CN106341085B - Millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor - Google Patents
Millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor Download PDFInfo
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- CN106341085B CN106341085B CN201610832600.3A CN201610832600A CN106341085B CN 106341085 B CN106341085 B CN 106341085B CN 201610832600 A CN201610832600 A CN 201610832600A CN 106341085 B CN106341085 B CN 106341085B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/05—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using non-linear capacitance, e.g. varactor diodes
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Abstract
A kind of millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor includes input filter unit, input capacitance, five section coplanar waveguide transmission line units of period load, the four potential barrier of heterogenous junction varactors unit cascaded with period load coplanar waveguide transmission line, output capacitance.Every section coplanar waveguide transmission line unit is constituted by rectangle broken line inductance in parallel, by two sections of series connection coplanar waveguide transmission lines of center asymmetrical load of rectangle broken line inductance in parallel, and by one section of transmission line, with defect the cascade of broken line inductance is constituted rectangle broken line inductance.The present invention uses monolithic integrated microwave circuit surface wave waveguide technology together, introduce the distinctive symmetrical capacitance-voltage characteristics of heterojunction barrier varactor, utilize the ultra wide band dispersion characteristics of balanced structure left hand transmission line, using auto bias circuit structure, reached triple-frequency harmonics high conversion efficiency, triple-frequency harmonics output bandwidth it is big, without the good technical effect of idle circuit, even-order harmonic rejection characteristic.
Description
Technical field
The invention belongs to millimetre-wave circuit technical fields in microelectronics, and in particular to one kind is based on heterojunction barrier varactor
One-dimensional array millimeter wave trebling circuit.
Background technique
In recent years, the special performances such as the transient state, broadband property of THz wave, coherence, low energy, in THz wireless communication, imaging
Extensive concern is obtained with fields such as safety detections.The acquisition in the source high-output power THz is the key core in entire THz application
Module and technical problem.The source THz based on solidstate electronics usually utilizes Gunn diode, IMPATT etc. non-linear in low frequency end
Device directly generates, in the source THz front end, due to the limitation of material and device architecture, and the oscillation output based on Gunn diode
Frequency is online to arrive 300GHz (InP) for 100GHz (GaAs), therefore often passes through frequency multiplier chain for low frequency signal source frequency multiplication to THz wave
Section.Heterojunction barrier varactor is the Ideal Nonlinear diode in frequency multiplier chain, has symmetrical capacitance-voltage characteristics and opposition
The I-E characteristic of title is the preferred element of odd harmonic generator.In the case where not changing device preparation process flow, function
Rate bearing capacity can cut engineering flexible design by extension potential barrier of heterogenous junction number, and preparation process is simple and reliable.With hetero-junctions
Potential barrier transfiguration is that the trebling circuit of non-linear element can effectively inhibit even-order harmonic, and circuit structure is simple, without additional
Idle circuit, can produce the pure triple-frequency harmonics of high-output power by being simply input output optimum impedance circuit
Signal is usually used in the generation of millimeter wave/submillimeter signal.
Left hand transmission line is a kind of artificial synthesized left hand electromagnetic media, is made of, has series capacitance and shunt inductance cascade
There are negative permittivity, negative magnetoconductivity and negative index, when electromagnetic wave is propagated wherein, wave vector direction and direction of energy flow are on the contrary, table
Reveal unusual dispersion characteristics.By the potential barrier of heterogenous junction of the left hand transmission line of fantastic dispersion properties and symmetrical capacitance-voltage characteristics
Transfiguration is compound, constitutes artificial left-hand nonlinear transmission line, can produce the ultra wide band harmonic signal of high-output power.Left hand is non-
Linear transfer line has Self Matching characteristic and high pass characteristic, inhibits harmonic signal without additional matching and filter cell, can
With the harmonic signal that the varactor distortion that selects to spread through sex intercourse generates, left-hand nonlinear transmission is depended on to the rejection ability of harmonic signal
Line self structure parameter has broad application prospects in terms of harmonic wave generation.
Under normal conditions, using heterojunction barrier varactor as the trebling circuit of core, the optimal impedance circuit of input and output
Using microstrip transmission line structure (such as microstrip line of short-circuit structure), the effective bandwidth of micro-strip impedance matching circuit is narrow.The structure
There are following inherent shortcomings for circuit: need to be using complicated via hole and back gold process, triple-frequency harmonics output bandwidth is lower.
Summary of the invention
The purpose of the present invention is using Monolithic Microwave Integrated Circuit Technology, in conjunction with the ultra wide band frequency of balance left hand transmission line
Response and structural parameters Self Matching characteristic, using the odd harmonic characteristic of symmetrical capacitance-voltage potential barrier of heterogenous junction transfiguration, using list
Piece microwave integrated circuit technology, propose a kind of circuit structure is simple, preparation process is simple, even-order harmonic rejection characteristic is good,
The roomy millimeter wave broadband list based on heterojunction barrier varactor of output power, high conversion efficiency, effective harmonic wave band
Piece frequency tripler.
Technical scheme is as follows:
A kind of millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor, it includes the input once connected
Filter unit, input capacitance, five section coplanar waveguide transmission line units of period load and period load coplanar wave guide transmission
4 unit cascaded potential barrier of heterogenous junction varactors of line, output capacitance.
The input filter unit, specifically can be by humorous three times by generating harmonic signal for reflecting in input port
The series connection coplanar waveguide transmission line of the corresponding quarter-wave open-circuit line of wave and two sections of asymmetrical loads, which cascades, to be constituted.
The coplanar waveguide transmission line unit by rectangle broken line inductance in parallel, centered on rectangle broken line inductance in parallel it is symmetrical
2 sections of first coplanar waveguide transmission lines of series connection of load are constituted；The parallel connection broken line inductance by transmission line and defect broken line inductance
Cascade is constituted.
The heterojunction barrier varactor is by 23 potential barrier In0.53Ga0.47As/In0.52Al0.48As/AlAs table top series connection structure
At.Specifically, the spacing between two table tops is 3 μm, and the capacitor under zero-bias voltage is 12fF, potential barrier of heterogenous junction transfiguration electrode both ends
Charge is stored with the symmetric relation of applying bias voltage are as follows:
Its electric current with applying bias voltage antisymmetric relation are as follows: I (V)=0.2*10-6*sinh(0.00057*V+
0.000068*V3)。
The capacitor of the coplanar waveguide transmission line unit and asymmetrical load at coplanar waveguide transmission line unit both ends constitutes multiple
Left-and-right-hand transmission line unit is closed, capacitor is potential barrier of heterogenous junction transfiguration and capacitance, and capacitance size is potential barrier of heterogenous junction
2 times of capacitor zero bias capacitor, 24fF.
The capacitance that outputs and inputs is integrated using microwave using top-level metallic-dielectric-underlying metal structure
Circuit technology preparation.
It is based on the key technical problems of the millimeter wave broadband monolithic frequency tripler of heterojunction barrier varactor heterogeneous
Equilibrium relation between junction barrier number and heterojunction barrier varactor dead resistance, potential barrier of heterogenous junction number is more, corresponds to maximum
Capacitance ratio is bigger, and load power is bigger, and harmonic generation efficiency is bigger, but its parasitic series resistance is bigger；Series resistance is to determine
Determine the principal element of harmonic generation efficiency, series resistance is bigger, and harmonic generation efficiency is lower, otherwise higher, therefore, should select to close
Suitable potential barrier of heterogenous junction number is compromised in its dead resistance and load power, maximum capacitor ratio characteristic parameter；It is passed in balance left hand
In the realization of defeated cable architecture, careful design coplanar waveguide transmission line unit and the heterojunction barrier varactor institute in the load of its both ends
The composite right/left-handed transmission line unit of composition is equal to parallel connection according to the corresponding series resonance of the distribution parameter of coplanar waveguide transmission line
Resonance, while ensuring that the Bragg impedance real part impedance of composite right/left-handed transmission line unit under this condition is maintained at 50 in front end
Europe.
Beneficial effects of the present invention:
1. using coplanar waveguide transmission line structural configuration, avoiding complicated via hole and carrying on the back golden preparation process；
2. realizing wide bandwidth using the frequency response pass-band performance of its ultra wide band using the left hand transmission line of balanced structure
Triple-frequency harmonics output channel；Input port increase triple-frequency harmonics virtual earth, enhancing triple-frequency harmonics input channel reflective stopping,
Improve triple-frequency harmonics output power；
3. using symmetrical capacitance-voltage characteristics, harmonic signal is generated using its odd harmonic characteristic；Using maximum electricity
Hold the heterojunction barrier varactor than being 4, effectively enhances triple-frequency harmonics output power.
4. using 23 potential barrier of heterogenous junction In0.53Ga0.47As/In0.52Al0.48As/AlAs table top cascaded structure, enhancing electricity
Road inputs load power, effectively improves triple-frequency harmonics output power.
Detailed description of the invention
Fig. 1 is the structure of the millimeter wave broadband monolithic frequency tripler proposed by the present invention based on heterojunction barrier varactor
Figure；
Fig. 2 is the structure chart of input filter unit in present example；
Fig. 3 and Fig. 3 a is the structure of the structure chart of coplanar waveguide transmission line unit and broken line inductance in parallel in present example
Figure；
Fig. 4 a and Fig. 4 b are the plane ignorance figure and vertical interface figure of heterojunction barrier varactor structure in present example；
Fig. 5 a is the C-V performance diagram of heterojunction barrier varactor in present example；
Fig. 5 b is the I-V characteristic curve graph of heterojunction barrier varactor in present example；
Fig. 6 a and Fig. 6 b are the top view and section views of the layout size of input and output capacitance in present example；
Fig. 7 a is the millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor that present example provides
Dispersion characteristic curve figure；
Fig. 7 b is the millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor that present example provides
S21 parametric plot；
Fig. 8 a is the millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor that present example provides
Triple-frequency harmonics output characteristic curve figure under different input power；
Fig. 8 b is the millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor that present example provides
Other harmonic wave performance diagrams under different input power.
Specific embodiment
The technology of the present invention is described in detail with reference to the accompanying drawings and examples
As shown in Figure 1, the present embodiment provides the millimeter wave broadband monolithic frequency triplers based on heterojunction barrier varactor
Structural schematic diagram, the frequency tripler include the input filter unit 1 once connected, five sections for inputting capacitance 2, period load
Coplanar waveguide transmission line unit 3, the 4 potential barrier of heterogenous junction varactors unit cascaded with period load coplanar waveguide transmission line
4, capacitance 2 is exported, they are produced on 80 μm of InP substrate and the dielectric of 300nm.
As shown in Fig. 2, input filter unit 1 is right by the corresponding quarter-wave open-circuit line 1-1 of triple-frequency harmonics and two sections
Claim series connection the second coplanar waveguide transmission line 1-2 of load to cascade to constitute, the triple-frequency harmonics letter for generating in input port reflection
Number, triple-frequency harmonics output power is exported with enhancing.
The corresponding quarter-wave open-circuit line 1-1 structure size of the triple-frequency harmonics is as follows, center conductor micro-strip line width
Width be 40 μm, length is 107.5 μm, and the gap width on center conductor and two side conductors ground is 25 μm.
The second coplanar waveguide transmission line 1-2 length be 95 μm, center conductor micro-strip width be 20 μm, center conductor with
The gap width on two side conductor ground is 50 μm.
As shown in figure 3, coplanar waveguide transmission line unit 3 by rectangle broken line inductance 3-1 in parallel, with rectangle broken line inductance in parallel
It is constituted for 2 sections of first coplanar waveguide transmission line 3-2 of series connection of center asymmetrical load.
As shown in Figure 3a, by transmission line 3-1-1, with defect broken line inductance 3-1-2 cascade is constituted broken line inductance 3-1 in parallel.
The transmission line 3-1-1 structure size is as follows: width is 10 μm, and length is 50 μm.The defect broken line inductance 3-1-2 under
Supreme to be divided into three sections, length is respectively 15 μm, 30 μm and 15 μm, and width is 10 μm；Slit width of the defect ground around broken line inductance
Degree is 5 μm.
The first coplanar waveguide transmission line 3-2 structure size is as follows: length is 80 μm, and center conductor micro-strip width is 20
μm, the gap width on center conductor and two side conductors ground is 50 μm.
As shown in figures 4 a and 4b, the millimeter wave broadband monolithic three provided in this embodiment based on heterojunction barrier varactor
Potential barrier of heterogenous junction varactor is by 23 potential barrier In in frequency multiplier0.53Ga0.47As/In0.52Al0.48The series connection of As/AlAs table top
It constitutes, the spacing between two table tops is 3 μm, and the capacitor under zero-bias voltage is 12fF, the storage of potential barrier of heterogenous junction transfiguration electrode both ends
Charge with applying bias voltage symmetric relation are as follows:Wherein potential barrier thickness b=
13nm, device active region area A=30 μ2, the space layer that undopes s=5nm, barrier material relative dielectric constant εb=12.7, it adjusts
Preparative layer material relative dielectric constant εd=13.9, modulating layer doping concentration Nd=1.0e23, ohmic contact layer n+Doping concentration Nd=
1.0e25, it is stored in the charge Q at device both ends, device work problem T, unit charge institute carried chargeq, Boltzmann constant k,Potential barrier of heterogenous junction varactor both ends electric current with applying bias voltage antisymmetric relation are as follows: I (V)=
0.2*10-6*sinh(0.00057*V+0.000068*V3)。
Dotted line frame in all of above attached drawing is not structure lines, but for more than clear signal each structural unit,
Such as input filter unit 1, the second coplanar waveguide transmission line 1-2, they are distinguished with dashed box, to be clearly understood that.
Fig. 5 gives the present embodiment based on hetero-junctions in the millimeter wave broadband monolithic frequency tripler of heterojunction barrier varactor
Potential barrier transfiguration I-V and C-V performance diagram as can be seen from the figure has symmetrical C-V characteristic in heterojunction barrier varactor
With antisymmetric I-V characteristic, maximum capacitor ratio reaches the inclined capacitor of 4,0V and only has 12fF in -15-0V bias voltage, 15V biasing
Electric current under voltage only has 40nA, and it is millimeter wave/submillimeter wave frequency range harmonic oscillator ideal kernel that consumption dc power is small
Component.
As shown in figures 6 a and 6b, the millimeter wave broadband monolithic three provided in this embodiment based on heterojunction barrier varactor
It inputted in frequency multiplier, export capacitance using top-level metallic-dielectric-underlying metal structure, utilize microwave integrated circuit
Technique preparation, capacitance are 2 times of heterojunction barrier varactor zero offset capacitance, i.e. 24fF.
The domain specific structure size of the capacitance is as follows: capacitor bottom surface rectangular metal figure is 50 μ m, 30 μ
M, the rectangular metal figure of capacitor upper bottom surface isolation capacitance electrode 1 are 26 μm of 20 μ m, capacitor upper bottom surface isolation capacitance electrode 2
Rectangular metal figure is 26 μm of 30 μ m, and the etching size that connection bottom surface metal connects figure with upper bottom surface electrode is 6 μ ms
22 μm, upper bottom surface and the intermetallic dielectric of bottom surface are Si3N4, dielectric is with a thickness of 300nm.
Hetero-junctions of above coplanar waveguide transmission line unit 3 and asymmetrical load at 3 both ends of coplanar waveguide transmission line unit
Potential barrier varactor 4 and input, output capacitance constitute composite right/left-handed transmission line unit.
As illustrated in figs. 7 a and 7b, Fig. 7 a is the corresponding dispersion characteristic curve figure of composite right/left-handed transmission line unit.This is compound
Left-and-right-hand transmission line is balanced structure, has 25-360GHz ultra wide band frequency passband individual features, to become based on potential barrier of heterogenous junction
The millimeter wave broadband monolithic frequency tripler for holding pipe provides very wide triple-frequency harmonics channel.Fig. 7 b is to load and be not loaded with input filter
The corresponding frequency response characteristic figure of 5 section composite right/left-handed transmission lines, is not loaded with input filter unit in the case of 1 two kinds of wave unit
It is shown in solid in frequency response curve such as Fig. 7 b, in the corresponding frequency response curve such as Fig. 7 b for loading 1 structure of input filter unit
Shown in dotted line.As seen from the figure, the frequency response of Fig. 7 a is shown dispersion characteristics and Fig. 7 b solid line illustrated is consistent.
The triple-frequency harmonics of Fig. 8 a millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor provided is provided
The millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor that characteristics of output power curve graph and Fig. 8 b are provided
Even-order harmonic, fundamental wave and quintuple harmonics characteristics of output power curve graph, the spacing of input power 20-30dBm, 2dBm, input
Signal frequency 50-150GHz, it is seen then that the millimeter wave broadband monolithic frequency tripler pair based on heterojunction barrier varactor in the present invention
Even-order harmonic has good inhibition, and fundamental signal has been decayed substantially in 200-350GHz frequency, quintuple harmonics output work
Rate very little can be ignored, therefore in the available more pure harmonic signal of 200-350GHz frequency range.The present invention is implemented
For maximum triple-frequency harmonics (267GHz) output power of the frequency tripler of offer up to 15.9dBm, corresponding transfer efficiency reaches 8%,
Under 28dBm input power, triple-frequency harmonics output power is greater than 0dBm in the 215-345GHz frequency range, three times output harmonic wave
Three dB bandwidth is up to 23.6%, has good triple-harmonic filling characteristic.
The foregoing is merely preferred embodiments of the invention, are not intended to restrict the invention, for the skill of this field
For art personnel, the present invention can have various changes and variation.All within the spirits and principles of the present invention, that is done any repairs
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (9)
1. the millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor, feature exist: including sequentially connected defeated
Enter filter unit (1), loaded for the capacitance of input, five section coplanar waveguide transmission line units (3) of period load and period
Coplanar waveguide transmission line unit cascaded 4 heterojunction barrier varactors (4), the capacitances for output；
The input filter unit (1), which is used to reflect in input port, generates harmonic signal；
The coplanar waveguide transmission line unit (3) by rectangle broken line inductance (3-1) in parallel, centered on rectangle broken line inductance in parallel
Two sections of first coplanar waveguide transmission lines of series connection (3-2) of asymmetrical load are constituted；The parallel connection broken line inductance (3-1) is by transmission line
(3-1-1) with defect broken line inductance (3-1-2) cascade is constituted；
The heterojunction barrier varactor (4) is by two three potential barrier In0.53Ga0.47As/In0.52Al0.48As/AlAs table top series connection structure
At；
The capacitor of the coplanar wave guide transmission unit (3) and asymmetrical load at each transmission unit both ends constitutes composite left-and-right-hand knot
Structure, the capacitor is heterojunction barrier varactor and capacitance, and capacitance size is potential barrier of heterogenous junction capacitor zero bias electricity
Twice held.
2. the millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor, feature exist as described in claim 1
In: the spacing between two table tops of the heterojunction barrier varactor (4) is 3 μm, and the capacitor under zero-bias voltage is 12fF, heterogeneous
Junction barrier transfiguration electrode both ends store charge with the symmetric relation of applying bias voltage are as follows:
Wherein potential barrier thickness is b,
Device active region area is A, and the space layer that undopes is s, and barrier material relative dielectric constant is εb, layer material is modulated with respect to dielectric
Constant is εd, modulating layer doping concentration is Nd, the charge for being stored in device both ends is Q, and device work problem is T, unit charge institute
Carried charge is q, Boltzmann constant k,Its electric current with applying bias voltage antisymmetric relation are as follows: I (V)
=0.2*10-6*sinh(0.00057*V+0.000068*V3)。
3. the millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor, feature exist as described in claim 1
In: the first coplanar waveguide transmission line (3-2) length is 80 μm, and center conductor width is 20 μm, and center conductor is led with two sides
The gap width on body ground is 50 μm.
4. the millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor, feature exist as described in claim 1
In: transmission line (3-1-1) width is 10 μm, and length is 50 μm；The defect broken line inductance (3-1-2) divide from bottom to up
It is three sections, length is respectively 15 μm, 30 μm and 15 μm, and width is 10 μm；Defect gap width around broken line inductance be 5 μ
m。
5. the millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor, feature exist as described in claim 1
In: the input filter unit (1) by the corresponding quarter-wave open-circuit line (1-1) of triple-frequency harmonics and two sections of asymmetrical loads
The second coplanar waveguide transmission line (1-2) cascade of connecting is constituted.
6. the millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor, feature exist as claimed in claim 5
In: the quarter-wave open-circuit line (1-1) uses coplanar waveguide structure, and the width of center conductor line width is 40 μm, length
It is 107.5 μm, the gap width on center conductor and two side conductors ground is 25 μm；Second coplanar waveguide transmission line (1-2) is long
Degree is 95 μm, and center conductor width is 20 μm, and the gap width on center conductor and two side conductors ground is 50 μm.
7. the millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor, feature exist as described in claim 1
In: the capacitance for Gong outputting and inputting uses top-level metallic-dielectric-underlying metal structure, integrated using microwave
Circuit technology preparation.
8. the millimeter wave broadband monolithic frequency tripler based on heterojunction barrier varactor, feature exist as claimed in claim 7
In: the dielectric thickness 300nm, underlying metal is 60 μm long, 20 μm wide, and top-level metallic is 40 μm long, 20 μm wide, connection bottom gold
Belong to and the etching window length of top-level metallic is 8 μm, width is 18 μm.
9. such as the described in any item millimeter wave broadband monolithic frequency triplers based on heterojunction barrier varactor of claim 1-8,
It is characterized by: the input filter unit (1), coplanar waveguide transmission line unit (3), capacitance, potential barrier of heterogenous junction transfiguration
Guan Jun is produced on 80 μm of InP substrate and the dielectric of 300nm.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2047909B2 (en) * | 1970-09-29 | 1977-02-03 | Siemens AG, 1000 Berlin und 8000 München | Broadband parametric freq. multiplier for VHF radio receiver - has four varactor diodes making ring modulator |
| RU2108656C1 (en) * | 1994-09-30 | 1998-04-10 | Институт физики им.Л.В.Киренского СО РАН | Frequency multiplier |
| CN102468345A (en) * | 2010-11-15 | 2012-05-23 | 中国科学院微电子研究所 | Heterojunction barrier varactor and preparation method thereof |
| CN203313122U (en) * | 2013-06-19 | 2013-11-27 | 东南大学 | Frequency multiplier based on micro mechanical direct thermoelectric power sensor |
| CN104579176A (en) * | 2015-01-07 | 2015-04-29 | 电子科技大学 | Subharmonic harmonic mixer based on coplanar waveguide transmission lines |
-
2016
- 2016-09-19 CN CN201610832600.3A patent/CN106341085B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2047909B2 (en) * | 1970-09-29 | 1977-02-03 | Siemens AG, 1000 Berlin und 8000 München | Broadband parametric freq. multiplier for VHF radio receiver - has four varactor diodes making ring modulator |
| RU2108656C1 (en) * | 1994-09-30 | 1998-04-10 | Институт физики им.Л.В.Киренского СО РАН | Frequency multiplier |
| CN102468345A (en) * | 2010-11-15 | 2012-05-23 | 中国科学院微电子研究所 | Heterojunction barrier varactor and preparation method thereof |
| CN203313122U (en) * | 2013-06-19 | 2013-11-27 | 东南大学 | Frequency multiplier based on micro mechanical direct thermoelectric power sensor |
| CN104579176A (en) * | 2015-01-07 | 2015-04-29 | 电子科技大学 | Subharmonic harmonic mixer based on coplanar waveguide transmission lines |
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