CN110719067A - Terahertz frequency multiplier with thermal matching structure - Google Patents
Terahertz frequency multiplier with thermal matching structure Download PDFInfo
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- CN110719067A CN110719067A CN201910837993.0A CN201910837993A CN110719067A CN 110719067 A CN110719067 A CN 110719067A CN 201910837993 A CN201910837993 A CN 201910837993A CN 110719067 A CN110719067 A CN 110719067A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B1/00—Details
- H03B1/02—Structural details of power oscillators, e.g. for heating
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
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Abstract
The invention provides a terahertz frequency multiplier with a thermal matching structure, which belongs to the field of terahertz devices and comprises a metal shell, a diamond substrate arranged in an inner cavity of the metal shell, an input waveguide structure, a filter circuit structure, a first matching circuit structure, a frequency doubling chip, a second matching circuit structure and an output waveguide structure, wherein the input waveguide structure, the filter circuit structure, the first matching circuit structure, the frequency doubling chip, the second matching circuit structure and the output waveguide structure are sequentially connected with the diamond substrate, a third thermal expansion adapting layer is arranged at a first class pressure point corresponding to the frequency doubling chip on the upper plate surface of the diamond substrate, and a fourth thermal expansion adapting layer is arranged at a second class pressure point corresponding to the inner cavity of the metal shell. According to the terahertz frequency multiplier with the thermal matching structure, the third thermal expansion adapting layer and the fourth thermal expansion adapting layer are made of materials with low thermal expansion coefficients, thermal expansion mismatch between the diamond substrate and the frequency doubling chip and thermal expansion mismatch between the diamond substrate and the metal shell are effectively improved, and the diamond substrate can be used in the terahertz frequency multiplier.
Description
Technical Field
The invention belongs to the technical field of terahertz devices, and particularly relates to a terahertz frequency multiplier with a thermal matching structure.
Background
The terahertz wave is an electromagnetic wave with the frequency range of 0.1THz-10THz, has very excellent characteristics, and can be widely applied to the fields of security inspection, medical treatment, aerospace, detection and the like. The terahertz frequency multiplier can perform frequency multiplication on low-frequency electromagnetic waves to form terahertz waves, and is a core device for obtaining the terahertz waves. Due to the fact that frequency doubling efficiency of low-frequency electromagnetic waves in the terahertz frequency multiplier is generally low, self-heating effect of the terahertz frequency multiplier is very obvious, junction temperature of a chip is increased, and failure is caused.
The diamond has the characteristics of ultrahigh thermal conductivity and low dielectric constant, and is an ideal material for the circuit substrate of the terahertz frequency multiplier, but the diamond, the frequency multiplier chip and the frequency multiplier cavity have large thermal expansion coefficient mismatch, so that the diamond substrate is difficult to apply to the terahertz frequency multiplier.
Disclosure of Invention
The invention aims to provide a terahertz frequency multiplier with a thermal matching structure, and aims to solve the technical problem that a diamond substrate is difficult to apply due to the fact that large thermal expansion coefficient mismatch exists between diamond and a frequency multiplication chip and between diamond and a frequency multiplier cavity in the prior art.
In order to achieve the purpose, the invention adopts the technical scheme that: provided is a terahertz frequency multiplier having a thermal matching structure, including: the diamond substrate comprises a metal shell, a diamond substrate arranged in an inner cavity of the metal shell, an input waveguide structure, a filter circuit structure, a first matching circuit structure, a frequency doubling chip, a second matching circuit structure and an output waveguide structure, wherein the input waveguide structure, the filter circuit structure, the first matching circuit structure, the frequency doubling chip, the second matching circuit structure and the output waveguide structure are sequentially connected with the diamond substrate, a third thermal expansion adaptation layer is arranged at a first class pressure point corresponding to the frequency doubling chip on the upper plate surface of the diamond substrate, and a fourth thermal expansion adaptation layer is arranged at a second class pressure point corresponding to the inner cavity of the metal shell on the lower plate.
In one embodiment, the third thermal expansion compliant layer and the fourth thermal expansion compliant layer are each a multi-layer composite tuning layer.
In one embodiment, the thickness of the third thermal expansion adaptation layer and the fourth thermal expansion adaptation layer are both 10nm-100 μm.
In one embodiment, the third thermal expansion adaptation layer comprises a first copper layer, a first molybdenum layer and a second copper layer which are stacked from top to bottom.
In one embodiment, the fourth thermal expansion adaptation layer comprises a third copper layer, a second molybdenum layer and a fourth copper layer which are stacked from top to bottom.
In one embodiment, a first thermal expansion adaptation layer is further disposed between the diamond substrate and the third thermal expansion adaptation layer.
In one embodiment, a second thermal expansion adaptation layer is further disposed between the diamond substrate and the fourth thermal expansion adaptation layer.
In one embodiment, the first thermal expansion adaptation layer and the second thermal expansion adaptation layer are both metal layers.
In one embodiment, the first thermal expansion compliant layer and the second thermal expansion compliant layer are one of a tin layer, a molybdenum layer, or a tungsten layer.
In one embodiment, the first thermal expansion adaptation layer and the second thermal expansion adaptation layer each have a thickness of 10nm-100 μm.
The terahertz frequency multiplier with the thermal matching structure has the beneficial effects that: compared with the prior art, the terahertz frequency multiplier with the thermal matching structure has the advantages that the third thermal expansion adapting layer is arranged at the first class pressure point of the diamond substrate, the fourth thermal expansion adapting layer is arranged at the second class pressure point of the diamond substrate, and the third thermal expansion adapting layer and the fourth thermal expansion adapting layer are made of materials with lower thermal expansion coefficients, so that thermal expansion mismatching between the diamond substrate and the frequency doubling chip and thermal expansion mismatching between the diamond substrate and the metal shell can be effectively improved, the diamond substrate can be used in the terahertz frequency multiplier with the thermal matching structure, and the purpose of improving the thermal performance of the frequency multiplier is achieved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a top view of an internal structure of a terahertz frequency multiplier with a thermal matching structure according to an embodiment of the present invention;
fig. 2 is a sectional view a-a of a terahertz frequency multiplier with a thermal matching structure according to an embodiment of the present invention.
Wherein, in the figures, the respective reference numerals:
1-a metal housing; 2-a diamond substrate; 3-an input waveguide structure; 4-a filter circuit structure; 5-a first matching circuit structure; 6-frequency doubling chip; 7-a second matching circuit structure; 8-an output waveguide structure; 9-a first thermal expansion adaptation layer; 10-a second thermal expansion adaptation layer; 11-a third thermal expansion adaptation layer; 1101-a first copper layer; 1102 — a first molybdenum layer; 1103 — a second copper layer; 12-a fourth thermal expansion adaptation layer; 1201-a third copper layer; 1202-a second molybdenum layer; 1203-a fourth copper layer; 13-waveguide-suspended strip line transition structure; 14-suspended strip line-waveguide transition structure; 15-bonding wire
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1 and fig. 2 together, a terahertz frequency multiplier with a thermal matching structure according to the present invention will now be described. The terahertz frequency multiplier with the thermal matching structure comprises a metal shell 1, a diamond substrate 2 arranged in an inner cavity of the metal shell 1, an input waveguide structure 3, a filter circuit structure 4, a first matching circuit structure 5, a frequency doubling chip 6, a second matching circuit structure 7 and an output waveguide structure 8 which are arranged on the diamond substrate 2 and connected in sequence, wherein a third thermal expansion adaptation layer 11 is arranged at a first pressure point position of the upper plate surface of the diamond substrate 2 corresponding to the frequency doubling chip 6, and a fourth thermal expansion adaptation layer 12 is arranged at a second pressure point position of the lower plate surface of the diamond substrate 2 corresponding to the inner cavity of the metal shell 1.
Compared with the prior art, the terahertz frequency multiplier with the heat matching structure provided by the invention has the advantages that the third thermal expansion adapting layer 11 is arranged at the first class pressure point of the diamond substrate 2, the fourth thermal expansion adapting layer 12 is arranged at the second class pressure point, and the third thermal expansion adapting layer 11 and the fourth thermal expansion adapting layer 12 are made of materials with lower thermal expansion coefficients, so that the thermal expansion mismatch between the diamond substrate 2 and the frequency doubling chip 6 and between the diamond substrate 2 and the metal shell 1 can be effectively improved, the diamond substrate 2 can be used in the terahertz frequency multiplier with the heat matching structure, and the purpose of improving the heat performance of the frequency multiplier is achieved.
Specifically, the diamond substrate 2 is a sheet-shaped rectangular substrate processed by single crystal or polycrystalline diamond, and basic circuit elements such as a capacitor, a resistor, an inductor, a transmission line, a transition structure, a pressure point and the like are processed on the substrate to form a circuit for powering up the frequency doubling chip 6.
Specifically, the frequency doubling chip 6 is a semiconductor nonlinear device chip, and may be a diode or a triode chip of common semiconductors such as GaAs, GaN, InP, Si, SiC, ZnO, Ga2O3, AlN, InN, and the like.
Specifically, the metal housing 1 is a part processed by using metals such as Cu, Al, Au, Ag, etc., and has a cavity structure inside.
Specifically, the auxiliary connection between the frequency doubling chip 6 and the diamond substrate 2 is realized by adopting solder or conductive adhesive; the auxiliary connection between the frequency doubling chip 6 and the metal shell 1 is realized by adopting solder or conductive adhesive.
As a specific embodiment of the terahertz frequency multiplier with a thermal matching structure provided by the present invention, the third thermal expansion adapting layer 11 is a multi-layer composite material adjusting layer. The multi-layer composite material adjusting layer utilizes a multi-layer structure formed by stacking the multi-layer composite material adjusting layer, and can achieve better comprehensive physical properties than a single-layer material through the combination of thermal expansion properties, electric conductivity and heat conductivity among different materials, thereby being beneficial to improving the overall performance of a device.
Referring to fig. 2, as an embodiment of the terahertz frequency multiplier with a thermal matching structure according to the present invention, the third thermal expansion adapting layer 11 includes a first copper layer 1101, a first molybdenum layer 1102 and a second copper layer 1103 that are stacked from top to bottom.
The third thermal expansion adapting layer 11 is actually a copper-molybdenum-copper (Cu/Mo/Cu) material, is a flat composite material with a sandwich structure, can adopt pure molybdenum as a core material, and is coated with pure copper or dispersion strengthened copper on two sides, and belongs to a metal-based planar layered composite material. The middle molybdenum layer is made of low expansion material, and the copper layers on two sides are made of high electric and heat conduction material layers. The thermal expansion coefficient of the material is adjustable, the thermal conductivity is high, and the high temperature resistance is excellent.
As a specific embodiment of the terahertz frequency multiplier with the thermal matching structure provided by the present invention, in order to ensure the reliability of thermal expansion adaptation and simultaneously occupy no more internal space, the thickness of the third thermal expansion adaptation layer 11 is 10nm to 100 μm.
As a specific embodiment of the terahertz frequency multiplier with a thermal matching structure provided by the present invention, the fourth thermal expansion adapting layer 12 is a multilayer composite material adjusting layer. The multi-layer composite material adjusting layer utilizes a multi-layer structure formed by stacking the multi-layer composite material adjusting layer, and can achieve better comprehensive physical properties than a single-layer material through the combination of thermal expansion properties, electric conductivity and heat conductivity among different materials, thereby being beneficial to improving the overall performance of a device.
Referring to fig. 2, as an embodiment of the terahertz frequency multiplier with a thermal matching structure according to the present invention, the fourth thermal expansion adapting layer 12 includes a third copper layer 1201, a second molybdenum layer 1202 and a fourth copper layer 1203 that are stacked from top to bottom. The fourth thermal expansion adapting layer 12 is actually a copper-molybdenum-copper (Cu/Mo/Cu) material, is a flat composite material with a sandwich structure, can adopt pure molybdenum as a core material, and is coated with pure copper or dispersion strengthened copper on two sides, and belongs to a metal-based planar layered composite material. The middle molybdenum layer is made of low expansion material, and the copper layers on two sides are made of high electric and heat conduction material layers. The thermal expansion coefficient of the material is adjustable, the thermal conductivity is high, and the high temperature resistance is excellent.
As a specific embodiment of the terahertz frequency multiplier with the thermal matching structure provided by the present invention, in order to ensure the reliability of thermal expansion adaptation and simultaneously occupy no more internal space, the thickness of the fourth thermal expansion adaptation layer 12 is 10nm to 100 μm.
Referring to fig. 2, as a specific embodiment of the terahertz frequency multiplier with a thermal matching structure provided by the present invention, in order to further improve the thermal expansion adaptability between the frequency doubling chip 6 and the diamond substrate 2, a first thermal expansion adapting layer 9 is further disposed between the diamond substrate 2 and the third thermal expansion adapting layer 11.
Referring to fig. 2, as a specific embodiment of the terahertz frequency multiplier with a thermal matching structure provided by the present invention, in order to further improve the thermal expansion adaptability between the metal housing 1 and the diamond substrate 2, a second thermal expansion adapting layer 10 is further disposed between the diamond substrate 2 and a fourth thermal expansion adapting layer 12.
As a specific embodiment of the terahertz frequency multiplier with a thermal matching structure provided by the present invention, the first thermal expansion adaptation layer 9 and the second thermal expansion adaptation layer 10 are both metal layers. The metal material has good toughness, conductivity and lower thermal expansion coefficient, and is more suitable for being used as an adaptation layer of a device.
As a specific embodiment of the terahertz frequency multiplier with a thermal matching structure provided by the present invention, the first thermal expansion adaptation layer 9 and the second thermal expansion adaptation layer 10 are one of a tin layer, a molybdenum layer, or a tungsten layer. The thermal expansion coefficient of the material can meet the use requirement, and the heat conducting property and the structural stability are also better.
As a specific embodiment of the terahertz frequency multiplier with the thermal matching structure provided by the present invention, in order to ensure the reliability of thermal expansion adaptation and simultaneously occupy no more internal space, the thicknesses of the first thermal expansion adaptation layer 9 and the second thermal expansion adaptation layer 10 are 10nm to 100 μm.
The preparation process comprises the following steps:
preparing a tin layer (a first thermal expansion adaptation layer 9) on a first class pressure point which is required to be connected with the frequency doubling chip 6 on the diamond substrate 2, firstly adopting solder to install a copper-molybdenum-copper material (a third thermal expansion adaptation layer 11) on the first class pressure point corresponding to the frequency doubling chip 6 in the assembling process, and then adopting solder to connect the copper-molybdenum-copper material (the third thermal expansion adaptation layer 11) of the frequency doubling chip 6 to the tin layer (the first thermal expansion adaptation layer 9) on the diamond substrate 2.
Preparing a tin layer (a second thermal expansion adaptation layer 10) on a pressure point of the diamond substrate 2 which needs to be connected with the metal shell 1, firstly adopting solder to install a copper-molybdenum-copper material (a fourth thermal expansion adaptation layer 12) on the metal shell 1 in the assembling process, and then adopting solder to connect the tin layer (the second thermal expansion adaptation layer 10) on the diamond substrate 2 to the copper-molybdenum-copper material (the fourth thermal expansion adaptation layer 12).
Referring to fig. 1, as an embodiment of the terahertz frequency multiplier with a thermal matching structure according to the present invention, a filter circuit structure 4 is connected to an input waveguide structure 3 through a waveguide-suspended strip line transition structure 13 extending into the input waveguide structure 3.
Referring to fig. 1, as an embodiment of the terahertz frequency multiplier with a thermal matching structure according to the present invention, the second matching circuit structure 7 is connected to the output waveguide structure 8 through a suspended strip line-waveguide transition structure 14 extending into the output waveguide structure 8.
Referring to fig. 1 and fig. 2, as an embodiment of the terahertz frequency multiplier with a thermal matching structure provided in the present invention, a bonding wire 15 connected to the metal housing 1 is disposed on the second thermal expansion adapting layer 10.
When the frequency doubling type microstrip line filter works, a low-frequency signal enters from the input waveguide structure 3, enters the suspended microstrip line through the waveguide-suspended strip line transition structure 13, enters the frequency doubling chip 6 through the filter circuit structure 4 and the first matching circuit structure 5 to form a higher harmonic, and the higher harmonic enters the output waveguide structure 8 through the second matching circuit structure 7 and the suspended strip line-waveguide transition structure 14 and is output by the output waveguide structure 8.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (10)
1. Terahertz frequency multiplier with hot matching structure, its characterized in that: the diamond-based frequency-doubling chip comprises a metal shell, a diamond substrate arranged in an inner cavity of the metal shell, an input waveguide structure, a filter circuit structure, a first matching circuit structure, a frequency-doubling chip, a second matching circuit structure and an output waveguide structure, wherein the input waveguide structure, the filter circuit structure, the first matching circuit structure, the frequency-doubling chip, the second matching circuit structure and the output waveguide structure are sequentially connected on the diamond substrate, a third thermal expansion adaptation layer is arranged at a first class pressure point corresponding to the frequency-doubling chip on the upper plate surface of the diamond substrate, and a fourth thermal expansion adaptation layer is arranged at a second class pressure point corresponding to the inner cavity of.
2. The terahertz frequency multiplier with a thermal matching structure of claim 1, wherein: the third thermal expansion adaptation layer and the fourth thermal expansion adaptation layer are both multilayer composite material adjusting layers.
3. The terahertz frequency multiplier with a thermal matching structure of claim 2, wherein: the thickness of the third thermal expansion adaptation layer and the thickness of the fourth thermal expansion adaptation layer are both 10nm-100 mu m.
4. The terahertz frequency multiplier with a thermal matching structure of claim 2, wherein: the third thermal expansion adapting layer comprises a first copper layer, a first molybdenum layer and a second copper layer which are distributed in a laminated mode from top to bottom.
5. The terahertz frequency multiplier with a thermal matching structure of claim 2, wherein: the fourth thermal expansion adapting layer comprises a third copper layer, a second molybdenum layer and a fourth copper layer which are distributed in a laminated mode from top to bottom.
6. The terahertz frequency multiplier with a thermal matching structure of claim 1, wherein: and a first thermal expansion adapting layer is also arranged between the diamond substrate and the third thermal expansion adapting layer.
7. The terahertz frequency multiplier with a thermal matching structure of claim 6, wherein: and a second thermal expansion adapting layer is also arranged between the diamond substrate and the fourth thermal expansion adapting layer.
8. The terahertz frequency multiplier with a thermal matching structure of claim 7, wherein: the first thermal expansion adaptation layer and the second thermal expansion adaptation layer are both metal layers.
9. The terahertz frequency multiplier with a thermal matching structure of claim 8, wherein: the first thermal expansion adapting layer and the second thermal expansion adapting layer are one of tin layers, molybdenum layers or tungsten layers.
10. The terahertz frequency multiplier with a thermal matching structure of claim 7, wherein: the thickness of the first thermal expansion adaptation layer and the thickness of the second thermal expansion adaptation layer are both 10nm-100 mu m.
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Cited By (3)
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| CN112993054A (en) * | 2021-02-05 | 2021-06-18 | 中国电子科技集团公司第十三研究所 | GaN terahertz diode, frequency multiplication monolithic, frequency multiplier and preparation method thereof |
| CN114665823A (en) * | 2022-02-28 | 2022-06-24 | 电子科技大学 | Return-wave terahertz frequency tripling circuit structure |
| CN115037250A (en) * | 2022-08-11 | 2022-09-09 | 壹新信通科技(成都)有限公司 | Terahertz multi-die frequency multiplier and electronic equipment |
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