CN205945651U - W wave band reaches too hertz frequency low side frequency multiplier - Google Patents
W wave band reaches too hertz frequency low side frequency multiplier Download PDFInfo
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- CN205945651U CN205945651U CN201620809461.8U CN201620809461U CN205945651U CN 205945651 U CN205945651 U CN 205945651U CN 201620809461 U CN201620809461 U CN 201620809461U CN 205945651 U CN205945651 U CN 205945651U
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Abstract
The utility model discloses a W wave band reaches too hertz frequency low side frequency multiplier relates to frequency multiplier technical field. The frequency multiplier includes schottky diode frequency doubling circuit, first to the 3 5880 base plate circuit, first to the quartzy filter circuit of second and an electric capacity, the input and the K type articulate of the 1 5880 base plate circuit, the output of the 1 5880 base plate circuit with the input of schottky diode frequency doubling circuit is connected, the output of the 2 5880 base plate circuit is connected with first quartzy filter circuit's input, first quartzy filter circuit's output is DC bias signal output part, the output of the 3 5880 base plate circuit with the quartzy filter circuit's of second input is connected. The doubling of frequency of frequency multiplier is efficient, the output tape is wide, simple process, integrated level are high.
Description
Technical field
The utility model is related to frequency multiplier technical field, more particularly, to a kind of W-waveband with universality and Terahertz frequency
Rate low side frequency multiplier.
Background technology
W-waveband is important window frequency in millimeter wave, and the transmit-receive technology research of this wave band is in current Millimeter Wave Applications
Heat subject.Because its carrier frequency is higher, W wave band can support bigger bandwidth and the transfer rate of Geng Gao.Because air
Loss is little, and W band signal can carry out long-distance transmissions.Numerous applications of W-waveband be unable to do without the signal source of this frequency range.
The THz wave frequency of broad sense refers to 100GHz to 10THz, wherein 1THz=1000GHz.THz ripple is in electromagnetism wave frequency
Very special position is occupied, THz technology is the very important intersection Disciplinary Frontiers that International Technology circle is generally acknowledged in spectrum.And W
Wave band refers to 75GHz to 110GHz it is seen that W-waveband is overlapping with the low end frequency of Terahertz.
In W-waveband or THz frequency low end range, semiconductor devices frequency-doubling method is generally adopted to obtain Solid Source.Should
Method is that millimeter wave is passed through non-linear semiconductor device frequency multiplication to W-waveband or THz frequency range, has compact conformation, is easy to adjust
Section, life-span length, waveform is controlled, the advantages of normal temperature works.Realize efficient frequency multiplication not only circuit knot using schottky diode device
Structure is simple, shg efficiency is higher, also has the higher output power that oscillation source has, frequency multiplication amplifier chain high frequency stability, low concurrently
The advantage of phase noise；Schottky diode device can involve sub- milli in the whole millimeter of 30GHz ~ 3000GHz by steady operation simultaneously
Meter wave frequency band.
From the point of view of current technology development, the signal source less than 40GHz and power amplifier techniques are highly developed, because
This can realize W-waveband and the signal source of Terahertz low end frequency from Ka wave band by the technology of three frequencys multiplication.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of W-waveband with universality and Terahertz frequency low
End frequency multiplier, the shg efficiency height of described frequency multiplier, output bandwidth width, process is simple, integrated level are high.
For solving above-mentioned technical problem, technical solution adopted in the utility model is：A kind of W-waveband and Terahertz frequency
Low side frequency multiplier it is characterised in that：Including Schottky diode frequency multiplier circuit, the first to the 3rd 5880 substrate circuit, first to
Second quartzy filter circuit and an electric capacity, the input of described one 5880 substrate circuit is connected with K-type joint, is used for drawing
Enter input radio frequency signal, the output end of described one 5880 substrate circuit and the input of described Schottky diode frequency multiplier circuit
Connect, the input of the described second to the 3rd 5880 substrate circuit is connected with sub-miniature A connector, for introducing Schottky diode frequency multiplication
The DC bias signal of circuit, the output end of described 2nd 5880 substrate circuit is connected with the input of the first quartzy filter circuit
Connect, the output end of the described first quartzy filter circuit is DC bias signal output end, when described Schottky diode frequency multiplication electricity
When GaAs Terahertz frequency doubled diode in road connects for differential concatenation, the output end of the first quartzy filter circuit and described Xiao Te
The DC bias signal input of based diode frequency multiplier circuit connects；The output end of described 3rd 5880 substrate circuit and described the
The input of two quartzy filter circuits connects, and the output end of the described second quartzy filter circuit is DC bias signal output end,
When the GaAs Terahertz frequency doubled diode in described Schottky diode frequency multiplier circuit connects for series aiding connection, the second quartz filter
The output end of wave circuit is connected with the DC bias signal input of described Schottky diode frequency multiplier circuit through described electric capacity.
Further technical scheme is：Described Schottky diode frequency multiplier circuit includes the first quartz base plate, the first biography
One end of defeated microstrip line is the RF signal input end of described frequency multiplier circuit, and first transmits the other end and first low pass of microstrip line
One end of wave filter connects, the other end of the first low pass filter successively through the first quartzy circuit, input radio frequency coupling microstrip line,
GaAs Terahertz frequency doubled diode is connected with one end of output radio-frequency match microstrip line, the other end of output radio-frequency match microstrip line
It is connected through one end that the second quartzy circuit exports excessive microstrip line with radio frequency, described first transmission microstrip line, the first LPF
Device, the first quartzy circuit, input radio frequency coupling microstrip line, GaAs Terahertz frequency doubled diode, output radio-frequency match microstrip line, the
Two quartzy circuit and radio frequency export excessive microstrip line and are fixed on the first quartz base plate, and it is horizontal that described radio frequency exports excessive microstrip line
Across in radio frequency output waveguide.
Further technical scheme is：Described GaAs Terahertz frequency doubled diode is 4 anode knot series aiding connection Schottky
Diode, 6 anode knot series aiding connection Schottky diodes, 4 anode knot differential concatenation Schottky diodes or 6 anodes knot are reversely gone here and there
Connection Schottky diode.
Further technical scheme is：Described one 5880 substrate circuit includes the one 5880 substrate and is located at first
The one 50 ohm microstrip on 5880 substrates, one end of described one 50 ohm microstrip is RF signal input end, another
End is connected with the RF signal input end of described Schottky diode frequency multiplier circuit by spun gold wire jumper.
Further technical scheme is：Described K-type joint by weld RF isolation be welded on the one 50 ohm micro-
On band line.
Further technical scheme is：Described 2nd 5880 substrate circuit includes the 2nd 5880 substrate and is located at second
The 2nd 50 ohm microstrip on 5880 substrates, one end of described 2nd 50 ohm microstrip is DC bias signal input,
The other end is passed through spun gold wire jumper and is connected with the input of the described first quartzy filter circuit.
Further technical scheme is：Described 3rd 5880 substrate circuit includes the 3rd 5880 substrate and is located at the 3rd
The 3rd 50 ohm microstrip on 5880 substrates, one end of described 3rd 50 ohm microstrip is DC bias signal input,
The other end is passed through spun gold wire jumper and is connected with the input of the described second quartzy filter circuit.
Further technical scheme is：Described sub-miniature A connector is welded on the 2nd 50 ohm microstrip by RF isolation
On.
Further technical scheme is：Described first quartzy filter circuit includes the second quartz base plate and is located at second
The first intermediate-frequency filter circuit on quartz base plate, one 50 ohm of each connection in two ends of described first intermediate-frequency filter circuit is micro-
Band line, the output end of described first quartzy filter circuit is passed through defeated on spun gold wire jumper and described Schottky diode frequency multiplier circuit
Enter radio-frequency match microstrip line to connect, for DC bias signal is introduced described GaAs Terahertz frequency doubled diode, now, described
GaAs Terahertz frequency doubled diode connects for differential concatenation, positioned at the minus earth of outermost two diodes.
Further technical scheme is：Described second quartzy filter circuit includes the 3rd quartz base plate and is located at the 3rd
The second intermediate-frequency filter circuit on quartz base plate, one 50 ohm of each connection in two ends of described second intermediate-frequency filter circuit is micro-
Band line, the output end of described second quartzy filter circuit is connected with one end of electric capacity by spun gold wire jumper, the other end of electric capacity and
The anode that described GaAs Terahertz frequency doubled diode is located at a diode in outside connects, described GaAs Terahertz frequency multiplication two pole
Pipe is located at the minus earth of another diode in outside, and now, described GaAs Terahertz frequency doubled diode is for differential concatenation even
Connect.
Have the beneficial effects that using produced by technique scheme：Described frequency multiplier shg efficiency is higher, 5% to 8%
Left and right；The output bandwidth width of frequency multiplier, frequency coverage 75GHz to 120GHz；Schottky diode adopts flip-chip bonding process, work
Skill is relatively simple；Integrated level is high, and using the circuit of hybrid integrated, a kind of circuit can be adapted to 4 kinds of different types of diodes.
Brief description
Fig. 1 is the first electrical block diagram of the utility model embodiment frequency multiplier；
Fig. 2 is the second electrical block diagram of the utility model embodiment frequency multiplier；
Wherein：1st, Schottky diode frequency multiplier circuit 101, the first quartz base plate 102, first transmit microstrip line 103, the
One low pass filter the 104, first quartzy circuit 105, input radio frequency coupling microstrip line 106, the first rectangular metal block 107, second
Rectangular metal block 108, GaAs Terahertz frequency doubled diode 109, the quartzy circuit 111 of output radio-frequency match microstrip line 110, second,
Radio frequency export excessive microstrip line 112, radio frequency output waveguide 2, the one 5880 substrate circuit 201, the one 5880 substrate 202,
One 50 ohm microstrip 3, the 2nd 5880 substrate circuit 301, the 2nd 5880 substrate 302, the 2nd 50 ohm microstrip 4,
The quartzy filter circuit 501 of 3rd 5880 substrate circuit 401, the 3rd 5880 substrate 402, the 3rd 50 ohm microstrip 5, first,
The quartzy filter circuit 601 of second quartz base plate 502, the first intermediate-frequency filter circuit 6, second, the 3rd quartz base plate 602,
Second intermediate-frequency filter circuit 7, electric capacity 8, spun gold wire jumper.
Specific embodiment
With reference to the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is carried out clearly
Chu, it is fully described by it is clear that described embodiment is only a part of embodiment of the present utility model, rather than whole
Embodiment.Based on the embodiment in the utility model, those of ordinary skill in the art are not under the premise of making creative work
The every other embodiment being obtained, broadly falls into the scope of the utility model protection.
Elaborate a lot of details in the following description in order to fully understand the utility model, but this practicality is new
Type can also be different from alternate manner described here to implement using other, and those skilled in the art can be without prejudice to this reality
With doing similar popularization in the case of new intension, therefore the utility model is not limited by following public specific embodiment.
As shown in Figure 1-2, the utility model embodiment discloses a kind of W-waveband and Terahertz frequency low side frequency multiplier, bag
Include Schottky diode frequency multiplier circuit 1, first to the 3rd 5880 substrate circuit, the first to the second quartzy filter circuit and one
Electric capacity 7.The input of described one 5880 substrate circuit 2 is connected with K-type joint, for introducing input radio frequency signal, described
The output end of one 5880 substrate circuits 2 is connected with the input of described Schottky diode frequency multiplier circuit 1；Described second to the 3rd
The input of 5880 substrate circuits is connected with sub-miniature A connector, for introducing the DC bias signal of Schottky diode frequency multiplier circuit,
The output end of described 2nd 5880 substrate circuit 3 is connected with the input of the first quartzy filter circuit 5；Described first quartz filtering
The output end of circuit 5 is DC bias signal output end, when the GaAs Terahertz in described Schottky diode frequency multiplier circuit 1 times
When frequency diode 108 connects for differential concatenation, the output end of the first quartzy filter circuit 5 is electric with described Schottky diode frequency multiplication
The DC bias signal input on road 1 connects, as shown in Figure 1；The output end and described second of described 3rd 5880 substrate circuit 4
The input of quartzy filter circuit 6 connects, and the output end of the described second quartzy filter circuit 6 is DC bias signal output end,
When the GaAs Terahertz frequency doubled diode 108 in described Schottky diode frequency multiplier circuit connects for series aiding connection, the second stone
The DC bias signal input through described electric capacity 7 and described Schottky diode frequency multiplier circuit 1 for the output end of English filter circuit 6
Connect, as shown in Figure 2.
As shown in Figure 1-2, described Schottky diode frequency multiplier circuit 1 includes the first quartz base plate 101, the first transmission micro-strip
One end of line 102 is the RF signal input end of described frequency multiplier circuit, and first transmits the other end and first low pass of microstrip line 102
One end of wave filter 103 connects, and the other end of the first low pass filter 103 is successively through the first quartzy circuit 104, input radio frequency
Join microstrip line 105, GaAs Terahertz frequency doubled diode 108 is connected with one end of output radio-frequency match microstrip line 109, exports radio frequency
The other end of coupling microstrip line 109 is connected through one end that the second quartzy circuit 110 exports excessive microstrip line 111 with radio frequency；Described
First transmission microstrip line 102, the quartzy circuit 104 of the first low pass filter 103, first, input radio frequency coupling microstrip line 105,
GaAs Terahertz frequency doubled diode 108, the quartzy circuit 110 of output radio-frequency match microstrip line 109, second and radio frequency output are excessively
Microstrip line 111 is fixed on the first quartz base plate, and described radio frequency exports excessive microstrip line 111 across in radio frequency output waveguide 112
On.First low pass filter 103 is 7 rank height impedance micro-strip, and its effect is the radiofrequency signal by input, stops defeated simultaneously
Go out radiofrequency signal to reveal to input.Radiofrequency signal produces each non-linear harmonic wave in frequency doubled diode, and frequency multiplier circuit is main
It is to extract the triple-frequency harmonics producing.Radio frequency output waveguide be WM-2032 rectangular waveguide, waveguide a and b be respectively 2032 microns and
1016 microns.
It is pointed out that GaAs Terahertz frequency doubled diode can tie series aiding connection Schottky diodes using 4 anodes,
Can be using 6 anode knot series aiding connection Schottky diodes, can be permissible using 4 anode knot differential concatenation Schottky diodes
Tie differential concatenation Schottky diode using 6 anodes.Can provide not for the feature of differential concatenation and series aiding connection diode
Same DC bias circuit.
As shown in Figure 1-2, described one 5880 substrate circuit 2 includes the one 5880 substrate 201 and is located at the one 5880 base
The one 50 ohm microstrip 202 on plate 201.One end of described one 50 ohm microstrip 202 is RF signal input end, separately
One end is connected with the RF signal input end of described Schottky diode frequency multiplier circuit 1 by spun gold wire jumper 8.Described K-type joint
It is welded in the one 50 ohm microstrip 202 by welding RF isolation.50 ohm microstrip primarily serve transmission signal and
The effect being connected with connector.
Because quartzy circuit is very fragile, if by quartzy circuit and radio frequency connector（Sub-miniature A connector）If being connected, easily
Cause circuit that rupture occurs, lead to global failure, the part being therefore connected with radio frequency connector adopts 5880 substrates.
As shown in Figure 1-2, described 2nd 5880 substrate circuit 3 includes the 2nd 5880 substrate 301 and is located at the 2nd 5880 base
The 2nd 50 ohm microstrip 302 on plate 301.One end of described 2nd 50 ohm microstrip 302 inputs for DC bias signal
End, the other end is passed through spun gold wire jumper 8 and is connected with the input of the described first quartzy filter circuit 5.Described sub-miniature A connector passes through radio frequency
Insulator is welded in the 2nd 50 ohm microstrip 302.
As shown in Figure 1-2, described 3rd 5880 substrate circuit 4 includes the 3rd 5880 substrate 401 and is located at the 3rd 5880 base
The 3rd 50 ohm microstrip 402 on plate 401.One end of described 3rd 50 ohm microstrip 402 inputs for DC bias signal
End, the other end is passed through spun gold wire jumper 8 and is connected with the input of the described second quartzy filter circuit 6.Described sub-miniature A connector passes through radio frequency
Insulator is welded in the 3rd 50 ohm microstrip 402.
As shown in figure 1, the described first quartzy filter circuit 5 includes the second quartz base plate 501 and is located at the second quartzy base
The first intermediate-frequency filter circuit 502 on plate 501.The two ends of described first intermediate-frequency filter circuit 502 respectively connect 50 Europe
Nurse microstrip line, the output end of the described first quartzy filter circuit 5 passes through spun gold wire jumper 8 and described Schottky diode frequency multiplier circuit
Input radio frequency coupling microstrip line 105 on 1 connects, for DC bias signal is introduced described GaAs Terahertz frequency doubled diode
108, now, described GaAs Terahertz frequency doubled diode 108 connects for differential concatenation, positioned at the moon of outermost two diodes
Pole is grounded.Wherein, the radiofrequency signal that mainly stops of intermediate-frequency filter circuit is revealed from this port.GaAs Terahertz frequency multiplication two pole
Manage and the first rectangular metal block 106 and 107 two metal derbies of the second rectangular metal block are connected on outermost two electrodes
It is connected with cavity by conducting resinl, realize radio frequency and DC earthing.Using No. three shown in accompanying drawing 1 time frequency multiplier circuit, it is non-equilibrium
Formula frequency multiplier circuit, because Schottky diode two ends are directly grounded, hot loop is good, is conducive to the radiating of diode.
As shown in Fig. 2 the described second quartzy filter circuit 6 includes the 3rd quartz base plate 601 and is located at the 3rd quartzy base
The second intermediate-frequency filter circuit 602 on plate 601.The two ends of described second intermediate-frequency filter circuit 602 respectively connect 50 Europe
Nurse microstrip line, the output end of the described second quartzy filter circuit 6 is connected with one end of electric capacity 7 by spun gold wire jumper 8, electric capacity 7
The anode of the diode that the other end is located at outside with described GaAs Terahertz frequency doubled diode 108 is connected, and described GaAs is too
Hertz frequency doubled diode 108 is located at the minus earth of another diode in outside, now, described GaAs Terahertz frequency multiplication two pole
Pipe 108 connects for differential concatenation.
As shown in Fig. 2 diode one end is grounded by metal rectangular block, metal derby is connected with cavity by conducting resinl, real
Existing radio frequency and DC earthing.The Schottky diode other end is welded on another metal rectangular block, and metal rectangular block passes through spun gold
Wire jumper connects a chip capacity, and chip capacity connects intermediate-frequency filter quartz circuit by spun gold wire jumper, and quartz base plate passes through
Spun gold wire jumper connects 5880 substrates, 5880 substrate connection sub-miniature A connectors.The effect of wherein chip capacity is virtual to radio frequency offer
Ground, can introduce direct current biasing simultaneously.Using No. three shown in accompanying drawing 2 time frequency multiplier circuit, it is balanced type frequency multiplier circuit, using balance
Formula frequency multiplication, can effectively suppress even-order harmonic.
It is pointed out that all being welded using conducting resinl in welding process.Schottky diode adopts face-down bonding
Technique.Schottky diode adopts the Schottky diode that epitaxial layer concentration is 2e17cm-3 doped in concentrations profiled, and anode is using circle
The Schottky diode that 6 microns of shape diameter, junction capacity is 30 to 40fF, and resistance is 2 to 3 ohm, and such diode can hold
By larger input power.The length and width of all microstrip lines described in the utility model needs to calculate, the setting of waveguide slot
Meter is also required to calculate, and meets the related request of frequency multiplier.The manufacture craft of quartzy circuit is very ripe, quartz electricity
Generally 30 to 75 microns of the thickness of base board.
Described frequency multiplier shg efficiency is higher, about 5% to 8%；The output bandwidth width of frequency multiplier, frequency coverage 75GHz
To 120GHz；Schottky diode adopts flip-chip bonding process, and technique is relatively simple；Integrated level is high, using the electricity of hybrid integrated
Road, a kind of circuit can be adapted to 4 kinds of different types of diodes.
Claims (10)
1. a kind of W-waveband and Terahertz frequency low side frequency multiplier it is characterised in that：Including Schottky diode frequency multiplier circuit（1）、
First to the 3rd 5880 substrate circuit, the first to the second quartzy filter circuit and an electric capacity（7）, described one 5880 substrate
Circuit（2）Input be connected with K-type joint, for introducing input radio frequency signal, described one 5880 substrate circuit（2）Defeated
Go out end and described Schottky diode frequency multiplier circuit（1）Input connect, the described second to the 3rd 5880 substrate circuit defeated
Enter end and be connected with sub-miniature A connector, for introducing the DC bias signal of Schottky diode frequency multiplier circuit, described 2nd 5880 substrate
Circuit（3）Output end and the first quartzy filter circuit（5）Input connect, described first quartzy filter circuit（5）Defeated
Going out end is DC bias signal output end, when described Schottky diode frequency multiplier circuit（1）In GaAs Terahertz frequency multiplication two pole
Pipe（108）When connecting for differential concatenation, the first quartzy filter circuit（5）Output end and described Schottky diode frequency multiplier circuit
（1）DC bias signal input connect；Described 3rd 5880 substrate circuit（4）Output end with described second quartz filtering
Circuit（6）Input connect, described second quartzy filter circuit（6）Output end be DC bias signal output end, work as institute
State the GaAs Terahertz frequency doubled diode in Schottky diode frequency multiplier circuit（108）When connecting for series aiding connection, the second quartz
Filter circuit（6）Output end through described electric capacity（7）With described Schottky diode frequency multiplier circuit（1）DC bias signal defeated
Enter end to connect.
2. W-waveband as claimed in claim 1 and Terahertz frequency low side frequency multiplier it is characterised in that：Described Schottky two pole
Pipe frequency multiplier circuit（1）Including the first quartz base plate（101）, the first transmission microstrip line（102）One end be described frequency multiplier circuit
RF signal input end, the first transmission microstrip line（102）The other end and the first low pass filter（103）One end connect, the
One low pass filter（103）The other end successively through the first quartzy circuit（104）, input radio frequency coupling microstrip line（105）、GaAs
Terahertz frequency doubled diode（108）With output radio-frequency match microstrip line（109）One end connect, export radio-frequency match microstrip line
（109）The other end through the second quartzy circuit（110）Export excessive microstrip line with radio frequency（111）One end connect, described first
Transmission microstrip line（102）, the first low pass filter（103）, the first quartzy circuit（104）, input radio frequency coupling microstrip line
（105）, GaAs Terahertz frequency doubled diode（108）, output radio-frequency match microstrip line（109）, the second quartzy circuit（110）And
Radio frequency exports excessive microstrip line（111）It is fixed on the first quartz base plate, described radio frequency exports excessive microstrip line（111）Across
Radio frequency output waveguide（112）On.
3. W-waveband as claimed in claim 2 and Terahertz frequency low side frequency multiplier it is characterised in that：Described GaAs Terahertz
Frequency doubled diode（108）Tie series aiding connection Schottky diode, 6 anode knot series aiding connection Schottky diodes, 4 sun for 4 anodes
Pole knot differential concatenation Schottky diode or 6 anodes knot differential concatenation Schottky diode.
4. the W-waveband as described in any one in claim 1-3 and Terahertz frequency low side frequency multiplier it is characterised in that：Institute
State the one 5880 substrate circuit（2）Including the one 5880 substrate（201）With positioned at the one 5880 substrate（201）On the one 50 Europe
Nurse microstrip line（202）, described one 50 ohm microstrip（202）One end be RF signal input end, the other end pass through spun gold
Wire jumper（8）With described Schottky diode frequency multiplier circuit（1）RF signal input end connect.
5. W-waveband as claimed in claim 4 and Terahertz frequency low side frequency multiplier it is characterised in that：Described K-type joint passes through
Welding RF isolation is welded on the one 50 ohm microstrip（202）On.
6. the W-waveband as described in any one in claim 1-3 and Terahertz frequency low side frequency multiplier it is characterised in that：Institute
State the 2nd 5880 substrate circuit（3）Including the 2nd 5880 substrate（301）With positioned at the 2nd 5880 substrate（301）On the 2nd 50 Europe
Nurse microstrip line（302）, described 2nd 50 ohm microstrip（302）One end be DC bias signal input, the other end passes through
Spun gold wire jumper（8）With the described first quartzy filter circuit（5）Input connect.
7. the W-waveband as described in any one in claim 1-3 and Terahertz frequency low side frequency multiplier it is characterised in that：Institute
State the 3rd 5880 substrate circuit（4）Including the 3rd 5880 substrate（401）With positioned at the 3rd 5880 substrate（401）On the 3rd 50 Europe
Nurse microstrip line（402）, described 3rd 50 ohm microstrip（402）One end be DC bias signal input, the other end passes through
Spun gold wire jumper（8）With the described second quartzy filter circuit（6）Input connect.
8. W-waveband as claimed in claim 6 and Terahertz frequency low side frequency multiplier it is characterised in that：Described sub-miniature A connector passes through
RF isolation is welded on the 2nd 50 ohm microstrip（302）On.
9. W-waveband as claimed in claim 2 or claim 3 and Terahertz frequency low side frequency multiplier it is characterised in that：Described first quartz
Filter circuit（5）Including the second quartz base plate（501）And it is located at the second quartz base plate（501）On first intermediate-frequency filter electricity
Road（502）, described first intermediate-frequency filter circuit（502）Two ends respectively connect 50 ohm microstrip, described first quartz
Filter circuit（5）Output end pass through spun gold wire jumper（8）With described Schottky diode frequency multiplier circuit（1）On input radio frequency
Join microstrip line（105）Connect, for DC bias signal is introduced described GaAs Terahertz frequency doubled diode（108）, now, institute
State GaAs Terahertz frequency doubled diode（108）Connect for differential concatenation, positioned at the minus earth of outermost two diodes.
10. W-waveband as claimed in claim 2 or claim 3 and Terahertz frequency low side frequency multiplier it is characterised in that：Described second stone
English filter circuit（6）Including the 3rd quartz base plate（601）And it is located at the 3rd quartz base plate（601）On the second intermediate-frequency filter
Circuit（602）, described second intermediate-frequency filter circuit（602）Two ends respectively connect 50 ohm microstrip, described second stone
English filter circuit（6）Output end pass through spun gold wire jumper（8）With electric capacity（7）One end connect, electric capacity（7）The other end with described
GaAs Terahertz frequency doubled diode（108）The anode of a diode positioned at outside connects, described GaAs Terahertz frequency multiplication two
Pole pipe（108）Positioned at the minus earth of another diode in outside, now, described GaAs Terahertz frequency doubled diode（108）
Connect for differential concatenation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620809461.8U CN205945651U (en) | 2016-07-29 | 2016-07-29 | W wave band reaches too hertz frequency low side frequency multiplier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620809461.8U CN205945651U (en) | 2016-07-29 | 2016-07-29 | W wave band reaches too hertz frequency low side frequency multiplier |
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| CN205945651U true CN205945651U (en) | 2017-02-08 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106130486A (en) * | 2016-07-29 | 2016-11-16 | 中国电子科技集团公司第十三研究所 | W-waveband and Terahertz frequency low side doubler |
| CN109412535A (en) * | 2018-12-11 | 2019-03-01 | 四川众为创通科技有限公司 | A kind of efficient 170GHz frequency tripler |
| CN109959853A (en) * | 2019-04-10 | 2019-07-02 | 嘉兴腓特烈太赫科技有限公司 | The method for screening 4 pipe balanced type Terahertz frequency triplers based on DC detecting |
| CN110045261A (en) * | 2019-04-10 | 2019-07-23 | 嘉兴腓特烈太赫科技有限公司 | The method for screening 6 pipe balanced type Terahertz frequency triplers based on DC detecting |
-
2016
- 2016-07-29 CN CN201620809461.8U patent/CN205945651U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106130486A (en) * | 2016-07-29 | 2016-11-16 | 中国电子科技集团公司第十三研究所 | W-waveband and Terahertz frequency low side doubler |
| CN106130486B (en) * | 2016-07-29 | 2023-02-28 | 中国电子科技集团公司第十三研究所 | W-band and terahertz-frequency low-end frequency multiplier |
| CN109412535A (en) * | 2018-12-11 | 2019-03-01 | 四川众为创通科技有限公司 | A kind of efficient 170GHz frequency tripler |
| CN109959853A (en) * | 2019-04-10 | 2019-07-02 | 嘉兴腓特烈太赫科技有限公司 | The method for screening 4 pipe balanced type Terahertz frequency triplers based on DC detecting |
| CN110045261A (en) * | 2019-04-10 | 2019-07-23 | 嘉兴腓特烈太赫科技有限公司 | The method for screening 6 pipe balanced type Terahertz frequency triplers based on DC detecting |
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