CN114400440B - Broadband terahertz electromagnetic structure for photoelectric detection - Google Patents

Broadband terahertz electromagnetic structure for photoelectric detection Download PDF

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CN114400440B
CN114400440B CN202210294389.XA CN202210294389A CN114400440B CN 114400440 B CN114400440 B CN 114400440B CN 202210294389 A CN202210294389 A CN 202210294389A CN 114400440 B CN114400440 B CN 114400440B
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应小俊
沈思逸
邓庆文
尹坤
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Zhejiang Lab
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    • H01ELECTRIC ELEMENTS
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    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
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    • HELECTRICITY
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Abstract

The invention discloses a broadband terahertz electromagnetic structure for photoelectric detection, which comprises a substrate structure, wherein an electromagnetic energy radiation structure and a detector direct-current power supply structure are arranged on the upper surface of the substrate structure, the electromagnetic energy radiation structure adopts a coplanar waveguide form, the electromagnetic energy radiation structure comprises a coplanar waveguide and a main radiation structure, the coplanar waveguide comprises a middle rectangle and two side rectangles, and the main radiation structure is a circular connection structure. By continuously optimizing the structural parameters, the broadband electromagnetic structure working in the terahertz frequency band is finally obtained.

Description

Broadband terahertz electromagnetic structure for photoelectric detection
Technical Field
The invention relates to the field of signal detection and identification in the photoelectric field, in particular to a broadband terahertz electromagnetic structure for photoelectric detection.
Background
The photoelectric detection technology is one of the key technologies of modern communication technology, with the rapid increase of the communication speed demand, the transmission speed based on copper medium is far from meeting the current communication technology requirement, the high-speed signal transmission technology using optical fiber as the main transmission medium represents the development direction of future communication technology, and the technical trend of 'light entering copper and exiting' is more and more obvious. The photoelectric detection technology is a key part of the optical fiber high-speed signal transmission technology, plays an important role in optical signal quality detection and device performance judgment, is limited by the performance restriction of the frequency band of the existing test instrument equipment along with the continuous expansion of electromagnetic signals from millimeter waves to terahertz frequency bands, and is an important content in the field of photoelectric detection and identification at present.
The traditional photoelectric detection electromagnetic structure comprises a bow-tie structure, a log-periodic structure and the like, and the working bandwidth on a terahertz frequency band is small, so that the detection of photoelectric signals is unfavorable, and the working performance of a photoelectric device cannot be well reflected; meanwhile, the traditional photoelectric detection electromagnetic structure is not easy to be directly connected with the existing interface in connection. Therefore, a new improved design of the photoelectric detection electromagnetic structure is needed, including working frequency band and bandwidth, and the photoelectric detection technology requirement is met.
Disclosure of Invention
Aiming at the requirements of the technical field of photoelectric detection on terahertz frequency band signal detection and the defects of the prior art, the invention provides a broadband terahertz electromagnetic structure for photoelectric detection, which has the characteristics of high working frequency band, wide frequency band, compact structure and the like, considers the direct current bias requirement of a photoelectric detector, and can meet the technical requirements of photoelectric detection.
In order to achieve the purpose, the invention provides the following technical scheme:
the invention discloses a broadband terahertz electromagnetic structure for photoelectric detection, which comprises a substrate structure, wherein an electromagnetic energy radiation structure and a detector direct current power supply structure are arranged on the upper surface of the substrate structure, the electromagnetic energy radiation structure adopts a coplanar waveguide form, the electromagnetic energy radiation structure comprises a coplanar waveguide and a main radiation structure, the coplanar waveguide comprises a middle rectangle and two side rectangles, the main radiation structure is a circular connection structure, the main radiation structure comprises a first circle connected with the middle rectangle, the first circle is connected with a second circle and a fourth circle, the tail ends of the second circle are connected with a third circle, the inner part of the first circle is hollowed by a fifth circle, and the third circle and one of the side rectangles are respectively connected with the positive and negative ends of the detector direct current power supply structure.
Preferably, the side rectangles are symmetrically arranged at two sides of the middle rectangle at intervals, the middle rectangle transmits electromagnetic signals, and the side rectangle is a signal ground.
Preferably, the direct-current power supply structure of the detector adopts a structure that a first elongated rectangle is connected with the head end of a first square and a second elongated rectangle is connected with the head end of a second square, the first square and the second square are both used for connecting an external power supply probe, one end of the first elongated rectangle is connected with a third circle, and the other end of the first elongated rectangle is connected with one side of one of the side rectangles far away from the middle rectangle, one end of the first elongated rectangle is used as one of the positive and negative ends of the direct-current power supply structure of the detector, and the other end of the second elongated rectangle is used as the other of the positive and negative ends of the direct-current power supply structure of the detector.
Preferably, the first circle, the second circle and the fourth circle are circumscribed respectively, the second circle and the third circle are circumscribed, the centers of the first circle, the second circle and the third circle are located on the same straight line, and the centers of the first circle and the fifth circle are all located on the middle rectangular symmetry axis.
Preferably, the substrate structure is made of an aluminum nitride material, and the electromagnetic energy radiation structure and the detector direct current power supply structure are made of gold as a signal transmission metal material.
Preferably, the long side of the substrate structure is flush with the coplanar waveguide side of the electromagnetic energy radiating structure.
Preferably, the electromagnetic energy radiation structure works in a terahertz frequency range of 0.1 THz-0.75 THz.
Preferably, the coplanar waveguide impedance of the electromagnetic energy radiating structure is controlled to be 50 Ω.
Preferably, the first circle, the second circle, the third circle, the fourth circle and the fifth circle have the following dimensions: r1=245um, r2=125um, r3=80um, r4=60um, r5=150um, the included angle e1= pi/7 between the straight line of the centers of the circle one, the circle two and the circle three and the symmetry axis of the middle rectangle, and the included angle e2= pi/7 between the straight line of the centers of the circle one and the circle four and the symmetry axis of the middle rectangle.
The invention has the beneficial effects that: the invention relates to a broadband terahertz electromagnetic structure for photoelectric detection, which firstly designs and optimizes a broadband electromagnetic energy radiation structure working in a terahertz frequency band, secondly designs and optimizes a direct-current power supply structure of a photoelectric detector, and integrally fuses the direct-current power supply structure and the electromagnetic energy radiation structure to be arranged on a dielectric substrate. By continuously optimizing the structural parameters, the broadband electromagnetic structure working in the terahertz frequency band is finally obtained. The substrate structure of the broadband terahertz electromagnetic structure for photoelectric detection has the characteristics of wide frequency band, low profile, compact structure, good electromagnetic radiation gain and the like, and has remarkable performance improvement compared with the traditional terahertz electromagnetic structure such as a bow-tie structure, a log-periodic structure and the like.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of the present invention;
FIG. 2 is a dimensional schematic of an electromagnetic energy radiating structure of an embodiment of the present invention;
FIG. 3 is a schematic illustration of dimensions of a media substrate structure according to an embodiment of the present invention;
FIG. 4 is a simulation result of operating bandwidth for an embodiment of the present invention;
FIG. 5 shows simulation results of E-plane directional diagrams of electromagnetic radiation performance of embodiments of the present invention;
FIG. 6 shows simulation results of H-plane directional diagrams of electromagnetic radiation performance of embodiments of the present invention;
FIG. 7 is an exemplary application scenario of an embodiment of the present invention;
in the figure: an A-substrate structure, a B-electromagnetic energy radiation structure, a C-detector direct current power supply structure, a 10-coplanar waveguide, an 11-middle rectangle, a 12-side rectangle, a 20-main radiation structure, a 21-circle I, a 22-circle II, a 23-circle III, a 24-circle IV, a 25-circle V and a 31-elongated rectangle I, the device comprises a 32-square I, a 33-elongated rectangle II, a 34-square II, a D-indium phosphide substrate, an E-photoelectric detector, an F-photoelectric signal output structure, a G-photoelectric detection broadband terahertz electromagnetic structure, an H-field intensity probe, an I-test cable, a J-receiver, a K-bias voltage positive electrode probe, an L-bias voltage negative electrode probe and an M-aluminum nitride substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the scope of the invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
The invention relates to a broadband terahertz electromagnetic structure for photoelectric detection, which comprises a substrate structure A, an electromagnetic energy radiation structure B, a detector direct current power supply structure C and the like. The electromagnetic energy radiation structure B is in a coplanar waveguide form and comprises two parts, namely a coplanar waveguide 10 and a main radiation structure 20, the main radiation structure 20 is a circular connecting structure, a detector direct current power supply structure C is fused, the influence of the direct current power supply structure on the electromagnetic radiation performance is considered, and all metal structures are arranged on the substrate structure A. The broadband terahertz electromagnetic structure for photoelectric detection has the characteristics of high working frequency band, wide frequency band, compact structure and the like, and can meet the technical requirements of photoelectric detection by considering the direct current bias requirement of a photoelectric detector.
Referring to fig. 1 and fig. 2, a schematic diagram and a size schematic diagram of the broadband terahertz electromagnetic structure for photodetection are shown.
The electromagnetic energy radiation structure B comprises a coplanar waveguide 10 and a main radiation structure 20, and is a photoelectric signal converter which radiates weak electric signals obtained by a photoelectric detector in an electromagnetic wave form.
The coplanar waveguide 10 of the electromagnetic energy radiation structure B comprises a middle rectangle 11 and two side rectangles 12, wherein the two side rectangles are signal grounds of the coplanar waveguide, have the same size, have the width of w2 and the length of l2, and are symmetrically arranged at two sides of the middle rectangle 11 at intervals; the middle rectangle 11 transmits electromagnetic signals with a width w1 and a length l 1. The middle rectangle 11 is spaced from the side rectangles 12 by a distance g 1.
The coplanar waveguide 10 of the electromagnetic energy radiation structure B designs the required 50 omega characteristic impedance by adjusting the widths w1 and w2 of the middle rectangle 11 and the two side rectangles 12 of the coplanar waveguide 10 and the distance g1 between the middle rectangle 11 and the side rectangles 12. By continuously adjusting design parameters, the finally obtained coplanar waveguide has the following dimensions: w1 is 50um, w2 is 43.5um, l1 is 50um, l2 is 200um, g1 is 30 um.
The main radiating structure 20 of the electromagnetic energy radiating structure B, connected to the central rectangle 11 of the coplanar waveguide 10, is arranged on the base structure a. The main radiation structure adopts a form of connection of four circles, namely a circle I21, a circle II 22, a circle III 23 and a circle IV 24, and the corresponding radiuses are r1, r2, r3 and r 4. The circle 1 is connected with the middle rectangle 11 of the coplanar waveguide 10 of the electromagnetic energy radiation structure, the inside of the circle I21 is hollowed by the circle five 25, the radius of the circle five 25 is r5, the centers of the circle five 25 and the circle I21 are both on the central axis of the long side of the middle rectangle 11 of the coplanar waveguide 10, and the distance between the two centers of the circle is g 2. The second circle 22 is connected with the first circle 21, the third circle 23 is connected with the second circle 22, the centers of the three circles are on the same straight line, and the included angle between the straight line and the axis of the long axis of the middle rectangle 11 of the electromagnetic energy radiation structure B is ɵ 1; the circle four 24 is connected with the circle one 21, the included angle between the connecting line of the centers of the circle four 24 and the circle one 21 and the axis of the long axis of the middle rectangle 11 of the electromagnetic energy radiation structure B is ɵ 2, and the electromagnetic radiation structure size meeting the requirement is obtained by continuously adjusting the parameters and optimizing the result.
Specifically, the radii r1, r2, r3 and r4 of the first circle 21, the second circle 22, the third circle 23 and the fourth circle 24 are adjusted, so that the main radiation structure 20 of the electromagnetic radiation structure B has a plurality of resonance points in the terahertz frequency band, and the working frequency bandwidth of the main radiation structure in the terahertz frequency band is increased; the performance of the main radiation structure in the working frequency band can be further optimized by adjusting the radius r5 of the fifth circle 25 and included angles ɵ 1 and ɵ 2 between the circle center connecting line and the long axis of the middle rectangle 11. By continuously adjusting design parameters, the finally obtained main radiation structure size is as follows: r1 is 245um, r2 is 125um, r3 is 80um, r4 is 60um, r5 is 150um, g2 is 70um, ɵ 1 is pi/7, ɵ 2 is pi/7.
The detector direct current power supply structure C of the broadband terahertz electromagnetic structure for photoelectric detection can provide bias voltage for the photoelectric detector when being connected with an external voltage probe, so that the photoelectric detector can normally work.
The detector direct-current power supply structure C comprises two ends of a positive electrode and a negative electrode, wherein the positive electrode is in a structural form that a long and thin rectangle I31 is connected with a square I32, the long and thin rectangle I31 is connected with a circle III 23, and the square I32 can be connected with an external power supply positive electrode probe; the width of the elongated rectangle of the positive electrode is w3, the length of the elongated rectangle of the positive electrode is l3, the width of the square of the positive electrode is w4, and the length of the square of the positive electrode is l 4. The negative electrode is in a structural form that the elongated rectangle II 33 is connected with the square II 34, the elongated rectangle II 33 is connected with one side of one side rectangle 12 far away from the middle rectangle (11), and the square II 34 can be connected with an external power supply negative electrode probe; the negative elongated rectangle has a width w5 and a length l5, and the negative square has a width w6 and a length l 6.
Further, the detector dc supply structure C may affect the performance of the electromagnetic energy radiation structure, so that the size parameter of the direct supply structure needs to be optimized, and the detector dc supply structure meeting the performance index requirement is designed. The size of the finally obtained direct current power supply structure C of the detector is as follows: w3 is 10um, w4 is 50um, w5 is 10um, w6 is 50um, l3 is 423um, l4 is 50um, l5 is 220um, l6 is 50 um.
Referring to fig. 3, the electromagnetic energy radiation structure B of the broadband terahertz electromagnetic structure for photoelectric detection and the detector direct-current power supply structure C both use gold as a metal material, and the thickness of different gold affects the radiation performance of the electromagnetic energy radiation structure, including coplanar waveguide impedance, working bandwidth, and the like. By continuously adjusting the optimized gold thickness in combination with the actual process manufacturing level, the final gold thickness h2 is 8 um.
The substrate structure A is made of aluminum nitride materials and plays a role in supporting and connecting, and the electromagnetic energy radiation structure B and the detector direct-current power supply structure C are both arranged on the upper surface of the substrate structure A.
The broadband terahertz electromagnetic structure for photoelectric detection is small in overall size, compact in structure and low in section, and the design of the broadband terahertz electromagnetic structure for photoelectric detection is finally completed by optimizing parameters of the substrate structure through simulation. The specific structure size is as follows: w7 is 1048um, l7 is 1625um, h1 is 254 um.
Referring to fig. 4, the broadband terahertz electromagnetic structure for photoelectric detection is designed based on the structural parameters to obtain the electromagnetic transmission performance of the broadband terahertz electromagnetic structure for photoelectric detection, the working bandwidth (S parameter less than-10 dB) of the broadband terahertz electromagnetic structure is a terahertz frequency band, the start-stop frequency is 0.1THz to 0.75THz, and the broadband terahertz electromagnetic structure has broadband working characteristics. In the working frequency band, the S parameter is at least-31.5 dB.
Referring to fig. 5, the broadband terahertz electromagnetic structure for photodetection has an electromagnetic radiation E-plane (E-plane)
Figure DEST_PATH_IMAGE002
=90°,-180°<
Figure DEST_PATH_IMAGE004
<The 180 DEG directional diagram shows that the structure has good radiation performance, and the maximum gain of the broadband terahertz electromagnetic structure for photoelectric detection is 6dB within the radiation range of the E surface. The gain is stabilized to be more than 2dB within the range of-150 degrees to-30 degrees, the gain is stabilized to be more than 2.5dB within the range of 30 degrees to 160 degrees, and the broadband terahertz electromagnetic structure for photoelectric detection within a wide angle range has good radiation performance.
Referring to fig. 6, the broadband terahertz electromagnetic structure for photodetection has an electromagnetic radiation H plane (
Figure 526074DEST_PATH_IMAGE004
=90°,-180°<
Figure 708793DEST_PATH_IMAGE002
<In a radiation range of 180 degrees, the maximum gain of the broadband terahertz electromagnetic structure for photoelectric detection is 7.1dB, and the structure has high electromagnetic radiation gain performance.
Referring to fig. 7, the broadband terahertz electromagnetic structure based on photoelectric detection of the present invention can be specifically applied to performance testing of a photoelectric detector, where a typical application scenario is as follows: the adopted photoelectric detector E grows on the indium phosphide substrate D, and the photoelectric signal output structure F continues to grow on the indium phosphide to realize the connection between the photoelectric detector and other devices. The tail end of the photoelectric signal output structure F is connected with the coplanar waveguide 10 part of the broadband terahertz electromagnetic structure G for photoelectric detection. The photoelectric signal output structure F on the indium phosphide D is connected with the coplanar waveguide 10 of the broadband terahertz electromagnetic structure G for photoelectric detection, and the photoelectric detector is respectively subjected to direct-current bias arrangement through a bias voltage positive probe K and a bias voltage negative probe L, so that the photoelectric detector E works in a corresponding working area. The photoelectric detector E converts the optical signal into an electric signal, and then the electric signal is converted into an electromagnetic wave and radiated out through the main radiation structure of the broadband terahertz electromagnetic structure G for photoelectric detection. In order to measure the frequency band and the intensity of an electromagnetic radiation signal, a broadband external field intensity probe H is arranged near a main radiation structure of a broadband terahertz electromagnetic structure G for photoelectric detection, and the external field intensity probe H is connected with a radio frequency port of a receiver J through a test cable I to measure the electromagnetic wave signal. The energy intensity of the electromagnetic signal radiated from the photoelectric detection broadband terahertz electromagnetic structure and the corresponding frequency band can be read from the receiver J. By comparing the intensity difference of the energy received by different frequency bands, the working bandwidth of the photoelectric detector can be analyzed and judged, so that the performances of the photoelectric detector such as photoelectric signal conversion efficiency and the like can be obtained.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents or improvements made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (8)

1. A broadband terahertz electromagnetic structure for photoelectric detection is characterized in that: the detector comprises a substrate structure (A), an electromagnetic energy radiation structure (B) and a detector direct current power supply structure (C) are arranged on the upper surface of the substrate structure (A), the electromagnetic energy radiation structure (B) adopts a coplanar waveguide form, the electromagnetic energy radiation structure (B) comprises a coplanar waveguide (10) and a main radiation structure (20), the coplanar waveguide (10) comprises a middle rectangle (11) and two side rectangles (12), the main radiation structure (20) is a circular connection structure, the main radiation structure (20) comprises a first circle (21) connected with the middle rectangle (11), a second circle (22) and a fourth circle (24) are connected onto the first circle (21), a third circle (23) is connected to the tail end of the second circle (22), the inside of the first circle (21) is hollowed by a fifth circle (25), and the first circle (21) is respectively circumscribed with the second circle (22) and the fourth circle (24), the second circle (22) is circumscribed with the third circle (23), the centers of the first circle (21), the second circle (22) and the third circle (23) are in the same straight line, the centers of the first circle (21) and the fifth circle (25) are both on the symmetry axis of the middle rectangle (11), the circle III (23) and the side rectangle (12) are respectively connected with the positive and negative ends of the detector direct current power supply structure (C), the direct current power supply structure (C) of the detector adopts a slender rectangle I (31) to be connected with the head end of a square I (32), and a structure that the slender rectangle II (33) is connected with the head end of the square II (34), the square I (32) and the square II (34) are both used for connecting an external power supply probe, the tail end of the first elongated rectangle (31) is connected with the third circle (23), and the tail end of the second elongated rectangle (33) is connected with one side of one side rectangle (12) far away from the middle rectangle (11).
2. The broadband terahertz electromagnetic structure for photodetection according to claim 1, wherein: the side rectangle (12) are symmetrically arranged on two sides of the middle rectangle (11) at intervals, the middle rectangle (11) transmits electromagnetic signals, and the side rectangle (12) is a signal ground.
3. The broadband terahertz electromagnetic structure for photodetection according to claim 1, wherein: the tail end of the first elongated rectangle (31) is used as one of the positive and negative ends of the direct current power supply structure (C) of the detector, and the tail end of the second elongated rectangle (33) is used as the other of the positive and negative ends of the direct current power supply structure (C) of the detector.
4. The broadband terahertz electromagnetic structure for photodetection according to claim 1, wherein: the substrate structure (A) adopts an aluminum nitride material, and the electromagnetic energy radiation structure (B) and the detector direct current power supply structure (C) adopt gold as a signal transmission metal material.
5. The broadband terahertz electromagnetic structure for photodetection according to claim 1, wherein: the long side of the substrate structure (A) is flush with one side of the coplanar waveguide (10) of the electromagnetic energy radiation structure (B).
6. The broadband terahertz electromagnetic structure for photodetection according to claim 1, wherein: the electromagnetic energy radiation structure (B) works in a terahertz frequency band within a working range of 0.1 THz-0.75 THz.
7. The broadband terahertz electromagnetic structure for photodetection according to claim 1, wherein: the coplanar waveguide impedance of the electromagnetic energy radiating structure (B) is controlled at 50 omega.
8. The broadband terahertz electromagnetic structure for photodetection according to claim 1, wherein: the size radiuses of the first circle (21), the second circle (22), the third circle (23), the fourth circle (24) and the fifth circle (25) are respectively as follows: r1=245um, r2=125um, r3=80um, r4=60um, r5=150um, an included angle e1= pi/7 between a straight line of centers of the first circle (21), the second circle (22) and the third circle (23) and a connecting line of centers of the first circle (21) and the fifth circle (25), and an included angle e2= pi/7 between a straight line of centers of the first circle (21) and the fourth circle (24) and a connecting line of centers of the first circle (21) and the fifth circle (25).
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