CN104201454A - LTCC (Low Temperature Co-Fired Ceramic) miniaturization microwave passive device - Google Patents
LTCC (Low Temperature Co-Fired Ceramic) miniaturization microwave passive device Download PDFInfo
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- CN104201454A CN104201454A CN201410376606.5A CN201410376606A CN104201454A CN 104201454 A CN104201454 A CN 104201454A CN 201410376606 A CN201410376606 A CN 201410376606A CN 104201454 A CN104201454 A CN 104201454A
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Abstract
The invention discloses an LTCC (Low Temperature Co-Fired Ceramic) miniaturization microwave passive device. The LTCC miniaturization microwave passive device comprises dielectric layers and metal layers which are arranged between the dielectric layers; the dielectric layers comprise a first micro-strip dielectric layer, a second micro-strip dielectric layer, a third micro-strip dielectric layer, a first strip line dielectric layer, a second strip line dielectric layer, a third strip line dielectric layer, a fourth strip line dielectric layer, a fifth strip line dielectric layer and a sixth strip line dielectric layer which are arranged from top to bottom in turn; the metal layers comprise a micro-strip line, a first grounding plane, a strip line and a second grounding plane; the micro-strip line is arranged on the first micro-strip dielectric layer; the first grounding plane is arranged between the third micro-strip dielectric layer and the first strip line dielectric layer; the strip line is arranged between the third strip line dielectric layer and the fourth strip line dielectric layer; the second grounding plane is arranged below the sixth strip line dielectric layer. According to the LTCC miniaturization microwave passive device, the multilayer wiring scheme is adopted and accordingly the circuit size and weight is reduced under the same working frequency, the problem of transmission line overlapping is effectively solved, parasitic parameters are reduced, the structure is simple, and the performance is good.
Description
Technical field
The invention belongs to Controller Circuit Used in Microwave Power Amplifier technical field, relate in particular to a kind of miniaturization microwave passive component based on LTCC (Low Temperature Co-fired Ceramic, LTCC).
Background technology
LTCC (Low Temperature Co-fired Ceramic, LTCC) technology is the integrated assembly technology attracting people's attention that nineteen eighty-two starts to grow up, become the mainstream technology of passive integration, become the developing direction in passive component field and the point of economic increase of new element industry.This technology can successfully produce various high-tech LTCC products.Multiple passive components dissimilar, different performance are integrated in an encapsulation several different methods, mainly contains LTCC (LTCC) technology, thin film technique, silicon chip semiconductor technology, multilayer circuit plate technique etc.LTCC technology is the mainstream technology of passive integration.Compared with other integrated technology, LTCC has many merits: the first, and ceramic material has the characteristic of good high frequency, high-speed transfer and broad passband; The second, can adapt to large electric current and high-temperature stability requirement, and possess than the better heat conductivity of common PCB circuit substrate, greatly optimize the heat dissipation design of electronic equipment, reliability is high, can be applicable to adverse circumstances, has extended its useful life; The 3rd, can make the circuit substrate that the number of plies is very high, and multiple passive components can be imbedded wherein, exempt the cost of package assembling, on the very high three-dimensional circuit substrate of the number of plies, realized passive and active integrated, be conducive to improve the packaging density of circuit, further reduce volume and weight; The 4th, there is good compatibility with other polylaminate wiring techniques, for example LTCC is combined with film wiring technique and can realizes more high assembled density and better hybrid multilayer substrate and the mixed multi-chip module of performance; The 5th, the production technology of discontinuous formula, is convenient to finished product and makes and front the wiring of every one deck and through-hole interconnection are carried out to quality examination, is conducive to improve rate of finished products and the quality of multilager base plate, the shortening production cycle, reduces costs; The 6th, energy-conservation, material-saving, green, environmental protection have become the inundant trend of element industry development, and LTCC has also catered to this growth requirement just, has reduced to the full extent raw material, the environmental pollution bringing in waste material and production process.Its application advantage is: (1) is easy to realize more wiring numbers of plies, improves packaging density; (2) be easy to embedded set components and parts, improve packaging density, realize multi-functional; (3) be convenient to substrate and burn till and front the wiring of every one deck and through-hole interconnection are carried out to quality examination, be conducive to improve rate of finished products and the quality of multilager base plate, the shortening production cycle, reduce costs; (4) there is good high frequency characteristics and high-speed transfer characteristic; (5) be easy to form the cavity of various structures, thus the multifunction microwave MCM that realizability can be good; (6) have good compatibility with thin film multilayer wiring technology, the two is in conjunction with realizing more high assembled density and better hybrid multilayer substrate and the mixed multi-chip module (MCM-C/D) of performance; (7) be easy to realize multilayer wiring and encapsulation integral structure, further reduce volume and weight, improve reliability.The particular advantages that LTCC technology has due to self, for making the surface-assembled type components and parts of next-generation mobile communications, will show huge superiority.The physical restriction of the integration of radio-frequency module and power consumption and its structure is closely bound up, the miniaturization of radio-frequency module becomes the essential condition of whole wireless terminal device miniaturization undoubtedly, in order to lengthen working hours and to promote portability, smaller szie and more low-power consumption also become the unremitting pursue of development equipment in addition.Microwave passive component is the important component part of modern radio-frequency module, and from the development process of radio-frequency technique, passive device is own through becoming the principal element of limitation of radio frequency module cost and volume.Microwave passive component comprises coupler, power splitter, filter, duplexer, antenna, Ba Lun etc.Conventional miniaturization technology mainly contains lumped-parameter element loading at present, and minor matters load, and composite right/left-handed transmission line etc.The method that lumped parameter original paper loads can be introduced more parasitic parameter, and is limited to the self-resonant frequency of element, particularly larger on circuit performance impact in the higher situation of frequency; Composite left-and-right-hand transmission line structure is comparatively complicated, requires machining accuracy high, is relatively difficult to realize; Defect ground structure is the graphical configuration by carve candle defect on ground plate, and on ground plate, the figure of etching defect can be upset the distribution of conduction current on ground plate, thereby passive device performance is caused to adverse effect.And load open stub in two ends or the centre of transmission line, can change the equivalent transmission of transmission line, thereby shortening length of transmission line, circuit structure is simple, cost is lower, and functional, but in planar structure, the overlapped problem of transmission line is difficult to solve, and its application and performance are very limited.LTCC Technology (LTCC) is because its low cost, low dielectric loss, multilayer layout, the good characteristic such as conductive and heat-conductive rate and high-frequency and high-Q are widely used in the microwave and millimeter wave Circuits and Systems of various miniaturizations, lightweight, high-performance and high integration.Transmission line loading open circuit minor matters and LTCC technology are combined, and the minor matters of opening a way layout, to main transmission line different layers, can effectively solve the overlapped problem of transmission line, further brings into play miniaturization advantage.
Summary of the invention
In order to address the above problem, the present invention proposes a kind of miniaturization microwave passive component based on LTCC (Low Temperature Co-fired Ceramic, LTCC).
Technical scheme of the present invention is: a kind of LTCC miniaturization microwave passive component, comprise the metal level between dielectric layer and dielectric layer, wherein, dielectric layer comprises first micro-band dielectric layer, second micro-band dielectric layer, the 3rd micro-band dielectric layer and the first shape line dielectric layer, the second shape line dielectric layer, the 3rd shape line dielectric layer, the 4th shape line dielectric layer, the 5th shape line dielectric layer, the 6th strip line dielectric layer that are arranged in order from top to bottom; Metal level comprises that first is micro-with the microstrip line on dielectric layer, the 3rd micro-with the strip line between the first ground plane, the third and fourth strip line dielectric layer between dielectric layer and the first strip line dielectric layer, the second ground plane under layer 6 strip line dielectric layer, and described microstrip line is provided with microwave passive component main body.
Further, between above-mentioned microstrip line and strip line, be provided with through-hole interconnection, described through-hole interconnection is from top to bottom successively through first micro-band dielectric layer, second micro-band dielectric layer, the 3rd micro-band dielectric layer, the first ground plane, the first shape line dielectric layer, the second shape line dielectric layer, the 3rd shape line dielectric layer.
Further, above-mentioned through-hole interconnection and strip line form open circuit minor matters jointly.
Further, above-mentioned microwave passive component main body is connected by through-hole interconnection with strip line.
The invention has the beneficial effects as follows: LTCC miniaturization microwave passive component of the present invention has adopted multilayer wiring scheme, has brought into play LTCC technical advantage, under same operating frequency, compared with traditional passive device, reduced circuit size and weight; Compared with the minor matters loading structure of planar circuit, through-hole interconnection is equivalent to one section of minor matters, and another section of minor matters are positioned over device different layers, efficiently solve the overlapping problem of transmission line.Passive device input/output structure of the present invention also can be designed to microstrip line or ground connection co-planar waveguide according to demand, is easy to other components and parts mutually integratedly, adopts signal via interconnection to reduce parasitic parameter, simple in structure and better performances between each dielectric layer.
Brief description of the drawings
Fig. 1 is the hierarchical structure schematic diagram of LTCC miniaturization passive device of the present invention.
Fig. 2 is the planar structure schematic diagram of LTCC miniaturization passive device microstrip line of the present invention.
Fig. 3 is through-hole interconnection structural representation in LTCC miniaturization passive device the first microstrip line dielectric layer of the present invention, the second microstrip line dielectric layer, the 3rd microstrip line dielectric layer.
Fig. 4 is the planar structure schematic diagram of LTCC miniaturization passive device of the present invention the first ground plane.
Fig. 5 is the planar structure schematic diagram of through-hole interconnection in LTCC miniaturization passive device the first strip line dielectric layer of the present invention, the second strip line dielectric layer, the 3rd strip line dielectric layer.
Fig. 6 is the planar structure schematic diagram of LTCC miniaturization passive device strip line of the present invention.
Fig. 7 is the planar structure schematic diagram of LTCC miniaturization passive device of the present invention the second ground plane.
Fig. 8 is LTCC miniaturization passive device S parameter amplitude characteristic of the present invention.
Fig. 9 is LTCC miniaturization passive device S parameter phase characteristic of the present invention.
Figure 10 is LTCC miniaturization passive device of the present invention and traditional devices size comparison diagram.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
LTCC miniaturization microwave passive component in the present embodiment is a kind of four port devices, oriented coupler of coupler wire.
As shown in Figure 1, LTCC miniaturization microwave passive component of the present invention, comprise the metal level between dielectric layer and dielectric layer, wherein, dielectric layer comprises the first microstrip line dielectric layer 1, the second microstrip line dielectric layer 2, the 3rd microstrip line dielectric layer 3 and the first strip line dielectric layer 4, the second strip line dielectric layer 5, the 3rd strip line dielectric layer 6, the 4th strip line dielectric layer 7, the 5th strip line dielectric layer 8, the 6th strip line dielectric layer 9 that are arranged in order from top to bottom; Metal level comprises the strip line 12 between the first ground plane 11, the 3rd strip line dielectric layer 6 and the 4th strip line dielectric layer 7 between microstrip line 10, the 3rd microstrip line dielectric layer 3 and the first strip line dielectric layer 4 on the first microstrip line dielectric layer 1, the second ground plane 13 under layer 6 strip line dielectric layer 9.Between microstrip line 10 and strip line 12, be provided with through-hole interconnection 14, through-hole interconnection 14 is from top to bottom successively through the first microstrip line dielectric layer 1, second micro-band dielectric layer 2, the 3rd micro-band dielectric layer 3, the first ground plane 13, the first shape line dielectric layer 4, the second shape line dielectric layer 5, the 3rd shape line dielectric layer 6.Different metal interlayer interconnects by signal interconnection through hole 14, and through-hole interconnection 14 need hollow out at metal on the ground through ground plane parts, through hole is passed through and not with metal be connected.
As shown in Figure 2, be the microstrip line planar structure in the present embodiment.Wherein, the same layer ground plane that 2-1 is CPWG, the center conductor that 2-2 is CPWG, 2-3 is the λ g/4 coupling line that two ends have loaded open circuit minor matters, and 2-4 is 50 Ω microstrip lines, and 2-5 is gradual change impedance line.Input/output structure is 50 Ω ground connection co-planar waveguides (CPWG), comprises with layer ground plane 2-1 and center conductor 2-2.
As shown in Figure 3, be the through-hole interconnection planar structure in the first microstrip line dielectric layer, the second microstrip line dielectric layer, the 3rd microstrip line dielectric layer in the present embodiment.Wherein, the 3-1 through-hole interconnection that to be ground connection co-planar waveguide be connected with the first ground plane with layer ground plane, 3-2 is the part of signal interconnection through hole in microstrip line medium that coupling line loads minor matters.
As shown in Figure 4, be the planar structure of microstrip line in the present embodiment and public the first ground plane of strip line.Wherein, 4-1 is upper for making signal interconnection through hole by the part hollowing out at metal, the metal part that 4-2 is ground plane on the ground.
As shown in Figure 5, be the planar structure of the through-hole interconnection in the first strip line dielectric layer, the second strip line dielectric layer, the 3rd strip line dielectric layer in the present embodiment.Wherein, 5-1 is the part of signal interconnection through hole in strip line medium that microstrip coupled line loads minor matters, and identical with 3-2 position, interconnects, and forms the first minor matters.
As shown in Figure 6, be the planar structure of strip line in the present embodiment.Wherein, 6-1 is a part for open circuit minor matters, forms the second minor matters, and the common formation of the first minor matters that the inter-level interconnects through hole representing with 3-2,5-1 forms is carried in the minor matters in parallel at λ g/4 coupling line two ends.
As shown in Figure 7, be the second ground plane planar structure under layer 6 strip line dielectric layer in the present embodiment.This ground plane is the large-area metal ground of monoblock.Shown in 4-2, the second ground plane shown in the first ground plane and 7-1 interconnects by substrate sidewall gold filled, ensures overall good earth.
Directional coupler is two transmission lines to be placed on to enough near position make the power on line can be coupled to the element on another line.As four ports all mate, in the ideal case, directional coupler is lossless reciprocity; Signal can be inputted by any one end, and the port being directly connected with it by transmission line, for straight-through end, couples a signal to coupled end by coupling line, and coupled end is positioned at input homonymy, and corresponding isolation end is positioned at straight-through end homonymy; When the length of coupling path is four of signal frequency corresponding wavelength/for the moment, it is maximum that coupling between signal input part and coupled end reaches, and straight-through end should be mutually orthogonal with coupled end signal, and power is only transmitted to a certain output port in coupling line, another port is isolation end, inactivity output.If direction of wave travel becomes and original opposite direction in direct-through line, in coupling line, the port of the output port of power and inactivity output also can change thereupon, that is to say, the coupling (distribution) of power is directive, is therefore called directional coupler (directional coupler).
Specifically, transmission line is loaded to open circuit minor matters, its essence is that changing the equivalent transmission of transmission line entirety loading after minor matters shortens the physical length of corresponding same electrical length, thereby reach the object of miniaturization, but therefore also can cause the impedance of transmission line self character to change.The input/output port of the present embodiment is the ground connection co-planar waveguide (CPWG) of 50 Ω, as shown in 2-1,2-2 in Fig. 2; Connect afterwards one section of 50 Ω microstrip line, as shown in 2-4,50 Ω microstrip lines are directly connected with 50 Ω ground connection co-planar waveguides, can ensure impedance matching, reduce return loss; In the time being connected with 50 Ω microstrip transmission lines, for improving its echoing characteristics, between two sections of transmission lines, increase by one section of impedance tapered line, as shown in 2-5; The same layer ground plane of ground connection co-planar waveguide approached to microstrip line one side and carry out chamfering, be unlikely to make ground plane and microstrip line to couple together to ensure technique to realize.Through-hole interconnection is equivalent to a part for open circuit minor matters, and its equivalent characteristic impedance can connect cut-out area on the first ground according to change and adjust, as shown in 4-1 in Fig. 4; Through-hole interconnection aperture also can be adjusted as required according to actual needs in addition, as shown in 3-1,3-2,5-1; Strip line part minor matters length and width are all adjustable, and as shown in 6-1 in Fig. 6, through hole can obtain the design effect of expection in conjunction with optimization with strip line minor matters two parts.
The medium that the present embodiment adopts is Ferror A6 green band, and dielectric constant is 5.9, and every layer of green tape thickness is 0.094mm, and surface metal material is gold, and buried metal and via material are silver, and every layer of metal thickness is 0.01mm.Its design center frequency 10GHz, the degree of coupling is-10dB.As shown in Figure 8, Figure 9, as can be seen from Figure, this miniaturization directional coupler degree of coupling is comparatively accurate for its S parameter characteristic, and at centre frequency place, error is less than 0.1dB; Return loss at center frequency point place is-23.7dB; Be better than-1dB of Insertion Loss; Straight-through end and coupled end are at the phase error <1 ° of centre frequency place, and error <3 ° in 8 to 11GHz, has realized good performance.As shown in figure 10, be the present embodiment and traditional directional coupler size comparison diagram, the described miniaturization directional coupler that wherein 10-1 is the present embodiment, 10-2 is traditional structure microstrip line directional coupler.The present embodiment λ g/4 Coupled Line Length of Band only has 1.86mm, width only has 0.17mm, traditional structure length is 3.6mm, width is 0.42mm, on core texture, the present embodiment Area Ratio traditional structure has dwindled 70%, after the test structure that adds transition and ground connection co-planar waveguide, size also only has 4*4.5*0.886mm3, has reached good effect.
The present invention also can be applicable to other microwave passive component, as branch line electric bridge, ring-shape bridge, Wilkinson power divider, Ba Lun etc.According to practical application needs, device main body also can adopt strip line, and micro-band or strip line are realized for the second minor matters of loading, and the second minor matters can be one or more parallel connection, and fan-out mouth can adopt micro-band or other circuit structure according to demand.
Those of ordinary skill in the art will appreciate that, embodiment described here is in order to help reader understanding's principle of the present invention, should be understood to that protection scope of the present invention is not limited to such special statement and embodiment.Those of ordinary skill in the art can make various other various concrete distortion and combinations that do not depart from essence of the present invention according to these technology enlightenments disclosed by the invention, and these distortion and combination are still in protection scope of the present invention.
Claims (4)
1. a LTCC miniaturization microwave passive component, it is characterized in that: comprise the metal level between dielectric layer and dielectric layer, wherein, dielectric layer comprises the first microstrip line dielectric layer, the second microstrip line dielectric layer, the 3rd microstrip line dielectric layer and the first strip line dielectric layer, the second strip line dielectric layer, the 3rd strip line dielectric layer, the 4th strip line dielectric layer, the 5th strip line dielectric layer, the 6th strip line dielectric layer that are arranged in order from top to bottom; Metal level comprises the strip line between the first ground plane, the 3rd strip line dielectric layer and the 4th strip line dielectric layer between microstrip line, the 3rd microstrip line dielectric layer and the first strip line dielectric layer on the first microstrip line dielectric layer, the second ground plane under layer 6 strip line dielectric layer, and described microstrip line is provided with microwave passive component main body.
2. LTCC miniaturization microwave passive component according to claim 1, it is characterized in that: between described microstrip line and strip line, be provided with through-hole interconnection, described through-hole interconnection is from top to bottom successively through the first microstrip line dielectric layer, the second microstrip line dielectric layer, the 3rd microstrip line dielectric layer, the first ground plane, the first strip line dielectric layer, the second strip line dielectric layer, the 3rd strip line dielectric layer.
3. LTCC miniaturization microwave passive component according to claim 2, is characterized in that: described through-hole interconnection and strip line form open circuit minor matters jointly.
4. LTCC miniaturization microwave passive component according to claim 2, is characterized in that: described microwave passive component main body is connected by through-hole interconnection with strip line.
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| CN201410376606.5A CN104201454A (en) | 2014-08-01 | 2014-08-01 | LTCC (Low Temperature Co-Fired Ceramic) miniaturization microwave passive device |
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| CN201410376606.5A CN104201454A (en) | 2014-08-01 | 2014-08-01 | LTCC (Low Temperature Co-Fired Ceramic) miniaturization microwave passive device |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105680133A (en) * | 2016-01-11 | 2016-06-15 | 中国电子科技集团公司第十研究所 | Inter-board perpendicular interconnection circuit structure for substrate integrated ridge waveguide |
| CN111293388A (en) * | 2019-02-25 | 2020-06-16 | 江南大学 | Substrate integrated waveguide filter based on electromagnetic hybrid coupling |
| CN112351580A (en) * | 2020-11-09 | 2021-02-09 | 西安邮电大学 | Microwave and millimeter wave frequency band LCP substrate and preparation method thereof |
| CN114122664A (en) * | 2021-11-19 | 2022-03-01 | 中国兵器工业集团第二一四研究所苏州研发中心 | Manufacturing method of coupled 3dB bridge based on LTCC |
| CN115499035A (en) * | 2022-11-15 | 2022-12-20 | 安徽大学 | LTCC-based radio frequency module and base station equipment |
-
2014
- 2014-08-01 CN CN201410376606.5A patent/CN104201454A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105680133A (en) * | 2016-01-11 | 2016-06-15 | 中国电子科技集团公司第十研究所 | Inter-board perpendicular interconnection circuit structure for substrate integrated ridge waveguide |
| CN105680133B (en) * | 2016-01-11 | 2018-08-10 | 中国电子科技集团公司第十研究所 | Vertical interconnection circuit structure between substrate integrated ridge waveguide plate |
| CN111293388A (en) * | 2019-02-25 | 2020-06-16 | 江南大学 | Substrate integrated waveguide filter based on electromagnetic hybrid coupling |
| CN112351580A (en) * | 2020-11-09 | 2021-02-09 | 西安邮电大学 | Microwave and millimeter wave frequency band LCP substrate and preparation method thereof |
| CN114122664A (en) * | 2021-11-19 | 2022-03-01 | 中国兵器工业集团第二一四研究所苏州研发中心 | Manufacturing method of coupled 3dB bridge based on LTCC |
| CN114122664B (en) * | 2021-11-19 | 2022-10-11 | 中国兵器工业集团第二一四研究所苏州研发中心 | Manufacturing method of LTCC-based coupling 3dB bridge |
| CN115499035A (en) * | 2022-11-15 | 2022-12-20 | 安徽大学 | LTCC-based radio frequency module and base station equipment |
| CN115499035B (en) * | 2022-11-15 | 2023-03-10 | 安徽大学 | LTCC-based radio frequency module and base station equipment |
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