CN205883165U - Terahertz of nai power two doublings of frequency nonequilibrium now formula circuit - Google Patents
Terahertz of nai power two doublings of frequency nonequilibrium now formula circuit Download PDFInfo
- Publication number
- CN205883165U CN205883165U CN201620809383.1U CN201620809383U CN205883165U CN 205883165 U CN205883165 U CN 205883165U CN 201620809383 U CN201620809383 U CN 201620809383U CN 205883165 U CN205883165 U CN 205883165U
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- frequency
- terahertz
- microstrip line
- waveguide
- power
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Abstract
The utility model discloses a terahertz of nai power two doublings of frequency nonequilibrium now formula circuit relates to terahertz circuit technical field now. The circuit includes radio frequency input waveguide, quartz substrate and radio frequency output waveguide, quartz substrate's one end is located in radio frequency input waveguide's the waveguide slot, quartz substrate's the other end is located in the waveguide slot of radio frequency output waveguide, input transition microstrip line is located quartz substrate is last, the one end of transition microstrip line is connected through first transmission microstrip line, low pass filter, radio frequency matching microstrip line, second transmission microstrip line and output transition microstrip line in proper order, and four multitube knot gaAs terahertzs positive pole of frequency -multiplication diode now are connected with radio frequency matching microstrip line, and the negative pole that every is multicell outside tying gaAs terahertz frequency -multiplication diode lieing in the most now is connected with an earthing terminal quartz band wire. Circuit structure is simple, because bigger input power can be born in increasing of schottky diode figure.
Description
Technical field
This utility model relates to Terahertz circuit engineering field, particularly relates to a kind of Terahertz of resistance to power two frequency multiplication non-equilibrium
Formula circuit.
Background technology
Terahertz (THz) ripple in a larger sense, refers to frequency electromagnetic wave in the range of 0.1-10THz, wherein
1THz=1000GHz, also it is believed that Terahertz frequency refers to the electromagnetic wave in the range of 0.3THz-3THz.THz ripple is at electromagnetic wave
Occupying the most special position in frequency spectrum, THz technology is the very important intersection Disciplinary Frontiers that International Technology circle is generally acknowledged.
In the systems such as Terahertz communication, measurement, source is most important.The solid-state Terahertz times of miniaturization, low cost at present
Frequently technology is the hot issue studied in the world, mainly uses GaAs base plane Schottky diode as frequency doubling non-linear's device
Part, exports in order to realize the power of Terahertz frequency range.It is a kind of for based on solid-state electronic technology, Terahertz frequency source being carried out expansion
Effective manner.In the evolution of circuit engineering, secondary frequency multiplication technology is high due to its shg efficiency, has obtained sending out widely
Exhibition.
After 2000, the development about solid-state frequency doubling technology is very fast, mainly has neutrodyne circuit and unbalanced electricity
Line structure.Two kinds of circuit all can carry high-power bearing capacity, unbalanced circuit by increasing the number of Schottky diode
Relatively neutrodyne circuit is compared, and owing to Schottky diode two ends directly contact with cavity wall, radiating effect is more preferable, relatively balanced type electricity
Road can carry bigger input power, and unbalanced circuit is the most gradually used.
At present in commonly used non-equilibrium secondary frequency multiplication circuit, typically all Schottky diode is in manufacturing process
It is fabricated to be applicable to the diode of secondary frequency multiplication circuit form, general only 4 knots or 6 knots, each Schottky diode
Knot effectively bear power at about 20mW, therefore limit input power and promote further, cause output not continue
Increase.Big power output has more wide application future, it is therefore desirable to develop a kind of two new frequency multiplier circuit forms.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of Terahertz of resistance to power two frequency multiplication unbalanced circuit,
Described circuit structure is simple, due to increasing of Schottky diode number, can bear bigger input power.
For solving above-mentioned technical problem, technical solution adopted in the utility model is: a kind of Terahertz of resistance to power two times
Frequently unbalanced circuit, it is characterised in that: include radio frequency input waveguide, quartz base plate and radio frequency output waveguide, described quartz base
One end of plate is positioned at the waveguide slot of described radio frequency input waveguide, and the other end of described quartz base plate is positioned at described radio frequency output wave
In the waveguide slot led, input transition microstrip line is positioned on described quartz base plate, and one end of described transition microstrip line is successively through first
Transmission microstrip line, low pass filter, radio-frequency match microstrip line, the second transmission microstrip line are connected with output transition microstrip line, four
The anode of multitube knot GaAs Terahertz frequency doubled diode is connected with radio-frequency match microstrip line, each multitube knot GaAs Terahertz frequency multiplication
Diode is positioned at outermost negative electrode and an earth terminal quartz band wire connects, the most each multitube knot GaAs Terahertz frequency multiplication two
Pole pipe includes four Schottky diodes being connected in series.
Preferably, described input transition microstrip line is E face probe input transition microstrip line.
Preferably, described low pass filter is 5 rank or 7 rank height impedance micro-strip.
Preferably, the two ends of described multitube knot GaAs Terahertz frequency doubled diode are micro-with radio-frequency match respectively by conducting resinl
Band wire and earth terminal quartz band wire connect.
Preferably, described earth terminal quartz band wire is grounded with cavity by conducting resinl.
Preferably, the thickness of described quartz base plate is 30 microns to 75 microns.
Preferably, described radio frequency input waveguide is WM-2032 rectangular waveguide, and in rectangular waveguide, a and b is respectively 2032 microns
With 1016 microns.
Preferably, four multitube knot GaAs Terahertz frequency doubled diode are that Saint Andrew's cross shape is fixing on a quartz substrate.
Use and have the beneficial effects that produced by technique scheme: the simple in construction of described unbalanced circuit；Due to
The number of the Schottky diode used increases, and can bear bigger input power；Four multitube knot GaAs Terahertz frequencys multiplication
Diode is that Saint Andrew's cross shape is arranged, it is possible to achieve preferably ground connection.
Accompanying drawing explanation
Fig. 1 is the structural representation of circuit described in this utility model embodiment；
Wherein: 101, radio frequency input waveguide 102, quartz base plate 103, radio frequency output waveguide 104, input transition microstrip line
105, the first transmission microstrip line 106, low pass filter 107, radio-frequency match microstrip line 108, second transmit microstrip line 109, output
Transition microstrip line 110, multitube knot GaAs Terahertz frequency doubled diode 111, earth terminal quartz band wire.
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is carried out clearly
Chu, it is fully described by, it is clear that described embodiment is only a part of embodiment of the present utility model rather than whole
Embodiment.Based on the embodiment in this utility model, those of ordinary skill in the art are not under making creative work premise
The every other embodiment obtained, broadly falls into the scope of this utility model protection.
Elaborate a lot of detail in the following description so that fully understanding this utility model, but this practicality is new
Type can also use other to be different from alternate manner described here to implement, and those skilled in the art can be without prejudice to this reality
Doing similar popularization in the case of novel intension, therefore this utility model is not limited by following public specific embodiment.
As it is shown in figure 1, this utility model embodiment discloses a kind of Terahertz of resistance to power two frequency multiplication unbalanced circuit, bag
Including radio frequency input waveguide 101, quartz base plate 102 and radio frequency output waveguide 103, one end of described quartz base plate 102 is positioned at described
In the waveguide slot of radio frequency input waveguide 101, the other end of described quartz base plate 102 is positioned at the ripple of described radio frequency output waveguide 103
In guide groove, wherein radiofrequency signal inputs through described radio frequency input waveguide 101, and the signal after frequency multiplication is defeated through radio frequency output waveguide
Go out.
Input transition microstrip line 104 is positioned on described quartz base plate 102, one end warp successively of described transition microstrip line 104
First transmission microstrip line 105, low pass filter 106, radio-frequency match microstrip line 107, second transmit microstrip line 108 and output transition
Microstrip line 109 connects.It is pointed out that the first transmission microstrip line 105, low pass filter 106, radio-frequency match microstrip line 107,
Second transmission microstrip line 108 is similarly positioned on described quartz base plate 102 with output transition microstrip line 109, and described input transition is micro-
On quartz base plate above the waveguide slot being positioned at described radio frequency input waveguide 101 of band wire 104 entirety, described output transition micro-strip
On quartz base plate above the waveguide slot being positioned at described radio frequency output waveguide 103 of line 109 entirety.
The anode of four multitube knot GaAs Terahertz frequency doubled diode 110 is connected with radio-frequency match microstrip line 107, Mei Geduo
Pipe knot GaAs Terahertz frequency doubled diode 110 is positioned at outermost negative electrode and an earth terminal quartz band wire 111 connects, the most often
Individual multitube knot GaAs Terahertz frequency doubled diode 110 includes four Schottky diodes being connected in series.
In order to better illustrate this utility model, with 100GHz input, 200GHz as a example by output frequency to this practicality
Novel detailed description of the invention is illustrated.
Radio frequency input waveguide 101(is WM-2032 rectangular waveguide herein, a and b is respectively 2032 microns and 1016 microns) draw
Entering 100GHz radiofrequency signal, 104 radiofrequency signals of the input transition microstrip line on quartz base plate are incorporated into stone from input waveguide
Circuit on English substrate is transmitted, and the thickness of quartz base plate is generally 30 to 75 microns.Low pass filter 106 can be 5 rank
Or 7 rank height impedance micro-strip, the effect of low pass filter is by transmission maximum for the radiofrequency signal of input to diode, with
Time stop radiofrequency signal 2 subharmonic (200GHz) to input feed back, the effect of radio-frequency match microstrip line is by input radio frequency
Signal impedance carries out impedance matching with the impedance of diode, so that radiofrequency signal maximum feed-in multitube knot GaAs terahertz
Hereby in frequency doubled diode 110.Multitube knot GaAs Terahertz frequency doubled diode 110 is in parallel in the same direction to radio-frequency input signals, correlation
Frequently outfan is in parallel in the same direction.In use, each multitube knot GaAs Terahertz frequency doubled diode 110 positive pole all with radio frequency
Join microstrip line 107 to be connected, the negative electrode of each multitube knot GaAs Terahertz frequency doubled diode 110 and earth terminal quartz band wire 111 phase
Even.The two ends of multitube knot GaAs Terahertz frequency doubled diode 110 are by conducting resinl and radio-frequency match microstrip line 107 and earth terminal
Quartz band wire 111 is connected.Earth terminal quartz band wire 111 realizes good earth by conducting resinl and cavity.Multitube knot GaAs is too
The technique using face-down bonding in hertz frequency doubled diode 110.
The simple in construction of described unbalanced circuit；The number of the Schottky diode owing to using increases, and can bear
Bigger input power；Four multitube knot GaAs Terahertz frequency doubled diode are that Saint Andrew's cross shape is arranged, it is possible to achieve preferably connect
Ground.
Claims (8)
1. the Terahertz of a resistance to power two frequency multiplication unbalanced circuit, it is characterised in that: include radio frequency input waveguide (101), stone
English substrate (102) and radio frequency output waveguide (103), one end of described quartz base plate (102) is positioned at described radio frequency input waveguide
(101), in waveguide slot, the other end of described quartz base plate (102) is positioned at the waveguide slot of described radio frequency output waveguide (103),
Input transition microstrip line (104) is positioned on described quartz base plate (102), and one end of described transition microstrip line (104) is successively through
One transmission microstrip line (105), low pass filter (106), radio-frequency match microstrip line (107), the second transmission microstrip line (108) are with defeated
Go out transition microstrip line (109) to connect, the anode of four multitubes knot GaAs Terahertz frequency doubled diode (110) and radio-frequency match micro-strip
Line (107) connects, and each multitube knot GaAs Terahertz frequency doubled diode (110) is positioned at outermost negative electrode and an earth terminal stone
English band wire (111) connects, and the most each multitube knot GaAs Terahertz frequency doubled diode (110) includes four Xiao Te being connected in series
Based diode.
The Terahertz of resistance to power two frequency multiplication unbalanced circuit the most as claimed in claim 1, it is characterised in that: described input transition
Microstrip line (104) is E face probe input transition microstrip line.
The Terahertz of resistance to power two frequency multiplication unbalanced circuit the most as claimed in claim 1, it is characterised in that: described low-pass filtering
Device (106) is 5 rank or 7 rank height impedance micro-strip.
The Terahertz of resistance to power two frequency multiplication unbalanced circuit the most as claimed in claim 1, it is characterised in that: described multitube is tied
The two ends of GaAs Terahertz frequency doubled diode (110) by conducting resinl respectively with radio-frequency match microstrip line (107) and earth terminal
Quartz band wire (111) connects.
The Terahertz of resistance to power two frequency multiplication unbalanced circuit the most as claimed in claim 1, it is characterised in that: described earth terminal stone
English band wire (111) is grounded with cavity by conducting resinl.
The Terahertz of resistance to power two frequency multiplication unbalanced circuit the most as claimed in claim 1, it is characterised in that: described quartz base plate
(102) thickness is 30 microns to 75 microns.
The Terahertz of resistance to power two frequency multiplication unbalanced circuit the most as claimed in claim 1, it is characterised in that: described radio frequency inputs
Waveguide (101) is WM-2032 rectangular waveguide, and in rectangular waveguide, a and b is respectively 2032 microns and 1016 microns.
The Terahertz of resistance to power two frequency multiplication unbalanced circuit the most as claimed in claim 1, it is characterised in that: four multitube knots
GaAs Terahertz frequency doubled diode (110) fixes on a quartz substrate in Saint Andrew's cross shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620809383.1U CN205883165U (en) | 2016-07-29 | 2016-07-29 | Terahertz of nai power two doublings of frequency nonequilibrium now formula circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620809383.1U CN205883165U (en) | 2016-07-29 | 2016-07-29 | Terahertz of nai power two doublings of frequency nonequilibrium now formula circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205883165U true CN205883165U (en) | 2017-01-11 |
Family
ID=57699054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620809383.1U Withdrawn - After Issue CN205883165U (en) | 2016-07-29 | 2016-07-29 | Terahertz of nai power two doublings of frequency nonequilibrium now formula circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205883165U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026927A (en) * | 2016-07-29 | 2016-10-12 | 中国电子科技集团公司第十三研究所 | Terahertz double frequency unbalanced circuit with high power capacity |
-
2016
- 2016-07-29 CN CN201620809383.1U patent/CN205883165U/en not_active Withdrawn - After Issue
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026927A (en) * | 2016-07-29 | 2016-10-12 | 中国电子科技集团公司第十三研究所 | Terahertz double frequency unbalanced circuit with high power capacity |
| WO2018019311A1 (en) * | 2016-07-29 | 2018-02-01 | 中国电子科技集团公司第十三研究所 | High power capacity thz-scale frequency doubling unbalanced circuit |
| CN106026927B (en) * | 2016-07-29 | 2019-08-20 | 中国电子科技集团公司第十三研究所 | Two frequency multiplication unbalanced circuit of the Terahertz of resistance to power |
| US10868497B2 (en) | 2016-07-29 | 2020-12-15 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Unbalanced terahertz frequency doubler circuit with power handling capacity |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20170111 Effective date of abandoning: 20190820 |
|
| AV01 | Patent right actively abandoned |