CN107888149B - Harmonic mixing frequency multiplier circuit - Google Patents
Harmonic mixing frequency multiplier circuit Download PDFInfo
- Publication number
- CN107888149B CN107888149B CN201711215491.1A CN201711215491A CN107888149B CN 107888149 B CN107888149 B CN 107888149B CN 201711215491 A CN201711215491 A CN 201711215491A CN 107888149 B CN107888149 B CN 107888149B
- Authority
- CN
- China
- Prior art keywords
- line
- microstrip
- frequency
- radio frequency
- local oscillator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Transmitters (AREA)
- Superheterodyne Receivers (AREA)
Abstract
A harmonic mixing frequency multiplication circuit comprises two couplers, a pair of Schottky diodes, four sections of microstrip open lines, a section of via hole grounding microstrip line and a microstrip low-pass filter, wherein the harmonic mixing function and the frequency multiplication function are realized by adopting the pair of Schottky diodes, the harmonic mixer and the frequency multiplier adopted by the existing receiving and transmitting system are replaced, the structure is simple, the realization is easy, the integration level and the reliability of the system are improved, the required local oscillation frequency is only half of the local oscillation frequency of fundamental wave mixing, the local oscillation frequency can be greatly reduced, the performance of local oscillation signals is improved, and the cost is effectively reduced, so the harmonic mixing frequency multiplication circuit can be applied to a microwave millimeter wave receiving and transmitting system.
Description
Technical Field
The invention relates to the technical field of microwave and millimeter wave, in particular to a harmonic mixing frequency multiplication circuit.
Background
As the frequency increases, the performance of the oscillation source decreases, and to solve this problem, the transceiving system often adopts a harmonic mixer technology and a frequency multiplier technology. However, the separate harmonic mixer and frequency multiplier will result in a complex circuit, increase cost and be even more disadvantageous for system integration.
The database search in the prior art is carried out at home and abroad. The "microwave and millimeter wave fourth harmonic mixer" of patent application No. 02107141.1, published 2003, 9/24. The invention introduces a fourth harmonic mixer based on a diode pair, and introduces a microstrip compact resonance unit technology on the basis of the traditional harmonic mixer structure, so that the mixer has better idler suppression and lower conversion loss. However, the invention patent only shows the parallel output ports of the diode pairs, and does not show the series output structure or scheme of the diode pairs.
The patent application number is 201320412983.0, and the publication date is 2013, 12 months and 25 days. A multi-functional frequency multiplier based on an antiparallel diode pair is disclosed, which is capable of outputting a frequency-doubled signal and a frequency-tripled signal simultaneously. However, the patent only shows the working state under the excitation of a single signal, and does not show the working state under the excitation of a double signal. Meanwhile, the patent does not give a blocking structure or scheme adopted by a signal feed-in diode pair, and does not give an intermediate frequency output structure or output scheme.
The patent application No. 201410619126.7 "terahertz frequency-doubling mixer based on monolithic integrated circuit" published on 3/25/2015. A harmonic mixer is described which uses a frequency multiplied output signal as a local oscillator, and this patent uses two types of diodes, one for frequency multiplication and the other for harmonic mixing. However, this patent does not show a structure or scheme for frequency doubling output. In addition, the two non-linear diodes adopted in the patent are respectively used for harmonic mixing and frequency doubling, so that the circuit structure of the patent is relatively complex.
Quan Xue in IEEE TRANSACTIONS MICROWAVE THEORY AND TECHNIQUES, VOL, 51, number 5, MAY 2003 "named" Low Conversion-Low wavelength Mixers Incorporating CMRC for Millimeter-Wave Applications "proposes a Low Loss Millimeter Wave Fourth harmonic mixing circuit based ON Schottky diode pairs, which utilizes the specific harmonic rejection characteristics of the antiparallel diode pairs AND the band rejection characteristics of the CMRC to make the structure have the good characteristic of idler rejection. However, since this structure focuses on the suppression of the idler to obtain good harmonic mixing performance, this structure does not realize a device having both the harmonic mixing function and the radio frequency function.
The above-identified papers and patents describe the use of schottky diode pairs in frequency doubling and mixing circuits in various ways, but do not describe or suggest any device method or structure that can perform both frequency doubling and harmonic mixing functions.
Disclosure of Invention
The harmonic mixing frequency multiplication circuit provided by the invention has the advantages of simple structure, easiness in realization, improvement of the integration level and reliability of a system, improvement of the performance of local oscillation signals and effective reduction of the cost.
In order to achieve the above object, the present invention provides a harmonic mixing frequency multiplier circuit, which comprises:
a microstrip "cross-tie" line having four termination points: the device comprises an a end, a b end, a c end and a d end, wherein the a end and the c end are on the same straight line, and the b end and the d end are on the same straight line;
the Schottky diode pair comprises a first Schottky diode and a second Schottky diode, wherein the cathode of the first Schottky diode is connected with the b end of the microstrip 'cross junction' line, and the anode of the second Schottky diode is connected with the d end of the microstrip 'cross junction' line;
the local oscillator input assembly is connected with the a end of the microstrip 'cross-shaped junction' line;
the radio frequency input assembly is connected with the c end of the microstrip 'cross-shaped knot' line;
the via hole grounding microstrip line is connected with the anode of the first Schottky diode;
the frequency doubling output assembly is connected with the cathode of the second Schottky diode;
and the intermediate frequency output assembly is connected with the radio frequency input assembly.
The local oscillator input module comprises:
a local oscillator input port;
one end of the local oscillator input microstrip coupler is connected with a local oscillator input port;
the first local oscillator input matching microstrip line has one end connected to the other end of the local oscillator input microstrip coupler;
one end of the first open circuit line is connected with the other end of the first local oscillator input matching microstrip line;
and one end of the second local oscillator input matching microstrip line is connected with the other end of the first local oscillator input matching microstrip line, and the other end of the second local oscillator input matching microstrip line is connected with the a end of the microstrip cross line.
The radio frequency input assembly comprises:
one end of the first radio frequency input matching microstrip line is connected with the c end of the microstrip 'cross-shaped knot' line;
one end of the fourth route is connected with the other end of the first radio frequency input matching microstrip line;
one end of the second radio frequency input matching microstrip line is connected with the other end of the first radio frequency input matching microstrip line;
one end of the radio frequency input microstrip coupler is connected with the other end of the second radio frequency input matching microstrip line;
and the radio frequency input port is connected with the other end of the radio frequency input microstrip coupler.
The frequency multiplication output component comprises:
one end of the first frequency doubling output matching microstrip line is connected with the cathode of the second Schottky diode;
one end of the second open circuit line is connected with the other end of the first frequency doubling output matching microstrip line;
one end of the third open route is connected with the other end of the first frequency doubling output matching microstrip line;
one end of the second frequency doubling output matching microstrip line is connected with the other end of the first frequency doubling output matching microstrip line;
and the frequency doubling output port is connected with the other end of the second frequency doubling output matching microstrip line.
The intermediate frequency output assembly comprises:
one end of the microstrip low-pass filter is connected with the other end of the second radio frequency input matching microstrip line;
and the intermediate frequency output port is connected with the other end of the microstrip low-pass filter.
The lengths of the first open line and the third open line are one fourth of the wavelength of the radio frequency signal, and the lengths of the second open line and the fourth open line are one fourth of the wavelength of the local oscillation signal.
The invention adopts a pair of Schottky diodes to realize the harmonic mixing function and the frequency doubling function, replaces a harmonic mixer and a frequency multiplier adopted by the existing receiving and transmitting system, has simple structure and easy realization, improves the integration level and the reliability of the system, has the required local oscillation frequency which is only half of the fundamental wave mixing local oscillation frequency, can greatly reduce the local oscillation frequency, thereby improving the performance of local oscillation signals and effectively reducing the cost, and can be applied to the microwave millimeter wave receiving and transmitting system.
Drawings
Fig. 1 is a schematic structural diagram of a harmonic mixing frequency multiplier circuit provided in the present invention.
Fig. 2 is a frequency multiplication output spectrum of the harmonic mixing frequency multiplication circuit provided by the invention.
Fig. 3 is an intermediate frequency output spectrum of the harmonic mixing frequency multiplication circuit provided by the present invention.
Detailed Description
The preferred embodiment of the present invention will be described in detail below with reference to fig. 1 to 3.
As shown in fig. 1, the present invention provides a harmonic mixing frequency multiplier circuit implemented based on a schottky diode pair, which specifically includes:
a microstrip "cross-tie" line 12 having four termination points: the device comprises an a end, a b end, a c end and a d end, wherein the a end and the c end are on the same straight line, and the b end and the d end are on the same straight line;
a schottky diode pair 10, which comprises a first schottky diode and a second schottky diode, wherein the cathode of the first schottky diode is connected with the b end of the microstrip "cross junction" line 12, and the anode of the second schottky diode is connected with the d end of the microstrip "cross junction" line 12;
the local oscillator input assembly is connected with the a end of the microstrip 'cross-shaped junction' line 12;
a radio frequency input component which is connected with the c end of the microstrip 'cross-shaped knot' line 12;
a via hole grounding microstrip line 5 connected with the anode of the first Schottky diode;
the frequency doubling output assembly is connected with the cathode of the second Schottky diode;
and the intermediate frequency output assembly is connected with the radio frequency input assembly.
Further, the local oscillator input module includes:
a local oscillator input port 17;
a local oscillator input microstrip coupler 1, one end of which is connected with a local oscillator input port 17;
a first local oscillator input matching microstrip line 2, one end of which is connected with the other end of the local oscillator input microstrip coupler 1;
one end of the first open circuit line 3 is connected with the other end of the first local oscillator input matching microstrip line 2;
and one end of the second local oscillator input matching microstrip line 4 is connected with the other end of the first local oscillator input matching microstrip line 2, and the other end of the second local oscillator input matching microstrip line is connected with the a end of the microstrip 'cross-shaped' line 12.
The radio frequency input assembly comprises:
a first radio frequency input matching microstrip line 13, one end of which is connected with the c end of a microstrip 'cross-shaped knot' line 12;
one end of the fourth route line 11 is connected with the other end of the first radio frequency input matching microstrip line 13;
a second radio frequency input matching microstrip line 14, one end of which is connected with the other end of the first radio frequency input matching microstrip line 13;
a radio frequency input microstrip coupler 15, one end of which is connected with the other end of the second radio frequency input matching microstrip line 14;
and a radio frequency input port 18 connected to the other end of the radio frequency input microstrip coupler 15.
The frequency multiplication output component comprises:
one end of the first frequency doubling output matching microstrip line 7 is connected with the cathode of the second Schottky diode;
one end of the second open circuit line 6 is connected with the other end of the first frequency doubling output matching microstrip line 7;
a third open route 9, one end of which is connected with the other end of the first frequency doubling output matching microstrip line 7;
a second frequency doubling output matching microstrip line 8, one end of which is connected with the other end of the first frequency doubling output matching microstrip line 7;
and a frequency doubling output port 20 connected to the other end of the second frequency doubling output matching microstrip line 8.
The intermediate frequency output assembly comprises:
a microstrip low-pass filter 16, one end of which is connected to the other end of the second radio frequency input matching microstrip line 14;
and an intermediate frequency output port 19 connected to the other end of the microstrip low pass filter 16.
The lengths of the first open line 3 and the third open line 9 are one fourth of the wavelength of the radio frequency signal; the lengths of the second open line 6 and the fourth open line 11 are one fourth of the wavelength of the local oscillation signal.
In the simulation design stage, the impedance matching of the local oscillator input signals at different working frequencies is realized by adjusting the width and the length of the first local oscillator input matching microstrip line 2 and the second local oscillator input matching microstrip line 4, so as to ensure the excitation power of the local oscillator signal feed-in diode pair at different working frequencies.
By adjusting the width and length of the first radio frequency input matching microstrip line 13 and the second radio frequency input matching microstrip line 14, the impedance matching of the radio frequency input signals at different working frequencies is realized, so that the excitation power of the radio frequency signal feed-in diode pair at different working frequencies is ensured.
By adjusting the width and length of the first frequency doubling output matching microstrip line 7 and the second frequency doubling output matching microstrip line 8, the impedance matching of the frequency doubling output signals at different working frequencies is realized, so that the output power of the frequency doubling signals at different working frequencies is ensured.
By adjusting the sizes of the high impedance line and the low impedance line of the microstrip low pass filter 16, an optimal load suitable for the transmission of the intermediate frequency signal can be obtained, and meanwhile, the leakage of the radio frequency signal and the local oscillation signal to the intermediate frequency output port is restrained.
In the invention, the Schottky diode pair is connected in series between the second open line 6, the third open line 9 and the via hole grounding microstrip line 5, so that the Schottky diode pair presents a reverse parallel state relative to a local oscillator signal and a radio frequency signal and presents a series connection state in the same direction relative to a frequency doubling output signal.
The non-linear effect of the Schottky diode pair at the frequency doubling output end enables even harmonics of the local oscillator signals to be output in a same-polarity superposition mode, odd harmonic signals are offset in a reverse direction, even harmonics of the local oscillator signals are offset in a reverse direction at the intermediate frequency output end, and even harmonic mixing is output in a same-direction superposition mode, so that the isolation between the frequency doubling output port and the intermediate frequency port is improved.
The microstrip low pass filter 16 allows the intermediate frequency signal to pass through, and the local oscillator signal and the radio frequency signal to not pass through, so as to improve the isolation between the intermediate frequency port and the radio frequency port and the local oscillator port.
The local oscillator input microstrip coupler 1 and the radio frequency input microstrip coupler 15 respectively work in a local oscillator signal frequency band and a radio frequency signal frequency band, so that the direct current isolation effect can be realized, and the isolation between the local oscillator signal and the radio frequency signal can be improved.
In order to further improve the efficiency, a first open circuit line 3 is added at the local oscillator input end to play a role of reflecting the radio frequency signals back to the diode pair, and a fourth open circuit line 11 is added at the radio frequency input end to play a role of reflecting the local oscillator signals back to the diode pair.
Fig. 2 is a frequency spectrum diagram of a frequency doubling output port, showing that the double frequency output signal has more than 35dB of local oscillation suppression and more than 50dB of intermediate frequency suppression.
Fig. 3 is a spectral diagram of the intermediate frequency output port showing the intermediate frequency output signal suppressed by more than 50dB for the double frequency signal and the local oscillator signal.
Based on radio frequency software simulation platform ADS and HFSS, the feasibility of the structure of the invention is verified.
The invention adopts a pair of Schottky diodes to realize the harmonic mixing function and the frequency doubling function, replaces a harmonic mixer and a frequency multiplier adopted by the existing receiving and transmitting system, has simple structure and easy realization, improves the integration level and the reliability of the system, has the required local oscillation frequency which is only half of the fundamental wave mixing local oscillation frequency, can greatly reduce the local oscillation frequency, thereby improving the performance of local oscillation signals and effectively reducing the cost, and can be applied to the microwave millimeter wave receiving and transmitting system.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (2)
1. A harmonic mixing frequency multiplier circuit, comprising:
a microstrip "cross-tie" line (12) having four termination points: the device comprises an a end, a b end, a c end and a d end, wherein the a end and the c end are on the same straight line, and the b end and the d end are on the same straight line;
the Schottky diode pair (10) comprises a first Schottky diode and a second Schottky diode, wherein the cathode of the first Schottky diode is connected with the b end of the microstrip 'cross junction' line (12), and the anode of the second Schottky diode is connected with the d end of the microstrip 'cross junction' line (12);
the local oscillator input assembly is connected with the a end of the microstrip 'cross-shaped junction' line (12);
the radio frequency input assembly is connected with the c end of the microstrip 'cross-junction' line (12);
a via hole grounding microstrip line (5) which is connected with the anode of the first Schottky diode;
the frequency doubling output assembly is connected with the cathode of the second Schottky diode;
the intermediate frequency output assembly is connected with the radio frequency input assembly;
the local oscillator input module comprises:
a local oscillator input port (17);
the local oscillator input microstrip coupler (1) is connected with a local oscillator input port (17) at one end;
a first local oscillator input matching microstrip line (2), one end of which is connected with the other end of the local oscillator input microstrip coupler (1);
one end of the first open circuit line (3) is connected with the other end of the first local oscillator input matching microstrip line (2);
a second local oscillator input matching microstrip line (4), one end of which is connected with the other end of the first local oscillator input matching microstrip line (2), and the other end of which is connected with the a end of a microstrip 'cross-shaped' line (12);
the radio frequency input assembly comprises:
a first radio frequency input matching microstrip line (13), one end of which is connected with the c end of a microstrip 'cross-shaped knot' line (12);
one end of the fourth route (11) is connected with the other end of the first radio frequency input matching microstrip line (13);
a second radio frequency input matching microstrip line (14), one end of which is connected with the other end of the first radio frequency input matching microstrip line (13);
a radio frequency input microstrip coupler (15), one end of which is connected with the other end of the second radio frequency input matching microstrip line (14);
a radio frequency input port (18) connected to the other end of the radio frequency input microstrip coupler (15);
the frequency multiplication output component comprises:
a first frequency doubling output matching microstrip line (7), one end of which is connected with the cathode of the second Schottky diode;
one end of the second open circuit line (6) is connected with the other end of the first frequency doubling output matching microstrip line (7);
a third open route (9), one end of which is connected with the other end of the first frequency multiplication output matching microstrip line (7);
a second frequency doubling output matching microstrip line (8), one end of which is connected with the other end of the first frequency doubling output matching microstrip line (7);
a frequency doubling output port (20) which is connected with the other end of the second frequency doubling output matching microstrip line (8);
the intermediate frequency output assembly comprises:
a microstrip low-pass filter (16), one end of which is connected with the other end of the second radio frequency input matching microstrip line (14);
and an intermediate frequency output port (19) connected to the other end of the microstrip low-pass filter (16).
2. The harmonic mixing frequency multiplication circuit according to claim 1, wherein the length of the first open line (3) and the third open line (9) is one quarter of the wavelength of the radio frequency signal, and the length of the second open line (6) and the fourth open line (11) is one quarter of the wavelength of the local oscillation signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711215491.1A CN107888149B (en) | 2017-11-28 | 2017-11-28 | Harmonic mixing frequency multiplier circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711215491.1A CN107888149B (en) | 2017-11-28 | 2017-11-28 | Harmonic mixing frequency multiplier circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107888149A CN107888149A (en) | 2018-04-06 |
| CN107888149B true CN107888149B (en) | 2021-11-02 |
Family
ID=61775722
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711215491.1A Active CN107888149B (en) | 2017-11-28 | 2017-11-28 | Harmonic mixing frequency multiplier circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107888149B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109150110B (en) * | 2018-07-26 | 2021-12-07 | 东南大学 | Planar structure balanced frequency doubler |
| CN114123978B (en) * | 2022-01-24 | 2022-05-03 | 电子科技大学 | Terahertz low-noise miniaturized image frequency suppression transceiving front end based on heterogeneous integration |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USH1081H (en) * | 1988-03-21 | 1992-07-07 | The United States Of America As Represented By The Secretary Of The Army | Monolithic millimeter-wave image guide balanced mixer |
| CN1444309A (en) * | 2002-03-11 | 2003-09-24 | 香港城市大学 | Micrometer wave and milimeter wave guartic harmonic mixer |
| CN104362421A (en) * | 2014-11-06 | 2015-02-18 | 电子科技大学 | Single-substrate integrated terahertz front end |
| CN104467681A (en) * | 2014-11-06 | 2015-03-25 | 电子科技大学 | Terahertz subharmonic frequency multiplication and mixing device based on monolithic integrated circuit |
| CN105048965A (en) * | 2015-09-08 | 2015-11-11 | 电子科技大学 | Millimeter-wave dual-band frequency doubler based on Schottky diode pairs |
-
2017
- 2017-11-28 CN CN201711215491.1A patent/CN107888149B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USH1081H (en) * | 1988-03-21 | 1992-07-07 | The United States Of America As Represented By The Secretary Of The Army | Monolithic millimeter-wave image guide balanced mixer |
| CN1444309A (en) * | 2002-03-11 | 2003-09-24 | 香港城市大学 | Micrometer wave and milimeter wave guartic harmonic mixer |
| CN104362421A (en) * | 2014-11-06 | 2015-02-18 | 电子科技大学 | Single-substrate integrated terahertz front end |
| CN104467681A (en) * | 2014-11-06 | 2015-03-25 | 电子科技大学 | Terahertz subharmonic frequency multiplication and mixing device based on monolithic integrated circuit |
| CN105048965A (en) * | 2015-09-08 | 2015-11-11 | 电子科技大学 | Millimeter-wave dual-band frequency doubler based on Schottky diode pairs |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107888149A (en) | 2018-04-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4975100B2 (en) | Even harmonic mixer | |
| CN112019165B (en) | Terahertz broadband frequency doubling circuit based on pumping stray high suppression and frequency doubler | |
| CN111900931A (en) | Broadband terahertz fourth harmonic mixing circuit, mixer and method | |
| CN103354442B (en) | A kind of Multifunctional frequency multiplier | |
| CN110460310A (en) | A kind of ultra wide band higher harmonics inhibition Terahertz frequency multiplier | |
| CN107888149B (en) | Harmonic mixing frequency multiplier circuit | |
| CN112615590A (en) | TSM-PI frequency tripler based on double-balanced frequency mixing | |
| CN109150110B (en) | Planar structure balanced frequency doubler | |
| EP3577756B1 (en) | A broadband frequency tripler | |
| CN104079242A (en) | Frequency multiplier | |
| CN108631734A (en) | A kind of millimeter wave broadband frequency mixer based on multiple coupled transmission line | |
| US20230238998A1 (en) | Hetero-integrated terahertz low-noise miniaturized image frequency rejection transceiver front-end | |
| CN203368401U (en) | Multifunctional frequency multiplier | |
| Ergintav et al. | An integrated 122GHz differential frequency doubler with 37GHz bandwidth in 130 nm SiGe BiCMOS technology | |
| CN113965165A (en) | Broadband high-fundamental-wave suppression double-balance self-mixing structure millimeter wave quadrupler | |
| CN203984356U (en) | Millimeter based on avalanche diode involves Terahertz ten fifth overtone frequency mixers | |
| CN113534056A (en) | Broadband millimeter wave second harmonic mixer | |
| JP3147852B2 (en) | Harmonic mixer circuit | |
| US9912293B2 (en) | Sub-harmonic mixer and a method therein for converting radio frequency signals to intermediate frequency signals | |
| CN106936389A (en) | A kind of nonlinear transmission line frequency mixer | |
| Miao et al. | The design and simulation of a 0.14 THz frequency doubler | |
| CN111682023B (en) | Terahertz heterogeneous integrated chip | |
| CN112688642B (en) | Millimeter wave broadband mixer based on asymmetric three-wire coupler | |
| CN218456413U (en) | Resistive mixer for IQ double-balanced FET | |
| Wen et al. | A D-band monolithic doubler in 70nm GaAs mHEMT process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |