CN204761398U - Novel F wave band frequency tripler - Google Patents
Novel F wave band frequency tripler Download PDFInfo
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- CN204761398U CN204761398U CN201520447013.3U CN201520447013U CN204761398U CN 204761398 U CN204761398 U CN 204761398U CN 201520447013 U CN201520447013 U CN 201520447013U CN 204761398 U CN204761398 U CN 204761398U
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Abstract
The utility model discloses a novel F wave band frequency tripler relates to terahertz device technical field now. The utility model discloses a high cutoff frequency gaN base schottky diode adopts the excessive circuit form of waveguide microstrip as non -linear doubling of frequency device, input/output, and input fundamental wave signal excessively meets fundamental wave low pass filter to quartzy circuit, reaches gaN base schottky diode behind fundamental wave matching circuit, produces the third harmonic signal, and third harmonic reaches the output of output waveguide end through microstrip waveguide conversion behind output matching circuit. Wherein fundamental wave low pass filter can pass through fundamental wave incoming signal, prevents second harmonic and third harmonic signal, and the output adopts and subtracts high waveguide, and the design dimensional requirement who subtracts high waveguide can be by the second harmonic frequency of fundamental wave. Frequency tripler endure the power height, heat dispersion is good, the reliability is better.
Description
Technical field
The utility model relates to THz devices technical field, particularly relates to a kind of novel F wave band frequency tripler.
Background technology
Terahertz (THz) ripple, from broadly, refers to the electromagnetic wave of frequency within the scope of 0.1THz-10THz, wherein 1THz=1000GHz, and also someone thinks that Terahertz frequency refers to the electromagnetic wave within the scope of 0.3THz-3THz.THz ripple occupies very special position in electromagnetic spectrum, and THz technology is the very important intersection Disciplinary Frontiers that International Technology circle is generally acknowledged.F wave band refers to the electromagnetic frequency between 90GHz-140GHz.
F wave band is higher due to its frequency, has very huge potential application in fields such as high-speed communications.To utilize this wave band, need make the frequency source of F wave band, because its frequency is high, conventional is doubly take advantage of to this frequency range based on the form of frequency multiplication by low end frequency at present, wherein utilizes Ka wave band frequency tripling, can by frequency expansion to F wave band.The frequency tripler of this form at present, its key electronic device many employings GaAs Schottky diode, GaAs Schottky diode due to its mobility higher, series resistance is little, cut-off frequency is high, had application widely at F wave band and Terahertz frequency range, but the puncture voltage of GaAs Schottky diode is lower, the limited power capacity that can carry.
GaN is third generation wide-band-gap semiconductor material, its GaN material band gap is 3.4eV, relative to GaAs material band gap 1.4eV, band gap is wider, GaN has higher puncture voltage, again because GaN material has better heat-sinking capability relative to GaAs material, therefore GaN base Schottky diode can bear higher input power relative to GaAs based schottky diode, and heat dispersion is better.
Less to the research of GaN base HF schottky diode in the world, one is because material mobility is low, and two is complex process, makes F the wave band even frequency multiplier of Terahertz frequency range, never saw based on GaN Schottky diode.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of novel F wave band frequency tripler, and the tolerance power of described frequency tripler is high, perfect heat-dissipating, better reliability.
For solving the problems of the technologies described above, technical solution adopted in the utility model is: a kind of novel F wave band frequency tripler, it is characterized in that: comprise quartz base plate, GaN base higher cutoff frequency Schottky diode, radio frequency output waveguide and first-harmonic input waveguide, the first transmission microstrip line on quartz base plate is across on first-harmonic input waveguide, by fundamental signal excessively on quartzy microstrip circuit, first transmission microstrip line is through the second transmission microstrip line, low pass filter is connected with one end of substrate matched transmission line, the other end of substrate matched transmission line is connected with the positive pole of GaN base higher cutoff frequency Schottky diode, the minus earth of GaN base higher cutoff frequency Schottky diode, one end of output matching microstrip line is connected with the positive pole of GaN base higher cutoff frequency Schottky diode, the other end is connected with one end of the excessive microstrip line of output, the excessive microstrip line of output across in radio frequency output waveguide, by required harmonic signal from quartzy microstrip circuit excessively to radio frequency output waveguide, described first transmission microstrip line, the second transmission microstrip line, low pass filter, substrate matched transmission line, GaN base higher cutoff frequency Schottky diode, output matching microstrip line and excessive microstrip line of output are positioned on described quartz base plate.
Further technical scheme is: described low pass filter is 5 rank or 7 rank height impedance microstrip filter.
Further technical scheme is: described GaN base higher cutoff frequency Schottky diode comprises four GaN base diodes, and wherein two is one group, and two GaN base diodes in a group are first connected, then with two GaN base diodes in parallels of connecting in another group.
Further technical scheme is: the thickness of quartz base plate is 30 microns to 75 microns.
Further technical scheme is: quartz base plate entirety is placed in the waveguide slot between radio frequency output waveguide and first-harmonic input waveguide, and the groove width of waveguide slot is wider than quartz base plate 40 microns-60 microns.
The beneficial effect adopting technique scheme to produce is: the utility model adopts higher cutoff frequency GaN base Schottky diode as frequency doubling non-linear's device, input and output adopt Waveguide-microbelt excessive circuit form, input fundamental signal excessively connects first-harmonic low pass filter to quartzy circuit, GaN base Schottky diode is reached after first-harmonic match circuit, produce harmonic signal, triple-frequency harmonics, after output match circuit, reaches output waveguide end through micro-band waveguide transitions and exports.Wherein first-harmonic low pass filter can pass through first-harmonic input signal, stops second harmonic and harmonic signal, and output adopts and subtracts high waveguide, and the design size subtracting high waveguide requires the second harmonic frequency that can end first-harmonic.Advantage of the present utility model is: frequency doubling non-linear's device adopts GaN base higher cutoff frequency Schottky diode, the cut-off frequency of GaN base diode is up to 0.8THz, it is relative to the Schottky diode of GaAs same anode junction area, and its tolerance power can increase 3dB-4dB; Device circuitry is unbalanced circuit design, and device hot loop is better, good heat dissipation effect; Device adopts Zero-bias working, better reliability.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Wherein: 101, radio frequency output waveguide 102, first-harmonic input waveguide 103, quartz base plate 104, first transmit microstrip line 105, second and transmit microstrip line 106, low pass filter 107, substrate matched transmission line 108, output matching microstrip line 109, the excessive microstrip line 110 of output, GaN base higher cutoff frequency Schottky diode.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, be clearly and completely described the technical scheme in the utility model embodiment, obviously, described embodiment is only a part of embodiment of the present utility model, instead of whole embodiments.Based on the embodiment in the utility model, those of ordinary skill in the art are not making the every other embodiment obtained under creative work prerequisite, all belong to the scope of the utility model protection.
Set forth a lot of detail in the following description so that fully understand the utility model, but the utility model can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when doing similar popularization without prejudice to when the utility model intension, and therefore the utility model is by the restriction of following public specific embodiment.
As shown in Figure 1, the utility model discloses a kind of novel F wave band frequency tripler, comprise quartz base plate 103, GaN base higher cutoff frequency Schottky diode 110, radio frequency output waveguide 101 and first-harmonic input waveguide 102.On quartz base plate 103 first transmits microstrip line 104 across on first-harmonic input waveguide 102, by fundamental signal excessively on quartzy microstrip circuit; First transmission microstrip line 104 is connected with one end of substrate matched transmission line 107 through the second transmission microstrip line 105, low pass filter 106, the other end of substrate matched transmission line 107 is connected with the positive pole of GaN base higher cutoff frequency Schottky diode 110, the minus earth of GaN base higher cutoff frequency Schottky diode 110;
One end of output matching microstrip line 108 is connected with the positive pole of GaN base higher cutoff frequency Schottky diode 110, the other end is connected with one end of the excessive microstrip line 109 of output, the excessive microstrip line 109 of output across in radio frequency output waveguide 101, by required harmonic signal from quartzy microstrip circuit excessively to radio frequency output waveguide 101; Described first transmission microstrip line 104, second transmits microstrip line 105, low pass filter 106, substrate matched transmission line 107, GaN base higher cutoff frequency Schottky diode 110, output matching microstrip line 108 and the excessive microstrip line of output 109 and is positioned on described quartz base plate 103.
Principle: first-harmonic input waveguide 102 introduces the high-power fundamental signal of Ka wave band, by the first transmission microstrip line 104, by fundamental signal excessively on quartzy microstrip circuit, through the second transmission microstrip line 105 and low pass filter 106, wherein low pass filter can be 5 rank or 7 rank height impedance microstrip filter, for realizing the transmission of fundamental signal, stop secondary and harmonic signal to the leakage of first-harmonic waveguide end simultaneously, GaN base higher cutoff frequency Schottky diode 110 is reached after substrate matched transmission line 107, wherein ground connection is wanted at diode two ends, realize good hot loop, GaN base higher cutoff frequency Schottky diode 110 face-down bonding on a quartz substrate, two tube cores are adopted first to connect, in parallel in the same way again, conveniently face-down bonding, a pad can be made in the middle of tube core.Fundamental signal is when GaN base higher cutoff frequency Schottky diode 110, due to the non-linear C-V characteristic of diode, produce each harmonic, wherein triple-frequency harmonics transfers to the excessive microstrip line 109 of output through output matching microstrip line 108, by required harmonic signal excessively to radio frequency output waveguide 101, in order to prevent second harmonic from exporting at output, radio frequency output waveguide 101 front end adopts and subtracts high waveguide form, the frequency of cut-off second harmonic.
The length of all microstrip lines and width need to set according to the actual conditions of device.The thickness of quartz base plate is generally 30 microns to 75 microns, quartz circuit integrity is placed in the waveguide slot between radio frequency output waveguide 101 and first-harmonic input waveguide 102, the width of waveguide slot reaches and can put down quartz base plate, groove width 50 microns wider than quartz base plate of general waveguide slot.
The utility model adopts higher cutoff frequency GaN base Schottky diode as frequency doubling non-linear's device, input and output adopt Waveguide-microbelt excessive circuit form, input fundamental signal excessively connects first-harmonic low pass filter to quartzy circuit, GaN base Schottky diode is reached after first-harmonic match circuit, produce harmonic signal, triple-frequency harmonics, after output match circuit, reaches output waveguide end through micro-band waveguide transitions and exports.Wherein first-harmonic low pass filter can pass through first-harmonic input signal, stops second harmonic and harmonic signal, and output adopts and subtracts high waveguide, and the design size subtracting high waveguide requires the second harmonic frequency that can end first-harmonic.Advantage of the present utility model is: frequency doubling non-linear's device adopts GaN base higher cutoff frequency Schottky diode, the cut-off frequency of GaN base diode is up to 0.8THz, it is relative to the Schottky diode of GaAs same anode junction area, and its tolerance power can increase 3dB-4dB; Device circuitry is unbalanced circuit design, and device hot loop is better, good heat dissipation effect; Device adopts Zero-bias working, better reliability.
Claims (5)
1. a novel F wave band frequency tripler, it is characterized in that: comprise quartz base plate (103), GaN base higher cutoff frequency Schottky diode (110), radio frequency output waveguide (101) and first-harmonic input waveguide (102), the first transmission microstrip line (104) on quartz base plate (103) is across on first-harmonic input waveguide (102), by fundamental signal excessively on quartzy microstrip circuit, first transmission microstrip line (104) is through the second transmission microstrip line (105), low pass filter (106) is connected with one end of substrate matched transmission line (107), the other end of substrate matched transmission line (107) is connected with the positive pole of GaN base higher cutoff frequency Schottky diode (110), the minus earth of GaN base higher cutoff frequency Schottky diode (110), one end of output matching microstrip line (108) is connected with the positive pole of GaN base higher cutoff frequency Schottky diode (110), the other end is connected with one end of the excessive microstrip line of output (109), the excessive microstrip line of output (109) across in radio frequency output waveguide (101), by required harmonic signal from quartzy microstrip circuit excessively to radio frequency output waveguide (101), described first transmission microstrip line (104), the second transmission microstrip line (105), low pass filter (106), substrate matched transmission line (107), GaN base higher cutoff frequency Schottky diode (110), output matching microstrip line (108) and the excessive microstrip line of output (109) are positioned on described quartz base plate (103).
2. novel F wave band frequency tripler according to claim 1, is characterized in that: described low pass filter (106) is 5 rank or 7 rank height impedance microstrip filter.
3. novel F wave band frequency tripler according to claim 1, it is characterized in that: described GaN base higher cutoff frequency Schottky diode (110) comprises four GaN base diodes, wherein two is one group, two GaN base diodes in one group are first connected, then with two GaN base diodes in parallels of connecting in another group.
4. novel F wave band frequency tripler according to claim 1, is characterized in that: the thickness of quartz base plate (103) is 30 microns to 75 microns.
5. novel F wave band frequency tripler according to claim 1, it is characterized in that: quartz base plate (103) entirety is placed in the waveguide slot between radio frequency output waveguide (101) and first-harmonic input waveguide (102), the groove width of waveguide slot is wider than quartz base plate (103) 40 microns-60 microns.
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| CN201520447013.3U CN204761398U (en) | 2015-06-26 | 2015-06-26 | Novel F wave band frequency tripler |
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| CN201520447013.3U CN204761398U (en) | 2015-06-26 | 2015-06-26 | Novel F wave band frequency tripler |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104935254A (en) * | 2015-06-26 | 2015-09-23 | 中国电子科技集团公司第十三研究所 | Novel F band frequency tripler |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104935254A (en) * | 2015-06-26 | 2015-09-23 | 中国电子科技集团公司第十三研究所 | Novel F band frequency tripler |
| CN104935254B (en) * | 2015-06-26 | 2018-04-06 | 中国电子科技集团公司第十三研究所 | New F wave bands frequency tripler |
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