radiation district adopts dipole antenna form, and operating frequency is 109GHz, and the dimensional parameters of dipole antenna is: path length=260um, subtended angle=90 °; Intermediate frequency draw-out area is only made up of pressure welding point, and pressure welding point is of a size of the square of 200um × 200um.
According to a second aspect of the invention, provide a kind of quasi-optical mixed frequency module, comprise biased and intermediate-frequency circuit, planar transmission line and mixing antenna noted earlier; Biased and intermediate-frequency circuit comprises the first choke induction, the second choke induction, the second capacitance, the 3rd capacitance, Ba Lun and low noise amplifier; First choke induction provides direct current biasing for described mixing antenna, and one end of the first choke induction is connected with direct voltage Vcc, and the other end of the first choke induction is connected with the second Schottky diode anode of described mixing antenna; One end ground connection of the second choke induction, the other end is connected by the negative electrode of planar transmission line with the first Schottky diode of described mixing antenna, for the direct current biasing of described mixing antenna provides DC loop, the first choke induction and the second choke induction are to direct current signal conducting and control intermediate-freuqncy signal and the signal higher than the frequency of intermediate-freuqncy signal; The middle frequency difference sub-signal that described mixing antenna exports respectively via the second capacitance and the 3rd capacitance balance end to Ba Lun, after the conversion of the balanced-unbalanced of Ba Lun, then output after being amplified by low noise amplifier; Described mixing Antenna Operation is in subharmonic mixed-mode.
Described quasi-optical mixed frequency module can also comprise the 3rd choke induction and single-pole single-throw switch (SPST); One end ground connection of the 3rd choke induction, the other end is connected with one end of single-pole single-throw switch (SPST), single-pole single-throw switch (SPST) is connected by the anode of planar transmission line with the first Schottky diode of described mixing antenna, and described 3rd choke induction is to direct current signal conducting and control intermediate-freuqncy signal and the signal higher than the frequency of intermediate-freuqncy signal; When single-pole single-throw switch (SPST) closes, DC bias current will through the first choke induction, the second Schottky diode, single-pole single-throw switch (SPST), the second choke induction, second Schottky diode work, and the two ends of the first Schottky diode are all DC earthing, thus the first Schottky diode does not work, described mixing Antenna Operation is in fundamental wave mixing pattern; When single-pole single-throw switch (SPST) disconnects, apply direct current biasing to the first Schottky diode and the second Schottky diode, described mixing Antenna Operation is in subharmonic mixed-mode simultaneously.
In addition, described mixing antenna output end is axisymmetric relative to described mixing antenna to two sections of circuit of Ba Lun balance end, ensures the degree of balance of balanced signal.
The present invention has following technological merit and beneficial effect: under the prerequisite of radiance not affecting Terahertz mixing antenna, can load direct current biasing, reduce the demand to local oscillation power to subharmonic mixing chip, and structure is simply easy to realize; Utilize the intermediate frequency equilib-ria formula signal being biased and effectively extracting mixing chip with intermediate frequency network, and the signal on mixing chip is transformed into uneven formula signal, facilitate the connection with preferred circuit interface, and subharmonic mixing Antenna Operation can be controlled in fundamental wave mixing pattern or subharmonic mixed-mode.
Accompanying drawing explanation
It should be noted that the accompanying drawing in the following describes only schematically illustrates some embodiments, do not comprise all possible embodiment.
Accompanying drawing 1 is Terahertz mixing antenna structure signal proposed by the invention and fundamental diagram;
Accompanying drawing 2a is under subharmonic mode of operation, and conversion loss is with the variation diagram of local oscillation power;
Accompanying drawing 2b is under subharmonic mode of operation, and conversion loss is with the variation diagram of bias voltage;
Accompanying drawing 3a is the partial schematic diagram of Terahertz mixing antenna chip structure;
Accompanying drawing 3b is the partial schematic diagram of Terahertz mixing antenna chip structure;
Accompanying drawing 4 is structural representations of quasi-optical mixed frequency module proposed by the invention;
Accompanying drawing 5 is plane antenna structure schematic diagrames proposed by the invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, the technical scheme of exemplary embodiment of the present invention is described below in conjunction with accompanying drawing.Obviously, described embodiment is a part of embodiment of the present invention, instead of whole embodiments.Described embodiment is only for illustrating, instead of limitation of the scope of the invention.Based on embodiments of the invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Although employ in the application word first, second etc. multiple element or component part are described, these elements or component part should by the restrictions of these words.These words only for distinguishing an element or component part and another element or component part, and do not comprise " sequentially ".Therefore, the first element discussed below or component part are called that the second element or component part also do not exceed the spirit and scope of the present invention.
Fig. 1 gives the structural representation of Terahertz mixing antenna embodiment of the present invention.As shown in Figure 1, Terahertz mixing antenna comprises flat plane antenna 104, a pair Schottky diode 105, capacitance 108 and low resistance 109.Described a pair Schottky diode 105 is spaced parallel and reverse a pair Schottky diode 105.Radiofrequency signal 101 and local oscillation signal 102 are spacing wave, can be coupled, be transformed into plane leading current forms from space free forms of radiation by flat plane antenna 104.Be coupled the radiofrequency signal of getting off and local oscillation signal after the mixing of a pair antiparallel Schottky diode 105, export intermediate-freuqncy signal 1031,1032.A pair antiparallel Schottky diode 105 is made up of the first Schottky diode 106 and the second Schottky diode 107.First Schottky diode 106 and the second Schottky diode 107 have identical electrical property; And the negative electrode of the first Schottky diode 106 is connected by a capacitance 108 with the anode of the second Schottky diode 107, the anode of the first Schottky diode 106 is directly connected with the negative electrode of Schottky diode 107 or is connected by a resistance 109.Capacitance 108 is relative to radio frequency signal frequency f
rF, local oscillation signal frequency f
lOand IF signal frequency f
iFpresent low impedance characteristic, almost can pass through radio frequency signal frequency f losslessly
rF, local oscillation signal frequency f
lOand IF signal frequency f
iF; But capacitance 108 has buffer action for direct current signal.Resistance 109 has extremely low resistance value, and magnitude is 10
-3below Ω, almost radio frequency signal, local oscillation signal, intermediate-freuqncy signal and direct current signal do not have loss.The signal spectrum component that described mixing antenna exports is: | mf
rF± nf
lO|, wherein m ± n is odd number.F
rF, f
lOand f
iFmeet 2nf
lO± f
iF=f
rF(n is integer).
Accompanying drawing 2a is under subharmonic mode of operation, and conversion loss is with the variation diagram of local oscillation power, and accompanying drawing 2b is under subharmonic mode of operation, and conversion loss is with the variation diagram of bias voltage.f
RF＝220GHz，f
LO＝109GHz，f
IF＝2GHz。The performance of Schottky diode 106 and Schottky diode 107 is: cascade resistance Rs=4Ohm, and ideal factor n=1.2, junction capacitance Cj0 are 5.8fF, and reverse breakdown voltage is 5V.Fig. 2 (a) is for conversion loss is with the variation diagram of local oscillation power; When local oscillation power is 11.5dBm, optimum conversion loss 9.54dB can be obtained, as shown in m1 in Fig. 2 (a).If local oscillation power is less than 11.5dBm, be especially less than 7dBm, conversion loss will worsen.
In some cases, due to local oscillation power space loss, or application conditions cannot provide enough local oscillation power, and therefore, the conversion loss of Terahertz mixing antenna can be deteriorated.In Terahertz receiver, because available Terahertz low noise amplifier is not also very ripe, therefore, usual mixing device is directly as the first order of receiver.According to cascade system expressions of noise:
System noise depends on noise and the gain of the first order.Therefore as the first order, the noise of Terahertz mixing antenna and conversion loss (inverse of conversion gain) just seem very important.As can be seen from Fig. 2 (a), when local oscillation power is 0dBm, conversion loss can deteriorate to about 72dB, and deterioration degree is 10
6magnitude.In order to reduce conversion loss, direct current biasing can be loaded to diode.When Fig. 2 (b) gives antiparallel diode pair loading forward bias, conversion loss is along with the variation diagram of each diode bias voltage.Can find out, when bias voltage is 1.3V, namely each diode be biased to 0.65V time, can obtain minimum conversion loss, be 13.8dBm, as shown in m2 in Fig. 2 (b), relative to optimum conversion loss 9.54dBm, is only degrading 4.26dB.Therefore, as long as rear class uses low-noise device (this is easy to realize at intermediate-frequency band), would not have much impact to system noise.
Fig. 3 a is the partial schematic diagram of Terahertz mixing antenna chip structure, gives the structural representation that the structure of the first Schottky diode 106 and the first Schottky diode 106 are connected with electrode and the flat plane antenna metal of the second Schottky diode 107.
Fig. 3 b is the partial schematic diagram of the structure of Terahertz mixing antenna chip, and Fig. 3 b gives the structural representation that the structure of the second Schottky diode 107 and the second Schottky diode 107 are connected with electrode and the flat plane antenna metal of the first Schottky diode 106.
Terahertz mixing antenna chip 1 with Semi-insulating GaAs material for substrate.Semi-insulating GaAs material is followed successively by from bottom to top: heavy doping n+GaAs layer 42, light dope n-GaAs layer 43.The concentration of n+GaAs layer 42 is 10
18cm
-3magnitude, the concentration of n-GaAs layer 43 is 10
16-10
17cm
-3magnitude, institute's doping is such as silicon.
Schottky diode 106 and the connected mode of Schottky diode 107 be metallized by the burn into of semiconductor epitaxial material, the method such as oxide deposition realizes.
As shown in Figure 3 a, first Schottky diode 106 comprises the first Schottky contacts anode 51, first ohmic contact negative electrode 52, first electroplate lead wire 53, first Schottky anode and extends pressure point 54, aperture is had at silicon dioxide layer 44, first Schottky contacts anode 51 is arranged in aperture, and the first Schottky contacts anode 51 contacts with lightly doped n-type gallium arsenide layer 43 and forms schottky junction; First ohmic contact negative electrode 52 is formed on heavy doping n+ p type gallium arensidep layer 42; First electroplate lead wire 53 is formed on silicon dioxide layer 44 and the first Schottky contacts anode 51; First Schottky anode extends pressure point 54 and is formed on silicon dioxide layer 44; First Schottky contacts anode is extended pressure point 54 and is connected with the first Schottky contacts anode 51 by the first electroplate lead wire 53.
As shown in Figure 3 b, second Schottky diode 107 comprises the second Schottky contacts anode 61, second ohmic contact negative electrode 62, second electroplate lead wire 63, second Schottky anode and extends pressure point 64, aperture is had at silicon dioxide layer 44, second Schottky contacts anode 61 is arranged in aperture, and the second Schottky contacts anode 61 contacts with lightly doped n-type gallium arsenide layer 43 and forms schottky junction; Second ohmic contact negative electrode 62 is formed on heavy doping n+ p type gallium arensidep layer 42; Second electroplate lead wire 63 is formed on silicon dioxide layer 44 and the second Schottky contacts anode 61; Second Schottky anode extends pressure point 64 and is formed on silicon dioxide layer 44 and metal 73; Second Schottky contacts anode is extended pressure point 64 and is connected with the second Schottky contacts anode 61 by the second electroplate lead wire 63.
As best shown in figures 3 a and 3b, the first Schottky contacts anode metal 51 of the first Schottky diode 106 and the second Schottky contacts anode 61 of the second Schottky diode 107 lay respectively on n-GaAs layer 43; First ohmic contact negative electrode 52 of the first Schottky diode 106 and the second ohmic contact negative electrode 62 of the second Schottky diode 12 lay respectively on n+GaAs layer 42.First Schottky contacts anode metal 51 and the second Schottky contacts anode 61 have silicon dioxide 44 to protect respectively, and silicon dioxide 44 is also as the dielectric of the first capacitance (on sheet electric capacity) 14.Described a pair Schottky diode 106,107 is spaced parallel and reverse a pair Schottky diode 106,107, the upper plane of the first Schottky diode 106 and the upper plane of the second Schottky diode 107 are at same plane, and the lower plane of the first Schottky diode 106 and the lower plane of the second Schottky diode 107 are at same plane.
The anode of the first Schottky diode extends pressure point 54 as the first capacitance 14, the top electrode of 108 (i.e. electric capacity on sheet), the ohmic contact negative electrode 62 of the second Schottky diode is as the first capacitance 14, the bottom electrode of 108, silicon dioxide layer 44 between the anode extension pressure point 54 and the second ohmic contact negative electrode 62 of the first Schottky diode is as the first capacitance 14, the dielectric of 108, thus the first capacitance 14 realized between the first Schottky contacts anode 51 of the first Schottky diode and the second ohmic contact negative electrode 62 of the second Schottky diode, 108 connect.
Second Schottky anode of the second Schottky diode is extended pressure point (64) and is connected with the first ohmic contact negative electrode (52) of the first Schottky diode by metal (73), thus realizes the first ohmic contact negative electrode (52) of the first Schottky diode and the second Schottky contacts anode (61) of the second Schottky diode;
The figure of flat plane antenna is formed by the metal of high conductivity, flat plane antenna 104,13) the first antenna metal 71 of a pole and the second antenna metal 72 of another pole of flat plane antenna 104 be all positioned on Semi-insulating GaAs layer 41, second antenna metal 72 is directly connected with the first ohmic contact negative electrode 52 of the first Schottky diode, and the first antenna metal 71 is directly connected with the second ohmic contact negative electrode 62 of the second Schottky diode; The ohmic contact negative electrode 62 of the first antenna metal 71 and the second Schottky diode as the bottom electrode of the first capacitance 14, the very direct current biasing feedback point that powers on of the first capacitance 14; The bottom electrode of the first capacitance 14 is that intermediate-freuqncy signal feeds out a little.
First capacitance 14 is the vertical stratification of metal-insulator-metal; Do not affect radiance and the impedance behavior of antenna, one end DC-isolation between a pair two Schottky diodes can be realized.
In order to ensure that the first Schottky diode 106 and the second Schottky diode 107 can not short circuits in the same way, corrosion raceway groove 74 is used to realize the isolation in the same way of the first Schottky diode 106 and the second Schottky diode 107.The degree of depth of corrosion raceway groove 74 is not less than the thickness sum of n+GaAs layer 42, n-GaAs layer 43 and silicon dioxide layer.Raceway groove 74 shape is inverted cone shape, the lower surface of raceway groove 74 contacts with Semi-insulating GaAs layer (41), the upper surface of raceway groove (74) and described electroplate lead wire (53, 63) contact, the side of raceway groove (74) from the lower surface of raceway groove (74) relative to Semi-insulating GaAs layer (41)) become predetermined angle to extend to upper surface, the upper surface of raceway groove (74) is greater than the lower surface of raceway groove (74), raceway groove (74) is positioned at described Schottky contacts anode in the part of silicon dioxide layer (44) and extends pressure point (54, 64) with described Schottky contacts anode (51, 61) pressure point (54 is not extended with described Schottky contacts anode between, 64) and described Schottky contacts anode (51, 61) contact.
Fig. 4 is Terahertz mixing antenna proposed by the invention and intermediate frequency and bias circuit construction schematic diagram.Complete quasi-optical mixed frequency module includes subharmonic mixing antenna chip 1, biased and intermediate-frequency circuit 2 and planar transmission line 3.Subharmonic mixing antenna chip 1 includes antiparallel Schottky diode pair, flat plane antenna 13, the first capacitance (i.e. capacitance on sheet) 14.Wherein antiparallel Schottky diode is to by spatially Schottky diode 11 that is parallel, reverse-conducting on electrical property and Schottky diode 12 are formed.Anode and the negative electrode of Schottky diode 12 of Schottky diode 11 are directly connected; The negative electrode of Schottky diode 11 is connected by capacitance on sheet 14 with the anode of Schottky diode 12.Schottky diode 11 has identical electrical property with Schottky diode 12, and on sheet, the capacitance of capacitance 14 is 1.22pF, effectively can form path to the signal of 220GHz, and realize the effect of isolated DC.Flat plane antenna 13 has at least two frequency ranges, and these two frequency ranges at least differ an octave, and the bandwidth of two frequency ranges is even across several octave.
Biased and intermediate-frequency circuit 2 shown in Fig. 4 comprises choke induction 21, capacitance 22, choke induction 23, capacitance 24, choke induction 25, _ Ba Lun 26 and low noise amplifier 27.Choke induction 21 is for providing direct current biasing for Terahertz mixing antenna chip 1; Choke induction 23 provides DC loop, meanwhile, for the DC component in mixed components provides DC earthing for the direct current biasing of mixing antenna 1.Choke induction 21 and choke induction 23 can control the intermediate-freuqncy signal even signal of higher frequency, and representative value is 47nH.DC component in the direct current that capacitance 22 and capacitance 24 are biased for isolated DC and mixed components, can pass through intermediate-freuqncy signal, representative value is 10pF.The intermediate-freuqncy signal of Ba Lun 26 for described mixing antenna chip 1 being exported, be transformed into uneven pattern from balanced mode, operating frequency is consistent with intermediate frequency.Two terminals of balance end are connected with capacitance 24 with capacitance 22 respectively, and the terminal of uneven end is connected with low noise amplifier 27.Finally, intermediate-freuqncy signal amplifies rear output by low noise amplifier 27.
When switch 28 disconnects, DC bias current will arrive ground through Schottky diode 12, Schottky diode 11, choke induction 23 successively, and therefore Schottky diode 12 and Schottky diode 11 are all in bias state; And, because Schottky diode 12 and Schottky diode 11 have identical electrical property, therefore both bias states are identical, mixing antenna 1 works in subharmonic mixed-mode, radio frequency signal frequency is the even-multiple of local oscillation signal frequency, and mixing antenna 1 only can export even harmonics component.
If wish, Subharmonic mixer works in fundamental wave mixing pattern, then closed by switch 28.When switch 28 closes, DC bias current will once through Schottky diode 12, switch 28, inductance 25; And Schottky diode 11 two ends are owing to being all DC earthing, be therefore shorted, only have Schottky diode 12 to work.In fundamental wave mixing pattern, radio frequency signal frequency and local oscillation signal frequency basically identical.Switch 28 is such as single-pole single-throw switch (SPST).
Fig. 5 is flat plane antenna (i.e. on-chip antenna) structural representation proposed by the invention.Its structure is balance type structure, and namely the two poles of the earth figure of flat plane antenna take center as specular.Total is outwards divided into three parts from center, be followed successively by: radio frequency Net long wave radiation district 201, local oscillator Net long wave radiation district 202, intermediate frequency draw-out area 203.Wherein intermediate frequency draw-out area 203 also comprises pressure welding point 204.This antenna at least has two working frequency range, and is octave relation between two working frequency range.By semiconductor technology, on-chip antenna, together with Schottky diode, is produced on gallium arsenide epitaxy material.Antenna metal is produced on semi-insulating GaAs layer.In order to reduce loss, the metal thickness of its antenna pattern is not less than the skin depth of local oscillation signal frequency
the polarization in its radio frequency Net long wave radiation district 201 can be circular polarization (as helical antenna, but being not limited to this form) or linear polarization (as butterfly antenna, logarithm periodic antenna, but being not limited to this form); The polarization in its local oscillator Net long wave radiation district 202 is linear polarization.
Be applied as example with the subharmonic mixing of 220GHz, radio frequency Net long wave radiation district 201 adopts the logarithm periodic antenna form of linear polarization, and working frequency range is 200-240GHz, and the dimensional parameters of logarithm periodic antenna is: external diameter=130um, the number of teeth=3, boss ratio=1.8; Local oscillator Net long wave radiation district 202 adopts typical dipole antenna form, and operating frequency (i.e. centre frequency) is 109GHz, and the dimensional parameters of dipole antenna is: path length=260um, subtended angle=90 °.In order to not affect the centre frequency in the effective district 202 of local oscillator, intermediate frequency draw-out area 203 is only made up of pressure welding point 204.Pressure welding point is of a size of the square of 200um × 200um, does not affect frequency and the radiation characteristic of antenna; In addition, the form adopting spun gold pressure welding or flip chip bonding with intermediate-frequency circuit is convenient in such intermediate frequency draw-out area 203.
Above to the description of embodiments of the invention only for illustration of technical scheme of the present invention; instead of limitation of the scope of the invention; the present invention is not limited to these disclosed embodiments; those skilled in the art can modify to the technical scheme described in foregoing embodiments; or equivalent replacement is carried out to wherein portion of techniques feature, and these amendments or replace and all should fall into protection scope of the present invention.
Claims (15)
1. a Terahertz mixing antenna, comprises flat plane antenna (104,13), a pair Schottky diode, the first capacitance (108,14), described a pair Schottky diode comprises the first Schottky diode (106, 11) and the second Schottky diode (107, 12), first Schottky diode (106, 11) and the second Schottky diode (107, 12) be two independently, the diode that performance is identical, first Schottky diode (106, 11) negative electrode and the second Schottky diode (107, 12) anode is by the first capacitance (108, 14) be connected, first Schottky diode (106, 11) anode and the second Schottky diode (107, 12) negative electrode is directly connected or is connected by resistance (109), described a pair Schottky diode is positioned at the radio-frequency feed port of flat plane antenna (104,13), radiofrequency signal (101) and local oscillation signal (102) are spacing wave, radiofrequency signal (101) is by flat plane antenna (104,13) by Space Coupling feed-in, local oscillation signal (102) is by flat plane antenna (104,13) by Space Coupling feed-in, by flat plane antenna the radiofrequency signal of the feed-in that is coupled and local oscillation signal after a pair Schottky diode mixing, export intermediate-freuqncy signal (1031,1032), intermediate-freuqncy signal is exported with leading current forms by flat plane antenna outermost, when giving the first Schottky diode (106,11) and the second Schottky diode (107,12) when applying direct current biasing simultaneously, described mixing Antenna Operation is in subharmonic mixed-mode, radio frequency signal frequency is the even-multiple of local oscillation signal frequency, and described mixing antenna only can export even harmonics component, when giving one of the first Schottky diode (106,11) and the second Schottky diode (107,12) applying direct current biasing, mixing Antenna Operation is in fundamental wave mixing pattern, radio frequency signal frequency and local oscillation signal frequency basically identical.
2. Terahertz mixing antenna according to claim 1, is characterized in that: flat plane antenna is at least functioning in two frequency ranges, and these two frequency ranges have octave relation; Or these two frequency ranges have broadband character, and bandwidth covers several octave; Flat plane antenna adopts broad-band antenna, and broad-band antenna is butterfly antenna, logarithm periodic antenna or helical antenna.
3. Terahertz mixing antenna according to claim 1, is characterized in that: the signal spectrum component that described mixing antenna exports is: | mf
rF± nf
lO|, wherein m ± n is odd number, f
rF, f
lOand f
iFmeet 2nf
lO± f
iF=f
rF, n is integer, f
iFiF signal frequency, f
lOlocal oscillation signal frequency, f
rFit is radio frequency signal frequency.
4. Terahertz mixing antenna according to claim 1, is characterized in that the magnitude of the resistance value of resistance (109) is 10
-3below Ω.
5. Terahertz mixing antenna according to claim 1, it is characterized in that: mixing antenna adopts semiconductor technology to make, the chip of mixing antenna is for substrate with Semi-insulating GaAs layer (41), at Semi-insulating GaAs layer (41) upper formation heavy doping n+ p type gallium arensidep layer (42), at heavy doping n+ p type gallium arensidep layer (42) upper formation lightly doped n-type gallium arsenide layer (43); Silicon dioxide layer (44) is formed on lightly doped n-type gallium arsenide layer (43), and the concentration of heavy doping n+ p type gallium arensidep layer (42) is 10
18cm
-3magnitude, the concentration of lightly doped n-type gallium arsenide layer (43) is 10
16-10
17cm
-3magnitude; Institute's doping is silicon; Described a pair Schottky diode is a pair spaced parallel and reverse Schottky diode, first Schottky diode (106,11) upper plane and the second Schottky diode (107,12) upper plane is at same plane, first Schottky diode (106,11) lower plane of lower plane and the second Schottky diode (107,12) is at same plane;
First Schottky diode (106,11) the first Schottky contacts anode (51), the first ohmic contact negative electrode (52), the first electroplate lead wire (53), the first Schottky anode extension pressure point (54) is comprised, aperture is had at silicon dioxide layer (44), first Schottky contacts anode (51) is arranged in aperture, and the first Schottky contacts anode (51) contacts with lightly doped n-type gallium arsenide layer (43) and forms schottky junction; First ohmic contact negative electrode (52) is formed on heavy doping n+ p type gallium arensidep layer (42); First electroplate lead wire (53) is formed on silicon dioxide layer (44) and the first Schottky contacts anode (51); First Schottky anode extends pressure point (54) and is formed on silicon dioxide layer (44); First Schottky contacts anode is extended pressure point (54) and is connected with the first Schottky contacts anode (51) by the first electroplate lead wire (53);
Second Schottky diode (107,12) the second Schottky contacts anode (61), the second ohmic contact negative electrode (62), the second electroplate lead wire (63), the second Schottky anode extension pressure point (64) is comprised, aperture is had at silicon dioxide layer (44), second Schottky contacts anode (61) is arranged in aperture, and the second Schottky contacts anode (61) contacts with lightly doped n-type gallium arsenide layer (43) and forms schottky junction; Second ohmic contact negative electrode (62) is formed on heavy doping n+ p type gallium arensidep layer (42); Second electroplate lead wire (63) is formed on silicon dioxide layer (44) and the second Schottky contacts anode (61); Second Schottky anode extends pressure point (64) and is formed on silicon dioxide layer (44) and metal (73); Second Schottky contacts anode is extended pressure point (64) and is connected with the second Schottky contacts anode (61) by the second electroplate lead wire (63);
The anode of the first Schottky diode extends pressure point (54) as the first capacitance (108, 14) top electrode, the ohmic contact negative electrode (62) of the second Schottky diode is as the first capacitance (108, 14) bottom electrode, be positioned at the first Schottky diode anode extend pressure point (54) and the second ohmic contact negative electrode (62) between silicon dioxide layer (44) as the first capacitance (108, 14) dielectric, thus the first capacitance (108 realized between the first Schottky contacts anode (51) of the first Schottky diode and the second ohmic contact negative electrode (62) of the second Schottky diode, 14) connect,
Second Schottky anode of the second Schottky diode is extended pressure point (64) and is connected with the first ohmic contact negative electrode (52) of the first Schottky diode by metal (73), thus the second Schottky contacts anode (61) of the first ohmic contact negative electrode (52) and the second Schottky diode that realize the first Schottky diode is connected;
The figure of flat plane antenna is formed by the metal of high conductivity, flat plane antenna (104,13) first antenna metal (71) of a pole and flat plane antenna (104,13) second antenna metal (72) of another pole is all positioned on Semi-insulating GaAs layer (41), and the first antenna metal (71) is directly connected with the second ohmic contact negative electrode (62) of the second Schottky diode; Second antenna metal (72) is directly connected with the first ohmic contact negative electrode (52) of the first Schottky diode.
6. Terahertz mixing antenna according to claim 5, is characterized in that: between two Schottky contacts anodes, there is corrosion raceway groove (74), realizes two schottky junction electric current isolation; The degree of depth of described raceway groove (74) is not less than the thickness sum of n+ p type gallium arensidep, n-type GaAs and silicon dioxide.
7. Terahertz mixing antenna according to claim 6, is characterized in that:
Raceway groove (74) shape is inverted cone shape, the lower surface of raceway groove (74) contacts with Semi-insulating GaAs layer (41), the upper surface of raceway groove (74) and described electroplate lead wire (53, 63) contact, the side of raceway groove (74) becomes predetermined angle to extend to upper surface from the lower surface of raceway groove (74) relative to Semi-insulating GaAs layer (41), the upper surface of raceway groove (74) is greater than the lower surface of raceway groove (74), raceway groove (74) is positioned at described Schottky contacts anode in the part of silicon dioxide layer (44) and extends pressure point (54, 64) with described Schottky contacts anode (51, 61) pressure point (54 is not extended with described Schottky contacts anode between, 64) and described Schottky contacts anode (51, 61) contact.
8. Terahertz mixing antenna according to claim 5, is characterized in that: the very direct current biasing feedback point that powers on of the first capacitance (108,14); The bottom electrode of the first capacitance (108,14) is that intermediate-freuqncy signal feeds out a little.
9. the Terahertz mixing antenna according to claim arbitrary in claim 1-8, is characterized in that, flat plane antenna (104,13) has balance type structure, and the two poles of the earth figure of flat plane antenna take center as specular; Flat plane antenna is outwards divided into three parts from center, be followed successively by: radio frequency Net long wave radiation district (201), local oscillator Net long wave radiation district (202), intermediate frequency draw-out area (203); The polarization in radio frequency Net long wave radiation district (201) is circular polarization or linear polarization; The polarization in local oscillator Net long wave radiation district (202) is linear polarization, and the length of intermediate frequency draw-out area is much smaller than the wavelength of intermediate-freuqncy signal; Intermediate frequency draw-out area (203) also comprises pressure welding point (204);
The figure of flat plane antenna is formed by the metal of high conductivity, is produced on semi-insulating GaAs substrate by semiconductor technology, and the thickness forming the metal of flat plane antenna figure is not less than the skin depth of local oscillation signal frequency.
10. Terahertz mixing antenna according to claim 9, it is characterized in that, radio frequency Net long wave radiation district (201) is helical antenna or butterfly antenna, intermediate frequency draw-out area (203) is only made up of pressure welding point (204), and pressure welding point is of a size of the square of 200um × 200um.
11. Terahertz mixing antennas according to claim 9, is characterized in that, mixing antenna is the subharmonic mixing antenna of 220GHz; Radio frequency Net long wave radiation district (201) adopts the logarithm periodic antenna form of linear polarization, and working frequency range is 200-240GHz, and the dimensional parameters of the logarithm periodic antenna of linear polarization is: external diameter=130um, the number of teeth=3, boss ratio=1.8; Local oscillator Net long wave radiation district (202) adopts dipole antenna form, and operating frequency is 109GHz, and the dimensional parameters of dipole antenna is: path length=260um, subtended angle=90 °; Intermediate frequency draw-out area (203) is only made up of pressure welding point (204), and pressure welding point is of a size of the square of 200um × 200um.
12. 1 kinds of quasi-optical frequency mixing module comprising the Terahertz mixing antenna in claim 1-11 described in arbitrary claim, comprise biased with intermediate-frequency circuit (2), planar transmission line (3); Biased and intermediate-frequency circuit (2) comprises the first choke induction (21), the second choke induction (23), the second capacitance (22), the 3rd capacitance (24), Ba Lun (26) and low noise amplifier (27);
First choke induction (21) provides direct current biasing for described mixing antenna, one end of first choke induction (21) is connected with direct voltage (Vcc), and the other end of the first choke induction (21) is connected with the second Schottky diode anode of described mixing antenna;
One end ground connection of the second choke induction (23), the other end is connected with the negative electrode of the first Schottky diode of described mixing antenna by planar transmission line (3), for the direct current biasing of mixing antenna provides DC loop, the first choke induction (21) and the second choke induction (23) are to direct current signal conducting and control intermediate-freuqncy signal and the signal higher than the frequency of intermediate-freuqncy signal;
The middle frequency difference sub-signal that described mixing antenna exports is respectively via the second capacitance (22) and the 3rd capacitance (24) balance end to Ba Lun (26), after the conversion of the balanced-unbalanced of Ba Lun, then export after being amplified by low noise amplifier; Described mixing Antenna Operation is in subharmonic mixed-mode.
13. quasi-optical frequency mixing module according to claim 12, is characterized in that, described quasi-optical frequency mixing module also comprises the 3rd choke induction (25) and single-pole single-throw switch (SPST) (28);
One end ground connection of the 3rd choke induction (25), the other end is connected with the one end of single-pole single-throw switch (SPST) (28), single-pole single-throw switch (SPST) (28) is by first Schottky diode (106 of planar transmission line (3) with described mixing antenna, 11) anode is connected, and described 3rd choke induction (25) is to direct current signal conducting and control intermediate-freuqncy signal and the signal higher than the frequency of intermediate-freuqncy signal;
When single-pole single-throw switch (SPST) (28) is closed, DC bias current will through the first choke induction (21), the second Schottky diode (107,12), single-pole single-throw switch (SPST) (28), the second choke induction (25), second Schottky diode (107,12) work, and the first Schottky diode (106,11) two ends are all DC earthing, thus the first Schottky diode (106,11) do not work, described mixing Antenna Operation is in fundamental wave mixing pattern;
When single-pole single-throw switch (SPST) (28) disconnects, apply direct current biasing to the first Schottky diode (106,11) and the second Schottky diode (107,12), mixing Antenna Operation is in subharmonic mixed-mode simultaneously.
14. quasi-optical frequency mixing module according to claim 12 or 13, is characterized in that: mixing antenna output end is axisymmetric relative to mixing antenna to two sections of circuit of Ba Lun balance end, ensure the degree of balance of balanced signal.
15. quasi-optical frequency mixing module according to claim 14, is characterized in that: the capacitance of the first capacitance (108,14) is 1.22pF; The capacitance of the second capacitance (22) and the 3rd capacitance (24) is 10pF; The inductance value of the first choke induction (21) and the second choke induction (23) is 47nH.
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| CN104795453B (en) * | 2015-04-24 | 2018-06-12 | 中国电子科技集团公司第十三研究所 | A kind of more beam lead GaAs base schottky frequency doubled diodes |
| CN104835859B (en) * | 2015-05-20 | 2018-01-30 | 中国电子科技集团公司第十三研究所 | Class mixing GaAs base Terahertz Schottky diodes can be biased |
| CN105449377A (en) * | 2015-12-16 | 2016-03-30 | 天津大学 | Huge terahertz antenna array based on semiconductor process |
| CN109149322B (en) * | 2017-06-27 | 2020-07-07 | 中国科学院半导体研究所 | THz antenna and manufacturing method thereof |
| CN111129681B (en) | 2018-10-31 | 2021-05-07 | 华为技术有限公司 | Balance-unbalance conversion device, communication device and communication system |
| CN109768382A (en) * | 2018-12-28 | 2019-05-17 | 北京航空航天大学 | Array terahertz emission source and its manufacturing method |
| CN109855728B (en) * | 2019-01-23 | 2021-04-23 | 嘉兴腓特烈太赫科技有限公司 | Full-period detector |
| CN109813958A (en) * | 2019-01-23 | 2019-05-28 | 嘉兴腓特烈太赫科技有限公司 | Reverse parallel connection structure zero offset detection tube |
| CN109725204A (en) * | 2019-02-21 | 2019-05-07 | 北京星英联微波科技有限责任公司 | Complete period wave detector based on mixing Schottky diode |
| CN112289866B (en) * | 2020-10-12 | 2023-03-28 | 中国电子科技集团公司第十三研究所 | High-power broadband terahertz frequency multiplication Schottky diode structure |
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