CN201536348U - Ka-waveband MMW (millimeter waves) down converter - Google Patents
Ka-waveband MMW (millimeter waves) down converter Download PDFInfo
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- CN201536348U CN201536348U CN2009200487337U CN200920048733U CN201536348U CN 201536348 U CN201536348 U CN 201536348U CN 2009200487337 U CN2009200487337 U CN 2009200487337U CN 200920048733 U CN200920048733 U CN 200920048733U CN 201536348 U CN201536348 U CN 201536348U
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Abstract
The utility model relates to a Ka-waveband MMW (millimeter waves) down converter, which includes a shielded box body, and a cavity arranged in the box body, wherein a microwave circuit is arranged in the cavity, and a radio frequency RF inputting interface and a local oscillation LO inputting interface, and an intermediate frequency IF inputting interface are arranged on the box body and connected with corresponding signal inputting and outputting terminals of the microwave circuit; the microwave circuit includes a frequency conversion module, an intermediate-frequency filtration module and a intermediate-frequency module; radio frequency RF signals and local oscillation LO signals are transmitted into the frequency conversion module through a corresponding input interface, and the signals subject to the frequency conversion are transmitted to the intermediate-frequency module after passing through the intermediate frequency filtration module, and then sent out by an intermediate frequency IF outputting interface. The down converter has the advantages of higher gain, lower noise, and higher SNR (signal to noise ratio), which are better indexes for a Ka-waveband device in the practical stage and also greatest strengths of the utility model.
Description
Technical field
The utility model belongs to millimetric wave device and technical field, and what be specifically related to is Ka wave band millimeter wave low-converter.
Background technology
What millimeter wave high-speed wideband wireless transceiver system was transformed into that microwave signal mainly relies on millimeter-wave signal is exactly the millimeter wave low-converter, and it is the important component part of millimeter-wave systems.Millimeter wave high-speed wideband wireless transceiver system generally requires the millimeter wave low-converter to have higher gain and than low-noise factor, good standing wave, good inband flatness etc.At present domestic millimeter wave low-converter that can be market-oriented is also in minority, because its high band and high technology, so process in structure, very difficult assurance above-mentioned requirements such as the welding procedure of material, perhaps be exactly complex structure, be difficult for debugging, batch process is very limited.
Summary of the invention
The purpose of this utility model is the deficiency at existing product, provides a kind of technical indicator better Ka wave band millimeter wave low-converter, its compact conformation, and debugging can be satisfied the requirement of Ka wave band millimeter wave high-speed wideband wireless transceiver system effectively easily.
The technical solution of the utility model is,
A kind of Ka wave band millimeter wave low-converter, comprise in the box body, box body of shielding and be provided with cavity, be provided with microwave circuit in the cavity, box body is provided with radio frequency input interface and the local oscillator LO input interface that is connected with the corresponding signal input output end of microwave circuit, and the medium-frequency IF output interface;
It is characterized in that microwave circuit comprises frequency-variable module, intermediate frequency filtering module and middle amplification module; Radio frequency rf signal and local oscillator LO signal import frequency-variable module into by corresponding input interface, import middle amplification module into after the signal of frequency conversion is by the intermediate frequency filtering module, are spread out of by the medium-frequency IF output interface at last.
Also be provided with the two-stage high frequency amplifying module between the input of described radio frequency rf signal and the frequency-variable module.
Described frequency-variable module is that the mmic chip with the GaAs material is a core; Described two-stage high frequency amplifying module all is that the mmic chip with the GaAs material is a core.
The dielectric-slab of described microwave circuit is the RT5880 type microwave board of ROGERS company; The mmic chip of the mmic chip of frequency-variable module and two-stage high frequency amplifying module all sintering on this dielectric-slab.
Described local oscillator LO input interface is provided in a side of the input terminal on the box body, and the local oscillator LO signal input part of described microwave circuit is connected with this input terminal.
Described radio frequency input interface is provided in a side of the waveguide on the box body; The radio frequency rf signal input of described microwave circuit is provided with the microstrip transitions probe, and the microstrip transitions probe inserts described waveguide.Described waveguide is the WR28 waveguide.
The direction that described microstrip transitions probe inserts is perpendicular to the broadside of corresponding waveguide mouth.
The intermediate frequency filtering module is a microstrip filter.
The power input of the mmic chip of described frequency-variable module and the mmic chip of the two-stage high frequency amplifying module electrocardio that wears long holds and to be connected external power source.
The main advantage of the amplifier section of this frequency converter is that it is very little at the noise of Ka wave band; The major function of frequency conversion chip comprises local oscillator two frequencys multiplication, mixing etc.Millimeter wave low-converter frequency conversion input adopts waveguide to realize to microstrip transitions, and waveguide mouth broadside is vertical with the direction that probe inserts, and is convenient to assembling, be easy to debugging, and loss is little, the received signal to noise ratio advantages of higher.
The preferred GaAs material of mmic chip of the present utility model millimeter wave chip, its technological level is very high, function admirable, the circuit of design is fairly simple, does not need too much to consider the problem of MMIC and microstrip line coupling aspect, is easy to debugging.Connect with microstrip filter between frequency conversion MMIC and the intermediate frequency amplification MMIC,, help the millimeter wave low-converter and realize good performance index with the unnecessary HF noise signal of filtering.
The ratio of gains of the present utility model is higher, noise ratio is lower, has very high signal to noise ratio, and this also is in the reasonable index of this wave band device of practical stage, also is sharpest edges of the present utility model.
The utlity model has the technical indicator of very strong competitiveness, structure is smaller, and debugging is convenient, and cost is low.
Description of drawings
Fig. 1 is the utility model box body internal structure sketch among the embodiment;
Fig. 2 is the utility model overall structure sketch among the embodiment;
Fig. 3 is a theory diagram of the present utility model among the embodiment.
Embodiment
A kind of Ka wave band millimeter wave low-converter, comprise in the box body 1, box body 1 of shielding and be provided with cavity, be provided with microwave circuit in the cavity, box body 1 is provided with radio frequency input interface and the local oscillator LO input interface that is connected with the corresponding signal input output end of microwave circuit, and the medium-frequency IF output interface;
Microwave circuit comprises frequency-variable module, intermediate frequency filtering module 5 and middle amplification module 8; Radio frequency rf signal and local oscillator LO signal import frequency-variable module into by corresponding input interface, import middle amplification module into after the signal of frequency conversion is by the intermediate frequency filtering module, are spread out of by the medium-frequency IF output interface at last.
Also be provided with the two-stage high frequency amplifying module between the input of described radio frequency rf signal and the frequency-variable module.
Described frequency-variable module is that the mmic chip with the GaAs material is a core; Described two-stage high frequency amplifying module all is that the mmic chip with the GaAs material is a core.
The dielectric-slab of described microwave circuit is the RT5880 type microwave board of ROGERS company; The mmic chip 3.3 of frequency-variable module and the mmic chip 3.1 and 3.2 of two-stage high frequency amplifying module all sintering on this dielectric-slab.
Described local oscillator LO input interface is provided in a side of the input terminal 4.1 on the box body, and the local oscillator LO signal input part 6 of described microwave circuit is connected with this input terminal 4.1.
Described radio frequency input interface is provided in a side of the waveguide 9 on the box body; The radio frequency rf signal input of described microwave circuit is provided with microstrip transitions probe 2, and microstrip transitions probe 2 inserts described waveguide 9.Described waveguide 9 is WR28 waveguides.The direction that microstrip transitions probe 2 inserts is perpendicular to the broadside of corresponding waveguide mouth.
In this example, described medium-frequency IF output interface is the lead-out terminal 4.2 on the box body.
Intermediate frequency filtering module 5 is microstrip filters.
The mmic chip 3.3 of described frequency-variable module and the mmic chip 3.1 of two-stage high frequency amplifying module and 3.2 the power input electrocardio that wears long holds and is connected external power source.Sign 10 is the wiring that this feedthrough capacitor is connected with external power source among Fig. 2.
The millimeter wave low-converter of conventional design need be set up the model of entire device in the associated electromagnetic field simulation software, set and find the solution relevant parameter, so that obtain optimum performance, the utility model also is to obtain therefrom.Be the millimeter wave low-converter technical indicator that designs by the demand of system below:
(1), working temperature :-40 ℃～+ 55 ℃
(2), storing temperature :-55 ℃～+ 70 ℃
(3), LO input power: 4～10dBm
(4), LO incoming frequency: 18～19GHz
(5), IF output frequency: 1GHz～2GHz
(6), gain: 〉=40dB
(7), noise factor :≤4dB
(8), spuious inhibition :≤-60dBc
(9), LO input interface: SMA interface
(10), IF output interface: SMA interface
(11), RF input interface: WR28 standard waveguide.
Claims (9)
1. Ka wave band millimeter wave low-converter, comprise in the box body, box body of shielding and be provided with cavity, be provided with microwave circuit in the cavity, box body is provided with radio frequency input interface and the local oscillator LO input interface that is connected with the corresponding signal input output end of microwave circuit, and the medium-frequency IF output interface;
It is characterized in that microwave circuit comprises frequency-variable module, intermediate frequency filtering module and middle amplification module; Radio frequency rf signal and local oscillator LO signal import frequency-variable module into by corresponding input interface, import middle amplification module into after the signal of frequency conversion is by the intermediate frequency filtering module, are spread out of by the medium-frequency IF output interface at last.
2. Ka wave band millimeter wave low-converter according to claim 1 is characterized in that also being provided with the two-stage high frequency amplifying module between the input of described radio frequency rf signal and the frequency-variable module.
3. Ka wave band millimeter wave low-converter according to claim 2 is characterized in that described frequency-variable module is that mmic chip with the GaAs material is a core; Described two-stage high frequency amplifying module all is that the mmic chip with the GaAs material is a core.
4. Ka wave band millimeter wave low-converter according to claim 3, the power input that it is characterized in that the mmic chip of described frequency-variable module and the mmic chip of the two-stage high frequency amplifying module electrocardio that wears long holds and is connected external power source.
5. Ka wave band millimeter wave low-converter according to claim 3, the dielectric-slab that it is characterized in that described microwave circuit are the RT5880 type microwave board of ROGERS company; The mmic chip of the mmic chip of frequency-variable module and two-stage high frequency amplifying module all sintering on this dielectric-slab.
6. according to the arbitrary described Ka wave band millimeter wave low-converter of claim 1～5, it is characterized in that described local oscillator LO input interface is provided in a side of the input terminal on the box body, the local oscillator LO signal input part of described microwave circuit is connected with this input terminal.
7. according to the arbitrary described Ka wave band millimeter wave low-converter of claim 1～5, it is characterized in that described radio frequency input interface is provided in a side of the waveguide on the box body; The radio frequency rf signal input of described microwave circuit is provided with the microstrip transitions probe, and the microstrip transitions probe inserts described waveguide.
8. Ka wave band millimeter wave low-converter according to claim 7 is characterized in that described microstrip transitions probe inserts the broadside of the direction of described waveguide perpendicular to corresponding waveguide mouth.
9. according to the arbitrary described Ka wave band millimeter wave low-converter of claim 1～5, it is characterized in that the intermediate frequency filtering module is a microstrip filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200487337U CN201536348U (en) | 2009-10-28 | 2009-10-28 | Ka-waveband MMW (millimeter waves) down converter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200487337U CN201536348U (en) | 2009-10-28 | 2009-10-28 | Ka-waveband MMW (millimeter waves) down converter |
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| Publication Number | Publication Date |
|---|---|
| CN201536348U true CN201536348U (en) | 2010-07-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009200487337U Expired - Lifetime CN201536348U (en) | 2009-10-28 | 2009-10-28 | Ka-waveband MMW (millimeter waves) down converter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522953A (en) * | 2011-12-15 | 2012-06-27 | 中国科学院微电子研究所 | Active millimetre wave subharmonic monolithic integrated frequency mixer circuit based on DHBT (Double Heterojunction Bipolar Transistor) process |
| CN105099370A (en) * | 2015-08-12 | 2015-11-25 | 安徽华东光电技术研究所 | Pre-frequency mixer processing method |
-
2009
- 2009-10-28 CN CN2009200487337U patent/CN201536348U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522953A (en) * | 2011-12-15 | 2012-06-27 | 中国科学院微电子研究所 | Active millimetre wave subharmonic monolithic integrated frequency mixer circuit based on DHBT (Double Heterojunction Bipolar Transistor) process |
| CN102522953B (en) * | 2011-12-15 | 2014-10-22 | 中国科学院微电子研究所 | Active millimetre wave subharmonic monolithic integrated frequency mixer circuit based on DHBT (Double Heterojunction Bipolar Transistor) process |
| CN105099370A (en) * | 2015-08-12 | 2015-11-25 | 安徽华东光电技术研究所 | Pre-frequency mixer processing method |
| CN105099370B (en) * | 2015-08-12 | 2018-10-23 | 安徽华东光电技术研究所 | The processing method of preposition frequency mixer |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100728 |