CN117276325B - Terahertz diode structure, frequency multiplier and electronic equipment - Google Patents
Terahertz diode structure, frequency multiplier and electronic equipment Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
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Abstract
The invention relates to the technical field of terahertz communication, and provides a terahertz diode structure, a frequency multiplier and electronic equipment, which comprise two die series queues connected in parallel, wherein the die series queues comprise at least two Schottky diodes which are sequentially and serially arranged, the section of anode posts of the Schottky diodes is elliptical, and the section of the anode posts of the Schottky diodes is the same; along the signal transmission direction, in a die series queue, a body position difference exists between at least two Schottky diodes, and the K value between the Schottky diodes with the body position difference increases or decreases along the signal transmission direction. According to the invention, through improving the structure of the anode column, the oval long axis value of the anode column between the Schottky diodes with the body position difference is gradually increased or gradually decreased, so that the negative influence on the absorption of the Schottky diodes caused by the body position difference is counteracted, the consistency of the absorption of the Schottky diodes on the basis wave energy is improved, and the frequency doubling efficiency is improved.
Description
Technical Field
The invention relates to the technical field of terahertz communication, in particular to a terahertz diode structure, a frequency multiplier and electronic equipment.
Background
Terahertz (THz) waves are also called Terahertz rays, and the frequency band contains electromagnetic waves with frequencies from 0.1THz to 10THz, and the corresponding wavelength range is 0.03mm to 3mm, and the frequency of the Terahertz waves is higher than that of microwaves and lower than that of infrared rays; the energy level is then between electrons and photons. Terahertz waves have the characteristics of high bandwidth, rich carried information, high space-time coherence, good directionality and the like, and have very wide application and research values. The terahertz frequency source is a key factor in the development of terahertz technology, and the performance index of the terahertz frequency source influences the performance of the whole terahertz system. The terahertz signal obtained by the frequency multiplication mode has the advantages of good high-frequency stability, wide working frequency band and the like, so that the frequency multiplier becomes a common scheme for obtaining the terahertz source.
In the process of realizing the invention, the inventor finds that the following problems exist in the prior art, and the existing balanced tripler usually adopts a ring-shaped diode structure, and as the diode arrangement in the ring-shaped diode structure is parallel to the microstrip line, a body position difference exists between the front and rear arranged diodes, and the body position difference is influenced by the transmission mode of electromagnetic waves, and the fundamental wave absorbed by the diodes can generate certain phase difference to influence the working efficiency of frequency multiplication.
Disclosure of Invention
The purpose of this application is to provide a terahertz diode structure, frequency multiplier and electronic equipment, solves the above-mentioned technical problem that exists among the prior art, mainly includes following three aspects:
the first aspect of the application provides a terahertz diode structure, which comprises two die series queues connected in parallel, wherein the die series queues comprise at least two schottky diodes which are sequentially connected in series, the cross section of anode posts of the schottky diodes is elliptical, and the cross section of the anode posts of the schottky diodes is the same; along the signal transmission direction, in a tube core serial queue, a body position difference exists between at least two Schottky diodes, the K value between the Schottky diodes with the body position difference increases or decreases along the signal transmission direction, and the K value is the long axis value of the oval section of the anode column.
Further, the two die series queues are symmetrically arranged.
Further, the terahertz diode structure is an axisymmetric structure or a centrosymmetric structure.
Further, the terahertz diode structure further comprises a first boss and a second boss, the current input end of the tube core serial queue is connected with the first boss, and the current output end of the tube core serial queue is connected with the second boss.
Further, in a die series queue, the schottky diodes are arranged in a straight line.
Further, in one die series queue, the schottky diodes are equally spaced.
The second aspect of the application provides a frequency multiplier, which is a terahertz odd harmonic frequency multiplier and comprises an input waveguide, an output waveguide and the terahertz diode structure, wherein the input waveguide, the terahertz diode structure and the output waveguide are connected through signal transmission in sequence.
Furthermore, the frequency multiplier further comprises an input microstrip waveguide transition structure, an input matching microstrip, a filter, an output matching microstrip and an output microstrip waveguide transition structure, wherein the input waveguide, the input microstrip waveguide transition structure, the input matching microstrip, the filter, the terahertz diode structure, the output matching microstrip, the output microstrip waveguide transition structure and the output waveguide are connected through signal transmission in sequence.
Further, the input waveguide includes a first down-height waveguide for converting the fundamental wave from the TE10 mode to the quasi-TEM mode, and the output waveguide includes a second down-height waveguide for converting the fundamental wave from the quasi-TEM mode to the TE10 mode.
A third aspect of the present application provides an electronic device, including the terahertz diode structure described above or the frequency multiplier described above.
Compared with the prior art, the invention has at least the following technical effects:
according to the invention, by improving the structure of the anode column, the sectional areas of the anode columns of the Schottky diodes are controlled to be the same, so that the junction capacitance junction resistance of the Schottky diodes is kept close, and the elliptical long axis value of the anode column between the Schottky diodes with the body position difference is gradually increased or gradually decreased, so that the negative influence on the absorption of the Schottky energy by the body position difference is counteracted, the consistency of the absorption of the Schottky energy by the Schottky diodes is improved, and the frequency doubling efficiency is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following description will briefly explain the embodiments of the present invention or the drawings used in the description of the prior art, and it is obvious that the drawings described below are only some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a terahertz diode structure of the present invention;
fig. 2 is a schematic structural diagram of a schottky diode of the present invention;
FIG. 3 is a schematic diagram of a second structure of the terahertz diode structure of the present invention;
FIG. 4 is a schematic diagram of a third structure of the terahertz diode structure of the present invention;
FIG. 5 is a schematic diagram of a fourth structure of the terahertz diode structure of the present invention;
FIG. 6 is a schematic diagram of a balanced tripler of the present invention;
FIG. 7 is a schematic diagram of the electric field vector of the terahertz diode structure of the present invention;
FIG. 8 is a graph comparing the frequency multiplication efficiency of the balanced tripler and the conventional tripler of the present invention;
FIG. 9 is a schematic diagram of a balanced frequency doubler of the present invention;
in the figure:
10. a terahertz diode structure; 110. a schottky diode; 111. an anode column; 120. a first boss; 130. a second boss; 140. a connecting piece; 210. an input waveguide; 211. a first standard waveguide; 212. a first reduced height waveguide; 220. inputting a microstrip waveguide transition structure; 230. a filter; 240. outputting a microstrip waveguide transition structure; 250. an output waveguide; 251. a second reduced height waveguide; 252. a second standard waveguide; 260. inputting a matching microstrip; 270. outputting a matching microstrip; 280. and a grounding end.
Detailed Description
The following description provides many different embodiments, or examples, for implementing different features of the invention. The elements and arrangements described in the following specific examples are presented for purposes of brevity and are provided only as examples and are not intended to limit the invention.
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, based on the embodiments of the invention, which are apparent to those of ordinary skill in the art without inventive faculty, are intended to be within the scope of the invention. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, based on the embodiments of the invention, which are apparent to those of ordinary skill in the art without inventive faculty, are intended to be within the scope of the invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and the like are to be construed broadly, and may be fixedly attached, detachably attached, or integrally formed, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the present invention, unless expressly stated or limited otherwise, a first feature may include first and second features directly contacting each other, either above or below a second feature, or through additional features contacting each other, rather than directly contacting each other. Moreover, the first feature being above, over, and on the second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being below, beneath, and beneath the second feature includes the first feature being directly below and obliquely below the second feature, or simply indicates that the first feature is less level than the second feature.
Example 1:
the existing balanced tripler usually adopts a ring-shaped diode structure, and as the diode arrangement in the ring-shaped diode structure is parallel to the microstrip line, a body position difference exists between the diodes arranged front and back, and the body position difference is influenced by the transmission mode of electromagnetic waves, the diodes arranged in front and the fundamental wave absorbed by the diodes arranged behind can generate certain phase difference, so that the consistency of the fundamental wave energy absorbed by the diodes is poor, and the frequency doubling efficiency is reduced; in order to solve the technical problem of frequency multiplication efficiency deterioration caused by body position difference, the embodiment of the application provides a terahertz diode structure 10, as shown in fig. 1, which comprises two die series queues connected in parallel, wherein each die series queue comprises at least two schottky diodes 110 which are sequentially connected in series, as shown in fig. 2, the section of an anode column 111 of each schottky diode 110 is elliptical, and the section of the anode column 111 of each schottky diode 110 is the same; along the signal transmission direction, in one die series queue, there is a body position difference between at least two schottky diodes 110, and the K value between the schottky diodes 110 with the body position difference increases or decreases along the signal transmission direction, where the K value is the major axis value of the elliptical cross section of the anode column 111.
By improving the structure of the anode column 111, the cross section of the anode column 111 of the schottky diode 110 is changed from a traditional round shape to an oval shape, and the cross section of the anode column 111 of the schottky diode 110 is controlled to be the same, so that the junction capacitance junction resistance of the schottky diode 110 is kept close, the energy adaptation caused by overlarge difference of the anode column 111 of the schottky diode 110 is avoided, the oval long axis value of the anode column 111 between the schottky diodes 110 with the body position difference is gradually increased or gradually decreased along the signal transmission direction, the negative influence of the body position difference on the absorption of the schottky wave energy of the schottky diode 110 is counteracted, the consistency of the absorption of the schottky wave energy of the schottky diode 110 is improved, and the frequency doubling efficiency is improved.
To suppress harmonics, two die series queues may be symmetrically arranged, specifically, may be axisymmetric (the mounting position of the schottky diode 110 is in an axisymmetric structure), as shown in fig. 3 and fig. 4; or may be centrosymmetric as shown in figure 1.
To further improve the harmonic suppression performance, the terahertz diode structure 10 may be provided as a center-symmetrical structure, as shown in fig. 1.
In some embodiments, the terahertz diode structure 10 may be arranged in an axisymmetric structure to improve harmonic suppression performance, as shown in fig. 3, 4, and 5.
In order to facilitate the serial connection and installation of the schottky diode 110 in the die serial queue, the terahertz diode structure 10 can be set to further comprise a first boss 120 and a second boss 130, the current input end of the die serial queue is connected with the first boss 120, the current output end of the die serial queue is connected with the second boss 130, and the first boss 120 and the second boss 130 are utilized to carry out heightening, so that the connecting piece 140 for connecting the schottky diode 110 in the die serial queue is kept on the same plane, the design and processing difficulty is reduced, and meanwhile, the electric signal transmission is facilitated; in addition, the die series queues between the first boss 120 and the second boss 130 are arranged in parallel.
When the terahertz diode structure 10 is set to be an axisymmetric structure, the first boss 120 and the second boss 130 are also axisymmetrically arranged, and when the terahertz diode structure 10 is set to be a centrosymmetric structure, the first boss 120 and the second boss 130 are also centrosymmetrically arranged.
To reduce design and manufacturing difficulties, schottky diodes 110 may be arranged in a straight line in a die series array.
In some embodiments, the schottky diodes 110 in one die series queue may also be arranged in a curved, broken line.
To reduce the design and manufacturing difficulty, the schottky diodes 110 may be equally spaced in a die series array.
In some embodiments, the schottky diodes 110 in one die series queue may be arranged in a gradually-changed pitch, specifically, the pitch may be gradually increased, the pitch may be gradually decreased, the pitch may be periodically increased, or the pitch may be periodically decreased, which is not limited herein.
Example 2:
the embodiment of the application provides a frequency multiplier, as shown in fig. 6, including an input waveguide 210, an output waveguide 250, and a terahertz diode structure 10 in embodiment 1, where the input waveguide 210, the terahertz diode structure 10, and the output waveguide 250 are connected in sequence by signal transmission; so as to improve the frequency multiplication efficiency of the frequency multiplier by using the terahertz diode structure.
The frequency multiplier may further include an input microstrip waveguide transition structure 220, an input matching microstrip, a filter 230, an output matching microstrip and an output microstrip waveguide transition structure 240, where the input waveguide 210, the input microstrip waveguide transition structure 220, the input matching microstrip, the filter 230, the terahertz diode structure 10, the output matching microstrip, the output microstrip waveguide transition structure 240, and the output waveguide 250 are sequentially in signal transmission connection, so as to form a terahertz odd harmonic balanced frequency tripler.
The input waveguide 210 may be configured to include a first standard waveguide 211 and a first reduced-height waveguide 212, the first standard waveguide 211 being used for signal standard input to the first reduced-height waveguide 212, the first reduced-height waveguide 212 being used for converting the fundamental wave from the TE10 mode to the quasi-TEM mode; the output waveguide 250 includes a second standard waveguide 252 and a second height-reducing waveguide 251, the second height-reducing waveguide 251 is used for converting the fundamental wave from the quasi-TEM mode to the TE10 mode, and the second standard waveguide 252 is used for outputting the output signal standard of the second height-reducing waveguide 251.
Specifically, the filter 230 may be set as a low-pass filter 230; preferably, the low-pass filter 230 is a compact microstrip resonance unit filter, and is composed of a plurality of i-shaped microstrips, and functions to prevent the third harmonic generated by the schottky diode 110 from leaking from the input terminal while passing the fundamental wave.
Specifically, the input matching microstrip is a multi-stage microstrip line, and is used for connecting the input microstrip waveguide transition structure 220, the filter 230 and the terahertz diode structure 10, so that the fundamental wave energy can be better converged into the schottky diode 110; preferably, the output matching microstrip is a multi-stage microstrip line for connecting the terahertz diode structure 10 and the output microstrip waveguide transition structure 240, so that the third harmonic energy generated by the schottky diode 110 can be better transmitted to the output terminal.
Specifically, the serial queue of the tube cores in the terahertz diode structure 10 is arranged in parallel with the suspension microstrip, and the suspension microstrip has the characteristics of small transmission loss, weak dispersion characteristic, wide frequency band range, large impedance range, good heat dissipation performance and the like, and the manufacturing tolerance requirement is not strict, so that the terahertz diode structure is a good choice for mixed and monolithic integrated circuits; the most remarkable characteristic of the schottky diode 110 is that the reverse recovery time is extremely short, which is especially suitable for high frequency application, and meanwhile, the nonlinear effect of the schottky diode 110 is utilized, when the fundamental wave enters the schottky diode 110 through the input waveguide 210, the schottky diode 110 can generate multiple harmonics, and the unnecessary higher harmonics generated by the schottky diode 110 are reflected through the output matching circuit, so that the third harmonic needed by us is obtained.
Specifically, the frequency multiplier adopts a substrate made of quartz, gallium arsenide, gallium nitride, aluminum nitride or silicon carbide material.
In some embodiments, the doping material in the schottky diode 110 may be GaN, gaAs, alGaN, inGaN, alGaAs/GaAs, inGaAs, or InP.
In some embodiments, schottky diode 110 may employ a planar varactor, a heterojunction barrier varactor, or a planar varactor.
Example 3:
the embodiment of the application provides a frequency multiplier, as shown in fig. 9, including an input waveguide 210, an output waveguide 250, and a terahertz diode structure 10 in embodiment 1, the frequency multiplier further includes an input microstrip waveguide transition structure 220, a filter 230, an output matching microstrip and an output microstrip waveguide transition structure 240, the terahertz diode structure 10 specifically includes an input matching microstrip 260, and a die series queue symmetrically disposed at two sides of the input matching microstrip 260, the other end of the die series queue is connected with a ground terminal 280, the input waveguide 210, the input microstrip waveguide transition structure 220, the terahertz diode structure 10, the output matching microstrip 270, the output microstrip waveguide transition structure 240, and the output waveguide 250 are sequentially connected in signal transmission, and the filter 230 is connected with the output microstrip waveguide transition structure 240 to form a balanced frequency multiplier.
Example 4:
an embodiment of the present application provides an electronic device including the terahertz diode structure 10 in embodiment 1, the frequency multiplier in embodiment 2, or the frequency multiplier in embodiment 3.
Test example 1:
comparing the balanced tripler (the single die series queue includes five schottky diodes 110) in example 2 with the conventional tripler, the balanced tripler is different from the balanced tripler, the anode pillars 111 of the schottky diodes 110 in the conventional tripler are all round in cross section, the test results are shown in fig. 1, 6, 7 and 8, fig. 6 shows a circuit schematic diagram of the balanced tripler, fig. 1 is a schematic diagram of the terahertz diode structure 10 in fig. 6, the terahertz diode structure 10 is a central symmetry structure, fig. 7 shows an electric field vector schematic diagram of the balanced tripler, fig. 8 shows a comparison graph of the frequency multiplication efficiency of the balanced tripler and the conventional tripler, and it can be seen from the graph that the uniformity between the schottky diodes 110 is improved based on improving the anode pillars 111 in the terahertz diode structure 10, thereby effectively reducing the influence of the phase difference between the ring-shaped electromagnetic waves of the conventional tripler, and improving the frequency multiplication efficiency of the tripler.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (10)
1. The terahertz diode structure is characterized by comprising two die series queues which are connected in parallel, wherein each die series queue comprises at least two Schottky diodes which are sequentially connected in series, the cross section of anode posts of the Schottky diodes is elliptical, and the cross section of the anode posts of the Schottky diodes is the same; along the signal transmission direction, in a tube core serial queue, a body position difference exists between at least two Schottky diodes, the K value between the Schottky diodes with the body position difference increases or decreases along the signal transmission direction, and the K value is the long axis value of the oval section of the anode column.
2. The terahertz diode structure of claim 1, wherein two die series queues are symmetrically arranged.
3. The terahertz diode structure of claim 1, wherein the terahertz diode structure is an axisymmetric structure or a centrosymmetric structure.
4. The terahertz diode structure of claim 3, further comprising a first boss, a second boss, the current input end of the die series queue being connected to the first boss, the current output end of the die series queue being connected to the second boss.
5. The terahertz diode structure of any one of claims 1 to 4, wherein the schottky diodes are arranged in a straight line in a die series array.
6. The terahertz diode structure of claim 5, wherein the schottky diodes are equally spaced in a die series array.
7. The frequency multiplier is characterized by comprising an input waveguide, an output waveguide and the terahertz diode structure according to any one of claims 1-6, wherein the input waveguide, the terahertz diode structure and the output waveguide are connected in sequence in a signal transmission manner.
8. The frequency multiplier of claim 7, further comprising an input microstrip waveguide transition structure, an input matching microstrip, a filter, an output matching microstrip, and an output microstrip waveguide transition structure, the input waveguide, the input microstrip waveguide transition structure, the input matching microstrip, the filter, the terahertz diode structure, the output matching microstrip, the output microstrip waveguide transition structure, and the output waveguide being in signal transmission connection in sequence.
9. The frequency multiplier of claim 8, wherein the input waveguides include first reduced height waveguides for converting fundamental waves from TE10 modes to quasi-TEM modes, and the output waveguides include second reduced height waveguides for converting fundamental waves from quasi-TEM modes to TE10 modes.
10. An electronic device comprising the terahertz diode structure of any one of claims 1 to 6 or the frequency multiplier of any one of claims 7 to 9.
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| CN202311534879.3A CN117276325B (en) | 2023-11-17 | 2023-11-17 | Terahertz diode structure, frequency multiplier and electronic equipment |
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| CN202311534879.3A CN117276325B (en) | 2023-11-17 | 2023-11-17 | Terahertz diode structure, frequency multiplier and electronic equipment |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104867968A (en) * | 2015-06-12 | 2015-08-26 | 四川迈格酷科技有限公司 | Terahertz low-frequency GaAs based high-power schottky frequency multiplication diode |
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| US7745845B2 (en) * | 2008-04-23 | 2010-06-29 | Fairchild Semiconductor Corporation | Integrated low leakage schottky diode |
| US9379231B2 (en) * | 2012-02-17 | 2016-06-28 | Infineon Technologies Americas Corp. | Transistor having increased breakdown voltage |
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