CN107342459B - Transition probe structure of thin-film microstrip antenna - Google Patents
Transition probe structure of thin-film microstrip antenna Download PDFInfo
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- CN107342459B CN107342459B CN201710541192.0A CN201710541192A CN107342459B CN 107342459 B CN107342459 B CN 107342459B CN 201710541192 A CN201710541192 A CN 201710541192A CN 107342459 B CN107342459 B CN 107342459B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/12—Hollow waveguides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
Abstract
The invention discloses a thin-film microstrip antenna transition probe structure, which comprises an upper cavity, a lower cavity and an antenna probe combination, wherein the upper cavity and the lower cavity are closed to form a rectangular input waveguide, a transition probe cavity and a rectangular output waveguide which are sequentially connected, a boss is arranged in the middle of the lower cavity, and the antenna probe combination is arranged on the boss; a single-chip circuit shielding cavity is formed between the upper cavity and the boss, electromagnetic signals are input from the rectangular input waveguide, and are output from the rectangular output waveguide after being processed by the antenna probe combination in the transition probe cavity. The transition probe structure of the thin-film microstrip antenna provided by the invention can greatly improve the transition performance of terahertz frequency band signals, is small and exquisite in structure, does not increase the volume of a chip, saves the space of a module, is simple and compact in structure and is convenient to manufacture.
Description
Technical Field
The invention belongs to the technical field of terahertz devices, and particularly relates to a transition probe structure of a thin-film microstrip antenna.
Background
The terahertz covers a wide spectrum range from 100GHz to 10THz, has a wavelength range of 3 mm-30 microns, and has some characteristics of microwave and infrared rays. Compared with microwave, the frequency spectrum range is wider, the information capacity is larger, and the method is suitable for high-speed large-capacity communication; the terahertz radiation has high signal-to-noise ratio and is suitable for high-quality imaging; the radiation energy is small, and the radiation energy can penetrate various organic and inorganic materials, so that the attenuation is small. The terahertz monolithic circuit comprises a terahertz amplifier, a frequency multiplier, a frequency mixer, a signal receiving and transmitting system and the like, and has important application prospects in the aspects of communication, radar, detection, radio astronomy and medicine.
In order to reduce the loss of electromagnetic wave energy in the process of converting the energy of the electromagnetic wave in different propagation modes as much as possible, a transition structure with precise design and good impedance matching of the transmission structure are required. The basic requirements for the transition structure are: low transmission loss and return loss, enough bandwidth, good repeatability and consistency, and convenient processing and manufacture due to the coordination design with a circuit. The monolithic circuit-waveguide transition structure is a key technology for butt joint of a system on a chip and a module, a traditional microwave monolithic circuit is mainly packaged by a gold wire jumper, great inductive discontinuity can be introduced in a terahertz frequency band in a jumper connection mode, the whole transition structure can show the characteristics of high loss and high reflection, and the high loss characteristic of the gold wire jumper in the terahertz frequency band influences the practicability of the terahertz monolithic circuit.
The sheet antenna type probe can avoid gold wire jumper connection, the existing transition structure is integrated with a coplanar waveguide circuit, signal wires and ground wires of the coplanar waveguide circuit are coplanar, and good dipole probe design is easy to realize. The other common and efficient terahertz on-chip transmission structure is a thin-film microstrip, a low-loss medium such as benzocyclobutene (BCB) is adopted in a thin-film microstrip process, at least two layers of metal are needed to be used as a microstrip line stratum and a signal layer respectively when a device layer is removed, compared with the traditional microstrip line structure, the thin-film microstrip on-chip transmission structure has the advantages that the very thin medium layer is obtained by adopting the thin-film process, the loss characteristic of the microstrip line in a terahertz frequency band can be effectively reduced, the thin-film microstrip on-chip transmission structure is an ideal transmission structure of a terahertz monolithic circuit, but a proper circuit-waveguide transition structure on.
Disclosure of Invention
The invention aims to solve the problems and provides a thin-film microstrip antenna transition probe structure which is suitable for a thin-film microstrip process terahertz monolithic circuit and has good performance.
In order to solve the technical problems, the technical scheme of the invention is as follows: a transition probe structure of a thin-film microstrip antenna comprises an upper cavity, a lower cavity and an antenna probe combination, wherein the upper cavity and the lower cavity are closed to form a rectangular input waveguide, a transition probe cavity and a rectangular output waveguide which are sequentially connected; the middle part of the lower cavity is provided with a boss, the antenna probe combination is arranged on the boss, a single-chip circuit shielding cavity is formed between the upper cavity and the boss, electromagnetic signals are input from the rectangular input waveguide, and are output from the rectangular output waveguide after being processed by the antenna probe combination in the transition probe cavity.
Preferably, the antenna probe combination comprises a thin film microstrip signal line metal layer, a thin film microstrip dielectric layer, a thin film microstrip ground metal layer and a monolithic substrate layer which are sequentially arranged from top to bottom; an antenna upper arm is arranged in the thin film micro-strip signal line metal layer, an antenna lower arm is arranged in the thin film micro-strip ground metal layer, and a metalized through hole is formed in the single chip circuit substrate layer.
Preferably, the lower arm of the antenna comprises a rectangular structure, the middle parts of two opposite sides of the rectangular structure are provided with a left lower bend and a right lower bend which are identical in structure, one end of the left lower bend and one end of the right lower bend are respectively connected with two sides of the rectangular structure, and the other end of the left lower bend and the other end of the right lower bend are parallel to each other and extend in opposite directions.
Preferably, the middle section of the upper arm of the antenna is provided with two antenna impedance matching branches with the same structure, and the middle section of the upper arm of the antenna is parallel to the axis of the cavity of the transition probe.
Preferably, the two ends of the upper arm of the antenna are provided with an upper left bend and an upper right bend, and the extending direction of the upper left bend is opposite to the extending direction of the upper right bend.
Preferably, the extending direction of the upper left bend is opposite to the extending direction of the lower left bend, and the extending direction of the upper right bend is opposite to the extending direction of the lower right bend.
Preferably, the bottom of the monolithic substrate layer is subjected to a back-gold process, and back gold is not arranged at positions corresponding to the upper left bend, the upper right bend, the lower left bend and the lower right bend in the antenna probe combination at the bottom of the monolithic substrate layer.
Preferably, the radiation direction of the antenna probe combination is the same as the axial direction of the transition probe cavity.
Preferably, the antenna probe combination is bonded with the lower cavity.
Preferably, the width of the transition probe cavity is greater than the width of the rectangular input waveguide and the rectangular output waveguide.
The invention has the beneficial effects that:
(1) the consistency of the transition probe structure of the thin-film microstrip antenna is superior to that of the traditional monolithic circuit jumper wire packaging transition structure, the transmission discontinuity of the traditional structure in the terahertz wave frequency band is eliminated, and the transition performance of terahertz frequency band signals is greatly improved.
(2) The transition probe structure of the film microstrip antenna is suitable for an on-chip circuit in the form of a film microstrip transmission line, and conversion between a microstrip transmission mode and a coplanar waveguide transmission mode is not required.
(3) The transition probe structure of the thin-film microstrip antenna is integrated with an on-chip circuit, the structure is small and exquisite, the size of a chip is not increased, and the space is saved.
(4) The thin film microstrip antenna has a simple and compact transition structure, and is convenient to design and manufacture according to the actual circuit condition.
Drawings
FIG. 1 is a schematic structural diagram of a thin-film microstrip transition antenna probe structure according to the present invention;
FIG. 2 is a schematic diagram of an upper cavity structure of a thin film microstrip transition antenna probe structure according to the present invention;
FIG. 3 is a schematic diagram of a thin film microstrip transition antenna probe structure of the present invention without an upper cavity and antenna probe assembly;
FIG. 4 is a schematic diagram of a thin-film microstrip transition antenna probe structure of the present invention without an upper cavity;
FIG. 5 is a schematic diagram of an antenna probe assembly structure of the thin film microstrip transition antenna probe structure of the present invention;
FIG. 6 is a structural diagram of an upper arm of an antenna of the thin film microstrip transition antenna probe structure of the present invention;
FIG. 7 is a diagram of the lower antenna arm structure of the thin film microstrip transition antenna probe structure of the present invention;
description of reference numerals: 1. an upper cavity; 2. a lower cavity; 3. an antenna probe combination; 4. a rectangular input waveguide; 5. a rectangular output waveguide; 6. a transition probe cavity; 7. a monolithic circuit shielding cavity; 8. a boss; 31. a thin film microstrip signal line metal layer; 32. a thin film microstrip dielectric layer; 33. a thin film microstrip ground metal layer; 34. a monolithic substrate layer; 35. an antenna upper arm; 36. an antenna lower arm; 301. bending the upper left; 302. an antenna impedance matching stub; 303. bending the upper right part; 304. bending the left lower part; 305. a rectangular structure; 306. and (5) bending the lower right part.
Detailed Description
The invention is further described with reference to the following figures and specific embodiments:
as shown in fig. 1 to 4, the transition probe structure of the thin-film microstrip antenna provided by the invention comprises an upper cavity 1, a lower cavity 2 and an antenna probe assembly 3, wherein strip-shaped grooves with the same structure are formed in the upper cavity 1 and the lower cavity 2, and the width of the middle part of each strip-shaped groove is larger than the width of the two ends of each strip-shaped groove. Two strip-shaped grooves form a rectangular input waveguide 4, a transition probe cavity 6 and a rectangular output waveguide 5 which are sequentially connected after the upper cavity 1 and the lower cavity 2 are closed, and the width of the transition probe cavity 6 is wider than that of the rectangular input waveguide 4 and that of the rectangular output waveguide 5.
The middle part of the lower cavity 2 is provided with a boss 8, the antenna probe assembly 3 is arranged on the boss 8 of the lower cavity 2, and a single-chip circuit shielding cavity 7 is formed between the upper cavity 1 and the boss 8. The antenna probe combination 3 is bonded with the lower cavity 2, and an upper arm 35 of an antenna in the antenna probe combination 3 is exposed in the air on the upper surface. Electromagnetic signals are input from the rectangular input waveguide 4, processed by the antenna probe combination 3 in the transition probe cavity 6 and output from the rectangular output waveguide 5.
In this embodiment, the width of the transition probe cavity 6 is wider than the rectangular input waveguide 4 and the rectangular output waveguide 5, so that the antenna probe assembly 3 with a not very wide width can be directly placed conveniently, and the transition loss can be reduced by adopting the gradually-changed structure for the lower cavity 2. The width of the actual antenna probe assembly 3 may be much larger than the widths of the rectangular input waveguide 4 and the rectangular output waveguide 5, in which case the width of the input and output portion in the antenna probe assembly 3 needs to be reduced until the width is close to the widths of the rectangular input waveguide 4 and the rectangular output waveguide 5, so as to avoid that the electromagnetic wave mode in the transition cavity is too different from the electromagnetic wave mode in the input and output waveguide.
As shown in fig. 5, the antenna probe assembly 3 includes a thin film microstrip signal line metal layer 31, a thin film microstrip dielectric layer 32, a thin film microstrip ground metal layer 33, and a monolithic substrate layer 34, which are sequentially arranged from top to bottom; an upper antenna arm 35 is mounted on the thin-film microstrip signal line metal layer 31, and a lower antenna arm 36 is mounted on the thin-film microstrip ground metal layer 33. The monolithic substrate layer 34 is provided with a metallized through hole for improving the performance of the thin film microstrip antenna transition probe structure of the present invention. In the present embodiment, the thin film microstrip dielectric layer 32 is made of benzocyclobutene.
As shown in fig. 6 and 7, the antenna lower arm 36 includes a rectangular structure 305, a left lower bend 304 and a right lower bend 306 with the same structure are disposed in the middle of two opposite sides of the rectangular structure 305, the left lower bend 304 and the right lower bend 306 are in the shape of "L", one end of the left lower bend 304 and one end of the right lower bend 306 are respectively connected to two sides of the rectangular structure 305, and the other end of the left lower bend 304 and the other end of the right lower bend 306 are parallel to each other and extend in opposite directions.
The middle section of the upper antenna arm 35 is provided with two antenna impedance matching branches 302 with the same structure, and the middle section of the upper antenna arm 35 is parallel to the axis of the transition probe cavity 6. The antenna upper arm 35 is provided with a left upper bend 301 and a right upper bend 303 at two ends, the structure of the antenna upper arm 35 is Z-shaped, the extending direction of the left upper bend 301 is opposite to the extending direction of the right upper bend 303, and the extending direction of the left upper bend 301 and the extending direction of the right upper bend 303 are respectively vertical to the middle section of the antenna upper arm 35.
The left upper bend 301 extends in a direction opposite to the left lower bend 304, and the right upper bend 303 extends in a direction opposite to the right lower bend 306.
The bottom of the monolithic substrate layer 34 adopts a back gold process, and the parts of the monolithic substrate layer 34 corresponding to the upper left bend 301, the upper right bend 303, the lower left bend 304 and the lower right bend 306 are free of back gold.
The lengths of the antenna upper arm 35 and the antenna lower arm 36 are adjusted, so that the radiation direction of the antenna probe combination 3 is the same as the axial direction of the transition probe cavity 6. An optimum transition performance is obtained when the direction of radiation of the antenna probe assembly 3 is along the central axis of the transition probe cavity 6. The upper antenna arm 35 is exposed in the air and the lower antenna arm 36 is located between the thin-film microstrip dielectric layer 32 and the monolithic substrate layer 34 (such as GaAs or InP), so the dielectric constants of the environments in which the upper antenna arm 35 and the lower antenna arm 36 are located are very different, the upper antenna arm 35 and the lower antenna arm 36 are respectively located in different layers, and the lengths and widths of the upper antenna arm 35 and the lower antenna arm 36 are different, so that the upper antenna arm 35 may optionally cover a high-dielectric-constant low-loss dielectric layer and a passivation layer to balance the electromagnetic field distribution in a specific embodiment.
In order to ensure that the maximum radiation direction of the transition probe structure of the thin film microstrip antenna coincides with the axis of the transition probe cavity 6 as much as possible, the distance between the thin film microstrip signal line metal layer 31 and the thin film microstrip ground metal layer 33 in the embodiment is 5um, the actual distance is determined according to specific conditions, but the distance cannot be too large, otherwise, the performance of the transition structure is affected. Under the condition of different performance requirements, the transition probe structure can be designed to have a certain distance, and finally the maximum radiation direction of the transition probe structure of the thin-film microstrip antenna is close to the axial direction of the transition probe cavity 6.
The central position of the upper cavity 1 corresponding to the transition probe cavity 6 can also be added with a structure similar to the boss 8 in the lower cavity 2, so as to improve the isolation between the rectangular input waveguide 4 end and the rectangular output waveguide 5 end of the transition probe structure of the whole thin-film microstrip antenna.
It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.
Claims (8)
1. A transition probe structure of a thin film microstrip antenna is characterized in that: the antenna probe assembly comprises an upper cavity (1), a lower cavity (2) and an antenna probe assembly (3), wherein the upper cavity (1) and the lower cavity (2) are closed to form a rectangular input waveguide (4), a transition probe cavity (6) and a rectangular output waveguide (5) which are sequentially connected; a boss (8) is arranged in the middle of the lower cavity (2), the antenna probe combination (3) is arranged on the boss (8), a single-chip circuit shielding cavity (7) is formed between the upper cavity (1) and the boss (8), electromagnetic signals are input from the rectangular input waveguide (4), and are output from the rectangular output waveguide (5) after being processed by the antenna probe combination (3) in the transition probe cavity (6);
the antenna probe combination (3) comprises a thin film micro-strip signal line metal layer (31), a thin film micro-strip dielectric layer (32), a thin film micro-strip ground metal layer (33) and a single chip circuit substrate layer (34) which are sequentially arranged from top to bottom; an antenna upper arm (35) is installed in the thin film micro-strip signal line metal layer (31), an antenna lower arm (36) is installed in the thin film micro-strip ground metal layer (33), and a metalized through hole is formed in the single-chip circuit substrate layer (34);
the antenna lower arm (36) comprises a rectangular structure (305), the middle parts of two opposite sides of the rectangular structure (305) are provided with a left lower bend (304) and a right lower bend (306) which are identical in structure, the structures of the left lower bend (304) and the right lower bend (306) are L-shaped, one end of the left lower bend (304) and one end of the right lower bend (306) are respectively connected with two sides of the rectangular structure (305), and the other end of the left lower bend (304) and the other end of the right lower bend (306) are parallel to each other and opposite in extension direction;
the middle section of the upper antenna arm (35) is provided with two antenna impedance matching branches (302) with the same structure, and the middle section of the upper antenna arm (35) is parallel to the axis of the transition probe cavity (6); the antenna comprises an upper antenna arm (35), wherein a left upper bend (301) and a right upper bend (303) are arranged at two ends of the upper antenna arm (35), the upper antenna arm (35) is Z-shaped, the extending direction of the left upper bend (301) is opposite to the extending direction of the right upper bend (303), and the extending direction of the left upper bend (301) and the extending direction of the right upper bend (303) are respectively vertical to the middle section of the upper antenna arm (35);
the extending direction of the left upper bend (301) is opposite to the extending direction of the left lower bend (304), and the extending direction of the right upper bend (303) is opposite to the extending direction of the right lower bend (306).
2. The thin film microstrip antenna transition probe structure of claim 1 wherein: the middle section of the antenna upper arm (35) is provided with two antenna impedance matching branches (302) with the same structure, and the middle section of the antenna upper arm (35) is parallel to the axis of the transition probe cavity (6).
3. The thin film microstrip antenna transition probe structure of claim 2 wherein: and a left upper bend (301) and a right upper bend (303) are arranged at two ends of the antenna upper arm (35), and the extending direction of the left upper bend (301) is opposite to the extending direction of the right upper bend (303).
4. The thin film microstrip antenna transition probe structure of claim 3 wherein: the extending direction of the left upper bend (301) is opposite to the extending direction of the left lower bend (304), and the extending direction of the right upper bend (303) is opposite to the extending direction of the right lower bend (306).
5. The thin film microstrip antenna transition probe structure of claim 4 wherein: the bottom of the single chip circuit substrate layer (34) adopts a back gold process, and no back gold exists at the positions, corresponding to the upper left bend (301), the upper right bend (303), the lower left bend (304) and the lower right bend (306) in the antenna probe combination (3), of the bottom of the single chip circuit substrate layer (34).
6. The thin film microstrip antenna transition probe structure of claim 1 wherein: the radiation direction of the antenna probe combination (3) is the same as the axial direction of the transition probe cavity (6).
7. The thin film microstrip antenna transition probe structure of claim 1 wherein: the antenna probe combination (3) is bonded with the lower cavity (2).
8. The thin film microstrip antenna transition probe structure of claim 1 wherein: the width of the transition probe cavity (6) is larger than the widths of the rectangular input waveguide (4) and the rectangular output waveguide (5).
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109828330B (en) * | 2019-01-30 | 2020-01-07 | 电子科技大学 | Terahertz on-chip integrated antenna transition structure with multi-stage gradient waveguide structure |
| CN113131106B (en) * | 2019-12-31 | 2022-06-10 | 同方威视技术股份有限公司 | Terahertz mixer and electronic component |
| CN112701092A (en) * | 2020-12-24 | 2021-04-23 | 北京国联万众半导体科技有限公司 | Millimeter wave monolithic integrated circuit packaging structure and packaging method thereof |
| CN112993506B (en) * | 2021-02-24 | 2022-07-01 | 电子科技大学 | Terahertz wire-jumping-free microstrip probe monolithic and system-level circuit integrated packaging structure |
| CN113178671B (en) * | 2021-04-23 | 2022-12-27 | 电子科技大学 | Terahertz monolithic circuit transition structure |
| CN113239656B (en) * | 2021-05-08 | 2023-06-13 | 河北雄安太芯电子科技有限公司 | Terahertz monolithic circuit structure integrated on chip probe and design method thereof |
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