CN107611550A - The pentagon rotational symmetry structure one of LTCC sides attachment divides four power splitters - Google Patents

Abstract

The invention discloses a kind of pentagon rotational symmetry structure one of LTCC sides attachment to divide four power splitters, power splitter includes the output port of four ohmages of surface mount 50, inside is formed by connecting by lumped-parameter element, using specific pentagon rotational symmetry cramped construction and three-dimensional integration, realized with multilayer LTCC technology, substantially reduce the volume of device.The present invention can make the input signal power fourth class assign to four output ports, it is small with Insertion Loss, isolation is high, phase difference is small between output port, small volume, it is in light weight, reliability is high, good electrical property, temperature stability is good, electrical property batch uniformity is good, cost is low, the advantages that can be mass-produced, it can be used as separate part, suitable for the communication of corresponding microwave frequency band, digital radar, radio communication handheld terminal etc. is to electrical property, material uniformity, hot mechanicalness, temperature stability, manufacturability and anti-interference have in the occasion and corresponding system of rigors.

Description

The pentagon rotational symmetry structure one of LTCC sides attachment divides four power splitters

Technical field

The invention belongs to microwave technical field, and in particular to a kind of using the one of LTCC pentagon rotational symmetry cramped constructions Divide four power splitters.

Background technology

Power divider is a kind of multiport microwave device, and it is that microwave signal all the way is distributed into decile or not decile Multichannel microwave signal, be by the power combiner of several signals synthesis signal all the way if being inverted use.Nowadays, Power divider obtains quite varied answer in wireless communication equipment, radar equipment, remote control remote sensing equipment, microwave measuring equipment With.The technical indicator of power divider mainly has：Insertion loss in working frequency, working frequency range, return loss in working frequency range, Output end phase difference, output end isolation etc., in addition, the temperature stability of power splitter, volume, weight etc., and weigh its property The important references content of energy.

In recent years, the miniaturization of mobile communication, satellite communication and Defensive Avionics System is rapid, high-performance, low cost Have become one of developing direction of microwave current technical field with miniaturization, the performance of microwave device, size, reliability and into Originally it is required to further be lifted.LTCC（LTCC）The integrated assembly technology that developed recently gets up, into For the mainstream technology of passive integration, turn into the developing direction in passive element field.It uses multi-layer ceramics technology, can will be passive Including components therein inside medium substrate, while active component can also be mounted on substrate surface be made it is passive/active integrated Functional module.Preparing plate passive integrated device and module using LTCC has many advantages, and ceramic material has excellent high frequency High-quality characteristic, the metal material high using electrical conductivity are advantageous to the quality factor of system, are also suitable for high current as conductor And resistant to elevated temperatures requirement, passive block can be embedded to Mulitilayer circuit board by it, be advantageous to improve system assembles density, it is easy to accomplish Multilayer wiring and encapsulation integral structure, can improve the adverse circumstances such as reliability, high temperature resistant, high humidity, using the life of discontinuous Production. art, it is easy to substrate to carry out quality testing to each layer of wiring and mutual linked hole before burning till, reduces cost.Due to LTCC technology With three-dimensional integration advantage, it is widely used for manufacturing various microwave passive components in microwave frequency band, realizes passive element It is highly integrated.

In order to adapt to the needs of miniaturization and multi-channel communication system, and also to meet circuit design cloth with a greater variety Office, it is significant to design a kind of multi-path power divider of polygon rotational symmetry structure, while is total in packaging sintering using low temperature The 3-dimensional multi-layered technical size of burning ceramics is small, in light weight, performance is excellent, reliability is high, batch production performance uniformity is good and inexpensive Many advantages, such as, it is possible to achieve the miniaturization of one point of four power splitter.

The content of the invention

Realize that small volume, high temperature resistant, cost are low, quality is high, stability is good, reliable it is an object of the invention to provide one kind Property high, material uniformity is good, high yield rate, the feature of environmental protection are good new pentagon rotational symmetry structure microwave one divide four work(point Device.

Realizing the technical scheme of the object of the invention is：A kind of pentagon rotational symmetry structure one of LTCC sides attachment divides four Power splitter, including the surface that the surface that impedance is 50 ohm can mount input port PIN, impedance is 50 ohm can mount output end One POUT1 of mouth, the surface that the surface that impedance is 50 ohm can mount the POUT2 of output port two, impedance is 50 ohm can mount defeated The POUT3 of exit port three, the surface that impedance is 50 ohm can mount the POUT1 of output port one, input connecting line LIN, spiral inductance One L1, the L2 of spiral inductance two, the L3 of spiral inductance three, the L4 of spiral inductance four, the C1 of electric capacity one, the C2 of electric capacity two, the C3 of electric capacity three, electric capacity four C4, central capacitive C0, the R1 of isolation resistance one, the R2 of isolation resistance two, the R3 of isolation resistance three, the R4 of isolation resistance four, capacitance connection post H, center connecting plate CENTER, earth plate SD, grounding ports GND1, grounding ports GND2, grounding ports GND3, grounding ports GND4, grounding ports GND5

The surface that impedance is 50 ohm can mount input port PIN and is connected with input connecting line LIN one end, input connecting line Lin The other end is connected with capacitance connection post H upper ends.The L1 of spiral inductance one has four layers, is followed successively by first, second, third and fourth layer from the top down, The L2 of spiral inductance two has four layers, is followed successively by first, second, third and fourth layer from the top down, the L3 of spiral inductance three has four layers, from the top down First, second, third and fourth layer is followed successively by, the L4 of spiral inductance four there are four layers, is followed successively by first, second, third and fourth layer from the top down, spiral electricity Feel the 4th layer of a L1, the 4th layer of the L2 of spiral inductance two, the 4th layer of the L3 of spiral inductance three, the 4th layer of the L4 of spiral inductance four respectively with electricity Hold connecting pole H upper ends to be connected, the L1 first layers of spiral inductance one can mount the POUT1 of output port one with the surface that impedance is 50 ohm Be connected, the L2 first layers of spiral inductance two and impedance for 50 ohm of surface can mount the POUT2 of output port two be connected, spiral inductance The surface that three L3 first layers and impedance are 50 ohm can mount the POUT3 of output port three be connected, the L4 first layers of spiral inductance four and Impedance is that 50 ohm of surface can mount the POUT4 of output port four and be connected.Step and capacitance connection post H lower ends on central capacitive C0 It is connected, bottom crown is earth plate SD.The C1 top crowns of electric capacity one can mount the POUT1 of output port one with the surface that impedance is 50 ohm Connection, the C2 top crowns of electric capacity two can mount the POUT2 of output port two with the surface that impedance is 50 ohm and be connected, pole on the C3 of electric capacity three Plate can mount the POUT3 of output port three with the surface that impedance is 50 ohm and be connected, and the C4 top crowns of electric capacity four are 50 ohm with impedance Surface can mount the POUT4 connections of output port three, step is under the C1 of electric capacity one, the C2 of electric capacity two, the C3 of electric capacity three, the C4 of electric capacity four Earth plate SD.The R1 of isolation resistance one can mount output port one positioned at encapsulation side surface, one end with the surface that impedance is 50 ohm POUT1 connections, the other end are connected with center connecting plate CENTER；The R2 of isolation resistance two is positioned at encapsulation side surface, one end and impedance The POUT2 connections of output port two can be mounted for 50 ohm of surfaces, the other end is connected with center connecting plate CENTER；Isolation resistance For three R3 positioned at encapsulation side surface, one end and impedance are that 50 ohm of surface can mount the POUT3 of output port three and be connected, the other end and Center connecting plate CENTER is connected；The R4 of isolation resistance four can paste positioned at encapsulation side surface, one end with the surface that impedance is 50 ohm The POUT4 connections of output port four are filled, the other end is connected with center connecting plate CENTER.The GND1 of grounding ports one, grounding ports two GND2, the GND3 of grounding ports three, the GND4 of grounding ports four, the GND5 of grounding ports five are connected with earth plate SD.

The surface that the surface that impedance is 50 ohm can mount input port PIN, impedance is 50 ohm can mount output port The surface that the surface that one POUT1, impedance are 50 ohm can mount the POUT2 of output port two, impedance is 50 ohm can mount output The POUT3 of port three, the surface that impedance is 50 ohm can mount the POUT4 of output port four, input connecting line LIN, spiral inductance one L1, the L2 of spiral inductance two, the L3 of spiral inductance three, the L4 of spiral inductance four, the C1 of electric capacity one, the C2 of electric capacity two, the C3 of electric capacity three, electric capacity four C4, central capacitive C0, capacitance connection post H, center connecting plate CENTER, earth plate SD, grounding ports GND1, grounding ports GND2, grounding ports GND3, grounding ports GND4, grounding ports GND5 are realized using multilayer LTCC technique.Institute There is inductance to use rectangle stereoscopic multi-layer sped structure, electric capacity uses the structure of metal-dielectric-metal form, and center connects Fishplate bar CENTER is printed at one point of four power splitter encapsulation upper surface center, isolation resistance using SMT Chip-Rs Surface Mount in One point of four power splitter encapsulates upper surface.

LTCC is processing technology of the present invention, its possessed uniformity is good, precision is high, small volume, cost are low, The advantages that reliability is high, temperature stability is good, electrical property is high is not available for other processing technologys.In addition, the present invention uses Pentagon rotational symmetry structure, its advantage is notable, specifically include：（1）Small volume, in light weight, cost is low；（2）Circuit realiration It is simple in construction, it can be achieved to produce in enormous quantities；（3）Reliability is high；（4）It is easy to install and use, used separately as part, Ke Yitong Cross full-automatic chip mounter installation and welding.

Brief description of the drawings

Fig. 1（a）It is that the pentagon rotational symmetry structure one of LTCC sides attachment of the present invention divides the internal structure of four power splitters Schematic diagram, Fig. 1（b）It is that a kind of pentagon rotational symmetry structure one of LTCC sides attachment of the present invention divides the outside of four power splitters to show It is intended to, Fig. 1（c）It is the surface encapsulation that a kind of pentagon rotational symmetry structure one of LTCC sides attachment of the present invention divides four power splitters Schematic diagram.

Fig. 2 is that the pentagon rotational symmetry structure one of LTCC sides of the present invention attachment divides four power splitter input ports and each defeated Exit port return loss plot figure.

Fig. 3 is that the pentagon rotational symmetry structure one of LTCC sides attachment of the present invention divides four power splitter output port amplitudes to put down Weigh linearity curve figure.

Fig. 4（a）It is that the pentagon rotational symmetry structure one that LTCC sides of the present invention mount divides four power splitter output ports one Isolation curve map, Fig. 4 between remaining output port（b）It is the pentagon rotational symmetry structure of LTCC sides attachment of the present invention Isolation curve map between one point of four power splitter output port two and remaining output port, Fig. 4（c）It is LTCC sides patch of the present invention The pentagon rotational symmetry structure one of dress divides isolation curve map between four power splitter output ports three and remaining output port, figure 4（d）It is that the pentagon rotational symmetry structure one that LTCC sides of the present invention mount divides four power splitter output ports four and remaining output Isolation curve map between port.

Fig. 5 is that the pentagon rotational symmetry structure one of LTCC sides attachment of the present invention divides four power splitter output port phases one Cause linearity curve figure.

Embodiment

The invention will be further described below in conjunction with the accompanying drawings.

With reference to Fig. 1（a）、（b）, a kind of pentagon rotational symmetry structure one of LTCC sides attachment divides four power splitters, including The surface that the surface that impedance is 50 ohm can mount input port PIN, impedance is 50 ohm can mount the POUT1 of output port one, The surface that the surface that impedance is 50 ohm can mount the POUT2 of output port two, impedance is 50 ohm can mount output port three POUT3, the surface that impedance is 50 ohm can mount the POUT4 of output port four, input connecting line LIN, the L1 of spiral inductance one, spiral The L2 of inductance two, the L3 of spiral inductance three, the L4 of spiral inductance four, the C1 of electric capacity one, the C2 of electric capacity two, the C3 of electric capacity three, the C4 of electric capacity four, middle electrocardio Hold C0, the R1 of isolation resistance one, the R2 of isolation resistance two, the R3 of isolation resistance three, the R4 of isolation resistance four, capacitance connection post H, center connection Plate CENTER, earth plate SD, grounding ports GND1, grounding ports GND2, grounding ports GND3, grounding ports GND4, earth terminal Mouth GND5.

With reference to Fig. 1（a）、（b）, the surface that impedance is 50 ohm can mount input port PIN and input connecting line LIN one end Connection, the input connecting line Lin other ends are connected with capacitance connection post H upper ends.The L1 of spiral inductance one has four layers, from the top down successively For first, second, third and fourth layer, the L2 of spiral inductance two has four layers, is followed successively by first, second, third and fourth layer from the top down, spiral inductance three L3 has four layers, is followed successively by first, second, third and fourth layer from the top down, and the L4 of spiral inductance four has four layers, be followed successively by first from the top down, 2nd, three, four layers, the 4th layer of the L1 of spiral inductance one, the 4th layer of the L2 of spiral inductance two, the 4th layer of the L3 of spiral inductance three, spiral inductance The 4th layer of four L4 are connected with capacitance connection post H upper ends respectively, and the L1 first layers of spiral inductance one can with the surface that impedance is 50 ohm Attachment output port one POUT1 is connected, the L2 first layers of spiral inductance two can mount output port with impedance for 50 ohm of surface Two POUT2 are connected, the L3 first layers of spiral inductance three and impedance for 50 ohm of surface can mount the POUT3 of output port three be connected, The L4 first layers of spiral inductance four can mount the POUT4 of output port four with the surface that impedance is 50 ohm and be connected.On central capacitive C0 Step is connected with capacitance connection post H lower ends, and bottom crown is earth plate SD.The C1 top crowns of electric capacity one and the surface that impedance is 50 ohm The POUT1 connections of output port one can be mounted, the C2 top crowns of electric capacity two can mount output port two with the surface that impedance is 50 ohm POUT2 connections, the C3 top crowns of electric capacity three can mount the POUT3 of output port three with the surface that impedance is 50 ohm and be connected, electric capacity four C4 top crowns can mount the POUT4 of output port three with the surface that impedance is 50 ohm and be connected, the C1 of electric capacity one, the C2 of electric capacity two, electric capacity Step is earth plate SD under three C3, the C4 of electric capacity four.The R1 of isolation resistance one is 50 ohm with impedance positioned at encapsulation side surface, one end Surface can mount the POUT1 connections of output port one, the other end is connected with center connecting plate CENTER；The R2 of isolation resistance two is located at Side surface is encapsulated, one end can mount the POUT2 of output port two with the surface that impedance is 50 ohm and be connected, and the other end is connected with center Plate CENTER is connected；The R3 of isolation resistance three can mount output end positioned at encapsulation side surface, one end with the surface that impedance is 50 ohm Three POUT3 connections of mouth, the other end are connected with center connecting plate CENTER；The R4 of isolation resistance four positioned at encapsulation side surface, one end with Impedance is that 50 ohm of surface can mount the POUT4 connections of output port four, and the other end is connected with center connecting plate CENTER.Ground connection The GND1 of port one, the GND2 of grounding ports two, the GND3 of grounding ports three, the GND4 of grounding ports four, the GND5 of grounding ports five are with connecing Floor SD is connected.

With reference to Fig. 1（a）、（b）, surface that impedance is 50 ohm can mount input port PIN, the surface that impedance is 50 ohm The POUT1 of output port one can be mounted, the surface that impedance is 50 ohm can mount the POUT2 of output port two, impedance is 50 ohm The surface that surface can mount the POUT3 of output port three, impedance is 50 ohm can mount the POUT4 of output port four, input connecting line LIN, the L1 of spiral inductance one, the L2 of spiral inductance two, the L3 of spiral inductance three, the L4 of spiral inductance four, the C1 of electric capacity one, the C2 of electric capacity two, electricity Hold three C3, the C4 of electric capacity four, central capacitive C0, capacitance connection post H, center connecting plate CENTER, earth plate SD, grounding ports GND1, grounding ports GND2, grounding ports GND3, grounding ports GND4, grounding ports GND5 use the low temperature co-fired pottery of multilayer Porcelain technique is realized.All inductance use rectangle stereoscopic multi-layer sped structure, and electric capacity uses metal-dielectric-metal form Structure, center connecting plate CENTER is printed at one point of four power splitter encapsulation upper surface center, and isolation resistance uses 0402 The SMT Chip-Rs Surface Mount of package dimension encapsulates upper surface in one point of four power splitter.

A kind of pentagon rotational symmetry structure one of LTCC sides attachment divides four power splitters, due to being total to using multilayer low temperature Burn ceramic process realize, the sintering temperature of used metallic pattern and low-temperature co-burning ceramic material is about 900 DEG C, have compared with High temperature stability and reliability.Because structure uses three-dimensional integration and multilayer folding structure and outer surface metal screen Cover and be grounded and encapsulate so that small product size reaches minimum, and cost is preferably minimized.

The present invention is based on the external isolation resistance power splitter of LTCC technology for one kind, and its radius is only 4mm, performance can from Fig. 2, Fig. 3, Fig. 4 find out that bandwidth 1.4GHz ~ 1.6GHz, input port and each output port return loss are better than 20dB substantially, each output Amplitude difference between port is less than 0.2dB, and for phase difference less than 1.5 degree, the isolation between each output port is more than 25dB.

Claims (5)

1. a kind of pentagon rotational symmetry structure one of LTCC sides attachment divides four power splitters, it is characterised in that：It is including impedance 50 ohm of surface can mount input port（PIN）, impedance be that 50 ohm of surface can mount output port one（POUT1）, resistance Output port two can be mounted for 50 ohm of surface by resisting（POUT2）, impedance be that 50 ohm of surface can mount output port three （POUT3）, impedance be that 50 ohm of surface can mount output port four（POUT4）, input connecting line（LIN）, spiral inductance one （L1）, spiral inductance two（L2）, spiral inductance three（L3）, spiral inductance four（L4）, electric capacity one（C1）, electric capacity two（C2）, electric capacity Three（C3）, electric capacity four（C4）, central capacitive（C0）, isolation resistance one（R1）, isolation resistance two（R2）, isolation resistance three（R3）、 Isolation resistance four（R4）, capacitance connection post（H）, center connecting plate（CENTER）, earth plate（SD）, grounding ports one（GND1）、 Grounding ports two（GND2）, grounding ports three（GND3）, grounding ports four（GND4）, grounding ports five（GND5）；Impedance is 50 The surface of ohm can mount input port（PIN）With inputting connecting line（LIN）One end connects, and inputs connecting line（Lin）The other end With capacitance connection post（H）Upper end is connected；Spiral inductance one（L1）There are four layers, be followed successively by first, second, third and fourth layer from the top down, spiral shell Revolve inductance two（L2）There are four layers, be followed successively by first, second, third and fourth layer from the top down, spiral inductance three（L3）Have four layers, on to Under be followed successively by first, second, third and fourth layer, spiral inductance four（L4）There are four layers, be followed successively by first, second, third and fourth layer from the top down, spiral shell Revolve inductance one（L1）4th layer, spiral inductance two（L2）4th layer, spiral inductance three（L3）4th layer, spiral inductance four（L4）The Four layers respectively with capacitance connection post（H）Upper end is connected, spiral inductance one（L1）First layer can paste with the surface that impedance is 50 ohm Fill output port one（POUT1）It is connected, spiral inductance two（L2）First layer can mount output end with the surface that impedance is 50 ohm Mouth two（POUT2）It is connected, spiral inductance three（L3）First layer can mount output port three with the surface that impedance is 50 ohm （POUT3）It is connected, spiral inductance four（L4）First layer can mount output port four with the surface that impedance is 50 ohm（POUT4）Phase Even；Central capacitive（C0）Upper step and capacitance connection post（H）Lower end is connected, and bottom crown is earth plate（SD）；Electric capacity one（C1）On Pole plate can mount output port one with the surface that impedance is 50 ohm（POUT1）Connection, electric capacity two（C2）Top crown is with impedance 50 ohm of surface can mount output port two（POUT2）Connection, electric capacity three（C3）Top crown and the surface that impedance is 50 ohm Output port three can be mounted（POUT3）Connection, electric capacity four（C4）Top crown can mount output end with the surface that impedance is 50 ohm Mouth three（POUT4）Connection, electric capacity one（C1）, electric capacity two（C2）, electric capacity three（C3）, electric capacity four（C4）Lower step is earth plate （SD）；Isolation resistance one（R1）Positioned at encapsulation side surface, one end can mount output port one with the surface that impedance is 50 ohm （POUT1）Connection, the other end and center connecting plate（CENTER）It is connected；Isolation resistance two（R2）Positioned at encapsulation side surface, one end With impedance output port two can be mounted for 50 ohm of surface（POUT2）Connection, the other end and center connecting plate（CENTER）Phase Even；Isolation resistance three（R3）Positioned at encapsulation side surface, one end can mount output port three with the surface that impedance is 50 ohm （POUT3）Connection, the other end and center connecting plate（CENTER）It is connected；Isolation resistance four（R4）Positioned at encapsulation side surface, one end With impedance output port four can be mounted for 50 ohm of surface（POUT4）Connection, the other end and center connecting plate（CENTER）Phase Even；Grounding ports one（GND1）, grounding ports two（GND2）, grounding ports three（GND3）, grounding ports four（GND4）, earth terminal Mouth five（GND5）And earth plate（SD）It is connected.

2. the pentagon rotational symmetry structure one of LTCC sides attachment according to claim 1 divides four power splitters, its feature It is：Impedance is that 50 ohm of surface can mount input port（PIN）, impedance be that 50 ohm of surface can mount output port one （POUT1）, impedance be that 50 ohm of surface can mount output port two（POUT2）, that impedance is that 50 ohm of surface can mount is defeated Exit port three（POUT3）, impedance be that 50 ohm of surface can mount output port four（POUT4）, input connecting line（LIN）, spiral shell Revolve inductance one（L1）, spiral inductance two（L2）, spiral inductance three（L3）, spiral inductance four（L4）, electric capacity one（C1）, electric capacity two （C2）, electric capacity three（C3）, electric capacity four（C4）, central capacitive（C0）, capacitance connection post（H）, center connecting plate（CENTER）, ground connection Plate（SD）, grounding ports（GND1）, grounding ports（GND2）, grounding ports（GND3）, grounding ports（GND4）, grounding ports （GND5）Realized using multilayer LTCC technique.

3. the pentagon rotational symmetry structure one of LTCC sides attachment according to claim 1 divides four power splitters, its feature It is：Described inductance uses square 3-dimensional multi-layered sped structure, and electric capacity uses the knot of metal-dielectric-metal form Structure.

4. the pentagon rotational symmetry structure one of LTCC sides attachment according to claim 1 divides four power splitters, its feature It is：Described center connecting plate（CENTER）It is printed in one point of four power splitter package surface.

5. the pentagon rotational symmetry structure one of LTCC sides attachment according to claim 1 divides four power splitters, its feature It is：Described isolation resistance one（R1）, isolation resistance two（R2）, isolation resistance three（R3）, isolation resistance four（R4）Use SMT Chip-Rs, dress are affixed on one point of four power splitter encapsulation side surface.