CN115051651A - Terahertz frequency doubling Schottky diode structure, frequency multiplier and electronic equipment - Google Patents
Terahertz frequency doubling Schottky diode structure, frequency multiplier and electronic equipment Download PDFInfo
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- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/16—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes
- H03B19/18—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes and elements comprising distributed inductance and capacitance
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Abstract
The invention relates to the technical field of electrical elements, in particular to a terahertz frequency doubling Schottky diode structure, a frequency multiplier and electronic equipment. According to the invention, by additionally arranging the tube core deviating from the first series queue, the output power of the diode structure is effectively improved, the power capacity and multiplication efficiency of the frequency multiplier are improved, and the technical effect of effectively improving the upper limit of the power capacity of the frequency multiplier on the premise of keeping the width of the substrate unchanged is achieved.
Description
Technical Field
The invention relates to the technical field of electrical elements, in particular to a terahertz frequency doubling schottky diode structure, a frequency multiplier and electronic equipment.
Background
Terahertz waves (THz), also known as Terahertz radiation, include electromagnetic waves having a frequency of 0.1THz to 10THz, corresponding to a wavelength range of 0.03mm to 3mm, which are higher in frequency than microwaves and lower in frequency than infrared rays; the energy magnitude is then between electrons and photons. The terahertz wave has the characteristics of high bandwidth, abundant carried information, high space-time coherence, good directionality and the like, and has very wide application and research values in various scientific fields such as national defense, homeland security, biomedical treatment, wireless communication and the like. The terahertz frequency source is a key factor for the development of the terahertz technology, and the performance index of the terahertz frequency source influences the performance of the whole terahertz system. The terahertz signal obtained by the frequency doubling mode has the advantages of good high-frequency stability, wide working frequency band and the like, so that the frequency doubler becomes a common scheme for obtaining the terahertz source.
The balanced frequency doubler is one of frequency multipliers, in the process of realizing the invention, the inventor finds that at least the following problems exist in the prior art, because the balanced frequency doubler adopts a one-line-shaped diode pair, on the basis of ensuring the frequency doubling efficiency, in order to increase the input power capacity of the balanced frequency doubler, the improvement of the diode is not considered, the input power capacity is increased by generally adopting a mode of increasing the number of tube cores, but the width of a substrate is limited, the width of the substrate is limited, the number of tube cores which can be installed on the substrate is also limited, and the input power capacity of the balanced frequency doubler is also limited by the width of the substrate, so that the input power capacity of the prior balanced frequency doubler is increased.
Disclosure of Invention
The utility model aims at providing a terahertz frequency doubling schottky diode structure and terahertz frequency doubler now solves the above-mentioned technical problem that exists among the prior art, mainly includes following scheme:
the utility model provides a terahertz frequency multiplication schottky diode structure now, including matching the microstrip, two symmetries set up the earthing terminal in matching microstrip axis both sides, and two symmetries set up the tandem unit in matching microstrip axis both sides, the tandem unit includes the first series connection queue of being connected with the matching microstrip, and the second series connection queue of being connected with the earthing terminal, contain the die of two at least series connection settings in the first series connection queue, contain the die of at least one series connection setting in the second series connection queue, the die in the first series connection queue and the die series connection in the second series connection queue, the extension line of connecting the line segment and the connecting line segment of die in the second series connection queue at least one die skew first series connection queue.
Further, the spacing between the die and the adjacent mounting side in the second series queue is the same; or, along the die serial direction, the distance between the die closest to the second serial queue in the first serial queue and the adjacent mounting side is X, the distance between the die in the second serial queue and the adjacent mounting side is Y, and the X and Y have the same value.
Further, when the number of the die in the second serial queue is larger than or equal to 2, the connecting line of the die in the second serial queue is a straight line or a broken line along the serial direction of the die.
Further, the dies in the second series of rows are wired parallel to the adjacent mounting side.
Further, along the die serial direction, the connection lines of the dies in the first serial queue are straight lines or broken lines.
Further, an included angle between the first series array and the central axis of the matching microstrip is an acute angle, an obtuse angle or 90 degrees.
Further, the angle between the first and second series of rows is acute, obtuse or 90 °.
Further, along the die serial direction, the connection lines of the dies in the second serial queue are straight lines or broken lines.
The application also provides a frequency multiplier, which comprises an input end waveguide, an output suspension microstrip circuit and the diode structure, wherein the input end waveguide, the diode structure, the output suspension microstrip circuit and the output end waveguide are sequentially connected.
The application also provides an electronic device comprising the diode structure or the frequency multiplier.
Compared with the prior art, the invention at least has the following technical effects:
according to the invention, by additionally arranging the tube cores deviated from the first series queue, the structure that only one tube core in the existing balanced frequency doubler is close to the installation side edge is changed into a structure that a plurality of tube cores are close to the installation side edge, the number of the tube cores arranged close to the installation side edge is increased, the output power of the diode structure is effectively improved, the power capacity of the frequency doubler is improved, the multiplication efficiency cannot be lost due to the increase of the number of the tube cores, and the technical effect of effectively improving the upper limit of the power capacity of the frequency doubler on the premise of not changing the width of the substrate is achieved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments of the present invention or in the description of the prior art will be briefly described below, and it is obvious that the drawings described below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a terahertz frequency doubling Schottky diode structure according to the present invention;
FIG. 2 is a schematic view of a first alternative configuration of the series unit of FIG. 1 according to the present invention;
FIG. 3 is a schematic diagram of a second alternative configuration of the series unit of FIG. 1 according to the present invention;
FIG. 4 is a schematic diagram of a third alternative configuration of the series unit of FIG. 1 according to the present invention;
FIG. 5 is a schematic diagram of a fourth alternative configuration of the series unit of FIG. 1 according to the present invention;
FIG. 6 is a schematic diagram of a fifth alternative configuration of the series unit of FIG. 1 according to the present invention;
FIG. 7 is a sixth alternative configuration of the series unit of FIG. 1 according to the present invention;
FIG. 8 is a seventh alternative configuration of the series unit of FIG. 1 according to the present invention;
FIG. 9 is a schematic structural diagram of a frequency doubler in accordance with embodiment 2;
FIG. 10 is a schematic view of the structure of the substrate of FIG. 8;
FIG. 11 is a graph comparing the efficiencies of two frequency doublers in example 2;
FIG. 12 is a schematic diagram showing the structure of the frequency tripler in embodiment 3;
FIG. 13 is a schematic view of the structure of the substrate of FIG. 12;
in the figure: 100. matching the microstrip; 200. a ground terminal; 300. a first series queue; 400. a second series queue; 500. a die; 610. a first input end waveguide; 620. a multi-level elevation-reducing waveguide structure; 630. a substrate; 631. a first output suspended microstrip circuit; 632. a first output microstrip-waveguide probe transition structure; 633. a first filter; 640. a first-level height-reducing waveguide structure; 650. a first output end waveguide; 710. a second input end waveguide; 720. a second input waveguide-microstrip probe transition structure; 730. a second filter; 740. a second output suspended microstrip circuit; 750. a second output microstrip-waveguide probe transition structure; 760. a second output end waveguide; 770. biasing the energized terminal.
Detailed Description
The following description provides many different embodiments, or examples, for implementing different features of the invention. The particular examples set forth below are illustrative only and are not intended to be limiting.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention. Thus, the following detailed description of the embodiments of the present invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
In the present invention, unless otherwise expressly stated or limited, the first feature may be present on or under the second feature in direct contact with the first and second feature, or may be present in the first and second feature not in direct contact but in contact with another feature between them. Also, the first feature being above, on or above the second feature includes the first feature being directly above and obliquely above the second feature, or merely means that the first feature is at a higher level than the second feature. A first feature that underlies, and underlies a second feature includes a first feature that is directly under and obliquely under a second feature, or simply means that the first feature is at a lesser level than the second feature.
Example 1:
the embodiment of the present application provides a terahertz frequency doubling schottky diode structure, as shown in fig. 1, including a matching microstrip 100, two ground terminals 200 symmetrically disposed on two sides of a central axis of the matching microstrip 100, and two series units symmetrically disposed on two sides of a central axis of the matching microstrip 100, where the series units include a first series queue 300 connected to the matching microstrip 100, and a second series queue 400 connected to the ground terminal 200, where the first series queue 300 includes at least two serially disposed die 500, the second series queue 400 includes at least one serially disposed die 500, and in the same series unit, from the matching microstrip 100 to the ground 200, the dies 500 in the first series arrangement 300 are connected in series with the dies 500 in the second series arrangement 400 in sequence, at least one die 500 in the second series arrangement 400 being offset from the connecting line segment of the dies 500 in the first series arrangement 300 and the extension of the connecting line segment.
In a diode structure of the existing frequency multiplier, the phase difference between the tube cores 500 can affect the power capacity and the frequency multiplication efficiency of the frequency multiplier, and in order to realize the high power capacity and the high frequency multiplication efficiency of terahertz frequency multiplication, the phase difference between the tube cores 500 in the diode structure of the frequency multiplier needs to be reduced as much as possible, because in the existing balanced frequency multiplier, the tube cores 500 are in a diode structure in a one-line arrangement, all the tube cores 500 are ensured to be in the same phase through the one-line arrangement, and the phase difference between the tube cores 500 is further controlled to be minimum, therefore, when the power capacity of the frequency multiplier needs to be increased, in order to reduce the negative influence caused by the increase of the phase difference, the input power capacity can be increased only by increasing the number of the tube cores 500 in the one-line arrangement; in addition, the width of the substrate 630 is limited, and the number of the dies 500 that can be mounted on the substrate 630 is limited by the width of the substrate 630, so that there is an upper limit to the improvement of power capacity by increasing the number of the dies 500 arranged in a straight line; in the embodiment, by changing the arrangement structure of the die 500, the die 500 in the first serial queue 300 is arranged in a "one" shape, the second serial queue 400 is additionally arranged at the end of the first serial queue 300 far from the matching microstrip 100, and at least one die 500 in the second serial queue 400 is offset from the connection line segment and the extension line of the connection line segment of the die 500 in the first serial queue 300, so that when the diode structure is installed in the frequency multiplier, compared with the situation that only one die 500 is close to the installation side in the existing balanced frequency multiplier, at least two or more die 500 are close to the installation side, although the die 500 offset from the connection line segment and the extension line of the die 500 in the first serial queue 300 can increase the phase difference between the die 500, the offset die 500 substantially increases the gains in both the power capacity and the multiplication efficiency of the diode structure, and the gains can not only counteract the negative effects caused by the increase of the phase difference, the power capacity can be increased, the diode structure and the corresponding frequency multiplier can not lose the multiplication efficiency due to the increase of the number of the tube cores 500, the technical effect of effectively improving the upper limit of the power capacity of the frequency multiplier on the premise that the width of the substrate 630 is not changed is achieved, and the diode structure has higher power capacity and multiplication efficiency compared with the diode structure in the existing balanced frequency multiplier when the number of the tube cores 500 is the same.
In addition, when the diode structure is installed and applied to a frequency multiplier, at least one die 500 in the second series queue 400 is offset from the connecting line segment and the extension line of the connecting line segment of the die 500 in the first series queue 300, so that at least one die 500 in the second series queue 400 is in a leading position or a lagging position relative to the first series queue 300, the die 500 in the second series queue 400 can be coupled with the die 500 in the first series queue 300, input power energy can be better absorbed by the diode die 500, the feed-in and output consistency of the die 500 is improved, and the conversion efficiency, the bandwidth and the output power of the frequency multiplier are further improved.
Specifically, the dies 500 in the second series queue 400 are spaced the same distance from the adjacent mounting side; alternatively, along the die 500 serial direction, the die 500 closest to the second serial queue 400 in the first serial queue 300 is spaced from the adjacent mounting side by X, the die 500 in the second serial queue 400 is spaced from the adjacent mounting side by Y, and the values of X and Y are the same. By setting the spacing between the die 500 and the adjacent mounting side in the second series queue 400 to be the same, it is ensured that when the diode structure is applied to a frequency multiplier, the power capacity of the frequency multiplier can be increased along with the increase of the number of the die 500 in the second series queue 400 without losing multiplication efficiency as the number of the die 500 near the waveguide wall is increased; when the mounting side is a straight line, the cores 500 in the second series array 400 are also arranged in a straight line parallel to the mounting side, and when the mounting side is a curved line, the cores 500 in the second series array 400 are also arranged in a curved line parallel to the mounting side
It should be noted that the mounting side may be an interface between a plane of the diode structure and the corresponding waveguide wall, an interface between a plane of the diode structure mounting substrate 630 and the corresponding waveguide wall, or a side of the diode structure mounting substrate 630, which is not specifically limited herein.
Specifically, in one diode structure, the total number of the die 500 is N, and N is an even number not less than 6, so that the die 500 can be symmetrically arranged on two sides of the central axis of the matching microstrip 100 by taking the central axis of the matching microstrip 100 as a symmetry axis; in some embodiments, as shown in fig. 3, the total number of the dies 500 in the serial unit is 3, the total number of the dies 500 in the diode structure is 6, along the serial direction of the dies 500, one die 500 close to the mounting side is provided in the second serial queue 400 and is a 3-bit, two dies 500 are provided in the first serial queue 300, which are sequentially a 2-bit die and a 1-bit die 500, the connecting line of the 1-bit die 500 and the 2-bit die 500 is perpendicular to the connecting line of the 2-bit die 500 and the 3-bit die 500, and the extension line of the connecting line segment of the 1-bit die 500 and the 2-bit die 500 is the extension line of the first serial queue 300.
Specifically, along the die 500 serial direction, the dies 500 in the first serial queue 300 are equally spaced.
Specifically, the dies 500 in the second series queue 400 are equally spaced along the die 500 series direction.
Preferably, the die 500 are equally spaced in the series unit along the direction in which the die 500 are connected in series.
Specifically, when the number of dies 500 in the second in-line queue 400 is two or more, the connection lines of the dies 500 in the second in-line queue 400 are straight lines or broken lines along the in-line direction of the dies 500. For convenience of processing and manufacturing, the effect of enhancing the power capacity of the cores 500 in the second serial queue 400 is enhanced, preferably, the cores 500 in the second serial queue 400 are arranged linearly, and the cores 500 in the second serial queue 400 can be uniformly and equidistantly arranged near the waveguide wall of the frequency multiplier, so that the phase difference between the cores 500 is reduced, and the upper limit of the power capacity is prevented from being saturated in advance along with the increase of the number of the cores 500.
In some embodiments, as shown in fig. 4, the dies 500 in the second in-line queue 400 are staggered along the die 500 in the in-line direction, and the staggered dies 500 may be arranged to fit the waveguide walls such that the spacing between the dies 500 and the waveguide walls is the same; the dies 500 arranged in the zigzag staggered manner can also place more dies 500 on the substrate 630 with limited space in order to mount more dies 500 on the substrate 630 better, so as to achieve maximum improvement of power capacity under effective mounting space.
Specifically, the cores 500 in the second in-line queue 400 are wired parallel to adjacent mounting sides. By having the connection lines of the die 500 in the second series queue 400 parallel to the adjacent mounting sides, the phase difference between the die 500 in the second series queue 400 is minimized, the coupling effect of the die 500 of the second series queue 400 and the first series queue 300 is stronger, and better gain for the power capacity and multiplication efficiency of the diode structure is ensured.
Specifically, along the die 500 serial direction, the connection lines of the dies 500 in the first serial queue 300 are straight lines or broken lines. Preferably, the dies 500 in the first series queue 300 are arranged in a straight line, and the phase difference between the dies 500 in the first series queue 300 is reduced by arranging the dies 500 in the first series queue 300 in a straight line.
Specifically, the angle between the first serial alignment 300 and the central axis of the matching microstrip 100 is acute, obtuse, or 90 °. The included angle between the first serial queue 300 and the matching microstrip 100 is preferably set to be 90 °, so that the dies 500 of the two first serial queues 300 are arranged on the same straight line in the serial unit, the dies 500 in the first serial queues 300 are ensured to be in the same phase, the phase difference between the dies 500 is reduced, and the power capacity and the multiplication efficiency of the diode structure are improved.
In some embodiments, as shown in fig. 7, the second serial queue 400 is disposed parallel to the mounting side, and the included angle between the first serial queue 300 and the matching microstrip 100 may be disposed at an acute angle or an obtuse angle; in some embodiments, as shown in fig. 8, the angle between the first series of queues 300 and the matching microstrip 100 is set to 90 °, and the angle between the second series of queues 400 and the first series of queues 300 is set to an acute or obtuse angle.
Specifically, the angle between the first and second in- line queues 300 and 400 is acute, obtuse, or 90 °. Preferably, the included angle between the first serial queue 300 and the second serial queue 400 is 90 °, the dies in the first serial queue 300 and the second serial queue 400 are arranged in an "L" shape, and by additionally arranging the die 500 (the second serial queue 400) on the front side (as shown in fig. 1) or the rear side (as shown in fig. 2) of the first serial queue 300, the additionally arranged dies 500 are close to the mounting side, and the input and output power of the die 500 close to the mounting side is stronger than that of the die 500 close to the matching microstrip 100, so that the input power capacity is effectively increased, and the added die 500 does not lose energy or additionally increase the width of the substrate 630, and the output power of the diode structure is effectively increased by matching the forward coupling effect of the die 500 between the first serial queue 300 and the second serial queue 400. When there is only one die 500 in the second series queue 400, the dies in the first series queue 300 and the second series queue 400 are preferably arranged in an "L" shape.
In some embodiments, as shown in fig. 5, to achieve the improvement of the output power of the diode structure, the first series queue 300 and the second series queue 400 may be arranged in a "T" type arrangement, such that the second series queue 400 is located at the upper end of the first series queue 300; in some embodiments, as shown in fig. 6, the second series queue 400 may also be disposed at a middle, middle-upper position of the front side or the rear side of the first series queue 300, so that the first series queue 300 and the second series queue 400 are disposed in a side-down "T" arrangement.
Specifically, the diode doping material in the diode structure is GaN, GaAs, AlGaN, InGaN, AlGaAs/GaAs, InGaAs or InP.
Specifically, the diode in the diode structure is a planar varactor, a heterojunction barrier varactor, or a planar varistor.
Example 2:
the present embodiment provides a frequency doubler, as shown in fig. 9 and 10, including a first input end waveguide 610, a first output end waveguide 650, a first output suspended microstrip circuit 631, and the diode structure in embodiment 1, where the first input end waveguide 610, the diode structure, the first output suspended microstrip circuit 631, and the first output end waveguide 650 are connected in sequence.
Because the frequency doubler belongs to a balanced structure, the structure can not generate third harmonic, so that a filter circuit of the third harmonic is not required to be designed, and the transmission loss in the frequency doubler is favorably reduced; in addition, compared with the structure of the conventional balanced frequency doubler, in the embodiment, the frequency doubler is additionally provided with the second serial queue 400, the number of the dies 500 close to the waveguide wall is added, and the forward coupling effect of the second serial queue 400 and the first serial queue 300 is matched, so that the width of the substrate 630 is not additionally increased, and the frequency doubling efficiency and the power capacity can be effectively improved; during the operation of the frequency doubler, the fundamental wave is fed from the first input end waveguide 610, and reaches the schottky diode die 500 after passing through the multi-level height-reduced waveguide structure 620 which is beneficial to the absorption of electromagnetic waves by schottky diodes, at this time, the fundamental wave is absorbed by the diode in the mode of the propagation main mode TE10, so as to generate the second harmonic in the quasi-TEM mode suitable for the transmission of the first output suspended microstrip circuit 631, the second harmonic is transmitted to the first output microstrip-waveguide probe transition structure 632 by the symmetrical first output suspended microstrip circuit 631, and then the signal in the mode of TE10 suitable for the waveguide transmission is generated through the probe coupling effect, and reaches the first output end waveguide 650 through the output first level height-reduced waveguide structure 640, and is output by the first output end waveguide 650, so as to achieve the frequency doubling efficiency of up to 40% and above.
Specifically, the frequency doubler further includes a first output microstrip-waveguide probe transition structure 632, and the first output suspended microstrip circuit 631 is connected to the first output end waveguide 650 through the first output microstrip-waveguide probe transition structure 632. The first output microstrip-waveguide probe transition structure 632 refers to a circuit for transmitting harmonic signals generated by a frequency doubling circuit, a first filter 633 feed circuit and a probe transition circuit, and the probe is used for converting an electromagnetic wave transmission mode.
Specifically, the frequency doubler further comprises a first filter 633, and the first filter 633 is used for preventing second harmonic leakage. Preferably, the first filter 633 is a high-low impedance filter or a CMRC filter.
Specifically, the mounting manner of the diode in the diode structure is a flip-chip diode, a discrete diode and a monolithic diode.
Specifically, the first input end waveguide 610 and the first output end waveguide 650 are rectangular waveguides, respectively.
Specifically, the cavity walls of the first input end waveguide 610 and the first output end waveguide 650 are made of a metal material. Preferably, the metallic material is oxygen-free copper, brass or aluminum.
Specifically, the substrate 630 used in the frequency doubler is quartz, gallium arsenide, gallium nitride, aluminum nitride or silicon carbide material.
Based on HFSS software, terahertz frequency doubling simulation test is performed on the frequency doubler and the balanced frequency doubler of the present embodiment, as shown in fig. 10, in the frequency doubler of the present embodiment, the first series queue 300 is provided with 3 dies 500, the second series queue is provided with 2 dies 500, the total number of the dies is 10, an included angle between the first series queue 300 and the second series queue 400 is 90 °, the dies 500 of the diode structure in the balanced frequency doubler are arranged in a straight line shape, the total number of the dies 500 is 8, and the other structural parameters of the two frequency doublers are the same; the simulation test structure is shown in fig. 11, the frequency doubler of the present embodiment increases the power capacity by adding a pair of dies 500 at a 90 ° corner of the diode near the waveguide wall, the method does not increase the width of the substrate 630 additionally, and the newly added dies 500 are matched with the original dies 500 to generate a coupling effect, so that energy can be better fed into the schottky diode, the frequency doubling efficiency is not reduced, but increased, and the bandwidth is also improved.
Example 3:
the embodiment of the present application provides a frequency tripler, as shown in fig. 12 and 13, including a second input end waveguide 710, a second output end waveguide 760, a second input waveguide-microstrip probe transition structure 720, a second filter 730, a bias power application end 770, a second output suspension microstrip circuit 740, a second output microstrip-waveguide probe transition structure 750, and a diode structure in embodiment 1, where the second input end waveguide 710, the second input waveguide-microstrip probe transition structure 720, the second filter 730, the diode structure, the second output suspension microstrip circuit 740, the second output microstrip-waveguide probe transition structure 750, and the second output end waveguide 760 are connected, and the bias power application end 770 is connected to the diode structure; the frequency tripler provided by the embodiment is of an unbalanced structure, that is, the transmission line modes before and after the diode are the same and are both in a quasi-TEM mode; the fundamental wave is fed in from the second input end waveguide 710, the transmission mode is converted from the waveguide master mode TE10 mode to the suspended microstrip master mode TEM mode through the second input waveguide-microstrip probe transition structure 720, and then passes through the second filter 730 (to prevent the third harmonic signal generated by the subsequent nonlinear change from leaking from the input port and causing the efficiency loss), the diode structure (in this embodiment, the total core number is 12, the first series queue is 3 dies, the second series queue is 3 dies, and the series unit is in the diode structure of the L-shaped structure), and finally the fundamental wave is transmitted from the second output suspended microstrip circuit 740 to the second output microstrip-waveguide probe transition structure 750, and is converted again into the waveguide master mode TE10 mode to be output, and is output from the second output end waveguide 760; during actual assembly, the bias charging terminal 770 is externally connected to the 5880 type substrate by a gold wire bonding method for feeding a direct current.
Example 4:
the present application further provides an electronic device, which includes the diode structure in embodiment 1, the frequency doubler in embodiment 2, or the frequency tripler in embodiment 3.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. The utility model provides a terahertz doubling of frequency schottky diode structure now, including matching the microstrip, two symmetries set up the earthing terminal in matching microstrip axis both sides, and two symmetries set up the series unit in matching microstrip axis both sides, a serial unit includes the first series connection queue of being connected with matching the microstrip, and the second series connection queue of being connected with the earthing terminal, contain the die of two at least series connection settings in the first series connection queue, contain the die of at least one series connection setting in the second series connection queue, the die in the first series connection queue and the die series connection in the second series connection queue, at least one die deviates from the line segment of connecting of die and the extension line of line segment in the first series connection queue in the second series connection queue.
2. The diode structure of claim 1 wherein the dies in the second series alignment are spaced the same distance from the adjacent mounting side; or, along the die serial direction, the distance between the die closest to the second serial queue in the first serial queue and the adjacent mounting side is X, the distance between the die in the second serial queue and the adjacent mounting side is Y, and the X and Y have the same value.
3. The diode structure of claim 1 or 2, wherein when the number of the dies in the second series queue is greater than or equal to 2, the connection lines of the dies in the second series queue are straight lines or broken lines along the die series direction.
4. A diode structure as claimed in claim 3 wherein the dies in the second series arrangement are wired parallel to the adjacent mounting side.
5. A diode structure as claimed in claim 1 or 2, characterized in that the connection lines of the dies in the first series queue in the die series direction are straight lines or meander lines.
6. A diode structure according to claim 5 wherein the angle between the first series alignment and the central axis of the matching microstrip is acute, obtuse or 90 °.
7. The diode structure of claim 6, wherein the angle between the first series of rows and the second series of rows is acute, obtuse, or 90 °.
8. The diode structure of claim 7, wherein when the number of the dies in the second series queue is greater than or equal to 2, the connection lines of the dies in the second series queue are straight lines or broken lines along the die series direction.
9. A frequency multiplier is characterized by comprising an input end waveguide, an output suspension microstrip circuit, an output microstrip-waveguide probe transition structure and the diode structure of any one of claims 1 to 8, wherein the input end waveguide, the diode structure, the output suspension microstrip circuit, the output microstrip-waveguide probe transition structure and the output end waveguide are sequentially connected.
10. An electronic device comprising a diode structure according to any one of claims 1 to 8 or a frequency multiplier according to claim 9.
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| CN115051651B (en) | 2022-11-01 |
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