CN103152066B - Multi-chip integrated E band reception module - Google Patents

Abstract

The invention discloses a multi-chip integrated E-band receiving module, which comprises a metal upper base and a metal lower base, and a cavity formed by the metal upper base and the metal lower base is respectively provided with an intermediate frequency low-pass filter circuit, a local oscillator circuit and Down-conversion structure; IF input adopts standard SMA connector, local oscillator input adopts standard waveguide flange structure, and RF output end adopts standard waveguide flange structure. The signal coupling between the waveguide and the microstrip circuit in the module is realized through a transition structure, and the low-loss substrate circuit and various functional gallium arsenide chips are electrically connected through gold wire bonding. Based on the multi-chip integration technology, the invention has the characteristics of compact structure and high integration; meanwhile, it has the characteristics of low cost, good consistency and convenient scale manufacturing.

Description

Multi-chip integrated E-band receiver module

technical field

The invention relates to the technical field of wireless communication, in particular to a multi-chip integrated E-band receiving module.

Background technique

Microwave is a common wireless communication technology. It is widely used in the relay and backhaul of various communication systems due to its long-distance, large capacity, fast deployment, and strong damage resistance. With the continuous mobile broadband bearer demand, conventional microwave spectrum resources from 6GHz to 38GHz have been rapidly exhausted, and it has become an inevitable trend for microwave communication to expand to higher frequency bands. The E-band microwave was released by the International Telecommunications Union Radio Organization (ITU-R) in 2001 and 2003, mainly including 60GHz and 80GHz high-frequency microwave communications. The 60GHz free frequency band was earlier used by the military and industry customers. For business operators, the 80GHz microwave frequency band will be an important means of wireless transmission.

The E-band microwave frequency band is composed of 71G-76G/81G-86G spectrum resources. It is not only the highest transmission frequency band released in the field of civil microwave communication, but also the largest channel interval among the spectrum resources issued by ITU-R at one time so far. As can be seen from Figure 1, the 80GHz E-band frequency band has a 10GHz transceiver interval (TR interval) and a total of 5GHz modulating bandwidth. Calculated according to the most basic transmission capability of 1bit at 1Hz, the frequency bandwidth of 5GHz makes high-speed transmission at the Gbit (Gbps) level possible, which was not possible with conventional low-frequency microwaves in the past.

The E-band has a wider adjustable channel spacing, so the microwave communication system in the E-band frequency band naturally has the ability to transmit more than G bits of business capacity. Taking the definition of the 80GHz frequency band by the European Electronic Communications Commission (ECC) as an example, the minimum channel spacing recommended by it is 250MHz, and the entire 5GHz available modulation frequency band is divided into 19 sub-frequency bands. The channel spacing used for transmitting services can be Combination of 1 to 4 sub-bands of 250MHz. When at most 4 sub-bands of 250MHz are combined, the adjustable channel spacing can reach 1GHz at most. After adopting a certain higher-order modulation method, E-band microwave can achieve 1-5Gbps high-capacity transmission.

In recent years, with the development of wireless communication networks from GSM and UMTS to LTE, the demand for bearer bandwidth required by the backhaul network has increased significantly. For telecom operators, the application of E-band microwaves undoubtedly expands the frequency resources that are tight for wireless transmission, especially for LTE base stations that will be deployed in large numbers in the future, E-band can meet their ultra-large bandwidth bearing requirements with wider spectrum resources . At present, many countries have released restrictions on the use of E-band frequency bands, and countries have begun to develop and test E-band microwaves for wireless next-generation wireless backhaul networks. The current difficulty in application is mainly due to the low integration of the millimeter wave module, resulting in complex system circuits and large volume, which affects the overall performance.

Contents of the invention

Purpose of the invention: The present invention provides an E-band receiving module based on multi-chip integration technology, which is used as an E-band radio frequency receiving front end. It realizes the down-conversion function from the E-band to the X-band in one module, which can overcome the disadvantages of low integration of millimeter-wave modules, complex system circuits, and large volume in the prior art.

Technical solution: A multi-chip integrated E-band receiving module, including a circuit and an external packaging box, the external packaging box includes a metal upper base and a metal lower base; the cavities formed by the metal upper base and the metal lower base are respectively Set SMA to microstrip transition and intermediate frequency low-pass filter circuit, referred to as the first circuit; local oscillator circuit, including local oscillator amplifier chip, microstrip coupling transmission line, microstrip waveguide transition structure, bonding gold wire and DC bias circuit; Frequency conversion circuit, including microstrip waveguide transition structure, low-noise amplifier chip, down-mixing chip, bonding gold wire and DC bias circuit; the output end of the first circuit is connected to the intermediate frequency input end of the down-conversion circuit, and the local oscillator of the down-conversion circuit The input end is connected to the output end of the local oscillator circuit; each circuit on the substrate and each functional chip are electrically connected by bonding gold wires;

A DC power circuit board is arranged in the cavity at the bottom of the metal lower base, and the DC power circuit is connected to the first DC bias circuit and the second DC bias circuit through DC insulators respectively; the DC power circuit and the third DC bias circuit are connected through DC The insulators are connected.

The sides of the cavity composed of the metal upper base and the metal lower base are respectively provided with the intermediate frequency input end of the standard SMA connector, the local oscillator input end of the standard waveguide flange structure, and the RF output end of the standard waveguide flange structure.

The metal upper base and the metal lower base are made of copper, aluminum or other metal materials, which are first precision CNC milled by a precision machine tool, and then plated with gold or silver on the surface; the two are connected by positioning pins.

The first circuit is a transition from SMA to microstrip and an intermediate frequency low-pass filter circuit, with a passband of DC to 18 GHz.

Local oscillator circuit The input and output ends of the local oscillator amplifier chip body are electrically connected through the bonded gold wire, the microstrip coupling transmission line and the waveguide microstrip transition;

The DC terminal on one side of the local oscillator amplifier chip body is electrically connected to the chip capacitor by the bonded gold wire, and the chip capacitor is electrically connected to the DC bias circuit by the bonded gold wire, and the DC bias circuit is realized by the bonded gold wire and the DC insulator Electrical connection; the electrical connection on the other side of the amplifier chip body is the same as the connection above.

In the down-conversion circuit, the local oscillator input terminal of the down-mixing chip is electrically connected to the microstrip coupling transmission line through the bonded gold wire; the RF input terminal of the down-mixing chip is electrically connected to the low-noise amplifier chip through the bonded gold wire; the down-mixing The intermediate frequency output end of the chip is electrically connected to the intermediate frequency low-pass filter circuit through the bonding gold wire; the input end and output end of the low-noise amplifier chip are electrically connected to the microstrip waveguide transition and the down-mixing chip through the bonding gold wire, respectively;

The DC terminal on one side of the low-noise amplifier chip is electrically connected to the chip capacitor by the bonded gold wire, the chip capacitor is electrically connected to the DC bias circuit by the bonded gold wire, and the DC bias circuit is electrically connected to the DC insulator by the bonded gold wire; The electrical connection of the DC terminal on the other side of the low-noise amplifier chip is the same as the above-mentioned connection method.

The microstrip waveguide transition structure includes a fan-shaped probe and an output waveguide structure. The output waveguide structure includes a step-down waveguide and a standard waveguide. The microstrip waveguide transition structure has broadband characteristics and covers a frequency range of 70GHz to 90GHz.

The thickness of the substrates of the low-pass filter circuit, the microstrip coupling transmission line, the microstrip waveguide transition structure and the low-noise amplifier chip is 127-254 μm, and the materials used are composite dielectric substrates, ceramic substrates or quartz substrates.

The present invention adopts the above-mentioned technical scheme and has the following beneficial effects: the present invention is based on multi-chip technology and has the characteristics of compact structure and high integration. cables and test equipment. The adopted down-mixing transmitting function is respectively realized by down-mixing chip, low-noise amplifier chip and waveguide transition, which has the characteristics of low cost, good consistency and convenient scale manufacturing. The invention has the characteristics of good port performance. When designing the output circuit, the port matching and the cooperative design of other circuit structures are considered comprehensively, so that the standing wave of the port is obviously weakened, and the port performance is greatly improved.

Description of drawings

FIG. 1 is a schematic diagram of microwave communication frequency bands suggested by ITU-R in the prior art;

Fig. 2 is a schematic diagram of a three-dimensional structure of the first placement state according to an embodiment of the present invention;

3 is a schematic diagram of a three-dimensional structure of a second placement state according to an embodiment of the present invention;

Fig. 4 is a top view of the metal lower base of the embodiment of the present invention;

Fig. 5 is the bottom view of the metal lower base of the embodiment of the present invention;

6 is a schematic structural diagram of a local oscillator circuit according to an embodiment of the present invention;

FIG. 7 is a schematic structural diagram of a down-mixing chip of a down-conversion circuit according to an embodiment of the present invention.

Detailed ways

Below in conjunction with specific embodiment, further illustrate the present invention, should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention, after having read the present invention, those skilled in the art will understand various equivalent forms of the present invention All modifications fall within the scope defined by the appended claims of the present application.

As shown in Fig. 2, Fig. 3, Fig. 4 and Fig. 5, this embodiment includes a metal upper base 61 and a metal lower base 62, and the cavity formed by the metal upper base 61 and the metal lower base 62 is respectively provided with a first part SMA to microstrip transition 1 and intermediate frequency low-pass filter circuit 2, referred to as the first circuit; local oscillator circuit, including local oscillator amplifier chip 4, microstrip waveguide transition structure 42, microstrip coupling transmission line 41, bonding gold wire and the first direct A current bias circuit 71 and a second DC bias circuit 72; a down-conversion circuit, including a microstrip waveguide transition structure 42, a low-noise amplifier chip 5, a down-mixing chip 3, a bonding gold wire, and a third DC bias circuit 73. The intermediate frequency port of the module is a standard SMA connector 65, the RF and local oscillator ports are standard waveguide flange structures 63 and 64, and the circuit on the substrate is electrically connected to each functional millimeter-wave gallium arsenide chip through gold wire bonding.

A DC power supply circuit board 81 is provided in the cavity 8 at the bottom of the metal lower base 62, and the DC power supply circuit 81 is connected to the first DC bias circuit 71 and the second DC bias circuit 72 respectively through a DC insulator 494; the DC power supply circuit 81 It is connected with the third DC bias circuit 73 through a DC insulator 494 . The metal upper base 61 and the metal lower base 62 are connected by positioning pins 91 and 92 .

In this embodiment, the metal upper base 61 and the metal lower base 62 are obtained by CNC Milling (Computerized Numerical Control Milling). The metal upper base 61 and the metal lower base 62 are made of copper. In other embodiments, aluminum or other metal materials can be selected. Firstly, the precision CNC milling is performed by a precision machine tool, and then the surface is plated with gold or silver.

As shown in FIG. 6 , the local oscillator circuit in this embodiment includes a local oscillator amplifier chip body 4 , a waveguide microstrip transition structure 42 and a microstrip coupling transmission line 41 . The input end and the output end of the local oscillator amplifier chip 4 are respectively electrically connected to the microstrip coupling transmission line 41 and the waveguide microstrip transition structure 42 through the bonding gold wire 43; Respectively realize electrical connection with the first chip capacitor 47 and the second chip capacitor 48, and the above-mentioned chip capacitor is respectively electrically connected with the second DC bias circuit 72 by the bonding gold wire 43, and the second DC bias circuit 72 is connected by the bonding gold wire 43 It is electrically connected with the DC insulator 494 ; the electrical connection between the other side of the amplifier chip body 4 and the first DC bias circuit 71 is the same as the connection method described above. The DC insulator 494 is connected to the DC power supply board 81 in the cavity 8 at the bottom of the metal lower base 62 .

As shown in FIG. 7 , the down-conversion circuit in this embodiment mainly includes a down-mixing chip 3 , a low-noise amplifier chip 5 and a microstrip waveguide transition 42 . The local oscillator input end of the lower frequency mixing chip 3 is electrically connected to the microstrip coupling transmission line 41 through the bonding gold wire 43; the radio frequency input end of the lower frequency mixing chip 3 is electrically connected to the low noise amplifier chip 5 through the bonding gold wire 43; The intermediate frequency output end of the frequency mixing chip 3 is electrically connected to the intermediate frequency low-pass filter circuit 2 through the bonding gold wire 43; frequency chip 3 to realize electrical connection;

The DC terminal on one side of the low-noise amplifier chip 5 is electrically connected to the first chip capacitor 47 and the second chip capacitor 48 by the bonding gold wire 43, and the chip capacitor is electrically connected to the third DC bias circuit 73 by the bonding gold wire 43 The third DC bias circuit 73 is electrically connected by the bonding gold wire 43 and the DC insulator 494; the electrical connection between the other side of the low-noise amplifier chip 5 and the second DC bias circuit 72 is the same as the connection method described above. The DC insulator 494 is connected to the DC power supply board 81 in the cavity 8 at the bottom of the metal lower base 62 .

In this embodiment, the manufacturing process of the low-pass filter circuit 2, the microstrip coupling transmission line 41 and the microstrip waveguide transition 42 is made by etching on a low-loss dielectric material with a thickness of 127-254 μm, and then the surface is gold-plated and drilled. , die and other processes to obtain. The frequency mixing chip 3, the low-noise amplifier chip 5 and the amplifier chip body 4 of this embodiment are gallium arsenide chips, and gallium nitride, indium phosphide chips or silicon-based chips can also be used according to the application. A suitable type of chip can be produced to achieve better mixing and receiving performance.

The electrical characteristics of this embodiment are: the input radio frequency signal frequency range is 70GHz-80GHz, the intermediate frequency output frequency range is 0GHz-10GHz, and the input local oscillator signal power is 0dBm;

Another electrical characteristic of this embodiment is: the frequency range of the input radio frequency signal is 80 GHz-90 GHz, the frequency range of the intermediate frequency output is 0 GHz-10 GHz, and the input power of the local oscillator signal is 0 dBm.

Preferably, the power supply voltage required by the entire module is less than 5V, and the power supply current is less than 200mA.

Claims (9)

1. A multi-chip integrated E-band receiving module, including an external packaging box, the external packaging box includes a metal upper base (61) and a metal lower base (62); it is characterized in that, A circuit is provided in the cavity formed by the metal upper base (61) and the metal lower base (62), and the circuit includes an SMA to microstrip transition (1) and an intermediate frequency low-pass filter circuit (2), a local oscillator circuit and a lower A frequency conversion circuit; where the SMA to microstrip transition (1) and the intermediate frequency low-pass filter circuit (2) are referred to as the first circuit for short; The local oscillator circuit includes a local oscillator amplifier chip (4), a microstrip coupling transmission line (41), a microstrip waveguide transition structure (42), a bonding gold wire, a first DC bias circuit (71) and a second DC bias circuit setting circuit (72); The down-conversion circuit includes a microstrip waveguide transition structure (42), a low-noise amplifier chip (5), a down-mixing chip (3), a bonding gold wire, and a third DC bias circuit (73); the first circuit The output end of the down-conversion circuit is connected to the intermediate frequency input end of the down-conversion circuit, and the local oscillator input end of the down-conversion circuit is connected to the output end of the local oscillator circuit; The bottom cavity (8) of the metal lower base (62) is provided with a DC power supply circuit board (81), and the DC power supply circuit (81) is connected with the first DC bias circuit (71) and the second DC bias circuit. The setting circuits (72) are respectively connected through DC insulators; the DC power supply circuit (81) and the third DC bias circuit (73) are connected through DC insulators. 2. The multi-chip integrated E-band receiving module according to claim 1, characterized in that standard SMA connectors (65 ), the local oscillator input end of the standard waveguide flange structure (63), and the radio frequency output end of the standard waveguide flange structure (64). 3. The multi-chip integrated E-band receiving module according to claim 1, characterized in that: the metal upper base (61) and the metal lower base (62) are positioned by the first positioning pin (91) and the second positioning pin pin (92) connection. 4. The multi-chip integrated E-band receiving module according to claim 1, characterized in that: the metal upper base (61) and the metal lower base (62) are made of copper or aluminum, and firstly made by a precision machine tool Do precision CNC milling, and then gold or silver plating on the surface. 5. The multi-chip integrated E-band receiving module according to claim 1, characterized in that: the first circuit is an SMA-to-microstrip transition (1) and an intermediate frequency low-pass filter circuit (2), with a passband of DC to 18 GHz. 6. The multi-chip integrated E-band receiving module according to claim 1, characterized in that: the input end and output end of the local oscillator amplifier chip body (4) of the local oscillator circuit are respectively connected to a microstrip coupling transmission line through a bonded gold wire (41) is electrically connected with the microstrip waveguide transition structure (42); The DC terminal on one side of the local oscillator amplifier chip body (4) is electrically connected to the first chip capacitor (47) and the second chip capacitor (48) respectively by bonding gold wires, and the first chip capacitor (47) and the second chip capacitor (47) are electrically connected to each other. The chip capacitor (48) is electrically connected to the second DC bias circuit (72) by the bonding gold wire, and the second DC bias circuit (72) is electrically connected to the DC insulator by the bonding gold wire; the amplifying chip body ( 4) The electrical connection between the other side and the first DC bias circuit (71) is the same as the above connection method. 7. The multi-chip integrated E-band receiving module according to claim 1, characterized in that: the local oscillator input end of the down-mixing chip (3) in the down-conversion circuit is coupled with a microstrip transmission line ( 41) Realize electrical connection; The radio frequency input end of the down-mixing chip (3) is electrically connected to the low-noise amplifier chip (5) through a bonding gold wire; the intermediate frequency output end of the down-mixing chip (3) is connected to the intermediate frequency low-pass The filter circuit (2) realizes electrical connection; The input end and the output end of the low-noise amplifier chip (5) are electrically connected to the microstrip waveguide transition (42) and the down-mixing chip (3) respectively through bonding gold wires; The DC terminal on one side of the low-noise amplifier chip (5) is electrically connected to the third chip capacitor (49) by the bonding gold wire, and the third chip capacitor (49) is connected to the third DC bias circuit (73) by the bonding gold wire. ) to realize electrical connection, and the third DC bias circuit (73) is electrically connected to the DC insulator by bonding gold wire; the electrical connection between the other side and the second DC bias circuit (72) is the same as the above connection method. 8. The multi-chip integrated E-band receiving module according to claim 1, characterized in that: the microstrip waveguide transition structure includes a fan-shaped probe and an output waveguide structure, and the microstrip waveguide transition structure has broadband characteristics and covers 70 GHz ~90GHz frequency range. 9. The multi-chip integrated E-band receiving module according to claim 1, characterized in that: the low-pass filter circuit (2), microstrip coupling transmission line (41), microstrip waveguide transition structure (42), low-noise The thickness of the substrate of the amplifying chip (5) is 127-254 μm, and the material used is a composite dielectric substrate, a ceramic substrate or a quartz substrate.