CN104935254B - New F wave bands frequency tripler - Google Patents
New F wave bands frequency tripler Download PDFInfo
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- CN104935254B CN104935254B CN201510360823.XA CN201510360823A CN104935254B CN 104935254 B CN104935254 B CN 104935254B CN 201510360823 A CN201510360823 A CN 201510360823A CN 104935254 B CN104935254 B CN 104935254B
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Abstract
The invention discloses a kind of new F wave bands frequency tripler, it is related to THz devices technical field.The present invention is using higher cutoff frequency GaN base Schottky diode as frequency doubling non-linear's device, input and output use Waveguide-microbelt excessive circuit form, input fundamental signal is excessively to connecing fundamental wave low pass filter on quartzy circuit, reach GaN base Schottky diode after fundamental wave match circuit, produce harmonic signal, triple-frequency harmonics reaches the output of output waveguide end after output end match circuit, through micro-strip waveguide transitions.Wherein fundamental wave low pass filter can prevent second harmonic and harmonic signal by fundamental wave input signal, and for output end using high waveguide is subtracted, the second harmonic frequency of fundamental wave can be ended by subtracting the design size requirement of high waveguide.The tolerance power height of the frequency tripler, perfect heat-dissipating, better reliability.
Description
Technical field
The present invention relates to THz devices technical field, more particularly to a kind of new F wave bands frequency tripler.
Background technology
Terahertz（THz）Ripple in a larger sense, refers to electromagnetic wave of the frequency in the range of 0.1THz-10THz, wherein
1THz=1000GHz, also it is believed that Terahertz frequency refers to the electromagnetic wave in the range of 0.3THz-3THz.THz ripples are in electromagnetic wave
Occupy very special position in frequency spectrum, THz technologies are a generally acknowledged very important intersection Disciplinary Frontiers of International Technology circle.F
Wave band refers to the electromagnetic frequency between 90GHz-140GHz.
F wave bands have very huge potential application in fields such as high-speed communications because its frequency is higher.To utilize this
Wave band, the frequency source of F wave bands need to be made, because its frequency is high, currently used is by low end frequency times based on the form of frequency multiplication
Multiply to the frequency range, wherein using Ka wave band frequency triplings, can be by frequency expansion to F wave bands.The frequency tripler of the form at present, its
Key electronic device uses GaAs Schottky diodes more, and GaAs Schottky diodes are because its mobility is higher, series resistance
Small, cut-off frequency is high, there is very extensive application in F wave bands and Terahertz frequency range, but GaAs Schottky diodes
Breakdown voltage is relatively low, the limited power capacity that can be carried.
GaN is third generation wide-band-gap semiconductor material, and its GaN material band gap is 3.4eV, relative to GaAs material band gaps
1.4eV, band gap is wider, and GaN has higher breakdown voltage, and is preferably dissipated because GaN material has relative to GaAs materials
Heat energy power, therefore GaN base Schottky diode can bear higher input power relative to GaAs based schottky diodes, and
And heat dispersion is more preferable.
Less to the research of GaN base HF schottky diode in the world, one is due to that material mobility is low, second, technique is answered
It is miscellaneous, F the wave bands even frequency multiplier of Terahertz frequency range are made based on GaN Schottky diode, from having not seen.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of new F wave bands frequency tripler, the frequency tripler it is resistance to
By power height, perfect heat-dissipating, better reliability.
In order to solve the above technical problems, the technical solution used in the present invention is：A kind of new F wave bands frequency tripler, its
It is characterised by：Including quartz base plate, GaN base higher cutoff frequency Schottky diode, radio frequency output waveguide and fundamental wave input waveguide,
The first transmission microstrip line on quartz base plate excessively arrives fundamental signal quartzy microstrip circuit across on fundamental wave input waveguide
On, the one end of the first transmission microstrip line through the second transmission microstrip line, low pass filter and substrate matched transmission line connects, substrate
The other end with transmission line is connected with the positive pole of GaN base higher cutoff frequency Schottky diode, GaN base higher cutoff frequency Schottky
The negative pole ground connection of diode；One end of output matching microstrip line is connected with the positive pole of GaN base higher cutoff frequency Schottky diode,
The other end is connected with one end of the excessive microstrip line of output end, and the excessive microstrip line of output end is across in radio frequency output waveguide, by institute
The harmonic signal needed is from quartzy microstrip circuit excessively to radio frequency output waveguide；The first transmission microstrip line, the second transmission are micro-
Band line, low pass filter, substrate matched transmission line, GaN base higher cutoff frequency Schottky diode, output matching microstrip line and defeated
Go out to hold excessive microstrip line to be located on the quartz base plate.
Further technical scheme is：The low pass filter is 5 ranks or 7 rank height impedance microstrip wave filters.
Further technical scheme is：The GaN base higher cutoff frequency Schottky diode includes four poles of GaN base two
Pipe, two of which is that two GaN base diodes in one group, one group are first connected, then two GaN bases two connected with another group
Pole pipe is in parallel.
Further technical scheme is：The thickness of quartz base plate is 30 microns to 75 microns.
Further technical scheme is：Quartz base plate is integrally placed between radio frequency output waveguide and fundamental wave input waveguide
Waveguide slot in, the groove width of waveguide slot is wider than quartz base plate 40 microns -60 microns.
It is using beneficial effect caused by above-mentioned technical proposal：The present invention uses higher cutoff frequency GaN base Schottky
For diode as frequency doubling non-linear's device, input and output use Waveguide-microbelt excessive circuit form, and input fundamental signal is excessive
Fundamental wave low pass filter is connect on to quartzy circuit, GaN base Schottky diode is reached after fundamental wave match circuit, is produced humorous three times
Ripple signal, triple-frequency harmonics reach the output of output waveguide end after output end match circuit, through micro-strip waveguide transitions.Wherein fundamental wave is low
Bandpass filter can prevent second harmonic and harmonic signal by fundamental wave input signal, and output end is subtracted using high waveguide is subtracted
The design size requirement of high waveguide can end the second harmonic frequency of fundamental wave.Advantage of the invention is that：Frequency doubling non-linear's device
Part uses GaN base higher cutoff frequency Schottky diode, and the cut-off frequency of GaN base diode is up to 0.8THz, its relative to
The Schottky diode of GaAs same anode junction areas, its tolerance power can increase by 3 dB-4dB；Device circuitry is non-equilibrium
Formula circuit design, device hot loop is more preferable, good heat dissipation effect；Device uses Zero-bias working, better reliability.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention；
Wherein：101st, radio frequency output waveguide 102, fundamental wave input waveguide 103, quartz base plate 104, first transmit micro-strip
Line 105, second transmits microstrip line 106, low pass filter 107, substrate matched transmission line 108, output matching microstrip line
109th, the excessive microstrip line 110 of output end, GaN base higher cutoff frequency Schottky diode.
Embodiment
With reference to the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground describes, it is clear that described embodiment is only the part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still the present invention can be with
It is different from other manner described here using other to implement, those skilled in the art can be without prejudice to intension of the present invention
In the case of do similar popularization, therefore the present invention is not limited by following public specific embodiment.
As shown in figure 1, the invention discloses a kind of new F wave bands frequency tripler, including high section of quartz base plate 103, GaN base
Only frequency Schottky diode 110, radio frequency output waveguide 101 and fundamental wave input waveguide 102.First on quartz base plate 103 passes
Defeated microstrip line 104 is across on fundamental wave input waveguide 102, by fundamental signal excessively on quartzy microstrip circuit；First transmission is micro-
It is connected with line 104 through the second transmission microstrip line 105, low pass filter 106 with one end of substrate matched transmission line 107, substrate
The other end with transmission line 107 is connected with the positive pole of GaN base higher cutoff frequency Schottky diode 110, GaN base higher cutoff frequency
The negative pole ground connection of Schottky diode 110；
One end of output matching microstrip line 108 is connected with the positive pole of GaN base higher cutoff frequency Schottky diode 110, separately
One end of one end microstrip line 109 excessive with output end is connected, and the excessive microstrip line 109 of output end is across in radio frequency output waveguide 101
On, by required harmonic signal from quartzy microstrip circuit excessively to radio frequency output waveguide 101；The first transmission microstrip line
104th, the second transmission microstrip line 105, low pass filter 106, substrate matched transmission line 107, GaN base higher cutoff frequency Schottky two
Pole pipe 110, output matching microstrip line 108 and the excessive microstrip line 109 of output end are located on the quartz base plate 103.
Principle：Fundamental wave input waveguide 102 introduces the high-power fundamental signal of Ka wave bands, and microstrip line 104 is transmitted by first,
By fundamental signal excessively on quartzy microstrip circuit, through the second transmission microstrip line 105 and low pass filter 106, wherein low pass filtered
Ripple device can be 5 ranks or 7 rank height impedance microstrip wave filters, for realizing the transmission of fundamental signal, while prevent secondary and three
Rd harmonic signal reaches GaN base higher cutoff frequency Schottky two to the leakage at fundamental wave waveguide end after substrate matched transmission line 107
Pole pipe 110, wherein diode both ends will be grounded, and realize good hot loop, GaN base higher cutoff frequency Schottky diode 110
Face-down bonding on a quartz substrate, is first connected using two tube cores, then in parallel in the same direction, in order to facilitate face-down bonding, among tube core
A pad can be made.It is non-due to diode when fundamental signal passes through GaN base higher cutoff frequency Schottky diode 110
Linear C-V characteristics, produce each harmonic, and wherein triple-frequency harmonics is transmitted to the excessive micro-strip of output end through output matching microstrip line 108
Line 109, by required harmonic signal excessively to radio frequency output waveguide 101, in order to prevent that second harmonic is defeated in output end
Go out, the frequency of second harmonic is ended in the front end of radio frequency output waveguide 101 using high waveguide form is subtracted.
The length and width of all microstrip lines needs to be set according to the actual conditions of device.The thickness of quartz base plate
Generally 30 microns to 75 microns, quartzy circuit is integrally placed between radio frequency output waveguide 101 and fundamental wave input waveguide 102
In waveguide slot, the width of waveguide slot, which reaches, can put down quartz base plate, groove width 50 microns of left sides wider than quartz base plate of general waveguide slot
It is right.
The present invention is used using higher cutoff frequency GaN base Schottky diode as frequency doubling non-linear's device, input and output
Waveguide-microbelt excessive circuit form, input fundamental signal is excessively to fundamental wave low pass filter is connect on quartzy circuit, through fundamental wave
With GaN base Schottky diode is reached after circuit, harmonic signal is produced, triple-frequency harmonics is after output end match circuit, warp
Micro-strip waveguide transitions reach the output of output waveguide end.Wherein fundamental wave low pass filter can prevent two by fundamental wave input signal
Subharmonic and harmonic signal, for output end using high waveguide is subtracted, fundamental wave can be ended by subtracting the design size requirement of high waveguide
Second harmonic frequency.Advantage of the invention is that：Frequency doubling non-linear's device uses GaN base higher cutoff frequency Schottky diode,
The cut-off frequency of GaN base diode is up to 0.8THz, and, relative to the Schottky diode of GaAs same anode junction areas, its is resistance to for it
It can be increased by 3 dB-4dB by power；Device circuitry is unbalanced circuit design, and device hot loop is more preferable, good heat dissipation effect；
Device uses Zero-bias working, better reliability.
Claims (3)
- A kind of 1. new F wave bands frequency tripler, it is characterised in that：Including quartz base plate (103), GaN base higher cutoff frequency Xiao Te Based diode (110), radio frequency output waveguide (101) and fundamental wave input waveguide (102), the first transmission on quartz base plate (103) Microstrip line (104) is across on fundamental wave input waveguide (102), by fundamental signal excessively on quartzy microstrip circuit, the first transmission The one end of microstrip line (104) through the second transmission microstrip line (105), low pass filter (106) and substrate matched transmission line (107) connects Connecing, the other end of substrate matched transmission line (107) is connected with the positive pole of GaN base higher cutoff frequency Schottky diode (110), The negative pole ground connection of GaN base higher cutoff frequency Schottky diode (110)；One end of output matching microstrip line (108) is high with GaN base The positive pole connection of cut-off frequency Schottky diode (110), the other end are connected with one end of the excessive microstrip line of output end (109), The excessive microstrip line of output end (109) is across in radio frequency output waveguide (101), by required harmonic signal from quartzy micro-strip electricity Degree of passing by is to radio frequency output waveguide (101)；The first transmission microstrip line (104), the second transmission microstrip line (105), low pass filtered Ripple device (106), substrate matched transmission line (107), GaN base higher cutoff frequency Schottky diode (110), output matching microstrip line (108) it is located at the excessive microstrip line of output end (109) on the quartz base plate (103)；The GaN base higher cutoff frequency Schottky The cut-off frequency of diode (110) is up to 0.8THz；Wherein, the thickness of the quartz base plate (103) is 30 microns to 75 microns；The quartz base plate (103) is integrally placed to In waveguide slot between radio frequency output waveguide (101) and fundamental wave input waveguide (102), the groove width of waveguide slot compares quartz base plate (103) it is wide 40 microns -60 microns.
- 2. new F wave bands frequency tripler according to claim 1, it is characterised in that：The low pass filter (106) is 5 Rank or 7 rank height impedance microstrip wave filters.
- 3. new F wave bands frequency tripler according to claim 1, it is characterised in that：The GaN base higher cutoff frequency Xiao Te Based diode (110) includes four GaN base diodes, and two of which is that two GaN base diodes in one group, one group are first gone here and there Connection, then the two GaN base diodes in parallel connected with another group.
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| CN201510360823.XA CN104935254B (en) | 2015-06-26 | 2015-06-26 | New F wave bands frequency tripler |
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| CN201510360823.XA CN104935254B (en) | 2015-06-26 | 2015-06-26 | New F wave bands frequency tripler |
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| CN104935254B true CN104935254B (en) | 2018-04-06 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026927B (en) * | 2016-07-29 | 2019-08-20 | 中国电子科技集团公司第十三研究所 | Two frequency multiplication unbalanced circuit of the Terahertz of resistance to power |
| CN106160668B (en) * | 2016-07-29 | 2023-05-30 | 中国电子科技集团公司第十三研究所 | Power-resistant terahertz frequency-tripling type balance frequency doubling circuit |
| CN106549637A (en) * | 2016-10-21 | 2017-03-29 | 北京无线电测量研究所 | A kind of frequency tripler of Terahertz frequency range |
| CN106992792B (en) * | 2017-05-23 | 2023-06-27 | 中国电子科技集团公司第十三研究所 | 220GHz terahertz transmitter based on MEMS technology |
| CN107017902B (en) * | 2017-05-23 | 2022-11-29 | 中国电子科技集团公司第十三研究所 | 220GHz receiver based on MEMS technology |
| CN107359861B (en) * | 2017-06-01 | 2023-06-13 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | High-order odd harmonic THz source frequency multiplier |
| CN108880475A (en) * | 2018-06-27 | 2018-11-23 | 电子科技大学 | A kind of SIW transmission line diode frequency multiplier |
| CN109346405B (en) * | 2018-11-23 | 2021-12-03 | 江苏新广联科技股份有限公司 | Preparation method of GaN-based SBD flip chip |
| CN111384898B (en) * | 2020-04-07 | 2023-09-15 | 中国工程物理研究院电子工程研究所 | Multimode schottky frequency multiplication structure |
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| CN103400865A (en) * | 2013-07-31 | 2013-11-20 | 中国电子科技集团公司第十三研究所 | Polarization doping-based GaN Schottky diode |
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