CN103762420B - A kind of THz wave back cavity type sheet carries antenna - Google Patents
A kind of THz wave back cavity type sheet carries antenna Download PDFInfo
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- CN103762420B CN103762420B CN201410063908.7A CN201410063908A CN103762420B CN 103762420 B CN103762420 B CN 103762420B CN 201410063908 A CN201410063908 A CN 201410063908A CN 103762420 B CN103762420 B CN 103762420B
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Abstract
The invention discloses a kind of THz wave back cavity type sheet and carry antenna, including the bottom metal layer overlapped successively, dielectric layer, top layer metallic layer, offer on described top layer metallic layer a region for arrange rectangular shape and its on carry apertured gap load radiation patch, the one end of the bonding jumper formed by cabling on top layer metallic layer and gap load that radiation patch is vertical to be connected and then form CPW feed end, offer rectangular aperture on the bottom metal layer below CPW feed end outside top layer metallic layer and constitute electro-magnetic bandgap matching network, the SIW resonance that bottom metal layer is connected formation one U-shape with top layer metallic layer by metallic vias carries on the back chamber.The antenna structure of the present invention, make antenna structure compact, increase antenna gain, improve antenna radiation efficiency, increase the impedance bandwidth of antenna, meet the application requirement in fields such as THz wave imaging, Terahertz lossless detection and Terahertz communications, and the most compatible with mainstream CMOS processes, it is adaptable to the silicon chip of various resistivity.
Description
Technical field
The invention belongs to electronics, millimeter wave, Terahertz (100GHz～10THz) technical field, relate to one
Plant sheet and carry antenna, specifically, relate to a kind of THz wave back cavity type sheet and carry antenna.
Background technology
In recent years, the research of THz wave worldwide has been a great concern, and develops electromagnetic spectrum
In the technology of last wave band being not yet used widely become more and more important.Meanwhile, along with integrated
The development of circuit, Terahertz transmitting-receiving subassembly is integrated in small chip top becomes reality.
Antenna, as first element and last element of transmitting terminal of receiving terminal, it is necessary to circuit
Being connected, therefore to ensure maximum power transfer, impedance matching is requisite link.Additionally, by
Being to realize on conventional PCB in antenna, gold wire bonding is used for connecting them to integrated circuit, can be greatly
Impact coupling, especially in the frequency range that Terahertz is the highest, because these bonding lines are generally of uncertainty,
It cannot be guaranteed that it is repeatable.By contrast, sheet carries antenna can be the most integrated with front stage circuits, alleviates
State problem.Impedance (low-noise amplifier of such as receiving terminal and the power amplification of transmitting terminal as IC element
Device) need not match 50 Ω.And, the antenna of collaborative design and circuit may insure that the impedance of its complexity
The matching network of conjugation, without being mutually matched.Use conjugate impedance match, the amplitude of the imaginary part of two impedances
Equal but symbol is contrary, thus saves extra matching network, has saved space and cost, and simplifies and set
Meter work.Meanwhile, IC chip is joined directly together by metal routing to the distributing point of antenna and also eliminates
The uncertainty brought with gold wire bonding.
But, in existing semiconductor technology, substrate typically has relatively low resistivity (usual 10 Ω cm),
The energy of it alignment space radiation is more by the low resistance path of substrate, thus causes gain to decline.With
Time, substrate is generally also provided with high-k (ε r=11.9), causes the radiant power of antenna to be limited in lining
Limit, inside story rather than be radiated free space, reduce further radiation efficiency.
Summary of the invention
For above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of THz wave back cavity type sheet
Carry antenna, solve sheet in prior art carry that antenna size is big, antenna efficiency and gain is low, aerial radiation is served as a contrast
The problem that end impact is big.
To achieve these goals, the technical solution used in the present invention is as follows:
A kind of THz wave back cavity type sheet carries antenna, including the bottom metal layer overlapped successively, dielectric layer,
Top layer metallic layer, described top layer metallic layer offers a region for arrange rectangular shape and its on carry seamed
The gap of gap loads radiation patch, the one end of the bonding jumper formed on top layer metallic layer and gap by cabling
Loading radiation patch vertically connect and then form CPW feed end, its other end extends to outside top layer metallic layer,
Offer rectangular aperture on the bottom metal layer below CPW feed end outside top layer metallic layer and constitute electro-magnetic bandgap
Matching network, the SIW that bottom metal layer is connected formation one U-shape with top layer metallic layer by metallic vias is humorous
Shake back of the body chamber, and the opening of this U-shaped loads radiation patch be contained in this U-shaped towards CPW feed end, gap
Opening in.Wherein, CPW refers to that co-planar waveguide, SIW refer to substrate integration wave-guide.Described gap loads radiation
Paster, between CPW feed end and top layer metallic layer, all there is gap.
Wherein, the U-shape in the rectangular-shaped and SIW resonance back of the body chamber of described gap loading radiation patch is all with this U
The axis of symmetry of shape is axisymmetricly.
Specifically, described gap loads the length of radiation patch and is about λ/4, and width is about 3 λ/4, wherein
λ is antenna operation wavelength in chip.
Further, the width in described SIW resonance back of the body chamber is 2 λ/5～3 λ/5, and length direction loads spoke with gap
The distance penetrating paster is about λ/4, and wherein λ is antenna operation wavelength in chip.
As preferably, the width in described SIW resonance back of the body chamber is about λ/2.
As preferably, described dielectric layer is by SiO2Material is made.
Compared with prior art, the method have the advantages that
The present invention designs ingenious, not only have simple and compact for structure, size is little, high efficiency, high-gain excellent
Point, and add the impedance bandwidth of antenna, meet THz wave imaging, Terahertz lossless detection and
The application requirement in the fields such as Terahertz communication, has prominent substantive distinguishing features and significantly progress.Further,
The present invention is the most compatible with mainstream CMOS processes, it is adaptable to the silicon chip of various resistivity, and need not volume
Outer impedance match part, is with a wide range of applications.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention.
Fig. 2 is the return loss plot of the present invention-embodiment.
Fig. 3 is the directional diagram of the present invention-embodiment.
In above-mentioned accompanying drawing, component names corresponding to reference is as follows:
1-CPW feed end, 2-electro-magnetic bandgap matching network, 3-gap loads radiation patch, 4-gap, 5-SIW
Resonance back of the body chamber, 6-bottom metal layer, 7-top layer metallic layer.
Detailed description of the invention
The invention will be further described with embodiment below in conjunction with the accompanying drawings, embodiments of the present invention include but
It is not limited to the following example.
Embodiment
As Fig. 1 shows, this THz wave back cavity type sheet carries antenna, including by the underlying metal overlapped successively
The antenna body that layer 6, dielectric layer, top layer metallic layer 7 are constituted, the CPW feed end arranged on this body
1, electro-magnetic bandgap matching network 2, the gap loading radiation patch 3 with gap 4, SIW resonance back of the body chamber 5
Five major parts.Specifically:
Top layer metallic layer is offered correspondingly region, for arranging CPW feed end 1 He in metal strip
The gap of rectangular shape loads radiation patch 3, and CPW feed end one end loads the side of radiation patch with gap
Vertically connecting in the middle part of limit, the other end extends to outside top layer metallic layer, and correspondingly, bottom metal layer is in this end position
Put also slightly larger than top layer metallic layer.Gap loads radiation patch and constitutes antenna aperture in this region, and with
Jointly and there is gap between top layer metallic layer in CPW feed end.
Top layer metallic layer and bottom metal layer connect formation one resonant cavity by metallic vias, are SIW humorous
Shake back of the body chamber 5, and this SIW resonance back of the body chamber is a U-shape, and the opening of U-shaped is towards CPW feed end 1, and incites somebody to action
Gap loads radiation patch 3 and region is contained in the opening of this U-shaped.U-shaped in the present embodiment
Both sides of the edge are against above-mentioned gap.
Bottom metal layer is metal ground, and one rectangle of location directly below hollow out at CPW feed end 1 is formed
Defect ground, is electro-magnetic bandgap matching network 2, and its size can change the input impedance of antenna, in order to front
Level circuit mates.
Wherein, gap loads the length of radiation patch and is about λ/4, and width is about 3 λ/4, SIW resonance back of the body chamber
Width be about λ/2, on length direction with gap load radiation patch distance be about λ/4, this λ is antenna
Operation wavelength in chip.
Using 340GHz as operating frequency, select the 0.13umBiCMOS technique of seven layers of metal, make top
The thickness of layer metal level is 3um, and the thickness of bottom metal layer is 0.4um, and dielectric layer is preferably SiO2, its
Thickness is 11um.Chip used substrate selects silicon medium, and relative dielectric constant is 11.9, and resistivity is 10
Ω·cm。
Correspondingly, gap loads a length of the 180～220um of radiation patch, and width is 300～400um；SIW
The width in resonance back of the body chamber is 400～500um, and the distance that length direction loads radiation patch with gap is
150～250um.
As shown in Figures 2 and 3, the bandwidth range of this antenna is 335GHz-348GHz, and gain is 3.5dB,
Not only have simple and compact for structure, size is little, the advantage of high efficiency, high-gain, and adds antenna
Impedance bandwidth, has fully met and has led in THz wave imaging, Terahertz lossless detection and Terahertz communication etc.
The application requirement in territory.
According to above-described embodiment, the present invention just can be realized well.What deserves to be explained is, based on said structure
On the premise of design, for solving same technical problem, even if some made in the present invention are without substantive
Change or polishing, the essence of the technical scheme used is the most consistent with the present invention, it should also at this
In bright protection domain.
Claims (6)
- null1. a THz wave back cavity type sheet carries antenna，Including the bottom metal layer (6) overlapped successively、Dielectric layer、Top layer metallic layer (7)，It is characterized in that，A region is offered for arranging rectangular shape and on it with gap loading radiation patch (3) of gap (4) on described top layer metallic layer，The one end of the bonding jumper formed by cabling on top layer metallic layer and gap load that radiation patch is vertical to be connected and then form CPW feed end (1)，Its other end extends to outside top layer metallic layer，Offer rectangular aperture on the bottom metal layer below CPW feed end outside top layer metallic layer and constitute electro-magnetic bandgap matching network (2)，The SIW resonance that bottom metal layer is connected formation one U-shape with top layer metallic layer by metallic vias carries on the back chamber (5)，The opening of this U-shaped is towards CPW feed end，Gap loads radiation patch and is contained in the opening of this U-shaped，Described gap loads radiation patch and there is gap in the opening of this U-shaped and between top layer metallic layer，The both sides of the edge of U-shape are against above-mentioned gap.
- A kind of THz wave back cavity type sheet the most according to claim 1 carries antenna, it is characterised in that described gap loads the rectangular-shaped and SIW resonance of radiation patch and carries on the back the U-shape in chamber all with the axis of symmetry of this U-shape axisymmetricly.
- A kind of THz wave back cavity type sheet the most according to claim 1 carries antenna, it is characterised in that described gap loads a length of λ/4 of radiation patch (3), and width is 3 λ/4, and wherein λ is antenna operation wavelength in chip.
- A kind of THz wave back cavity type sheet the most according to claim 1 carries antenna, it is characterized in that, the width in described SIW resonance back of the body chamber is 2 λ/5, λ/5 ~ 3, and the distance that length direction loads radiation patch with gap is λ/4, and wherein λ is antenna operation wavelength in chip.
- A kind of THz wave back cavity type sheet the most according to claim 4 carries antenna, it is characterised in that the width in described SIW resonance back of the body chamber is λ/2.
- 6. carry antenna according to a kind of THz wave back cavity type sheet described in any one of claim 1 ~ 5, it is characterised in that described dielectric layer is by SiO2Material is made.
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| CN201410063908.7A CN103762420B (en) | 2014-02-25 | 2014-02-25 | A kind of THz wave back cavity type sheet carries antenna |
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| CN201410063908.7A CN103762420B (en) | 2014-02-25 | 2014-02-25 | A kind of THz wave back cavity type sheet carries antenna |
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| CN103762420B true CN103762420B (en) | 2016-08-17 |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US10170839B2 (en) * | 2016-05-16 | 2019-01-01 | City University Of Hong Kong | Circularly polarized planar aperture antenna with high gain and wide bandwidth for millimeter-wave application |
| CN108461481B (en) * | 2018-02-08 | 2023-07-25 | 中国科学院福建物质结构研究所 | Terahertz antenna chip with radiation limiting frame structure and preparation method thereof |
| CN108461912B (en) * | 2018-03-28 | 2020-02-18 | 合肥工业大学 | Terahertz microstrip antenna |
| CN109378578B (en) * | 2018-09-19 | 2020-11-10 | 天津大学 | High-radiation-efficiency high-gain silicon substrate on-chip dielectric resonant antenna and antenna array |
| CN109540285A (en) * | 2018-10-17 | 2019-03-29 | 天津大学 | Novel heterodyne detector based on substrate integration wave-guide antenna |
| CN109041413A (en) * | 2018-10-31 | 2018-12-18 | 中国工程物理研究院电子工程研究所 | A kind of depth inhibits the electromagnetic bandgap structure of ultra wide band simultaneous switching noise |
| CN109521496B (en) * | 2018-12-24 | 2020-09-08 | 广东工业大学 | NMOSFET terahertz detector and method based on dielectric resonant antenna |
| US20230387563A1 (en) * | 2019-10-10 | 2023-11-30 | Rohm Co., Ltd. | Terahertz device |
| CN113394574B (en) * | 2021-06-17 | 2023-03-24 | 网络通信与安全紫金山实验室 | Terahertz oscillator integrated with differential antenna and field path fusion method thereof |
| CN113922073B (en) * | 2021-09-30 | 2022-09-23 | 杭州电子科技大学 | Compact high-gain single-feed millimeter wave back cavity patch filter antenna |
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| CN201156581Y (en) * | 2008-02-27 | 2008-11-26 | 东南大学 | Oblique slot array 45 DEG linear polarization antenna with substrate integrated waveguide |
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| CN103531913A (en) * | 2013-10-14 | 2014-01-22 | 电子科技大学 | Hexagonal substrate integrated waveguide slot antenna |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CA2629035A1 (en) * | 2008-03-27 | 2009-09-27 | Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of Industry, Through The Communications Research Centre Canada | Waveguide filter with broad stopband based on sugstrate integrated waveguide scheme |
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|---|---|---|---|---|
| CN201117804Y (en) * | 2007-11-12 | 2008-09-17 | 杭州电子科技大学 | Size reduced low contour back cavity linear polarization antenna |
| CN201156581Y (en) * | 2008-02-27 | 2008-11-26 | 东南大学 | Oblique slot array 45 DEG linear polarization antenna with substrate integrated waveguide |
| CN102142616A (en) * | 2011-01-21 | 2011-08-03 | 杭州电子科技大学 | Low profile cavity backed integrated antenna with widened frequency band |
| CN103165966A (en) * | 2011-12-14 | 2013-06-19 | 索尼公司 | Waveguide, interposer substrate including the same, module, and electronic apparatus |
| CN103531913A (en) * | 2013-10-14 | 2014-01-22 | 电子科技大学 | Hexagonal substrate integrated waveguide slot antenna |
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