CN100544141C - The high speed photoelectronic device encapsulation structure of applying microwave photonic crystal co-planar waveguide - Google Patents
The high speed photoelectronic device encapsulation structure of applying microwave photonic crystal co-planar waveguide Download PDFInfo
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- CN100544141C CN100544141C CN 200510055278 CN200510055278A CN100544141C CN 100544141 C CN100544141 C CN 100544141C CN 200510055278 CN200510055278 CN 200510055278 CN 200510055278 A CN200510055278 A CN 200510055278A CN 100544141 C CN100544141 C CN 100544141C
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Abstract
The present invention relates to the opto-electronic device manufacturing process technology field, is the use of co-planar waveguide in the high speed photoelectronic device with microwave photon structure.Use a kind of heat sink coplane microwave microstrip circuit, detection circuit backlight and temperature detection circuit made in the above, and at heat sink back side plating conductor ground level.Use the co-planar waveguide of back side ground connection on heat sink, the Terminal Design of co-planar waveguide center conductor is circular, and the ground level that the center conductor both sides are arranged extends and surrounds the circular central conductor in terminal, has formed the coplane ground level of an integral body.Co-planar waveguide of the present invention has that thermal conductivity is good, mechanical strength is high and the characteristics of low cost of manufacture.
Description
Technical field
The present invention relates to the opto-electronic device manufacturing process technology field, the high speed photoelectronic device encapsulation structure of a kind of applying microwave photonic crystal co-planar waveguide of more specifically saying so.
Background technology
Growing along with photoelectric device and integrated technology used the photoelectric device of high-performance, low cost, little overall dimension and low-power consumption more and more in optical transmission system.An opto-electronic device is used in the middle of will putting into system, and the structural design of its coupling encapsulation has decisive influence for many-sided performances such as high frequency characteristics, reliability and useful life of this device.
Through assembling and the photoelectric device chip of electrical interconnection and relevant function element and circuit etc., to enclose in the special shell, and be connected by shell interior optical system and outside realization light, this technology is called the photoelectric device packaging technology.The back road encapsulation of opto-electronic device is very important operation, and it not only is related to the stability and the reliability of device, and different shell structures and packing forms also can influence the performance parameter of device.
Along with the development of technology, encapsulating structure is just trending towards miniaturization and multifunctional modular.The butterfly encapsulation is equipped with semiconductor cooler and thermistor usually, and can places some microwave microstrip circuits because the inner space is bigger.By semiconductor cooler and thermistor,, can guarantee that semiconductor chip (as laser, detector, modulator etc.) is operated in a constant working temperature in conjunction with external control circuit.And microwave microstrip circuit plays clearly effect for reducing encapsulation to the influence of semiconductor photoelectric device high frequency response characteristic.When carrying out the design of high speed photoelectronic device architecture, microstrip line is the high-speed signal transmission lines of using always.Yet the loss of microstrip line is a key factor that influences the final high frequency performance of device.Excessive loss meeting descends the amplitude of high-frequency signal, finally influences the high frequency response characteristic of device.Simultaneously, loss deforms to the signal that the dependence of frequency can cause transmitting in little band.
The possible reason of loss that causes microstrip line under upper frequency has aspect two, and the one, this degradation when frequency is higher of conductor material and dielectric, loss angle tangent increases with the rising of frequency; The 2nd, radiation loss and surface wave transmission.When frequency surpassed 10GHz, it is very remarkable that these two kinds of losses become, for Al
2O
3, material that this relative permittivity such as AlN is bigger is particularly like this.In addition, radiation and surface wave can cause that the parasitic couplings between microstrip line and other circuit makes electromagnetic compatibility (EMC) decreased performance.Usually, there are two kinds of methods can suppress electromagnetic radiation.1) can select high dielectric constant materials for use, electromagnetic field is bound by in the medium.But the dielectric loss that this design causes is also very big.2) in the microstrip line both sides ground level is set, then can reduces irradiation of electromagnetic waves greatly, this structure is exactly co-planar waveguide (CPW), and the medium substrate of common this waveguide covers the co-planar waveguide (CB-CPW) that conductor forms back side ground connection.With respect to traditional CPW, back side ground connection has low characteristic impedance and heat sink characteristic and can improve the mechanical strength of substrate.Yet this microstrip line can produce the parallel-plate tunnelling ray between the ground level of top and bottom, and it all exists in whole frequency range.This structure can be at transmission parameter S
21Characteristic frequency point form resonance absorbing peak.With the increase of frequency, this phenomenon can be more and more serious, also strengthened the generation of surface wave simultaneously.In the middle of it makes and partly leaks into ground along the energy of little band center conductor transmission.
Because the frequency of present optoelectronic device applications is more and more higher, for example, the highest 20GHz that surpassed of the bandwidth of semiconductor laser, the bandwidth of photodetector and semiconductor modulator has surpassed 40GHz etc.For the overall performance that improves opto-electronic device with reduce cost, the high speed photoelectronic device package of today presses for traditional method for designing and new manufacturing process and the technology of being different from.
Summary of the invention
For the co-planar waveguide that solves back side ground connection because the problem of the energy leakage that the existence of parallel template die produces, the object of the invention is to provide a kind of new transmission line structure, it is the co-planar waveguide of back side ground connection, be etched on the ground plate of top having compact periodicity photon crystal structure, utilize photonic crystal in certain frequency range, to have the generation that the stopband effect can suppress parallel template die effectively, stoped the leakage of energy, thereby reduced the loss of signal on certain frequency range rate scope to ground level.The electromagnetic property of this periodic structure can be expressed with the circuit unit (electric capacity or inductance) of lump, the coupling effect of inductance and electric capacity by periodic arrangement, can produce a stopband, its centre frequency is by the cycle decision of photonic crystal, the width of stopband and the degree of depth are by the physical dimension decision of periodic unit, and the band edge at cut-off frequency place is very precipitous.When the width of stopband design big, the behavior of this two-dimension periodic photonic crystal has the function of low pass filter.When high-frequency signal was with transmission from coplane is little, because the stopband effect of photonic crystal, the parallel template die between ground level was suppressed, thereby the energy of transmission can not leak on the ground level by parallel template die.
The technical solution adopted for the present invention to solve the technical problems is: in high speed photoelectronic device package (the butterfly encapsulation that exemplifies as the present invention), use the co-planar waveguide transmitting high-frequency signal of back side ground connection.This waveguide is characterised in that: 1) co-planar waveguide of back side ground connection be produced on monoblock heat sink on; 2) co-planar waveguide and heat sink dielectric substance are AlN, lay the conductor ground level at the heat sink back side; 3) on dielectric, the Terminal Design of waveguide center conductor is circular, and the ground level that the center conductor both sides are arranged extends and encirclement circular central conductor in terminal, has formed the coplane ground level of an integral body; 4) be etched with periodically microwave photon cellular construction on the ground level of waveguide top.
The present invention proposes a kind of high speed photoelectronic device encapsulation structure of applying microwave photonic crystal co-planar waveguide, this encapsulating structure comprises:
Heat sink; Be produced on the coplane microwave microstrip circuit in this heat sink front; And plating is at the conductor ground level at this heat sink back side, thereby forms the co-planar waveguide of back side ground connection;
Also comprise the detection circuit backlight and the temperature detection circuit that are produced on this heat sink front;
The Terminal Design of the center conductor of described coplane microwave microstrip circuit is circular, and the ground level of arranging in the center conductor both sides extends and encirclement circular central conductor in terminal, has formed the coplane ground level of an integral body; By etching periodicity microwave photon construction unit on the ground level of arranging in the center conductor both sides, form two-dimensional and periodic metallic microwave photonic crystal ground level;
This encapsulating structure also comprises the semiconductor chip, and the positive pole of described semiconductor chip contacts with the circular central conductor by a rectangular conductor piece, and the negative pole of semiconductor chip is welded on the ground level of center conductor both sides by spun gold.
The invention has the beneficial effects as follows: 1) use the co-planar waveguide of back side ground connection can reduce the outside electromagnetic radiation of high-frequency signal effectively; 2) semiconductor chip is placed on by a rectangular conductor piece on the circular central conductor of co-planar waveguide, and another utmost point of chip is connected with the coplane ground level by spun gold.This design can reduce the usage quantity of spun gold, thereby has weakened the influence of spun gold inductance to the device frequency response.3) because the chip on center conductor and its has been surrounded on etching ground level of microwave photon, this design can be suppressed at the parallel-plate tunnelling ray that produces on the coplanar transmission of back side ground connection.Simultaneously, can reduce the integrality of loss and assurance signal by inhibition to tunnelling ray.4) this co-planar waveguide has that thermal conductivity is good, mechanical strength is high and the characteristics of low cost of manufacture, reaches 50 Ω characteristic impedances easily by rational size design.
Description of drawings
For further specifying technology contents of the present invention, the invention will be further described below in conjunction with drawings and Examples, wherein:
Fig. 1 is the detail view of wherein a kind of two-dimensional photon crystal structure unit
Fig. 2 is a kind of co-planar waveguide top view of ground level etching two-dimension periodic photon crystal structure.
Fig. 3 is a front view heat sink in the butterfly packaging device and along the cross sectional view of A-A direction.
Fig. 4 is the high speed photoelectronic device inside structure chart of butterfly encapsulation.
Embodiment
Back side ground connection co-planar waveguide with photon crystal structure, the co-planar waveguide of the back side ground connection that its production process is complete and traditional is identical.See also accompanying drawing.
In the embodiment of Fig. 1, Fig. 2, Fig. 3, Fig. 4, selecting heat sink 11 material is AlN.Use the electroless plating technology, plate temperature detection circuit 1 and the detection circuit backlight 3 that material is Cu at heat sink end face, and the center conductor 9 of coplane microwave microstrip circuit 4 and ground level 8; Electroplate out monoblock conductor ground level 5 at the heat sink back side.Then, the electromagnetic field mode that ends is as required selected photonic crystal elements, with regard to the wherein a kind of planform as Fig. 1 gave.By exposure imaging and etching technics, on the ground level of the top of co-planar waveguide, etch periodically photon crystal structure 8.Have heat sink 11 of coplanar transmission structure 4 and be applied in the middle of the opto-electronic device of butterfly encapsulation this, all microstrip circuits all pass through spun gold 14 and link to each other with the pin one 3 of butterfly shell 16.Semiconductor chip 2 is placed on the center conductor of co-planar waveguide circle by a rectangular conductor piece, and connects by spun gold 14 and ground level 8.Simultaneously, on coplane microstrip circuit 4, establish build-out resistor 7 and input impedance matching, and DC channel placement inductance 12 plays every handing over.Whole heat sink being placed on the semiconductor cooler 15 to keep device inside constant temperature.
Claims (1)
1, a kind of high speed photoelectronic device encapsulation structure of applying microwave photonic crystal co-planar waveguide, this encapsulating structure comprises:
Heat sink; Be produced on the coplane microwave microstrip circuit in this heat sink front; And plating is at the conductor ground level at this heat sink back side, thereby forms the co-planar waveguide of back side ground connection;
Also comprise the detection circuit backlight and the temperature detection circuit that are produced on this heat sink front;
It is characterized in that,
The Terminal Design of the center conductor of described coplane microwave microstrip circuit is circular, and the ground level of arranging in the center conductor both sides extends and encirclement circular central conductor in terminal, has formed the coplane ground level of an integral body; By etching periodicity microwave photon construction unit on the ground level of arranging in the center conductor both sides, form two-dimensional and periodic metallic microwave photonic crystal ground level;
This encapsulating structure also comprises the semiconductor chip, and the positive pole of described semiconductor chip contacts with the circular central conductor by a rectangular conductor piece, and the negative pole of semiconductor chip is welded on the ground level of center conductor both sides by spun gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200510055278 CN100544141C (en) | 2005-03-17 | 2005-03-17 | The high speed photoelectronic device encapsulation structure of applying microwave photonic crystal co-planar waveguide |
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|---|---|---|---|
| CN 200510055278 CN100544141C (en) | 2005-03-17 | 2005-03-17 | The high speed photoelectronic device encapsulation structure of applying microwave photonic crystal co-planar waveguide |
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| CN1835308A CN1835308A (en) | 2006-09-20 |
| CN100544141C true CN100544141C (en) | 2009-09-23 |
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| CN 200510055278 Expired - Fee Related CN100544141C (en) | 2005-03-17 | 2005-03-17 | The high speed photoelectronic device encapsulation structure of applying microwave photonic crystal co-planar waveguide |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101527379B (en) * | 2009-03-30 | 2012-07-25 | 清华大学 | Microwave feeder unit used for sealing semiconductor electric absorption modulator |
| CN102324964A (en) * | 2011-05-18 | 2012-01-18 | 武汉电信器件有限公司 | Light transmitter with double-open-circuit short-knot matching network |
| CN105977241B (en) * | 2016-05-25 | 2018-10-09 | 中国科学院半导体研究所 | A kind of encapsulating structure for optical-elec-tronic integrated chip |
| CN109728391B (en) * | 2018-12-29 | 2024-05-07 | 中国科学院半导体研究所 | Defect ground structure coplanar waveguide-based laser |
| CN111509542A (en) * | 2020-05-27 | 2020-08-07 | 大连优迅科技有限公司 | 18Ghz laser |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5689216A (en) * | 1996-04-01 | 1997-11-18 | Hughes Electronics | Direct three-wire to stripline connection |
| WO2003088367A2 (en) * | 2002-04-10 | 2003-10-23 | Intense Photonics Limited | Integrated active photonic device and photodetector |
| US20030232603A1 (en) * | 2002-06-12 | 2003-12-18 | Makoto Tanaka | Package device for accommodating a radio frequency circuit |
| CN1479125A (en) * | 2002-08-26 | 2004-03-03 | 中国科学院半导体研究所 | Semiconductor laser butterfly packaging device |
-
2005
- 2005-03-17 CN CN 200510055278 patent/CN100544141C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5689216A (en) * | 1996-04-01 | 1997-11-18 | Hughes Electronics | Direct three-wire to stripline connection |
| WO2003088367A2 (en) * | 2002-04-10 | 2003-10-23 | Intense Photonics Limited | Integrated active photonic device and photodetector |
| US20030232603A1 (en) * | 2002-06-12 | 2003-12-18 | Makoto Tanaka | Package device for accommodating a radio frequency circuit |
| CN1479125A (en) * | 2002-08-26 | 2004-03-03 | 中国科学院半导体研究所 | Semiconductor laser butterfly packaging device |
Non-Patent Citations (1)
| Title |
|---|
| Novel 2-D Photonic Bandgap Structure for Microstrip Lines. Vesna Radisic et.al.IEEE MICROWAVE AND GUIDED WAVE LETTERS,Vol.8 No.2. 1998 * |
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| CN1835308A (en) | 2006-09-20 |
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