CN104091989A - Minitype microwave millimeter wave self-load I/Q orthogonal filter - Google Patents
Minitype microwave millimeter wave self-load I/Q orthogonal filter Download PDFInfo
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- CN104091989A CN104091989A CN201410340186.5A CN201410340186A CN104091989A CN 104091989 A CN104091989 A CN 104091989A CN 201410340186 A CN201410340186 A CN 201410340186A CN 104091989 A CN104091989 A CN 104091989A
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Abstract
The invention relates to a minitype microwave millimeter wave self-load I/Q orthogonal filter. The orthogonal filter comprises surface-mounted 50-ohm impedance input and output ports, a broadside coupling strip line of a double helix structure and a matching load automatically connected at an isolated port. The structure is obtained through a multi-layer low-temperature co-fired ceramic technique. The orthogonal filter has the advantages of being easy and convenient to use, small in insertion loss, high in directivity, easy to debug, low in weight, small in size, high in reliability, good in electrical performance, good in temperature stability, low in cost, capable of being produced in a large scale and the like, is suitable for being used in occasions and corresponding systems with harsh requirements for size, electrical performance, temperature stability and reliability such as communication at corresponding millimeter wave frequency bands and satellite communication.
Description
Technical field
The present invention relates to a kind of miniature microwave and millimeter wave from the orthogonal device of load I/Q.
Background technology
In recent years, along with microminiaturized the developing rapidly of mobile communication, satellite communication and Defensive Avionics System, high-performance, low cost and miniaturization have become the developing direction of microwave current/RF application, and performance, size, reliability and cost to microwave device are all had higher requirement.The development of material science and technology and electromagnetic technique is depended in the miniaturization of microwave device and lightweight, greatly reduce the size of device based on low temperature co-fired technology (LTCC technology) sandwich construction, for miniaturization and the lighting of microwave passive component are had laid a good foundation.Coupler is the important composition parts in various microwave integrated circuits always, and the leading indicator of describing this component capabilities has: the degree of coupling, isolation, frequency range, standing-wave ratio, insertion loss, phase balance, temperature stability, volume, weight, reliability etc.
LTCC is a kind of Electronic Encapsulating Technology, adopts multi-layer ceramics technology, passive component can be built in to medium substrate inside, also active element can be mounted on to substrate surface and make passive/active integrated functional module simultaneously.LTCC technology all shows many merits at aspects such as cost, integration packaging, wiring live width and distance between centers of tracks, Low ESR metallization, design diversity and flexibility and high frequency performances, has become the mainstream technology of passive integration.The advantages such as it has high Q value, is convenient to embedded passive device, and thermal diffusivity is good, and reliability is high, high temperature resistant, punching shake, utilize LTCC technology, can well process size little, and precision is high, and tight type is good, the microwave device that loss is little.Because LTCC technology has the integrated advantage of 3 D stereo, be widely used for manufacturing various microwave passive elements at microwave frequency band, the height of realizing passive component is integrated.Based on the stack technology of LTCC technique, can realize three-dimensional integrated, thereby make that various miniature orthogonal utensils have that size is little, lightweight, performance is excellent, reliability is high, the plurality of advantages such as batch production performance high conformity and low cost, utilize its three-dimensional integrated morphology feature, can realize miniature microwave and millimeter wave from the orthogonal device of load I/Q.
Summary of the invention
The object of the present invention is to provide and a kind ofly formed and loss is little, directivity is high, volume is little to realize, easy to use, lightweight, reliability is high, electrical property is excellent, simple in structure, rate of finished products is high from connecing a matched load at its isolated port, high conformity, cost is low, temperature performance is stable miniature microwave and millimeter wave be from the orthogonal device of load I/Q in batches by the broadside coupled strip line of double-spiral structure.
The technical scheme that realizes the object of the invention is:
A kind of miniature microwave and millimeter wave is from the orthogonal device of load I/Q, comprise surface-pasted 50 ohmage input ports, the first matched line, the double-stranded broadside coupled strip line of ground floor, the second matched line, surface-pasted 50 ohmage straight-through ports, surface-pasted 50 ohmage coupling port, the 3rd matched line, the double-stranded broadside coupled strip line of the second layer, the 4th matched line, surface-pasted ohmage isolated port, tantalum resistance, the first coplanar waveguide structure, the second coplanar waveguide structure, wherein:
The first matched line, the double-stranded broadside coupled strip line of the second layer and the second matched line are at same plane, wherein the first matched line is connected with surface-pasted 50 ohmage input ports, the second matched line is connected with surface-pasted 50 ohmage straight-through ports, the double-stranded broadside coupled strip line left end of the second layer is connected with the first matched line, and the double-stranded broadside coupled strip line right-hand member of the second layer is connected with the second matched line;
The 3rd matched line, the double-stranded broadside coupled strip line of ground floor and the 4th matched line are at same plane, wherein the 3rd matched line is connected with surface-pasted 50 ohmage coupling port, the 4th matched line is connected with surface-pasted 50 ohmage isolated ports, the double-stranded broadside coupled strip line left end of ground floor is connected with the 3rd matched line, the double-stranded broadside coupled strip line right-hand member of ground floor is connected with the 4th matched line, and surface-pasted 50 ohmage isolated ports are connected with ground plate by tantalum resistance.
Compared with prior art, because the present invention adopts low-loss low-temperature co-burning ceramic material, 3 D stereo is integrated and directly certainly connect a matched load in isolated port, the remarkable advantage bringing is: (1) is easy to use, without can directly using in an external load; (2) insertion loss is low, and directivity is high; (3) volume is little, lightweight, reliability is high; (4) electrical property excellence; (5) direction and the ratio that can set according to designer are carried out power division; (6) cost is low; (7) circuit implementation structure is simple, can realize production in enormous quantities.
Brief description of the drawings
Fig. 1 is that the miniature microwave and millimeter wave of the present invention is from the orthogonal device profile of load I/Q and internal structure schematic diagram.
Fig. 2 is that the miniature microwave and millimeter wave of the present invention is from the Insertion Loss of the orthogonal device of load I/Q and the curve of the degree of coupling.
Fig. 3 is the stationary wave characteristic curve of the miniature microwave and millimeter wave of the present invention from the orthogonal device input port of load I/Q.
Fig. 4 is that the miniature microwave and millimeter wave of the present invention is from the orthogonal device isolation of load I/Q curve.
Fig. 5 is the phase parameter curve of the miniature microwave and millimeter wave of the present invention from the orthogonal device straight-through port of load I/Q and coupling port.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
In conjunction with Fig. 1, in the present embodiment, a kind of miniature microwave and millimeter wave is disclosed from the orthogonal device of load I/Q, comprise surface-pasted 50 ohmage input port P1, the first matched line L1, the double-stranded broadside coupled strip line U1 of ground floor, the second matched line L2, surface-pasted 50 ohmage straight-through port P2, surface-pasted 50 ohmage coupling port P3, the 3rd matched line L3, the double-stranded broadside coupled strip line U2 of the second layer, the 4th matched line L4, surface-pasted 50 ohmage isolated port P4, tantalum resistance R, the first coplanar waveguide structure (B1), the second coplanar waveguide structure B2, wherein:
The first matched line L1, the double-stranded broadside coupled strip line U2 of the second layer and the second matched line L2 are at same plane, wherein the first matched line L1 is connected with surface-pasted 50 ohmage input port P1, the second matched line L2 is connected with surface-pasted 50 ohmage straight-through port P2, the double-stranded broadside coupled strip line U2 left end of the second layer is connected with the first matched line L1, and the double-stranded broadside coupled strip line U2 right-hand member of the second layer is connected with the second matched line L2;
The 3rd matched line L3, the double-stranded broadside coupled strip line U1 of ground floor and the 4th matched line L4 are at same plane, wherein the 3rd matched line L3 is connected with surface-pasted 50 ohmage coupling port P3, the 4th matched line L4 is connected with surface-pasted 50 ohmage isolated port P4, the double-stranded broadside coupled strip line U1 left end of ground floor is connected with the 3rd matched line L3, the double-stranded broadside coupled strip line U1 right-hand member of ground floor is connected with the 4th matched line L4, surface-pasted 50 ohmage isolated port P4 are connected with ground plate by tantalum resistance R.
Aforementioned input port P1, straight-through port P2, coupling port P3 and isolated port P4 are all surface-pasted 50 ohmages, input port P1 is connected with the double-stranded broadside coupled strip line U2 of the second layer by the first matched line L1, straight-through port P2 is connected with the double-stranded broadside coupled strip line U2 of the second layer by the second matched line L2, coupling port P3 is connected with the double-stranded broadside coupled strip line U1 of ground floor by the 3rd matched line L3, isolated port P4 is connected with the double-stranded broadside coupled strip line U1 of ground floor by the 4th matched line L4, isolated port P4 is connected with ground plate by tantalum resistance R.
In a preferred embodiment, described surface-pasted 50 ohmage input port P1, the first matched line L1, the double-stranded broadside coupled strip line U1 of ground floor, the second matched line L2, surface-pasted 50 ohmage straight-through port P2, surface-pasted 50 ohmage coupling port P3, the 3rd matched line L3, the double-stranded broadside coupled strip line U2 of the second layer, the 4th matched line L4, surface-pasted 50 ohmage isolated port P4, tantalum resistance R and ground plate all adopt multilayer LTCC technique to realize.
Miniature microwave and millimeter wave is from the orthogonal device of load I/Q, because being adopts multilayer LTCC technique to realize, its low-temperature co-burning ceramic material and metallic pattern sintering at about 900 DEG C of temperature forms, so there is extreme high reliability and temperature stability, because structure adopts, 3 D stereo is integrated to be grounded and to encapsulate with multilayer folding structure and outer surface metallic shield, thereby volume is significantly reduced.
The miniature microwave and millimeter wave of the present invention can be made 3.2mm × 1.6mm × 1.5mm from the size of the orthogonal device of load I/Q, its performance can be found out from following Fig. 2-5, frequency range is at 2.7～2.9GHz, center frequency points is at 2.8GHz, the degree of coupling is at 3 ± 0.5dB, input port standing wave is that standing-wave ratio reaches 1.3 higher than 18dB, and isolation is better than 20dB, phase balance 90 ± 1 degree.
Claims (3)
1. a miniature microwave and millimeter wave is from the orthogonal device of load I/Q, it is characterized in that: comprise surface-pasted 50 ohmage input ports (P1), the first matched line (L1), the double-stranded broadside coupled strip line of ground floor (U1), the second matched line (L2), surface-pasted 50 ohmage straight-through ports (P2), surface-pasted 50 ohmage coupling port (P3), the 3rd matched line (L3), the double-stranded broadside coupled strip line of the second layer (U2), the 4th matched line (L4), surface-pasted 50 ohmage isolated ports (P4), tantalum resistance (R), the first coplanar waveguide structure (B1), the second coplanar waveguide structure (B2), wherein:
The first matched line (L1), the double-stranded broadside coupled strip line of the second layer (U2) and the second matched line (L2) are at same plane, wherein the first matched line (L1) is connected with surface-pasted 50 ohmage input ports (P1), the second matched line (L2) is connected with surface-pasted 50 ohmage straight-through ports (P2), the double-stranded broadside coupled strip line of the second layer (U2) left end is connected with the first matched line (L1), the double-stranded broadside coupled strip line of the second layer (U2) right-hand member is connected with the second matched line (L2),
The 3rd matched line (L3), the double-stranded broadside coupled strip line of ground floor (U1) and the 4th matched line (L4) are at same plane, wherein the 3rd matched line (L3) is connected with surface-pasted 50 ohmage coupling port (P3), the 4th matched line (L4) is connected with surface-pasted 50 ohmage isolated ports (P4), the double-stranded broadside coupled strip line of ground floor (U1) left end is connected with the 3rd matched line (L3), the double-stranded broadside coupled strip line of ground floor (U1) right-hand member is connected with the 4th matched line (L4), surface-pasted 50 ohmage isolated ports (P4) are connected with ground plate by tantalum resistance (R).
2. miniature microwave and millimeter wave according to claim 1 is from the orthogonal device of load I/Q, it is characterized in that: described surface-pasted 50 ohmage input ports (P1), the first matched line (L1), the double-stranded broadside coupled strip line of ground floor (U1), the second matched line (L2), surface-pasted 50 ohmage straight-through ports (P2), surface-pasted 50 ohmage coupling port (P3), the 3rd matched line (L3), the double-stranded broadside coupled strip line of the second layer (U2), the 4th matched line (L4), surface-pasted 50 ohmage isolated ports (P4), tantalum resistance (R) and ground plate all adopt multilayer LTCC technique to realize.
3. the miniature microwave and millimeter wave of one according to claim 1 and 2 is from the orthogonal device of load I/Q, it is characterized in that: input port (P1), straight-through port (P2), coupling port (P3) and isolated port (P4) are all surface-pasted 50 ohmages, input port (P1) is connected with the double-stranded broadside coupled strip line of the second layer (U2) by the first matched line (L1), straight-through port (P2) is connected with the double-stranded broadside coupled strip line of the second layer (U2) by the second matched line (L2), coupling port (P3) is connected with the double-stranded broadside coupled strip line of ground floor (U1) by the 3rd matched line (L3), isolated port (P4) is connected with the double-stranded broadside coupled strip line of ground floor (U1) by the 4th matched line (L4), isolated port (P4) is connected with ground plate by tantalum resistance (R).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410340186.5A CN104091989A (en) | 2014-07-16 | 2014-07-16 | Minitype microwave millimeter wave self-load I/Q orthogonal filter |
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| CN201410340186.5A CN104091989A (en) | 2014-07-16 | 2014-07-16 | Minitype microwave millimeter wave self-load I/Q orthogonal filter |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107464976A (en) * | 2017-08-22 | 2017-12-12 | 南京理工大学 | A kind of follow-on power splitters of L-waveband miniature LTCC six |
| CN107464975A (en) * | 2017-08-21 | 2017-12-12 | 南京理工大学 | A kind of polygon symmetrical one point of five power splitter of L-band |
| CN107464974A (en) * | 2017-08-21 | 2017-12-12 | 南京理工大学 | A kind of new polygon road power splitters of symmetrical structure five of LTCC |
| CN107464977A (en) * | 2017-08-30 | 2017-12-12 | 南京理工大学 | A kind of power splitter of LTCC sides patch resistance S-band four |
| CN107516755A (en) * | 2017-08-21 | 2017-12-26 | 南京理工大学 | A kind of LTCC pentagons rotational symmetry structure one divides four power splitters |
| CN107579326A (en) * | 2017-08-21 | 2018-01-12 | 南京理工大学 | A kind of power splitter of S-band symmetrical structure five |
| CN107591602A (en) * | 2017-08-21 | 2018-01-16 | 南京理工大学 | A kind of power splitters of symmetrical structure LTCC six |
| CN107591601A (en) * | 2017-08-21 | 2018-01-16 | 南京理工大学 | A kind of three-dimensionally integrated power splitters of structure five of LTCC |
| CN107611550A (en) * | 2017-08-21 | 2018-01-19 | 南京理工大学 | The pentagon rotational symmetry structure one of LTCC sides attachment divides four power splitters |
| CN107645028A (en) * | 2017-08-30 | 2018-01-30 | 南京理工大学 | A kind of power splitter of S-band lump symmetrical structure four based on LTCC |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107464975A (en) * | 2017-08-21 | 2017-12-12 | 南京理工大学 | A kind of polygon symmetrical one point of five power splitter of L-band |
| CN107464974A (en) * | 2017-08-21 | 2017-12-12 | 南京理工大学 | A kind of new polygon road power splitters of symmetrical structure five of LTCC |
| CN107516755A (en) * | 2017-08-21 | 2017-12-26 | 南京理工大学 | A kind of LTCC pentagons rotational symmetry structure one divides four power splitters |
| CN107579326A (en) * | 2017-08-21 | 2018-01-12 | 南京理工大学 | A kind of power splitter of S-band symmetrical structure five |
| CN107591602A (en) * | 2017-08-21 | 2018-01-16 | 南京理工大学 | A kind of power splitters of symmetrical structure LTCC six |
| CN107591601A (en) * | 2017-08-21 | 2018-01-16 | 南京理工大学 | A kind of three-dimensionally integrated power splitters of structure five of LTCC |
| CN107611550A (en) * | 2017-08-21 | 2018-01-19 | 南京理工大学 | The pentagon rotational symmetry structure one of LTCC sides attachment divides four power splitters |
| CN107464976A (en) * | 2017-08-22 | 2017-12-12 | 南京理工大学 | A kind of follow-on power splitters of L-waveband miniature LTCC six |
| CN107464977A (en) * | 2017-08-30 | 2017-12-12 | 南京理工大学 | A kind of power splitter of LTCC sides patch resistance S-band four |
| CN107645028A (en) * | 2017-08-30 | 2018-01-30 | 南京理工大学 | A kind of power splitter of S-band lump symmetrical structure four based on LTCC |
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Inventor after: Dai Yongsheng Inventor after: Yang Maoya Inventor after: Gu Jia Inventor after: Chen Long Inventor after: Zhou Yanfang Inventor before: Yang Maoya Inventor before: Gu Jia Inventor before: Chen Long Inventor before: Zhou Yanfang Inventor before: Dai Yongsheng |
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Free format text: CORRECT: INVENTOR; FROM: YANG MAOYA GU JIA CHEN LONG ZHOU YANFANG DAI YONGSHENG TO: DAI YONGSHENG YANG MAOYA GU JIA CHEN LONG ZHOU YANFANG |
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Application publication date: 20141008 |