CN105024646A - New hybrid integrated circuit for terahertz frequency multiplier chain - Google Patents
New hybrid integrated circuit for terahertz frequency multiplier chain Download PDFInfo
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Abstract
The invention discloses a new hybrid integrated circuit for a terahertz frequency multiplier chain and relates to the technical field of a terahertz device. The circuit comprises a radio frequency input waveguide, a first quartz substrate, a radio frequency input transition microstrip line, a first transmission microstrip line, a first low-pass filter, an input matching microstrip line, a first GaAs terahertz frequency doubling diode, a second transmission microstrip line, a second GaAs terahertz frequency doubling diode, an output matching microstrip line, a fourth transmission microstrip line, a radio frequency output transition microstrip line, a radio frequency output waveguide, a third transmission microstrip line, a second low-frequency filter, a third low-frequency filter, a first gold wire jumper, a second gold wire jumper, a second quartz substrate and a third quartz substrate. The hybrid integrated circuit of the invention could obtain four-times of frequency doubling output, six-times of frequency doubling output and nine-times of frequency doubling output, and is high in integration level and miniaturization level. The hybrid integrated circuit of the invention could obtain maximum power output and is simple in process.
Description
Technical field
The present invention relates to THz devices technical field, particularly relate to a kind of novel hybrid integrated circuit for Terahertz frequency multiplier chain.
Background technology
Terahertz (THz) ripple, from broadly, refers to the electromagnetic wave of frequency within the scope of 0.1THz-10THz, wherein 1THz=1000GHz, and also someone thinks that Terahertz frequency refers to the electromagnetic wave within the scope of 0.3THz-3THz.THz ripple occupies very special position in electromagnetic spectrum, and THz technology is the very important intersection Disciplinary Frontiers that International Technology circle is generally acknowledged.
Carrying out expansion based on solid-state electronic technology to Terahertz frequency source is a kind of effective mode.Frequency multiplication link abroad based on GaAs Schottky diode reaches 3.1THz, and frequency multiplication link is mainly based on 2 frequencys multiplication and 3 frequencys multiplication.No matter be 2 frequencys multiplication or 3 frequencys multiplication, be all make a module, then connected by standard flange.The frequency that such as will realize from 100GHz to 400GHz is expanded, and need the two times of frequency modules first making 100GHz a to 200GHz, then make two times of frequency modules of 200GHz a to 400GHz, two modules are connected by standard flange.
Because Terahertz band frequency is high, require high to the machining accuracy of cavity, the processing charges of cavity costly, increase the expenditure of scientific research cost, if two frequency multiplication links are concentrated on a circuit, then only can process a cavity, improve the integrated level of circuit.This just needs the frequency adopting novel circuit design mode to meet low cost to expand demand.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of novel hybrid integrated circuit for Terahertz frequency multiplier chain, described hybrid integrated circuit can obtain 4 frequencys multiplication, 6 frequencys multiplication and 9 frequencys multiplication and export, and integrated level is high, degree of miniaturization is high, can obtain maximum power stage, technique is simple.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of novel hybrid integrated circuit for Terahertz frequency multiplier chain, it is characterized in that: comprise the first quartz base plate, radio frequency on described first quartz base plate inputs excessive microstrip line across on radio frequency input waveguide, radio frequency inputs one end of excessive microstrip line successively through the first transmission microstrip line, first low pass filter, be connected with second one end of transmitting microstrip line after Input matching microstrip line and a GaAs Terahertz frequency doubled diode, it is relative and keep gap to arrange that the other end and the 3rd of the second transmission microstrip line transmits one end of microstrip line, the other end of the 3rd transmission microstrip line is successively through the 2nd GaAs Terahertz frequency doubled diode, output matching microstrip line and the 4th transmission microstrip line are connected with one end that radio frequency exports transition microstrip line, described radio frequency exports transition microstrip line across in radio frequency output waveguide, described first transmission microstrip line, first low pass filter, Input matching microstrip line, one GaAs Terahertz frequency doubled diode, second transmission microstrip line, 3rd transmission microstrip line, 2nd GaAs Terahertz frequency doubled diode, output matching microstrip line, 4th transmission microstrip line and radio frequency export transition microstrip line and are positioned on described first quartz base plate,
Second low-frequency filter is positioned on the second quartz base plate, one end of second low-frequency filter is transmitted microstrip line by the first spun gold wire jumper and the 3rd and is connected, 3rd low-frequency filter is positioned on the 3rd quartz base plate, and one end of the 3rd low-frequency filter is transmitted microstrip line by the second spun gold wire jumper and second and is connected.
Further technical scheme is: described radio frequency input waveguide is matrix waveguide.
Further technical scheme is: described first low pass filter is 5 rank or 7 rank height impedance micro-strip, for maximum for the radiofrequency signal of input is transferred to diode place, stops 2 subharmonic of radiofrequency signal and 4 rd harmonic signal to be fed back to input simultaneously.
Further technical scheme is: a described GaAs Terahertz frequency doubled diode comprises four Schottky diodes, be divided into two groups, often group comprises two Schottky diodes, two Schottky diodes often in group are connected in series, the anode of the diode in a group is connected with the anode of the diode in another group, the negative electrode of the diode in the negative electrode of the diode in a group and another group is connected with earth terminal, and the anode of described two groups of diodes mates one end of microstrip line respectively with input radio frequency and second one end of transmitting microstrip line is connected.
Further technical scheme is: the outer layer doping concentration of described Schottky diode is 2e17cm
-3, anode round diameter is 6 microns, and junction capacitance is 30 fF to 40fF, and resistance is 2 ohm to 3 ohm.
Further technical scheme is: the distance that the second transmission microstrip line and the 3rd transmits the gap between microstrip line is 1 micron-3 microns.
Further technical scheme is: described 2nd GaAs Terahertz frequency doubled diode comprises two Schottky diodes be connected in parallel, the minus earth of described Schottky diode, one end of one end and output matching microstrip line that anode transmits microstrip line with the 3rd is respectively connected.
Further technical scheme is: the outer layer doping concentration of described Schottky diode is 2e17cm
-3, anode round diameter is 2 microns, and junction capacitance is 10fF, and resistance is 5 ohm to 8 ohm.
Further technical scheme is: described second low pass filter and the 3rd low pass filter are 5 rank or 7 rank just impedance micro-strip or I shape filter.
Further technical scheme is: described second low pass filter is connected with sub-miniature A connector respectively by the microstrip transmission line that characteristic impedance is 50 ohm with the other end of the 3rd low pass filter.
The beneficial effect adopting technique scheme to produce is: integrated 2 GaAs Terahertz frequency doubled diode on a quartz base plate, and being equivalent to two frequency multiplication module integrations is a module, and integrated level is high, and module is miniaturized; On quartz base plate, two GaAs Terahertz frequency doubled diode of face-down bonding, can be biased voltage respectively, regulate the working point of diode, thus obtain maximum power stage; GaAs Terahertz frequency doubled diode adopts flip-chip bonding process, and technique is comparatively simple.
Accompanying drawing explanation
Fig. 1 is electrical block diagram of the present invention;
Wherein: 101, radio frequency input waveguide 102, first quartz base plate 103, radio frequency inputs excessive microstrip line 104, first transmission microstrip line 105, first low pass filter 106, Input matching microstrip line 107, one GaAs Terahertz frequency doubled diode 108, second transmission microstrip line 109, 2nd GaAs Terahertz frequency doubled diode 110, output matching microstrip line 111, 4th transmission microstrip line 112, radio frequency exports transition microstrip line 113, radio frequency output waveguide 114, 3rd transmission microstrip line 115, second low-frequency filter 116, 3rd low-frequency filter 117, first spun gold wire jumper 118, second spun gold wire jumper 119, second quartz base plate 120, 3rd quartz base plate.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only a part of embodiment of the present invention, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
As shown in Figure 1, the invention discloses a kind of novel hybrid integrated circuit for Terahertz frequency multiplier chain, comprise the first quartz base plate 102, radio frequency on described first quartz base plate 102 inputs excessive microstrip line 103 across on radio frequency input waveguide 101, radio frequency inputs one end of excessive microstrip line 103 successively through the first transmission microstrip line 104, first low pass filter 105, be connected with second one end of transmitting microstrip line 108 after Input matching microstrip line 106 and a GaAs Terahertz frequency doubled diode 107, it is relative and keep gap to arrange that the other end and the 3rd of the second transmission microstrip line 108 transmits one end of microstrip line 114, the other end of the 3rd transmission microstrip line 114 is connected with one end that radio frequency exports transition microstrip line 112 through the 2nd GaAs Terahertz frequency doubled diode 109, output matching microstrip line 110 and the 4th transmission microstrip line 111 successively, and described radio frequency exports transition microstrip line 112 across in radio frequency output waveguide 113.
Described first transmission microstrip line 104, first low pass filter 105, Input matching microstrip line 106, a GaAs Terahertz frequency doubled diode 107, second transmit microstrip line 108, the 3rd transmission microstrip line 114, the 2nd GaAs Terahertz frequency doubled diode 109, output matching microstrip line 110, the 4th transmission microstrip line 111 and radio frequency output transition microstrip line 112 and are positioned on described first quartz base plate 102; Second low-frequency filter 115 is positioned on the second quartz base plate 119, one end of second low-frequency filter 115 is transmitted microstrip line 114 by the first spun gold wire jumper 117 and the 3rd and is connected, 3rd low-frequency filter 116 is positioned on the 3rd quartz base plate 120, and one end of the 3rd low-frequency filter 116 is transmitted microstrip line 108 by the second spun gold wire jumper 118 and second and is connected.
In order to better the present invention is described, with 100GHz input, 400GHz is that example is illustrated the specific embodiment of the present invention as output frequency.
Radio frequency input waveguide 101(is WM-2032 rectangular waveguide herein, a and b is respectively 2032 microns and 1016 microns) introduce 100GHz radiofrequency signal, radio frequency inputs excessive microstrip line 103 and radiofrequency signal is incorporated into quartzy circuit from input waveguide transmits, first transmission microstrip line 104 is quartzy circuit microstrip line, first low pass filter 105 can be 5 rank or 7 rank height impedance micro-strip, the effect of the first low pass filter 105 is that maximum for the radiofrequency signal of input is transferred to diode place, stop 2 subharmonic (200GHz) of radiofrequency signal and 4 rd harmonic signal (400GHz) to be fed back to input simultaneously.
The effect of Input matching microstrip line 106 is that input radio frequency signal impedance is carried out impedance matching, to make in the maximum feed-in of radiofrequency signal the one GaAs Terahertz frequency doubled diode 107 with the impedance of diode.Consider to export 400GHz, the first step is the secondary frequency multiplication realizing 100GHz to 200GHz, 100GHz inputs 100mW, one GaAs Terahertz frequency doubled diode 107 adopts the Schottky diode of 4 anode knots, each diode bears the input power of 25mW, can meet the demands, a GaAs Terahertz frequency doubled diode equivalent electric circuit as shown in Figure 1, is Schottky diode in parallel in the same way.Schottky diode two ends realize good earth by conducting resinl and cavity, and Schottky diode intermediate contact pads and quartzy circuit microstrip line realize good welds by conducting resinl, and Schottky diode adopts the technique of face-down bonding.In order to realize efficient secondary frequency multiplication technology, Schottky diode adopts epitaxial layer concentration to be 2e17cm
-3the Schottky diode of doped in concentrations profiled, anode adopts the Schottky diode of round diameter 6 microns, junction capacitance is 30fF to 40fF, resistance is 2 ohm to 3 ohm, adopt the type diode, by applying bias voltage, the efficiency of Schottky diode can reach 20%, through this frequency multiplication Schottky diode, the power output of second harmonic 200GHz is 20mW.
Second transmission microstrip line 108 and the 3rd transmission microstrip line 114 are the input matching circuit of the 2nd GaAs Terahertz frequency doubled diode 109.Wherein leave small gap in the middle of the second transmission microstrip line 108 and the 3rd transmission microstrip line 114 microstrip line, specifically please refer to accompanying drawing 1, between second transmission microstrip line 108 and the 3rd transmission microstrip line 114, gap width can be 1 micron-3 microns, can ensure that 200GHz signal is coupled to the 3rd transmission microstrip line 114 from the second transmission microstrip line 108 like this, two sections of microstrip lines are open circuits at direct current simultaneously, can ensure that a GaAs Terahertz frequency doubled diode 107 and the 2nd GaAs Terahertz frequency doubled diode 109 are biased voltage respectively.Because 200GHz output power signal is little, therefore the 2nd GaAs Terahertz frequency doubled diode 109 adopts 2 Schottky diodes can bear this power, and adopt double anode knot, Schottky diode in parallel in the same way, diode adopts outer layer doping concentration to be 2e17cm
-3anode adopts the Schottky diode of round diameter 2 microns, junction capacitance is 10fF, resistance is 5 ohm to 8 ohm, adopt the type Schottky diode, by applying bias voltage, Schottky diode can reach 20% in the secondary frequency multiplication efficiency of 400GHz, through 109 frequency doubled diode, the power output of 400GHz is 4mW.
3rd transmission microstrip line 114 can be designed to 3 rank or 5 rank low pass filters, by 200GHz radiofrequency signal, stop 400GHz radiofrequency signal to the feedback of input simultaneously.Output matching microstrip line 110 is the output matching circuit of 400Ghz, and 400GHz signal exports from radio frequency output waveguide 113.Second low-frequency filter 115 and the 3rd low-frequency filter 116 are mid-frequency low-pass filter, can be 5 rank or 7 rank height impedance micro-strip, also can be I shape filter, input radio frequency 100GHz and its each harmonic (200GHz, 400GHz) is stoped to be revealed, second low-frequency filter 115 and the 3rd low-frequency filter 116 one end are transmitted microstrip line 114 and second respectively and are transmitted microstrip line 108 and realize being connected by the first spun gold wire jumper 117 and the second spun gold wire jumper 118 spun gold wire jumper with the 3rd, can ensure that DC offset voltage is loaded on Schottky diode; The microstrip transmission line of another termination characteristic impedance 50 ohm of the second low-frequency filter 115 and the 3rd low-frequency filter 116, facilitates this port to be connected with sub-miniature A connector, by the voltage-drop loading of external voltage source to diode place.
First quartz base plate 102 is placed in the waveguide slot between radio frequency input waveguide 101 and radio frequency output waveguide 113, and the second quartz base plate 119 and the 3rd quartz base plate 120 are also placed in corresponding waveguide slot.The manufacture craft of quartz circuit is very ripe, and the thickness of quartzy circuit substrate is generally 30 to 75 microns.The present invention is not to provide concrete frequency multiplier circuit, and be to provide a kind of novel hybrid integrated circuit form for Terahertz frequency multiplier chain, adopt this circuit form, the independent bias of double diode can be realized, the operating state of adjustment diode the best, obtains maximum power output; Integrated pair of Schottky diode on same quartz base plate, 4 frequencys multiplication of frequency, 6 frequencys multiplication and 9 frequencys multiplication can be realized, originally the function i ntegration needing 2 modules to realize can be completed in a module, reduce the expenditure of scientific research cost, improve the integrated level of module and the miniaturization of module.
Claims (10)
1. the novel hybrid integrated circuit for Terahertz frequency multiplier chain, it is characterized in that: comprise the first quartz base plate (102), radio frequency on described first quartz base plate (102) inputs excessive microstrip line (103) across on radio frequency input waveguide (101), radio frequency inputs one end of excessive microstrip line (103) successively through the first transmission microstrip line (104), first low pass filter (105), Input matching microstrip line (106) and a GaAs Terahertz frequency doubled diode (107) transmit microstrip line (108) afterwards one end with second is connected, it is relative and keep gap to arrange that the other end and the 3rd of the second transmission microstrip line (108) transmits one end of microstrip line (114), the other end of the 3rd transmission microstrip line (114) is successively through the 2nd GaAs Terahertz frequency doubled diode (109), output matching microstrip line (110) and the 4th transmission microstrip line (111) are connected with one end that radio frequency exports transition microstrip line (112), described radio frequency exports transition microstrip line (112) across in radio frequency output waveguide (113), described first transmission microstrip line (104), first low pass filter (105), Input matching microstrip line (106), one GaAs Terahertz frequency doubled diode (107), second transmission microstrip line (108), 3rd transmission microstrip line (114), 2nd GaAs Terahertz frequency doubled diode (109), output matching microstrip line (110), 4th transmission microstrip line (111) and radio frequency export transition microstrip line (112) and are positioned on described first quartz base plate (102),
Second low-frequency filter (115) is positioned on the second quartz base plate (119), one end of second low-frequency filter (115) is transmitted microstrip line (114) by the first spun gold wire jumper (117) and the 3rd and is connected, 3rd low-frequency filter (116) is positioned on the 3rd quartz base plate (120), and one end of the 3rd low-frequency filter (116) is transmitted microstrip line (108) by the second spun gold wire jumper (118) and second and is connected.
2. the novel hybrid integrated circuit for Terahertz frequency multiplier chain according to claim 1, is characterized in that: described radio frequency input waveguide (101) is matrix waveguide.
3. the novel hybrid integrated circuit for Terahertz frequency multiplier chain according to claim 1, it is characterized in that: described first low pass filter (105) is 5 rank or 7 rank height impedance micro-strip, for maximum for the radiofrequency signal of input is transferred to diode place, stop 2 subharmonic of radiofrequency signal and 4 rd harmonic signal to be fed back to input simultaneously.
4. the novel hybrid integrated circuit for Terahertz frequency multiplier chain according to claim 1, it is characterized in that: a described GaAs Terahertz frequency doubled diode (107) comprises four Schottky diodes, be divided into two groups, often group comprises two Schottky diodes, two Schottky diodes often in group are connected in series, the anode of the diode in a group is connected with the anode of the diode in another group, the negative electrode of the diode in the negative electrode of the diode in a group and another group is connected with earth terminal, the anode of described two groups of diodes mates one end of microstrip line respectively with input radio frequency and second one end of transmitting microstrip line is connected.
5. the novel hybrid integrated circuit for Terahertz frequency multiplier chain according to claim 4, is characterized in that: the outer layer doping concentration of described Schottky diode is 2e17cm
-3, anode round diameter is 6 microns, and junction capacitance is 30 fF to 40fF, and resistance is 2 ohm to 3 ohm.
6. the novel hybrid integrated circuit for Terahertz frequency multiplier chain according to claim 1, is characterized in that: the distance in the second transmission microstrip line (108) and the 3rd gap of transmitting between microstrip line (114) is 1 micron-3 microns.
7. the novel hybrid integrated circuit for Terahertz frequency multiplier chain according to claim 1, it is characterized in that: described 2nd GaAs Terahertz frequency doubled diode (109) comprises two Schottky diodes be connected in parallel, the minus earth of described Schottky diode, one end of one end and output matching microstrip line that anode transmits microstrip line with the 3rd is respectively connected.
8. the novel hybrid integrated circuit for Terahertz frequency multiplier chain according to claim 7, is characterized in that: the outer layer doping concentration of described Schottky diode is 2e17cm
-3, anode round diameter is 2 microns, and junction capacitance is 10fF, and resistance is 5 ohm to 8 ohm.
9. the novel hybrid integrated circuit for Terahertz frequency multiplier chain according to claim 1, is characterized in that: described second low pass filter (115) and the 3rd low pass filter (116) are 5 rank or 7 rank just impedance micro-strip or I shape filter.
10. the novel hybrid integrated circuit for Terahertz frequency multiplier chain according to claim 1, is characterized in that: described second low pass filter (115) is connected with sub-miniature A connector respectively by the microstrip transmission line that characteristic impedance is 50 ohm with the other end of the 3rd low pass filter (116).
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| CN105281670A (en) * | 2015-11-11 | 2016-01-27 | 中国电子科技集团公司第四十一研究所 | 220GHz-325GHz applied bias broadband efficient secondary frequency multiplication |
| CN106130486A (en) * | 2016-07-29 | 2016-11-16 | 中国电子科技集团公司第十三研究所 | W-waveband and Terahertz frequency low side doubler |
| CN106160668A (en) * | 2016-07-29 | 2016-11-23 | 中国电子科技集团公司第十三研究所 | The Terahertz of resistance to power frequency tripling class balanced type frequency multiplier circuit |
| CN107040212A (en) * | 2017-05-27 | 2017-08-11 | 中国电子科技集团公司第十三研究所 | One side quartz fin line Terahertz No. three frequency multiplier circuits of balanced type |
| CN110380690A (en) * | 2019-07-25 | 2019-10-25 | 江苏心磁超导体有限公司 | Terahertz waveguide can bias harmonic mixer |
| CN110719067A (en) * | 2019-09-05 | 2020-01-21 | 中国电子科技集团公司第十三研究所 | Terahertz frequency multiplier with thermal matching structure |
| CN112838830A (en) * | 2021-01-29 | 2021-05-25 | 河北雄安太芯电子科技有限公司 | Monolithic G-band frequency tripler |
| CN113178671A (en) * | 2021-04-23 | 2021-07-27 | 电子科技大学 | Terahertz monolithic circuit transition structure |
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| CN107040212A (en) * | 2017-05-27 | 2017-08-11 | 中国电子科技集团公司第十三研究所 | One side quartz fin line Terahertz No. three frequency multiplier circuits of balanced type |
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| CN110380690A (en) * | 2019-07-25 | 2019-10-25 | 江苏心磁超导体有限公司 | Terahertz waveguide can bias harmonic mixer |
| CN110719067A (en) * | 2019-09-05 | 2020-01-21 | 中国电子科技集团公司第十三研究所 | Terahertz frequency multiplier with thermal matching structure |
| CN110719067B (en) * | 2019-09-05 | 2023-08-15 | 中国电子科技集团公司第十三研究所 | Terahertz frequency multiplier with thermal matching structure |
| CN112838830A (en) * | 2021-01-29 | 2021-05-25 | 河北雄安太芯电子科技有限公司 | Monolithic G-band frequency tripler |
| CN113178671B (en) * | 2021-04-23 | 2022-12-27 | 电子科技大学 | Terahertz monolithic circuit transition structure |
| CN113178671A (en) * | 2021-04-23 | 2021-07-27 | 电子科技大学 | Terahertz monolithic circuit transition structure |
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