CN105743533A - High-temperature non-pressure seamless sintering technology-based miniaturized millimeter wave transmitting and receiving assembly - Google Patents
High-temperature non-pressure seamless sintering technology-based miniaturized millimeter wave transmitting and receiving assembly Download PDFInfo
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- CN105743533A CN105743533A CN201510957640.6A CN201510957640A CN105743533A CN 105743533 A CN105743533 A CN 105743533A CN 201510957640 A CN201510957640 A CN 201510957640A CN 105743533 A CN105743533 A CN 105743533A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
- H05K9/002—Casings with localised screening
- H05K9/0022—Casings with localised screening of components mounted on printed circuit boards [PCB]
- H05K9/0024—Shield cases mounted on a PCB, e.g. cans or caps or conformal shields
- H05K9/0026—Shield cases mounted on a PCB, e.g. cans or caps or conformal shields integrally formed from metal sheet
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- Microelectronics & Electronic Packaging (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
Abstract
The invention discloses a high-temperature non-pressure seamless sintering technology-based miniaturized millimeter wave transmitting and receiving assembly. The high-temperature non-pressure seamless sintering technology-based miniaturized millimeter wave transmitting and receiving assembly includes a shielding box body, a local vibration frequency multiplication link, a power allocation link, a receiving link and a transmitting link; the local vibration frequency multiplication link is connected with the power allocation link; the power allocation link is connected with the receiving link and the transmitting link; a 85:15 tungsten copper alloy shielding box body is adopted as the shielding box body; the links are in direct bonded connection with adjacent MMIC chips through 25 um golden wires; conversion can be realized through glass insulator and copper bar high-temperature sintered integrated probe waveguides. The high-temperature non-pressure seamless sintering technology-based miniaturized millimeter wave transmitting and receiving assembly of the invention has the advantages of compact structure and easiness in debugging, and can effectively meet the requirements of an ultra-wide-band and high-speed millimeter wave communication system.
Description
Technical field
The invention belongs to millimetre-wave attenuator technical field, be specifically related to a kind of miniaturization millimeter wave transceiving assembly based on high temperature pressure-free seamless sintering technology.
Background technology
Conversion between high-frequency signal and intermediate-freuqncy signal is relied primarily on millimeter wave transceiving assembly by millimeter wave wireless transceiver system, and it is the important component part of millimeter-wave communication system.Existing millimeter wave transceiving assembly all adopts conductive silver paste PCB printed board, mmic chip etc. to be pasted on aluminum matter shielding box body, is connected by the microstrip line in PCB printed board, cause that structure is complicated, bulky, debugging amount is big, reliability is low between mmic chip.Waveguide coaxial connecter adopts microstrip line transition simultaneously, is limited by processing technique precision, causes communication band narrow.Serious restriction millimetre-wave attenuator ultra broadband, the development of two-forty and application.
Summary of the invention
It is an object of the invention to provide a kind of miniaturization millimeter wave transceiving assembly based on high temperature pressure-free seamless sintering technology, by improving structure and technique, solve that existing millimeter wave transceiving modular construction is complicated, bulky, debugging amount is big, reliability is low, the narrow such shortcoming of communication band, the miniaturization millimeter wave transceiving assembly of a kind of function admirable is provided, its compact conformation, be prone to debugging, it is possible to effectively meet the millimeter-wave communication system demand of ultra broadband, two-forty.
In order to overcome deficiency of the prior art, the invention provides the solution of a kind of miniaturization millimeter wave transceiving assembly based on high temperature pressure-free seamless sintering technology, specific as follows:
A kind of miniaturization millimeter wave transceiving assembly based on high temperature pressure-free seamless sintering technology, specifically include a shielding box body 202, local oscillator frequency multiplication link 101, power distribution link 4, receive link 103, transmitting chain 104, local oscillator frequency multiplication link 101 distributes link 4 with power and connects, and power distribution link 4 connects with reception link 103 and transmitting chain 104 respectively；
Described shielding box body 202 adopts 85:15 tungsten-copper alloy, its coefficient of expansion 7.3 is close with the MMIC substrate coefficient of expansion 7.5, surface gold-plating 3um, it is easy to high temperature pressure-free sintering, MMIC substrate in sintering process is made to be unlikely to deform, being internally integrated local oscillator frequency multiplication link 101, power distribution link 4, receiving link 103, transmitting chain 104, thus realizing miniaturization；
Described power distribution link 4 adopts 99.6% aluminium sesquioxide substrate of dielectric constant 9.9, it is simple to being connected with other links bonding, its coefficient of expansion is 7.5, it is simple to shielding box body sintering；
Described local oscillator frequency multiplication link 101 comprises 50 ohm microstrip 16, frequency tripler 1, local oscillator band filter 2, this vibration magnifier 3, frequency tripler 1 and this vibration magnifier 3 adopt MMIC process manufacture, and 50 ohm microstrip 16 and local oscillator band filter 2 adopt 99.6% aluminium sesquioxide substrate of dielectric constant 9.9；
Described reception link 103 comprises coaxial conversion 11,50 ohm microstrip 16, low-noise amplifier 12, image-reject filter 13, gain amplifier 14, the low-converter 15 that receive waveguide probe, wherein low-noise amplifier 12, gain amplifier 14 and low-converter 15 adopt MMIC process manufacture, and 50 ohm microstrip 16 and image-reject filter 13 adopt 99.6% aluminium sesquioxide substrate of dielectric constant 9.9；
Described transmitting chain 104 comprises coaxial conversion 10,50 ohm microstrip 16, power amplifier 9, driving amplifier 8, pre-amplifier 7, emission bandpass wave filter 6, the upconverter 5 of launching waveguide probe, its intermediate power amplifier 9, driving amplifier 8, pre-amplifier 7 and upconverter 5 adopt MMIC process manufacture, and 50 ohm microstrip 16 and emission bandpass wave filter 6 adopt 99.6% aluminium sesquioxide substrate of dielectric constant 9.9；
The coaxial conversion 11 receiving waveguide probe in described reception link 103 and the coaxial conversion 10 launching waveguide probe in transmitting chain 104, its waveguide mouth adopts standard BJ320 rectangular waveguide, reveal for anti-stop signal, improve receive-transmit isolation, rectangular waveguide and shielding box body integrated design.
From the above, it is seen that the effect of 50 ohm microstrip 16 is easy for radio-frequency (RF) coaxial circuit and the connection of microwave circuit, switching.
Apply such scheme of the present invention, by adopting 85:15 tungsten-copper alloy shielding box body, heat conduction is fast, the coefficient of expansion and mmic chip, 99.6% aluminium sesquioxide substrate are close, are suitable to high temperature pressure-free seamless sintering, make mmic chip, link ground connection is abundant, heat conduction is abundant for the distribution of aluminium sesquioxide substrate wave filter, 50 ohm microstrip, power, reduce parasitic disturbances, and meet all parts one-time process molding, reduce production link production cost and secondary damage；By adopting 25um spun gold Direct Bonding to connect adjacent mmic chip, it is not further added by any auxiliary union piece, is substantially improved port match at different levels, each, reduce volume, reduce debugging amount, reduce link load, reduce parasitic disturbances, improve performance parameter；By adopting glass insulator and the probe waveguide transitions of copper rod high temperature sintering one, solve the processing technique of the diameter 0.3mm length 2.8mm metallic conductor integrated with diameter 1.1mm length 0.8mm that machining cannot complete, widen communication band, effectively meet the millimeter-wave communication system demand of ultra broadband, two-forty.
Accompanying drawing explanation
Fig. 1 is principles of the invention block diagram
Fig. 2 is the circuit theory diagrams of the present invention
Fig. 3 is the inside sintering layout of the present invention
Detailed description of the invention
Below in conjunction with drawings and Examples, summary of the invention is described further:
In the prior art, this product adopts more mmic chip, and mmic chip all adopts the aluminium sesquioxide substrate material matter of 99.6%, this baseplate material coefficient of expansion is 7.5, existing millimeter wave transceiving assembly selected shielding box body essentially copper or aluminium alloy, this section bar coefficient of expansion is about 20, differs relatively big with the baseplate material coefficient of expansion, is difficult to carry out high temperature seamless sintering.Adopt micro-strip printed board to connect between the existing each MMIC of millimeter wave transceiving assembly simultaneously, micro-strip printed board and mmic chip paste on shielding box body by conductive silver paste, conductive silver paste coating is uneven, mmic chip thickness (0.1mm) is too thin, cannot press, cause that ground connection is not fully, easily produce parasitic disturbances, makes port match between mmic chip seriously be affected, and makes bulky.Furthermore micro-strip printed board selected by existing millimeter wave frequency band assembly is the RT5880 sheet material of Rogers, this sheet material coefficient of expansion is 125, cannot with mmic chip one-time process molding, cause needing repeatedly technique to assemble, fault occurrence probability improves accordingly, this sheet material heat conducting coefficient is 0.2, not easily conducts heat, makes product life cycle reliability be affected.Also have existing millimeter-wave communication system transmitting-receiving port should not adopt coaxially connected (loss is too big), waveguide is all adopted to connect, and existing millimetre-wave circuit cannot support full waveguide, coaxial waveguide conversion must be carried out, existing coaxial waveguide switch technology has micro-strip, ladder and three kinds of forms of probe, micro-strip form is commonly used technology, but is subject to the impact of assembly technology, positioning precision, causes the shortcomings such as port match is poor, communication band is narrow, concordance is not high；Stepped-style is primarily directed to what extraordinary signal transmission path requirement (same plane) produced, is restricted by machining accuracy and feature own, and loss is relatively big, should not be applied to transmitting-receiving port；Probe geometries positioning precision is high, machining accuracy can be reached, but owing to millimeter wave frequency band wavelength is short, size is little, Theoretical Calculation data out, and machining cannot realize, the coaxial waveguide conversion of existing probe geometries makes it be activated at a narrower frequency band range mainly by tuning screw, and tuning screw also can reveal certain signal energy, has a strong impact on transceiver insulation, it is unsuitable for two-forty, ultra broadband millimetre-wave attenuator demand.
In order to overcome deficiency of the prior art, the invention provides the solution of the miniaturization millimeter wave transceiving assembly of a kind of high temperature pressure-free sintering technology, specific as follows:
A kind of miniaturization millimeter wave transceiving assembly of high temperature pressure-free seamless sintering technology, millimeter wave transceiving assembly, including local oscillator frequency multiplication link 101, power distribution link 4, receive link 103, transmitting chain 104, be fully integrated in a shielding box body；Local oscillator frequency multiplication link 101 distributes link 4 with power and connects, and power distribution link 4 connects with reception link 103 and transmitting chain 104 respectively；Described shielding box body adopts 85:15 tungsten-copper alloy.
As shown in Figure 2, described local oscillator frequency multiplication link comprises 50 ohm microstrip 16, frequency tripler 1, local oscillator band filter 2, this vibration magnifier 3, wherein frequency tripler 1 and this vibration magnifier 3 adopt MMIC process manufacture, and 50 ohm microstrip 16 and local oscillator band filter 2 adopt 99.6% aluminium sesquioxide substrate of dielectric constant 9.9；Described reception link comprises coaxial conversion 11,50 ohm microstrip 16, low-noise amplifier 12, image-reject filter 13, gain amplifier 14, the low-converter 15 that receive waveguide probe, wherein low-noise amplifier 12, gain amplifier 14 and low-converter 15 adopt MMIC process manufacture, and 50 ohm microstrip 16 and image-reject filter 13 adopt 99.6% aluminium sesquioxide substrate of dielectric constant 9.9；Described transmitting chain comprises coaxial conversion 10,50 ohm microstrip 16, power amplifier 9, driving amplifier 8, pre-amplifier 7, emission bandpass wave filter 6, the upconverter 5 of launching waveguide probe, its intermediate power amplifier 9, driving amplifier 8, pre-amplifier 7 and upconverter 5 adopt MMIC process manufacture, and 50 ohm microstrip 16 and emission bandpass wave filter 6 adopt 99.6% aluminium sesquioxide substrate of dielectric constant 9.9.
As it is shown on figure 3, described local oscillator frequency multiplication link, the mmic chip received in link, transmitting chain, 50 ohm microstrip, emission bandpass wave filter, local oscillator band filter, reception image-reject filter, power distribution link adopt the seamless once sintered molding of high temperature pressure-free.Local oscillation signal inputs after 50 ohm microstrip 16 are by coaxial transition to radio circuit, promote local oscillation signal frequency through frequency tripler 1, signal is divided into two-way by ingoing power distribution link 4 after local oscillator band filter 2 filters humorous clutter, this vibration magnifier 3 promotes local oscillation signal power level, and it is stand-by that a road enters the upconverter 5 that low-converter 15, tunnel received in link enters in transmitting chain.Receive signal in 34-38GHz frequency range and be received coaxial conversion 11,50 ohm microstrip 16 of waveguide probe by after coaxial transition to radio circuit, after low-noise amplifier 12 amplifies and filters humorous clutter into image-reject filter 13, gain is promoted then through gain amplifier 14, after entering low-converter 15 and local oscillation signal down coversion, through 50 ohm microstrip 16 radio circuit is transitioned into coaxial after output.Launch signal after 50 ohm microstrip 16 are by coaxial transition to radio circuit, 34-38GHz in-band signal is exported after entering up-conversion 5 and local oscillation signal up-conversion, emitted band filter 6 filters humorous clutter, after pre-amplifier 7, driving amplifier 8 amplify, through 50 ohm microstrip 16 isolation radiatings, after ingoing power amplifier 9 amplifies, being transitioned into after coaxially by radio circuit then through 50 ohm microstrip 16, emitted waveguide probe coaxially changes 10 output 1W power signals.25um spun gold Direct Bonding is adopted to connect between all adjacent mmic chips and aluminium sesquioxide substrate, it is achieved product size 53mm*41mm*18mm.
The above, it it is only presently preferred embodiments of the present invention, not the present invention is done any pro forma restriction, although the present invention is disclosed above with preferred embodiment, but it is not limited to the present invention, any those skilled in the art, without departing within the scope of technical solution of the present invention, when the technology contents of available the disclosure above makes a little change or is modified to the Equivalent embodiments of equivalent variations, in every case it is without departing from technical solution of the present invention content, technical spirit according to the present invention, within the spirit and principles in the present invention, the any simple amendment that above example is made, equivalent replacement and improvement etc., all still fall within the protection domain of technical solution of the present invention.
Claims (4)
1. the miniaturization millimeter wave transceiving assembly based on high temperature pressure-free seamless sintering technology, it is characterized in that, box body, local oscillator frequency multiplication link, power distribution link, reception link, transmitting chain is shielded including one, local oscillator frequency multiplication link distributes link with power and connects, and power distribution link connects with reception link and transmitting chain respectively；
Described shielding box body adopts 85:15 tungsten-copper alloy, surface gold-plating 3um, is internally integrated local oscillator frequency multiplication link, power distribution link, receives link, transmitting chain；
Described power distribution link adopts 99.6% aluminium sesquioxide substrate of dielectric constant 9.9；
Described local oscillator frequency multiplication link comprises 50 ohm microstrip, frequency tripler, local oscillator band filter, this vibration magnifier, wherein frequency tripler and this vibration magnifier adopt MMIC process to manufacture, and 50 ohm microstrip and local oscillator band filter adopt 99.6% aluminium sesquioxide substrate of dielectric constant 9.9；
Described reception link comprises coaxial conversion, 50 ohm microstrip, low-noise amplifier, image-reject filter, gain amplifier, the low-converter that receive waveguide probe, wherein low-noise amplifier, gain amplifier and low-converter adopt MMIC process to manufacture, and 50 ohm microstrip and image-reject filter adopt 99.6% aluminium sesquioxide substrate of dielectric constant 9.9；
Described transmitting chain comprises coaxial conversion, 50 ohm microstrip, power amplifier, driving amplifier, pre-amplifier, emission bandpass wave filter, the upconverter of launching waveguide probe, its intermediate power amplifier, driving amplifier, pre-amplifier and upconverter adopt MMIC process to manufacture, and 50 ohm microstrip and emission bandpass wave filter adopt 99.6% aluminium sesquioxide substrate of dielectric constant 9.9；
The coaxial conversion receiving waveguide probe in described reception link and the coaxial conversion launching waveguide probe in transmitting chain, its waveguide mouth adopts standard BJ320 rectangular waveguide.
2. the miniaturization millimeter wave transceiving assembly based on high temperature pressure-free seamless sintering technology according to claim 1, it is characterised in that the effect of 50 ohm microstrip is easy for radio-frequency (RF) coaxial circuit and the connection of microwave circuit, switching.
3. the miniaturization millimeter wave transceiving assembly based on high temperature pressure-free seamless sintering technology according to claim 1, it is characterized in that, local oscillation signal inputs after 50 ohm microstrip are by coaxial transition to radio circuit, after frequency tripler lifting local oscillation signal frequency, local oscillator band filter filter humorous clutter, this vibration magnifier lifting local oscillation signal power level, ingoing power distributes link and signal is divided into two-way, and the upconverter that a road enters in the low-converter in reception link, a road entrance transmitting chain is stand-by；Receive signal in 34-38GHz frequency range and be received the coaxial conversion of waveguide probe, 50 ohm microstrip by after coaxial transition to radio circuit, after low-noise amplifier amplifies and filters humorous clutter into image-reject filter, gain is promoted then through gain amplifier, after entering low-converter and local oscillation signal down coversion, through 50 ohm microstrip radio circuit is transitioned into coaxial after output.Launch signal after 50 ohm microstrip are by coaxial transition to radio circuit, 34-38GHz in-band signal is exported after entering up-conversion and local oscillation signal up-conversion, emitted band filter filters humorous clutter, after pre-amplifier, driving amplifier amplify, through 50 ohm microstrip isolation radiatings, after ingoing power amplifier amplifies, being transitioned into after coaxially by radio circuit then through 50 ohm microstrip, emitted waveguide probe coaxially changes output 1W power signal.
4. the miniaturization millimeter wave transceiving assembly based on high temperature pressure-free seamless sintering technology according to claim 3, it is characterized in that, 25um spun gold Direct Bonding is adopted to connect between all adjacent mmic chips and aluminium sesquioxide substrate, it is achieved product size 53mm*41mm*18mm.
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Cited By (5)
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| CN106881160A (en) * | 2017-05-03 | 2017-06-23 | 山东大学 | A kind of candida albicans bacterium micro-fluidic chip |
| CN107645849A (en) * | 2017-09-19 | 2018-01-30 | 安徽华东光电技术研究所 | A kind of preparation method of microwave excitation high-frequency model |
| CN109428666A (en) * | 2017-09-04 | 2019-03-05 | 王红彦 | A kind of electromagnetic signal screening arrangement |
| CN115978403A (en) * | 2022-12-20 | 2023-04-18 | 南京才华科技集团有限公司 | Millimeter wave servomotor mounting bracket |
| CN116647249A (en) * | 2023-07-27 | 2023-08-25 | 上海瀚儒通信技术有限公司 | Modularized intelligent signal shielding device unit, shielding device and shielding control method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106881160A (en) * | 2017-05-03 | 2017-06-23 | 山东大学 | A kind of candida albicans bacterium micro-fluidic chip |
| CN109428666A (en) * | 2017-09-04 | 2019-03-05 | 王红彦 | A kind of electromagnetic signal screening arrangement |
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| CN115978403A (en) * | 2022-12-20 | 2023-04-18 | 南京才华科技集团有限公司 | Millimeter wave servomotor mounting bracket |
| CN115978403B (en) * | 2022-12-20 | 2023-10-20 | 南京才华科技集团有限公司 | Millimeter wave servomotor mounting rack |
| CN116647249A (en) * | 2023-07-27 | 2023-08-25 | 上海瀚儒通信技术有限公司 | Modularized intelligent signal shielding device unit, shielding device and shielding control method |
| CN116647249B (en) * | 2023-07-27 | 2023-10-20 | 上海瀚儒通信技术有限公司 | Modularized intelligent signal shielding device unit, shielding device and shielding control method |
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