CN205883166U - Terahertz of nai power is frequency tripling class balanced type frequency doubling circuit now - Google Patents
Terahertz of nai power is frequency tripling class balanced type frequency doubling circuit now Download PDFInfo
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- CN205883166U CN205883166U CN201620809424.7U CN201620809424U CN205883166U CN 205883166 U CN205883166 U CN 205883166U CN 201620809424 U CN201620809424 U CN 201620809424U CN 205883166 U CN205883166 U CN 205883166U
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Abstract
The utility model discloses a terahertz of nai power is frequency tripling class balanced type frequency doubling circuit now relates to terahertz circuit technical field now. The circuit includes radio frequency input waveguide, quartz substrate and radio frequency output waveguide, and multitube knot gaAs terahertz that negative pole and radio frequency matching microstrip line are connected frequency -multiplication diode's positive pole now is connected with a quartzy band wire of DC bias end, and every DC bias holds quartzy band wire to pass through a gold wire wire jumper to be connected with the one end of an electric capacity, and the other end of electric capacity passes through the gold wire wire jumper and is connected with the same low pass filter's that has integrateed input microstrip line. Circuit structure is simple, because bigger input power can be born in increasing of schottky diode figure, and a gaAs terahertz frequency -multiplication diode constitution type balanced type doubling of frequency form is now tied to 4 multitubes for circuit work is more stable.
Description
Technical field
This utility model relates to Terahertz circuit engineering field, particularly relates to a kind of Terahertz of resistance to power frequency tripling class balance
Formula frequency multiplier circuit.
Background technology
Terahertz (THz) ripple in a larger sense, refers to frequency electromagnetic wave in the range of 0.1-10THz, wherein
1THz=1000GHz, also it is believed that Terahertz frequency refers to the electromagnetic wave in the range of 0.3THz-3THz.THz ripple is at electromagnetic wave
Occupying the most special position in frequency spectrum, THz technology is the very important intersection Disciplinary Frontiers that International Technology circle is generally acknowledged.
In the systems such as Terahertz communication, measurement, source is most important.The solid-state Terahertz times of miniaturization, low cost at present
Frequently technology is the hot issue studied in the world, mainly uses GaAs base plane Schottky diode as frequency doubling non-linear's device
Part, exports in order to realize the power of Terahertz frequency range.It is a kind of for based on solid-state electronic technology, Terahertz frequency source being carried out expansion
Effective manner.In the evolution of circuit engineering, secondary frequency multiplication technology is high due to its shg efficiency, has obtained sending out widely
Exhibition.
After 2000, the development about solid-state frequency doubling technology is very fast, mainly has neutrodyne circuit and unbalanced electricity
Line structure.Two kinds of circuit all can put forward high-power bearing capacity by increasing the number of Schottky diode.Neutrodyne circuit by
Can effectively suppress unwanted even or odd frequency in it, receive relatively broad concern.Low side at Terahertz
Frequency, owing to the power amplifier technology of Ka wave band is the most ripe, therefore use obtains by the way of three frequencys multiplication from Ka wave band more
Source to Terahertz low side carries out the technology application being correlated with.
At present in commonly used No. three frequency multiplier circuits, typically all Schottky diode is fabricated in manufacturing process
It is applicable to the diode of No. three frequency multiplier circuit forms, general only 4 knots or 6 knots, having of each Schottky diode junction
Effect bears power at about 20mW, therefore limits input power and promotes further, causes output can not continue to increase.Greatly
Power output there is more wide application future, if multiple diodes can be used simultaneously, then can obtain bigger
Power exports, it is therefore desirable to develop a kind of new trebling circuit form.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of Terahertz of resistance to power frequency tripling class balanced type frequency multiplication
Circuit, described circuit structure is simple, due to increasing of Schottky diode number, can bear bigger input power, and more than 4
Pipe knot GaAs Terahertz frequency doubled diode constitutes class balanced type frequency multiplication form.
For solving above-mentioned technical problem, technical solution adopted in the utility model is: a kind of Terahertz of resistance to power three times
Frequently class balanced type frequency multiplier circuit, it is characterised in that: include radio frequency input waveguide, quartz base plate and radio frequency output waveguide, described stone
One end of English substrate is positioned at the waveguide slot of described radio frequency input waveguide, and it is defeated that the other end of described quartz base plate is positioned at described radio frequency
Going out in the waveguide slot of waveguide, input transition microstrip line is positioned on described quartz base plate, one end warp successively of described transition microstrip line
First transmission microstrip line, low pass filter, radio-frequency match microstrip line, the second transmission microstrip line are connected with output transition microstrip line,
Each multitube knot GaAs Terahertz frequency doubled diode includes four Schottky diodes being connected in series, and two of which multitube is tied
The anode of GaAs Terahertz frequency doubled diode is connected with radio-frequency match microstrip line, two other multitube knot GaAs Terahertz frequency multiplication two
The negative electrode of pole pipe is connected with radio-frequency match microstrip line, the multitube knot GaAs Terahertz frequency multiplication that anode is connected with radio-frequency match microstrip line
The negative electrode of diode and an earth terminal quartz band wire connect, the multitube knot GaAs terahertz that negative electrode is connected with radio-frequency match microstrip line
Hereby anode and a direct current biasing end quartz band wire of frequency doubled diode connects, and each direct current biasing end quartz band wire passes through one
One end of spun gold wire jumper and an electric capacity connects, and the other end of electric capacity is integrated with low pass filter by spun gold wire jumper with same
Input microstrip line connect.
Preferably, described input transition microstrip line is E face probe input transition microstrip line.
Preferably, described low pass filter is 5 rank or 7 rank height impedance micro-strip.
Preferably, the two ends of described multitube knot GaAs Terahertz frequency doubled diode are micro-with radio-frequency match respectively by conducting resinl
Band wire, earth terminal quartz band wire and direct current biasing end quartz band wire connect.
Preferably, described earth terminal quartz band wire is grounded with cavity by conducting resinl.
Preferably, the thickness of described quartz base plate is 30 microns to 75 microns.
Preferably, described radio frequency input waveguide is WR28 rectangular waveguide.
Preferably, four multitube knot GaAs Terahertz frequency doubled diode are that Saint Andrew's cross shape is fixing on a quartz substrate.
Use and have the beneficial effects that produced by technique scheme: the simple in construction of described circuit；Due to Xiao used
The number of special based diode increases, and can bear bigger input power；Four multitube knot GaAs Terahertz frequency doubled diode structures
Become class balanced type frequency multiplication form, and arrange in Saint Andrew's cross shape, it is possible to achieve preferably ground connection and introducing direct current biasing.
Accompanying drawing explanation
Fig. 1 is the structural representation of circuit described in this utility model embodiment；
Wherein: 101, radio frequency input waveguide 102, quartz base plate 103, radio frequency output waveguide 104, input transition microstrip line
105, the first transmission microstrip line 106, low pass filter 107, radio-frequency match microstrip line 108, second transmit microstrip line 109, output
Transition microstrip line 110, multitube knot GaAs Terahertz frequency doubled diode 111, earth terminal quartz band wire 112, direct current biasing end quartz
Band wire 113, spun gold wire jumper 114, electric capacity 115, it is integrated with the input microstrip line of low pass filter.
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is carried out clearly
Chu, it is fully described by, it is clear that described embodiment is only a part of embodiment of the present utility model rather than whole
Embodiment.Based on the embodiment in this utility model, those of ordinary skill in the art are not under making creative work premise
The every other embodiment obtained, broadly falls into the scope of this utility model protection.
Elaborate a lot of detail in the following description so that fully understanding this utility model, but this practicality is new
Type can also use other to be different from alternate manner described here to implement, and those skilled in the art can be without prejudice to this reality
Doing similar popularization in the case of novel intension, therefore this utility model is not limited by following public specific embodiment.
As it is shown in figure 1, this utility model embodiment discloses a kind of Terahertz of resistance to power frequency tripling class balanced type frequency multiplication electricity
Road, including radio frequency input waveguide 101, quartz base plate 102 and radio frequency output waveguide 103, one end of described quartz base plate 102 is positioned at
In the waveguide slot of described radio frequency input waveguide 101, the other end of described quartz base plate 102 is positioned at described radio frequency output waveguide 103
Waveguide slot in, wherein radiofrequency signal inputs through described radio frequency input waveguide 101, and the signal after frequency multiplication is through radio frequency output waveguide
Output.
Input transition microstrip line 104 is positioned on described quartz base plate 102, one end warp successively of described transition microstrip line 104
First transmission microstrip line 105, low pass filter 106, radio-frequency match microstrip line 107, second transmit microstrip line 108 and output transition
Microstrip line 109 connects.It is pointed out that the first transmission microstrip line 105, low pass filter 106, radio-frequency match microstrip line 107,
Second transmission microstrip line 108 is similarly positioned on described quartz base plate 102 with output transition microstrip line 109, and described input transition is micro-
On quartz base plate above the waveguide slot being positioned at described radio frequency input waveguide 101 of band wire 104 entirety, described output transition micro-strip
On quartz base plate above the waveguide slot being positioned at described radio frequency output waveguide 103 of line 109 entirety.
Each multitube knot GaAs Terahertz frequency doubled diode 110 includes four discrete Schottky diodes being connected in series,
The anode of two of which multitube knot GaAs Terahertz frequency doubled diode 110 is connected with radio-frequency match microstrip line 107, and two other are many
The negative electrode of pipe knot GaAs Terahertz frequency doubled diode 110 is connected with radio-frequency match microstrip line 107, anode and radio-frequency match microstrip line
Negative electrode and an earth terminal quartz band wire 111 of the multitube knot GaAs Terahertz frequency doubled diode 110 that 107 connect connect；Negative electrode
The anode of the multitube knot GaAs Terahertz frequency doubled diode 110 being connected with radio-frequency match microstrip line 107 and a direct current biasing end
Quartz band wire 112 connects；Each direct current biasing end quartz band wire 112 is by a spun gold wire jumper 113 and the one of an electric capacity 114
End connects, and the other end of electric capacity 114 is by spun gold wire jumper 113 and the same input microstrip line 115 being integrated with low pass filter
Connect.
It is pointed out that described multitube knot GaAs Terahertz frequency doubled diode 110 two ends by conducting resinl respectively with
Radio-frequency match microstrip line 107, earth terminal quartz band wire 111 and direct current biasing end quartz band wire 112 connect, described earth terminal stone
English band wire 111 is grounded with cavity by conducting resinl.
In order to better illustrate this utility model, inputting with 36GHz, 108GHz is as new to this practicality as a example by output frequency
The detailed description of the invention of type is illustrated.
Radio frequency input waveguide 101(is WR-28 rectangular waveguide herein) introduce 36GHz radiofrequency signal, input transition microstrip line
104 radiofrequency signals are incorporated into quartz circuit from waveguide and are transmitted, and low pass filter can be 5 rank or 7 rank height Low ESRs
Microstrip line, the effect of low pass filter is that transmission maximum for the radiofrequency signal of input to multitube is tied GaAs Terahertz frequency multiplication two pole
At pipe 110, stop 3 subharmonic (108GHz) of radiofrequency signal to feed back to input, the effect of radio-frequency match microstrip line 107 simultaneously
It is by input radio frequency signal impedance with the impedance of multitube knot GaAs Terahertz frequency doubled diode 110 carries out impedance matching, so that
In radiofrequency signal maximum feed-in multitube knot GaAs Terahertz frequency doubled diode 110.Multitube knot GaAs Terahertz frequency multiplication two
Pole pipe 110 is reverse parallel connection to radio-frequency input signals, is series aiding connection to RF output end.Electric capacity 114 is welded on cavity and (places
The cavity of described frequency multiplier circuit) on surface.By direct current biasing end, direct current biasing can be introduced.Concrete direct current biasing, permissible
Use sub-miniature A connector to connect one section of input microstrip line 115 being integrated with low pass filter, be integrated with the input micro-strip of low pass filter
Line 115 requirement can filter input fundamental frequency, and is connected with electric capacity 114, and direct current biasing introduces Schottky diode the most at last
In.Earth terminal quartz band wire 111 realizes good earth by conducting resinl and cavity.Schottky diode uses the work of face-down bonding
Skill.
As shown in Figure 1,4 multitube knot GaAs Terahertz frequency doubled diode 110 are welded into Saint Andrew's cross version.All
The length and width of microstrip line needs to calculate, and the design of waveguide slot is also required to calculate, and meets the relevant of doubler
Requirement.The thickness of quartz base plate 102 is generally 30 to 75 microns.
The simple in construction of described circuit；The number of the Schottky diode owing to using increases, and can bear bigger defeated
Enter power；Four multitube knot GaAs Terahertz frequency doubled diode constitute class balanced type frequency multiplication form, and arrange in Saint Andrew's cross shape, can
To realize more preferable ground connection and to introduce direct current biasing.
Claims (8)
1. the Terahertz of a resistance to power frequency tripling class balanced type frequency multiplier circuit, it is characterised in that: include radio frequency input waveguide
(101), quartz base plate (102) and radio frequency output waveguide (103), it is defeated that one end of described quartz base plate (102) is positioned at described radio frequency
Entering in the waveguide slot of waveguide (101), the other end of described quartz base plate (102) is positioned at the ripple of described radio frequency output waveguide (103)
In guide groove, input transition microstrip line (104) is positioned on described quartz base plate (102), and one end of described transition microstrip line (104) depends on
Secondary through the first transmission microstrip line (105), low pass filter (106), radio-frequency match microstrip line (107), the second transmission microstrip line
(108) being connected with output transition microstrip line (109), each multitube knot GaAs Terahertz frequency doubled diode (110) includes four strings
The Schottky diode that connection connects, the anode of two of which multitube knot GaAs Terahertz frequency doubled diode (110) and radio-frequency match
Microstrip line (107) connects, the negative electrode of two other multitube knot GaAs Terahertz frequency doubled diode (110) and radio-frequency match microstrip line
(107) connect, the moon of multitube knot GaAs Terahertz frequency doubled diode (110) that anode is connected with radio-frequency match microstrip line (107)
Pole is connected with earth terminal quartz band wire (111), the multitube knot GaAs terahertz that negative electrode is connected with radio-frequency match microstrip line (107)
Hereby anode and direct current biasing end quartz band wire (112) of frequency doubled diode (110) connects, each direct current biasing end quartz band
Line (112) is connected with one end of an electric capacity (114) by a spun gold wire jumper (113), and the other end of electric capacity (114) is by gold
Silk wire jumper (113) is connected with the same input microstrip line (115) being integrated with low pass filter.
The Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit the most as claimed in claim 1, it is characterised in that: described input
Transition microstrip line (104) is E face probe input transition microstrip line.
The Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit the most as claimed in claim 1, it is characterised in that: described low pass
Wave filter (106) is 5 rank or 7 rank height impedance micro-strip.
The Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit the most as claimed in claim 1, it is characterised in that: described multitube
Knot GaAs Terahertz frequency doubled diode (110) two ends by conducting resinl respectively with radio-frequency match microstrip line (107), earth terminal stone
English band wire (111) and direct current biasing end quartz band wire (112) connect.
The Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit the most as claimed in claim 1, it is characterised in that: described ground connection
End quartz band wire (111) is grounded with cavity by conducting resinl.
The Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit the most as claimed in claim 1, it is characterised in that: described quartz
The thickness of substrate (102) is 30 microns to 75 microns.
The Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit the most as claimed in claim 1, it is characterised in that: described radio frequency
Input waveguide (101) is WR-28 rectangular waveguide.
The Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit the most as claimed in claim 1, it is characterised in that: four multitubes
Knot GaAs Terahertz frequency doubled diode (110) is fixed on a quartz substrate in Saint Andrew's cross shape.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620809424.7U CN205883166U (en) | 2016-07-29 | 2016-07-29 | Terahertz of nai power is frequency tripling class balanced type frequency doubling circuit now |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620809424.7U CN205883166U (en) | 2016-07-29 | 2016-07-29 | Terahertz of nai power is frequency tripling class balanced type frequency doubling circuit now |
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| CN205883166U true CN205883166U (en) | 2017-01-11 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106160668A (en) * | 2016-07-29 | 2016-11-23 | 中国电子科技集团公司第十三研究所 | The Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit |
| CN107124140A (en) * | 2017-05-27 | 2017-09-01 | 中国电子科技集团公司第十三研究所 | One side quartz fin line list diode Terahertz balanced type secondary frequency multiplication circuit |
| CN110505019A (en) * | 2019-07-17 | 2019-11-26 | 电子科技大学 | One kind being based on piece Terahertz multiple-frequency modulation multifunction chip |
-
2016
- 2016-07-29 CN CN201620809424.7U patent/CN205883166U/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106160668A (en) * | 2016-07-29 | 2016-11-23 | 中国电子科技集团公司第十三研究所 | The Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit |
| CN106160668B (en) * | 2016-07-29 | 2023-05-30 | 中国电子科技集团公司第十三研究所 | Power-resistant terahertz frequency-tripling type balance frequency doubling circuit |
| CN107124140A (en) * | 2017-05-27 | 2017-09-01 | 中国电子科技集团公司第十三研究所 | One side quartz fin line list diode Terahertz balanced type secondary frequency multiplication circuit |
| CN107124140B (en) * | 2017-05-27 | 2023-06-20 | 中国电子科技集团公司第十三研究所 | Terahertz balanced type secondary frequency multiplication circuit with single-sided quartz fin line and single diode |
| CN110505019A (en) * | 2019-07-17 | 2019-11-26 | 电子科技大学 | One kind being based on piece Terahertz multiple-frequency modulation multifunction chip |
| CN110505019B (en) * | 2019-07-17 | 2022-05-03 | 电子科技大学 | Terahertz frequency multiplication modulation multifunctional chip based on chip |
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