CN103152066B - Multi-chip integrated E band reception module - Google Patents
Multi-chip integrated E band reception module Download PDFInfo
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- CN103152066B CN103152066B CN201310036833.9A CN201310036833A CN103152066B CN 103152066 B CN103152066 B CN 103152066B CN 201310036833 A CN201310036833 A CN 201310036833A CN 103152066 B CN103152066 B CN 103152066B
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Abstract
The invention discloses a kind of multi-chip integrated E band reception module, comprise metal top base and metal bottom base, in the cavity that metal top base and metal bottom base are formed, mid-frequency low-pass filter circuit, local oscillation circuit and down-conversion structure are set respectively; IF input terminal adopts standard sub-miniature A connector, and local oscillator input is standard waveguide flange arrangement, and radio-frequency (RF) output end is standard waveguide flange arrangement.Signal coupling in this module between waveguide and microstrip circuit is realized by transition structure, and low-loss substrate circuit and each function gallium arsenide chips realize electrical connection by gold wire bonding.The present invention is based on multi-chip integrated technology, there is compact conformation, feature that integrated level is high; Have cost low, consistency is good simultaneously, is convenient to the feature of scale manufacturing.
Description
Technical field
The present invention relates to wireless communication technology field, particularly relate to a kind of multi-chip integrated E band reception module.
Background technology
Microwave is common wireless communication technology, and, Large Copacity remote with it, the feature that deployment is quick, damage-retardation is strong are widely used in relaying and the passback of various types of communication system.The carrying demand of mobile broadband continued, the microwave spectrum resource of conventional 6GHz ~ 38GHz has been consumed totally, and microwave communication becomes inexorable trend to more high band expansion.E band microwave as far back as calendar year 2001 and 2003 issue by the wireless tissue of International Telecommunication Association (ITU-R), mainly comprise the high band microwave communication of 60GHz and 80GHz, the free frequency range of 60GHz is comparatively early that the military and industry customer use, concerning operator, 80GHz microwave frequency band will be important wireless transmission means.
E band microwave frequency range is made up of 71G ~ 76G/81G ~ 86G frequency spectrum resource, and being the highest transmission frequency range that current civilian field of microwave communication is issued, is also that in the frequency spectrum resource of the disposable granting of ITU-R up to now, channel spacing is once maximum.As can be seen from Figure 1,80GHz E wave band frequency range has the transmit receive separation (TR interval) of 10GHz, and altogether 5GHz can modulation bandwidth.Transmit the so the most basic transfer capability of 1bit according to 1Hz to calculate, the frequency bandwidth of 5GHz makes G bit (Gbps) level high rate data transmission become possibility, and this is that the microwave of conventional low-frequency range cannot realize.
E wave band has the wider channel spacing modulated, therefore the natural ability with the above volume of business of transmission G bit of the microwave telecommunication system of E wave band frequency range.With European electronic communications committee (ECC), example is defined as to 80GHz frequency range, the minimum channel spacing of its suggestion is 250MHz, the available modulation frequency range of whole 5GHz is drawn and has been divided into 19 frequency sub-band, the channel spacing used during transport service can be the combination of 1 ~ 4 250MHz frequency sub-band, when maximum 4 250MHz frequency sub-band are combined, adjustable channel spacing is maximum can reach 1GHz, after adopting certain more high-order modulating, E band microwave can realize the high power capacity transmission of 1 ~ 5Gbps.
In recent years, along with cordless communication network develops into LTE from GSM, UMTS, the carrying bandwidth demand required for return network increases substantially.For telecom operators, the frequency resource of wireless transmission anxiety has been widened in the application of E band microwave undoubtedly, and particularly for the following a large amount of LTE base station of disposing of wireless network, E wave band can meet the carrying demand of its super large bandwidth with wider frequency spectrum resource.At present, many countries have opened the use restriction of E wave band frequency range, and various countries start to carry out E band microwave one after another for the development of wireless wireless backhaul network of future generation and test.The difficulty that current application faces mainly is that the integrated level of millimeter wave module is low, and cause circuit system complicated, volume is large, thus affects overall performance.
Summary of the invention
Goal of the invention: the invention provides a kind of E band reception module based on multi-chip integrated technology, be used as E waveband radio frequency receiving front-end.It is in a module, achieve the frequency down-conversion function of E wave band to X-band, can overcome in prior art that millimeter wave module integration degree is low, circuit system is complicated, bulky deficiency.
Technical scheme: a kind of multi-chip integrated E band reception module, comprises circuit and outer enclosure box body, and outer enclosure box body comprises metal top base and metal bottom base; SMA is set respectively to microstrip transition and mid-frequency low-pass filter circuit, referred to as the first circuit in the cavity that metal top base and metal bottom base are formed; Local oscillation circuit, comprises local oscillator amplification chip, microstrip coupled transmission line, micro-band waveguide transition structure, bonding gold wire and DC bias circuit; Lower frequency changer circuit, comprises micro-band waveguide transition structure, LNA large chip, lower mixing chip, bonding gold wire and DC bias circuit; The output of the first circuit connects the IF input terminal of lower frequency changer circuit, and the local oscillator input of lower frequency changer circuit connects the output of local oscillation circuit; On substrate, each circuit and each functional chip realize being electrically connected by bonding gold wire;
Be provided with DC power supply circuit plate in metal bottom base bottom cavity, DC power supply circuit is connected respectively by DC Insulator with the second DC bias circuit with the first DC bias circuit; DC power supply circuit is connected by DC Insulator with the 3rd DC bias circuit.
The cavity side of metal top base and metal bottom base composition arranges the radio-frequency (RF) output end of the IF input terminal of standard sub-miniature A connector, the local oscillator input of standard waveguide flange arrangement and standard waveguide flange arrangement respectively.
Metal top base and metal bottom base are made up of copper, aluminium or other metal materials, first do accurate digital control milling by precision machine tool, then at surface gold-plating or silver; Both are connected by alignment pin.
First circuit is that SMA arrives microstrip transition and mid-frequency low-pass filter circuit, passband DC ~ 18 GHz.
The input of local oscillation circuit local oscillator amplification chip body and output realize being electrically connected respectively by bonding gold wire and microstrip coupled transmission line and Waveguide-microbelt transition;
The DC terminal of local oscillator amplification chip body side is realized being electrically connected with chip capacity by bonding gold wire respectively, chip capacity is realized being electrically connected with DC bias circuit by bonding gold wire respectively, and DC bias circuit is realized being electrically connected by bonding gold wire and DC Insulator; The electrical connection situation of amplification chip body opposite side is identical with above-mentioned connected mode.
In lower frequency changer circuit, the local oscillator input of lower mixing chip realizes being electrically connected by bonding gold wire and microstrip coupled transmission line; The rf inputs of lower mixing chip realizes being electrically connected by bonding gold wire and LNA large chip; The medium frequency output end of lower mixing chip realizes being electrically connected by bonding gold wire and mid-frequency low-pass filter circuit; The input of LNA large chip and output realize being electrically connected respectively by bonding gold wire and micro-band waveguide transition and lower mixing chip;
The DC terminal of LNA large chip side is realized being electrically connected by bonding gold wire and chip capacity, and chip capacity is realized being electrically connected by bonding gold wire and DC bias circuit, and DC bias circuit is realized being electrically connected by bonding gold wire and DC Insulator; The electrical connection situation of LNA large chip opposite side DC terminal is identical with above-mentioned connected mode.
Micro-band waveguide transition structure comprises fan-shaped probe and output waveguide structure, and output waveguide structure comprises falls high waveguide and standard waveguide, and described micro-band waveguide transition structure has broadband character, covers 70GHz ~ 90GHz frequency range.
The thickness of the substrate of low-pass filter circuit, microstrip coupled transmission line, micro-band waveguide transition structure and LNA large chip is 127 ~ 254 μm, and material therefor is complex media substrate, ceramic substrate or quartz substrate.
The present invention adopts technique scheme, have following beneficial effect: the present invention is based on multi-chip technology, have compact conformation, feature that integrated level is high, input adopts standard sub-miniature A connector, output adopts standard flange, is easy to external all kinds of test cable and testing equipment.The lower mixing emission function adopted is realized by lower mixing chip, LNA large chip and waveguide transition respectively, and have cost low, consistency is good, is convenient to the feature of scale manufacturing.The present invention has the good feature of port performance, and when carrying out designing circuitry, considering the collaborative design of port match and other circuit structure, obviously reducing port standing wave, port performance significantly improves.
Accompanying drawing explanation
Fig. 1 is the microwave communication frequency range schematic diagram of ITU-R suggestion in prior art;
Fig. 2 is the first laying state three-dimensional structure schematic diagram of the embodiment of the present invention;
Fig. 3 is the second laying state three-dimensional structure schematic diagram of the embodiment of the present invention;
Fig. 4 is the vertical view of the metal bottom base of the embodiment of the present invention;
Fig. 5 is the upward view of the metal bottom base of the embodiment of the present invention;
Fig. 6 is the local oscillation circuit structural representation of the embodiment of the present invention;
Fig. 7 is mixing chip structure schematic diagram under the lower frequency changer circuit of the embodiment of the present invention.
Embodiment
Below in conjunction with specific embodiment, illustrate the present invention further, these embodiments should be understood only be not used in for illustration of the present invention and limit the scope of the invention, after having read the present invention, the amendment of those skilled in the art to the various equivalent form of value of the present invention has all fallen within the application's claims limited range.
As shown in Fig. 2, Fig. 3, Fig. 4 and Fig. 5, the present embodiment comprises metal top base 61 and metal bottom base 62, in the cavity that metal top base 61 and metal bottom base 62 are formed, Part I SMA is set respectively to microstrip transition 1 and mid-frequency low-pass filter circuit 2, is called for short the first circuit; Local oscillation circuit, comprises local oscillator amplification chip 4, micro-band waveguide transition structure 42, microstrip coupled transmission line 41, bonding gold wire and the first DC bias circuit 71 and the second DC bias circuit 72; Lower frequency changer circuit, comprises micro-band waveguide transition structure 42, LNA large chip 5, lower mixing chip 3 and bonding gold wire and the 3rd DC bias circuit 73.Module intermediate frequency port is standard sub-miniature A connector 65, and radio frequency and local oscillator port are standard waveguide flange arrangement 63 and 64, and circuits on substrates and each function millimeter wave gallium arsenide chips realize being electrically connected by gold wire bonding.
Be provided with DC power supply circuit plate 81 in metal bottom base 62 bottom cavity 8, DC power supply circuit 81 is connected respectively by DC Insulator 494 with the second DC bias circuit 72 with the first DC bias circuit 71; DC power supply circuit 81 is connected by DC Insulator 494 with the 3rd DC bias circuit 73.Metal top base 61 is connected with 92 by alignment pin 91 with metal bottom base 62.
In the present embodiment, metal top base 61 and metal bottom base 62 are obtained by the mode of accurate digital control milling (CNC Milling, ComputerizedNumericalControl Milling).Metal top base 61 and metal bottom base 62 are made of copper, and can select aluminium or other metal materials in other embodiments, and first do accurate digital control milling by precision machine tool, then surface gold-plating or silver obtain.
As shown in Figure 6, local oscillation circuit described in the present embodiment comprises local oscillator amplification chip body 4, Waveguide-microbelt transition structure 42 and microstrip coupled transmission line 41.The input of local oscillator amplification chip 4 and output realize being electrically connected respectively by bonding gold wire 43 and microstrip coupled transmission line 41 and Waveguide-microbelt transition structure 42; The DC terminal of local oscillator amplification chip body 4 side is realized being electrically connected with the first chip capacity 47 and the second chip capacity 48 by bonding gold wire 43 respectively, said chip electric capacity is realized being electrically connected with the second DC bias circuit 72 by bonding gold wire 43 respectively, and the second DC bias circuit 72 is realized being electrically connected by bonding gold wire 43 and DC Insulator 494; Amplification chip body 4 opposite side is identical with above-mentioned connected mode with the electrical connection situation of the first DC bias circuit 71.DC Insulator 494 is connected with direct current source plate 81 in metal bottom base 62 bottom cavity 8.
As shown in Figure 7, lower frequency changer circuit described in the present embodiment, mainly comprises lower mixing chip 3, LNA large chip 5 and micro-band waveguide transition 42.The local oscillator input of lower mixing chip 3 realizes being electrically connected by bonding gold wire 43 and microstrip coupled transmission line 41; The rf inputs of lower mixing chip 3 realizes being electrically connected by bonding gold wire 43 and LNA large chip 5; The medium frequency output end of lower mixing chip 3 realizes being electrically connected by bonding gold wire 43 and mid-frequency low-pass filter circuit 2; The input of LNA large chip 5 and output realize being electrically connected respectively by bonding gold wire 43 and micro-band waveguide transition 42 and lower mixing chip 3;
The DC terminal of LNA large chip 5 side is realized being electrically connected by bonding gold wire 43 and the first chip capacity 47 and the second chip capacity 48, said chip electric capacity is realized being electrically connected by bonding gold wire 43 and the 3rd DC bias circuit 73, and the 3rd DC bias circuit 73 is realized being electrically connected by bonding gold wire 43 and DC Insulator 494; LNA large chip 5 opposite side is identical with above-mentioned connected mode with the electrical connection situation of the second DC bias circuit 72.DC Insulator 494 is connected with direct current source plate 81 in metal bottom base 62 bottom cavity 8.
In the present embodiment, the manufacture craft of low-pass filter circuit 2, microstrip coupled transmission line 41 and micro-band waveguide transition 42 selects etching mode to be that the low-loss dielectric material of 127 ~ 254 μm is made at thickness, obtains by operations such as surface gold-plating, punching, punch dies.The mixing chip 3 of the present embodiment, LNA large chip 5 and amplification chip body 4 are gallium arsenide chips, also gallium nitride, indium phosphide chip or silicon base chip can be adopted according to application, according to specific targets requirement, suitable type chip can be optimized, thus realize better mixing receptivity.
The electric characteristic of this embodiment is: input radio frequency signal frequency range 70GHz ~ 80GHz, intermediate frequency reference frequency output 0GHz ~ 10GHz, input local oscillation signal power 0dBm;
The another kind of electric characteristic of this embodiment is: input radio frequency signal frequency range 80GHz ~ 90GHz, intermediate frequency reference frequency output 0GHz ~ 10GHz, input local oscillation signal power 0dBm.
As preferably, needed for whole module, supply voltage is less than 5V, and source current is less than 200mA.
Claims (9)
1. a multi-chip integrated E band reception module, comprises outer enclosure box body, and outer enclosure box body comprises metal top base (61) and metal bottom base (62); It is characterized in that,
Be provided with circuit in the cavity that metal top base (61) and metal bottom base (62) are formed, described circuit comprises SMA to microstrip transition (1) and mid-frequency low-pass filter circuit (2), local oscillation circuit and lower frequency changer circuit; Wherein by SMA to microstrip transition (1) and mid-frequency low-pass filter circuit (2) referred to as the first circuit;
Described local oscillation circuit comprises local oscillator amplification chip (4), microstrip coupled transmission line (41), micro-band waveguide transition structure (42), bonding gold wire and the first DC bias circuit (71) and the second DC bias circuit (72);
Described lower frequency changer circuit comprises micro-band waveguide transition structure (42), LNA large chip (5), lower mixing chip (3), bonding gold wire and the 3rd DC bias circuit (73); The output of described first circuit connects the IF input terminal of lower frequency changer circuit, and the local oscillator input of lower frequency changer circuit connects the output of local oscillation circuit;
Be provided with DC power supply circuit plate (81) in described metal bottom base (62) bottom cavity (8), described DC power supply circuit (81) is connected respectively by DC Insulator with the second DC bias circuit (72) with the first DC bias circuit (71); DC power supply circuit (81) is connected by DC Insulator with the 3rd DC bias circuit (73).
2. multi-chip according to claim 1 integrated E band reception module, is characterized in that: the cavity side that described metal top base (61) and metal bottom base (62) form arranges the radio-frequency (RF) output end of the IF input terminal of standard sub-miniature A connector (65), the local oscillator input of standard waveguide flange arrangement (63) and standard waveguide flange arrangement (64) respectively.
3. multi-chip according to claim 1 integrated E band reception module, is characterized in that: described metal top base (61) is connected with the second alignment pin (92) by the first alignment pin (91) with metal bottom base (62).
4. multi-chip according to claim 1 integrated E band reception module, is characterized in that: described metal top base (61) and metal bottom base (62) are made up of copper or aluminium, and first does accurate digital control milling by precision machine tool, then at surface gold-plating or silver.
5. multi-chip according to claim 1 integrated E band reception module, is characterized in that: described first circuit is that SMA arrives microstrip transition (1) and mid-frequency low-pass filter circuit (2), passband DC ~ 18 GHz.
6. multi-chip according to claim 1 integrated E band reception module, is characterized in that: the input of described local oscillation circuit local oscillator amplification chip body (4) and output realize being electrically connected respectively by bonding gold wire and microstrip coupled transmission line (41) and micro-band waveguide transition structure (42);
The DC terminal of described local oscillator amplification chip body (4) side is realized being electrically connected with the first chip capacity (47) and the second chip capacity (48) by bonding gold wire respectively, first chip capacity (47) and the second chip capacity (48) are realized being electrically connected with the second DC bias circuit (72) by bonding gold wire respectively, and the second DC bias circuit (72) is realized being electrically connected by bonding gold wire and DC Insulator; Described amplification chip body (4) opposite side is identical with above-mentioned connected mode with the electrical connection situation of the first DC bias circuit (71).
7. multi-chip according to claim 1 integrated E band reception module, is characterized in that: the local oscillator input of the lower mixing chip (3) in described lower frequency changer circuit realizes being electrically connected by bonding gold wire and microstrip coupled transmission line (41);
The rf inputs of described lower mixing chip (3) realizes being electrically connected by bonding gold wire and LNA large chip (5); The medium frequency output end of described lower mixing chip (3) realizes being electrically connected by bonding gold wire and mid-frequency low-pass filter circuit (2);
The input of described LNA large chip (5) and output realize being electrically connected respectively by bonding gold wire and micro-band waveguide transition (42) and lower mixing chip (3);
The DC terminal of described LNA large chip (5) side is realized being electrically connected by bonding gold wire and the 3rd chip capacity (49), 3rd chip capacity (49) is realized being electrically connected by bonding gold wire and the 3rd DC bias circuit (73), and the 3rd DC bias circuit (73) is realized being electrically connected by bonding gold wire and DC Insulator; Opposite side is identical with above-mentioned connected mode with the electrical connection situation of the second DC bias circuit (72).
8. multi-chip according to claim 1 integrated E band reception module, it is characterized in that: described micro-band waveguide transition structure comprises fan-shaped probe and output waveguide structure, described micro-band waveguide transition structure has broadband character, covers 70GHz ~ 90GHz frequency range.
9. multi-chip according to claim 1 integrated E band reception module, it is characterized in that: the substrate thickness of described low-pass filter circuit (2), microstrip coupled transmission line (41), micro-band waveguide transition structure (42), LNA large chip (5) is 127 ~ 254 μm, and material therefor is complex media substrate, ceramic substrate or quartz substrate.
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| CN201310036833.9A CN103152066B (en) | 2013-01-30 | 2013-01-30 | Multi-chip integrated E band reception module |
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| TWI566347B (en) * | 2014-03-24 | 2017-01-11 | 智原科技股份有限公司 | Integrated circuit |
| CN110166068A (en) * | 2018-02-13 | 2019-08-23 | 华为技术有限公司 | A kind of signal transmitting and receiving circuit |
| CN109150218B (en) * | 2018-10-12 | 2024-02-23 | 南京屹信航天科技有限公司 | Miniaturized ODU receiving channel module |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201536349U (en) * | 2009-10-28 | 2010-07-28 | 南京才华科技集团有限公司 | Up converter for Ka-band millimeter waves |
| CN102270965A (en) * | 2011-04-02 | 2011-12-07 | 华为技术有限公司 | Mixer circuit and local oscillation leakage suppression method for mixer circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8090411B2 (en) * | 2001-05-02 | 2012-01-03 | Trex Enterprises Corp | Wireless millimeter wave communication system |
| US7146136B2 (en) * | 2004-02-04 | 2006-12-05 | Northrop Grumman Corporation | E-band radio transceiver architecture and chip set |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201536349U (en) * | 2009-10-28 | 2010-07-28 | 南京才华科技集团有限公司 | Up converter for Ka-band millimeter waves |
| CN102270965A (en) * | 2011-04-02 | 2011-12-07 | 华为技术有限公司 | Mixer circuit and local oscillation leakage suppression method for mixer circuit |
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