CN111510073A - Terahertz broadband third harmonic mixer - Google Patents
Terahertz broadband third harmonic mixer Download PDFInfo
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- CN111510073A CN111510073A CN202010436725.0A CN202010436725A CN111510073A CN 111510073 A CN111510073 A CN 111510073A CN 202010436725 A CN202010436725 A CN 202010436725A CN 111510073 A CN111510073 A CN 111510073A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention provides a terahertz broadband third harmonic mixer which comprises a mixer circuit substrate, a metal cavity and a Schottky diode, wherein the metal cavity is provided with a plurality of grooves; the frequency mixer circuit substrate is provided with a waveguide-suspension strip line-microstrip transition structure, a grounding through hole, a suspension strip, an open-circuit line branch, a metal ground, a medium-frequency low-pass filter, a medium-frequency end microstrip line, a fan-shaped probe and a microstrip line, and the metal cavity comprises a radio-frequency end waveguide and a local oscillator end waveguide. The invention adopts a waveguide-suspended strip line-microstrip transition structure, reduces the loss caused by mismatch, increases the effective bandwidth, and has small size, easy processing and low cost.
Description
Technical Field
The invention belongs to the technical field of terahertz odd harmonic mixers, and particularly relates to a terahertz broadband third harmonic mixer.
Background
With the increasing requirements of ultra-high-speed data transmission and high-resolution imaging, the requirements of application systems such as communication and radar on the working bandwidth are higher and higher, and the development and utilization of terahertz wave spectrum resources are concerned accordingly. In a related terahertz application system, a front end of a receiver must have characteristics of broadband and low noise coefficient so as to ensure high sensitivity of the system. However, the terahertz frequency band low noise amplifier is difficult to implement, and therefore a mixer is generally used as the first stage of the terahertz receiver.
In the fundamental wave mixer, the local oscillation signal needs to be provided by a terahertz frequency source, the manufacturing difficulty is high, the cost is high, and the implementation is more difficult than that of the mixer, while the harmonic mixer can reduce the frequency of the required local oscillation signal to 1/N (N is the harmonic frequency) of the fundamental wave frequency, the implementation difficulty of the local oscillation signal is reduced, and the isolation of the local oscillation and the radio frequency port is enhanced, so that the harmonic mixer is usually adopted at the front end of the terahertz receiver. At present, the research on terahertz frequency band harmonic mixers is mostly concentrated on even harmonic mixers, and the reports on odd harmonic mixers, particularly third harmonic mixers, are less. Due to the special structural requirements of the odd harmonic mixer, the balanced diode pair is usually positioned in a waveguide at a radio frequency end or a local oscillation end, and due to the reasons of high matching difficulty, high processing technology requirement and the like, the structure and the design scheme of the odd harmonic mixer at a lower frequency band are difficult to apply to a terahertz frequency band, the terahertz frequency band is usually subjected to impedance matching by adopting modes such as waveguide gradual change, fin line transition and the like at present, but the problems of large size, insufficient bandwidth, excessive loss and the like are usually existed.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides the terahertz broadband third harmonic mixer which is small in size, reduces loss and increases effective bandwidth.
The present invention achieves the above-described object by the following technical means.
A terahertz broadband third harmonic mixer comprises a mixer circuit substrate, a metal cavity and a Schottky diode; the metal cavity comprises a radio frequency end waveguide and a local oscillator end waveguide;
the frequency mixer circuit substrate is provided with a waveguide-suspended strip line-microstrip transition structure, an open line stub, an intermediate frequency low-pass filter and a fan-shaped probe;
the waveguide-suspended strip line-microstrip transition structure comprises a triangular window, a suspended strip line and a microstrip line, wherein the triangular window is positioned on the back side of the mixer circuit substrate, and the vertex position of the triangular window is aligned with the center of a Schottky diode on the front side of the mixer circuit substrate;
the Schottky diode is provided with three welding feet D1, D2 and D3, and the middle welding foot D3 is fixed on a welding pad at the position of the suspension strip line;
the suspension strip line is connected with the inverted T-shaped microstrip line, and the microstrip line is connected with the open-circuit line branch section close to the suspension strip line in the horizontal direction;
the tail end of the microstrip line close to the local oscillator end waveguide in the horizontal direction is connected with a fan-shaped probe, and the fan-shaped probe is positioned inside the local oscillator end waveguide;
the microstrip line is connected with an intermediate-frequency low-pass filter in the vertical direction, and the intermediate-frequency low-pass filter consists of two stages of same CMRC units;
the waveguide-suspended strip line-microstrip transition structure, the Schottky diode and the suspended strip line are all located inside the radio frequency end waveguide.
Preferably, a plurality of grounding through holes are processed on the outer edge of the triangular window towards the waveguide direction of the local oscillation end.
Preferably, the solder tail D1 and the solder tail D2 are fixed on the solder pad at the two-side ground through hole.
Preferably, a metal floor is further arranged on the mixer circuit substrate; on the front surface of the mixer substrate, a metal floor covers the grounding through hole and the position nearby the grounding through hole; on the reverse side of the mixer circuit substrate, a metal floor is laid to cover the positions except the triangular window and the fan-shaped probe; the grounding through hole is communicated with metal floors on the front side and the back side of the mixer circuit substrate.
Preferably, the open-circuit path branches comprise four open-circuit paths, and the four open-circuit paths are connected to two sides of the microstrip line in a pairwise opposite mode.
Preferably, the length of the open line is one twelfth of the wavelength of the local oscillation signal.
Preferably, the tail end of the microstrip line in the vertical direction is connected with a microstrip line at the intermediate frequency end, and the impedance of the microstrip line at the intermediate frequency end is 50 Ω.
Preferably, the intermediate frequency low pass filter consists of two identical stages of CMRC units.
Preferably, the distance from the Schottky diode to the short-circuit surface of the radio-frequency end waveguide is lambdaRF，TE10/4, where λRF，TE10Is the radio frequency signal wavelength.
Preferably, the size of the radio frequency end waveguide meets the WR06 standard, and the size of the local oscillator end waveguide meets the WR19 standard.
By adopting the technical scheme, compared with the prior art, the invention has the following advantages:
(1) the third harmonic mixer adopts a waveguide-suspended strip line-microstrip transition structure, and simultaneously realizes two functions: performing broadband transition of a waveguide and a suspension strip line structure in a radio frequency band, and performing broadband transition of the suspension strip line and a micro-strip line structure in a local oscillator frequency band; the loss caused by mismatch is reduced, the effective bandwidth is increased, the size is small, the processing is easy, the cost is low, and the total length is only one wavelength of the radio-frequency signal.
(2) The third harmonic mixer adopts a waveguide-suspended strip line-microstrip transition structure, and the grounding through holes on two sides of the third harmonic mixer are close to the grounding welding feet of the Schottky diodes, so that good radio frequency and direct current grounding is provided, parasitic effect and energy loss caused by a redundant grounding structure are avoided, and the frequency conversion loss of the mixer is further reduced.
(3) The invention fully utilizes the series double Schottky junctions in the single Schottky diode chip, and uses the single chip to form a balanced diode pair structure, thereby reducing the relative position deviation between the diode pair and the waveguide-suspended strip line-microstrip transition structure and being beneficial to ensuring the consistency of batch assembly.
Drawings
FIG. 1 is a schematic structural diagram of a terahertz broadband third harmonic mixer according to the present invention;
fig. 2 is a schematic diagram of a waveguide-suspended strip line-microstrip transition structure according to the present invention, fig. 2(a) is a front view of the waveguide-suspended strip line-microstrip transition structure according to the present invention, and fig. 2(b) is a back view of the waveguide-suspended strip line-microstrip transition structure according to the present invention;
FIG. 3 is a schematic diagram illustrating the direction change of an electric field when a radio frequency signal and a local oscillator signal are transmitted according to the present invention; fig. 3(a) is a schematic diagram of a change in an electric field direction when a radio frequency signal is transmitted from a radio frequency end waveguide to a schottky diode in the present invention, and fig. 3(b) is a schematic diagram of a change in an electric field direction when a local oscillation signal is transmitted from a microstrip line to a schottky diode in the present invention;
FIG. 4 is a schematic diagram of a simulation curve of frequency conversion loss according to the present invention;
wherein: the system comprises a 1-radio frequency end waveguide, a 2-waveguide-suspension strip line-microstrip transition structure, a 3-Schottky diode, a 4-grounding through hole, a 5-suspension strip line, a 6-open line branch, a 7-metal ground, an 8-intermediate frequency low-pass filter, a 9-intermediate frequency end microstrip line, a 10-fan-shaped probe, an 11-local oscillator end waveguide and a 12-microstrip line.
Detailed Description
The invention will be further described with reference to the following figures and specific examples, but the scope of the invention is not limited thereto.
As shown in fig. 1, the terahertz broadband third harmonic mixer of the present invention is composed of a mixer circuit substrate, a metal cavity for placing the circuit substrate, and a schottky diode 3, wherein the mixer circuit substrate is provided with a waveguide-suspended strip line-microstrip transition structure 2, a ground via 4, a suspended strip 5, an open-line branch 6, a metal ground 7, an intermediate frequency low pass filter 8, an intermediate frequency end microstrip line 9, a fan-shaped probe 10, and a microstrip line 12, and the metal cavity for placing the circuit substrate includes a radio frequency end waveguide 1 and a local oscillator end waveguide 11.
As shown in fig. 2(a), (b), the waveguide-suspended strip line-microstrip transition structure 2 includes a section of triangular window, a suspended strip line 5 and a microstrip line 12, wherein the triangular window is located on the back side of the mixer circuit substrate, and the vertex position is aligned with the center of the schottky diode 3 on the front side of the mixer circuit substrate; a plurality of grounding through holes 4 are processed at the outer edge of the triangular window towards the direction of the local oscillator end waveguide 11; the metal floor 7 covers the grounding through hole 4 and the position near the grounding through hole on the front surface of the mixer substrate, and covers the triangular window and the position except the fan-shaped probe 10 on the back surface of the mixer circuit substrate; the grounding through hole 4 is communicated with metal ground 7 on the front side and the back side of the circuit substrate of the frequency mixer; in this embodiment, the metal flooring 7 is preferably made of copper.
As shown in fig. 2(a), the schottky diode 3 has three solder legs of D1, D2 and D3 in common, the middle solder leg D3 is a solder leg shared by double schottky junctions and corresponds to a pad at the suspension strip line 5, and the solder leg D3 is adhered to the pad at the suspension strip line 5 through a conductive adhesive; and the welding leg D1 and the welding leg D2 at two ends of the diode respectively correspond to the welding pads at the grounding through holes 4 at two sides, and the welding leg D1 and the welding leg D2 are adhered to the welding pads at the grounding through holes 4 at two sides through conductive adhesive. The double Schottky junctions are in-phase series connection relative to the radio frequency signals and in anti-phase parallel connection relative to the local oscillator signals and the intermediate frequency signals, so that one Schottky junction is driven by the radio frequency and the local oscillator signals in phase, and the other Schottky junction is driven by the radio frequency and the local oscillator signals in anti-phase, thereby forming a balanced diode pair structure and outputting the intermediate frequency signals. The grounding through hole 4 is close to the welding feet D1 and D2 at the two ends of the Schottky diode 3, so that good radio frequency and direct current grounding is formed, and redundant branches are prevented from being added.
The suspension strip line 5 is connected with an inverted T-shaped microstrip line 12, the microstrip line 12 is connected with an open-circuit line branch 6 at a position close to the suspension strip line 5 in the horizontal direction, as shown in fig. 1, the open-circuit line branch 6 includes four open-circuit lines, and the open-circuit lines are connected to two sides of the microstrip line 12 in a pairwise opposite manner. When the radio frequency signal is transmitted to the schottky diode 3 from the radio frequency end waveguide 1, a part of the radio frequency signal is continuously transmitted and leaked to the local oscillator and the intermediate frequency port, and the leaked part of the radio frequency signal can be reflected to the schottky diode 3, so that the energy loss is avoided, and the port isolation is improved. The length of each open line is one fourth of the wavelength of the radio frequency signal, namely one twelfth of the wavelength of the local oscillator signal (lambda)LO，TEMAnd 12), the local oscillator signal is slightly influenced, and the impedance matching of the local oscillator frequency band is carried out by adjusting the line width and the space and assisting other circuit structures (the waveguide-suspension strip line-microstrip transition structure 2, the suspension strip 5, the intermediate frequency low-pass filter 8, the intermediate frequency end microstrip line 9 and the fan-shaped probe 10). The local oscillator signal frequency is located in the cut-off frequency band of the radio frequency end waveguide 1, so that the isolation from the local oscillator signal to the radio frequency end can be ensured.
The end of the microstrip line 12 close to the local oscillation end waveguide 11 in the horizontal direction is connected with a fan-shaped probe 10, the fan-shaped probe 10 is located inside the local oscillation end waveguide 11, and a mixer circuit substrate containing the fan-shaped probe 10 is fixed with the local oscillation end waveguide 11 through conductive adhesive. The local oscillation signal is input from the local oscillation end waveguide 11, transited to the microstrip line 12 by the fan-shaped probe 10, and transmitted to the schottky diode 3.
The microstrip line 12 is connected with an intermediate frequency low pass filter 8 and an intermediate frequency end microstrip line 9 in sequence in the vertical direction, and the intermediate frequency end microstrip line 9 is located at the tail end of the microstrip line 12 in the vertical direction. The intermediate frequency low pass filter 8 is composed of two stages of identical CMRC (compact microstrip resonance) units, and the two stages are cascaded to enhance the suppression of local oscillator signals and radio frequency signals.
The waveguide-suspended strip line-microstrip transition structure 2, the Schottky diode 3 and the suspended strip line 5 are all positioned in the radio frequency end waveguide 1, and a mixer circuit substrate comprising the waveguide-suspended strip line-microstrip transition structure 2, the Schottky diode 3 and the suspended strip line 5 is fixed with the radio frequency end waveguide 1 through conductive adhesive. In this embodiment, the distance from the schottky diode 3 to the short-circuited surface of the rf end waveguide 1 is λRF，TE10/4 (where λ)RF，TE10The wavelength of the radio frequency signal) to ensure that the diode is positioned at the position with the maximum electric field intensity of the radio frequency signal, and the loss of the radio frequency signal is reduced.
Preferably, in this embodiment, the size of the radio frequency end waveguide 1 meets the WR06 standard, the size of the local oscillator end waveguide 11 meets the WR19 standard, and the impedance of the intermediate frequency end microstrip line 9 is 50 Ω.
As shown in fig. 3(a), a radio frequency signal is transmitted from a radio frequency end standard waveguide 1 to a waveguide-suspended strip line-microstrip transition structure 2, and finally reaches a schottky diode 3, and in the process, the electric field direction of the radio frequency signal is kept unchanged; as shown in fig. 3 b, the local oscillation signal is transmitted from the microstrip line 12 to the schottky diode 3, and in this process, the local oscillation signal is always in the quasi-TEM mode (transverse electromagnetic mode). In the transmission process of the radio frequency signal and the local oscillator signal, mode change and energy waste are avoided, frequency conversion loss is reduced, and the working bandwidth is effectively improved. Radio frequency signals and local oscillation signals are loaded on the Schottky diode 3, nonlinear frequency mixing is carried out by the Schottky diode 3, and required intermediate frequency signals are extracted from an intermediate frequency port through impedance matching and filtering.
The method comprises the following steps of constructing an overall simulation model of the mixer, and specifically implementing the steps of: (1) considering parasitic effects introduced by the diode packaging size, establishing a three-dimensional electromagnetic model of the Schottky diode 3 in three-dimensional electronic simulation software (such as HFSS); (2) in three-dimensional electronic simulation software, establishing three-dimensional electromagnetic models of passive circuits such as a fan-shaped probe 10, a medium-frequency low-pass filter 8, an open-circuit branch 6 and the like, and performing primary simulation, wherein the material of a circuit substrate of the frequency mixer is set to be Rogers5880, and the thickness of the circuit substrate is 0.127 mm; (3) establishing a complete three-dimensional electromagnetic model of a passive part of a mixer in three-dimensional electronic simulation software by using a three-dimensional electromagnetic model of a Schottky diode 3 and a three-dimensional electromagnetic model of a passive circuit; (4) deriving a simulation result of a complete three-dimensional electromagnetic model of a passive part of a mixer from three-dimensional electronic simulation software to obtain an SNP file; (5) introducing the SNP file into circuit level simulation software (ADS) to form a multi-port model, cascading with a diode SPICE model which embodies the nonlinear characteristic of a Schottky diode 3 to form an integral simulation model of the frequency mixer, and simulating by using a harmonic balance method to obtain the frequency conversion loss of the frequency mixer; (6) the optimal result of the frequency conversion loss in the broadband range is obtained by adjusting the size of the waveguide-suspended strip line-microstrip transition structure 2 and optimizing the matching branches.
In the embodiment, the total length of the waveguide-suspended strip line-microstrip transition structure 2 is set to be 12mm, the length of each open line is set to be 0.32mm, and the length of the CMRC unit is 1.40 mm; according to the steps (4) - (6), the overall structure of the mixer is simulated, and the simulation result is shown in fig. 4. As can be seen from the figure, when the local oscillator power is 14dBm, the frequency conversion loss of the mixer is not more than 14.5dB in the range of 135 plus 165GHz, and the frequency conversion loss of the mixer is 11.5 +/-0.7 dB in the range of 140 plus 160 GHz. Compared with the prior art, the terahertz broadband third harmonic mixer has the advantages that the waveguide-suspended strip line-microstrip transition structure is adopted, the variable frequency loss is improved, the working bandwidth is increased, the structure is more compact compared with the traditional method for changing the waveguide size or the fin line transition, and the processing difficulty and tolerance requirements are reduced.
The present invention is not limited to the above-described embodiments, and any obvious improvements, substitutions or modifications can be made by those skilled in the art without departing from the spirit of the present invention.
Claims (10)
1. A terahertz broadband third harmonic mixer is characterized by comprising a mixer circuit substrate, a metal cavity and a Schottky diode (3); the metal cavity comprises a radio frequency end waveguide (1) and a local oscillator end waveguide (11);
the mixer circuit substrate is provided with a waveguide-suspended strip line-microstrip transition structure (2), an open line branch (6), an intermediate frequency low-pass filter (8) and a fan-shaped probe (10);
the waveguide-suspended strip line-microstrip transition structure (2) comprises a triangular window, a suspended strip line (5) and a microstrip line (12), wherein the triangular window is positioned on the back surface of the mixer circuit substrate, and the vertex position of the triangular window is aligned with the center of a Schottky diode (3) on the front surface of the mixer circuit substrate;
the Schottky diode (3) is provided with three welding feet D1, D2 and D3, and the middle welding foot D3 is fixed on a welding pad at the position of the suspension strip line (5);
the suspension strip line (5) is connected with an inverted T-shaped microstrip line (12), and the microstrip line (12) is connected with an open-circuit branch (6) at a position close to the suspension strip line (5) in the horizontal direction;
the tail end of the microstrip line (12) close to the local oscillator end waveguide (11) in the horizontal direction is connected with a fan-shaped probe (10), and the fan-shaped probe (10) is located inside the local oscillator end waveguide (11);
the microstrip line (12) is connected with an intermediate-frequency low-pass filter (8) in the vertical direction, and the intermediate-frequency low-pass filter (8) consists of two stages of same CMRC units;
the waveguide-suspended strip line-microstrip transition structure (2), the Schottky diode (3) and the suspended strip line (5) are all located inside the radio frequency end waveguide (1).
2. The terahertz broadband third harmonic mixer according to claim 1, wherein a plurality of ground through holes (4) are formed in the triangular window at the outer edge towards the direction of the local oscillator end waveguide (11).
3. The terahertz broadband third harmonic mixer according to claim 2, wherein the solder tails D1 and D2 are fixed on the pads at the two-side ground vias (4).
4. The terahertz broadband third harmonic mixer according to claim 3, wherein a metal ground (7) is further provided on the mixer circuit substrate; on the front surface of the mixer substrate, a metal floor (7) covers the grounding through hole (4) and the position nearby the grounding through hole; on the reverse side of the mixer circuit substrate, a metal floor (7) covers the triangular window and the position outside the fan-shaped probe (10); the grounding through hole (4) is communicated with metal flooring (7) on the front side and the back side of the mixer circuit substrate.
5. The terahertz broadband third harmonic mixer according to claim 1, wherein the open-line stub (6) comprises four open-line lines, and the open-line lines are connected to two sides of the microstrip line (12) in a manner of being opposite to each other.
6. The terahertz broadband third harmonic mixer of claim 5, wherein the open line has a length of one twelfth of a wavelength of the local oscillator signal.
7. The terahertz broadband third harmonic mixer according to claim 1, wherein the microstrip line (12) is vertically connected to an intermediate frequency end microstrip line (9), and an impedance of the intermediate frequency end microstrip line (9) is 50 Ω.
8. The terahertz broadband third harmonic mixer according to claim 1, characterized in that the intermediate frequency low pass filter (8) is composed of two identical stages of CMRC units.
9. The terahertz broadband third harmonic mixer according to claim 1, wherein the short-circuit surface distance from the schottky diode (3) to the radio frequency end waveguide (1) is λRF，TE10/4, where λRF，TE10Is the wavelength of the radio frequency signal。
10. The terahertz broadband third harmonic mixer according to claim 1, wherein the size of the radio frequency end waveguide (1) meets the WR06 standard, and the size of the local oscillator end waveguide (11) meets the WR19 standard.
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Cited By (1)
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| CN115051651A (en) * | 2022-08-11 | 2022-09-13 | 壹新信通科技(成都)有限公司 | Terahertz frequency doubling Schottky diode structure, frequency multiplier and electronic equipment |
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| CN115051651A (en) * | 2022-08-11 | 2022-09-13 | 壹新信通科技(成都)有限公司 | Terahertz frequency doubling Schottky diode structure, frequency multiplier and electronic equipment |
| CN115051651B (en) * | 2022-08-11 | 2022-11-01 | 壹新信通科技(成都)有限公司 | Terahertz frequency multiplication Schottky diode structure, frequency multiplier and electronic equipment |
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