CN113131106B - Terahertz mixer and electronic component - Google Patents
Terahertz mixer and electronic component Download PDFInfo
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- CN113131106B CN113131106B CN201911425352.0A CN201911425352A CN113131106B CN 113131106 B CN113131106 B CN 113131106B CN 201911425352 A CN201911425352 A CN 201911425352A CN 113131106 B CN113131106 B CN 113131106B
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- microstrip line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/10—Wire waveguides, i.e. with a single solid longitudinal conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
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Abstract
The present disclosure provides a terahertz frequency mixer and an electronic component, the terahertz frequency mixer including: the device comprises a metal cavity, a local oscillator input waveguide and a radio frequency input waveguide, wherein the metal cavity is formed with the radio frequency input waveguide and the local oscillator input waveguide; the microstrip line is accommodated in the metal cavity and extends into the metal cavity where the radio frequency input waveguide and the local oscillator input waveguide are located respectively to form an antenna for receiving the radio frequency signal and the local oscillator signal respectively, a metal grounding layer is arranged at the first end, far away from the radio frequency input waveguide, of the microstrip line, and a blocking structure for blocking the transmission of the radio frequency signal to the first end is arranged on at least the part, far away from the first end, of the metal grounding layer. According to the terahertz frequency mixer, the blocking structure is arranged on the metal grounding layer in the metal cavity to block the radio-frequency signal from being continuously transmitted to the first end (namely the grounding end), so that the influence of uncertain factors caused by conductive adhesive smearing or other welding materials on the characteristics of the terahertz frequency mixer is effectively reduced, and the reliability and consistency of the terahertz frequency mixer are improved.
Description
Technical Field
The present disclosure relates to the field of communications, and in particular, to a terahertz frequency mixer and an electronic component including the same.
Background
In recent years, the terahertz technology has received more and more attention at home and abroad as an important research field. As can be seen from the atmospheric transmission characteristics of the terahertz waves, water molecule absorption windows exist near 183GHz, 320GHz, 380GHz and 664GHz, and are key frequency bands for detecting atmospheric humidity contour lines; millimeter wave propagation is less attenuated at 94GHz, 140GHz and 220GHz, and is adopted by low-altitude air-ground missiles and ground-based radars based on point-to-point communication. And thus research into these frequency bands is very important.
No matter which aspect and which frequency band the terahertz wave is applied to, the terahertz wave can not be received, and for the most common receiver based on the superheterodyne system, a mixer for realizing frequency down-conversion is one of the key components. In systems such as solid-state terahertz radar and communication, because the low-noise amplifier is difficult to implement, the mixer becomes the first stage of the receiving end, and the performance of the mixer directly relates to the performance of the whole receiver system. Meanwhile, the realization difficulty of the same-frequency-band high-performance local vibration source is high, so that the adoption of the subharmonic mixing technology is an effective way for solving the problem. Among the only few types of mixers capable of working in the terahertz frequency band, only the terahertz subharmonic mixer based on the planar schottky diode can work at room temperature, and a harsh low-temperature environment is not required to be realized by providing liquid helium and the like, so that the terahertz subharmonic mixer is widely applied.
Aiming at the terahertz waveband range of 100 GHz-500 GHz, one of the main receiver schemes at present is a super-heterodyne receiver, and particularly when the frequency is higher than 200GHz, the frequency conversion loss of a mixer based on a silicon-based CMOS (complementary metal oxide semiconductor) process and a silicon-germanium CMOS process is large, and the mixer is not suitable for application, so that the mixer still mainly depends on a terahertz subharmonic mixer of a gallium arsenide Schottky diode packaged in a plane. At present, a terahertz subharmonic mixer of a gallium arsenide schottky diode based on plane packaging mainly adopts a main current circuit structure of a microstrip line, and a passive circuit is composed of a radio frequency port transition part, a local oscillator low-pass filter part, a local oscillator intermediate frequency duplex part (including the local oscillator port transition part and the intermediate frequency low-pass filter part) and the like.
The radio frequency grounding scheme of the terahertz frequency mixer of the plane-packaged gallium arsenide schottky diode in the prior art mainly comprises the following steps: in the scheme 1, the gallium arsenide Schottky diode is inversely bonded on a quartz substrate microstrip line, and a metal cavity is arranged at the periphery of the gallium arsenide Schottky diode. This scheme is simple and easy to implement, but the shortcoming is also comparatively obvious: in order to eliminate the dc offset caused by the non-uniformity of the schottky diode pair, a radio frequency ground terminal is required, and the dc offset is generally realized by using conductive silver paste or gold wire bonding. The gold wire binding has relatively general reliability due to small contact surface, and the shape and the trend of the gold wire have large influence on impedance; the conductive silver paste is smeared in a mode that the contact surface is large, so that the reliability is relatively good, but at present, the conductive silver paste is mainly smeared manually, the consistency of smearing every time and the smearing area are different due to operators, and the randomness is large. These all have a great influence on impedance matching of high-frequency signal transmission; scheme 2, a monolithic integration second harmonic mixer link structure based on gallium arsenide (both schottky diode and microstrip line adopt gallium arsenide substrate synchronous processing), and the periphery is a metal cavity. According to the scheme, the radio frequency ground can be led out by adopting a Beam-lead (Beam-lead) process, and is connected with the metal cavity in a pressure welding manner, so that the whole process is simple, and the reliability is high. However, this process cannot be used in case 1, and currently mixers below 500GHz are assembled mainly in the manner of case 1.
Disclosure of Invention
An object of the present disclosure is to solve at least one aspect of the above problems and disadvantages in the related art.
According to an embodiment of an aspect of the present disclosure, there is provided a terahertz mixer including:
the device comprises a metal cavity, a local oscillator and a power supply, wherein the metal cavity is provided with a radio frequency input waveguide and a local oscillator input waveguide;
the microstrip line is accommodated in the metal cavity and extends into the metal cavity where the radio frequency input waveguide and the local oscillator input waveguide are located respectively to form an antenna for receiving radio frequency signals and local oscillator signals respectively, and a metal grounding layer is arranged at a first end, far away from the radio frequency input waveguide, of the microstrip line.
At least a part of the metal ground layer far away from the first end is provided with a blocking structure for blocking the radio frequency signal from being transmitted to the first end.
In some embodiments, the blocking structure is a protrusion from an inner surface of the metal cavity.
In some embodiments, the protrusion is located at a lower portion of the metal cavity.
In some embodiments, the protrusion is located at an upper portion of the metal cavity.
In some embodiments, a spacing between the bump and the microstrip line is less than or equal to 20 microns.
In some embodiments, the metal ground layer is soldered to the microstrip line.
In some embodiments, the metal grounding layer is adhered to the microstrip line by conductive adhesive.
In some embodiments, the first end of the microstrip line is provided with an air cavity for assisting the gluing or soldering operation of the metal ground layer.
In some embodiments, a second end of the microstrip line opposite to the first end is provided with a microstrip line portion for performing a mixing operation for a radio frequency signal.
According to an embodiment of another aspect of the present disclosure, there is also provided an electronic component including the terahertz mixer as described above.
According to the terahertz frequency mixer and the electronic component disclosed by the various embodiments of the disclosure, the blocking structure is arranged on at least a part, far away from the first end, of the metal grounding layer in the metal cavity, so as to block the radio-frequency signal from being continuously transmitted to the first end (namely the grounding end) of the radio frequency, and thus, the influence of uncertain factors introduced by conductive adhesive smearing or other welding materials on the characteristics of the terahertz frequency mixer is effectively reduced, and the reliability and consistency of the terahertz frequency mixer are improved.
Drawings
Fig. 1 shows a schematic diagram of the operation of a terahertz mixer;
Fig. 2 is a perspective view illustrating a terahertz mixer according to an exemplary embodiment of the present disclosure;
fig. 3 is a bottom view illustrating a radio frequency transition microstrip line of a terahertz mixer according to the present disclosure;
fig. 4 is a schematic diagram illustrating the installation of a radio frequency transition microstrip line of a terahertz mixer according to the present disclosure inside a metal cavity;
fig. 5 shows a schematic diagram of the influence of the conductive paste smear length of the radio frequency transition microstrip line of the terahertz mixer according to an exemplary embodiment of the present disclosure on the characteristics of the transmission parameter S; and
fig. 6 shows a schematic diagram illustrating an influence of a ground portion structure length on a microstrip line of a radio frequency transition microstrip line of a terahertz mixer according to an exemplary embodiment of the present disclosure on characteristics of a transmission parameter S.
Detailed Description
While the present disclosure will be fully described with reference to the accompanying drawings, which contain preferred embodiments of the disclosure, it should be understood, prior to this description, that one of ordinary skill in the art can modify the inventions described herein while obtaining the technical effects of the present disclosure. Therefore, it should be understood that the foregoing description is a broad disclosure directed to persons of ordinary skill in the art, and that there is no intent to limit the exemplary embodiments described in this disclosure.
Furthermore, in the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details. In other instances, well-known structures and devices are shown in schematic form in order to simplify the drawing.
According to the general inventive concept of the present disclosure, there is provided a terahertz mixer including: the device comprises a metal cavity, a local oscillator and a power supply, wherein the metal cavity is provided with a radio frequency input waveguide and a local oscillator input waveguide; the microstrip line is accommodated in the metal cavity and extends into the metal cavity where the radio frequency input waveguide and the local oscillator input waveguide are located respectively to form an antenna for receiving a radio frequency signal and a local oscillator signal respectively, a metal grounding layer is arranged on a first end of the microstrip line, which is far away from the radio frequency input waveguide, and a blocking structure for blocking the radio frequency signal from being transmitted to the first end is arranged on at least the part, which is far away from the first end, of the metal grounding layer.
According to another general inventive concept of the present disclosure, there is also provided an electronic assembly including the terahertz mixer as described above.
Fig. 1 shows an operation schematic diagram of a terahertz mixer. As shown in fig. 1, the terahertz frequency mixer is a radio frequency transition microstrip line frequency mixer, and mainly includes a metal cavity and a radio frequency transition microstrip line. The metal cavity is used for forming the radio frequency input waveguide 101 and the local oscillator input waveguide 102 and accommodating the microstrip line 202, and a part of the microstrip line 202 extends into the metal cavity where the radio frequency input waveguide 101 and the local oscillator input waveguide 102 are located, so as to form an antenna for receiving the radio frequency input signal and the local oscillator input signal. For other components and size parameters of the mixer, reference may be made to the prior art, or other documents or patents.
The working process of the mixer comprises the steps that a terahertz signal to be received is input into a waveguide 101 through radio frequency, and the terahertz signal is transmitted into an antenna 104 of a microstrip line in a waveguide-transition-microstrip line structure of an E-plane probe; the local oscillator signal entering from the local oscillator input waveguide 102 passes through the microstrip transition structure 107 of the duplexer and the local oscillator low pass filter 106, is mixed with the radio frequency signal in the gallium arsenide schottky diode 109, the radio frequency signal is mixed with the second harmonic of the local oscillator, the intermediate frequency signal after the difference is obtained reaches the intermediate frequency output port 103 through the intermediate frequency filter 108, and then is transmitted to the load through an additional SMA connector (or other connectors such as 2.92 mm). In order to avoid the dc offset caused by the non-uniformity of the schottky diode 109 pair, the ground wire 105 led out from the microstrip circuit and connected to the metal cavity may be coated on the nearest metal cavity by conductive silver paste or bonded and soldered on the nearest metal cavity by gold wire bonding.
The radio frequency signal and the local oscillator signal are fed in from respective ports respectively, are loaded on the frequency mixing diode after passing through the microstrip line and the corresponding matching network, and the local oscillator signal frequency is lower than the waveguide cut-off frequency of the radio frequency port, so the local oscillator signal cannot leak from the radio frequency port, and the radio frequency signal cannot leak from the local oscillator port due to the existence of a local oscillator low-pass filter (passing local oscillator frequency and blocking radio frequency), thereby realizing the isolation between the two ports. The intermediate frequency signal generated by mixing is output from the local oscillator duplexer through a microstrip low pass filter.
Specific details of the present solution are described below with reference to more specific examples, and it should be understood that the dimensions and proportions in the figures are for illustration only, and are not relevant to the actual structure.
Fig. 2 is a schematic perspective view illustrating a terahertz mixer according to an exemplary embodiment of the present disclosure; fig. 3 is a bottom view illustrating a radio frequency transition microstrip line of a terahertz mixer according to the present disclosure; fig. 4 is a schematic diagram illustrating the installation of a radio frequency transition microstrip line of a terahertz mixer according to the present disclosure inside a metal cavity.
As shown in fig. 2 to 4, a first end (i.e., a ground end) of the microstrip line 202 of the terahertz mixer 200, which is away from the radio frequency input waveguide 201, is provided with a metal ground layer 203 for connecting with the metal cavity 209, and a blocking structure 204 is provided on at least a portion of the metal ground layer 203, which is away from the first end, to block transmission of the radio frequency signal to the first end. A short-circuit end 208 of the radio frequency input waveguide is arranged at an end of the metal cavity 209 opposite to the end where the radio frequency input waveguide 201 is located. A second end of the microstrip line 202 opposite to the first end is provided with a microstrip line portion 206 for performing a mixing operation for a radio frequency signal. When the frequency mixer works, a radio-frequency signal enters from the radio-frequency input waveguide 201 and then is input to the microstrip line 202, and the blocking structure 204 is arranged on at least the part, far away from the first end, of the metal grounding layer 203, so that the radio-frequency signal can be effectively isolated from being transmitted to the ground end, and the radio-frequency signal can be ensured to be transmitted to the frequency mixing diode only through the microstrip line part 206. Since the transmission of the radio frequency signal to the ground end of the microstrip line is effectively blocked, the characteristic of the radio frequency transition microstrip line is insensitive to the size of the conductive adhesive 205 smearing or other solder welding area, that is, the influence of uncertain factors introduced by the conductive adhesive 205 smearing or other solders on the characteristic of the terahertz mixer can be effectively reduced by arranging the blocking structure 204 (as shown in fig. 5 and 6).
It should be noted that the blocking structure 204 can be designed to have a specific shape according to the processing conditions, as long as the microstrip line 202 is ensured to be safely mounted and fixed, and the purpose of effectively blocking the transmission of the radio frequency signal to the ground end of the microstrip line 202 is achieved. The microstrip line in the terahertz frequency mixer can be a common microstrip line structure and can also be a suspension microstrip line structure; the microstrip line can be a quartz microstrip line, and can also be a microstrip line based on quartz, gallium arsenide or indium phosphide substrate. In the embodiment shown in fig. 2, the width of the microstrip line is about 50 micrometers to 2 millimeters, preferably 400 micrometers, and the thickness is about 5 micrometers to 200 micrometers, preferably about 50 micrometers, which should be noted that those skilled in the art can make corresponding adjustments according to actual requirements. In addition, the rf input waveguide 201 may be a height-reducing waveguide or a general straight waveguide, and if a standard waveguide port is selected, the corresponding model is WR 4.3.
In an exemplary embodiment of the present disclosure, as shown in fig. 2, the blocking structure 204 is a protrusion protruding from an inner surface of the metal cavity 209.
In an exemplary embodiment of the present disclosure, as shown in fig. 2, the blocking structure 204 is a protrusion protruding downward from an inner surface of the metal cavity 209, in which case the blocking structure 204 is located at an upper portion of the metal cavity 209. However, it should be noted that in some other embodiments of the present disclosure, the blocking structure 204 may also be a protrusion protruding upward from the inner surface of the metal cavity 209, in which case the blocking structure 204 is located at the lower portion of the metal cavity 209.
In an exemplary embodiment of the present disclosure, as shown in fig. 2, a distance between the blocking structure 204 and the microstrip line 202 in a direction perpendicular to the plane of the microstrip line 202 may be controlled, for example, by machining precision, wherein the smaller the distance between the blocking structure 204 and the microstrip line 202, the better, it is generally between 0 micron and 20 microns, and preferably controlled below 10 microns, so as to ensure that the radio frequency signal is effectively blocked from being transmitted to the first end.
In a preferred embodiment of the present disclosure, as shown in fig. 2, the metal ground layer 203 may be soldered on the microstrip line 202 by using solder, or may be adhered on the microstrip line 202 by using a conductive adhesive 205, thereby simplifying the processing method.
In an exemplary embodiment of the present disclosure, as shown in fig. 2, the first end of the microstrip line 202 is provided with an air cavity 207 that assists the gluing or soldering operation of the metal ground layer 203. Because the transmission of the radio frequency signal to the first end of the microstrip line 202 is effectively blocked by the blocking structure 204, the influence of the size and the length of the air cavity 207 on the characteristics of the microstrip line is small, and thus the impedance change of the shape in the air cavity 207 on the whole microstrip line can be ignored.
According to another aspect of the present disclosure, there is also provided an electronic component including the terahertz mixer as described above.
According to the terahertz frequency mixer and the electronic component disclosed by the various embodiments of the disclosure, the blocking structure is arranged on at least the part, far away from the first end, of the metal grounding layer in the metal cavity, so that the radio-frequency signal is blocked from being continuously transmitted to the grounding end, and therefore the influence of uncertain factors introduced by conductive adhesive smearing or other welding materials on the characteristics of the terahertz frequency mixer is effectively reduced, and the reliability and consistency of the terahertz frequency mixer are improved.
It will be appreciated by those skilled in the art that the embodiments described above are exemplary and can be modified by those skilled in the art, and that the structures described in the various embodiments can be freely combined without conflict in structure or principle.
Having described preferred embodiments of the present disclosure in detail, it will be apparent to those skilled in the art that various changes and modifications may be made without departing from the scope and spirit of the appended claims, and the disclosure is not to be limited to the exemplary embodiments set forth in the specification.
Claims (8)
1. A terahertz mixer, comprising:
the device comprises a metal cavity, a local oscillator input waveguide and a radio frequency input waveguide, wherein the metal cavity is provided with the radio frequency input waveguide and the local oscillator input waveguide;
A microstrip line accommodated in the metal cavity and extending into the metal cavity where the radio frequency input waveguide and the local oscillator input waveguide are located to form an antenna for receiving a radio frequency signal and a local oscillator signal, respectively, a metal ground layer is disposed at a first end of the microstrip line away from the radio frequency input waveguide,
the part of the metal grounding layer, which is close to the second end of the microstrip line opposite to the first end, is provided with a blocking structure for blocking the radio-frequency signal from being transmitted to the first end, and the metal grounding layer is adhered to the microstrip line by conductive adhesive.
2. The terahertz mixer of claim 1, wherein the blocking structure is a protrusion protruding from an inner surface of the metal cavity.
3. The apparatus of claim 2, wherein the protrusion is located at a lower portion of the metal cavity.
4. The apparatus of claim 2, wherein the protrusion is located at an upper portion of the metal cavity.
5. The apparatus of claim 2, wherein a spacing between the bump and the microstrip line is less than or equal to 20 microns.
6. The apparatus of claim 1, wherein the first end of the microstrip line is provided with an air cavity that assists the metal ground layer gumming operation.
7. The terahertz mixer according to any one of claims 1 to 6, wherein a second end of the microstrip line opposite to the first end is provided with a microstrip line portion for performing a mixing operation for a radio frequency signal.
8. An electronic component, wherein the electronic component comprises a terahertz mixer according to any one of claims 1 to 7.
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| CN201911425352.0A CN113131106B (en) | 2019-12-31 | 2019-12-31 | Terahertz mixer and electronic component |
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| CN201911425352.0A CN113131106B (en) | 2019-12-31 | 2019-12-31 | Terahertz mixer and electronic component |
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| CN113131106B true CN113131106B (en) | 2022-06-10 |
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| CN107395128A (en) * | 2017-07-10 | 2017-11-24 | 中国电子科技集团公司第十三研究所 | Terahertz frequency mixer |
| CN206922720U (en) * | 2017-06-01 | 2018-01-23 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Terahertz harmonic mixer based on Schottky diode |
| GB2561205A (en) * | 2017-04-05 | 2018-10-10 | Univ London Queen Mary | Subharmonic mixer |
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2019
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| CN105207625A (en) * | 2015-10-08 | 2015-12-30 | 电子科技大学 | Broadband terahertz harmonic mixer |
| GB2561205A (en) * | 2017-04-05 | 2018-10-10 | Univ London Queen Mary | Subharmonic mixer |
| CN206922720U (en) * | 2017-06-01 | 2018-01-23 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Terahertz harmonic mixer based on Schottky diode |
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