CN108461912B - Terahertz microstrip antenna - Google Patents
Terahertz microstrip antenna Download PDFInfo
- Publication number
- CN108461912B CN108461912B CN201810266835.XA CN201810266835A CN108461912B CN 108461912 B CN108461912 B CN 108461912B CN 201810266835 A CN201810266835 A CN 201810266835A CN 108461912 B CN108461912 B CN 108461912B
- Authority
- CN
- China
- Prior art keywords
- rectangular patch
- patch
- parasitic
- rectangular
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003071 parasitic effect Effects 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 230000005855 radiation Effects 0.000 claims abstract description 37
- 239000004593 Epoxy Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000004891 communication Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/48—Earthing means; Earth screens; Counterpoises
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
- H01Q1/521—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure reducing the coupling between adjacent antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
- H01Q5/30—Arrangements for providing operation on different wavebands
- H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
- H01Q5/314—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
- H01Q5/335—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors at the feed, e.g. for impedance matching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
Landscapes
- Waveguide Aerials (AREA)
Abstract
The invention discloses a terahertz microstrip antenna, which comprises: the antenna comprises a grounding plate, a dielectric substrate, a DGS structure, a rectangular radiation patch, a quarter-impedance converter and a 50-omega microstrip line; the DGS structure is arranged on the grounding plate, a first medium substrate is arranged above the grounding plate, a rectangular radiation patch is arranged above the first medium substrate, a 45-degree rectangular patch and a 135-degree rectangular patch are arranged on two sides of the rectangular radiation patch, a quarter-impedance converter and a 50-omega microstrip line are arranged behind the rectangular radiation patch, a second medium substrate is arranged on the edge of the rectangular radiation patch, and a fifth parasitic rectangular patch is arranged above the second medium substrate. The antenna has two working frequency bands, is high in gain, simple and novel in structure and easy to realize.
Description
Technical Field
The invention relates to the technical field of electromagnetic wave devices, in particular to a terahertz microstrip antenna.
Background
With the rapid development of communication systems and wireless transmission fields, microwave communication has not been able to meet the demand of people for wireless communication, and therefore, it is a latest development trend to find a new band to meet the development demand of digital communication technology. Many scientists and researchers have now focused on the terahertz band. Therefore, terahertz waves have advantages that microwaves cannot have: the transmission quantity is large, and when the terahertz antenna is used in a communication system, the antenna can obtain the transmission speed of 10 Gbit/s. With continuous breakthrough and development of THZ technology, devices working in the THZ frequency band become hot spots for domestic and foreign research, wherein THZ filters of THZ antennas and the like are important directions for research.
DGS (defected ground structure) is an aperiodic or periodic cascade configuration defect provided in the ground plane of a coplanar or microstrip or conductor-backed coplanar waveguide. This drawback is provided to disturb the current distribution of the patch antenna, which in turn is due to variations in the characteristics of the effective capacitance and inductance of the microstrip patch antenna.
Microstrip antennas have found wide application due to their unique advantages, such as small size, low cost, and ease of integration with a carrier. The realization of dual-band or multi-band antenna and antenna gain enhancement on microstrip patch antennas has led to extensive research in the industry. The microstrip dual-frequency antenna is mostly realized by adopting the following method: for example, two layers of different dielectric layers are adopted, so that the antenna can meet the performance requirements at 600GHz and 800GHz, and the dual-frequency characteristic of the antenna at the THz frequency band is realized; there are many methods for increasing the gain of the antenna, such as: and loading a complex Electromagnetic Band Gap (EBG) structure around the radiation patch. The conventional terahertz dual-frequency microstrip antenna adopts multiple dielectric layers or artificial electromagnetic materials with complex loading, so that the structure of the antenna is complex, the processing is complex, and the realization is inconvenient.
Disclosure of Invention
Therefore, a terahertz microstrip antenna which is simple in structure and easy to implement is needed.
In order to achieve the purpose, the invention provides the following scheme:
a terahertz microstrip antenna, comprising: the antenna comprises a grounding plate, a first dielectric substrate, a DGS structure, a second dielectric substrate, a rectangular radiation patch, a 45-degree rectangular patch, a 135-degree rectangular patch, a quarter-impedance converter, a 50-omega microstrip line, a first parasitic rectangular patch, a second parasitic rectangular patch, a third parasitic rectangular patch, a fourth parasitic rectangular patch and a fifth parasitic rectangular patch, wherein the DGS structure comprises a first gap, a second gap and a third gap;
the DGS structure is arranged on the grounding plate, a first gap of the DGS structure is parallel to a third gap, and a second gap is positioned between the first gap and the third gap and is vertically intersected with the first gap and the third gap respectively;
the first medium substrate is positioned above the grounding plate, the rectangular radiation patch is arranged on the first medium substrate, the 45-degree rectangular patch and the 135-degree rectangular patch are respectively arranged at two top corners of the upper end of the rectangular radiation patch, and the middle part of the lower end of the rectangular radiation patch is connected with the quarter-impedance converter and the 50-omega microstrip line;
the second medium substrate is located above the first medium substrate, the first parasitic rectangular patch, the second parasitic rectangular patch, the third parasitic rectangular patch, the fourth parasitic rectangular patch and the fifth parasitic rectangular patch are arranged on the second medium substrate, two ends of the first parasitic rectangular patch are communicated with the second parasitic rectangular patch and the third parasitic rectangular patch and are right-angled, the right lower portion of the second parasitic rectangular patch is communicated with the fourth parasitic rectangular patch and is aligned with the fifth parasitic rectangular patch, and the left lower portion of the third parasitic rectangular patch is communicated with the fifth parasitic rectangular patch and is aligned with the fifth parasitic rectangular patch.
Optionally, the length and width of the 45 ° rectangular patch and the 135 ° rectangular patch are the same.
Optionally, the rear end of the quarter-impedance converter is connected to the front end of the 50 Ω microstrip line.
Optionally, the second dielectric substrate is completely covered by the first parasitic rectangular patch, the second parasitic rectangular patch, the third parasitic rectangular patch, the fourth parasitic rectangular patch, and the fifth parasitic rectangular patch.
Optionally, the second parasitic rectangular patch and the third parasitic rectangular patch have the same size, and the fourth parasitic rectangular patch and the fifth parasitic rectangular patch have the same size.
Optionally, the bottom edge of the first dielectric substrate is a square, and the side length of the metal ground plate of the square is equal to the side length of the bottom edge of the dielectric substrate.
Optionally, the size of the rectangular radiation patch is smaller than that of the dielectric substrate.
Optionally, the type of the dielectric substrate is FR 4-epoxy.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a terahertz microstrip antenna, which comprises: the antenna comprises a grounding plate, a first dielectric substrate, a DGS structure, a second dielectric substrate, a rectangular radiation patch, a 45-degree rectangular patch, a 135-degree rectangular patch, a quarter-impedance converter, a 50-omega microstrip line, a first parasitic rectangular patch, a second parasitic rectangular patch, a third parasitic rectangular patch, a fourth parasitic rectangular patch and a fifth parasitic rectangular patch; the DGS structure is arranged on the grounding plate; the first medium substrate is positioned above the grounding plate, a rectangular radiation patch is arranged on the first medium substrate, two top corners of the upper end of the rectangular radiation patch are respectively provided with a 45-degree rectangular patch and a 135-degree rectangular patch, and the middle part of the lower end of the rectangular radiation patch is connected with a quarter-impedance converter and a 50-omega microstrip line; the second medium substrate is arranged above the first medium substrate, and the second medium substrate is provided with a first parasitic rectangular patch, a second parasitic rectangular patch, a third parasitic rectangular patch, a fourth parasitic rectangular patch and a fifth parasitic rectangular patch. According to the invention, the high-frequency band impedance bandwidth is widened through the 45-degree rectangular patch and the 135-degree rectangular patch, the DGS structure is arranged on the grounding plate, so that the antenna has a low-frequency resonance point, the second dielectric substrate, the first parasitic rectangular patch, the second parasitic rectangular patch, the third parasitic rectangular patch, the fourth parasitic rectangular patch and the fifth parasitic rectangular patch are used for enhancing the gain of the antenna. The antenna has two working frequency bands, and is simple and novel in structure and easy to realize.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of a terahertz microstrip antenna according to an embodiment of the present invention;
FIG. 2 is a side view of a terahertz microstrip antenna according to an embodiment of the present invention;
FIG. 3 is a rear view of a terahertz microstrip antenna according to an embodiment of the present invention;
FIG. 4 is a scattering parameter diagram of a terahertz microstrip antenna according to an embodiment of the present invention;
FIG. 5 is an E-plane radiation pattern of a terahertz microstrip antenna at 520GHZ according to an embodiment of the present invention;
FIG. 6 is an H-plane radiation pattern of a terahertz microstrip antenna at 520GHZ according to an embodiment of the present invention;
FIG. 7 is an E-plane radiation pattern of a terahertz microstrip antenna at 680GHZ according to an embodiment of the present invention;
fig. 8 is an H-plane radiation pattern of the thz microstrip antenna at 680GHZ according to the embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Fig. 1 is a schematic structural diagram of a thz microstrip antenna according to an embodiment of the present invention, fig. 2 is a side view of the thz microstrip antenna according to the embodiment of the present invention, and fig. 3 is a rear view of the thz microstrip antenna according to the embodiment of the present invention.
Referring to fig. 1, fig. 2 and fig. 3, the terahertz microstrip antenna in the embodiment includes a ground plate 1, a DGS structure, a first dielectric substrate 10, a rectangular radiation patch 6, a 45 ° rectangular patch, a 135 ° rectangular patch 7, a quarter impedance converter 8, a 50 Ω microstrip 9, a second dielectric substrate 5, a first parasitic rectangular patch, a second parasitic rectangular patch, a third parasitic rectangular patch, a fourth parasitic rectangular patch, a fifth parasitic rectangular patch 15, and a DGS structure including a first slot 2, a second slot 3, and a third slot 4;
the grounding plate 1 is a square metal grounding plate, and the size of the grounding plate is 300um to 300 um; the DGS structure is arranged on the grounding plate 1, a first gap and a third gap of the DGS structure are parallel, and a second gap is positioned between the first gap and the third gap and is respectively and vertically intersected with the first gap and the third gap; first gap length is 204um in the DGS structure, and the width is 2um, and just first gap is apart from the marginal distance D of ground plate060um, the second gap length is 44um, the width is 10um, the third gap length is 74um, and the width is 8 um;
the first dielectric substrate 10 is positioned above the ground plate 1, the material of the first dielectric substrate 10 is FR4-epoxy, and the dielectric constant epsilon of the first dielectric substrate 10r4.4, size 300um 50 um; the rectangular radiation patch 6 is arranged on the first dielectric substrate 10, and the size of the rectangular radiation patch 6 is 120um to 120 um; the 45-degree rectangular patch and the 135-degree rectangular patch 7 are arranged at two top corners of the upper end of the rectangular radiation patch 6, the two rectangular patches of the 45-degree rectangular patch and the 135-degree rectangular patch 7 are completely the same in size, and the size of each rectangular patch is 84um by 26 um; the middle part of the lower end of the rectangular radiation patch 6 is provided with the quarter impedance converter 8 and the 50 omega microstrip line 9, the length of the quarter impedance converter 8 is 60um, the width of the quarter impedance converter is 28um, the length of the 50 omega microstrip line 9 is 30um, and the width of the 50 omega microstrip line is 34 um;
the second dielectric substrate 5 is located above the first dielectric substrate 10, the second dielectric substrate 5 is completely covered by a first parasitic rectangular patch 11, a second parasitic rectangular patch 12, a third parasitic rectangular patch 13, a fourth parasitic rectangular patch 14 and a fifth parasitic rectangular patch 15, the height of the second parasitic rectangular patch 5 is 80um, the first parasitic rectangular patch 11 covers the upper part of the second dielectric substrate 5 and is aligned with the upper edge thereof, the size of the first parasitic rectangular patch 11 is 300um 26um, the upper end of the second parasitic rectangular patch 12 is aligned and communicated with the lower edge of the first parasitic rectangular patch, the left end and the lower end of the second dielectric substrate 5 are aligned, the size of the third parasitic rectangular patch 13 is 13um 274um, the right end of the third parasitic rectangular patch 13 is aligned with the right end and the lower end of the second dielectric substrate 5, the size of the second parasitic rectangular patch is completely the same as that of the second parasitic rectangular patch, the left end and the lower end of the fourth parasitic rectangular patch 14 are communicated with the right end of the second parasitic rectangular patch, the size is 67um 190um, the fifth parasitic rectangular patch 15 right-hand member and lower extreme with the third parasitic rectangular patch left end aligns with lower extreme UNICOM, and the size is identical with the fourth parasitic rectangular patch.
In the embodiment, the specific arrangement positions, lengths and widths of the first gap, the second gap and the third gap of the DGS structure are obtained by optimizing various size parameters by using ANSYS HFSS electromagnetic simulation software.
In the terahertz microstrip antenna in the embodiment, the feeding port of the antenna is matched with the impedance of the rectangular radiation patch through the 50-ohm microstrip line and the quarter impedance converter, the impedance bandwidth of a high frequency band is expanded by the 45-degree rectangular patch and the 135-degree rectangular patch, and the antenna generates a resonance point of a low frequency band due to the DGS structure, so that the antenna has two working frequency bands, and the parasitic rectangular patch and the second dielectric substrate obviously improve the gain of the antenna. The antenna has simple structure and is easy to realize; in the embodiment, through optimization of various size parameters of the antenna, the antenna has the characteristics of low loss, good radiation performance, small size, light weight and easiness in integration; in addition, the antenna working in the two frequency bands in the embodiment has uniform current distribution, and can effectively improve the communication quality of the antenna.
In this embodiment, ANSYS HFSS electromagnetic simulation software is also used to verify the radiation parameter performance of the antenna.
Fig. 4 is a scattering parameter diagram of a thz microstrip antenna according to an embodiment of the present invention.
Referring to fig. 4, from a scattering (S) parameter diagram of the thz microstrip antenna, it can be seen that the antenna has two resonance points, one is near 520GHZ, the operating frequency range below-10 dB is 508 GHZ-532 GHZ, the lowest return loss can reach-25.9 dB, the relative bandwidth is 4.8%, and the other is near 680GHZ, the operating frequency range below-10 dB is 581 GHZ-766 GHZ, the lowest return loss can reach-35.4 dB, and the relative bandwidth is 27.5%.
Fig. 5 is an E-plane radiation pattern of the thz microstrip antenna at 520GHZ according to the embodiment of the present invention, and fig. 6 is an H-plane radiation pattern of the thz microstrip antenna at 520GHZ according to the embodiment of the present invention.
Referring to fig. 5 and 6, from the E-plane and H-plane radiation patterns of the thz microstrip antenna at 520GHZ, it can be seen that the maximum gain of the thz microstrip antenna at 520GHZ is 3.54 dB. The plane E refers to the plane defined by the maximum beam pointing direction of the antenna, namely the gain direction, the electric field and the beam pointing direction, and the plane H refers to the plane defined by the maximum beam pointing direction of the antenna, namely the gain direction, the magnetic field and the beam pointing direction.
Fig. 7 is an E-plane radiation pattern of the thz microstrip antenna at 680GHZ according to the embodiment of the present invention, and fig. 8 is an H-plane radiation pattern of the thz microstrip antenna at 680GHZ according to the embodiment of the present invention.
Referring to fig. 7 and 8, from the E-plane and H-plane radiation patterns of the thz microstrip antenna at 680GHZ, it can be seen that the maximum gain of the thz microstrip antenna at 680GHZ is 4.11 dB.
The terahertz microstrip antenna in the embodiment has two working frequency bands, wherein the working frequency bands below-10 dB are 508 GHz-532 GHz and 581 GHz-766 GHz respectively, the resonance frequency points are 520GHZ and 680GHZ respectively, the lowest return loss can reach-25.9 dB and-35.4 dB respectively, the performances of gain, return loss and the like are good, and the dual-frequency-band working requirement of the antenna in the terahertz frequency band can be met.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (8)
1. A terahertz microstrip antenna is characterized by comprising: the antenna comprises a grounding plate, a first dielectric substrate, a DGS structure, a second dielectric substrate, a rectangular radiation patch, a 45-degree rectangular patch, a 135-degree rectangular patch, a quarter-impedance converter, a 50-omega microstrip line, a first parasitic rectangular patch, a second parasitic rectangular patch, a third parasitic rectangular patch, a fourth parasitic rectangular patch and a fifth parasitic rectangular patch, wherein the DGS structure comprises a first gap, a second gap and a third gap;
the DGS structure is arranged on the grounding plate, a first gap of the DGS structure is parallel to a third gap, and a second gap is positioned between the first gap and the third gap and is vertically intersected with the first gap and the third gap respectively;
the first medium substrate is positioned above the grounding plate, the rectangular radiation patch is arranged on the first medium substrate, the 45-degree rectangular patch and the 135-degree rectangular patch are respectively arranged at two top corners of the upper end of the rectangular radiation patch, and the middle part of the lower end of the rectangular radiation patch is connected with the quarter-impedance converter and the 50-omega microstrip line;
the second medium substrate is located above the first medium substrate, the first parasitic rectangular patch, the second parasitic rectangular patch, the third parasitic rectangular patch, the fourth parasitic rectangular patch and the fifth parasitic rectangular patch are arranged on the second medium substrate, two ends of the first parasitic rectangular patch are communicated with the second parasitic rectangular patch and the third parasitic rectangular patch and are right-angled, the right lower portion of the second parasitic rectangular patch is communicated with the fourth parasitic rectangular patch and is aligned with the fifth parasitic rectangular patch, and the left lower portion of the third parasitic rectangular patch is communicated with the fifth parasitic rectangular patch and is aligned with the fifth parasitic rectangular patch.
2. The thz microstrip antenna according to claim 1, wherein the 45 ° rectangular patch and the 135 ° rectangular patch have the same length and width dimensions.
3. The thz microstrip antenna according to claim 1, wherein a rear end of the quarter-impedance converter is connected to a front end of the 50 Ω microstrip line.
4. The thz microstrip antenna according to claim 1, wherein the second dielectric substrate is completely covered by the first, second, third, fourth and fifth parasitic rectangular patches.
5. The thz microstrip antenna according to claim 1, wherein the second parasitic rectangular patch and the third parasitic rectangular patch are identical in size, and the fourth parasitic rectangular patch and the fifth parasitic rectangular patch are identical in size.
6. The thz microstrip antenna according to claim 1, wherein the bottom edge of the first dielectric substrate is a rectangular parallelepiped with a square shape, and the side length of the metal ground plate with the square shape is equal to the side length of the bottom edge of the dielectric substrate.
7. The thz microstrip antenna according to claim 1, wherein the rectangular radiating patch has a size smaller than that of the dielectric substrate.
8. The thz microstrip antenna according to claim 1, wherein the dielectric substrate is FR 4-epoxy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810266835.XA CN108461912B (en) | 2018-03-28 | 2018-03-28 | Terahertz microstrip antenna |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810266835.XA CN108461912B (en) | 2018-03-28 | 2018-03-28 | Terahertz microstrip antenna |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108461912A CN108461912A (en) | 2018-08-28 |
| CN108461912B true CN108461912B (en) | 2020-02-18 |
Family
ID=63237723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810266835.XA Expired - Fee Related CN108461912B (en) | 2018-03-28 | 2018-03-28 | Terahertz microstrip antenna |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108461912B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109546329B (en) * | 2018-12-26 | 2024-02-02 | 东莞市仁丰电子科技有限公司 | Slot antenna |
| US11664589B2 (en) * | 2021-03-10 | 2023-05-30 | Synergy Microwave Corporation | 5G MIMO antenna array with reduced mutual coupling |
| CN114400440B (en) * | 2022-03-24 | 2022-06-24 | 之江实验室 | Broadband terahertz electromagnetic structure for photoelectric detection |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101931122A (en) * | 2010-08-27 | 2010-12-29 | 电子科技大学 | C/X dual-band microstrip antenna |
| CN103762420A (en) * | 2014-02-25 | 2014-04-30 | 中国工程物理研究院电子工程研究所 | Terahertz wave back cavity type chip-loaded antenna |
-
2018
- 2018-03-28 CN CN201810266835.XA patent/CN108461912B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101931122A (en) * | 2010-08-27 | 2010-12-29 | 电子科技大学 | C/X dual-band microstrip antenna |
| CN103762420A (en) * | 2014-02-25 | 2014-04-30 | 中国工程物理研究院电子工程研究所 | Terahertz wave back cavity type chip-loaded antenna |
Non-Patent Citations (3)
| Title |
|---|
| A Design of Rectangular Aeroplane Shape Defected Ground Structure (RADGS) Antenna for 2.4 GHz Applications;A.Zamah Shari等;《2015 Innovation & Commercialization of Medical Electronic Technology Conference (ICMET)》;20160411;第13-16页 * |
| A Novel Dual Band Microstrip Patch Antenna with DGS for X-band Applications;R. Kiruthika等;《 2017 International Conference on Computer, Communication and Signal Processing (ICCCSP)》;20170608;第1-5页 * |
| 基于双T型缝隙的新型太赫兹双频微带天线;王海锟;《光通信研究》;20170630(第3期);第75-78页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108461912A (en) | 2018-08-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN213753059U (en) | Multi-frequency low-SAR antenna and electronic equipment | |
| CN111082225B (en) | Miniaturized reconfigurable three-notch ultra-wideband antenna | |
| CN111262005B (en) | Dual-polarized broadband magnetoelectric dipole antenna unit suitable for 5G base station and antenna array | |
| CN108461912B (en) | Terahertz microstrip antenna | |
| CN105529530A (en) | Dual-band low-profile directive antenna | |
| Yang et al. | Design of compact ultrawideband slot antenna with improved band-edge selectivity | |
| CN111969307A (en) | Symmetrical multi-groove terahertz 6G communication application frequency band antenna | |
| CN212485554U (en) | Terahertz antenna suitable for 6G communication frequency band | |
| CN111541018B (en) | High-gain steep filtering fusion duplex integrated antenna | |
| Goodwill et al. | Dual band CSSRR inspired microstrip patch antenna for enhancing antenna performance and size reduction | |
| CN210897621U (en) | Novel ultra-wideband planar monopole antenna | |
| Khabba et al. | Beam-steering millimeter-wave antenna array for fifth generation smartphone applications | |
| CN214957354U (en) | Broadband miniaturization base station antenna and communication equipment | |
| CN116613545A (en) | Medium type artificial surface plasmon band-pass filtering array antenna | |
| CN110556629A (en) | novel ultra-wideband planar monopole antenna | |
| CN212182535U (en) | Novel butterfly-shaped slotted broadband terahertz antenna | |
| CN210640366U (en) | Microwave millimeter wave cross-frequency band double-frequency dual-polarization microstrip radiating unit | |
| CN110739536B (en) | Half-mode Vivaldi antenna and miniaturized large-angle frequency scanning antenna array | |
| CN113964534A (en) | Trapped wave ultra wide band antenna with two trapped wave characteristics | |
| CN109861003B (en) | Metamaterial broadband high-isolation MIMO antenna | |
| CN112467352A (en) | Wrench-shaped trapped wave reconfigurable ultra-wideband antenna | |
| CN111446538A (en) | Novel butterfly-shaped slotted broadband terahertz antenna | |
| CN110556628A (en) | Novel multi-frequency broadband microstrip antenna | |
| Gireesh et al. | DGS based Slotted Microstrip Patch Antenna for mm-Wave and 5G Applications | |
| Harika et al. | A Multiband Microstrip Patch Antenna with Rampart Line Structure for UWB Applications |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200218 |