CN113572430A - Solid terahertz monolithic second harmonic mixer circuit - Google Patents
Solid terahertz monolithic second harmonic mixer circuit Download PDFInfo
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- CN113572430A CN113572430A CN202110849039.0A CN202110849039A CN113572430A CN 113572430 A CN113572430 A CN 113572430A CN 202110849039 A CN202110849039 A CN 202110849039A CN 113572430 A CN113572430 A CN 113572430A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
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Abstract
The invention provides a solid terahertz monolithic second harmonic mixer circuit, which comprises a radio frequency input waveguide, a local oscillator input waveguide and a monolithic substrate; a radio frequency input waveguide coupling probe, a Schottky barrier diode, a local oscillator low-pass filter, a local oscillator coupling probe and an intermediate frequency low-pass filter are integrated on the single chip circuit substrate; the radio frequency coupling probe, the Schottky barrier diode, the local oscillator low-pass filter, the local oscillator coupling probe and the intermediate frequency low-pass filter are connected in sequence through a metal strip line; the monolithic circuit substrate is fixed with cavities of the radio frequency input waveguide and the local oscillator input waveguide in a beam lead mode; the radio frequency input end of the monolithic substrate is provided with a radio frequency ground, and the radio frequency ground is connected with the radio frequency end cavity through a radio frequency ground probe; the intermediate frequency signal output end of the single chip circuit substrate is provided with an intermediate frequency connection SMA probe, and the intermediate frequency connection SMA probe is connected with the SMA. The terahertz device is suitable for designing terahertz devices with extremely small channel sizes.
Description
Technical Field
The invention belongs to the field of terahertz solid-state monolithic circuit devices, and particularly relates to a solid terahertz monolithic second harmonic mixer circuit.
Background
Terahertz waves are part of the electromagnetic spectrum, ranging in wavelength from 3mm to 30 μm, corresponding to frequencies ranging from 100GHz to 10THz, including a portion of millimeter waves (30-300 GHz), the entire sub-millimeter wave band, and the low end of infrared waves (from 3THz to visible light). It is between the two relatively mature frequency spectrums (microwave and light wave), and the terahertz scientific technology is still in a relatively immature field, both in research and application, and the research on this field is less, so this band is also called "THz gap".
Due to the limitation of the process and the lack of the terahertz source, the research on devices and systems of the terahertz higher frequency band is less, and further development and research are needed. The terahertz higher frequency band has the characteristic of wide frequency band and is suitable for communication, wherein the frequency band of 1.03THz is a relatively wide atmospheric window and is suitable for short-distance high-speed communication and inter-satellite secret communication in future interplanetary detection. The terahertz related field is more and more deeply explored, and the research of terahertz devices is continuously developed to higher frequency and better performance. At present, the design process of the terahertz high-frequency band device has a lot of restriction factors and relatively few researches.
With the gradual increase of the working frequency, the working wavelength is shorter and shorter, and the influence of the processing error and the installation deviation on the performance of the device is larger. The design of discrete devices is increasingly constrained by the errors introduced by the various components, and the performance of monolithic circuits is much better than discrete devices. The monolithic circuit can improve the design integration level and reduce errors introduced in the installation process as much as possible, so that the performance of the terahertz frequency band device is more stably realized. Therefore, the design and processing environment of the monolithic circuit in the terahertz higher frequency band are important. The development of the monolithic circuit promotes the design of the terahertz frequency band device and the establishment of a system, and the realization and the performance improvement of the terahertz frequency band device play an important role in exploring terahertz science.
The development of a domestic semiconductor integrated circuit production line can meet the requirement of processing a terahertz frequency band monolithic circuit, the thickness of a substrate of about 10 mu m can be realized by a monolithic process based on a GaAs substrate, and the loss caused by a dielectric substrate is reduced to a great extent. Meanwhile, the diameter of the anode junction of the Schottky barrier diode also realizes the process condition of less than 1 mu m, and the design of the terahertz higher frequency band device can be realized. With the rapid development of the monolithic technology, the domestic production line conditions can meet the size requirements of the terahertz circuit.
Disclosure of Invention
The invention aims to provide a monolithic second harmonic mixer circuit applied to a terahertz frequency band, which can effectively solve the problems of position error and low yield caused by installation of a discrete Schottky barrier diode.
In order to achieve the purpose, the invention adopts the following technical scheme:
a solid terahertz monolithic second harmonic mixer circuit comprises a radio frequency input waveguide, a local oscillator input waveguide and a monolithic substrate; a radio frequency input waveguide coupling probe, a Schottky barrier diode, a local oscillator low-pass filter, a local oscillator coupling probe and an intermediate frequency low-pass filter are integrated on the single chip circuit substrate;
the radio frequency coupling probe, the Schottky barrier diode, the local oscillator low-pass filter, the local oscillator coupling probe and the intermediate frequency low-pass filter are connected in sequence through a metal strip line;
the monolithic circuit substrate is fixed with cavities of the radio frequency input waveguide and the local oscillator input waveguide in a beam lead mode; the radio frequency input end of the monolithic substrate is provided with a radio frequency ground, and the radio frequency ground is connected with the radio frequency end cavity through a radio frequency ground probe; the intermediate frequency signal output end of the single chip circuit substrate is provided with an intermediate frequency connection SMA probe, and the intermediate frequency connection SMA probe is connected with the SMA.
The signal of the radio frequency input waveguide and the signal of the local oscillator input waveguide form signal isolation from a radio frequency end to a local oscillator end through a local oscillator low-pass filter, and the waveguide cavity forms signal isolation from the local oscillator end to the radio frequency end.
The Schottky barrier diode adopts a GaAs-based reverse parallel Schottky barrier diode and directly grows on the monolithic substrate, and the two finger bridges are in reverse parallel connection.
And the lead circuit in the beam lead mode is coated with conductive adhesive and connected with the cavity of the mixer.
A terahertz monolithic second harmonic mixer circuit comprises a radio frequency input waveguide, a local oscillator input waveguide and a monolithic substrate. The monolithic circuit substrate integrates a radio frequency coupling probe, a local oscillator low-pass filter, an intermediate frequency low-pass filter, an inverse parallel Schottky barrier diode and a matching circuit structure.
The radio frequency input end of the terahertz monolithic second harmonic mixer circuit is bonded with the metal cavity of the mixer, and the intermediate frequency signal output end is connected with the SMA output end in a gluing mode.
The radio frequency grounding probe of the single-chip second harmonic mixer circuit is bonded with any position of the metal cavity of the mixer.
The invention provides a terahertz solid-state monolithic second harmonic mixer based on a beam lead form, which adopts III-V group element GaAs as a medium substrate.
The reverse parallel Schottky barrier diode is directly grown on the GaAs medium substrate, and is not connected in the whole circuit through conductive adhesive. The diode structure is directly grown on the dielectric substrate, so that the position of the diode relative to the circuit can be determined, the size of the diode is smaller, and the yield is higher. Meanwhile, the circuit is fixed in the cavity in a beam lead mode, and compared with a traditional suspension microstrip line mode, the influence of the conductive adhesive on the circuit is smaller, and the terahertz device is more suitable for designing a terahertz device with an extremely small channel size. The terahertz monolithic circuit structure solves the problem of assembly errors caused by too small terahertz devices to a great extent, so that the terahertz circuit can be realized. With the development of terahertz frequency bands deepening more and more, the terahertz monolithic circuit becomes an important mode for realizing the establishment of terahertz devices and systems.
Drawings
FIG. 1 is a circuit structure diagram of a solid terahertz monolithic second harmonic mixer circuit according to the present invention;
FIG. 2 is a top view of FIG. 1;
FIG. 3 is a diagram of an arrangement of antiparallel Schottky barrier diodes in the circuit of the present invention;
FIG. 4 is a diagram of the RF input terminal of the circuit of the present invention;
FIG. 5 is a diagram of the connection of the IF signal output terminal in the circuit of the present invention;
FIG. 6 is a structural diagram of a monolithic substrate according to the present invention;
FIG. 7 is a graph of simulation results for a monolithic second harmonic mixer;
reference numerals:
1. a radio frequency input waveguide; 2. inputting a local oscillator into the waveguide; 3. a radio frequency coupling probe; 4. coupling a probe by a local oscillator; 5. a Schottky barrier diode; 6. a local oscillator low-pass filter; 7. an intermediate frequency low pass filter; 8. a GaAs dielectric substrate; 9. radio frequency grounding; 10. a planar circuit cavity; 11. a beam lead; 12. schottky barrier diode pad 1; 13. schottky barrier diode pad 2; 14. a Schottky barrier diode finger; 15. a radio frequency ground probe; 16. and connecting the SMA probe at the intermediate frequency.
Detailed Description
The invention is described in further detail below with reference to the figures and the detailed description.
Example 1
As shown in fig. 1 to 6, a solid-state terahertz monolithic second harmonic mixer circuit includes a radio frequency input waveguide 1, a local oscillator input waveguide 2, and a monolithic substrate; a radio frequency input waveguide coupling probe 3, a Schottky barrier diode 5, a local oscillator low-pass filter 6, a local oscillator coupling probe 4 and an intermediate frequency low-pass filter 7 are integrated on the single chip circuit substrate;
the radio frequency coupling probe 3, the Schottky barrier diode 5, the local oscillator low-pass filter 6, the local oscillator coupling probe 4 and the intermediate frequency low-pass filter 7 are connected through a metal strip line in sequence;
the monolithic circuit substrate is fixed with the cavities of the radio frequency input waveguide 1 and the local oscillator input waveguide 2 in a beam lead mode; the radio frequency input end of the monolithic substrate is provided with a radio frequency ground 9, and the radio frequency ground 9 is connected with the radio frequency end cavity through a radio frequency ground probe 15; an intermediate frequency connection SMA probe 16 is arranged at an intermediate frequency signal output end of the monolithic substrate, and the intermediate frequency connection SMA probe 16 is connected with the SMA.
The signal of the radio frequency input waveguide and the signal of the local oscillator input waveguide form signal isolation from a radio frequency end to a local oscillator end through a local oscillator low-pass filter, and the radio frequency waveguide cavity forms signal isolation from the local oscillator end to the radio frequency end.
The Schottky barrier diode adopts a GaAs-based reverse parallel Schottky barrier diode and directly grows on the monolithic substrate, and the two finger bridges are in reverse parallel connection.
And the lead circuit in the beam lead mode is coated with conductive adhesive and connected with the cavity of the mixer.
The present embodiment is a 1THz monolithic second harmonic mixer, and its circuit structure is shown in fig. 1, and mainly includes a local oscillator input waveguide 2, a radio frequency input waveguide 1, a GaAs dielectric substrate 8, a planar circuit cavity 10, a radio frequency ground 9, a local oscillator low-pass filter 6, an intermediate frequency low-pass filter circuit 7, a schottky barrier diode 5, and a beam lead 11.
In this embodiment, the planar circuit cavity 10 is a rectangular cavity with a middle height as shown in fig. 1, and forms a part of the circuit structure.
The metal cavity of the mixer comprises a waveguide cavity, a circuit cavity and the like.
As shown in fig. 1, the rf input waveguide is a WR0.8 standard rectangular waveguide, the cross-sectional dimension is 0.203mm by 0.102mm, and the rf coupling probe structure is in the form of an E-plane probe. The local oscillator input waveguide adopts WR1.9 standard rectangular waveguide, the cross section size is 0.483mm x 0.241mm, and the cross section size of the local oscillator input waveguide after being subjected to height reduction is 0.483mm x 0.15 mm.
The reverse parallel Schottky barrier diode directly grows on the dielectric substrate, manual installation is not needed again, and errors caused in the installation process can be effectively avoided. The factors such as the size of the diode, the thickness of the dielectric substrate and the like can be effectively reduced, and the limitation of the operation space can not be generated. The beam lead structure is connected with the cavity through the conductive adhesive to replace the installation of a strip line structure, so that the design space of a circuit structure can be effectively improved.
A top view of the THz monolithic second harmonic mixer circuit of this embodiment 1 is shown in fig. 2. Making the information in fig. 1 more complete and clear.
As shown in fig. 3, the reverse parallel schottky barrier diode 5 in the monolithic second harmonic mixing circuit is realized by growing on a GaAs dielectric substrate 8. The GaAs dielectric substrate 8 is about 15 μm thick and serves as a dielectric substrate of the antiparallel schottky barrier diode.
As shown in fig. 4, the rf ground 9 in the monolithic second harmonic mixer is connected to the cavity by the rf ground probe 15 through conductive adhesive.
As shown in FIG. 5, the output end intermediate frequency low pass filter 7 in the monolithic second harmonic mixing circuit is connected with an intermediate frequency connection SMA probe 16 and SMA by conductive adhesive.
As shown in fig. 6, the monolithic second harmonic mixing circuit dielectric substrate is GaAs, and includes an antiparallel schottky barrier diode 5, a local oscillator coupling probe 4, a radio frequency coupling probe 3, and an intermediate frequency low pass filter circuit 7. The thickness of the GaAs medium substrate is 15 mu m, a strip line of a growing gold material is adopted as a circuit structure on the front side, and the thickness of gold is 2 mu m.
According to the invention, the reverse parallel Schottky barrier diode is grown on the GaAs dielectric substrate, so that the accuracy of the diode relative to the position in a circuit can be effectively improved. In this embodiment, the design of the 1THz monolithic second harmonic mixer is completed based on a GaAs monolithic process line. The reverse parallel schottky barrier diode is designed as a core, and the structure is as shown in fig. 3, and the schottky barrier diode fingers 14 between the schottky barrier diode pad 112 and the schottky barrier diode pad 213 are arranged in reverse parallel.
The simulation result of the 1THz monolithic second harmonic mixer of this embodiment is shown in fig. 7, the abscissa shown in fig. 7 is the radio frequency signal frequency (unit: THz), the ordinate is the single-sideband frequency conversion loss (unit: dB), the harmonic balance method is adopted in the simulation design, the radio frequency signal frequency f1 is 0.98-1.04THz, the local oscillator signal frequency f2 is 1.02THz, the radio frequency signal power is-20 dBm, and the local oscillator signal power is 6 mW. In the range of 0.985-1.035THz, the single sideband frequency conversion loss of the mixer is better than-10 dB, and the optimal single sideband conversion loss is-7.5 dB. The single sideband conversion loss is defined as the ratio of the output power of the intermediate frequency signal to the power of the radio frequency input signal.
The method can be realized by upper and lower limit values and interval values of intervals of process parameters (such as temperature, time and the like), and embodiments are not listed.
Conventional technical knowledge in the art can be used for the details which are not described in the present invention.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and are not limited. Although the present invention has been described in detail with reference to the embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (4)
1. A solid terahertz monolithic second harmonic mixer circuit is characterized by comprising a radio frequency input waveguide, a local oscillator input waveguide and a monolithic substrate; a radio frequency input waveguide coupling probe, a Schottky barrier diode, a local oscillator low-pass filter, a local oscillator coupling probe and an intermediate frequency low-pass filter are integrated on the single chip circuit substrate;
the radio frequency coupling probe, the Schottky barrier diode, the local oscillator low-pass filter, the local oscillator coupling probe and the intermediate frequency low-pass filter are connected in sequence through a metal strip line;
the monolithic circuit substrate is fixed with cavities of the radio frequency input waveguide and the local oscillator input waveguide in a beam lead mode; the radio frequency input end of the monolithic substrate is provided with a radio frequency ground, and the radio frequency ground is connected with the radio frequency end cavity through a radio frequency ground probe; the intermediate frequency signal output end of the single chip circuit substrate is provided with an intermediate frequency connection SMA probe, and the intermediate frequency connection SMA probe is connected with the SMA.
2. The solid-state terahertz monolithic second harmonic mixer circuit of claim 1, wherein the signal of the radio frequency input waveguide and the signal of the local oscillator input waveguide are isolated from a radio frequency end to a local oscillator end by a local oscillator low pass filter, and the cavity of the radio frequency waveguide is isolated from the local oscillator end to the radio frequency end.
3. The solid-state terahertz monolithic second harmonic mixer circuit of claim 1, wherein the schottky barrier diode is a GaAs based antiparallel schottky barrier diode grown directly on the monolithic substrate, the two finger bridges being in antiparallel relationship.
4. The solid-state terahertz monolithic second harmonic mixer circuit of claim 1, wherein the beam lead wire mode lead wire circuit is coated with conductive adhesive and connected with cavities of the radio frequency input waveguide and the local oscillator input waveguide.
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| CN202110849039.0A CN113572430A (en) | 2021-07-27 | 2021-07-27 | Solid terahertz monolithic second harmonic mixer circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114421106A (en) * | 2022-01-17 | 2022-04-29 | 电子科技大学 | Small-size low-loss terahertz transceiving front-end multilayer integrated packaging structure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104467681A (en) * | 2014-11-06 | 2015-03-25 | 电子科技大学 | Terahertz subharmonic frequency multiplication and mixing device based on monolithic integrated circuit |
| CN111030600A (en) * | 2018-10-09 | 2020-04-17 | 中国科学院国家空间科学中心 | Active bias terahertz harmonic mixer |
| CN111371410A (en) * | 2018-12-25 | 2020-07-03 | 中国科学院国家空间科学中心 | Terahertz quartic harmonic mixer |
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2021
- 2021-07-27 CN CN202110849039.0A patent/CN113572430A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104467681A (en) * | 2014-11-06 | 2015-03-25 | 电子科技大学 | Terahertz subharmonic frequency multiplication and mixing device based on monolithic integrated circuit |
| CN111030600A (en) * | 2018-10-09 | 2020-04-17 | 中国科学院国家空间科学中心 | Active bias terahertz harmonic mixer |
| CN111371410A (en) * | 2018-12-25 | 2020-07-03 | 中国科学院国家空间科学中心 | Terahertz quartic harmonic mixer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114421106A (en) * | 2022-01-17 | 2022-04-29 | 电子科技大学 | Small-size low-loss terahertz transceiving front-end multilayer integrated packaging structure |
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