CN111384898B - Multimode schottky frequency multiplication structure - Google Patents

Multimode schottky frequency multiplication structure Download PDF

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Publication number
CN111384898B
CN111384898B CN202010265463.6A CN202010265463A CN111384898B CN 111384898 B CN111384898 B CN 111384898B CN 202010265463 A CN202010265463 A CN 202010265463A CN 111384898 B CN111384898 B CN 111384898B
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circuit
schottky
microstrip
multimode
harmonic
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CN111384898A (en
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田遥岭
何月
蒋均
黄昆
陈鹏
李理
岑冀娜
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Institute of Electronic Engineering of CAEP
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
    • H03B19/16Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes

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Abstract

The invention discloses a multimode Schottky frequency doubling structure, which comprises an input waveguide matching structure, two Schottky diodes, a T-shaped suspension microstrip circuit and an output probe structure, wherein the input waveguide matching structure is a rectangular structure; the waveguide matching structure is used for matching the input impedance of the circuit, and the two Schottky diodes are respectively and oppositely bonded to the microstrip line at the bifurcation of the T-shaped suspended microstrip circuit; the suspended microstrip circuit comprises an impedance matching circuit and a suspended microstrip T-shaped junction, and the second harmonic and the third harmonic of the Schottky diode are split into two paths for output through the suspended microstrip T-shaped junction. According to the invention, the complex matched filter circuit at the output end can be omitted by utilizing the harmonic suppression characteristic, so that the power consumed in the matched filter circuit is reduced; and secondly, the characteristics of dual-band output of the circuit can greatly simplify the complexity and cost of a link, and provide homologous second and third harmonics for the fields of communication and imaging application.

Description

Multimode schottky frequency multiplication structure
Technical Field
The invention belongs to the field of design of terahertz frequency band Schottky diode frequency multipliers, and particularly relates to a multimode Schottky frequency multiplier structure.
Background
The multimode, multiband millimeter wave products have wide application in the fields of mobile communication, radar systems, and the like. Devices such as multi-passband antennas, filters, amplifiers, etc. are currently under tremendous development. The current mainstream schottky frequency multiplier circuit belongs to a circuit design of a single frequency band, and the power output of the second harmonic or the third harmonic is realized by utilizing the characteristics of the circuit.
The conventional balanced frequency doubler adopts parallel diodes and mode isolation of a transmission line to realize suppression of odd harmonics and output of second harmonics, as shown in fig. 1. Similarly, the traditional tripler almost adopts a circuit to restrain even harmonic wave, so that single odd harmonic wave output is realized. However, such single output frequency doubling circuits can double the link when multiple local oscillator signals are required, resulting in a double increase in circuit size, complexity and cost.
Disclosure of Invention
In order to overcome the technical defects, the invention provides a multimode Schottky frequency doubling structure, which is used for not simply carrying out odd or even harmonic suppression, but providing different output paths for second harmonic and third harmonic, so that the frequency multiplier circuit is simultaneously provided with output ports of the second harmonic and the third harmonic, and realizes a multimode working mode of simultaneously outputting the second harmonic and the third harmonic, thereby being capable of obtaining homologous second harmonic and third harmonic.
The technical scheme of the invention is as follows:
a multimode schottky doubled frequency structure characterized by: the device comprises an input waveguide matching structure, a T-shaped suspension microstrip circuit and an output probe structure;
the input waveguide matching structure is used for matching the input impedance of the circuit;
the T-shaped suspension microstrip circuit comprises a suspension microstrip T-shaped junction circuit and an impedance matching circuit, wherein two opposite Schottky diodes are bonded on a microstrip line at the bifurcation of the suspension microstrip T-shaped junction circuit, and each Schottky diode comprises a first diode and a second diode; one end of the first diode is grounded, and one end of the second diode is virtually grounded on the microstrip line through an open-circuit branch line; the suspension microstrip T-shaped junction is used for outputting the second harmonic of the two Schottky diodes in a shunting mode along the direction of the impedance matching circuit, and outputting the third harmonic of the two Schottky diodes in a shunting mode along the open circuit branch node line.
The waveguide of the input waveguide matching structure is processed by metal such as aluminum or copper.
The waveguide of the input waveguide matching structure is TE 10 A mode.
And only a quasi-TEM mode exists on the microstrip line of the impedance matching section of the T-shaped suspension microstrip circuit.
The microstrip line can be processed by selecting thin film substrates such as quartz, alumina ceramics and aluminum nitride ceramics, and the thickness of the substrate is thinner and better.
The second Schottky diode is adhered to the microstrip line according to the same polarity as the first Schottky diode, and the tube junctions of the two Schottky diodes face the same direction.
Meanwhile, the two Schottky diodes are located near 1/4 wavelength of the short circuit surface of the input waveguide.
Further, the schottky diode may be implemented by using a conventional conductive adhesive process or a soldering process.
The output probe structure adopts an integrated direct current feed port; or on the premise of ensuring the inhibition to parasitic harmonic waves, the direct current path is realized through the gold wire jumper.
Through above-mentioned structural design's schottky frequency multiplication structure, its main theory of operation does:
the input electromagnetic wave operating in TE in the waveguide 10 The mode is excited to each subharmonic after passing through the Schottky diode pair, and then the second harmonic and the third harmonic of the Schottky diode are separated into two paths at a T-shaped junction.
The beneficial effects of the invention are as follows:
the invention utilizes the intrinsic inhibition of the frequency doubling circuit to realize the frequency doubling circuit structure of the simultaneous output of the second harmonic and the third harmonic, and particularly utilizes the harmonic inhibition characteristic of the circuit to omit a complex matched filter circuit at the output end, thereby reducing the power consumed in the matched filter circuit; the characteristics of dual-band output of the circuit can be utilized to greatly simplify the link complexity and cost, and provide homologous second and third harmonics for the communication and imaging application fields.
Drawings
Fig. 1 is a schematic diagram of a conventional balanced frequency doubler.
Fig. 2 is a schematic circuit structure of the present invention.
Detailed Description
A multimode Schottky frequency doubling structure is shown in fig. 2, and comprises an input waveguide matching structure, a T-shaped suspended microstrip circuit and an output probe structure.
The input waveguide matching structure is used for matching the input impedance of the circuit.
The T-shaped suspension microstrip circuit comprises a suspension microstrip T-shaped junction circuit and an impedance matching circuit.
The T-shaped junction circuit of the suspended microstrip is provided with two opposite Schottky diodes, namely a first diode and a second diode.
One end of the first diode is adhered to the microstrip line, and the other end of the first diode is grounded; one end of the second diode is adhered to the bifurcation of the microstrip line, and the other end of the second diode is virtually grounded on the microstrip line through an open-circuit branch line.
The suspension microstrip T-shaped junction is used for shunting the second harmonic of the two Schottky diodes along the direction of the impedance matching circuit, shunting the third harmonic of the two Schottky diodes along the open-circuit branch line and dividing the third harmonic into two paths for output.
The waveguide matching structure is used for matching the input impedance of the circuit, and the waveguide can be made of metals such as aluminum, copper and the like.
The two Schottky diodes are positioned at the branching part of the T-shaped suspension microstrip circuit and are also near 1/4 wavelength of the short circuit surface of the input waveguide, and diode junctions face the same direction. Further, the schottky diode may be implemented by using a conventional conductive adhesive process or a soldering process.
The output probe structure adopts an integrated direct current feed port, and a direct current path can be realized through a golden wire jumper, provided that the inhibition of parasitic harmonic wave is ensured.
The microstrip line can be processed by selecting thin film substrates such as quartz, alumina ceramics and aluminum nitride ceramics, and the thickness of the substrate is thinner and better.
In the above structure, the input electromagnetic wave operates in TE in the waveguide 10 Mode, after passing through the diode pair, excites each subharmonic. The field directions of the most dominant second and third harmonics are shown in fig. 2, and the second and third harmonics are split into two paths at the T-junction. Since the suspended microstrip line in region 1 has only a quasi-TEM mode, coincides with the field mode of the second harmonic and suppresses the third harmonic, the second harmonic will pass out along the path of region 1. While the third harmonic will pass the output along the path of region 2 (the second harmonic is inherently suppressed in this path). Therefore, the parity mode shunt mode of the circuit enables the secondary harmonic and the third harmonic in the frequency multiplier circuit to be output according to different paths, and the dual-mode frequency multiplier circuit capable of outputting the secondary harmonic and the third harmonic simultaneously is realized.
As can be seen from the above embodiments, the frequency doubling circuit structure of the present invention can be seen as compared with the conventional structure (fig. 2 and 1):
(1) Balance is different: the conventional balanced frequency multiplier circuit shown in fig. 1, which utilizes mode isolation of the waveguide field mode and the suspended microstrip field mode to achieve odd harmonic suppression, is essentially a single-mode balanced structure; the circuit structure shown in fig. 2 is a balanced structure which realizes odd harmonic suppression of the second harmonic channel by utilizing waveguide mode and microstrip mode isolation and realizes even harmonic suppression of the third harmonic channel by a diode, and is multimode in nature.
(2) The output modes are different: the circuit of fig. 1 uses a single-mode balanced structure, and can only output the working frequency band of the second harmonic, belonging to a single-mode working state; the circuit structure of the invention shown in fig. 2 can simultaneously generate a second harmonic signal and a third harmonic signal by the same module, and the output signal has two modes and belongs to an upper mode working state.

Claims (8)

1. A multimode schottky doubled frequency structure characterized by: the device comprises an input waveguide matching structure, a T-shaped suspension microstrip circuit and an output probe structure;
the input waveguide matching structure is used for matching the input impedance of the circuit;
the T-shaped suspension microstrip circuit comprises a suspension microstrip T-shaped junction circuit and an impedance matching circuit, wherein two opposite Schottky diodes are bonded on a microstrip line at the bifurcation of the suspension microstrip T-shaped junction circuit, and each Schottky diode comprises a first diode and a second diode; one end of the first diode is grounded, and one end of the second diode is virtually grounded on the microstrip line through an open-circuit branch line; the suspension microstrip T-shaped junction is used for outputting the second harmonic of the two Schottky diodes in a shunting way along the direction of the impedance matching circuit, and outputting the third harmonic of the two Schottky diodes in a shunting way along the open circuit branch node line;
the waveguide of the input waveguide matching structure is TE 10 A mode.
2. The multimode schottky doubled structure of claim 1 wherein: the waveguide of the input waveguide matching structure is made of aluminum or copper.
3. The multimode schottky doubled structure of claim 1 wherein: and only a quasi-TEM mode exists on the microstrip line of the impedance matching section of the T-shaped suspension microstrip circuit.
4. The multimode schottky doubled structure of claim 1 wherein: the microstrip line is made of quartz, alumina ceramic or aluminum nitride ceramic.
5. The multimode schottky doubled structure of claim 1 wherein: the second Schottky diode is adhered to the microstrip line according to the same polarity as the first Schottky diode, and the tube junctions of the two Schottky diodes face the same direction.
6. The multimode schottky doubled structure of claim 1 or 5 wherein: the two Schottky diodes are located near 1/4 wavelength of the input waveguide short-circuit surface.
7. The multimode schottky doubled structure of claim 1 wherein: the output probe structure adopts an integrated direct current feed port.
8. The multimode schottky doubled structure of claim 1 wherein: the output probe structure realizes a direct current path through a gold wire jumper.
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CN114844468A (en) * 2022-05-12 2022-08-02 中国工程物理研究院电子工程研究所 Novel balanced Schottky quadruple frequency structure and using method thereof

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