JP4018575B2 - Semiconductor built-in millimeter-wave band module - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a module with a built-in semiconductor, and in particular, a semiconductor element that operates in a microwave band or a millimeter wave band (hereinafter referred to as a “semiconductor element that operates in a millimeter wave band”) is disposed inside an electrically insulating substrate. The present invention relates to a semiconductor built-in module.
[0002]
[Prior art]
In recent years, with the demand for higher performance and smaller size of electronic devices, higher density and higher functionality of circuit components are further desired. For this reason, there is a demand for a circuit board corresponding to high density and high functionality of circuit components. In particular, as a method for increasing the density of circuit components including semiconductor elements, a module with a built-in circuit parts capable of incorporating semiconductor elements by using an electrically insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin has been proposed. (Patent Documents 1 and 2).
[0003]
On the other hand, as a package that can efficiently dissipate heat from semiconductor elements operating in the millimeter wave band by transferring heat efficiently to the outside, a semiconductor is mounted in the concave part of a concave ceramic package with a multilayer wiring layer inside A configuration in which a cavity is provided using a plate-shaped lid, or a configuration in which a semiconductor element is mounted on a flat multilayer substrate and a cavity is provided between the flat multilayer substrate using a lid provided with a recess Is. Furthermore, as an example of high heat dissipation efficiency, a method has been proposed in which a semiconductor element is brought into surface contact with a high thermal conductivity material (Patent Document 3).
[0004]
[Patent Document 1]
Japanese Patent Laid-Open No. 11-220262
[0005]
[Patent Document 2]
Patent No. 3051700
[0006]
[Patent Document 3]
Japanese Patent No. 2856192
[0007]
[Problems to be solved by the invention]
However, in the configuration in which the conventional high thermal conductivity material is in surface contact with the semiconductor element, when the semiconductor element is mounted face-up on the wiring substrate, the active surface of the semiconductor element is covered with the high thermal conductivity material. The effective dielectric constant at the active surface is higher than that of air. As a result, there is a problem that the characteristics of the semiconductor element change.
[0008]
Also, when trying to reduce the size of a semiconductor device that operates in the millimeter wave band, it is not possible to efficiently dissipate heat. Therefore, the conventional configuration cannot sufficiently dissipate heat, and the reliability of a module with a built-in device is high. There has been a problem of lowering, and it has been difficult to simultaneously reduce the size of semiconductor elements and circuit components that operate in the millimeter wave band while increasing the heat dissipation efficiency.
[0009]
In order to solve the above-mentioned conventional problems, the present invention efficiently dissipates heat from a semiconductor element operating in the millimeter wave band to enhance the heat dissipation effect, and at the same time, mounts semiconductor elements and circuit components at high density. An object is to provide a semiconductor built-in millimeter-wave band module.
[0010]
[Means for Solving the Problems]
In order to achieve the above object, the semiconductor built-in millimeter-wave band module of the present invention includes:
An electrically insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin;
A high thermal conductivity substrate made of a dielectric material having a higher thermal conductivity than the electrically insulating substrate, and laminated on one surface of the electrically insulating substrate;
A plurality of wiring patterns formed on the high thermal conductive substrate and the electrically insulating substrate;
A semiconductor element that is disposed inside the electrically insulating substrate, is face-up mounted on the high thermal conductivity substrate, and is electrically connected to the wiring pattern;
A distributed constant circuit element and an active element provided on the semiconductor element,
An air gap is provided inside the electrically insulating substrate and outside the surface of the distributed constant circuit element and the active element.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
The present invention includes an electrically insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin, a highly thermally conductive substrate made of a dielectric material having a higher thermal conductivity than the electrically insulating substrate, the highly thermally conductive substrate, and the A plurality of wiring patterns formed on an electrically insulating substrate; and a microwave or a millimeter disposed inside the electrically insulating substrate, face-up mounted on the high thermal conductivity substrate, and electrically connected to the wiring pattern A semiconductor element that operates by a wave, and a gap is provided around the passive circuit element and the active element by the wiring pattern on the semiconductor element inside the electrically insulating substrate. As a result, heat from the semiconductor element operating in the millimeter wave band can be efficiently dissipated to enhance the heat dissipating effect, and at the same time, semiconductor elements and circuit components can be mounted at high density, and the size can be reduced.
[0012]
According to the semiconductor built-in millimeter-wave band module of the present invention, the semiconductor element and the heat sink can be connected in the shortest distance, and the electrical wiring and the thermal radiation path can be provided in different directions. For this reason, compared with the case where the semiconductor element is die-bonded on the conventional metal base plate, heat can be radiated with high efficiency. Moreover, electrical wiring can be freely arranged. In addition, since a cavity is formed around the surface of the semiconductor element on which the distributed constant circuit element is provided, it is not affected by the resin composition forming the electrically insulating substrate by incorporating the semiconductor element. In addition, the high frequency characteristics of the semiconductor element can obtain characteristics equivalent to those of the bare chip state. Further, since the semiconductor element is shielded from the outside air, a highly reliable semiconductor built-in millimeter-wave band module can be obtained.
[0013]
The inorganic filler contained in the mixture constituting the electrically insulating substrate is Al. ₂ O _Three , BeO, BN, SiC, AlN and SiO ₂ It is desirable to include at least one inorganic filler selected from. By using these inorganic fillers, an electrically insulating substrate excellent in heat dissipation can be obtained. Further, by selecting an inorganic filler, the thermal expansion coefficient of the electrically insulating substrate can be adjusted to match the thermal expansion coefficient of the semiconductor element, so that a highly reliable semiconductor built-in millimeter-wave band module can be obtained. Here, the resistance value of the electrically insulating substrate is 1 × 10 at room temperature (25 ° C.). ^Ten Ω · m or more.
[0014]
Also, the high thermal conductivity substrate is Al ₂ O _Three It is desirable that it is made of at least one kind of ceramic selected from BeO, BN, AlN, and SiC. By using these materials, a high heat conductive substrate having excellent heat dissipation can be obtained. Here, the high thermal conductive substrate is a substrate formed of a dielectric material having a thermal conductivity higher than that of the electrically insulating substrate, for example, Al. ₂ O _Three (18 to 33 W / m · K), BeO (260 W / m · K), BN (600 W / m · K), AlN (150 to 210 W / m · K), SiC (200 to 280 W / m · K) is there.
[0015]
The semiconductor element is preferably composed of at least one semiconductor selected from substances including Si, GaAs, SiGe, InP, and SiC. By using these semiconductor elements, a semiconductor built-in millimeter-wave band module having excellent frequency characteristics in a high frequency region can be obtained.
[0016]
Moreover, it is desirable that the semiconductor element be shielded from the outside air by the electrically insulating substrate. By blocking the semiconductor element from the outside air, it is possible to prevent a decrease in reliability of the semiconductor element due to humidity.
[0017]
In the module of the present invention, a second high thermal conductive substrate may be laminated on the other surface of the electrically insulating substrate. If it does in this way, the influence of the curvature of the whole module with respect to the temperature change at the time of use can be prevented by providing the high heat conductive board | substrate on both sides of the electrically insulating board | substrate. Furthermore, even when the high thermal conductive substrate is thinned, the influence of warpage can be prevented. Further, even when a film-like resin material is used, warpage can be prevented, and the overall height or total thickness of the module can be reduced. As a result, the physical distance between the semiconductor element and the heat sink can be shortened. Therefore, when the thermal via hole for heat dissipation is provided in the high thermal conductive substrate directly under the semiconductor element, the semiconductor element can be radiated more efficiently.
[0018]
In the module, an air gap may be formed around the second high thermal conductive substrate. In this manner, in the process of manufacturing the semiconductor built-in millimeter-wave band module, the first through hole and the second through hole for forming a cavity, which will be described in the manufacturing method of the first embodiment described later, are provided. When producing a plate-like body filled with a conductive resin composition, a first through-hole is formed by filling the conductive resin composition after forming the second through hole in one mixture, and then forming a cavity. The plate-like body can be produced by forming through-holes, and the semiconductor built-in millimeter-wave band module can be more efficiently produced.
[0019]
In addition, a low-loss substrate made of a material having a lower dielectric loss than the electrically insulating substrate is provided on the other surface of the electrically insulating substrate, and a plurality of wiring patterns formed on the low-loss substrate, and the electrical insulation An air gap may be provided between the filter element disposed inside the conductive substrate and provided on the low-loss substrate and a region in contact with the surface of the filter element. In this way, heat can be radiated with high efficiency, and at the same time, electrical wiring can be freely arranged. Further, the high frequency characteristics of the semiconductor element can be obtained with characteristics equivalent to those of the bare chip state. Furthermore, even if the filter element is built in, a gap is formed around the filter element, so that even if the filter element is built in, it is not affected by the resin composition forming the electrically insulating substrate. For this reason, a low-loss filter element can be built in and can be connected to the semiconductor element in the shortest possible time. As a result, loss due to connection can be reduced.
[0020]
The low loss substrate is made of Al. ₂ O _Three , BeO, BN, AlN and SiC are preferable. The low loss substrate has a heat distortion temperature of 180 ° C. or higher, preferably 200 ° C. or higher. The reason why the heat distortion temperature is set to 180 ° C. or higher is that a temperature of up to 175 ° C. may be applied in the stacking step when forming the module of the present invention. Examples of the heat-resistant resin that can be used in the present invention include a fluororesin, a polyimide (PI) resin, an aramid resin (including meta and para), a polyester resin, a polyamideimide resin, a polyesterimide resin, and a polyetherketone (PEK) resin. , Polyether ether ketone (PEEK) resin, polysulfone (PS) resin, bismaleimide triazine resin, polyphenylene ether (PPE) resin, polyphenylene sulfide (PPS) resin, polybenzimidazole, liquid crystal polymer and polybenzocyclobutene One type of resin can be mentioned. Examples of the fluororesin include polytetrafluoroethylene (PTFE), tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer (PFA), polychlorotrifluoroethylene (PCTFE), polyvinylidene fluoride (PVDF), polyvinyl fluoride ( PVF), tetrafluoroethylene-hexafluoropropylene copolymer (FEP), tetrafluoroethylene-ethylene copolymer (PETFE), and the like. If it is the said material, the insertion loss of the filter element produced on a low loss board | substrate can be reduced, and a high performance filter can be obtained.
[0021]
In the above, for example, the dielectric constant of the electrically insulating substrate formed by blending 90% by weight of alumina powder having an average particle diameter of 12 μm, 8% by weight of bisphenol A type epoxy resin and 2% by weight of the curing agent is about 0.02. However, the dielectric constant of the low-loss substrate as described above is about 0.002.
[0022]
In the semiconductor built-in millimeter-wave band module according to the present invention, the distributed constant circuit element and the active element provided on the semiconductor element and the filter element provided on the low dielectric loss substrate are provided in the same gap. It may be. In this way, it is possible to efficiently manufacture a semiconductor built-in millimeter-wave band module that incorporates a semiconductor element and a filter element.
[0023]
Further, a shield conductor may be provided on a surface facing the distributed constant circuit element in the gap. As a result, in addition to being able to prevent leakage of signals between the semiconductor element and the filter element by the shield conductor, deformation of the void shape due to softening of the resin during void formation in manufacturing a semiconductor built-in millimeter-wave band module. Can be reduced.
[0024]
The shield electrode may be shared by a plurality of gaps. As a result, the number of layers of the electrical insulator substrate can be reduced and manufacturing can be performed efficiently.
[0025]
Moreover, you may provide the circuit component arrange | positioned inside the said electrically insulating board | substrate and electrically connected to the said wiring pattern. As a result, even if the circuit component is built in, the connection distance between the semiconductor element and the circuit component can be shortened, thereby reducing the noise of the electric signal and obtaining a semiconductor built-in millimeter-wave band module with excellent high frequency characteristics. Can do. Furthermore, since circuit components whose characteristics are guaranteed in advance are built in, a module with a high manufacturing yield and high reliability can be realized.
[0026]
Note that the circuit component is preferably shielded from the outside air by the electrically insulating substrate. By shutting off the circuit components from the outside air, it is possible to prevent a reduction in the reliability of the circuit components due to humidity.
[0027]
Still another semiconductor built-in millimeter-wave band module according to the present invention includes first and second electrically insulating substrates made of a mixture containing an inorganic filler and a thermosetting resin, and higher heat than the first electrically insulating substrate. A high thermal conductive substrate made of a dielectric material having conductivity and laminated on one surface of the first electrically insulating substrate, and first and second materials made of a material having a lower dielectric loss than the first electrically insulating substrate. Two low-loss substrates, the high thermal conductivity substrate, the first and second electrically insulating substrates, a plurality of wiring patterns formed on the first and second low-loss substrates, and the first electrically insulating material A semiconductor element disposed in a substrate, face-up mounted on the high thermal conductivity substrate and electrically connected to the wiring pattern, and operating in a millimeter wave band; a distributed constant circuit element provided on the semiconductor element; An active element; A gap around the distributed constant circuit element and the active element on the semiconductor element, and a wiring pattern of the second low-loss board disposed inside the second electrically insulating board The first low-loss substrate is laminated on the other surface of the first electrically insulating substrate, and the second electrically insulating substrate is the first electrically insulating substrate. It is laminated between a low-loss substrate and the second low-loss substrate.
[0028]
According to this semiconductor built-in millimeter-wave band module, the semiconductor element can efficiently dissipate heat, and characteristics equivalent to those of the bare chip state can be obtained. In addition, it can be connected to a low-loss filter with a short wiring and has excellent high-frequency characteristics. Furthermore, in addition to high yield and reliability during manufacturing, the wiring length between circuit components mounted on multiple low dielectric loss substrates and semiconductor elements or filter elements, etc. The connection can be made extremely short as compared to the case where the two-dimensional arrangement is not performed. Therefore, signal loss due to wiring can be reduced, and the mounting area of modules having the same function can be reduced to reduce the size and mount circuit components at high density.
[0029]
Still another semiconductor built-in millimeter-wave band module of the present invention comprises an electrically insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin, and a dielectric material having a higher thermal conductivity than the electrically insulating substrate, A highly thermally conductive substrate laminated on one surface of the electrically insulating substrate, a low loss substrate made of a material having a lower dielectric loss than the electrically insulating substrate, and laminated on the other surface of the electrically insulating substrate; A plurality of wiring patterns formed on the high thermal conductivity substrate, the electrically insulating substrate and the low loss substrate, a high frequency signal output terminal and an external signal input terminal provided on the high thermal conductivity substrate or the low loss substrate, A semiconductor element that is disposed inside the electrically insulating substrate and is face-up mounted on the high thermal conductivity substrate and electrically connected to the wiring pattern; A distributed constant circuit element and an active element provided on a conductor element; a filter element disposed inside the electrically insulating substrate and provided on the low-loss substrate; and the interior of the electrically insulating substrate and the A gap is provided around the distributed constant circuit element and the active element on the semiconductor element and the filter element, and the external signal input terminal and the input terminal of the filter element are electrically connected, and the filter element The output terminal of the semiconductor element and the input terminal of the semiconductor element are electrically connected, and the output terminal of the semiconductor element and the high-frequency signal output terminal are electrically connected.
[0030]
According to this semiconductor built-in millimeter-wave band module, when the semiconductor element is a high-power power amplifier, a single-chip semiconductor built-in millimeter-wave band module can provide a transmission module that combines the transmission functions into one. When composing a communication device, the number of parts can be reduced. Further, when the semiconductor element is a low noise amplifier, a receiving module can be obtained. Furthermore, in a semiconductor built-in millimeter-wave band module using a plurality of semiconductor elements, a millimeter-wave band front-end module integrated with a transmission / reception function can be obtained.
[0031]
Hereinafter, specific embodiments of a semiconductor built-in millimeter-wave band module according to the present invention will be specifically described with reference to the drawings. In the following embodiments, the parts given the same reference numerals indicate the same parts, and therefore the description may be omitted.
[0032]
(First embodiment)
FIG. 1 is a cross-sectional view schematically showing a configuration of a semiconductor built-in millimeter-wave band module according to the first embodiment of the present invention.
[0033]
Hereinafter, the semiconductor built-in millimeter-wave band module according to the present embodiment will be described with reference to FIG. In FIG. 1, a semiconductor element 101 is mounted face-up on a high thermal conductive substrate 103, and a wiring pattern 119 formed on the high thermal conductive substrate 103 and a bypass capacitor mounted on the wiring pattern 119 are connected via wires 131. It is electrically connected by wire bonding.
[0034]
The semiconductor element 101 is a semiconductor element that operates in a millimeter wave band. The millimeter wave band is generally 30 GHz or higher, for example, 32 GHz, 60 GHz, 72 GHz, or the like. There is 26 GHz as a special thing.
[0035]
On the semiconductor element 101, an active element 124 and a passive circuit element using a pattern (hereinafter referred to as “matching circuit using a wiring or a stub for connecting the active elements, a coupling line, a filter, a bias stub, etc.”). "Distributed constant circuit element") 121 is formed. In the above, the stub is a wiring provided with a branch portion for adjusting the impedance of the wiring, and the end is electrically connected to the ground layer using an open terminal or a via hole. For example, by adjusting the length of the wiring from the branching portion to ¼ of the wavelength of the signal to propagate and opening or shorting the wiring end, the branching portion is short-circuited or opened, respectively. These are particularly connected to the input terminal and output terminal of the transistor and used for adjusting the input / output impedance. The active element 124 is a bipolar transistor, FET (Field Effect Transistor), diode, or the like.
[0036]
A space 107 is formed in a region where the electrically insulating substrate 105 made of a mixture containing an inorganic filler and a thermosetting resin and the distributed constant circuit element 121 and the active element 124 provided on the semiconductor element 101 are in contact with each other.
[0037]
The gap 107 is for preventing at least the distributed constant circuit 121 and the active element 124 on the semiconductor element from coming into contact with the electrically insulating substrate 105, and the size and shape of the gap are not particularly limited. Preferably, the minimum gap between the wall of the gap 107 and each element is a space of about 100 μm or more. Since the distributed constant circuit and the active element are usually designed and created on the assumption that they are in contact with air (dielectric constant 1), it is necessary to provide a gap. However, the shape of the gap is preferably constant. Further, in order to manufacture the module in a compact manner, it is preferable that the space is a constant space with a minimum necessary gap.
[0038]
The shape of the gap is provided in a portion where wirings and active elements provided on the semiconductor element are arranged, and may be arbitrarily changed depending on the arrangement thereof. For example, in a GaAs 26 GHz band high-power amplification semiconductor device (power consumption 5 W, output at 1 dB gain compression point is 30 dBm), a plurality of amplifiers are built in one chip, and the distribution for synthesizing the output power of each amplifier The constant line (see FIG. 14) is also an MMIC (Monolithic Microwave Integrated Circuits) formed in the same chip. FIG. 14 schematically shows a circuit diagram of an example of a Wilkinson divider / combiner using distributed constant lines. A signal having a wavelength of λ is input from the input port 161, and the signal is distributed and output from the first output port 162 and the second output port 163, respectively. In the case of a system in which a load of 50Ω is connected to each of the first output port and the second output port, the characteristic impedance is 70.7Ω between the input port and the output port, and the wavelength of the input signal is 1 A first distributed constant line 171 and a second distributed constant line 172 having a length of / 4 are provided. A 100Ω resistor 173 is connected between the first output port and the second output port. With this configuration, half the power of the input signal is output from the first output port and the second output port in the same phase. When such a first distributed constant line and a second distributed constant line are provided on a semiconductor element, a configuration of a microstrip line is usually taken. In this case, the line through which the signal propagates is manufactured so that the impedance becomes a desired value while being in contact with the air layer. When the resin layer is formed in the region in contact with the microstrip line, the effective dielectric constant changes compared to the state in which the air layer is provided, so that the characteristic impedance deviates from a desired value. In addition, since the electromagnetic wave has a property that the wavelength changes depending on the dielectric constant of the medium in the medium, when the resin layer is provided on the surface of the microstrip line, the air layer is provided. The wavelength is shorter than For this reason, the first distributed constant line and the second distributed constant line are no longer a quarter of the wavelength. As a result, a part of the input signal is output to the input port and the rest is output to the output port, so that it cannot be efficiently distributed. Therefore, a gap is provided in a region where the active element and the distributed constant line provided in the semiconductor element are formed.
[0039]
FIG. 15 is a top view schematically showing the relationship between the semiconductor element, the active element provided on the semiconductor element, the distributed constant circuit element, and the air gap. The semiconductor element 101 is mounted face up on the high thermal conductive substrate 103. The input side wiring pattern 181 and the output side wiring pattern 182 provided on the high thermal conductive substrate 103 are wire-bonded via pads 191a and 191b on the semiconductor element 101 and wires 131a and 131b. Further, the bypass capacitor 133 mounted on the wiring pattern 119 and the pad 191c are also connected through the wire 131c. A plurality of active elements 124 and a plurality of distributed constant circuit elements 121 are provided on the semiconductor element 101. The active elements 124 are FETs, for example, and are electrically connected via the distributed constant circuit element 121 in order to efficiently distribute and combine the power of the signals amplified by the FETs. A gap is provided inside the portion surrounded by the dotted line A. The active element 124 and the distributed constant circuit element 121 that connects the active elements are always formed in the gap.
[0040]
Furthermore, by providing an electrically insulating substrate so as to be in contact with a part of the region on the semiconductor element and making the minimum width of the gap dimension smaller than that of the semiconductor element, the gap can be formed stably. As a result, the effective dielectric constant of the active element and the distributed constant line provided on the semiconductor element is stabilized. In this case, a part of the semiconductor element is embedded in the electrically insulating substrate. When the dimension of the air gap is changed, the effective dielectric constant changes because the electromagnetic field distribution of the active element and the distributed constant line changes. Therefore, when the wiring formed in the gap is a distributed constant line, the signal impedance changes because the characteristic impedance changes.
[0041]
In the region where the distributed constant circuit 121 and the active element 124 are not present on the semiconductor element, the electrically insulating substrate 105 may be in contact with the surface of the semiconductor element 101 as shown in FIG.
[0042]
The wiring pattern 119 formed on the high thermal conductive substrate 103 via the via conductor 111 is electrically connected to the external electrode 113 provided on the electrically insulating substrate 105. On the surface of the high thermal conductive substrate 103 facing the semiconductor element 101, a heat sink 115 for heat dissipation is integrated and mounted by an adhesive layer 104. The heat sink uses aluminum die casting or the like, and fins or the like are provided so as to increase the surface area and easily release heat. The shape of the fin is arbitrarily used depending on the heat generation amount of the heating element, the ambient temperature during use, and the thermal resistance from the heating element to the heat sink connection. For example, as the shape of the fin, a thickness of 0.5 to 2 mm and a height of 2 to 90 mm are used as necessary. The high heat conductive substrate and the heat sink can be bonded to the heat sink on the high heat conductive substrate with a thickness of 200 μm or less by printing or other methods using Shin-Etsu Chemical's high heat conductive silicone oil compound (trade name) “G765”. Supply, then stack heat sink, eg 1 × 10 ^Five Pressurize with Pa pressure. As a result, the heat sink can be bonded to the high thermal conductive substrate. Further, the heat sink can be shared by a housing made of metal such as aluminum to which heat of the semiconductor built-in millimeter-wave band module is transmitted (FIG. 17). The heat sink 115 may be attached as necessary. The same applies to the following embodiments.
[0043]
In FIG. 1, an electrically insulating substrate 105 is made of a mixture containing an inorganic filler and a thermosetting resin. For the inorganic filler, for example, Al ₂ O _Three , BeO, BN, SiC, AlN and SiO ₂ At least one selected from the above can be used. The inorganic filler is preferably in the range of 70% by weight to 95% by weight with respect to the mixture. Moreover, it is preferable that the average particle diameter of an inorganic filler is 0.1 micrometer-100 micrometers or less. As the thermosetting resin, for example, an epoxy resin, a phenol resin, or a cyanate resin having high heat resistance can be selected. Epoxy resins are particularly preferred because of their particularly high heat resistance. The mixture may further contain a dispersant, a colorant, a coupling agent or a release agent.
[0044]
Specifically, an electrically insulating substrate having a thickness of 200 μm was prepared by blending 90% by weight of alumina powder having an average particle size of 12 μm, 8% by weight of bisphenol A type epoxy resin and 2% by weight of a curing agent.
[0045]
The wiring pattern 119 is made of a material having electrical conductivity, and is formed of, for example, a copper foil or a conductive resin composition. When a thin film conductor is used as the wiring pattern, a conductor made of Ni / Cr, Au is formed on the heat conductive substrate 103 by sputtering or the like.
[0046]
The wiring pattern 119 on the thermally conductive substrate 103 that transmits a high-frequency signal is a high-frequency transmission line such as a microstrip line or a coplanar line.
[0047]
The semiconductor element 101 is die-bonded to the high thermal conductive substrate 103 using a resin composition made of a mixture containing a metal filler or an inorganic filler and a thermosetting resin, or solder. As the solder, lead tin eutectic solder, high temperature solder, gold tin solder or the like can be used, and as the resin composition, for example, epoxy resin, phenol resin or cyanate resin having high heat resistance can be selected. For example, silver, silver palladium, copper, Al as filler ₂ O _Three , BeO, BN, SiC, AlN and SiO ₂ Etc. can be used. Gold tin solder or the like is particularly preferable because the thermal resistance between the semiconductor element 101 and the high thermal conductive substrate 103 can be lowered. Specifically, a GaAs semiconductor element was die-bonded to an AlN substrate having a thickness of 500 μm using ribbon-shaped AnSn solder (Au 80 wt%) having a thickness of 30 μm.
[0048]
In the semiconductor built-in millimeter-wave band module shown in FIG. 1, since the air gap 107 is formed around the passive circuit element 121 using the active element or pattern provided in the semiconductor element 101, the high frequency of the semiconductor element 101 alone is formed. Compared with the characteristics, the characteristics do not change even when the semiconductor built-in millimeter-wave band module is used.
[0049]
At the same time, since the back surface of the semiconductor element 101 is bonded to the high thermal conductive substrate 103 using a material having a low thermal resistivity, it is possible to efficiently dissipate heat and enhance the heat radiation effect.
[0050]
In the semiconductor built-in millimeter-wave band module, by selecting an inorganic filler used for the electrically insulating substrate 105, the linear expansion coefficient, thermal conductivity, dielectric constant, etc. of the electrically insulating substrate 105 can be easily controlled. . If the linear expansion coefficient of the electrically insulating substrate 105 is substantially equal to that of the thermally conductive substrate 103, it is possible to prevent the occurrence of cracks and the like due to temperature changes, and thus a highly reliable semiconductor built-in millimeter-wave band module can be obtained.
[0051]
Further, in the semiconductor built-in millimeter-wave band module, the semiconductor element 101 can be shielded from the outside air by the electrically insulating substrate 105, so that a decrease in reliability due to humidity can be prevented. In addition, since the semiconductor built-in millimeter-wave band module of this embodiment uses a mixture of an inorganic filler and a thermosetting resin as the material of the electrically insulating substrate 105, it is necessary to fire at a high temperature unlike a ceramic substrate. Absent.
[0052]
Next, an example of a method for manufacturing the semiconductor built-in millimeter-wave band module of the present invention will be described with reference to FIGS. 2A to 2G. 2A to 2G are sectional views showing an embodiment of a manufacturing process of a semiconductor built-in millimeter-wave band module.
[0053]
First, as shown in FIG. 2A, a plate-like mixture sheet 150a was formed by processing a mixture containing an inorganic filler and a thermosetting resin. The plate-like mixture sheet 150a can be formed by mixing an inorganic filler and an uncured thermosetting resin to form a paste-like kneaded product, and molding the paste-like kneaded product to a constant thickness. The plate-like mixture sheet 150a may be heat-treated at the curing temperature of the thermosetting resin. For example, when a thermosetting epoxy resin was used, the heat treatment condition was that the temperature was maintained at 120 ° C. for 15 minutes. Since the thermosetting epoxy resin has a curing start temperature of 130 ° C., it is in a semi-cured state or a partially cured state (B stage) under the heat treatment condition, and can be melted again by heating in the subsequent steps. By performing the heat treatment as described above, the adhesiveness can be removed while maintaining the flexibility of the mixture sheet 150a, so that the subsequent processing becomes easy. In addition, in a mixture in which a thermosetting resin is dissolved with a solvent, a part of the solvent can be removed by heat treatment.
[0054]
Thereafter, as shown in FIG. 2B, first through holes 140 were formed at desired positions of the mixture sheet 150b. The first through-hole 140 can be formed by, for example, laser processing, drilling, or die processing. Laser processing is preferable because the first through-holes 140 can be formed with a fine pitch and no shavings are generated. In laser processing, if a carbon dioxide laser or excimer laser is used, processing is easy.
[0055]
The first through-hole 140 is formed in a region where the active element on the semiconductor element and the distributed constant circuit element using the wiring pattern are in contact with each other when the first through-hole 140 is stacked after being stacked on a high thermal conductive substrate provided with a semiconductor element described later. It is desirable to do.
[0056]
Next, the mixture sheet 150b provided with the first through hole 140 and the mixture sheet 150a provided with no through hole are aligned and overlapped to obtain 9.8 × 10. ^Five It integrated by pressurizing with Pa.
[0057]
Thereafter, as shown in FIG. 2C, second through holes 141 were formed at desired positions of the integrated mixture sheet 150c. The second through hole 141 was formed using the same method as that for the first hole 140. The second through-hole 141 may be formed at the same time when the paste-like kneaded product is formed to form the plate-like mixture sheet 150c.
[0058]
Thereafter, as shown in FIG. 2D, the second through-hole 141 is filled with the conductive resin composition 142 to form a plate-like body in which the second through-hole 141 is filled with the conductive resin composition 142. did.
[0059]
In parallel with the steps of FIGS. 2A to 2D, a high thermal conductive substrate 103 was prepared as shown in FIG. 2E. Al as its material ₂ O _Three , BeO, BN, SiC, AlN and SiO ₂ Etc. can be used. AlN, SiC and the like are preferable because of their high heat dissipation effect. The semiconductor element 101 made of GaAs, InP, or the like was die-bonded to such a high thermal conductive substrate 103 and then wire-bonded to the wiring pattern 119 with the wire 131.
[0060]
As the semiconductor element 101, for example, a GaAs semiconductor element having dimensions of 4 mm in length, 2.5 mm in width, 50 μm in thickness, and power consumption of 5 W was used. A die-bonding was performed on an AlN substrate having a thickness of 500 μm using ribbon-shaped AnSn solder (Au 80 wt%) having a thickness of 30 μm. When die bonding was performed, the semiconductor element was positioned with a carbon jig in a nitrogen atmosphere and maintained at 320 ° C. for 10 seconds. When the semiconductor element is die-bonded, if it is joined with an alloy-based solder, a stress is generated in the joint due to the difference in thermal expansion coefficient. Therefore, a material system in which the thermal expansion coefficients of the semiconductor element and the die bonding substrate are combined can be selected. Then, after supplying the epoxy technology conductive epoxy adhesive (trade name) “H20E” onto the AlN substrate by the dispensing method, a 0.5 mm square bypass capacitor is mounted and cured by holding at a temperature of 150 ° C. for 15 minutes. The bypass capacitor 133 was mounted on the AlN substrate. Thereafter, the semiconductor element, the wiring 119 on the AlN substrate, and the bypass capacitor 133 were wire-bonded on a heater stage having a temperature of 150 ° C. using an Au wire having a wire diameter of 25 μm. For die bonding, a resin composition in which a metal such as silver is dispersed can be used, but gold tin solder, lead tin solder, or the like can be used in order to enhance the heat dissipation effect. Similarly, the distributed constant circuit element 121 and the active element 124 were mounted on the AlN substrate by die bonding.
[0061]
Thereafter, the high heat dissipation substrate 103 on which the semiconductor element 101 was mounted, the plate-like mixture sheet 150c and the copper foil 143 shown in FIG. 2D were aligned and overlapped.
[0062]
Next, as shown in FIG. 2F, using a hot press, the press temperature is 120 ° C. and the pressure is 9.8 × 10. ^Five Heated and pressurized at Pa for 5 minutes. Thereby, since the thermosetting resin in the mixture sheet 150c is melted and softened by heating, the plate-like body 105 in which the semiconductor element 101 is embedded can be formed, and the conductive resin composition 142 is also compressed to form the via conductor 111. It was. Thereafter, by heating this, the thermosetting resin in the plate-like body 105 and the via conductor 111 was cured. As a result, cavities 107 were formed in regions where the semiconductor elements were buried and in contact with the active elements 124 on the semiconductor elements and the distributed constant circuit elements 121, respectively.
[0063]
The heating temperature is set to a temperature equal to or higher than the temperature at which the thermosetting resin in the mixture sheet 150c and the conductive resin composition 142 is cured (for example, 150 ° C. to 260 ° C.). Through this process, the copper foil 143, the thermally conductive substrate 103, and the electrically insulating substrate 105 are mechanically firmly bonded. Further, the copper foil 143 is electrically connected by the via conductor 111. In addition, when hardening the thermosetting resin in the mixture sheet 150c and the conductive resin composition 142 by heating, 9.8 × 10 6 while heating. ^Five Pa (best) to 1.96 × 10 ⁷ By applying pressure at a pressure of Pa, the mechanical strength of the semiconductor built-in millimeter-wave band module can be further improved. The heating condition was maintained at 175 ° C. for 60 minutes. Thereby, the epoxy resin in the mixture sheet 150c and the epoxy resin in the conductive resin composition are cured. This is the same in the following embodiments.
[0064]
Thereafter, as shown in FIG. 2G, the external electrode 113 was formed by etching the copper foil 143. In this way, a semiconductor built-in millimeter-wave band module was formed. In the present embodiment, the conductive resin composition 142 is used as the conductive material filling the through-hole 141, but there is no particular limitation as long as it is a thermosetting conductive material.
[0065]
The semiconductor built-in millimeter-wave band module configured as described above can connect the semiconductor element and the heat sink in the shortest distance, and can provide electrical wiring and a thermal radiation path in different directions. For this reason, it was possible to dissipate heat more efficiently than when a semiconductor element was die-bonded on a conventional metal base plate, and electrical wiring could be freely arranged. In addition, since a cavity is formed around the surface of the semiconductor element on which the distributed constant circuit element is provided, it is not affected by the resin composition forming the electrically insulating substrate by incorporating the semiconductor element. The high frequency characteristics of the semiconductor element were able to obtain characteristics equivalent to those of the bare chip state. Further, since the semiconductor element is shielded from the outside air, a highly reliable semiconductor built-in millimeter-wave band module was obtained.
[0066]
(Second Embodiment)
FIG. 3 is a cross-sectional view schematically showing the configuration of a semiconductor built-in millimeter-wave band module according to the second embodiment of the present invention.
[0067]
The semiconductor built-in millimeter-wave band module in the present embodiment will be described below with reference to FIG. In FIG. 3, the semiconductor element 101 is mounted face-up on the high thermal conductive substrate 103, and a wiring pattern 119 formed on the high thermal conductive substrate 103 and a bypass capacitor 133 mounted on the wiring pattern 119 are connected via wires 131. It is electrically connected by wire bonding.
[0068]
A space 107 is formed in a region where the electrically insulating substrate 105 made of a mixture containing an inorganic filler and a thermosetting resin and the distributed constant circuit element 121 and the active element 124 formed on the semiconductor element 101 are in contact with each other. High heat conductive substrates 103 and 103a are provided on both sides of the electrically insulating substrate 105, and a wiring pattern 119 provided on the high heat conductive substrate 103 includes a via conductor 111 provided on the electrically insulating substrate 105 and a lower conductor. It is electrically connected to the external electrode 113 through a via conductor provided in the side high thermal conductive substrate 103a. A heat sink 115 for heat dissipation is mounted on the outer surface of the high heat conductive substrate 103 via a heat conductive adhesive 104.
[0069]
As the high thermal conductive substrate, in addition to the materials described in the first embodiment, a film-like resin material selected from PTFE, bismaleimide triazine, PPO, PPE, liquid crystal polymer, polybenzocyclobutene, polyimide and the like is selected. You can also.
[0070]
As a high thermal conductive substrate using a ceramic material, it is possible to select a substrate thickness of 100 μm or more from the handling of the substrate in the manufacturing process of the semiconductor built-in millimeter-wave band module. When used, the thickness can be 100 μm or less. Therefore, it is preferable to use a film-like resin material in order to reduce the size.
[0071]
In addition to the effects described in the first embodiment, the semiconductor built-in millimeter-wave band module configured as described above includes the same material on both sides of the electrically insulating substrate, so that the temperature change during use On the other hand, the influence of the warp of the whole module could be prevented. Furthermore, even when the high thermal conductive substrate is thinned, the influence of warpage can be prevented, and even when a film-like resin material is used, warpage can be prevented. In addition, the overall height or total thickness of the module could be reduced. As a result, the physical distance between the semiconductor element and the heat sink can be shortened, so that when the thermal via hole for heat dissipation is provided in the high thermal conductive substrate directly under the semiconductor element, the semiconductor element can be radiated more efficiently. . Here, the thermal via hole is a through hole filled with a heat-dissipating filler, and can also function as a via hole for normal electrical conduction depending on the application.
[0072]
(Third embodiment)
FIG. 4 is a cross-sectional view schematically showing the configuration of a semiconductor built-in millimeter-wave band module according to the third embodiment of the present invention.
[0073]
The semiconductor built-in millimeter-wave band module in the present embodiment will be described below with reference to FIG. In FIG. 4, the semiconductor element 101 is mounted face-up on a high thermal conductive substrate 103, and a wiring pattern 119 formed on the high thermal conductive substrate 103 and a bypass capacitor 133 mounted on the wiring pattern 119 are connected via wires 131. It is electrically connected by wire bonding.
[0074]
First and second high thermal conductive substrates 103 and 103a are provided on both sides of the electrically insulating substrate 105. A wiring pattern 119 provided on the first high thermal conductive substrate 103 includes a via conductor 111 and a first conductive layer. 2 is electrically connected to the external electrode 113 through a via conductor provided in the lower high thermal conductive substrate 103a which is the second high thermal conductive substrate. A heat sink 115 for heat dissipation is mounted on the outer surface of the first high heat conductive substrate 103 via a heat conductive adhesive 104.
[0075]
A gap 107 is formed in a region in contact with the distributed constant circuit element 121 and the active element 124 formed on the semiconductor element 101, and a surface facing the gap-shaped semiconductor element 101 is formed in contact with the high thermal conductive substrate. The remaining side surface is formed in contact with the electrically insulating substrate 105 made of a mixture containing an inorganic filler and a thermosetting resin. That is, the gap 107 has a shape that penetrates the electrically insulating substrate 105.
[0076]
(Fourth embodiment)
FIG. 5 is a cross-sectional view schematically showing a configuration of a semiconductor built-in millimeter-wave band module according to the fourth embodiment of the present invention.
[0077]
The semiconductor built-in millimeter-wave band module in the present embodiment will be described below with reference to FIG. In FIG. 5, the semiconductor element 101 is mounted face-up on the high thermal conductive substrate 103, and the wiring pattern 119 formed on the high thermal conductive substrate 103 and the bypass capacitor 133 mounted on the wiring pattern 119 are connected via wires 131. It is electrically connected by wire bonding.
[0078]
In addition to the active element 124, a distributed constant circuit element 121 is formed in the semiconductor element 101. Further, a wiring pattern and a filter element 125 using the wiring pattern are formed on the low dielectric loss substrate 117.
[0079]
The low dielectric loss substrate 117 and the high thermal conductive substrate 103 are laminated with an electrically insulating substrate 105 made of a mixture containing an inorganic filler and a thermosetting resin interposed therebetween, and the low dielectric loss substrate 117 and the high thermal conductive substrate 103 are stacked. Each of the wirings provided in each is electrically connected through a via conductor 111 provided in the electrically insulating substrate 105.
[0080]
A gap 107 is formed in a region in contact with the distributed constant circuit element 121 and the active element 124 using the wiring pattern on the semiconductor element 101 and a region in contact with the filter element 125 provided on the low dielectric loss substrate 117. A heat sink 115 for heat dissipation is mounted on the outer surface of the high heat conductive substrate 103 via a heat conductive adhesive 104.
[0081]
Next, an example of a method for manufacturing the semiconductor built-in millimeter-wave band module of the present invention will be described with reference to FIGS. 6A to 6F. 6A to 6F are cross-sectional views showing an embodiment of a manufacturing process of a semiconductor built-in millimeter-wave band module.
[0082]
First, three layers of the plate-like body 150a were produced by the method described in the first embodiment (FIG. 6A). Among them, the first plate-like body 150b for one layer is formed with a first through hole 140 in a region in contact with an active element on a semiconductor element and a distributed constant circuit element using a wiring pattern.
[0083]
Next, a third through-hole 144 was formed in the periphery of the filter element provided on the low dielectric loss substrate in the second plate-like body 150d for another layer when laminated. Next, the first plate body and the second plate body are aligned and overlapped from both sides around the third plate body 150c where the remaining through-holes are not formed, and polyethylene is further formed on the outside. A resin film 145 made of terephthalate or the like was stacked and pressed to integrate them (FIG. 6B).
[0084]
Thereafter, as shown in FIG. 6C, the second through-hole 141 is formed at a desired position of the integrated plate-like body 150e, thereby forming the plate-like body in which the second through-hole 141 is formed. . The second through hole was formed using the same method as the first through hole.
[0085]
Thereafter, as shown in FIG. 6D, the plate-like body 150e in which the second through-hole 141 is filled with the conductive resin composition 142 is obtained by filling the second through-hole 141 with the conductive resin composition 142. Formed.
[0086]
In parallel with the steps of FIGS. 6A to 6D, as shown in FIG. 6E, a wiring pattern 119 is formed on a high thermal conductive substrate 103 made of AlN or the like, and a semiconductor element 101 made of GaAs, InP or the like is formed thereon. After bonding, wire bonding was performed using the wire 131. The semiconductor element 101 and the bypass capacitor 133 were also electrically connected via wire 131 by wire bonding. Further, a distributed constant circuit element 121 and an active element 124 are die-bonded on the semiconductor element 101.
[0087]
Thereafter, the high heat dissipation substrate 103 on which the semiconductor element 101 was mounted, the plate-like body of FIG. 6D, and the low dielectric loss substrate 117 on which the filter element 125, the wiring 113 and the via conductor were formed were aligned and overlapped.
[0088]
The low-loss substrate 117 is formed of the above-described ceramic material or heat-resistant resin, and a preferable thickness is in the range of 0.1 mm to 1 mm.
[0089]
Thereafter, as shown in FIG. 6F, the layers are aligned and overlapped using a hot press at a press temperature of 120 ° C. and a pressure of 9.8 × 10. ^Five Heated and pressurized at Pa for 5 minutes. Thereby, a plate-like body in which the semiconductor element 101 was embedded was formed. Then, the thermosetting resin in a plate-shaped body and a conductive resin composition was hardened by heating this. As a result, the gap 107 is formed in a region where the semiconductor element 101 is buried and in which the active element 124 on the semiconductor element 101 and the distributed constant circuit element 121 are in contact with each other, and in which the filter element 125 is formed on the low dielectric loss substrate 117. A plate-like body 105 was formed. The heating is performed at a temperature equal to or higher than the temperature at which the thermosetting epoxy resin in the plate-like bodies 150a to 150e and the conductive resin composition 142 is cured (for example, 150 ° C. to 260 ° C.). Thus, the conductive resin composition becomes the via conductor 111. Through this process, the low dielectric loss substrate, the thermally conductive substrate 103, and the electrically insulating substrate 105 are mechanically firmly bonded.
[0090]
Heat generated from the active element on the surface of the semiconductor element of the semiconductor built-in millimeter-wave band module configured as described above is dissipated from the semiconductor element via the die-bonding bonding material and the high thermal conductive substrate. By joining the semiconductor element to a high thermal conductivity substrate having a thermal conductivity higher than that of the electrically insulating substrate, the heat radiation path can be expanded in the plane direction, and the substantial thermal resistance can be reduced. In this case, the heat path is shortened as compared with the configuration in which the high heat conductive substrate is mounted on the mother substrate and the mother substrate and the heat sink are bonded by bonding the heat sink to the high heat conductive substrate in which the back surface of the semiconductor element is die-bonded. As a result, the thermal resistance is reduced, so that heat can be dissipated with high efficiency.
[0091]
Further, the heat sink can be integrated with a housing in which the semiconductor built-in millimeter-wave band module is mounted, thereby reducing component costs and assembly costs.
[0092]
In addition, electrical wiring can be freely arranged, and the high frequency characteristics of the semiconductor element can be obtained with characteristics equivalent to those in the bare chip state. In addition, even if the filter element is built in, a gap is formed in a region in contact with the filter element, so that even if the semiconductor element and the filter element are built in, the resin composition that forms the electrically insulating substrate is not affected. . For this reason, a low-loss filter element can be incorporated, and the semiconductor element can be connected in the shortest time, so that loss due to the connection can be reduced.
[0093]
(Fifth embodiment)
FIG. 7 is a cross-sectional view schematically showing the configuration of a semiconductor built-in millimeter-wave band module according to the fifth embodiment of the present invention.
[0094]
The semiconductor built-in millimeter-wave band module in the present embodiment will be described below with reference to FIG. In FIG. 7, the semiconductor element 101 is mounted face-up on the high thermal conductive substrate 103, and a wiring pattern 119 formed on the high thermal conductive substrate 103 and a bypass capacitor 133 mounted on the wiring pattern 119 are connected via wires 131. It is electrically connected by wire bonding.
[0095]
In addition to the active element 124, a distributed constant circuit element 121 is formed in the semiconductor element 101. Further, a wiring pattern and a filter element 125 using the wiring pattern are formed on the low dielectric loss substrate 117. Outside the low dielectric loss substrate 117, an external electrode 113 connected to the conductor via is formed.
[0096]
The low dielectric loss substrate 117 and the high thermal conductive substrate 103 are laminated with an electrically insulating substrate 105 made of a mixture containing an inorganic filler and a thermosetting resin interposed therebetween, and the low dielectric loss substrate 117 and the high thermal conductive substrate 103 are stacked. Each of the wirings provided in each is electrically connected through a via conductor 111 provided in the electrically insulating substrate 105. A heat sink 115 for heat dissipation is mounted on the outer surface of the high heat conductive substrate 103 via a heat conductive adhesive 104.
[0097]
A gap 107 is formed in a region in contact with the distributed constant circuit element 121 and the active element 124 using the wiring pattern on the semiconductor element 101 and a region in contact with the filter element 125 provided on the low dielectric loss substrate 117. A filter element 125 provided on a low dielectric loss substrate 117 which is a layer different from the distributed constant circuit element 121 and the active element 124 formed on the semiconductor element 101 is provided in one gap, and the distributed constant circuit element 121 is provided. The gap 107 in which the active element 124 and the filter element 125 are provided is provided in an electrically insulating substrate in which a single through hole is formed. That is, unlike the structure shown in FIG. 5, the gap around the distributed constant circuit element and the gap around the filter element are shared.
[0098]
In the semiconductor built-in millimeter-wave band module formed as described above, the cavity shown in FIG. 6D described in the manufacturing method of the fourth embodiment in the process of manufacturing the semiconductor built-in millimeter-wave band module in the present embodiment. When the plate-like body in which the first through-hole and the second through-hole forming the conductive resin composition are filled is formed, the conductive resin is formed after the second through-hole is formed in one mixture 150. A semiconductor built-in millimeter-wave band module in which a plate-like body can be produced by filling a composition and then forming a first through hole for forming a cavity, and incorporating a semiconductor element and a filter element more easily Can be manufactured.
[0099]
(Sixth embodiment)
FIG. 8 is a cross-sectional view schematically showing the configuration of a semiconductor built-in millimeter-wave band module according to the sixth embodiment of the present invention.
[0100]
The semiconductor built-in millimeter-wave band module according to the present embodiment will be described below with reference to FIG. In FIG. 8, the semiconductor element 101 is mounted face-up on the high thermal conductive substrate 103, and the wiring pattern 119 formed on the high thermal conductive substrate 103 and the bypass capacitor 133 mounted on the wiring pattern 119 are connected via wires 131. It is electrically connected by wire bonding.
[0101]
In addition to the active element 124, the semiconductor element 101 includes a matching circuit using a wiring or a stub for connecting the active elements, a coupled line, a filter, a bias stub, a capacitor, an inductor, and the like. Is formed. Further, a wiring pattern and a filter element 125 using the wiring pattern are formed on the low dielectric loss substrate 117. Outside the low dielectric loss substrate 117, an external electrode 113 connected to the conductor via is formed. The low dielectric loss substrate 117 and the high thermal conductive substrate 103 are stacked with an electrically insulating substrate 105 made of a mixture containing an inorganic filler and a thermosetting resin interposed therebetween, and the low dielectric loss substrate 117 and the high thermal conductive substrate 103 are stacked. The wirings provided in 103 are electrically connected via via conductors 111 provided in the electrically insulating substrate 105. A heat sink 115 for heat dissipation is mounted on the outer surface of the high heat conductive substrate 103 via a heat conductive adhesive 104.
[0102]
Air gaps 107 are formed around the distributed constant circuit element 121 and the active element 124 using the wiring pattern on the semiconductor element 101 and around the filter element 125 provided on the low dielectric loss substrate 117, respectively. A shield conductor 126 is formed on the surface of the air gap 107 facing the surface in contact with the distributed constant circuit element 121, the active element 124, and the filter element 125.
[0103]
Here, a metal can be used for the shield conductor 126, and a metal foil is particularly preferable. In the present embodiment, a copper foil is used as the shield conductor.
[0104]
Note that the use of the above-described shield conductor is not limited to the present embodiment, and the shield conductor can also be used in other embodiments such as the above-described embodiments and the later-described embodiments.
[0105]
In the semiconductor built-in millimeter-wave band module formed as described above, in addition to the effects described in the fourth embodiment, the shield conductor can prevent leakage of signals between the semiconductor element and the filter element. Thus, it is possible to reduce the deformation of the void shape due to the softening of the resin during the void formation when manufacturing the semiconductor built-in millimeter-wave band module. Further, the characteristics of the filter element can be improved by electrically connecting the shield conductor to the ground terminal. For example, a filter characteristic having a steep attenuation characteristic can be obtained.
[0106]
(Seventh embodiment)
FIG. 9 is a cross-sectional view schematically showing the configuration of a semiconductor built-in millimeter-wave band module according to the seventh embodiment of the present invention.
[0107]
The semiconductor built-in millimeter-wave band module in the present embodiment will be described below with reference to FIG. In FIG. 9, the semiconductor element 101 is mounted face-up on the high thermal conductive substrate 103, and the wiring pattern 119 formed on the high thermal conductive substrate 103 and the bypass capacitor 133 mounted on the wiring pattern 119 are connected via wires 131. It is electrically connected by wire bonding.
[0108]
In addition to the active element 124, a distributed constant circuit element 121 is formed in the semiconductor element 101. Further, a wiring pattern and a filter element 125 using the wiring pattern are formed on the low dielectric loss substrate 117. The low dielectric loss substrate 117 and the high thermal conductive substrate 103 are stacked with an electrically insulating substrate 105 made of a mixture containing an inorganic filler and a thermosetting resin interposed therebetween, and the wiring 113 of the low dielectric loss substrate 117 and the high thermal conductivity substrate 103 are heated. The wiring 119 of the conductive substrate 103 is electrically connected via a via conductor 111 provided on the electrically insulating substrate 105 and a via conductor provided on the low dielectric loss substrate 117. A heat sink 115 for heat dissipation is mounted on the outer surface of the high heat conductive substrate 103 via a heat conductive adhesive 104.
[0109]
A gap 107 is formed around the distributed constant circuit element 121 and the active element 124 using the wiring pattern on the semiconductor element 101 and around the filter element 125 provided on the low dielectric loss substrate. A common shield conductor 126 is formed on the surface of the air gap 107 facing the surface in contact with the distributed constant circuit element 121, the active element 124, and the filter element 125, and the air gap 107 formed in a different layer has the same shield conductor 126. It touches the front and back. In this way, the shield conductor is shared in each gap.
[0110]
The semiconductor built-in millimeter-wave band module configured as described above can reduce the number of layers of the electrical insulator substrate compared to the sixth embodiment, and can be easily manufactured.
[0111]
(Eighth embodiment)
FIG. 10 is a cross-sectional view schematically showing a configuration of a semiconductor built-in millimeter-wave band module according to the eighth embodiment of the present invention.
[0112]
Hereinafter, a semiconductor built-in millimeter-wave band module according to the present embodiment will be described with reference to FIG. In FIG. 10, the semiconductor element 101 is mounted face-up on the high thermal conductive substrate 103, and a wiring pattern 119 formed on the high thermal conductive substrate 103 and a bypass capacitor 133 mounted on the wiring pattern 119 are connected via wires 131. Are electrically connected by wire bonding.
[0113]
In addition to the active element 124, a distributed constant circuit element 121 is formed in the semiconductor element 101. Further, a wiring pattern and a filter element 125 using the wiring pattern are formed on the low dielectric loss substrate 117, and are electrically connected to the wiring pattern on the low dielectric loss substrate 117, and circuit components 123a, 123b is arranged.
[0114]
The low dielectric loss substrate 117 and the high thermal conductive substrate 103 are stacked with an electrically insulating substrate 105 made of a mixture containing an inorganic filler and a thermosetting resin interposed therebetween, and the wiring 113 of the low dielectric loss substrate 117 and the high thermal conductivity substrate 103 are heated. The wiring 119 of the conductive substrate 103 is electrically connected via a via conductor 111 provided on the electrically insulating substrate 105 and a via conductor provided on the low dielectric loss substrate 117. A heat sink 115 for heat dissipation is mounted on the outer surface of the high heat conductive substrate 103 via a heat conductive adhesive 104.
[0115]
A gap 107 is formed in a region in contact with the distributed constant circuit element 121 and the active element 124 using the wiring pattern on the semiconductor element 101 and a region in contact with the filter element 125 provided on the low dielectric loss substrate 117.
[0116]
On the other hand, the circuit components 123 a and 123 b mounted on the low dielectric loss substrate 117 are embedded in contact with the electrically insulating substrate 105.
[0117]
The circuit components include, for example, an active component 123a and a passive component 123b. As the active component 123a, for example, a semiconductor element such as a transistor, IC, or LSI is used. The semiconductor element may be a semiconductor bare chip. As the passive component 123b, a chip-shaped resistor, a chip-shaped capacitor, a chip-shaped inductor, or the like is used. The circuit component may not include the passive component 123b.
[0118]
A known flip chip bonding or the like can be used for connection between the wiring pattern and the active component 123a. The via conductor 111 is made of, for example, a thermosetting conductive material. As the thermosetting conductive substance, for example, a conductive resin composition in which metal particles and a thermosetting resin are mixed can be used. As the metal particles, gold, silver, copper, nickel or the like can be used. Gold, silver, copper, or nickel is preferable because of its high conductivity, and copper is particularly preferable because of its high conductivity and low migration. As the thermosetting resin, for example, an epoxy resin, a phenol resin, or a cyanate resin can be used. Epoxy resins are particularly preferred because of their high heat resistance.
[0119]
A sealing resin may be injected between the circuit component mounted on the low dielectric loss substrate 117 and the low dielectric loss substrate 117. In the following embodiments, the sealing resin may be injected between the circuit component and the copper foil or between the circuit component and the wiring pattern. As the sealing resin, an underfill resin used for normal flip chip bonding can be used.
[0120]
Since the semiconductor built-in millimeter-wave band module configured as described above further incorporates another circuit component, the connection distance between the semiconductor element and the circuit component can be shortened, thereby reducing the noise of the electric signal. A semiconductor built-in millimeter-wave band module with excellent high frequency characteristics can be obtained. Furthermore, since circuit components whose characteristics are guaranteed in advance are built in, a module with a high manufacturing yield and high reliability can be realized.
[0121]
In the present embodiment, an example in which another circuit component is incorporated in the electrically insulating substrate is shown, but it can be used in other embodiments.
[0122]
(Ninth embodiment)
In the present embodiment, an embodiment of a semiconductor built-in millimeter-wave band module having a multilayer structure of the present invention will be described.
[0123]
FIG. 11 is a cross-sectional view of the semiconductor built-in millimeter-wave band module according to the ninth embodiment.
[0124]
The semiconductor built-in millimeter-wave band module according to the present embodiment includes a high thermal conductive substrate 103, a semiconductor element 101 face-up mounted on the high thermal conductive substrate 103, and a plurality of low loss substrates (first low loss substrate 117a and A second low loss substrate 117b). Circuit components 123 are mounted on the low-loss substrate 117a, and circuit components 123a and 123b are mounted on the low-loss substrate 117b. A first electrically insulating substrate 105a and a second electrically insulating substrate 105b are stacked between the high thermal conductive substrate 103 and the multiple layers of low loss substrates 117a and 117b. A distributed constant circuit element 121 is mounted on the semiconductor element 101 on the high thermal conductive substrate 103 in the first electrically insulating substrate 105a, and an active element 124 is mounted on the high thermal conductive substrate 103. A gap 107 is formed. Similarly, a filter element 125 is formed on the low-loss substrate 117a, and an air gap 107 is formed around the filter element 125. Circuit components are formed on the low-loss substrate 117b. 123a And an air gap 107 is formed on the outer periphery.
[0125]
The electrically insulating substrates 105a and 105b are made of a mixture containing an inorganic filler and a thermosetting resin. For the inorganic filler, for example, Al ₂ O _Three , BeO, BN, AlN or SiO ₂ Etc. can be used. The inorganic filler is preferably 70% by weight to 95% by weight with respect to the mixture. The average particle size of the inorganic filler is preferably 0.1 μm to 100 μm. For the thermosetting resin, for example, epoxy resin, phenol resin or cyanate resin having high heat resistance is preferable. Epoxy resins are particularly preferred because of their particularly high heat resistance. The mixture may further contain a dispersant, a colorant, a coupling agent, or a release agent.
[0126]
The circuit component 123 includes, for example, an active component 123a and a passive component 123b. As the active component 123a, for example, a semiconductor element such as a transistor, IC, or LSI is used. The semiconductor element may be a semiconductor bare chip. As the passive component 123b, a chip-shaped resistor, a chip-shaped capacitor, a chip-shaped inductor, or the like is used. The circuit component 123 may not include the passive component 123b.
[0127]
For example, flip chip bonding is used for mounting the active component 123a on the low-loss substrate 117. Although the semiconductor built-in millimeter-wave band module shown in FIG. 11 has a three-layer structure, it can have a multilayer structure according to the design.
[0128]
In the present embodiment, it is sufficient that the circuit component is embedded in at least the second electrically insulating substrate, and the circuit component may be embedded in the first electrically insulating substrate.
[0129]
The semiconductor built-in millimeter-wave band module configured as described above efficiently dissipates the semiconductor element, obtains characteristics equivalent to those of the bare chip state, can be connected to a low-loss filter with short wiring, and has high frequency characteristics. In addition to excellent manufacturing yield and reliability, the wiring length between circuit components mounted on multiple low dielectric loss substrates and semiconductor elements or filter elements can be reduced to multiple layers of low dielectric loss substrates. Compared to the two-dimensional arrangement without stacking, the connection can be made extremely short, so that signal loss due to wiring can be reduced, and the mounting area of modules having the same function can be reduced and the size can be reduced. Circuit components can be mounted with high density.
[0130]
(Tenth embodiment)
In the present embodiment, an embodiment of a semiconductor built-in millimeter-wave band module having a multilayer structure of the present invention will be described.
[0131]
FIG. 12 is a cross-sectional view of the millimeter waveband module with a built-in semiconductor according to the tenth embodiment, and FIG. 13 is a schematic diagram showing its circuit configuration.
[0132]
The semiconductor element 101 is mounted face up on the high thermal conductive substrate 103, and is electrically connected to the wiring pattern 119 formed on the high thermal conductive substrate 103 and the bypass capacitor 133 mounted on the wiring pattern 119 by wire bonding via the wire 131. Connected.
[0133]
In addition to the active element 124, a distributed constant circuit element 121 is formed in the semiconductor element 101.
[0134]
Further, a wiring pattern and a filter element 125 using the wiring pattern are formed on the low dielectric loss substrate 117. The low dielectric loss substrate 117 and the high thermal conductive substrate 103 are stacked with an electrically insulating substrate 105 made of a mixture containing an inorganic filler and a thermosetting resin interposed therebetween, and the low dielectric loss substrate 117 and the high thermal conductive substrate 103 are stacked. The wirings provided in 103 are electrically connected via via conductors 111 provided in the electrically insulating substrate 105.
[0135]
A gap 107 is formed in a region in contact with the distributed constant circuit element 121 and the active element 124 using the wiring pattern on the semiconductor element 101 and a region in contact with the filter element 125 provided on the low dielectric loss substrate. A heat sink 115 for heat dissipation is mounted on the outside of the high heat conductive substrate 103 via a heat conductive adhesive 104.
[0136]
The high-frequency signal output terminal 127 and the external signal input terminal 128 are part of the wiring pattern, and are provided on the surface of the low-loss substrate 117. The high-frequency signal output terminal 127 and the external signal input terminal 128 may be provided on the high thermal conductive substrate 103.
[0137]
The external signal input terminal 128 is electrically connected to the input terminal 125a of the filter element 125 via a wiring turn or via conductor, and the output terminal 125b of the filter element 125 and the input terminal 101a of the semiconductor element 101 are electrically connected. It is connected to the. The output terminal 101b of the semiconductor element 101 is electrically connected to the high frequency signal output terminal 127. These electrical connections are shown in FIG. As shown in FIG. 13, each device is electrically connected within the semiconductor built-in millimeter-wave band module, and is designed to operate as one module.
[0138]
In the semiconductor built-in millimeter-wave band module configured as described above, when the semiconductor element is a power amplifier for high output, a transmission module in which the transmission functions are combined into one by one semiconductor built-in millimeter-wave band module is obtained. The number of parts can be reduced when composing a communication device for millimeter waveband signals.
[0139]
When the semiconductor element is a low noise amplifier, a receiving module can be obtained in the same manner. Furthermore, in a semiconductor built-in millimeter-wave band module using a plurality of semiconductor elements, a millimeter-wave band front-end module integrated with a transmission / reception function can be obtained.
[0140]
For example, as shown in a schematic diagram of an example of another circuit configuration of the semiconductor built-in millimeter-wave band module, the external connection ground terminal 160 includes the filter element ground terminal 160a of the filter element 125, a wiring pattern, and a via conductor. And is further electrically connected to the filter element ground terminal 160a and the semiconductor element ground terminal 160b of the semiconductor element 101 via a via conductor 111b and a wiring pattern. For example, a microstrip bandpass filter using a coupled line can be used as the filter element. At that time, the wiring constituting the filter is formed on the low-loss substrate, and the electrode on the back surface of the low-loss substrate facing it becomes the ground layer for the filter element, and a part thereof becomes the ground terminal for the filter element. The ground terminal for the filter element is connected to the ground terminal for the semiconductor element through a through hole provided in the low-loss substrate, a via conductor provided in the electrically insulating substrate, and a wiring pattern provided in the high thermal conductive substrate.
[0141]
In this way, the filter element ground terminal 160a and the semiconductor element ground terminal 160b are connected in the shortest using the plurality of via conductors 111b provided in the electrically insulating substrate 105, whereby the filter element 125 and the semiconductor element 101 are grounded. Since the terminal functions stably as a ground terminal even in a high frequency band, stable operation can be realized.
[0142]
In each of the above embodiments, each substrate is not limited to a single layer substrate, and may be a multilayer wiring substrate.
[0143]
(Eleventh embodiment)
In the present embodiment, an embodiment of a mounted body of a semiconductor built-in millimeter-wave band module of the present invention will be described.
[0144]
FIG. 17 is a cross-sectional view schematically showing the configuration of the mounting body of the semiconductor built-in millimeter-wave band module according to the eleventh embodiment of the present invention.
[0145]
The mounting body of the semiconductor built-in millimeter-wave band module according to the present embodiment is such that the external electrode 113 of the semiconductor built-in millimeter-wave band module described in the first embodiment is a terminal for a mother board using lead tin solder or the like. 161. The ground electrode of the external electrode 113 is connected to the mother board ground terminal 162. As the mother substrate, a printed wiring board using a fluororesin can be used. The mother board ground terminal 162 is electrically connected to the side of the mother board 160 facing the surface on which the semiconductor built-in millimeter-wave band module 100 is mounted, using a through hole 165. Further, the mother board ground terminal 162 is electrically connected to the lower housing 171 using the conductive adhesive 104a. The lower housing 171 uses a metal such as aluminum die casting, and also serves as a heat sink. The lower casing 171 is fixed and integrated with the upper casing 172 and the side casing 173 with screws or the like, and is electrically at the same potential. Further, the upper housing 172 is electrically connected to the high thermal conductive substrate 103 having the ground layer formed on the back surface through the adhesive layer 104. For the adhesive layer, the same material as that of the conductive adhesive 104a can be used. For example, the conductive adhesives 104 and 104a have a conductivity of 1 × 10 ^-Four The product name “Dodent” manufactured by Nihon Solder Co., Ltd. can be used. In FIG. 17, the same reference numerals as those described above are common parts, and thus description thereof is omitted.
[0146]
According to the mounting body of the semiconductor built-in millimeter-wave band module, the heat sink and the housing can be integrated to reduce the number of components, and at the same time, the ground electrode and the mother board of the semiconductor built-in millimeter-wave band module can be reduced. The ground electrode can be shared through the casing, and the ground potential can be shared stably. Thereby, the built-in semiconductor element can be operated stably.
[0147]
Next, an example of the manufacturing method of the mounting body of the semiconductor built-in millimeter-wave band module of the present invention will be described. The external electrode 113 of the semiconductor built-in millimeter-wave band module is printed on the mother substrate using reflow after the cream solder is printed on the terminal 161 for the mother substrate, and then is electrically conductive using a dispenser at a predetermined position of the lower housing. A mother substrate on which a semiconductor built-in millimeter-wave band module is mounted is mounted thereon. Thereafter, an adhesive layer is applied and formed at a predetermined position of the upper casing using a dispenser, and the lower casing and the upper casing are screwed through the side casing. At this time, the upper casing is simultaneously bonded to the high thermal conductive substrate via the adhesive layer. At this time, as a thermoplastic sheet having a compressive property with a film-like adhesive layer, for example, a thermoplastic sheet having a compressive property in a film-like shape, a thermoplastic elastic polymer that exhibits rubber-like elasticity near normal temperature is used. be able to. In order to enhance the thermal conductivity, electrically conductive and thermally conductive fillers are dispersed in the sheet. As the filler, silver, carbon black, graphite or the like can be used. When silver is used as the filler, the specific gravity of the thermoplastic elastic polymer is about 3 to 4, and the volume resistivity is about 10 ^-3 Ω · cm or less. In this case, in a state before fixing the upper housing and the lower housing, the thickness of the entire semiconductor built-in millimeter-wave band module mounted on the mother substrate including the mother substrate, the conductive adhesive layer, and the thermoplastic sheet When the total thickness of the adhesive layers is made thicker than that of the side housing, and the upper and lower housings are fixed via the side housing, the adhesive layer is compressed. When the compressible sheet is used, the filler in the film of the adhesive layer is compressed and the filler density increases, so the conductivity increases compared to the state before compression, and at the same time heat conduction Also improves.
[0148]
Next, a circuit configuration in which a semiconductor built-in millimeter-wave band module containing a filter element formed using a wiring pattern on a low-loss board is electrically connected to a mounting body mounted on the mother board and the housing Will be described with reference to FIG.
[0149]
Each of the high-frequency signal output terminal 127 and the external signal input terminal 128 is a part of the wiring pattern, and is provided on the low-loss substrate 117. The external signal input terminal 128 is electrically connected to the input terminal 125a of the filter element 125 via a wiring pattern or via conductor, and the output terminal 125b of the filter element 125 and the input terminal 101a of the semiconductor element 101 are electrically insulated. The wiring board is electrically connected to via conductors provided on the conductive substrate. The output terminal 101b of the semiconductor element 101 is electrically connected to the high frequency signal output terminal 127.
[0150]
On the other hand, the external connection ground terminal 160 is electrically connected to the filter element ground terminal 160 a of the filter element 125 via the wiring pattern and the via conductor, and further, the filter element ground terminal 160 a and the semiconductor element of the semiconductor element 101. The grounding terminal 160b is electrically connected to the via conductor 111b via a wiring pattern or the like. For example, a microstrip bandpass filter using a ring resonator in which a ground layer is provided on the back surface of a low-loss substrate and a wiring pattern on the ring is formed on the other surface can be used as the filter element. At that time, the wiring constituting the filter is formed on the low-loss substrate, and the electrode on the back surface of the low-loss substrate facing it becomes the ground layer for the filter element, and a part thereof becomes the ground terminal for the filter element. The ground terminal for the filter element is electrically connected to a grounding wiring pattern provided on the high thermal conductive substrate via a metal casing made of, for example, aluminum die casting, and further connected to the ground terminal for the semiconductor element.
[0151]
Thus, by connecting the filter element ground terminal 160a and the semiconductor element ground terminal 160b via the housing, the ground potential can be stabilized and the module can be operated stably.
[0152]
【The invention's effect】
As described above, in the semiconductor built-in millimeter-wave band module according to the present invention, the semiconductor element and the heat sink can be connected in the shortest distance, and the electrical wiring and the thermal radiation path can be provided in different directions. It is possible to dissipate heat, and electrical wiring can be freely arranged. In addition, since a cavity is formed around the surface of the semiconductor element on which the distributed constant circuit element is provided, it is not affected by the resin composition forming the electrically insulating substrate by incorporating the semiconductor element. In addition, the high frequency characteristics of the semiconductor element can obtain characteristics equivalent to those of the bare chip state.
[0153]
In addition, since the millimeter waveband module with built-in semiconductor of the present invention can incorporate a filter element and a circuit component, the connection distance between the semiconductor element and the circuit component can be shortened, so that noise of an electric signal can be reduced. An excellent semiconductor built-in millimeter-wave band module can be obtained. Furthermore, since circuit components whose characteristics are guaranteed in advance are built in, a module with a high manufacturing yield and high reliability can be realized.
[0154]
Furthermore, in the semiconductor built-in millimeter-wave band module according to the present invention, the multi-layer structure enables the semiconductor element and the circuit component to be connected at a short distance, thereby reducing signal loss due to wiring and providing the same function. The circuit module can be mounted at high density by reducing the mounting area of the module and reducing the size.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view of a semiconductor built-in millimeter-wave band module according to a first embodiment of the present invention.
FIGS. 2A to 2G are process cross-sectional views illustrating an outline of a method for manufacturing a semiconductor built-in millimeter-wave band module according to the first embodiment of the present invention. FIGS.
FIG. 3 is a schematic cross-sectional view of a semiconductor built-in millimeter-wave band module according to a second embodiment of the present invention.
FIG. 4 is a schematic cross-sectional view of a semiconductor built-in millimeter-wave band module according to a third embodiment of the present invention.
FIG. 5 is a schematic sectional view of a semiconductor built-in millimeter-wave band module according to a fourth embodiment of the present invention.
FIG. 6 is a process cross-sectional view illustrating an outline of a method for manufacturing a semiconductor built-in millimeter-wave band module according to a fourth embodiment of the present invention.
FIG. 7 is a schematic cross-sectional view of a semiconductor built-in millimeter-wave band module according to a fifth embodiment of the present invention.
FIG. 8 is a schematic cross-sectional view of a semiconductor built-in millimeter-wave band module according to a sixth embodiment of the present invention.
FIG. 9 is a schematic cross-sectional view of a semiconductor built-in millimeter-wave band module according to a seventh embodiment of the present invention.
FIG. 10 is a schematic cross-sectional view of a semiconductor built-in millimeter-wave band module according to an eighth embodiment of the present invention.
FIG. 11 is a schematic cross-sectional view of a semiconductor built-in millimeter-wave band module according to a ninth embodiment of the invention.
FIG. 12 is a schematic cross-sectional view of a semiconductor built-in millimeter-wave band module according to a tenth embodiment of the present invention.
FIG. 13 is a schematic diagram of a circuit of a semiconductor built-in millimeter-wave band module according to a tenth embodiment of the present invention.
FIG. 14 is a distributed constant line diagram for synthesizing the output power of the amplifier of the semiconductor built-in millimeter-wave band module according to the first embodiment of the present invention.
FIG. 15 is an essential part plan view of the semiconductor built-in millimeter-wave band module according to the first embodiment of the present invention.
FIG. 16 is a schematic diagram of a circuit of a semiconductor built-in millimeter-wave band module according to a tenth embodiment of the present invention.
FIG. 17 is a schematic cross-sectional view of a semiconductor built-in millimeter-wave band module according to an eleventh embodiment of the present invention.
FIG. 18 is a schematic diagram of a circuit of a semiconductor built-in millimeter-wave band module according to an eleventh embodiment of the present invention.
[Explanation of symbols]
101 Semiconductor device
101a Semiconductor device input terminal
101b Output terminal of semiconductor element
103 High thermal conductive substrate
103a Second high thermal conductive substrate
104 Adhesive layer
105 Electrically insulating substrate
107 gap
111 Via conductor
113 External electrode
115 heat sink
117 Low loss substrate
119 Wiring pattern
121 Distributed constant circuit element
123 Circuit parts
123a Active parts
123b Passive components
124 active devices
125 filter element
125a Filter element input terminal
125b Output terminal of filter element
126 Shield conductor
127 High frequency signal output terminal
128 External signal input terminal
131 wire
133 Bypass capacitor
140 First through hole
141 second through hole
142 Conductive Resin Composition
143 Copper foil
144 Third through hole
145 Resin film
150,150a-150e Mixture sheet layer containing inorganic filler and thermosetting resin

Claims (23)

An electrically insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin;
A high thermal conductivity substrate made of a dielectric material having a higher thermal conductivity than the electrically insulating substrate, and laminated on one surface of the electrically insulating substrate;
A plurality of wiring patterns formed on the high thermal conductive substrate and the electrically insulating substrate;
A semiconductor element that is disposed inside the electrically insulating substrate, is face-up mounted on the high thermal conductivity substrate, and is electrically connected to the wiring pattern;
A distributed constant circuit element and an active element provided on the semiconductor element,
A semiconductor built-in millimeter-wave band module, wherein a gap is provided inside the electrically insulating substrate and outside the surface of the distributed constant circuit element and the active element. The semiconductor built-in millimeter-wave band module according to claim 1, wherein a second high thermal conductive substrate is further laminated on the other surface of the electrically insulating substrate. The semiconductor built-in millimeter-wave band module according to claim 2, wherein the air gap is formed in contact with the second high thermal conductive substrate. The semiconductor built-in millimeter-wave band module according to claim 1, wherein a shield electrode is further provided on a surface facing the distributed constant circuit element in the gap. The semiconductor built-in millimeter-wave band module according to claim 4, wherein the shield electrode is shared by a plurality of gaps. The semiconductor built-in millimeter-wave band module according to claim 1, further comprising a circuit component disposed inside the electrically insulating substrate and further electrically connected to the wiring pattern. The semiconductor built-in millimeter-wave band module according to claim 6, wherein the circuit component is shielded from outside air by the electrically insulating substrate. _2. The semiconductor built-in millimeter-wave according to claim 1, wherein the inorganic filler contained in the mixture constituting the electrically insulating substrate includes at least one inorganic filler selected from Al ₂ O ₃ , BeO, BN, SiC, AlN and SiO _2. Band module. _2. The semiconductor built-in millimeter-wave band module according to claim 1, wherein the high thermal conductive substrate is made of at least one ceramic selected from Al ₂ O ₃ , BeO, BN, AlN, and SiC. 2. The semiconductor built-in millimeter-wave band module according to claim 1, wherein the semiconductor element is composed of at least one semiconductor selected from a material including Si, GaAs, SiGe, InP, and SiC. The semiconductor built-in millimeter-wave band module according to claim 1, further comprising a low-loss substrate made of a material having a lower dielectric loss than the electrically insulating substrate on the other surface of the electrically insulating substrate. The semiconductor built-in millimeter-wave band module according to claim 11, wherein a plurality of wiring patterns are formed on the low-loss substrate. The semiconductor built-in millimeter-wave band module according to claim 11, wherein a filter element is provided on the low-loss substrate and inside the electrically insulating substrate, and a gap is provided outside the surface of the filter element. 14. The semiconductor built-in millimeter wave according to claim 13, wherein the filter element provided on the low dielectric loss substrate and the distributed constant circuit element and the active element provided on the semiconductor element are provided in the same gap. Band module. On the high thermal conductive substrate or the low loss substrate, a high frequency signal output terminal and an external signal input terminal are provided,
The external signal input terminal and the input terminal of the filter element are electrically connected, the output terminal of the filter element and the input terminal of the semiconductor element are electrically connected, and the output terminal of the semiconductor element The semiconductor built-in millimeter-wave band module according to claim 13, wherein the high-frequency signal output terminal and the high-frequency signal output terminal are electrically connected. The semiconductor built-in millimeter-wave band module according to claim 11, wherein the low-loss substrate includes at least one ceramic material selected from Al ₂ O ₃ , BeO, BN, AlN, and SiC. The semiconductor built-in millimeter-wave band module according to claim 11, wherein the low-loss substrate is a heat-resistant resin having a heat distortion temperature of 180 ° C. or higher. Heat-resistant resin is fluororesin, polyimide (PI) resin, meta- and para-containing aramid resin, polyester resin, polyamideimide resin, polyesterimide resin, polyetherketone (PEK) resin, polyetheretherketone (PEEK) At least one resin selected from a resin, a polysulfone (PS) resin, a bismaleimide triazine resin, a polyphenylene ether (PPE) resin, a polyphenylene sulfide (PPS) resin, a polybenzimidazole resin, a liquid crystal polymer, and polybenzocyclobutene Item 18. A semiconductor built-in millimeter-wave band module according to Item 17. The electrically insulating substrate is composed of first and second electrically insulating substrates, and is made of a dielectric material having a higher thermal conductivity than the first electrically insulating substrate,
A high thermal conductivity substrate laminated on one side of the first electrically insulating substrate;
First and second low-loss substrates made of a material having a lower dielectric loss than the first electrically insulating substrate;
A plurality of wiring patterns formed on the high thermal conductive substrate, the first and second electrically insulating substrates, and the first and second low loss substrates;
A semiconductor element that is disposed in the first electrically insulating substrate, is face-up mounted on the high thermal conductivity substrate, and is electrically connected to the wiring pattern;
A distributed constant circuit element and an active element provided on the semiconductor element;
A gap inside the first electrically insulating substrate and outside the surface of the distributed constant circuit element and the active element on the semiconductor element, and the second low loss disposed inside the second electrically insulating substrate. Circuit components electrically connected to the wiring pattern of the substrate, the first low-loss substrate is laminated on the other surface of the first electrically insulating substrate, and the second electrically insulating substrate is The semiconductor built-in millimeter-wave band module according to claim 1, wherein the module is stacked between the first low-loss substrate and the second low-loss substrate. The semiconductor built-in millimeter-wave band module according to claim 1, further comprising a heat sink having a heat dissipation function outside the high thermal conductive substrate. A semiconductor element operating in a millimeter-wave band, wherein the high thermal conductive substrate is disposed in a housing, the high thermal conductive substrate and the housing are bonded with a thermal conductive resin, and a back side is mounted on a surface facing the bonding surface; The semiconductor built-in millimeter-wave band module according to claim 1, further comprising a mother board to which a ground terminal of the semiconductor element is connected, wherein the ground terminal of the mother board is electrically connected to the housing. The semiconductor built-in millimeter-wave band module according to claim 21, wherein the thermally conductive resin has compressibility. The housing further includes a low-loss substrate, and a filter element on the low-loss substrate, and the semiconductor element is mounted on the high thermal conductive substrate,
A high-frequency signal output terminal, an external signal input terminal, and a ground terminal for external connection are provided on the high thermal conductive substrate or the low-loss substrate.
The external signal input terminal and the input terminal of the filter element are electrically connected, and the output terminal of the filter element and the input terminal of the semiconductor element are electrically connected via a first via conductor,
The output terminal of the semiconductor element and the high-frequency signal output terminal are electrically connected via a second via conductor,
The external connection ground terminal and the filter element ground terminal of the filter element are electrically connected,
The semiconductor built-in millimeter-wave band module according to claim 21, wherein a semiconductor element ground terminal, a filter element ground terminal, and an external connection ground terminal of the semiconductor element are electrically connected via the casing.

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