CN109521496B - NMOSFET terahertz detector and method based on dielectric resonant antenna - Google Patents

NMOSFET terahertz detector and method based on dielectric resonant antenna Download PDF

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CN109521496B
CN109521496B CN201811581762.XA CN201811581762A CN109521496B CN 109521496 B CN109521496 B CN 109521496B CN 201811581762 A CN201811581762 A CN 201811581762A CN 109521496 B CN109521496 B CN 109521496B
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马建国
周绍华
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Guangdong University of Technology
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Abstract

The invention discloses an NMOSFET terahertz detector based on a dielectric resonant antenna, which comprises an on-chip dielectric resonant terahertz antenna, wherein the on-chip dielectric resonant terahertz antenna is connected with a matching network, the matching network is connected with a source electrode of the NMOSFET, a grid electrode of the NMOSFET is sequentially connected with a first bias resistor and a first bias voltage, a third transmission line is connected between the first bias resistor and the grid electrode, a drain electrode of the NMOSFET is connected with a first blocking capacitor, the other end of the first blocking capacitor is connected with a low-noise preamplifier, a second bias resistor and a second bias voltage are connected between the first blocking capacitor and the low-noise preamplifier in parallel, and the low-noise preamplifier is further provided with a voltage feedback loop. Compared with the prior art, the technical scheme of the invention effectively reduces the loss of the on-chip terahertz antenna and improves the gain and radiation efficiency of the on-chip terahertz antenna.

Description

NMOSFET terahertz detector and method based on dielectric resonant antenna
Technical Field
The invention relates to the technical field of terahertz, in particular to an NMOSFET terahertz detector and a method based on a dielectric resonant antenna.
Background
Terahertz (THz) generally refers to an electromagnetic wave with a frequency of 0.1 to 10THz (with a wavelength of 0.03 to 3mm), a long wave band of the electromagnetic wave coincides with millimeter waves (sub-millimeter waves), the development mainly depends on electronics science technology, a short wave band of the electromagnetic wave coincides with infrared rays, the development mainly depends on photonics science technology, and visible Terahertz waves are a frequency band which is transited from macroscopic electronics to microscopic photonics, so that the visible Terahertz waves occupy a special position in an electromagnetic wave spectrum, but the electromagnetic wave in the Terahertz frequency band is not fully researched and applied due to the lack of an effective Terahertz radiation generation and detection method for a long time, so that the Terahertz wave is called as a Terahertz gap (THz gap) in the electromagnetic wave spectrum.
In recent years, terahertz detection based on NMOSFET has been proved to be very feasible, but due to CMOS process limitation, the loss of the conventional on-chip terahertz antenna such as dipole and patch in the terahertz detector is large, which causes the gain and radiation efficiency of the conventional on-chip terahertz antenna such as dipole and patch to be greatly reduced, and greatly affects the detection efficiency and detection sensitivity of the NMOSFET terahertz detector.
At present, an on-chip terahertz antenna in a terahertz detector is developed towards the trends of low loss, high gain and high radiation efficiency, so that the development of a novel on-chip terahertz antenna based on a CMOS (complementary metal oxide semiconductor) compatible process to realize low loss, high gain and high radiation efficiency is a current research hotspot. Meanwhile, the biggest difference between the traditional terahertz antennas such as on-chip dipoles and patches and the traditional terahertz dielectric resonant antenna is that the dielectric resonant block in the terahertz dielectric resonant antenna on the chip has the characteristic of low loss, so that the problem of high loss of the terahertz antenna on the chip can be effectively solved. In addition, the conventional dielectric resonant antenna is proved to be used for designing the on-chip terahertz antenna, electromagnetic energy in a space can be coupled to the dielectric resonant block with low loss characteristic through the on-chip structure, so that the problem of high loss of the on-chip terahertz antenna can be effectively solved, and the radiation efficiency and gain of the on-chip terahertz antenna are greatly improved.
Compared with the traditional NMOSFET terahertz detector based on the terahertz antennas such as dipoles and patch on the chip, the terahertz dielectric resonator antenna on the chip is innovatively introduced into the terahertz detector based on the NMOSFET, so that the terahertz antenna on the chip is lower in loss and higher in gain and radiation efficiency.
Disclosure of Invention
The invention mainly aims to provide an NMOSFET terahertz detector and a method based on a dielectric resonant antenna, and aims to reduce the loss of an on-chip terahertz antenna, improve the gain and radiation efficiency of the on-chip terahertz antenna and improve the detection efficiency and detection sensitivity of the NMOSFET terahertz detector.
In order to achieve the purpose, the terahertz detector based on the dielectric resonant antenna comprises an on-chip dielectric resonant terahertz antenna, the on-chip dielectric resonant terahertz antenna is connected with a matching network, the matching network is connected with a source electrode of the NMOSFET, a grid electrode of the NMOSFET is sequentially connected with a first bias resistor and a first bias voltage, a third transmission line is connected between the first bias resistor and the grid electrode, a drain electrode of the NMOSFET is connected with a first blocking capacitor, the other end of the first blocking capacitor is connected with a low-noise preamplifier, a second bias resistor and a second bias voltage are connected between the first blocking capacitor and the low-noise preamplifier in parallel, and the low-noise preamplifier is further provided with a voltage feedback loop.
Preferably, the on-chip dielectric resonance terahertz antenna comprises an on-chip H-shaped slot structure and a rectangular dielectric resonance block which is connected to the surface of the on-chip H-shaped slot structure through an insulating glue layer.
Preferably, the on-chip H-shaped slot structure is formed on the surface of the integration process top metal and is located in a metal cavity formed by stacking the middle layer metal and the metal via except the integration process top metal and the integration process bottom metal in the integration process.
Preferably, the H-shaped gap structure on the chip comprises a left vertical gap and a right vertical gap which are arranged in parallel, and one side, opposite to the left vertical gap and the right vertical gap, of the left vertical gap is connected with the left gap and the right gap which are in an inverted L shape respectively.
Preferably, the horizontal part of the left side gap is connected in the middle of the left vertical gap, the horizontal part of the right side gap is connected in the middle of the right vertical gap, and the vertical parts in the left side gap and the right side gap are parallel to each other and form two lead-out gaps for connecting the antenna with an external structure.
Preferably, the matching network includes a first transmission line having two ends respectively connected to the on-chip dielectric resonator terahertz antenna and the source electrode, the middle of the first transmission line is connected to one end of a second transmission line, and the other end of the second transmission line is grounded.
Preferably, the voltage feedback loop includes a first resistor connected to two ends of the low noise preamplifier, a second resistor, a second blocking capacitor and ground are sequentially connected to a left end of the first resistor connected to a negative electrode of the low noise preamplifier, and a third blocking capacitor and ground are sequentially connected to a right end of the first resistor.
The invention also provides a design method of the on-chip dielectric resonance terahertz antenna, which comprises the following steps:
s1: the resonant mode isIn TEm,,nIn the mode, the three-dimensional size of the rectangular dielectric resonance block is calculated by solving a transcendental equation:
Figure BDA0001918056880000031
wherein c is the speed of light, fmnTherefore, the working frequency of the rectangular dielectric resonance block in the mode is obtained;
s2: in the design process of the on-chip excitation structure, a top-layer Metal6 is selected to design the gap structure, a bottom-layer Metal1 is selected as a Metal bottom plate, and a middle Metal layer and a Metal via hole are stacked to form a Metal shielding cavity which surrounds the H-shaped gap structure;
s3: selecting a proper insulating glue layer to combine the rectangular dielectric resonance block with the H-shaped gap structure on the chip;
s4: and simulating the on-chip dielectric resonance terahertz antenna by using high-frequency structure simulation analysis software.
Preferably, the resonant mode of the rectangular dielectric resonant block in S1 is a high-order resonant mode TE1,,3And the transcendental equation is solved through Matlab programming of mathematical software to obtain the three-dimensional dimensions W of the rectangular dielectric resonance block at the frequency of 300GHzDR＝250μm,LDR＝250μm,HDR400 μm; in the S2, each size of the H-shaped gap structure is l1＝70μm,l2＝220μm,ws＝9.5μm,w1＝15μm,w2＝10μm,w 310 μm; the insulating glue layer is made of heat-stable insulating glue with the relative dielectric constant of 2.4 and the thickness of 10 mu m; the high-frequency structure simulation analysis software is HFSS.
Preferably, in the transcendental equation of the S1,
Figure BDA0001918056880000032
compared with the prior art, the technical scheme of the invention has the following advantages:
technical problem to be solved by technical scheme of the inventionThe on-chip terahertz antenna in the existing terahertz detector has the defects of large loss, low gain and radiation efficiency and the like. The technical scheme of the invention is realized by enabling the high-order mode TE with low loss characteristic1,,3Compared with the traditional NMOSFET terahertz detector based on-chip dipole, patch and other terahertz antennas, the NMOSFET terahertz detector based on the on-chip dielectric resonance terahertz antenna provided by the invention realizes lower loss of the on-chip terahertz antenna and higher gain and radiation efficiency of the on-chip terahertz antenna, thereby effectively improving the detection efficiency and detection sensitivity of the NMOSFET terahertz detector.
In addition, the output voltage signal is a direct current voltage signal, and the magnitude of the direct current voltage signal is in direct proportion to the radiation intensity of the terahertz signal, so that the intensity information of the incident terahertz signal can be conveniently obtained according to the magnitude of the output voltage signal of the terahertz detector, and accurate terahertz detection is finally realized.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an NMOSFET terahertz detector based on a dielectric resonant antenna according to the invention;
FIG. 2 is a schematic structural diagram of an on-chip dielectric resonant terahertz antenna according to the present invention;
FIG. 3 is a schematic structural diagram of a rectangular dielectric resonator block according to the present invention;
FIG. 4 is a schematic structural diagram of an on-chip H-shaped slot structure of the present invention;
FIG. 5 is a graph showing the variation of return loss S11 with frequency of the on-chip dielectric resonator terahertz antenna according to the present invention;
FIG. 6 is a graph showing the variation of gain with frequency of the on-chip dielectric resonant terahertz antenna of the present invention;
fig. 7 is a radiation pattern of the on-chip dielectric resonant terahertz antenna of the present invention.
The reference numbers illustrate:
Figure BDA0001918056880000041
Figure BDA0001918056880000051
the implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative positional relationship between the components, the movement situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The invention provides an NMOSFET terahertz detector based on a dielectric resonant antenna and a design method of an on-chip dielectric resonant terahertz antenna.
Referring to fig. 1, in the embodiment of the present invention, the NMOSFET terahertz detector based on the dielectric resonator antenna includes an on-chip dielectric resonator terahertz antenna 4, the on-chip dielectric resonator terahertz antenna 4 is connected to a matching network 5, the matching network 5 is connected to a source 31 of the NMOSFET3, a gate 33 of the NMOSFET3 is sequentially connected to a first bias resistor 2 and a first bias voltage 1, an open-circuited quarter-wavelength third transmission line 15 is connected between the gate 33 and the first bias resistor 2, a drain 32 of the NMOSFET3 is connected to a first dc blocking capacitor 6, the other end of the first dc blocking capacitor 6 is connected to a low noise preamplifier 9, a second bias resistor 8 is connected between the first dc blocking capacitor 6 and the low noise preamplifier 9, the other end of the second bias resistor 8 is connected to a first bias voltage 7, so as to provide a dc power for the low noise preamplifier 9, in addition, the low noise preamplifier 9 is connected with a voltage feedback loop.
Referring to fig. 2 to 4, specifically, the on-chip dielectric resonant terahertz antenna 4 of the present embodiment includes an on-chip H-shaped slot structure 41 and a rectangular dielectric resonant block 43, and the rectangular dielectric resonant block 43 is disposed on the surface of the on-chip H-shaped slot structure 41 through an insulating adhesive layer 42. The on-chip H-shaped slot structure 41 of the present embodiment is formed on the surface of the integration process top metal 44 and is located in the metal cavity 415 formed by stacking the middle layer metal and the metal via in the integration process except the integration process top metal 44 and the integration process bottom metal 416.
Referring to fig. 4, more specifically, the on-chip H-shaped slot structure 41 of the present embodiment includes two parallel left and right vertical slots 411 and 412, wherein opposite sides of the left and right vertical slots 411 and 412 are respectively connected to left and right slots 413 and 414 in an inverted L shape, a horizontal portion of the left slot 413 is connected to a middle portion of the corresponding left vertical slot 411, a horizontal portion of the right slot 414 is connected to a middle portion of the corresponding right vertical slot 412, and vertical portions of the left and right slots 413 and 414 are parallel to each other and form two lead-out slots for connecting the antenna to an external structure.
Preferably, the H-shaped slot structure 41 of the present embodiment is formed by silicon-based process design, so as to excite the rectangular dielectric resonator 43 covering the H-shaped slot structure and optimize the impedance matching effect. In addition, the insulating glue layer 42 has good thermal stability, and is used for fixing the rectangular dielectric resonator block 43 on the surface of the sheet excitation structure.
More preferably, the rectangular dielectric resonator block 43 of the present embodiment is selected to have a relatively large dielectric constant, for example, a relative dielectric constant > 5, so that the insulating material is dimensioned to couple and radiate the electromagnetic field into space, and the rectangular dielectric resonator mode of the present embodiment is TE1,,3And (5) molding. The center frequency of the design of the on-chip dielectric resonance terahertz antenna 4 is 300GHz, magnesium oxide with the relative dielectric constant of 9.65 is used as a rectangular dielectric resonance block material, and the on-chip structure is designed by selecting the parameters of a 0.18mGeSiBiCMOS process (Towerjazz SBC18H3), wherein six layers of Metal1-Metal6 and five layers of Metal Via holes Via1-Via5 are adopted in the process.
The matching network 5 of the present embodiment is formed by two microstrip transmission lines, i.e., a first transmission line 51 and a second transmission line 52, and the matching network 5 is mainly used to improve the power transmission efficiency between the antenna and the transistor and provide a dc ground for the source (S) of the transistor. The left end of the microstrip first transmission line 51 is connected with the on-chip dielectric resonance terahertz antenna 4, and the right end of the microstrip first transmission line 51 is connected with the source electrode 31 of the NMOSFET 3.
The gate 33 of the NMOSFET3 of this embodiment is loaded with a fixed first bias voltage 1 and a first bias resistor 2, and an open-circuited quarter-wave third transmission line 53 is connected between the gate 33 of the NMOSFET and the first bias resistor 2, where the open-circuited quarter-wave third transmission line 53 is mainly used to eliminate the influence of the gate dc bias on the impedance matching between the antenna and the transistor.
A first blocking capacitor 6, a second bias voltage 7 and a second bias resistor 8 are connected between the drain 32 of the NMOSFET3 and the forward input end of the low noise preamplifier 9 in this embodiment, wherein the second bias voltage 7 and the second bias resistor 8 are used for supplying power to the low noise preamplifier 9.
The voltage feedback loop of the low noise preamplifier 9 of the present embodiment mainly comprises a first resistor 10, a second resistor 11, a second blocking capacitor 12 and a third blocking capacitor 14, wherein the gain of the low noise preamplifier 9 can be adjusted by changing the resistance values of the first resistor 10 and the first resistor 11.
Referring to fig. 1 to 7, the design of the on-chip dielectric resonant terahertz antenna according to the embodiment of the present invention specifically includes the following design steps:
1. a rectangular dielectric resonator mass 43 design. The resonant mode being at TEm,,nIn this mode, the dimensions of the rectangular dielectric resonator mass 43, as shown in FIG. 3, can be calculated and solved by solving transcendental equation (1):
Figure BDA0001918056880000071
Figure BDA0001918056880000072
wherein the formula (2) is the parameter interpretation of the formula (1), c is the speed of light, fmnFor the working frequency of the rectangular dielectric resonator 43 in this mode, the resonant mode of the rectangular dielectric resonator 43 in this embodiment is a high-order resonant mode TE1,,3The mode, has a higher gain compared to the fundamental mode. Solving transcendental equation (1) through mathematic software Matlab programming, and obtaining the dimensions of the rectangular dielectric resonance block 43 at the frequency of 300GHz as follows: wDR＝250μm,LDR＝250μm,HDR＝400μm。
2. And (4) designing an on-chip excitation structure. As shown in fig. 4, the on-chip H-shaped slot structure 41 is designed by using a top-layer Metal6, and simultaneously, a bottom-layer Metal1 is used as a Metal bottom plate to suppress electromagnetic waves from propagating to a high-loss silicon-based substrate, and a middle Metal layer and Metal vias are stacked to form a Metal shielding cavity surrounding the H-shaped slot structure to suppress electromagnetic leakage and reduce loss.
The dimension parameters of the H-shaped gap structure are respectively as follows:
l1＝70μm,l2＝220μm,ws＝9.5μm,w1＝15μm,w2＝10μm,w3＝10μm
3. the selection of the insulating glue layer 42. The insulating glue layer 42 is made of thermal-stability insulating glue with a relative dielectric constant of 2.4 and a thickness of 10 μm, and is used for combining the rectangular dielectric resonant block 43 and the on-chip H-shaped gap structure 41.
4. And simulating the on-chip dielectric resonance terahertz antenna by using high frequency structure simulation analysis software (HFSS). FIG. 5 is the variation of the return loss S11 of the on-chip dielectric resonator terahertz antenna 4 with frequency, wherein the impedance matching bandwidth of the on-chip dielectric resonator terahertz antenna is 15.2% (273-318 GHz) at-10 dB. Fig. 6 is a variation of gain with frequency of the on-chip dielectric resonator thz antenna 4, wherein the peak gain of the on-chip dielectric resonator thz antenna 4 is 5.77dBi and the 3dB gain bandwidth is 13.7% (270-310 GHz), and the radiation pattern of the on-chip dielectric resonator thz antenna is shown in fig. 7, wherein the radiation efficiency of the dielectric resonator antenna is 71%.
According to the technical scheme, the output voltage signal of the NMOSFET terahertz detector based on the dielectric resonant antenna is a direct-current voltage signal, the magnitude of the direct-current voltage signal is in direct proportion to the radiation intensity of the terahertz signal, and the intensity information of the incident terahertz signal can be obtained according to the magnitude of the output voltage signal of the terahertz detector, so that terahertz detection is achieved.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.

Claims (4)

1. The terahertz detector is characterized by comprising an on-chip dielectric resonance terahertz antenna, wherein the on-chip dielectric resonance terahertz antenna is connected with a matching network, the matching network is connected with a source electrode of the NMOSFET, a grid electrode of the NMOSFET is sequentially connected with a first bias resistor and a first bias voltage, a third transmission line is connected between the first bias resistor and the grid electrode, a drain electrode of the NMOSFET is connected with a first blocking capacitor, the other end of the first blocking capacitor is connected with a low-noise preamplifier, a second bias resistor and a second bias voltage are connected in parallel between the first blocking capacitor and the low-noise preamplifier, and the low-noise preamplifier is further provided with a voltage feedback loop;
the on-chip dielectric resonance terahertz antenna comprises an on-chip H-shaped gap structure and a rectangular dielectric resonance block which is connected to the surface of the on-chip H-shaped gap structure through an insulating adhesive layer;
the on-chip H-shaped gap structure is formed on the surface of the top metal layer of the integration process and is positioned in a metal cavity formed by stacking the middle metal layer and the metal via hole in the integration process except the top metal layer of the integration process and the bottom metal layer of the integration process;
the H-shaped gap structure on the sheet comprises a left vertical gap and a right vertical gap which are arranged in parallel, and one sides of the left vertical gap and the right vertical gap, which are opposite, are respectively connected with a left side gap and a right side gap which are in an inverted L shape;
the horizontal part of the left gap is connected to the middle part of the left vertical gap, the horizontal part of the right gap is connected to the middle part of the right vertical gap, and the vertical parts in the left gap and the right gap are parallel to each other and form two lead-out gaps for connecting the antenna with an external structure;
the design method of the antenna comprises the following steps:
s1: the resonant mode being at TEm,,nIn the mode, the three-dimensional size of the rectangular dielectric resonance block is calculated by solving a transcendental equation:
Figure FDA0002493849880000011
s2: in the design process of the on-chip excitation structure, a top-layer Metal6 is selected to design the gap structure, a bottom-layer Metal1 is selected as a Metal bottom plate, and a middle Metal layer and a Metal via hole are stacked to form a Metal shielding cavity which surrounds the H-shaped gap structure;
s3: selecting a proper insulating glue layer to combine the rectangular dielectric resonance block with the H-shaped gap structure on the chip;
s4: simulating the on-chip dielectric resonance terahertz antenna by using high-frequency structure simulation analysis software;
in the transcendental equation of the step S1,
Figure FDA0002493849880000021
wherein c is the speed of light, fmnFor this mode, the operating frequency of the rectangular dielectric resonator block.
2. The NMOSFET terahertz detector based on the dielectric resonator antenna as claimed in claim 1, wherein the matching network comprises a first transmission line with two ends respectively connected with the on-chip dielectric resonator terahertz antenna and the source electrode, the middle part of the first transmission line is connected with one end of a second transmission line, and the other end of the second transmission line is grounded.
3. The NMOSFET terahertz detector based on the dielectric resonator antenna as claimed in claim 1, wherein the voltage feedback loop comprises a first resistor connected with two ends of the low noise preamplifier, a second resistor, a second blocking capacitor and ground are further connected with the left end portion of the first resistor connected with the negative electrode of the low noise preamplifier in sequence, and a third blocking capacitor and ground are further connected with the right end of the first resistor in sequence.
4. The NMOSFET terahertz detector based on the dielectric resonator antenna as claimed in claim 1, wherein the rectangular dielectric is used in step S1The resonant mode of the resonant block adopts a high-order resonant mode TE1,,3And the transcendental equation is solved through Matlab programming of mathematical software to obtain the three-dimensional dimensions W of the rectangular dielectric resonance block at the frequency of 300GHzDR＝250μm,LDR＝250μm,HDR400 μm; in the S2, each size of the H-shaped gap structure is l1＝70μm,l2＝220μm,ws＝9.5μm,w1＝15μm,w2＝10μm,w310 μm; the insulating glue layer is made of heat-stable insulating glue with the relative dielectric constant of 2.4 and the thickness of 10 mu m; the high-frequency structure simulation analysis software is HFSS.
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CN110380187B (en) * 2019-06-05 2021-01-05 广东工业大学 Terahertz detector based on DRA and NxM NMOSFET array and antenna design method
CN112131817B (en) * 2020-09-28 2023-10-31 北京国联万众半导体科技有限公司 Millimeter wave monolithic integrated design method
CN113030006B (en) * 2021-03-08 2022-03-25 西南科技大学 Reflection-type terahertz micro-flow sensor with irregular U-shaped metal microstructure
CN113204875B (en) * 2021-04-30 2023-02-28 中国人民解放军海军工程大学 Broadband phased array antenna modeling method and device and electronic equipment
CN113394574B (en) * 2021-06-17 2023-03-24 网络通信与安全紫金山实验室 Terahertz oscillator integrated with differential antenna and field path fusion method thereof
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Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5913154A (en) * 1997-04-18 1999-06-15 Ericsson, Inc. VSWR control technique for terminal products with linear modulation
US7375603B2 (en) * 2003-10-03 2008-05-20 Stmicroelectronics S.A. Integrated coupler
US8000737B2 (en) * 2004-10-15 2011-08-16 Sky Cross, Inc. Methods and apparatuses for adaptively controlling antenna parameters to enhance efficiency and maintain antenna size compactness
US7791556B2 (en) * 2005-05-31 2010-09-07 Farrokh Mohamadi Transmission line distributed oscillator
US7595766B2 (en) * 2006-12-29 2009-09-29 Broadcom Corporation Low efficiency integrated circuit antenna
US8095085B2 (en) * 2007-06-08 2012-01-10 Arizona Board Of Regents For And On Behalf Of Arizona State University Automatic antenna tuning unit for software-defined and cognitive radio
US7859474B1 (en) * 2008-08-07 2010-12-28 Rockwell Collins, Inc. Active antenna tuning circuitry
US8952858B2 (en) * 2009-06-17 2015-02-10 L. Pierre de Rochemont Frequency-selective dipole antennas
US9300038B2 (en) * 2010-12-10 2016-03-29 Peregrine Semiconductor Corporation Method, system, and apparatus for resonator circuits and modulating resonators
JP6373010B2 (en) * 2013-03-12 2018-08-15 キヤノン株式会社 Oscillating element
CN103762420B (en) * 2014-02-25 2016-08-17 中国工程物理研究院电子工程研究所 A kind of THz wave back cavity type sheet carries antenna
CN105300530B (en) * 2015-11-10 2018-07-31 中国科学院半导体研究所 Terahertz wave detector with reading circuit
CN106229644B (en) * 2016-07-08 2019-07-09 天津理工大学 A kind of multifrequency Terahertz slot antenna and its preparation method and application
CN108332863A (en) * 2017-01-19 2018-07-27 天津大学 A kind of terahertz detector based on monopole antenna realization integrated with NMOS temperature sensors
CN107959118B (en) * 2017-11-20 2020-09-25 上海交通大学 Implementation method of filtering antenna for suppressing mutual coupling between channels based on cross coupling
CN108180931A (en) * 2017-12-28 2018-06-19 中国科学院半导体研究所 A kind of terahertz wave detector

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