CN110719067B - Terahertz frequency multiplier with thermal matching structure - Google Patents
Terahertz frequency multiplier with thermal matching structure Download PDFInfo
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- CN110719067B CN110719067B CN201910837993.0A CN201910837993A CN110719067B CN 110719067 B CN110719067 B CN 110719067B CN 201910837993 A CN201910837993 A CN 201910837993A CN 110719067 B CN110719067 B CN 110719067B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B1/00—Details
- H03B1/02—Structural details of power oscillators, e.g. for heating
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention provides a terahertz frequency multiplier with a thermal matching structure, which belongs to the field of terahertz devices and comprises a metal shell, a diamond substrate arranged in an inner cavity of the metal shell, an input waveguide structure, a filter circuit structure, a first matching circuit structure, a frequency multiplication chip, a second matching circuit structure and an output waveguide structure which are arranged on the diamond substrate and are sequentially connected, wherein a third thermal expansion adaptation layer is arranged at a first type pressure point corresponding to the frequency multiplication chip on the upper surface of the diamond substrate, and a fourth thermal expansion adaptation layer is arranged at a second type pressure point corresponding to the inner cavity of the metal shell on the lower surface of the diamond substrate. According to the terahertz frequency multiplier with the thermal matching structure, the third thermal expansion adaptive layer and the fourth thermal expansion adaptive layer are made of materials with low thermal expansion coefficients, so that thermal expansion mismatch between the diamond substrate and the frequency multiplication chip and between the diamond substrate and the metal shell is effectively improved, and the diamond substrate can be used in the terahertz frequency multiplier.
Description
Technical Field
The invention belongs to the technical field of terahertz devices, and particularly relates to a terahertz frequency multiplier with a thermal matching structure.
Background
Terahertz waves refer to electromagnetic waves with the frequency range of 0.1THz-10THz, have very excellent characteristics, and can be widely applied to the fields of security inspection, medical treatment, aerospace, detection and the like. The terahertz frequency multiplier can multiply the frequency of the electromagnetic wave with low frequency to form terahertz waves, and is a core device for obtaining the terahertz waves. Because the frequency multiplication efficiency of the low-frequency electromagnetic wave in the terahertz frequency multiplier is generally low, the self-heating effect of the terahertz frequency multiplier is quite obvious, so that the junction temperature of a chip is increased, and the failure is caused.
The diamond has the characteristics of ultrahigh heat conductivity and low dielectric constant, is an ideal material for the terahertz frequency multiplier circuit substrate, but has larger thermal expansion coefficient mismatch between the diamond and the frequency multiplier chip and between the diamond and the frequency multiplier cavity, so that the diamond substrate is difficult to apply to the terahertz frequency multiplier.
Disclosure of Invention
The invention aims to provide a terahertz frequency multiplier with a thermal matching structure, which aims to solve the technical problem that a diamond substrate is difficult to apply because of larger thermal expansion coefficient mismatch exists between a diamond and a frequency multiplication chip and between frequency multiplier cavities in the prior art.
In order to achieve the above purpose, the invention adopts the following technical scheme: provided is a terahertz frequency multiplier with a thermal matching structure, comprising: the diamond substrate is arranged in the inner cavity of the metal shell, the input waveguide structure, the filter circuit structure, the first matching circuit structure, the frequency doubling chip, the second matching circuit structure and the output waveguide structure are arranged on the diamond substrate and sequentially connected, a third thermal expansion adaptation layer is arranged at a first-class pressure point corresponding to the frequency doubling chip on the upper surface of the diamond substrate, and a fourth thermal expansion adaptation layer is arranged at a second-class pressure point corresponding to the inner cavity of the metal shell on the lower surface of the diamond substrate.
In one embodiment, the third thermal expansion adapting layer and the fourth thermal expansion adapting layer are each a multilayer composite conditioning layer.
In one embodiment, the thickness of the third and fourth thermal expansion adaption layers is 10nm-100 μm.
In one embodiment, the third thermal expansion adapting layer comprises a first copper layer, a first molybdenum layer and a second copper layer which are stacked from top to bottom.
In one embodiment, the fourth thermal expansion adapting layer comprises a third copper layer, a second molybdenum layer and a fourth copper layer which are stacked from top to bottom.
In one embodiment, a first thermal expansion matching layer is further arranged between the diamond substrate and the third thermal expansion matching layer.
In one embodiment, a second thermal expansion matching layer is further arranged between the diamond substrate and the fourth thermal expansion matching layer.
In one embodiment, the first and second thermal expansion adaptation layers are both metal layers.
In one embodiment, the first and second thermal expansion adaptation layers are one of tin, molybdenum or tungsten layers.
In one embodiment, the first and second thermal expansion adapting layers each have a thickness of 10nm-100 μm.
The terahertz frequency multiplier with the thermal matching structure has the beneficial effects that: compared with the prior art, the terahertz frequency multiplier with the heat matching structure has the advantages that the third heat expansion adapting layer is arranged at the first pressure point of the diamond substrate, the fourth heat expansion adapting layer is arranged at the second pressure point, and materials with lower heat expansion coefficients are selected for the third heat expansion adapting layer and the fourth heat expansion adapting layer, so that heat expansion mismatch between the diamond substrate and the frequency multiplication chip and heat expansion mismatch between the diamond substrate and the metal shell can be effectively improved, and the diamond substrate can be further used in the terahertz frequency multiplier with the heat matching structure, and the purpose of improving heat performance of the frequency multiplier is achieved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a top view of an internal structure of a terahertz frequency multiplier with a thermal matching structure according to an embodiment of the present invention;
fig. 2 is a cross-sectional view of a terahertz frequency multiplier with a thermal matching structure according to an embodiment of the present invention.
Wherein, each reference sign in the figure:
1-a metal housing; 2-a diamond substrate; 3-an input waveguide structure; 4-a filter circuit structure; 5-a first matching circuit structure; 6-frequency doubling chips; 7-a second matching circuit structure; 8-an output waveguide structure; 9-a first thermal expansion adaptation layer; 10-a second thermal expansion adaptation layer; 11-a third thermal expansion adaptation layer; 1101-a first copper layer; 1102-a first molybdenum layer; 1103-second copper layer; 12-a fourth thermal expansion adaptation layer; 1201-a third copper layer; 1202-a second molybdenum layer; 1203-fourth copper layer; 13-waveguide-suspension stripline transition structure; a 14-suspended strip-waveguide transition structure; 15-bonding wire
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1 and fig. 2 together, the terahertz frequency multiplier with the thermal matching structure provided by the present invention will now be described. The terahertz frequency multiplier with the heat matching structure comprises a metal shell 1, a diamond substrate 2 arranged in the inner cavity of the metal shell 1, an input waveguide structure 3, a filter circuit structure 4, a first matching circuit structure 5, a frequency multiplication chip 6, a second matching circuit structure 7 and an output waveguide structure 8 which are arranged on the diamond substrate 2 and sequentially connected, wherein a third heat expansion adaptation layer 11 is arranged at a first-class pressure point corresponding to the frequency multiplication chip 6 on the upper surface of the diamond substrate 2, and a fourth heat expansion adaptation layer 12 is arranged at a second-class pressure point corresponding to the inner cavity of the metal shell 1 on the lower surface of the diamond substrate 2.
Compared with the prior art, the terahertz frequency multiplier with the heat matching structure has the advantages that the third heat expansion adapting layer 11 is arranged at the first type of pressure point of the diamond substrate 2, the fourth heat expansion adapting layer 12 is arranged at the second type of pressure point, and materials with lower heat expansion coefficients are selected for the third heat expansion adapting layer 11 and the fourth heat expansion adapting layer 12, so that heat expansion mismatch between the diamond substrate 2 and the frequency multiplication chip 6 and heat expansion mismatch between the diamond substrate 2 and the metal shell 1 can be effectively improved, and the diamond substrate 2 can be further used in the terahertz frequency multiplier with the heat matching structure, and the purpose of improving heat performance of the frequency multiplier is achieved.
Specifically, the diamond substrate 2 is a rectangular sheet substrate processed by monocrystalline or polycrystalline diamond, and circuit basic elements such as a capacitor, a resistor, an inductor, a transmission line, a transition structure, a pressure point and the like are processed on the substrate to form a circuit for powering the frequency doubling chip 6.
Specifically, the frequency doubling chip 6 adopts a semiconductor nonlinear device chip, and can be a diode or triode chip of a common semiconductor such as GaAs, gaN, inP, si, siC, znO, ga2O3, alN, inN and the like.
Specifically, the metal casing 1 is a part machined by metal such as Cu, al, au, ag, and a cavity structure is arranged inside the metal casing.
Specifically, auxiliary connection between the frequency doubling chip 6 and the diamond substrate 2 is realized by adopting solder or conductive adhesive; the auxiliary connection between the frequency doubling chip 6 and the metal shell 1 is realized by adopting solder or conductive adhesive.
As a specific embodiment of the terahertz frequency multiplier with the thermal matching structure provided by the invention, the third thermal expansion adapting layer 11 is a multilayer composite material adjusting layer. The multilayer composite material regulating layer utilizes a multilayer structure formed by laminating the multilayer composite material regulating layers, and can achieve better comprehensive physical properties than a single layered material through the combination of thermal expansion performance, electric conductivity and heat conductivity among different materials, thereby being beneficial to improving the overall performance of the device.
Referring to fig. 2, as an embodiment of the terahertz frequency multiplier with a thermal matching structure provided in the present invention, the third thermal expansion matching layer 11 includes a first copper layer 1101, a first molybdenum layer 1102 and a second copper layer 1103 that are stacked from top to bottom.
The third thermal expansion adapting layer 11 is actually a copper-molybdenum-copper (Cu/Mo/Cu) material, is a flat composite material with a sandwich structure, can adopt pure molybdenum as a core material, is coated with pure copper or dispersion strengthening copper on both sides, and belongs to a metal base plane layered composite material. The middle molybdenum layer is made of low-expansion material, and the copper layers on the two sides are made of high-electric-conductivity and high-heat-conductivity material layers. The thermal expansion coefficient is adjustable, the thermal conductivity is high, and the high temperature resistance is excellent.
As a specific implementation mode of the terahertz frequency multiplier with the thermal matching structure, in order to ensure the reliability of thermal expansion adaptation, more internal space is not occupied as much as possible, and the thickness of the third thermal expansion adaptation layer 11 is 10nm-100 mu m.
As a specific embodiment of the terahertz frequency multiplier with the thermal matching structure provided by the invention, the fourth thermal expansion adapting layer 12 is a multilayer composite material adjusting layer. The multilayer composite material regulating layer utilizes a multilayer structure formed by laminating the multilayer composite material regulating layers, and can achieve better comprehensive physical properties than a single layered material through the combination of thermal expansion performance, electric conductivity and heat conductivity among different materials, thereby being beneficial to improving the overall performance of the device.
Referring to fig. 2, as an embodiment of the terahertz frequency multiplier with a thermal matching structure provided in the present invention, the fourth thermal expansion matching layer 12 includes a third copper layer 1201, a second molybdenum layer 1202 and a fourth copper layer 1203 stacked from top to bottom. The fourth thermal expansion adapting layer 12 is actually a copper-molybdenum-copper (Cu/Mo/Cu) material, is a flat composite material with a sandwich structure, can adopt pure molybdenum as a core material, is coated with pure copper or dispersion strengthening copper on both sides, and belongs to a metal-based plane layered composite material. The middle molybdenum layer is made of low-expansion material, and the copper layers on the two sides are made of high-electric-conductivity and high-heat-conductivity material layers. The thermal expansion coefficient is adjustable, the thermal conductivity is high, and the high temperature resistance is excellent.
As a specific implementation mode of the terahertz frequency multiplier with the thermal matching structure, in order to ensure the reliability of thermal expansion adaptation, and simultaneously occupy no more internal space as much as possible, the thickness of the fourth thermal expansion adaptation layer 12 is 10nm-100 μm.
Referring to fig. 2, as a specific embodiment of the terahertz frequency multiplier with a thermal matching structure provided by the present invention, in order to further improve the thermal expansion adaptability between the frequency multiplication chip 6 and the diamond substrate 2, a first thermal expansion matching layer 9 is further disposed between the diamond substrate 2 and the third thermal expansion matching layer 11.
Referring to fig. 2, as a specific embodiment of the terahertz frequency multiplier with a thermal matching structure provided by the present invention, in order to further improve the thermal expansion adaptability between the metal housing 1 and the diamond substrate 2, a second thermal expansion matching layer 10 is further disposed between the diamond substrate 2 and the fourth thermal expansion matching layer 12.
As a specific embodiment of the terahertz frequency multiplier with the thermal matching structure provided by the invention, the first thermal expansion matching layer 9 and the second thermal expansion matching layer 10 are both metal layers. The metal material has good toughness, conductivity and lower thermal expansion coefficient, and is more suitable for being used as an adapting layer of a device.
As a specific embodiment of the terahertz frequency multiplier with the thermal matching structure provided by the invention, the first thermal expansion matching layer 9 and the second thermal expansion matching layer 10 are one of tin layers, molybdenum layers or tungsten layers. The thermal expansion coefficient can meet the use requirement, and the heat conduction performance and the structural stability are also good.
In order to ensure the reliability of thermal expansion adaptation and simultaneously occupy no more internal space as much as possible, the thickness of the first thermal expansion adaptation layer 9 and the second thermal expansion adaptation layer 10 is 10nm-100 μm.
The preparation process comprises the following steps:
a layer of tin layer (first thermal expansion adapting layer 9) is prepared on a first type of pressure point on the diamond substrate 2, which needs to be connected with the frequency doubling chip 6, in the assembly process, firstly, a copper-molybdenum-copper material (third thermal expansion adapting layer 11) is assembled on the first type of pressure point corresponding to the frequency doubling chip 6 by adopting solder, and then, the copper-molybdenum-copper material (third thermal expansion adapting layer 11) of the frequency doubling chip 6 is connected on the tin layer (first thermal expansion adapting layer 9) on the diamond substrate 2 by adopting solder.
A tin layer (second thermal expansion matching layer 10) is prepared on the pressing point, which needs to be connected with the metal shell 1, on the diamond substrate 2, and in the assembly process, firstly, a copper-molybdenum-copper material (fourth thermal expansion matching layer 12) is assembled on the metal shell 1 by adopting solder, and then, the tin layer (second thermal expansion matching layer 10) on the diamond substrate 2 is connected on the copper-molybdenum-copper material (fourth thermal expansion matching layer 12) by adopting solder.
Referring to fig. 1, as an embodiment of the terahertz frequency multiplier with a thermal matching structure provided in the present invention, a filter circuit structure 4 is connected to an input waveguide structure 3 through a waveguide-suspended strip line transition structure 13 extending into the input waveguide structure 3.
Referring to fig. 1, as an embodiment of the terahertz frequency multiplier with a thermal matching structure provided in the present invention, the second matching circuit structure 7 is connected to the output waveguide structure 8 through a suspended strip line-waveguide transition structure 14 extending into the output waveguide structure 8.
Referring to fig. 1 and 2, as a specific embodiment of the terahertz frequency multiplier with a thermal matching structure provided by the present invention, a bonding wire 15 connected to the metal case 1 is disposed on the second thermal expansion matching layer 10.
When in operation, a low-frequency signal enters from the input waveguide structure 3, enters into the suspended microstrip line through the waveguide-suspended strip line transition structure 13, enters into the frequency doubling chip 6 through the filter circuit structure 4 and the first matching circuit structure 5, forms higher harmonics, and the higher harmonics enter into the output waveguide structure 8 through the second matching circuit structure 7 and the suspended strip line-waveguide transition structure 14 and are output by the output waveguide structure 8.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (9)
1. Terahertz frequency multiplier with heat matching structure, its characterized in that: the device comprises a metal shell, a diamond substrate arranged in an inner cavity of the metal shell, an input waveguide structure, a filter circuit structure, a first matching circuit structure, a frequency doubling chip, a second matching circuit structure and an output waveguide structure which are arranged on the diamond substrate and sequentially connected, wherein a third thermal expansion adaptation layer is arranged at a first-class pressure point corresponding to the frequency doubling chip on the upper surface of the diamond substrate, and a fourth thermal expansion adaptation layer is arranged at a second-class pressure point corresponding to the inner cavity of the metal shell on the lower surface of the diamond substrate; the third thermal expansion adapting layer and the fourth thermal expansion adapting layer are both multilayer composite material regulating layers.
2. The terahertz frequency multiplier with a thermal matching structure of claim 1, wherein: the thickness of the third thermal expansion adapting layer and the fourth thermal expansion adapting layer is 10nm-100 μm.
3. The terahertz frequency multiplier with a thermal matching structure of claim 1, wherein: the third thermal expansion adapting layer comprises a first copper layer, a first molybdenum layer and a second copper layer which are distributed in a laminated mode from top to bottom.
4. The terahertz frequency multiplier with a thermal matching structure of claim 1, wherein: the fourth thermal expansion adapting layer comprises a third copper layer, a second molybdenum layer and a fourth copper layer which are distributed in a laminated mode from top to bottom.
5. The terahertz frequency multiplier with a thermal matching structure of claim 1, wherein: and a first thermal expansion adapting layer is arranged between the diamond substrate and the third thermal expansion adapting layer.
6. The terahertz frequency multiplier with a thermal matching structure of claim 5, wherein: and a second thermal expansion adapting layer is arranged between the diamond substrate and the fourth thermal expansion adapting layer.
7. The terahertz frequency multiplier with a thermal matching structure of claim 6, wherein: the first thermal expansion adapting layer and the second thermal expansion adapting layer are both metal layers.
8. The terahertz frequency multiplier with a thermal matching structure of claim 7, wherein: the first thermal expansion adapting layer and the second thermal expansion adapting layer are one of tin layers, molybdenum layers or tungsten layers.
9. The terahertz frequency multiplier with a thermal matching structure of claim 6, wherein: the thickness of the first thermal expansion adapting layer and the second thermal expansion adapting layer is 10nm-100 μm.
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| CN112993054B (en) * | 2021-02-05 | 2022-09-20 | 中国电子科技集团公司第十三研究所 | Frequency multiplier and preparation method thereof |
| CN114665823B (en) * | 2022-02-28 | 2023-06-09 | 电子科技大学 | Terahertz frequency tripling circuit structure of return wave type |
| CN115037250B (en) * | 2022-08-11 | 2022-11-04 | 壹新信通科技(成都)有限公司 | Terahertz multi-tube-core frequency multiplier and electronic equipment |
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