CN107181467B - Terahertz balanced type secondary frequency multiplication circuit with single-sided quartz fin line and double diodes - Google Patents
Terahertz balanced type secondary frequency multiplication circuit with single-sided quartz fin line and double diodes Download PDFInfo
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- CN107181467B CN107181467B CN201710392372.7A CN201710392372A CN107181467B CN 107181467 B CN107181467 B CN 107181467B CN 201710392372 A CN201710392372 A CN 201710392372A CN 107181467 B CN107181467 B CN 107181467B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/16—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source using uncontrolled rectifying devices, e.g. rectifying diodes or Schottky diodes
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Abstract
The invention discloses a terahertz balanced type secondary frequency doubling circuit with single-sided quartz fin lines and double diodes, and relates to the technical field of multiple frequency doubling conversion circuits. The circuit comprises a quartz substrate fin line circuit, two GaAs-based terahertz Schottky diodes connected in series in an inverse mode, a radio frequency input waveguide and a radio frequency output waveguide, wherein the quartz substrate fin line circuit comprises a quartz circuit substrate, and a front side fin line and a rear side fin line which are positioned on the quartz circuit substrate; one end of each of the two Schottky diodes is electrically connected with the front side fin line, the other end of each of the two Schottky diodes is electrically connected with the rear side fin line, and the Schottky diodes are located at positions where the distance between the front side fin line and the rear side fin line is kept unchanged. The circuit enables the radio frequency input and output waveguides to be on the same straight line, is convenient for circuit staff to design, is simpler to process, can bear high-power input and improves output power.
Description
Technical Field
The invention relates to the technical field of multiple frequency multiplication conversion circuits, in particular to a single-sided quartz fin line double-diode terahertz balance type secondary frequency multiplication circuit.
Background
Terahertz (THz) waves refer in a broad sense to electromagnetic waves having a frequency in the range of 0.1-10THz, where 1 thz=1000 GHz, and terahertz frequencies are also considered to refer to electromagnetic waves in the range of 0.3THz-3 THz. THz wave occupies a very specific position in the electromagnetic spectrum, and THz technology is a very important cross-front area recognized by the international technology community.
The terahertz frequency source is expanded based on the solid-state electronic technology. The current circuit form for terahertz frequency multiplication mainly comprises a balanced type and an unbalanced type. In the development process of circuit technology, the double frequency multiplication technology is widely developed due to high frequency multiplication efficiency. In circuits used for double frequency multiplication, the efficiency can be as high as 40% to 50% based on balanced circuits. In a typical balanced frequency doubling circuit, a terahertz schottky diode spans an input radio frequency waveguide through a quartz circuit, and the input radio frequency waveguide and an output radio frequency waveguide are generally perpendicular at 90 degrees and are not in a straight line. In addition, a multi-junction schottky diode is adopted in a general frequency multiplication circuit, so that high power cannot be born due to the small number of junctions.
Disclosure of Invention
The invention aims to solve the technical problem of providing the terahertz balanced type secondary frequency doubling circuit with the single-sided quartz fin line and the double diodes, wherein the radio frequency input and output waveguides of the circuit can be on the same straight line, so that the design of circuit staff is facilitated, the processing is simpler, the high-power input can be borne, and the output power is improved.
In order to solve the technical problems, the invention adopts the following technical scheme: a single-sided quartz fin line double-diode terahertz balance type secondary frequency doubling circuit is characterized in that: the device comprises a quartz substrate fin line circuit, two GaAs-based terahertz Schottky diodes in reverse series connection, a radio frequency input waveguide and a radio frequency output waveguide, wherein the quartz substrate fin line circuit comprises a quartz circuit substrate, a first input fin line, a second input fin line, a first output fin line and a second output fin line, wherein the first input fin line, the second input fin line, the first input fin line, the second input fin line and the first output fin line are arranged on the quartz circuit substrate; one end of each of the two Schottky diodes is electrically connected with the front side fin line, the other end of each of the two Schottky diodes is electrically connected with the rear side fin line, and the Schottky diodes are positioned at positions where the distance between the front side fin line and the rear side fin line is kept unchanged; one end of the quartz circuit substrate is positioned in the waveguide slot of the radio frequency input waveguide, and the other end of the quartz circuit substrate is positioned in the waveguide slot of the radio frequency output waveguide.
The further technical proposal is that: the frequency doubling circuit further comprises a quartz matching adjusting dielectric block, one end of the dielectric block is electrically connected with the front side fin line through conductive adhesive, and the other end of the dielectric block is electrically connected with the rear side fin line through conductive adhesive.
The further technical proposal is that: the quartz circuit substrate comprises an input quartz circuit substrate and an output quartz circuit substrate, the input fin line is located on the input quartz circuit substrate, and the output fin line is located on the output quartz circuit substrate.
The further technical proposal is that: the width of the input quartz circuit substrate is larger than that of the output quartz circuit substrate.
The further technical proposal is that: and two ends of the Schottky diode are electrically connected with the fin line through conductive adhesive.
The further technical proposal is that: the Schottky diode comprises two groups of Schottky diode junction strings connected in series, each diode junction string comprises more than two Schottky diode junctions connected in series, the same electrodes of the two diode junction strings positioned on the inner side are connected into a whole through a central bonding pad, and the electrodes of the two diode junction strings positioned on the outer side are the two electrodes of the GaAs-based terahertz Schottky diode connected in reverse series.
The further technical proposal is that: the diameter of a single Schottky diode junction in the Schottky diode is 2 microns, the series resistance is 5 ohms, the junction capacitance is 7fF, and the parasitic capacitance is 3fF.
The further technical proposal is that: the fin line is made of Au and has a thickness of 2-4 microns.
The further technical proposal is that: the thickness of the quartz circuit substrate is 30 micrometers to 75 micrometers.
The further technical proposal is that: the quartz substrate fin line circuit is placed at the b-direction center of the waveguide.
The beneficial effects of adopting above-mentioned technical scheme to produce lie in: compared with the traditional balanced frequency doubling circuit, the radio frequency input/output waveguide of the circuit is on the same straight line, so that the design of circuit personnel is facilitated, and meanwhile, the processing is simpler; quartz fin line transition is adopted in the transition of the input waveguide and the output waveguide; a quartz matching adjusting medium block can be added for impedance adjustment, so that the frequency doubling efficiency is improved; the diode adopts a zero bias circuit, is not easy to burn out and has high reliability; and two Schottky diodes which are connected in series in an anti-direction are adopted, so that high-power input can be born, and the output power is improved.
Drawings
FIG. 1 is a schematic top view of a circuit according to a first embodiment of the invention;
FIG. 2 is a schematic top view of a circuit according to a second embodiment of the invention;
FIG. 3 is a schematic top view of a fin circuit of a quartz substrate according to an embodiment of the invention;
fig. 4 is a schematic top view of the GaAs-based terahertz schottky diode in reverse series in the embodiment of the present invention;
wherein: 1. the quartz substrate fin line circuit 11, the quartz circuit substrate 111, the input quartz circuit substrate 112, the output quartz circuit substrate 12, the first input fin line 13, the second input fin line 14, the first output fin line 15, the second output fin line 2, the reverse series GaAs-based terahertz Schottky diode 21, the Schottky diode junction 22, the central bonding pad 3, the radio frequency input waveguide 4, the radio frequency output waveguide 5 and the quartz matching adjusting medium block.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
Example 1
As shown in fig. 1, the embodiment of the invention discloses a single-sided quartz fin line double-diode terahertz balanced type secondary frequency multiplication circuit, which comprises a quartz substrate fin line circuit 1, two GaAs-based terahertz schottky diodes 2 which are connected in reverse series, a radio frequency input waveguide 3 and a radio frequency output waveguide 4. As shown in fig. 3, the quartz substrate fin line circuit 1 includes a quartz circuit substrate 11, and first to second input fin lines 12, 13 and first to second output fin lines 14, 15 on the quartz circuit substrate 11. One end of the first input fin line 12 is connected to one end of the first output fin line 14 to form a front side fin line, and one end of the second input fin line 13 is connected to one end of the second output fin line 15 to form a rear side fin line. The front fin line and the rear fin line keep a certain interval, the distance between the front fin line and the rear fin line gradually decreases from left to right, then a certain distance is kept unchanged, and then the distance gradually increases.
As shown in fig. 1, one ends of the two schottky diodes are electrically connected with the front side fin line, the other ends of the two schottky diodes are electrically connected with the rear side fin line, and the schottky diodes are positioned at positions where the distance between the front side fin line and the rear side fin line is kept unchanged; one end of the quartz circuit substrate 11 is located in the waveguide slot of the radio frequency input waveguide 3, and the other end of the quartz circuit substrate 11 is located in the waveguide slot of the radio frequency output waveguide 4. As shown in fig. 4, the schottky diode includes two groups of schottky diode junction strings connected in series, each of the diode junction strings includes more than two schottky diode junctions 21 connected in series, the same electrodes of the two diode junction strings located on the inner side are connected into a whole through a central bonding pad 22, and the electrodes of the two diode junction strings located on the outer side are the two electrodes of the GaAs-based terahertz schottky diode connected in reverse series.
Compared with the traditional balanced frequency doubling circuit, the circuit radio frequency input/output waveguide is on the same straight line, so that the design of circuit personnel is facilitated, and meanwhile, the processing is simpler; quartz fin line transition is adopted in the transition of the input waveguide and the output waveguide; the diode adopts a zero bias circuit, is not easy to burn out and has high reliability; and two Schottky diodes which are connected in series in an anti-direction are adopted, so that high-power input can be born, and the output power is improved.
Example two
As shown in fig. 2, the embodiment of the invention discloses a single-sided quartz fin line double-diode terahertz balanced type secondary frequency multiplication circuit, which comprises a quartz substrate fin line circuit 1, two GaAs-based terahertz schottky diodes 2 which are connected in reverse series, a radio frequency input waveguide 3, a radio frequency output waveguide 4 and a quartz matching adjusting medium block 5. As shown in fig. 3, the quartz substrate fin line circuit 1 includes a quartz circuit substrate 11, and first to second input fin lines 12, 13 and first to second output fin lines 14, 15 on the quartz circuit substrate 11. One end of the first input fin line 12 is connected with one end of the first output fin line 14 to form a front side fin line, one end of the second input fin line 13 is connected with one end of the second output fin line 15 to form a rear side fin line, a certain interval is kept between the front side fin line and the rear side fin line, the distance between the front side fin line and the rear side fin line is gradually reduced from left to right, a certain distance is kept unchanged, and the distance is gradually increased.
As shown in fig. 2, one end of each schottky diode is electrically connected to the front side fin line, the other end of each schottky diode is electrically connected to the rear side fin line, and the schottky diode is located at a position where the distance between the front side fin line and the rear side fin line is kept constant; one end of the quartz circuit substrate 11 is located in the waveguide slot of the radio frequency input waveguide 3, and the other end of the quartz circuit substrate 11 is located in the waveguide slot of the radio frequency output waveguide 4. One end of the dielectric block is electrically connected with the front side fin line through conductive adhesive, and the other end of the dielectric block is electrically connected with the rear side fin line through conductive adhesive.
As shown in fig. 4, the schottky diode includes two groups of schottky diode junction strings connected in series, each of the diode junction strings includes more than two schottky diode junctions 21 connected in series, the same electrodes of the two diode junction strings located on the inner side are connected into a whole through a central bonding pad 22, and the electrodes of the two diode junction strings located on the outer side are the two electrodes of the GaAs-based terahertz schottky diode connected in reverse series.
Compared with the traditional balanced frequency doubling circuit, the circuit radio frequency input/output waveguide is on the same straight line, so that the design of circuit personnel is facilitated, and meanwhile, the processing is simpler; quartz fin line transition is adopted in the transition of the input waveguide and the output waveguide; a quartz matching adjusting medium block can be added for impedance adjustment, so that the frequency doubling efficiency is improved; the diode adopts a zero bias circuit, is not easy to burn out and has high reliability; and two Schottky diodes which are connected in series in an anti-direction are adopted, so that high-power input can be born, and the output power is improved.
Example III
As shown in fig. 2, the embodiment of the invention discloses a single-sided quartz fin line double-diode terahertz balanced type secondary frequency multiplication circuit, which comprises a quartz substrate fin line circuit 1, two GaAs-based terahertz schottky diodes 2 which are connected in reverse series, a radio frequency input waveguide 3, a radio frequency output waveguide 4 and a quartz matching adjusting medium block 5. As shown in fig. 3, the quartz substrate fin line circuit 1 includes a quartz circuit substrate 11, and first to second input fin lines 12, 13 and first to second output fin lines 14, 15 on the quartz circuit substrate 11. One end of the first input fin line 12 is connected with one end of the first output fin line 14 to form a front side fin line, one end of the second input fin line 13 is connected with one end of the second output fin line 15 to form a rear side fin line, a certain interval is kept between the front side fin line and the rear side fin line, the distance between the front side fin line and the rear side fin line is gradually reduced from left to right, a certain distance is kept unchanged, and the distance is gradually increased.
As shown in fig. 2, one end of each schottky diode is electrically connected to the front side fin line, the other end of each schottky diode is electrically connected to the rear side fin line, and the schottky diode is located at a position where the distance between the front side fin line and the rear side fin line is kept constant; one end of the quartz circuit substrate 11 is located in the waveguide slot of the radio frequency input waveguide 3, and the other end of the quartz circuit substrate 11 is located in the waveguide slot of the radio frequency output waveguide 4. One end of the dielectric block is electrically connected with the front side fin line through conductive adhesive, and the other end of the dielectric block is electrically connected with the rear side fin line through conductive adhesive.
As shown in fig. 4, the schottky diode includes two groups of schottky diode junction strings connected in series, each of the diode junction strings includes more than two schottky diode junctions 21 connected in series, the same electrodes of the two diode junction strings located on the inner side are connected into a whole through a central bonding pad 22, and the electrodes of the two diode junction strings located on the outer side are the two electrodes of the GaAs-based terahertz schottky diode connected in reverse series.
The present embodiment will be described using 110GHz input and 220GHz output as examples.
The radio frequency input waveguide (WM-2032 rectangular waveguide, a and b are 2032 microns and 1016 microns respectively) introduces 110GHz radio frequency signals, the quartz substrate fin line circuit introduces the radio frequency signals from the input waveguide to the quartz circuit substrate for transmission, and converts TE10 modes in the input waveguide onto the quartz fin line, so that the conversion from waveguide modes to fin line microstrip modes is realized, the impedance conversion from the waveguide to the planar microstrip circuit is also realized, and the fin line concentrates energy in the waveguide on two sides of the fin line. The radio frequency input signal is coupled into the Schottky diode through the quartz matching adjusting medium block, the diode radio frequency input signal is reversely connected in series, and the radio frequency output end is connected in parallel in the same direction, so that the characteristics of the balanced frequency doubling circuit are met. And two ends of the Schottky diode are connected with the fin line through conductive adhesive, and a flip-chip welding process is adopted. Due to the nonlinear effect of the schottky diode, nonlinear harmonics of the schottky diode will be generated, and due to the balanced operation, the odd harmonics are suppressed, so that only even harmonics, i.e. 2, 4, 6 etc. harmonics will be output. The generated even harmonic is coupled into the output waveguide, which in this example is a WR4 standard waveguide, for output by fin line transition of the output waveguide port.
And the output end of the quartz substrate fin line circuit is designed to mainly carry out optimal design on the 2 nd harmonic wave, and the energy of the 2 nd harmonic wave is coupled to the maximum. In actual operation, the size and the position of the medium block are adjusted by adjusting quartz matching to obtain the highest frequency doubling efficiency.
The transition of a standard rectangular waveguide to a quartz circuit is accomplished by a fin line. The fin line adopts a cosine square gradient curve form, and the transition model adopts the following groove width gradient form formula.
In the formula, L is the length of the gradual change section of the fin line, and w is the width of the groove. The fin slot width w becomes smaller, the impedance becomes lower, and the matching of the diode to the radio frequency signal is facilitated. The w in the traditional substrate transmission line can only reach 0.1mm, and when a quartz substrate is adopted, accurate processing can be carried out to reach 1um, and the designed fin line w is 20um. t is the longitudinal coordinate of the fin line transmission line with the center of the waveguide E face as the origin, and b is the height of the reduced waveguide.
The quartz circuit substrate is placed in the waveguide groove of the radio frequency input waveguide and the radio frequency output waveguide, and the quartz circuit substrate is grounded with the actual cavity through conductive adhesive. The quartz circuit is placed as far as possible at the waveguide width direction center (at the waveguide b direction center). The thickness of the quartz circuit substrate is typically 30 to 75 microns.
Furthermore, it is preferable that the diameter of the individual schottky diode junctions in the schottky diode is 2 microns, the series resistance is 5 ohms, the junction capacitance is 7fF, and the parasitic capacitance is 3fF.
Compared with the traditional balanced frequency doubling circuit, the circuit radio frequency input/output waveguide is on the same straight line, so that the design of circuit personnel is facilitated, and meanwhile, the processing is simpler; quartz fin line transition is adopted in the transition of the input waveguide and the output waveguide; a quartz matching adjusting medium block can be added for impedance adjustment, so that the frequency doubling efficiency is improved; the diode adopts a zero bias circuit, is not easy to burn out and has high reliability; and two Schottky diodes which are connected in series in an anti-direction are adopted, so that high-power input can be born, and the output power is improved.
Claims (10)
1. A single-sided quartz fin line double-diode terahertz balance type secondary frequency doubling circuit is characterized in that: the dual-band-pass filter comprises a quartz substrate fin line circuit (1), two GaAs-based terahertz Schottky diodes (2) which are connected in series in an anti-mode, a radio frequency input waveguide (3) and a radio frequency output waveguide (4), wherein the quartz substrate fin line circuit (1) comprises a quartz circuit substrate (11), first to second input fin lines (12, 13) and first to second output fin lines (14, 15) which are positioned on the quartz circuit substrate (11), one end of the first input fin line (12) is connected with one end of the first output fin line (14) to form a front side fin line, one end of the second input fin line (13) is connected with one end of the second output fin line (15) to form a rear side fin line, a certain interval is kept between the front side fin line and the rear side fin line, the distance between the front side fin line and the rear side fin line is gradually reduced from left to right, and then a certain distance is kept unchanged, and gradually increases; one end of each of the two Schottky diodes is electrically connected with the front side fin line, the other end of each of the two Schottky diodes is electrically connected with the rear side fin line, and the Schottky diodes are positioned at positions where the distance between the front side fin line and the rear side fin line is kept unchanged; one end of the quartz circuit substrate (11) is positioned in the waveguide slot of the radio frequency input waveguide (3), and the other end of the quartz circuit substrate (11) is positioned in the waveguide slot of the radio frequency output waveguide (4).
2. The single-sided quartz fin line dual diode terahertz balanced type secondary frequency doubling circuit of claim 1, characterized in that the frequency doubling circuit further comprises a quartz matching adjusting dielectric block (5), one end of the dielectric block is electrically connected with the front side fin line through conductive adhesive, and the other end of the dielectric block is electrically connected with the rear side fin line through conductive adhesive.
3. The single-sided quartz fin line dual diode terahertz balanced type frequency doubling circuit of claim 1, characterized in that the quartz circuit substrate (11) includes an input quartz circuit substrate (111) and an output quartz circuit substrate (112), the input fin line being located on the input quartz circuit substrate (111), the output fin line being located on the output quartz circuit substrate (112).
4. The single-sided quartz fin line dual diode terahertz balanced type frequency doubling circuit of claim 3, characterized in that the width of the input quartz circuit substrate (111) is larger than the width of the output quartz circuit substrate (112).
5. The single-sided quartz fin line dual diode terahertz balanced type secondary frequency doubling circuit of claim 1, wherein two ends of the schottky diode are electrically connected with the fin line through conductive adhesive.
6. The single-sided quartz fin line dual diode terahertz balanced type secondary frequency doubling circuit of claim 1, characterized in that the schottky diode comprises two groups of schottky diode junction strings connected in series with each other, each diode junction string comprises more than two schottky diode junctions (21) connected in series with each other, the same electrodes of the two diode junction strings positioned on the inner side are connected into a whole through a central bonding pad (22), and the electrodes of the two diode junction strings positioned on the outer side are the two electrodes of the GaAs-based terahertz schottky diode connected in reverse series.
7. The single sided quartz fin line dual diode terahertz balanced type frequency doubling circuit of claim 6, characterized in that the diameter of a single schottky diode junction (21) in the schottky diode is 2 microns, the series resistance is 5 ohms, the junction capacitance is 7fF, and the parasitic capacitance is 3fF.
8. The single-sided quartz fin line dual diode terahertz balanced type frequency doubling circuit of claim 1, wherein the fin line is made of Au and has a thickness of 2 to 4 micrometers.
9. The single-sided quartz fin line dual diode terahertz balanced type frequency doubling circuit of claim 1, characterized in that the thickness of the quartz circuit substrate (11) is 30 to 75 micrometers.
10. The single-sided quartz fin line dual diode terahertz balanced type frequency doubling circuit of claim 1, wherein the quartz substrate fin line circuit is placed at the b-direction center of the waveguide.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710392372.7A CN107181467B (en) | 2017-05-27 | 2017-05-27 | Terahertz balanced type secondary frequency multiplication circuit with single-sided quartz fin line and double diodes |
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| CN201710392372.7A CN107181467B (en) | 2017-05-27 | 2017-05-27 | Terahertz balanced type secondary frequency multiplication circuit with single-sided quartz fin line and double diodes |
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| CN107181467B true CN107181467B (en) | 2023-07-04 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026927A (en) * | 2016-07-29 | 2016-10-12 | 中国电子科技集团公司第十三研究所 | Terahertz double frequency unbalanced circuit with high power capacity |
| GB201705493D0 (en) * | 2017-04-05 | 2017-05-17 | Univ London Queen Mary | Subharmonic mixer |
| CN206743196U (en) * | 2017-05-27 | 2017-12-12 | 中国电子科技集团公司第十三研究所 | One side quartz fin line double diode Terahertz balanced type secondary frequency multiplication circuit |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106026927A (en) * | 2016-07-29 | 2016-10-12 | 中国电子科技集团公司第十三研究所 | Terahertz double frequency unbalanced circuit with high power capacity |
| GB201705493D0 (en) * | 2017-04-05 | 2017-05-17 | Univ London Queen Mary | Subharmonic mixer |
| CN206743196U (en) * | 2017-05-27 | 2017-12-12 | 中国电子科技集团公司第十三研究所 | One side quartz fin line double diode Terahertz balanced type secondary frequency multiplication circuit |
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