CN106160668A - The Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit - Google Patents
The Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit Download PDFInfo
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- CN106160668A CN106160668A CN201610608455.0A CN201610608455A CN106160668A CN 106160668 A CN106160668 A CN 106160668A CN 201610608455 A CN201610608455 A CN 201610608455A CN 106160668 A CN106160668 A CN 106160668A
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- frequency
- terahertz
- microstrip line
- radio
- quartz
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a kind of Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit, relate to Terahertz circuit engineering field.Described circuit includes radio frequency input waveguide, quartz base plate and radio frequency output waveguide, the anode of the multitube knot GaAs Terahertz frequency doubled diode that negative electrode is connected with radio-frequency match microstrip line and a direct current biasing end quartz band line connect, each direct current biasing end quartz passes through a spun gold wire jumper with line and one end of an electric capacity connects, and the other end of electric capacity is connected with the same input microstrip line being integrated with low pass filter by spun gold wire jumper.Described circuit structure is simple, due to increasing of Schottky diode number, can bear bigger input power, and 4 multitube knot GaAs Terahertz frequency doubled diode constitute class balanced type frequency multiplication form so that circuit work is more stable.
Description
Technical field
The present invention relates to Terahertz circuit engineering field, particularly relate to a kind of Terahertz of resistance to power frequency tripling class balanced type times
Frequency circuit.
Background technology
Terahertz (THz) ripple in a larger sense, refers to electromagnetic wave in the range of 0.1-10THz for the frequency, wherein
1THz=1000GHz, also it is believed that Terahertz frequency refer to 0.3THz-3THz in the range of electromagnetic wave.THz ripple is at electromagnetic wave
Occupying very special position in frequency spectrum, THz technology is the very important intersection Disciplinary Frontiers that International Technology circle is generally acknowledged.
In the systems such as Terahertz communication, measurement, source is most important.Miniaturization at present, the solid-state Terahertz times of low cost
Frequently technology is the hot issue studied in the world, mainly uses GaAs base plane Schottky diode as frequency doubling non-linear's device
Part, the power in order to realize Terahertz frequency range exports.It is a kind of for carrying out expansion based on solid-state electronic technology to Terahertz frequency source
Effective manner.In the evolution of circuit engineering, secondary frequency multiplication technology is high due to its shg efficiency, has obtained sending out widely
Exhibition.
After 2000, the development about solid-state frequency doubling technology is very fast, mainly has neutrodyne circuit and unbalanced electricity
Line structure.Two kinds of circuit all can put forward high-power bearing capacity by increasing the number of Schottky diode.Neutrodyne circuit by
Can effectively suppress unwanted even or odd frequency in it, receive relatively broad concern.Low side at Terahertz
Frequency, owing to the power amplifier technology of Ka wave band is more ripe, therefore use obtains by way of three frequencys multiplication from Ka wave band more
The technology application being related to the source of Terahertz low side.
At present through in commonly used No. three frequency multiplier circuits, typically all Schottky diode is fabricated in manufacturing process
It is applicable to the diode of No. three frequency multiplier circuit forms, general only 4 knots or 6 knots, having of each Schottky diode junction
Effect bears power at about 20mW, therefore limits input power and promotes further, causes power output can not continue to increase.Greatly
Power output there is more wide application future, if multiple diodes can be used simultaneously, then can obtain bigger
Power exports, it is therefore desirable to develop a kind of new trebling circuit form.
Content of the invention
The technical problem to be solved is to provide a kind of Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit,
Described circuit structure is simple, due to increasing of Schottky diode number, can bear bigger input power, and 4 multitube knots
GaAs Terahertz frequency doubled diode constitutes class balanced type frequency multiplication form.
For solving above-mentioned technical problem, the technical solution used in the present invention is: a kind of Terahertz of resistance to power frequency tripling class
Balanced type frequency multiplier circuit, it is characterised in that: include radio frequency input waveguide, quartz base plate and radio frequency output waveguide, described quartz base
One end of plate is positioned at the waveguide slot of described radio frequency input waveguide, and the other end of described quartz base plate is positioned at described radio frequency output wave
In the waveguide slot led, input transition microstrip line is positioned on described quartz base plate, and one end of described transition microstrip line is successively through first
Transmission microstrip line, low pass filter, radio-frequency match microstrip line, the second transmission microstrip line are connected with output transition microstrip line, each
Multitube knot GaAs Terahertz frequency doubled diode includes four Schottky diodes being connected in series, and two of which multitube knot GaAs is too
The anode of hertz frequency doubled diode is connected with radio-frequency match microstrip line, two other multitube knot GaAs Terahertz frequency doubled diode
Negative electrode is connected with radio-frequency match microstrip line, the multitube knot GaAs Terahertz frequency doubled diode that anode is connected with radio-frequency match microstrip line
Negative electrode and earth terminal quartz band line connect, GaAs Terahertz frequency multiplication tied by the multitube that negative electrode is connected with radio-frequency match microstrip line
The anode of diode and a direct current biasing end quartz band line connect, and each direct current biasing end quartz band line is jumped by a spun gold
One end of line and an electric capacity connects, and the other end of electric capacity is by spun gold wire jumper and the same input being integrated with low pass filter
Microstrip line connects.
Preferably, described input transition microstrip line is E face probe input transition microstrip line.
Preferably, described low pass filter is 5 rank or 7 rank height impedance micro-strip.
Preferably, the two ends of described multitube knot GaAs Terahertz frequency doubled diode are micro-with radio-frequency match respectively by conducting resinl
Band line, earth terminal quartz band line and direct current biasing end quartz band line connect.
Preferably, described earth terminal quartz band line is grounded with cavity by conducting resinl.
Preferably, the thickness of described quartz base plate is 30 microns to 75 microns.
Preferably, described radio frequency input waveguide is WR28 rectangular waveguide.
Preferably, four multitube knot GaAs Terahertz frequency doubled diode are that Saint Andrew's cross shape is fixing on a quartz substrate.
Use and have the beneficial effects that produced by technique scheme: the simple in construction of described circuit；Due to Xiao using
The number of special based diode increases, and can bear bigger input power；Four multitube knot GaAs Terahertz frequency doubled diode structures
Become class balanced type frequency multiplication form, and arrange in Saint Andrew's cross shape, it is possible to achieve preferably ground connection and introducing direct current biasing.
Brief description
Fig. 1 is the structural representation of circuit described in the embodiment of the present invention；
Wherein: the 101st, radio frequency input waveguide the 102nd, quartz base plate the 103rd, radio frequency output waveguide the 104th, input transition microstrip line the 105th,
It is micro-that the 109th, one transmission microstrip line the 106th, low pass filter the 107th, radio-frequency match microstrip line the 108th, the second transmission microstrip line exports transition
Band line the 110th, multitube knot GaAs Terahertz frequency doubled diode the 111st, earth terminal quartz band line the 112nd, direct current biasing end quartz band line
113rd, the 115th, spun gold wire jumper the 114th, electric capacity be integrated with the input microstrip line of low pass filter.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground describes, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.Based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
Elaborate a lot of detail in the following description in order to fully understand the present invention, but the present invention is all right
Using other to be different from alternate manner described here to implement, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by following public specific embodiment.
As it is shown in figure 1, the embodiment of the invention discloses a kind of Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit, bag
Including radio frequency input waveguide the 101st, quartz base plate 102 and radio frequency output waveguide 103, one end of described quartz base plate 102 is positioned at described
In the waveguide slot of radio frequency input waveguide 101, the other end of described quartz base plate 102 is positioned at the ripple of described radio frequency output waveguide 103
In guide groove, wherein radiofrequency signal inputs through described radio frequency input waveguide 101, and the signal after frequency multiplication is defeated through radio frequency output waveguide
Go out.
Input transition microstrip line 104 is positioned on described quartz base plate 102, one end warp successively of described transition microstrip line 104
First transmission microstrip line the 105th, low pass filter the 106th, radio-frequency match microstrip line the 107th, the second transmission microstrip line 108 and output transition
Microstrip line 109 connects.It is pointed out that the first transmission microstrip line the 105th, low pass filter the 106th, radio-frequency match microstrip line the 107th,
Second transmission microstrip line 108 and output transition microstrip line 109 are similarly positioned on described quartz base plate 102, and described input transition is micro-
On the quartz base plate above the waveguide slot being positioned at described radio frequency input waveguide 101 with line 104 entirety, described output transition micro-strip
On quartz base plate above the waveguide slot being positioned at described radio frequency output waveguide 103 of line 109 entirety.
Each multitube knot GaAs Terahertz frequency doubled diode 110 includes four discrete Schottky diodes being connected in series,
The anode of two of which multitube knot GaAs Terahertz frequency doubled diode 110 is connected with radio-frequency match microstrip line 107, and two other are many
The negative electrode of pipe knot GaAs Terahertz frequency doubled diode 110 is connected with radio-frequency match microstrip line 107, anode and radio-frequency match microstrip line
The negative electrode of the multitube knot GaAs Terahertz frequency doubled diode 110 that 107 connect and an earth terminal quartz band line 111 connect；Negative electrode
The anode of the multitube knot GaAs Terahertz frequency doubled diode 110 being connected with radio-frequency match microstrip line 107 and a direct current biasing end
Quartz band line 112 connects；Each direct current biasing end quartz passes through the one of a spun gold wire jumper 113 and an electric capacity 114 with line 112
End connects, and the other end of electric capacity 114 is by spun gold wire jumper 113 and the same input microstrip line 115 being integrated with low pass filter
Connect.
It is pointed out that described multitube knot GaAs Terahertz frequency doubled diode 110 two ends by conducting resinl respectively with
Radio-frequency match microstrip line the 107th, earth terminal quartz band line 111 and direct current biasing end quartz band line 112 connect, described earth terminal stone
English band line 111 is grounded with cavity by conducting resinl.
In order to better illustrate the present invention, with 36GHz input, 108GHz is as concrete to the present invention as a example by output frequency
Embodiment is illustrated.
Radio frequency input waveguide 101(is WR-28 rectangular waveguide herein) introduce 36GHz radiofrequency signal, input transition microstrip line
104 radiofrequency signals are incorporated into quartz circuit from waveguide and are transmitted, and low pass filter can be 5 rank or 7 rank height Low ESRs
Microstrip line, the effect of low pass filter is that transmission maximum for the radiofrequency signal of input to multitube is tied GaAs Terahertz frequency multiplication two pole
At pipe 110, stop 3 subharmonic (108GHz) of radiofrequency signal to feed back to input, the effect of radio-frequency match microstrip line 107 simultaneously
It is by input radio frequency signal impedance with the impedance of multitube knot GaAs Terahertz frequency doubled diode 110 carries out impedance matching, so that
In radiofrequency signal maximum feed-in multitube knot GaAs Terahertz frequency doubled diode 110.GaAs Terahertz frequency multiplication two tied by multitube
Pole pipe 110 is reverse parallel connection to radio-frequency input signals, is series aiding connection to RF output end.Electric capacity 114 is welded on cavity and (places
The cavity of described frequency multiplier circuit) on surface.By direct current biasing end, direct current biasing can be introduced.Concrete direct current biasing, permissible
Use sub-miniature A connector to connect one section of input microstrip line 115 being integrated with low pass filter, be integrated with the input micro-strip of low pass filter
Line 115 requirement can filter input fundamental frequency, and is connected with electric capacity 114, and direct current biasing introduces Schottky diode the most at last
In.Earth terminal quartz band line 111 realizes good earth by conducting resinl and cavity.Schottky diode uses the work of face-down bonding
Skill.
As shown in Figure 1,4 multitube knot GaAs Terahertz frequency doubled diode 110 are welded into Saint Andrew's cross version.All
The length and width of microstrip line needs to calculate, and the design of waveguide slot is also required to calculate, and meets the related of frequency multiplier
Require.The thickness of quartz base plate 102 is generally 30 to 75 microns.
The simple in construction of described circuit；The number of the Schottky diode owing to using increases, and can bear bigger defeated
Enter power；Four multitube knot GaAs Terahertz frequency doubled diode constitute class balanced type frequency multiplication form, and arrange in Saint Andrew's cross shape, can
To realize preferably ground connection and introducing direct current biasing.
Claims (8)
1. the Terahertz of a resistance to power frequency tripling class balanced type frequency multiplier circuit, it is characterised in that: include radio frequency input waveguide
(101), quartz base plate (102) and radio frequency output waveguide (103), it is defeated that one end of described quartz base plate (102) is positioned at described radio frequency
Entering in the waveguide slot of waveguide (101), the other end of described quartz base plate (102) is positioned at the ripple of described radio frequency output waveguide (103)
In guide groove, input transition microstrip line (104) is positioned on described quartz base plate (102), and one end of described transition microstrip line (104) depends on
Secondary through the first transmission microstrip line (105), low pass filter (106), radio-frequency match microstrip line (107), the second transmission microstrip line
(108) being connected with output transition microstrip line (109), each multitube knot GaAs Terahertz frequency doubled diode (110) includes four strings
The Schottky diode that connection connects, the anode of two of which multitube knot GaAs Terahertz frequency doubled diode (110) and radio-frequency match
Microstrip line (107) connects, the negative electrode of two other multitube knot GaAs Terahertz frequency doubled diode (110) and radio-frequency match microstrip line
(107) connect, the moon of multitube knot GaAs Terahertz frequency doubled diode (110) that anode is connected with radio-frequency match microstrip line (107)
Pole is connected with earth terminal quartz band line (111), the multitube knot GaAs terahertz that negative electrode is connected with radio-frequency match microstrip line (107)
Hereby anode and direct current biasing end quartz band line (112) of frequency doubled diode (110) connects, each direct current biasing end quartz band
Line (112) is connected with one end of an electric capacity (114) by a spun gold wire jumper (113), and the other end of electric capacity (114) is by gold
Silk wire jumper (113) is connected with the same input microstrip line (115) being integrated with low pass filter.
2. the Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit as claimed in claim 1, it is characterised in that: described input
Transition microstrip line (103) is E face probe input transition microstrip line.
3. the Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit as claimed in claim 1, it is characterised in that: described low pass
Wave filter (106) is 5 rank or 7 rank height impedance micro-strip.
4. the Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit as claimed in claim 1, it is characterised in that: described multitube
Knot GaAs Terahertz frequency doubled diode (110) two ends by conducting resinl respectively with radio-frequency match microstrip line (107), earth terminal stone
English band line (111) and direct current biasing end quartz band line (112) connect.
5. the Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit as claimed in claim 1, it is characterised in that: described ground connection
End quartz band line (111) is grounded with cavity by conducting resinl.
6. the Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit as claimed in claim 1, it is characterised in that: described quartz
The thickness of substrate (102) is 30 microns to 75 microns.
7. the Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit as claimed in claim 1, it is characterised in that: described radio frequency
Input waveguide (101) is WR-28 rectangular waveguide.
8. the Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit as claimed in claim 1, it is characterised in that: four multitubes
Knot GaAs Terahertz frequency doubled diode (110) is fixed on a quartz substrate in Saint Andrew's cross shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610608455.0A CN106160668B (en) | 2016-07-29 | 2016-07-29 | Power-resistant terahertz frequency-tripling type balance frequency doubling circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610608455.0A CN106160668B (en) | 2016-07-29 | 2016-07-29 | Power-resistant terahertz frequency-tripling type balance frequency doubling circuit |
Publications (2)
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| CN106160668A true CN106160668A (en) | 2016-11-23 |
| CN106160668B CN106160668B (en) | 2023-05-30 |
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| CN201610608455.0A Active CN106160668B (en) | 2016-07-29 | 2016-07-29 | Power-resistant terahertz frequency-tripling type balance frequency doubling circuit |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109412535A (en) * | 2018-12-11 | 2019-03-01 | 四川众为创通科技有限公司 | A kind of efficient 170GHz frequency tripler |
| CN109951158A (en) * | 2019-04-10 | 2019-06-28 | 嘉兴腓特烈太赫科技有限公司 | The method for screening 6 pipe unbalanced Terahertz varactor doublers based on DC detecting |
| CN110729968A (en) * | 2019-09-05 | 2020-01-24 | 中国电子科技集团公司第十三研究所 | Terahertz frequency multiplier |
| CN111313135A (en) * | 2018-12-12 | 2020-06-19 | 富华科精密工业（深圳）有限公司 | Microstrip line structure, radio frequency connector comprising microstrip line structure and communication equipment |
| CN111384897A (en) * | 2020-02-21 | 2020-07-07 | 东南大学 | Terahertz two-stage cascade balanced type frequency-nine multiplier circuit |
| CN111682848A (en) * | 2020-06-24 | 2020-09-18 | 电子科技大学 | Terahertz frequency tripler based on CMOS (complementary Metal oxide semiconductor) process |
| CN115051651A (en) * | 2022-08-11 | 2022-09-13 | 壹新信通科技(成都)有限公司 | Terahertz frequency doubling Schottky diode structure, frequency multiplier and electronic equipment |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109412535A (en) * | 2018-12-11 | 2019-03-01 | 四川众为创通科技有限公司 | A kind of efficient 170GHz frequency tripler |
| CN111313135A (en) * | 2018-12-12 | 2020-06-19 | 富华科精密工业（深圳）有限公司 | Microstrip line structure, radio frequency connector comprising microstrip line structure and communication equipment |
| CN109951158A (en) * | 2019-04-10 | 2019-06-28 | 嘉兴腓特烈太赫科技有限公司 | The method for screening 6 pipe unbalanced Terahertz varactor doublers based on DC detecting |
| CN109951158B (en) * | 2019-04-10 | 2023-01-06 | 江苏心磁超导体有限公司 | Method for screening 6-tube unbalanced terahertz frequency doubler based on direct current detection |
| CN110729968A (en) * | 2019-09-05 | 2020-01-24 | 中国电子科技集团公司第十三研究所 | Terahertz frequency multiplier |
| CN110729968B (en) * | 2019-09-05 | 2023-11-07 | 中国电子科技集团公司第十三研究所 | Terahertz frequency multiplier |
| CN111384897A (en) * | 2020-02-21 | 2020-07-07 | 东南大学 | Terahertz two-stage cascade balanced type frequency-nine multiplier circuit |
| CN111384897B (en) * | 2020-02-21 | 2023-01-31 | 东南大学 | Terahertz two-stage cascade balanced type frequency-nine multiplier circuit |
| CN111682848A (en) * | 2020-06-24 | 2020-09-18 | 电子科技大学 | Terahertz frequency tripler based on CMOS (complementary Metal oxide semiconductor) process |
| CN111682848B (en) * | 2020-06-24 | 2023-09-22 | 电子科技大学 | Terahertz frequency tripler based on CMOS (complementary metal oxide semiconductor) process |
| CN115051651A (en) * | 2022-08-11 | 2022-09-13 | 壹新信通科技(成都)有限公司 | Terahertz frequency doubling Schottky diode structure, frequency multiplier and electronic equipment |
| CN115051651B (en) * | 2022-08-11 | 2022-11-01 | 壹新信通科技(成都)有限公司 | Terahertz frequency multiplication Schottky diode structure, frequency multiplier and electronic equipment |
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