CN108768303A - Application of the molybdenum disulfide in making odd harmonic microwave multiplier - Google Patents
Application of the molybdenum disulfide in making odd harmonic microwave multiplier Download PDFInfo
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- CN108768303A CN108768303A CN201810573484.7A CN201810573484A CN108768303A CN 108768303 A CN108768303 A CN 108768303A CN 201810573484 A CN201810573484 A CN 201810573484A CN 108768303 A CN108768303 A CN 108768303A
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- molybdenum disulfide
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/16—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes
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Abstract
The invention discloses a kind of molybdenum disulfide in the application for preparing odd harmonic microwave multiplier, the odd harmonic microwave multiplier includes cavity, is located at the input coaxial fitting at cavity both ends and exports coaxial fitting and the matched cover board of cavity, molybdenum disulfide frequency multiplier high frequency substrate is equipped in the cavity, the molybdenum disulfide frequency multiplier high frequency substrate includes high frequency substrate, the microstrip line being connect respectively with microstrip line input coaxial fitting and output coaxial fitting is arranged on high frequency substrate, it is equipped with gap between the microstrip line, and is equipped with molybdenum disulfide between gap.Present invention utilizes the good nonlinear microwave properties of molybdenum disulfide, it is to be suitable for the nonlinear devices such as frequency multiplier, using frequency multiplier made of molybdenum disulfide, non-linear behaviour is good, it not will produce echo-signal, circuit design is very simple, and yupin effect is good again, and frequency multiplication loss is suitable with fundamental wave three times.
Description
Technical field
The present invention relates to microwave regimes more particularly to a kind of molybdenum disulfide to prepare answering for odd harmonic microwave multiplier
With.
Background technology
Microwave, millimeter wave frequency source are widely used in the systems such as radar, communication, guidance, test equipment.And frequency multiplier is frequency
One of important component in rate source.In microwave, millimeter wave frequency band, the passive frequency multiplier of Two-port netwerk is widely used in a times frequency source design
In, it is more preferable than the performance of active oscillator in the passive frequency multiplier of Two-port netwerk of stability, noise etc., high band.And it is existing
In technology, nonlinear resistance, nonlinear reactance frequency multiplication, graphene frequency multiplication are mainly used.
The shg efficiency of nonlinear resistance is relatively low, and attainable peak efficiency is 1/N2,Fundamental wave loss is caused to be far longer than three
Secondary frequency multiplication loss.
Nonlinear reactance is usually used in low order frequency multiplication, in actual circuit, due to matched not good and senior diode damage
Consumption, frequency multiplication loss exist always, cause design structure complicated.
In recent years, graphene becomes next due to performances such as electric traction rate height, good heat conductivities, being deemed likely to
For electronic material, and become a hot research direction, the shortcomings that graphene is：Echo-signal is will produce, so we need
Be total reflection state to fundamental wave and the harmonic component that need to recycle, be totally reflected for by fundamental wave and the harmonic component that need to be recycled through graphene
It is reflected back input reflection network, leads to frequency multiplier complex structural designs.So the frequency multiplication loss of graphene frequency multiplier is higher, work
It is inefficient, significantly limit the usage scenario of graphene frequency multiplier.
Invention content
The purpose of the present invention be that provide it is a kind of solve the above problems, take full advantage of molybdenum disulfide nonlinear micro-
Wave property is suitble to application of the molybdenum disulfide of the nonlinear devices such as frequency multiplier in making odd harmonic microwave multiplier.
To achieve the goals above, the technical solution adopted by the present invention is such：Molybdenum disulfide is making odd harmonic
Application in microwave multiplier.
Molybdenum disulfide has good optical nonlinearity, is mainly used in diode, the fields such as field-effect tube, such as document
Observation of Intense Second Harmonic Generation from MoS2Atomic Crystals are explained
The optical nonlinearity for having stated molybdenum disulfide provides chance for the new opplication in photoelectric device；Document Ultra-strong
Nonlinear optical processes and trigonal warping in MoS2layers reports 1L-MoS2 has
Very strong optical nonlinearity, meanwhile, temporarily without open report MoS2The nonlinear microwave property of two-dimensional material, if be suitble to
The nonlinear devices such as frequency multiplier do not obtain final conclusion also.Therefore, this invention is ground in the way of single layer MoS2 loaded microstrips gap
Study carefully odd harmonic microwave multiplier.Molybdenum disulfide is under electromagnetic field excitation, by output fundamental wave and its harmonic.Molybdenum disulfide two
Port frequency multiplier circuit has the function of that natural even-order harmonic inhibits, and output frequency component only includes fundamental wave and odd harmonic, is suitble to
Non-linear frequency device, such as frequency multiplier etc..
As preferred：The input that the odd harmonic microwave multiplier includes cavity, is located at cavity both ends coaxially connects
Head and output coaxial fitting, with the matched cover board of cavity, equipped with molybdenum disulfide frequency multiplier high frequency substrate in the cavity, described two
Molybdenum sulfide frequency multiplier high frequency substrate includes high frequency substrate, is arranged on high frequency substrate and inputs coaxial fitting and defeated with microstrip line respectively
Go out the microstrip line of coaxial fitting connection, gap is equipped between the microstrip line, and be equipped with molybdenum disulfide between gap.
As preferred：The production method of the molybdenum disulfide frequency multiplier high frequency substrate is：
(1) according to input signal and frequency multiplication number, output frequency is obtained；
(2) according to input frequency and output frequency design microstrip line and micro-strip gap；
(3) molybdenum disulfide is transferred on micro-strip gap.
Compared with the prior art, the advantages of the present invention are as follows：It is compared with graphene, graphene generates echo-signal, causes
Design is complicated, and the loss of triple-frequency harmonics frequency multiplication is lost less than the frequency multiplication of odd harmonic, and in the present invention, it is non-thread using molybdenum disulfide
Property performance it is good, not will produce echo-signal, circuit design is very simple, and yupin effect is good again, three times frequency multiplication loss and fundamental wave phase
When.
Description of the drawings
Fig. 1 is 1 structural schematic diagram of embodiment；
Fig. 2 is 1 circuit diagram of embodiment；
Fig. 3 is 1 design flow diagram of embodiment；
Fig. 4 is 1 circuit diagram of comparative example；
Fig. 5 is the design flow diagram than embodiment 1；
Fig. 6 is the ratio between molybdenum disulfide frequency tripling and fundamental wave loss schematic diagram in embodiment 1.
Fig. 7 is the ratio between graphene frequency tripling and fundamental wave loss schematic diagram in comparative example 1；
Fig. 8 is 2 nonlinear resistance frequency multiplication derivation circuit of comparative example；
Fig. 9 is 2 nonlinear reactance frequency multiplication derivation circuit of comparative example.
In figure：1, cover board；2, high frequency substrate；3, cavity；4, coaxial fitting is inputted；5, coaxial fitting is exported；6, microstrip line；
7, input reflection network；8, output reflection network；9, graphene；10, molybdenum disulfide.
Specific implementation mode
The present invention will be further described with reference to the accompanying drawings.
Embodiment 1：Referring to Fig. 1, Fig. 2, Fig. 3, this example demonstrates molybdenum disulfide 10 to make odd harmonic microwave times
Application in frequency device.The present embodiment takes full advantage of 10 nonlinear microwave property of molybdenum disulfide.
Wherein：The odd harmonic microwave multiplier includes cavity 3, is located at the input coaxial fitting 4 at 3 both ends of cavity
With output coaxial fitting 5 and 3 matched cover board 1 of cavity, the cavity 3 is interior to be equipped with 10 frequency multiplier high frequency substrate 2 of molybdenum disulfide,
10 frequency multiplier high frequency substrate 2 of the molybdenum disulfide is inputted with microstrip line 6 including high frequency substrate 2, setting on high frequency substrate 2 respectively
The microstrip line 6 that coaxial fitting 4 and output coaxial fitting 5 connect, gap is equipped between the microstrip line 6, and two sulphur are equipped between gap
Change molybdenum 10.
The production method of 10 frequency multiplier high frequency substrate 2 of the molybdenum disulfide is：
(1) according to input signal and frequency multiplication number, output frequency is obtained；
(2) according to input frequency and output frequency design microstrip line 6 and micro-strip gap；
(3) molybdenum disulfide 10 is transferred on micro-strip gap.
Comparative example 1：
Referring to Fig. 4 and Fig. 5, a kind of 9 odd harmonic frequency multiplier of graphene, including 3 component of cavity and cover board 1, the cavity 3
Component includes cavity 3 and is located at the input coaxial fitting 4 at 3 both ends of cavity and output coaxial fitting 5, further includes graphene 9
Frequency multiplier high frequency substrate 2；9 frequency multiplier high frequency substrate 2 of the graphene include high frequency substrate 2, be arranged it is defeated on high frequency substrate 2
Enter reflective network 7, graphene 9 and output reflection network 8, the input reflection network 7 and output reflection network 8 are located at stone
The front-end and back-end of black alkene 9；
If output signal is fundamental wave f0, frequency multiplication number is N, and wherein the output signal after frequency multiplication is Nf0, the signal that need to recycle
Frequency component is (2n+1) f0, wherein n=1,2,3,4 ... and (2n+1) ≠ N；
The input reflection network 7 is to f0It is ground state to the signal frequency component that need to be recycled for matching status；
The output reflection network 8 is to Nf0It is total reflection shape to fundamental wave and the harmonic component that need to be recycled for matching status
State, the total reflection are that fundamental wave and the harmonic component that need to be recycled are reflected back input reflection network 7 through graphene 9.
The input reflection network 7 and output reflection network 8 are using the height impedance resonance in parallel of 50 ohm microstrip 6 circuit
Mode realize harmonic component reflection recycling.
The design method of 9 odd harmonic frequency multiplier of graphene is：
(1) according to input signal and frequency multiplication number, output frequency is obtained；
(2) signal frequency component of recycling is determined；
(3) design input reflection network 7 and output reflection network 8, obtain 9 frequency multiplier high frequency substrate 2 of graphene；
(4) 9 frequency multiplier of graphene with 9 frequency multiplier high frequency substrate 2 of graphene is obtained；
(5) external structures such as cavity 3, cover board 1 are designed, 9 odd harmonic frequency multiplier of graphene is obtained.
In conjunction with the embodiments 1 and comparative example 1 known to：Graphene 9 will produce echo-signal, so we need to fundamental wave
It is total reflection state with the harmonic component that need to be recycled, causes to must be provided with input reflection network 7, output reflection network 8, causes again
Frequency device complex structural designs, frequency multiplication loss is higher, and working efficiency is not high.
And in the present invention, since 10 non-linear microwave property of molybdenum disulfide is good, it not will produce echo-signal, circuit design is non-
It is often simple, and yupin effect is good again, has the function of that natural even-order harmonic inhibits, output frequency component only includes that fundamental wave and odd times are humorous
Wave, so circuit design is simple.
Referring to Fig. 2 and Fig. 4, from the comparison of Fig. 2 and Fig. 4 it is found that embodiment 1 uses molybdenum disulfide 10, three times frequency multiplication and base
Wave the output phase is worked as, and minor matters recovery section is reduced.As driving frequency 1GHz, exciting power 18dBm, the frequency multiplication of 3 subharmonic is damaged
It is suitable that consumption with first harmonic obtains frequency multiplication loss.Comparative example 1 uses graphene 9, and the frequency multiplication three times of 9 frequency multiplier of graphene is damaged
Consumption is the half of the spare unit loss of first harmonic.
Referring to Fig. 6 and Fig. 7, from figure, 6 and Fig. 7 comparisons it is found that under identical frequency, frequency tripling and the fundamental wave of graphene 9 are lost
The ratio between 0.001-0.006, difference 25dBm or so；And the ratio between the frequency tripling of molybdenum disulfide 10 and fundamental wave loss are 0.1-0.4, with
Fundamental wave is suitable.
Comparative example 2：Referring to Fig. 8, using nonlinear resistance frequency multiplication, the shg efficiency of all nonlinear resistance frequency multipliers
It is square times decline according to frequency multiplication number.It is to indicate, no matter designer uses which kind of structure and software to nonlinear resistance
Frequency multiplication is designed, secondly the peak efficiency of frequency multiplication is less than 25%；Frequency tripling is less than 11.1%；Quadruple is less than 5.25%；With
This analogizes.
By power supply Vs driving resistance R.Circuit aft section is multiple bandpass filters, which is humorous for being isolated
Wave, output power.Again it is defeated as frequency be W when, n times frequency multiplier is the nth harmonic of fundamental wave, output frequency nW.
Higher to power requirement, or require under broadband condition, we when frequently with nonlinear resistance frequency multiplication.
Its advantage is that its stabilization and broader bandwidth.But its drawback is that its shg efficiency is relatively low, therefore
It is universal using no varactor multiolier.But in millimeterWave stage, nonlinear reactance frequency multiplier are also unsatisfactory for
Manly-Rowe formula, therefore its efficient advantage is also unlike so apparent in microwave stage.Such as Fig. 1, it is in input frequency
When ω, n times frequency multiplier is the nth harmonic of fundamental wave, and output frequency is n ω.The input power of nonlinear resistance frequency multiplication is reacted
The inequality of relationship between P1 and output power Pn, referred to as Page-Pantell inequality.
Voltage and current on resistance R can be expressed as with fourier series：
Wherein Vn and In are：
Voltage v (t) and electric current i (t) is real function, so Vn=V-n*
And In=I-n*.Therefore, nth harmonic power can be obtained by the following formula：
N2In* is multiplied by simultaneously to the formula both sides (1-1), and sums and can obtain：
Ask local derviation that can obtain on the both sides formula (1-2)：
Then it brings formula (1-6) into, obtains：
V (0)=v (T) and i (0)=i (T) again.Then i (t) also has periodically, so formula (1-8) partial derivative of t
Middle right end first item is constantly equal to 0.
Then formula (1-8) can be simplified, and combine formula (1-5), can obtain：
For positive nonlinear resistance, the integral of formula (1-9) is always larger than zero.So can obtain：
Connecting resistance loads in the frequency of fundamental frequency and required overtone order n, and reactive load is connect on remaining harmonic wave,
Then formula (1-10) can be reduced to P1+n2Pn>0, and input power P1 is more than zero, and harmonic power Pn<0, then non-linear electricity
Hindering frequency multiplier maximal efficiency is：
Formula (1-11) indicates the shg efficiency of all nonlinear resistance frequency multipliers, be according to frequency multiplication number square times under
Drop.It is to indicate, no matter designer is designed nonlinear resistance frequency multiplier using which kind of structure and software, varactor doubler
Peak efficiency be less than 25%；Frequency tripler is less than 11.1%；Quadrupler is less than 6.25%；And so on.
Comparative example 3：Referring to Fig. 9, using nonlinear reactance frequency multiplication, in nonlinear reactance frequency multiplier, perfect condition
Lower shg efficiency can reach 100%.But in actual circuit, due to matched not good and senior diode loss,
Frequency multiplication loss exists always.
By power supply Vs1 and Vs2 driving capacitance C.Circuit aft section is multiple bandpass filters, the filter be for every
From harmonic wave, output power.
Nonlinear reactance frequency multiplier can be divided into two major classes：Diode frequency multiplication and transistor frequency multiplication.Diode frequency multiplication is common
Have varactor and snap-off diode.The former is usually used in low order frequency multiplication, and efficiency is higher, by nonlinear reactance frequency multiplication principle
Manly-Rowe formula, can ideally reach 100%.Snap-off diode is usually used in high order frequency, due to varactor
High Degree Frequency Multiplier needs idle circuit to realize, snap-off diode is simpler on circuit.
If steady-state sine voltage wave is loaded on varactor, current-voltage waveform will be distorted, to
Generate harmonic component.The size of harmonic component, the nonlinear degree with diode have prodigious relationship.
As shown in figure 9, the Manly-Rowe formula of nonlinear reactance frequency multiplication illustrate input power and go out between power
Relationship.Wherein, by source Vs1 and Vs2 driving capacitance C.Circuit aft section is multiple bandpass filters, the filter be for every
From harmonic wave, output needs power.
Manly-Rowe formula indicate：For any lossless nonlinear reactance element, power conservation.The relational expression can
For oscillator, the frequency multiplication frequency converter of parameter amplifier and microwave or even light wave frequency range.Generally the formula is used to carry out power
The budget of gain and frequency multiplication conversion efficiency.
In nonlinear reactance frequency multiplier, ideally shg efficiency can reach 100%.But in actual circuit,
Due to matched not good and diode itself loss, frequency multiplication loss exists always.
Claims (1)
1. application of the molybdenum disulfide in making odd harmonic microwave multiplier.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110311628A (en) * | 2019-06-14 | 2019-10-08 | 成都理工大学 | Based on the graphene even-order harmonic frequency multiplier and design method under direct current biasing |
| CN111240123A (en) * | 2020-03-10 | 2020-06-05 | 西北工业大学 | Optical frequency converter of optical fiber integrated layered gallium selenide nanosheet and preparation method |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110311628A (en) * | 2019-06-14 | 2019-10-08 | 成都理工大学 | Based on the graphene even-order harmonic frequency multiplier and design method under direct current biasing |
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| CN111240123A (en) * | 2020-03-10 | 2020-06-05 | 西北工业大学 | Optical frequency converter of optical fiber integrated layered gallium selenide nanosheet and preparation method |
| CN111240123B (en) * | 2020-03-10 | 2024-03-22 | 西北工业大学 | Optical frequency converter of optical fiber integrated layered gallium selenide nano-sheet and preparation method thereof |
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