CN102904528B - Terahertz quasi-optical frequency multiplier - Google Patents
Terahertz quasi-optical frequency multiplier Download PDFInfo
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- CN102904528B CN102904528B CN201210382948.9A CN201210382948A CN102904528B CN 102904528 B CN102904528 B CN 102904528B CN 201210382948 A CN201210382948 A CN 201210382948A CN 102904528 B CN102904528 B CN 102904528B
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Abstract
The invention provides a kind of Terahertz quasi-optical frequency multiplier, comprise the first capacitance, filter, frequency multiplication antenna and quasi-optical device; Described frequency multiplication antenna comprises antenna and nonlinear device; Input signal is loaded on frequency multiplication antenna after the first capacitance, filter, and input signal is by filter, and the filtered device of each harmonic component of input signal suppresses; The nonlinear device of frequency multiplication antenna produces harmonic component to the input signal be loaded on frequency multiplication antenna; Required output signal radiate by the antenna of frequency multiplication antenna; Quasi-optical device makes output signal have better directivity.Terahertz quasi-optical frequency multiplier volume of the present invention is little, lightweight, be easy to implementation space power combing, can realize efficient odd frequency multiplier.
Description
Technical field
The present invention relates to THz wave source technology field, particularly relate to Terahertz quasi-optical frequency multiplier.
Background technology
Terahertz is the electromagnetic spectrum that final stage is developed.The special performance of terahertz emission makes THz imaging technology become one of current study hotspot.THz source is one of critical component of Terahertz system always.Terahertz signal can be produced by vacuum electron device, also can produce local oscillation signal by low frequency source in conjunction with the mode of frequency multiplier.Low frequency source is a kind of more common mode in conjunction with the terahertz signal producing method of frequency multiplication.This mode, compared to vacuum electron device source, has the advantages such as volume is little, lightweight; Phase-locked, the modulation etc. of terahertz signal can be realized by phase-locked, the modulation of low frequency source etc. simultaneously.
Usually, the Terahertz frequency multiplier of employing is the frequency multiplier of waveguide-based.Because Terahertz band wavelength is little, the mechanical features sizes such as Gu Bodaokou are little, are not easy to processing; In addition, be not easy to adopt space power synthesis technology to improve terahertz signal power.
According to single tube structure, the frequency multiplication of arbitrary number of times can be realized, but this frequency multiplication topological structure efficiency is lower, is not suitable for odd frequency multiplier.
In addition, in traditional odd frequency multiplier, nonlinear device adopts antiparallel to form of tubes.But this structure can not load biased to nonlinear device, thus can lose a part of conversion efficiency simultaneously.
Summary of the invention
The present invention proposed in view of the above problems, and its objective is and propose a kind of quasi-optical frequency multiplier, volume is little, lightweight, is easy to form space power synthesis array;
Another object of the present invention proposes a kind of quasi-optical odd frequency multiplier, can realize odd double frequency function.
Another object of the present invention proposes one can be biased quasi-optical odd frequency multiplier, is biased, has higher shg efficiency while can realizing nonlinear device.
According to a first aspect of the present invention, provide a kind of Terahertz quasi-optical frequency multiplier, comprise the first capacitance, filter, frequency multiplication antenna and quasi-optical device; Described frequency multiplication antenna comprises antenna and nonlinear device; Input signal is loaded on frequency multiplication antenna after the first capacitance, filter, and input signal is by filter, and the filtered device of each harmonic component of input signal suppresses; The nonlinear device of frequency multiplication antenna produces harmonic component to the input signal be loaded on frequency multiplication antenna; Required output signal radiate by the antenna of frequency multiplication antenna; Quasi-optical device makes output signal have better directivity.
Described Terahertz quasi-optical frequency multiplier also comprises choke induction; Direct current signal is carried on frequency multiplication antenna through choke induction, and choke induction suppresses input signal and each harmonic component thereof.
The nonlinear device of frequency multiplication antenna is Terahertz Schottky diode; Described antenna is flat plane antenna, and the centre frequency of flat plane antenna is output signal frequency.Frequency multiplication antenna adopts semiconductor technology to make, and the flat plane antenna of frequency multiplication antenna and described Schottky diode use same Semi-insulating GaAs material to be substrate.
Described filter is low pass filter, and the cut-off frequency of low pass filter is between the second harmonic frequency of frequency input signal and input signal; Or described filter is band pass filter, the centre frequency of band pass filter equals the frequency of input signal, and rejection band contains the frequencies of harmonic components of input signal.
The first described capacitance to input signal and the loss of each harmonic component very little, first capacitance block direct current signal direct current signal is carried on frequency multiplication antenna.
Described quasi-optical device is high resistance medium lens, and frequency multiplication antenna is positioned at the focal position of lens; Or described quasi-optical device is the semi-open metallic cavity of trumpet type, and frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, the bottom surface of loudspeaker is metal.
The dielectric material of described high resistance medium lens is High Resistivity Si, and the plane of high resistance medium lens is close to by frequency multiplication antenna.
The invention provides quasi-optical No. four frequency multipliers of a kind of 200GHz, 50GHz input signal, by the feed-in of K head, enters frequency multiplication antenna after the first capacitance, filter; First capacitance is patch capacitor, capacitance 47uF; Filter is height impedance type Microstrip Low-Pass, and cut-off frequency is 60GHz, and the degree of suppression near 110GHz, 220GHz is greater than 25dB; Frequency multiplication antenna is the monolithic frequency multiplication antenna chip of GaAs base, and the antenna of frequency multiplication antenna adopts logarithm period form, and working frequency range is 180-220GHz; One end of frequency multiplication antenna is connected to the ground; Direct current signal is carried on frequency multiplication antenna through choke induction, and choke induction suppresses input signal and each harmonic component thereof; Choke induction is chip inductor, and its inductance value is 10uH; High Resistivity Si extended hemispherical lens is close to the frequency multiplication antenna back side, and frequency multiplication antenna is positioned at the focal position of lens.
According to a second aspect of the present invention, provide the quasi-optical odd frequency multiplier of Terahertz, comprise the first capacitance, filter, frequency multiplication antenna and quasi-optical device; Described frequency multiplication antenna comprises antenna and nonlinear device, described nonlinear device has symmetrical I-E characteristic and capacitance-voltage characteristics, nonlinear device is a pair Terahertz Schottky diode, described a pair Terahertz Schottky diode comprises the first Schottky diode and the second Schottky diode, the negative electrode of the first Schottky diode is connected with the second Schottky diode anode, and the anode of the first Schottky diode is connected with the negative electrode of the second Schottky diode; Input signal is loaded on frequency multiplication antenna after the first capacitance, filter, and input signal is by filter, and the filtered device of each harmonic component of input signal suppresses; The nonlinear device of frequency multiplication antenna produces odd harmonic component to the input signal be loaded on frequency multiplication antenna; Required output signal radiate by the antenna of frequency multiplication antenna; Quasi-optical device makes output signal have better directivity.
The invention provides the quasi-optical triductor of a kind of 270GHz, 90GHz input signal, by waveguide-fin-line transition structure feed-in, enters frequency multiplication antenna through the first capacitance, filter; First capacitance is patch capacitor, capacitance 47uF; Filter is height impedance type Microstrip Low-Pass, and cut-off frequency is 100GHz, and the degree of suppression near 180GHz, 270GHz is greater than 25dB; The antenna of frequency multiplication antenna adopts butterfly antenna form, and working frequency range is 260-280GHz; One end of frequency multiplication antenna is connected to the ground; Antenna, filter, transmission line are all produced on quartz substrate; Frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, and the bottom surface of loudspeaker is metal, and the short circuit identity distance of antenna distance loudspeaker cavity is from being 1/4th of the corresponding space wavelength of 270GHz.
The invention provides that a kind of Terahertz is quasi-optical is biased odd frequency multiplier, comprise the first capacitance, filter, frequency multiplication antenna, quasi-optical device, the second capacitance, choke induction, described frequency multiplication antenna comprises antenna, nonlinear device, electric capacity; Described nonlinear device comprises the first Schottky diode and the second Schottky diode, the negative electrode of described first Schottky diode is connected with the anode of the second Schottky diode, and the negative electrode of the second Schottky diode is connected by the anode of electric capacity with the first Schottky diode; Input signal is loaded on frequency multiplication antenna after the first capacitance, filter, and the filtered device of each harmonic component of input signal suppresses, and nonlinear device produces odd harmonic component to the input signal be loaded on frequency multiplication antenna; Required output signal radiate by the antenna of frequency multiplication antenna; Quasi-optical device makes output signal have better directivity; Direct current signal, by the feed-in of DC feedback end, is loaded on the anode of the first Schottky diode through choke induction, the minus earth of the second Schottky diode forms DC loop; One end of described frequency multiplication antenna is connected with filter, and the other end by capacity earth, thus realizes radiofrequency signal loop.
The invention provides that a kind of 270GHz is quasi-optical is biased triductor, comprise the first capacitance, filter, frequency multiplication antenna, quasi-optical device, the second capacitance, choke induction, described frequency multiplication antenna comprises antenna, nonlinear device, electric capacity; Described nonlinear device comprises the first Schottky diode and the second Schottky diode, the negative electrode of described first Schottky diode is connected with the anode of the second Schottky diode, and the negative electrode of the second Schottky diode is connected by the anode of electric capacity with the first Schottky diode; 90GHz signal, by waveguide-fin-line transition structure feed-in, enters frequency multiplication antenna through the first capacitance, filter; First capacitance is patch capacitor, capacitance 47uF, and the filtered device of each harmonic component of input signal suppresses, and filter is height impedance type Microstrip Low-Pass, and cut-off frequency is 100GHz, and the degree of suppression near 180GHz, 270GHz is greater than 25dB; Nonlinear device produces odd harmonic component to the input signal be loaded on frequency multiplication antenna; Required output signal radiate by the antenna of frequency multiplication antenna, and the antenna of frequency multiplication antenna adopts butterfly antenna form, and working frequency range is 260-280GHz; Quasi-optical device is the semi-open metallic cavity of trumpet type, the bottom surface of loudspeaker is metal, frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, and the short circuit identity distance of the semi-open metallic cavity of antenna distance trumpet type is from being 1/4th of the corresponding space wavelength of 270GHz; Direct current signal, by the feed-in of DC feedback end, is loaded on the anode of the first Schottky diode through choke induction, the minus earth of the second Schottky diode forms DC loop; One end of described frequency multiplication antenna is connected with filter, and the other end by capacity earth, thus realizes radiofrequency signal loop; Described antenna, filter, transmission line are all produced on quartz substrate.
Beneficial effect of the present invention: according to the present invention, can realize little, the lightweight frequency multiplier of volume, be easy to implementation space power combing simultaneously, especially can by controlling the phase place of low frequency source, the coherent superposition of implementation space signal.According to the present invention, efficient odd frequency multiplier can be realized.
Accompanying drawing explanation
It should be noted that the accompanying drawing in the following describes only schematically illustrates some embodiments, do not comprise all possible embodiment.
Accompanying drawing 1 is a kind of Terahertz quasi-optical frequency multiplier schematic diagram provided by the present invention;
Accompanying drawing 2a and Fig. 2 b is a kind of way of realization of quasi-optical device of the present invention;
Accompanying drawing 3a and Fig. 3 b is the another kind of way of realization of quasi-optical device of the present invention;
Accompanying drawing 4 is structural representations of quasi-optical No. four frequency multipliers of 200GHz;
Accompanying drawing 5 is quasi-optical No. four the frequency multiplier output spectrums of 200GHz;
Accompanying drawing 6 is a kind of Terahertz provided by the present invention quasi-optical odd frequency multiplier schematic diagrams;
Accompanying drawing 7 is the quasi-optical triductor structural representations of 270GHz;
Accompanying drawing 8 is the quasi-optical triductor output spectrums of 270GHz;
Accompanying drawing 9 is a kind of Terahertz provided by the present invention quasi-optical odd frequency multiplier schematic diagrams;
Accompanying drawing 10 is Terahertz quasi-optical odd frequency multiplication Principle of Antenna figure;
Accompanying drawing 11 is the quasi-optical triductor structural representations of 270GHz;
Accompanying drawing 12 is quasi-optical triductor output spectrums of 270GHz (under-5V bias condition);
Figure 13 is the structural representation of Terahertz Schottky diode according to an embodiment of the invention.
Embodiment
The technical scheme of exemplary embodiment of the present invention is described below in conjunction with accompanying drawing.Obviously, described embodiment is a part of embodiment of the present invention, instead of whole embodiments.Described embodiment is only for illustrating, instead of the restriction to the utility model scope.Based on embodiments of the invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Although employ in the application word first, second etc. multiple element or component part are described, these elements or component part should by the restrictions of these words.These words only for distinguishing an element or component part and another element or component part, and do not comprise " sequentially ".Therefore, the first element discussed below or component part are called that the second element or component part also do not exceed the spirit and scope of the present invention.
Fig. 1 is the schematic diagram of a kind of Terahertz quasi-optical frequency multiplier provided by the present invention.As shown in Figure 1, Terahertz quasi-optical frequency multiplier comprises: capacitance 11, filter 12, frequency multiplication antenna 13, choke induction 14 and quasi-optical device 15.Wherein, described frequency multiplication antenna is made up of antenna 131 and nonlinear device 132.Input signal, by port one 6 feed-in, after capacitance 11, filter 12, is loaded on frequency multiplication antenna 13; The input signal be loaded on frequency multiplication antenna 13 produces harmonic component by the nonlinear device 132 on frequency multiplication antenna 13; Required output signal radiate by the antenna 131 on frequency multiplication antenna 13.Quasi-optical device 15 improves the radiance of antenna further, makes output signal have better directivity.Nonlinear device 132 in described frequency multiplication antenna 13 is such as Schottky diode, and Schottky diode is Terahertz Schottky diode; Antenna 131 is such as flat plane antenna.The centre frequency of described flat plane antenna is output signal frequency.Described filter 12 can pass through input signal, suppresses each harmonic component of input signal.Described filter 12 can be such as low pass filter, and its cut-off frequency is between the second harmonic frequency of frequency input signal and input signal; Described filter 12 can be also band pass filter, and its centre frequency equals frequency input signal, and rejection band contains the frequencies of harmonic components of input signal.Described capacitance 11 pairs of input signals and the loss of each harmonic component very little; Described choke induction 14 can suppress input signal and each harmonic component thereof.Direct current signal is by port one 7 feed-in; Due to the blocking effect of capacitance 11, direct current signal can be carried on frequency multiplication antenna 13 effectively.Described quasi-optical device 15 can be high resistance medium lens; Described high resistance medium lens, its dielectric material is High Resistivity Si.Frequency multiplication antenna 13 is positioned at the focal position of lens.
Fig. 2 a and Fig. 2 b gives the first embodiment of quasi-optical device of the present invention.Fig. 2 b is the structural representation of the first embodiment of quasi-optical device of the present invention, and Fig. 2 a is the sectional view of the first embodiment of quasi-optical device of the present invention.As shown in Figure 2 a and 2 b, the quasi-optical device of this embodiment is lens 52.The plane of lens 52 is close to by frequency multiplication antenna 51, and lens 52 adopt extended hemispherical lens.Certainly, lens 52 also can adopt ellipsoid lens, packaged lens etc.
Fig. 3 a and 3b gives the second embodiment of quasi-optical device in the present invention.Fig. 3 a is the structural representation of this quasi-optical device embodiments, and Fig. 3 a is the sectional view of the embodiment of this quasi-optical device.Described quasi-optical device is the semi-open metallic cavity 52 of trumpet type.Frequency multiplication antenna 51 is positioned at semi-open metallic cavity 52.Semi-open metallic cavity 52 is tubaeform cavitys; The bottom surface of loudspeaker is metal, can reflected signal effectively.
Fig. 4 is a kind of implementation structured flowchart of quasi-optical No. four frequency multipliers of 200GHz.50GHz signal, by K 101 feed-ins, enters frequency multiplication antenna 104 through capacitance 102, filter 103.Capacitance 102 is patch capacitor, capacitance 47uF; Filter 103 is height impedance type Microstrip Low-Pass, and cut-off frequency is 60GHz, and the degree of suppression near 110GHz, 220GHz is greater than 25dB.Frequency multiplication antenna 104 is the monolithic frequency multiplication antenna chip of GaAs base, and antenna adopts logarithm period form, and working frequency range is 180-220GHz; Nonlinear device is Schottky diode.One end of frequency multiplication antenna is connected with ground 106.Direct current signal is through choke induction 105 feed-in.Choke induction 105 is chip inductor, and its inductance value is 10uH.The dielectric substrate 107 of microstrip line is quartz.High Resistivity Si extended hemispherical lens 108 is close to the frequency multiplication antenna back side.
Fig. 5 is the output spectrum of quasi-optical No. four frequency multipliers of 200GHz.Frequency input signal is 50GHz, and power is 20dBm; Direct current biasing is-1V; Output signal frequency is 200GHz, and power is 1.649dBm.
Fig. 6 is a kind of Terahertz provided by the present invention quasi-optical odd frequency multiplier schematic diagram.This Terahertz quasi-optical odd frequency multiplier comprises: capacitance 21, filter 22, frequency multiplication antenna 23 and quasi-optical device 24.Wherein, described frequency multiplication antenna 23 is made up of antenna 31 and nonlinear device 232,233; Described nonlinear device has symmetrical I-V characteristic (I-E characteristic) and C-V characteristic (capacitance-voltage characteristics).Input signal, by port 25 feed-in, after capacitance 21, filter 22, is loaded on frequency multiplication antenna 23; The input signal be loaded on frequency multiplication antenna 23 produces odd harmonic component by the nonlinear device 232,233 on frequency multiplication antenna 23; The harmonic component signal of required output radiate by the antenna 231 on frequency multiplication antenna 23.Quasi-optical device 24 improves the radiance of antenna further, makes output signal have better directivity.The nonlinear device 232 and 233 of described frequency multiplication antenna 23 is Schottky diode pair.Described Schottky diode forms by the first Schottky diode 232 and the second Schottky diode 233; The negative electrode of the first Schottky diode 232 is connected with the second Schottky diode 233 anode; The anode of the first Schottky diode 232 is connected with the negative electrode of the second Schottky diode 233.The antenna of described frequency multiplication antenna 23 is flat plane antenna; Its centre frequency equals output signal frequency.Described filter 22 can pass through input signal, suppresses each harmonic component of input signal.Filter can be low pass filter, and its cut-off frequency is between the second harmonic frequency of frequency input signal and input signal.Filter can be also band pass filter, and its centre frequency equals frequency input signal, and rejection band contains the frequencies of harmonic components of input signal.The capacitance of described capacitance 21 should ensure to input signal and the loss of each harmonic component very little, thus do not affect the radio frequency ground connection of above-mentioned signal.Described quasi-optical device 24 can be high resistance medium lens, and its dielectric material is High Resistivity Si, such as, be quasi-optical device as shown in Figure 2.Described quasi-optical device also can be the semi-open metallic cavity of trumpet type, such as, be quasi-optical device as shown in Figure 3.
Fig. 7 is a kind of implementation structured flowchart of the quasi-optical triductor of 270GHz.90GHz signal, by waveguide-fin-line transition structure 201 feed-in, enters frequency multiplication antenna 204 through capacitance 202, filter 203.Capacitance 202 is patch capacitor, capacitance 47uF; Filter 203 is height impedance type Microstrip Low-Pass, and cut-off frequency is 100GHz, and the degree of suppression near 180GHz, 270GHz is greater than 25dB.The antenna of frequency multiplication antenna 204 adopts butterfly antenna form, and working frequency range is 260-280GHz; Nonlinear device is Schottky diode pair.One end of frequency multiplication antenna is connected with ground 205.Antenna 204, filter 203, transmission line are all produced on quartz substrate 207.Quasi-optical device is the semi-open metallic cavity 208 of trumpet type, and the bottom surface of loudspeaker is metal, and the short circuit identity distance of antenna distance loudspeaker cavity is from being 1/4th of the corresponding space wavelength of 270GHz.
Fig. 8 is the output spectrum of the quasi-optical triductor of 270GHz.Frequency input signal is 90GHz, and power is 20dBm; Output signal frequency is 270GHz, and power is-1.432dBm.
To be that a kind of Terahertz is quasi-optical be biased odd frequency multiplier to Fig. 9, comprising: capacitance 31, filter 32, frequency multiplication antenna 33, capacitance 34, choke induction 35 and quasi-optical device 36.
Figure 10 is the schematic diagram of Terahertz quasi-optical odd frequency multiplication antenna.As shown in Figure 10, described frequency multiplication antenna 33 comprises antenna 331, first Schottky diode 332, second Schottky diode 333 and electric capacity 334; The negative electrode of described first Schottky diode 332 is connected with the anode of the second Schottky diode 333, and the negative electrode of the second Schottky diode 333 is connected with the anode of the first Schottky diode 332 by electric capacity 334.
As shown in Figure 9, input signal, by input 37 feed-in, after capacitance 31, filter 32, is loaded on frequency multiplication antenna 33; Be loaded into pipe that the input signal on frequency multiplication antenna 33 formed by the first Schottky diode 332 on frequency multiplication antenna and the second Schottky diode 333 to generation odd harmonic component; The harmonic component signal of required output radiate by the antenna 331 on frequency multiplication antenna 33.Direct current signal, by DC feedback end 38 feed-in, is loaded on the anode of the first Schottky diode through choke induction 35; The minus earth of the second Schottky diode forms DC loop.Quasi-optical device 36 improves the radiance of antenna further, makes output signal have better directivity.Described frequency multiplication antenna 33 one end is connected with filter 32, and the other end by electric capacity 34 ground connection, thus realizes radiofrequency signal loop.The antenna 331 of described frequency multiplication antenna 33 is flat plane antenna; The centre frequency of flat plane antenna equals output signal frequency.Described filter 32 can pass through input signal, suppresses each harmonic component of input signal; Described filter 32 can be low pass filter, and its cut-off frequency is between the second harmonic frequency of frequency input signal and input signal.Described filter 32 can be also band pass filter, and its centre frequency equals frequency input signal, and rejection band contains the frequencies of harmonic components of input signal.Described capacitance 31 and 34 pairs of input signals and the loss of each harmonic component very little; Described choke induction 35, can suppress input signal and each harmonic component thereof.Described quasi-optical device 36 can be high resistance medium lens, such as, be the quasi-optical device shown in Fig. 2.The dielectric material of described high resistance medium lens is High Resistivity Si.Described quasi-optical device also can be the semi-open metallic cavity of trumpet type, such as, be quasi-optical device as shown in Figure 3.
Figure 11 is the quasi-optical structural representation being biased a kind of implementation of triductor of 270GHz.90GHz signal, by waveguide-fin-line transition structure 301 feed-in, enters frequency multiplication antenna 304 through capacitance 302, filter 303.Electric capacity 302 is patch capacitor, capacitance 47uF; Filter 303 is height impedance type Microstrip Low-Pass, and cut-off frequency is 100GHz, and the degree of suppression near 180GHz, 270GHz is greater than 25dB.The antenna of frequency multiplication antenna 304 adopts butterfly antenna form, and working frequency range is 260-280GHz; Nonlinear device is Schottky diode pair.One end of frequency multiplication antenna 304 is connected with ground 305 by capacitance 311.Antenna, filter, transmission line are all produced on quartz substrate.Quasi-optical device is the semi-open metallic cavity 310 of trumpet type, and frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, and the bottom surface of loudspeaker is short circuit metal face, and the short circuit identity distance of antenna distance loudspeaker cavity is from being 1/4th of the corresponding space wavelength of 270GHz.Input signal is inputted by waveguide mouth 309; Direct current biasing is by terminal 308 feed-in.
Figure 12 is the quasi-optical output spectrum being biased triductor of 270GHz.Frequency input signal is 90GHz, and power is 20dBm; Be biased to-5V; Output signal frequency is 270
GHz, power is 5.2dBm, the power output height about 7dB of triductor more quasi-optical than 270GHz shown in Fig. 7.
Figure 13 is the structural representation of the Terahertz Schottky diode according to the embodiment of the present invention.Frequency multiplication antenna adopts semiconductor technology to make.As shown in figure 13, Terahertz Schottky diode with Semi-insulating GaAs material (61) for substrate, Semi-insulating GaAs material (61) is followed successively by from bottom to top: heavy doping n+GaAs layer (62), light dope n-GaAs layer (63), the concentration of heavy doping n+GaAs layer (62) is 10
18cm
-3magnitude, the concentration of light dope n-GaAs layer (63) is 10
16-10
17cm
-3magnitude, institute's doping is silicon.
Terahertz Schottky diode comprises Schottky contacts anode 71, ohmic contact negative electrode 72, electroplate lead wire 73, raceway groove 74.Silicon dioxide layer 64 is formed on light dope n-GaAs layer 63.Have aperture at silicon dioxide layer 64, Schottky contacts anode 71 is arranged in aperture, and Schottky contacts anode 71 contacts with lightly doped n-type gallium arsenide layer 63 and forms schottky junction; Ohmic contact negative electrode 72 is formed on heavy doping n+ p type gallium arensidep layer 62; Electroplate lead wire 73 is formed on silicon dioxide layer 64 and Schottky contacts anode 71.Electroplate lead wire 73 is connected with Schottky contacts anode 71.
Raceway groove 74 is formed in heavy doping n+GaAs layer 62, light dope n-GaAs layer 63 and silicon dioxide layer 64, and in raceway groove 74, heavy doping n+GaAs layer 62, light dope n-GaAs layer 63 and silicon dioxide layer 64 are removed.The shape of raceway groove 74 is inverted cone shape, the lower surface of raceway groove 74 contacts with Semi-insulating GaAs material substrate 61, the upper surface of raceway groove 74 contacts with electroplate lead wire 73, the side of raceway groove 74 extends to upper surface from the angle that the lower surface of raceway groove 74 is predetermined relative to Semi-insulating GaAs material 61 one-tenth, and the upper surface of raceway groove 74 is greater than the lower surface of raceway groove 74.
The flat plane antenna of frequency multiplication antenna and described Schottky diode use same Semi-insulating GaAs material 61 to be substrate.
Above to the description of embodiments of the invention only for illustration of technical scheme of the present invention; instead of limitation of the scope of the invention; the present invention is not limited to these disclosed embodiments; those skilled in the art can modify to the technical scheme described in foregoing embodiments; or equivalent replacement is carried out to wherein portion of techniques feature, and these amendments or replace and all should fall into protection scope of the present invention.
Claims (17)
1. a Terahertz quasi-optical frequency multiplier, comprises the first capacitance, filter, frequency multiplication antenna and quasi-optical device; Described frequency multiplication antenna comprises antenna and nonlinear device; Input signal is loaded on frequency multiplication antenna after the first capacitance, filter, and input signal is by filter, and the filtered device of each harmonic component of input signal suppresses; The nonlinear device of frequency multiplication antenna produces harmonic component to the input signal be loaded on frequency multiplication antenna; Required output signal radiate by the antenna of frequency multiplication antenna; Quasi-optical device makes output signal have better directivity;
Wherein, the nonlinear device of frequency multiplication antenna is Terahertz Schottky diode, Terahertz Schottky diode with Semi-insulating GaAs material (61) for substrate, Semi-insulating GaAs material (61) is followed successively by from bottom to top: heavy doping n+GaAs layer (62), light dope n-GaAs layer (63), the concentration of heavy doping n+GaAs layer (62) is 10
18cm
-3magnitude, the concentration of light dope n-GaAs layer (63) is 10
16-10
17cm
-3magnitude, institute's doping is silicon; Terahertz Schottky diode comprises Schottky contacts anode (71), ohmic contact negative electrode (72), electroplate lead wire (73), raceway groove (74); Silicon dioxide layer (64) is formed on light dope n-GaAs layer (63), aperture is had at silicon dioxide layer (64), Schottky contacts anode (71) is arranged in aperture, and Schottky contacts anode (71) contacts with lightly doped n-type gallium arsenide layer (63) and forms schottky junction; Ohmic contact negative electrode (72) is formed on heavy doping n+ p type gallium arensidep layer (62); Electroplate lead wire (73) is formed on silicon dioxide layer (64) and Schottky contacts anode (71);
Raceway groove (74) is formed in heavy doping n+GaAs layer (62), light dope n-GaAs layer (63) and silicon dioxide layer (64), and in raceway groove (74), heavy doping n+GaAs layer (62), light dope n-GaAs layer (63) and silicon dioxide layer (64) are removed; The shape of raceway groove (74) is inverted cone shape, the lower surface of raceway groove (74) contacts with Semi-insulating GaAs material (61), the upper surface of raceway groove (74) contacts with electroplate lead wire (73), the side of raceway groove (74) becomes predetermined angle to extend to upper surface from the lower surface of raceway groove (74) relative to Semi-insulating GaAs material (61), and the upper surface of raceway groove (74) is greater than the lower surface of raceway groove (74).
2. Terahertz quasi-optical frequency multiplier according to claim 1, is characterized in that: described Terahertz quasi-optical frequency multiplier also comprises choke induction; Direct current signal is carried on frequency multiplication antenna through choke induction, and choke induction suppresses input signal and each harmonic component thereof.
3. Terahertz quasi-optical frequency multiplier according to claim 2, is characterized in that: described antenna is flat plane antenna, and the centre frequency of flat plane antenna is output signal frequency.
4. Terahertz quasi-optical frequency multiplier according to claim 3, is characterized in that:
The flat plane antenna of frequency multiplication antenna and described Terahertz Schottky diode use same Semi-insulating GaAs material (61) to be substrate.
5. Terahertz quasi-optical frequency multiplier according to claim 2, is characterized in that: described filter is low pass filter, and the cut-off frequency of low pass filter is between the second harmonic frequency of frequency input signal and input signal; Or described filter is band pass filter, the centre frequency of band pass filter equals the frequency of input signal, and rejection band contains the frequencies of harmonic components of input signal.
6. Terahertz quasi-optical frequency multiplier according to claim 2, is characterized in that: the first described capacitance to input signal and the loss of each harmonic component very little, first capacitance block direct current signal direct current signal is carried on frequency multiplication antenna.
7. Terahertz quasi-optical frequency multiplier according to claim 2, is characterized in that: described quasi-optical device is high resistance medium lens, and frequency multiplication antenna is positioned at the focal position of high resistance medium lens; Or described quasi-optical device is the semi-open metallic cavity of trumpet type, and frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, the bottom surface of loudspeaker is metal.
8. Terahertz quasi-optical frequency multiplier according to claim 7, is characterized in that: the dielectric material of described high resistance medium lens is High Resistivity Si, and the plane of high resistance medium lens is close to by frequency multiplication antenna.
9. according to claim 2-4,6 arbitrary claim described in Terahertz quasi-optical frequency multiplier, it is characterized in that: described Terahertz quasi-optical frequency multiplier is quasi-optical No. four frequency multipliers of 200GHz, 50GHz input signal, by port feed-in, enters frequency multiplication antenna after the first capacitance, filter; First capacitance is patch capacitor, capacitance 47uF; Filter is height impedance type Microstrip Low-Pass, and cut-off frequency is 60GHz, and the degree of suppression near 110GHz, 220GHz is greater than 25dB; Frequency multiplication antenna is the monolithic frequency multiplication antenna chip of GaAs base, and antenna adopts logarithm period form, and working frequency range is 180-220GHz; One end of frequency multiplication antenna is connected to the ground; Choke induction is chip inductor, and its inductance value is 10uH; Described quasi-optical device is High Resistivity Si extended hemispherical lens, and frequency multiplication antenna is positioned at the focal position of lens, and High Resistivity Si extended hemispherical lens is close to the frequency multiplication antenna back side.
10. Terahertz quasi-optical frequency multiplier according to claim 1, it is characterized in that: described Terahertz quasi-optical frequency multiplier is the quasi-optical odd frequency multiplier of Terahertz, described nonlinear device has symmetrical I-E characteristic and capacitance-voltage characteristics, nonlinear device is a pair Terahertz Schottky diode, nonlinear device produces odd harmonic component to the input signal be loaded on frequency multiplication antenna, described a pair Terahertz Schottky diode comprises the first Schottky diode and the second Schottky diode, the negative electrode of the first Schottky diode is connected with the second Schottky diode anode, the anode of the first Schottky diode is connected with the negative electrode of the second Schottky diode.
11. Terahertz quasi-optical frequency multiplier according to claim 10, is characterized in that: described antenna is flat plane antenna, and the centre frequency of flat plane antenna is output signal frequency.
12. Terahertz quasi-optical frequency multiplier according to claim 10, is characterized in that: described filter is low pass filter, and the cut-off frequency of low pass filter is between the second harmonic frequency of frequency input signal and input signal; Or described filter is band pass filter, the centre frequency of band pass filter equals the frequency of input signal, and rejection band contains the frequencies of harmonic components of input signal.
13. Terahertz quasi-optical frequency multiplier according to claim 10, is characterized in that: described quasi-optical device is high resistance medium lens, and frequency multiplication antenna is positioned at the focal position of lens; Or described quasi-optical device is the semi-open metallic cavity of trumpet type, and frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, the bottom surface of loudspeaker is metal.
14. Terahertz quasi-optical frequency multiplier according to claim 13, is characterized in that: the dielectric material of described high resistance medium lens is High Resistivity Si, and the plane of high resistance medium lens is close to by frequency multiplication antenna.
15. Terahertz quasi-optical frequency multiplier according to arbitrary claim of claim 10,11, it is characterized in that: described Terahertz quasi-optical frequency multiplier is the quasi-optical triductor of 270GHz, 90GHz input signal, by waveguide-fin-line transition structure feed-in, enters frequency multiplication antenna through the first capacitance, filter; First capacitance is patch capacitor, capacitance 47uF; Filter is height impedance type Microstrip Low-Pass, and cut-off frequency is 100GHz, and the degree of suppression near 180GHz, 270GHz is greater than 25dB; The antenna of frequency multiplication antenna adopts butterfly antenna form, and working frequency range is 260-280GHz; One end of frequency multiplication antenna is connected to the ground; Antenna, filter, transmission line are all produced on quartz substrate; Described quasi-optical device is the semi-open metallic cavity of trumpet type, and frequency multiplication antenna is positioned at the semi-open metallic cavity of trumpet type, and the bottom surface of loudspeaker is metal, and the short circuit identity distance of antenna distance loudspeaker cavity is from being 1/4th of the corresponding space wavelength of 270GHz.
16. Terahertz quasi-optical frequency multiplier according to any one of claim 2-8, it is characterized in that: to be that Terahertz is quasi-optical be biased odd frequency multiplier to described Terahertz quasi-optical frequency multiplier, described Terahertz quasi-optical frequency multiplier also comprises the second capacitance, described frequency multiplication antenna also comprises electric capacity, described nonlinear device comprises the first Schottky diode and the second Schottky diode, the negative electrode of described first Schottky diode is connected with the anode of the second Schottky diode, the negative electrode of the second Schottky diode is connected by the anode of electric capacity with the first Schottky diode, nonlinear device produces odd harmonic component to the input signal be loaded on frequency multiplication antenna, direct current signal, by the feed-in of DC feedback end, is loaded on the anode of the first Schottky diode through choke induction, the minus earth of the second Schottky diode forms DC loop, one end of described frequency multiplication antenna is connected with filter, and the other end by the second capacitance ground connection, thus realizes radiofrequency signal loop.
17. according to claim 2-4, Terahertz quasi-optical frequency multiplier according to any one of 6, it is characterized in that: to be that 270GHz is quasi-optical be biased triductor to described Terahertz quasi-optical frequency multiplier, described Terahertz quasi-optical frequency multiplier also comprises the second capacitance, described frequency multiplication antenna also comprises electric capacity, described nonlinear device comprises the first Schottky diode and the second Schottky diode, the negative electrode of the first Schottky diode is connected with the anode of the second Schottky diode, the negative electrode of the second Schottky diode is connected by the anode of electric capacity with the first Schottky diode, nonlinear device produces odd harmonic component to the input signal be loaded on frequency multiplication antenna, direct current signal, by the feed-in of DC feedback end, is loaded on the anode of the first Schottky diode through choke induction, the minus earth of the second Schottky diode forms DC loop, one end of described frequency multiplication antenna is connected with filter, and the other end by the second capacitance ground connection, thus realizes radiofrequency signal loop, 90GHz signal, by waveguide-fin-line transition structure feed-in, enters frequency multiplication antenna through the first capacitance, filter, first capacitance is patch capacitor, capacitance 47uF, filter is height impedance type Microstrip Low-Pass, and cut-off frequency is 100GHz, and the degree of suppression near 180GHz, 270GHz is greater than 25dB, the antenna of frequency multiplication antenna adopts butterfly antenna form, and working frequency range is 260-280GHz, described antenna, filter, transmission line are all produced on quartz substrate, quasi-optical device is the semi-open metallic cavity of trumpet type, and the bottom surface of loudspeaker is metal, and the short circuit identity distance of antenna distance loudspeaker cavity is from being 1/4th of the corresponding space wavelength of 270GHz.
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| CN103219944B (en) * | 2013-04-23 | 2015-09-16 | 华南师范大学 | A kind of frequency multiplier based on Low Dimensional Semiconductor Structures |
| CN105897170B (en) * | 2016-04-27 | 2018-11-20 | 加驰（厦门）微电子股份有限公司 | Edge combined type digital frequency multiplier based on on-chip transformer |
| CN107329347B (en) * | 2017-06-08 | 2020-01-03 | 中国电子科技集团公司第五十四研究所 | Radiation power enhanced miniaturized terahertz source |
| CN107367247B (en) * | 2017-06-09 | 2019-12-13 | 北京工业大学 | Frequency multiplication type microstrip patch antenna strain sensor |
| CN109855728B (en) * | 2019-01-23 | 2021-04-23 | 嘉兴腓特烈太赫科技有限公司 | Full-period detector |
| CN112886930A (en) * | 2021-01-13 | 2021-06-01 | 电子科技大学 | Millimeter wave/terahertz frequency doubling circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101656344A (en) * | 2009-09-28 | 2010-02-24 | 中国科学院微电子研究所 | Multiplier of left-hand nonlinear transmission line |
| CN102104363A (en) * | 2011-03-01 | 2011-06-22 | 北京大学 | Tera-hertz silica-based quadrupler and frequency multiplier |
| US8035083B1 (en) * | 2007-04-07 | 2011-10-11 | Microtech Instruments, Inc. | Terahertz tunable sources, spectrometers, and imaging systems |
| CN202043072U (en) * | 2011-03-01 | 2011-11-16 | 武汉大学 | Frequency multiplier |
-
2012
- 2012-10-11 CN CN201210382948.9A patent/CN102904528B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8035083B1 (en) * | 2007-04-07 | 2011-10-11 | Microtech Instruments, Inc. | Terahertz tunable sources, spectrometers, and imaging systems |
| CN101656344A (en) * | 2009-09-28 | 2010-02-24 | 中国科学院微电子研究所 | Multiplier of left-hand nonlinear transmission line |
| CN102104363A (en) * | 2011-03-01 | 2011-06-22 | 北京大学 | Tera-hertz silica-based quadrupler and frequency multiplier |
| CN202043072U (en) * | 2011-03-01 | 2011-11-16 | 武汉大学 | Frequency multiplier |
Non-Patent Citations (2)
| Title |
|---|
| 140GHz关键射频组件研究;王成等;《信息与电子工程》;20111031;第9卷(第5期);第564-568页 * |
| 太赫兹通信系统和太赫兹天线技术;张金玲等;《电波科学学报》;20110630;第26卷;第39-43页 * |
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