CN105530026A - Miniature millimeter wave transceiver module - Google Patents
Miniature millimeter wave transceiver module Download PDFInfo
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- CN105530026A CN105530026A CN201510955978.8A CN201510955978A CN105530026A CN 105530026 A CN105530026 A CN 105530026A CN 201510955978 A CN201510955978 A CN 201510955978A CN 105530026 A CN105530026 A CN 105530026A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
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Abstract
The invention provides a miniature millimeter wave transceiver module. By improving the structure and the process, the defects of complex structure, huge volume, large debugging amount, low reliability and narrow communication frequency band of an existing millimeter wave transceiver module are solved, the miniature millimeter wave transceiver module with excellent performance is provided, and the miniature millimeter wave transceiver module is compact in structure, easy to debug, capable of effectively meeting the demands of millimeter wave communication systems with ultra wide bands and high speeds.
Description
Technical field
The invention belongs to millimetre-wave attenuator technical field, be specifically related to a kind of miniaturized millimeter wave transceiving assembly.
Background technology
Conversion between high-frequency signal and intermediate-freuqncy signal is mainly relied on millimeter wave transceiving assembly by millimeter wave wireless transceiver system, and it is the important component part of millimeter-wave communication system.Existing millimeter wave transceiving assembly all adopts conductive silver paste PCB printed board, mmic chip etc. to be pasted on aluminium matter shielding box body, connected by the microstrip line in PCB printed board between mmic chip, cause complex structure, bulky, debugging amount is large, reliability is low.Waveguide coaxial connecter adopts microstrip line transition simultaneously, by processing technology accuracy limitations, causes communication band narrow.The development of serious restriction millimetre-wave attenuator ultra broadband, two-forty and application.
Summary of the invention
Object of the present invention provides a kind of miniaturized millimeter wave transceiving assembly, by modified node method and technique, solve that existing millimeter wave transceiving modular construction is complicated, bulky, debugging amount is large, reliability is low, the narrow such shortcoming of communication band, a kind of miniaturized millimeter wave transceiving assembly of function admirable is provided, its compact conformation, be easy to debugging, effectively can meet the millimeter-wave communication system demand of ultra broadband, two-forty.
In order to overcome deficiency of the prior art, the invention provides a kind of solution of miniaturized millimeter wave transceiving assembly, specific as follows:
A kind of miniaturized millimeter wave transceiving assembly, specifically comprise shielding box body 202, local oscillator frequency multiplication link 101, power division link 4, receiver 103, a transmitting chain 104, local oscillator frequency multiplication link 101 connects with power division link 4, and power division link 4 is connected with transmitting chain 104 with receiver 103 respectively;
Described shielding box body 202 adopts 85:15 tungsten-copper alloy, its coefficient of expansion 7.3 is close with the MMIC substrate coefficient of expansion 7.5, surface gold-plating 3um, be convenient to high temperature pressure-free sintering, make MMIC substrate in sintering process not yielding, inner integrated local oscillator frequency multiplication link 101, power division link 4, receiver 103, transmitting chain 104, thus realize miniaturized;
Described power division link 4 adopts 99.6% alundum (Al2O3) substrate of dielectric constant 9.9, is convenient to be connected with other link bondings, and its coefficient of expansion is 7.5, is convenient to sinter with shielding box body;
Described local oscillator frequency multiplication link 101 comprises 50 ohm microstrip 16, frequency tripler 1, local oscillator band pass filter 2, this vibration magnifier 3, wherein frequency tripler 1 and this vibration magnifier 3 adopt the manufacture of MMIC process, and 50 ohm microstrip 16 and local oscillator band pass filter 2 adopt 99.6% alundum (Al2O3) substrate of dielectric constant 9.9;
Described receiver 103 comprises coaxial conversion 11,50 ohm microstrip 16, low noise amplifier 12, image-reject filter 13, gain amplifier 14, the low-converter 15 that receive waveguide probe, wherein low noise amplifier 12, gain amplifier 14 and low-converter 15 adopt the manufacture of MMIC process, and 50 ohm microstrip 16 and image-reject filter 13 adopt 99.6% alundum (Al2O3) substrate of dielectric constant 9.9;
Described transmitting chain 104 comprises coaxial conversion 10,50 ohm microstrip 16, power amplifier 9, driving amplifier 8, pre-amplifier 7, transmit band pass filter 6, the upconverter 5 of adopting transmit waveguide probe, its intermediate power amplifier 9, driving amplifier 8, pre-amplifier 7 and upconverter 5 adopt the manufacture of MMIC process, and 50 ohm microstrip 16 and transmit band pass filter 6 adopt 99.6% alundum (Al2O3) substrate of dielectric constant 9.9;
The coaxial conversion 10 of the transmit waveguide probe in the coaxial conversion 11 of the reception waveguide probe in described receiver 103 and transmitting chain 104, its waveguide mouth adopts standard BJ320 rectangular waveguide, for preventing leakage signal, improving receive-transmit isolation, rectangular waveguide and the integrated design of shielding box body, its probe 206 adopts the glass insulator 205 of diameter 0.3mm and the copper rod 204 high temperature sintering one of diameter 1.1mm, makes up machining defects, improves positioning precision, widens communication band.
Can see from above, the effect of 50 ohm microstrip 16 is connection, the switching of being convenient to radio-frequency (RF) coaxial circuit and microwave circuit.
Described high temperature pressure-free seamless sintering is uniformly dispersed on shielding box body 202 boss by solder 203 through high temperature, again MMIC201 and alundum (Al2O3) substrate 211 are put down gently on solder, do not need pressing, solder, through high temperature free diffusing, makes MMIC201 and alundum (Al2O3) substrate 211 and shielding box body 202 is seamless to splice.
Described probe 206 is through calculating, and the diameter 0.3mm length 2mm of theoretical value needed for inner wire diameter 1.1mm length 0.8mm, this theoretical value physical structure cannot machining.Now adopt high temperature sintering technique to splice integrated with gold-plated copper rod 204 for the glass insulator 205 of the prior art of inner wire diameter 0.3mm length 2.8mm, meet theoretical and practical application request.
To transmit leakage for reducing transmitting chain, improve transceiver insulation, waveguide mouth adopts integrated design with shielding box body, and this will cause great difficulty to probe assembling, adopt high temperature sintering technique to splice integrated with carrier briquetting 207 for probe 206, form probe carrier 208.Then probe carrier 208 is fixed to and completes on mmic chip and the seamless shielding box body 202 spliced of alundum (Al2O3) substrate, better solve probe assembling complexity problem.
Apply such scheme of the present invention, by adopting 85:15 tungsten-copper alloy shielding box body, heat conduction is fast, the coefficient of expansion and mmic chip, 99.6% alundum (Al2O3) substrate are close, are suitable for high temperature pressure-free seamless sintering, make mmic chip, alundum (Al2O3) substrate filter, 50 ohm microstrip, power division link ground connection is abundant, heat conduction is abundant, reduce parasitic disturbances, and it is shaping to meet all parts one-time process, reduces production link production cost and secondary damage; By adopting 25um spun gold Direct Bonding to connect adjacent mmic chip, no longer increasing any auxiliary union piece, greatly improving at different levels, each port match, reduced volume, reducing debugging amount, reducing link load, reducing parasitic disturbances, improving performance parameter; By adopting the probe waveguide transitions of glass insulator and copper rod high temperature sintering one, solve the processing technology of diameter 0.3mm length 2.8mm that machining cannot complete and the integrated metallic conductor of diameter 1.1mm length 0.8mm, widen communication band, effectively meet the millimeter-wave communication system demand of ultra broadband, two-forty.
Accompanying drawing explanation
Fig. 1 is theory diagram of the present invention.
Fig. 2 is circuit theory diagrams of the present invention.
Fig. 3 is inside of the present invention sintering layout.
Fig. 4 is mmic chip high temperature pressure-free seamless sintering process schematic representation of the present invention.
Fig. 5 is alumina-based plate high temperature pressure-free seamless sintering process schematic representation of the present invention.
Fig. 6 is probe sintering process schematic diagram of the present invention.
Fig. 7 is probe of the present invention sintering assembly technology schematic diagram.
Fig. 8 is that waveguide probe of the present invention coaxially changes assembly technology schematic diagram.
Embodiment
Below in conjunction with drawings and Examples, summary of the invention is described further:
In the prior art, this product adopts more mmic chip, and mmic chip all adopts the alundum (Al2O3) substrate material matter of 99.6%, this baseplate material coefficient of expansion is 7.5, existing millimeter wave transceiving assembly selected shielding box body is copper or aluminium alloy substantially, this section bar coefficient of expansion is about 20, differs comparatively large, be difficult to carry out high temperature seamless sintering with the baseplate material coefficient of expansion.Adopt micro-band printed board to connect between each MMIC of existing millimeter wave transceiving assembly simultaneously, micro-band printed board and mmic chip paste on shielding box body by conductive silver paste, conductive silver paste coating is uneven, mmic chip thickness (0.1mm) is too thin, cannot press, cause ground connection not fully, easily to produce parasitic disturbances, port match between mmic chip is seriously affected, and makes bulky.Moreover micro-band printed board is the RT5880 sheet material of Rogers selected by existing millimeter wave frequency band assembly, this sheet material coefficient of expansion is 125, cannot be shaping with mmic chip one-time process, cause needing repeatedly technique to assemble, the corresponding raising of fault occurrence probability, this sheet material heat conducting coefficient is 0.2, not easily heat conduction, and product life cycle reliability is affected.Also have existing millimeter-wave communication system transmitting-receiving port should not adopt coaxial connection (loss is too large), waveguide is all adopted to connect, and existing millimetre-wave circuit cannot support full waveguide, coaxial waveguide conversion must be carried out, existing coaxial waveguide switch technology has micro-band, ladder and probe three kinds of forms, micro-band forms is the technology generally adopted, but is subject to the impact of assembly technology, positioning precision, causes the shortcomings such as port match is poor, communication band is narrow, consistency is not high; Stepped-style mainly requires what (same plane) produced for extraordinary signal transmission path, restricts by machining accuracy and feature own, and loss is comparatively large, should not be applied to transmitting-receiving port; Probe geometries positioning precision is high, machining accuracy can be reached, but because millimeter wave frequency band wavelength is short, size is little, theory calculate data out, and machining cannot realize, the coaxial waveguide conversion of existing probe geometries mainly makes it be activated at a narrower frequency band range by tuning screw, and tuning screw also can reveal certain signal energy, has a strong impact on transceiver insulation, be unsuitable for two-forty, ultra broadband millimetre-wave attenuator demand.
In order to overcome deficiency of the prior art, the invention provides a kind of solution of miniaturized millimeter wave transceiving assembly, specific as follows:
A kind of miniaturized millimeter wave transceiving assembly, millimeter wave transceiving assembly, comprises local oscillator frequency multiplication link 101, power division link 4, receiver 103, transmitting chain 104, is all integrated in a shielding box body; Local oscillator frequency multiplication link 101 connects with power division link 4, and power division link 4 is connected with transmitting chain 104 with receiver 103 respectively; Described shielding box body adopts 85:15 tungsten-copper alloy.
As shown in Figure 2, described local oscillator frequency multiplication link comprises 50 ohm microstrip 16, frequency tripler 1, local oscillator band pass filter 2, this vibration magnifier 3, frequency tripler 1 and this vibration magnifier 3 adopt the manufacture of MMIC process, and 50 ohm microstrip 16 and local oscillator band pass filter 2 adopt 99.6% alundum (Al2O3) substrate of dielectric constant 9.9; Described receiver comprises coaxial conversion 11,50 ohm microstrip 16, low noise amplifier 12, image-reject filter 13, gain amplifier 14, the low-converter 15 that receive waveguide probe, low noise amplifier 12, gain amplifier 14 and low-converter 15 adopt the manufacture of MMIC process, and 50 ohm microstrip 16 and image-reject filter 13 adopt 99.6% alundum (Al2O3) substrate of dielectric constant 9.9; Described transmitting chain comprises coaxial conversion 10,50 ohm microstrip 16, power amplifier 9, driving amplifier 8, pre-amplifier 7, transmit band pass filter 6, the upconverter 5 of transmit waveguide probe, power amplifier 9, driving amplifier 8, pre-amplifier 7 and upconverter 5 adopt the manufacture of MMIC process, and 50 ohm microstrip 16 and transmit band pass filter 6 adopt 99.6% alundum (Al2O3) substrate of dielectric constant 9.9.
As shown in Figure 3, the mmic chip in described local oscillator frequency multiplication link, receiver, transmitting chain, 50 ohm microstrip, transmit band pass filter, local oscillator band pass filter, reception image-reject filter, power division link adopt high temperature pressure-free seamless once sintered shaping.Local oscillation signal inputs after coaxial transition to radio circuit through 50 ohm microstrip 16, promote local oscillation signal frequency through frequency tripler 1, the humorous clutter of local oscillator band pass filter 2 filtering, this vibration magnifier 3 enter power division link 4 and signal is divided into two-way after promoting local oscillation signal power level, it is stand-by that a road enters the upconverter 5 that low-converter 15, tunnel in receiver enters in transmitting chain.In 34-38GHz frequency range, Received signal strength is through receiving coaxial conversion 11,50 ohm microstrip 16 of waveguide probe by after coaxial transition to radio circuit, amplify after the humorous clutter of image-reject filter 13 filtering through low noise amplifier 12, gain is promoted again through gain amplifier 14, after entering low-converter 15 and local oscillation signal down-conversion, through 50 ohm microstrip 16, radio circuit is transitioned into output coaxially.Transmit after coaxial transition to radio circuit through 50 ohm microstrip 16,34-38GHz in-band signal is exported after entering up-conversion 5 and local oscillation signal up-conversion, through the humorous clutter of transmit band pass filter 6 filtering, after pre-amplifier 7, driving amplifier 8 amplify, through 50 ohm microstrip 16 isolation radiatings, after ingoing power amplifier 9 amplifies, through 50 ohm microstrip 16, radio circuit is transitioned into coaxially again, coaxially changes 10 output 1W power signals through transmit waveguide probe.Adopt 25um spun gold Direct Bonding to connect between all adjacent mmic chips and alundum (Al2O3) substrate, realize product size 53mm*41mm*18mm.
As shown in Figure 4 and Figure 5, described high temperature pressure-free seamless sintering solder 203 is uniformly dispersed on shielding box body 202 boss through high temperature (effect of boss utilizes its thickness height to correct MMIC and alundum (Al2O3) substrate thickness inconsistency, finally make MMIC and alundum (Al2O3) substrate upper surface at a horizontal plane, be easy to gold wire bonding, keep the connection consistency between each port), again MMIC201 and alundum (Al2O3) substrate 211 are put down gently on solder, do not need pressing, solder is through high temperature free diffusing, make MMIC201 and alundum (Al2O3) substrate 211 and shielding box body 202 be seamless to splice.
As shown in Figure 6, described probe 206 is through calculating, and the diameter 0.3mm length 2mm of theoretical value needed for inner wire diameter 1.1mm length 0.8mm, this theoretical value physical structure cannot machining.Now adopt high temperature sintering technique to splice integrated with gold-plated copper rod (204) for the glass insulator 205 of the prior art of inner wire diameter 0.3mm length 2.8mm, meet theoretical and practical application request.
As shown in Figure 7 and Figure 8, to transmit leakages for reducing transmitting chain, raising transceiver insulation, waveguide mouth adopts integrated design with shielding box body, this will cause great difficulty to probe assembling, adopt high temperature sintering technique to splice integrated with carrier briquetting 207 for probe 206, form probe carrier 208.Then probe carrier 208 is fixed to and completes on mmic chip and the seamless shielding box body 202 spliced of alundum (Al2O3) substrate, better solve probe assembling complexity problem.
The present invention adopts 85:15 tungsten-copper alloy to shield box body, the problem such as ground connection inequality, poor thermal conductivity, parasitic disturbances be serious that utilizes high temperature pressure-free seamless sintering technology to solve, reach that to meet all parts one-time process shaping, reduce production link production cost and secondary damage, improve performance parameters; 25um spun gold Direct Bonding is adopted to connect adjacent mmic chip, no longer increase any auxiliary union piece, solve the problems such as matching between port is poor, link load is excessive, size of components is excessive, reach at different levels, each port match good, volume-diminished, almost without the need to debugging amount, link load is less, and parasitic disturbances is less; By adopting the probe waveguide transitions of glass insulator and copper rod high temperature sintering one, solve the processing technology of diameter 0.3mm length 2.8mm that machining cannot complete and the integrated metallic conductor of diameter 1.1mm length 0.8mm, reach and widen communication band, effectively meet the millimeter-wave communication system demand of ultra broadband, two-forty.
The above, it is only preferred embodiment of the present invention, not any pro forma restriction is done to the present invention, although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, make a little change when the technology contents of above-mentioned announcement can be utilized or be modified to the Equivalent embodiments of equivalent variations, in every case be do not depart from technical solution of the present invention content, according to technical spirit of the present invention, within the spirit and principles in the present invention, to any simple amendment that above embodiment is done, equivalent replacement and improvement etc., within the protection range all still belonging to technical solution of the present invention.
Claims (3)
1. a miniaturized millimeter wave transceiving assembly, it is characterized in that, comprise shielding box body, local oscillator frequency multiplication link, power division link, receiver, a transmitting chain, local oscillator frequency multiplication link connects with power division link, and power division link is connected with transmitting chain with receiver respectively;
Described shielding box body adopts 85:15 tungsten-copper alloy, surface gold-plating 3um, inner integrated local oscillator frequency multiplication link, power division link, receiver, transmitting chain;
Described power division link adopts 99.6% alundum (Al2O3) substrate of dielectric constant 9.9;
Described local oscillator frequency multiplication link comprises 50 ohm microstrip, frequency tripler, local oscillator band pass filter, this vibration magnifier, wherein frequency tripler and this vibration magnifier adopt the manufacture of MMIC process, and 50 ohm microstrip and local oscillator band pass filter adopt 99.6% alundum (Al2O3) substrate of dielectric constant 9.9;
Described receiver comprises and receives the coaxial conversion of waveguide probe, 50 ohm microstrip, low noise amplifier, image-reject filter, gain amplifier, low-converter, wherein low noise amplifier, gain amplifier and low-converter adopt the manufacture of MMIC process, and 50 ohm microstrip and image-reject filter 13 adopt 99.6% alundum (Al2O3) substrate of dielectric constant 9.9;
Described transmitting chain comprises the coaxial conversion of transmit waveguide probe, 50 ohm microstrip, power amplifier, driving amplifier, pre-amplifier, transmit band pass filter, upconverter, its intermediate power amplifier, driving amplifier, pre-amplifier and upconverter adopt the manufacture of MMIC process, and 50 ohm microstrip and transmit band pass filter adopt 99.6% alundum (Al2O3) substrate of dielectric constant 9.9;
Local oscillation signal inputs after coaxial transition to radio circuit through 50 ohm microstrip, promote local oscillation signal frequency through frequency tripler, the humorous clutter of local oscillator band pass filter filtering, this vibration magnifier enter power division link after promoting local oscillation signal power level and signal is divided into two-way, a road enters low-converter in receiver, upconverter that a road enters in transmitting chain is stand-by; In 4-38GHz frequency range, Received signal strength is through receiving the coaxial conversion of waveguide probe, 50 ohm microstrip by after coaxial transition to radio circuit, amplify after the humorous clutter of image-reject filter filtering through low noise amplifier, gain is promoted again through gain amplifier, after entering low-converter and local oscillation signal down-conversion, through 50 ohm microstrip, radio circuit is transitioned into output coaxially.Transmit after coaxial transition to radio circuit through 50 ohm microstrip, 34-38GHz in-band signal is exported after entering up-conversion and local oscillation signal up-conversion, through the humorous clutter of transmit band pass filter filtering, after pre-amplifier, driving amplifier amplify, through 50 ohm microstrip isolation radiatings, after ingoing power amplifier amplifies, through 50 ohm microstrip, radio circuit is transitioned into coaxially again, coaxially changes exporting 1W power signal through transmit waveguide probe;
The coaxial conversion of the transmit waveguide probe in the coaxial conversion of the reception waveguide probe in described receiver and transmitting chain, its waveguide mouth adopts standard BJ320 rectangular waveguide, and its probe adopts the glass insulator of diameter 0.3mm and the copper rod 204 high temperature sintering one of diameter 1.1mm;
Described high temperature pressure-free seamless sintering is uniformly dispersed on shielding box body boss by solder through high temperature, again MMIC and alundum (Al2O3) substrate are put down gently on solder, do not need pressing, solder, through high temperature free diffusing, makes MMIC and alundum (Al2O3) substrate and shielding box body is seamless to splice;
High temperature sintering technique is also adopted the glass insulator of inner wire diameter 0.3mm length 2.8mm and gold plated copper rod integral to be spliced in addition;
Adopt high temperature sintering technique to splice integrated with carrier briquetting for probe, form probe carrier; Then probe carrier is fixed to and completes on mmic chip and the seamless shielding box body spliced of alundum (Al2O3) substrate.
2. miniaturized millimeter wave transceiving assembly according to claim 1, is characterized in that, the effect of 50 ohm microstrip is connection, the switching of being convenient to radio-frequency (RF) coaxial circuit and microwave circuit.
3. miniaturized millimeter wave transceiving assembly according to claim 3, is characterized in that, adopts 25um spun gold Direct Bonding to connect, realize product size 53mm*41mm*18mm between all adjacent mmic chips and alundum (Al2O3) substrate.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106603091A (en) * | 2017-01-20 | 2017-04-26 | 成都瑞迪威科技有限公司 | Millimeter wave 16-channel transmit-receive frequency conversion channel assembly |
| CN116979988A (en) * | 2023-09-21 | 2023-10-31 | 电子科技大学 | Miniaturized highly integrated millimeter wave front end assembly module |
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