CN111696959B - Millimeter wave broadband matching structure of ball grid array in wafer level packaging and design method - Google Patents
Millimeter wave broadband matching structure of ball grid array in wafer level packaging and design method Download PDFInfo
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- CN111696959B CN111696959B CN202010564256.0A CN202010564256A CN111696959B CN 111696959 B CN111696959 B CN 111696959B CN 202010564256 A CN202010564256 A CN 202010564256A CN 111696959 B CN111696959 B CN 111696959B
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76895—Local interconnects; Local pads, as exemplified by patent document EP0896365
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
Abstract
A millimeter wave broadband matching structure of a ball grid array in wafer level packaging and a design method belong to the technical field of microwave and millimeter wave packaging circuit systems, wherein the upper surface of a microwave dielectric substrate is sequentially connected with a first stub signal line, a multi-stage stepped impedance resonator and a front end circuit transmission line along the positive direction of an x axis; millimeter wave signals output by the central signal BGA solder ball connecting structure are transmitted to the multistage stepped impedance resonator through the first stub signal wire to realize broadband matching, and then are transmitted to the front-end circuit transmission line by the multistage stepped impedance resonator to be output, so that the broadband matching of the central signal BGA solder ball connecting structure and the front-end circuit transmission line is realized, and the problem of impedance mismatching between the silicon through hole BGA interconnection impedance compensation structure and the front-end circuit signal wire caused by the fact that the bottom of the BGA solder ball is larger than the signal wire width of the front-end circuit of the microwave dielectric substrate in the three-dimensional wafer-level packaging silicon through hole BGA interconnection impedance compensation structure is solved.
Description
Technical Field
The invention belongs to the technical field of microwave and millimeter wave packaging circuit systems, and particularly relates to a ball grid array millimeter wave broadband matching structure in wafer level packaging and a design method thereof.
Background
With the rapid development of modern communication technology and radar technology, a circuit system develops in the direction of high integration, high speed, miniaturization and low power consumption, and the size of an interconnection structure connecting a chip and a substrate is in the same order of magnitude as the wavelength of a signal under the condition of high-frequency microwaves, so that the signal presents a fluctuation effect on a transmission line, and the signal transmission is adversely affected. Therefore, packaging has become a critical factor that has restricted the development of high frequency integrated circuits. Advanced three-dimensional wafer level package interconnection provides a feasible technical solution for solving the bottleneck brought by the rapid development of miniaturized high-performance radio frequency integrated systems. Thanks to the flip chip technology, a three-dimensional stacked structure is formed by vertically bonding Through-Silicon vias (TSVs) inside a chip to a microwave dielectric substrate Through a Ball Grid Array (BGA) solder Ball Via a chip port. The three-dimensional integration not only realizes the interconnection of the multilayer packaging system in the vertical direction, but also realizes the electrical connection between adjacent layers. Obviously, the three-dimensional wafer level packaging technology can greatly improve the system integration level, remarkably reduce the use of long interconnecting wires, improve the signal transmission quality and further reduce the system power consumption.
Firstly, with the rapid development of the fields of 5G communication, automobile radar and the like, the demand of people on a high-speed and high-resolution radio frequency packaging system is continuously increased, the working frequency of a radio frequency circuit in the packaging is also continuously increased, and the frequency band is increased to a millimeter wave frequency band, so that the impedance discontinuity brought by an interconnection structure in three-dimensional wafer level packaging is increased.
Secondly, aiming at a high-performance and miniaturized high-frequency radio-frequency packaging system, the working frequency of the packaging system is increased to a millimeter wave frequency band, the problem of impedance mismatching between a chip and a microwave dielectric substrate caused by an interconnection structure in three-dimensional wafer level packaging is solved, and the interconnection structure is as important as a matching structure of a front end circuit of the microwave radio-frequency substrate.
In the prior art, Wang Chun Long proposes a flip chip package design based on local matching. The structure subtracts redundant transverse conductors of a coplanar waveguide ground plane in the interconnection structure, and realizes good impedance matching of the interconnection structure by selecting proper transverse change, but the interconnection structure from CPW to CPW is not suitable for the advanced packaging process with silicon through holes and ball grid arrays of three-dimensional wafer level packaging; song of japan proposes a novel flip chip coplanar stripline interconnection structure, which has an insertion loss of less than 3dB at a frequency of 35GHz and a return loss of more than 15dB at a frequency of 29GHz, and has a large interconnection structure loss; young Seek Cho proposes an interconnection structure of a local matching flip chip, which realizes better transmission characteristics by adding an air bag and a groove with micro mechanical characteristics on a traditional flip chip interconnection model, but increases the processing complexity and thickness of the interconnection structure, and is not suitable for a high-performance miniaturized millimeter wave radio frequency packaging system.
Aiming at a high-performance and miniaturized high-frequency radio frequency packaging system, the working frequency of the packaging system is increased to a millimeter wave frequency band, so that the problem of impedance mismatching between a chip and a microwave medium substrate caused by a three-dimensional wafer level packaging interconnection structure is solved, and the interconnection structure is also important as the matching structure of a front-end circuit of the microwave radio frequency substrate.
When the frequency is increased to a millimeter wave frequency band, the bottom of the BGA solder ball is larger than the width of a signal line of a front-end circuit of the microwave dielectric substrate, and the width and the impedance matching between the wider through-silicon-via BGA interconnection impedance compensation structure and the narrower front-end circuit signal line needs to be realized through a matching structure.
The traditional broadband range impedance matching method on the microwave dielectric substrate is realized by a multi-stage quarter-wave line, but in a miniaturized and highly-integrated packaging system, the size is an important factor for restricting the circuit design, the overlong matching branch between the BGA interconnection structure and the front-end circuit of the microwave radio-frequency substrate breaks away from the design requirement of high integration, and the single quarter-wave line cannot meet the requirement of the high-performance radio-frequency packaging system with a broadband.
In the prior art, documents with a publication date of 2018 and 4 months are disclosed: the microwave millimeter wave multi-chip module three-dimensional interconnection and packaging technology (the "microwave bulletin", fourteenth research institute of the Chinese electronic technology group, Wu jin wealth, etc.) specifically discloses: the microwave millimeter wave solid-state active phased array antenna is widely applied to electronic equipment such as communication, radar and navigation, and the three-dimensional interconnection and packaging technology is a key technology for developing a microwave millimeter wave multi-chip module (MMCM) of a miniaturized, high-integration and high-reliability active phased array antenna. By developing the optimized design of the three-dimensional multi-layer multi-chip thermal layout, the temperature of the MMCM is uniformly distributed, and the reliable work of the three-dimensional MMCM is ensured.
In the above documents, a miniaturized, high-performance and high-reliability three-dimensional microwave and millimeter wave multi-chip module is developed by developing a low temperature co-fired ceramic (LTCC) multi-layer circuit substrate with a double-sided high-precision cavity, and adopting a Ball Grid Array (BGA) and a fuzz button microwave and millimeter wave vertical interconnection process and a laser sealing welding process, so as to meet the technical requirements of a new generation of microwave and millimeter wave phased Array antenna, but the problems mentioned in the present invention are not solved.
Therefore, how to solve the contradiction between the broadband transmission performance and the size of the matching branch in the millimeter wave broadband matching structure for interconnecting the through silicon via to the ball grid array to the microwave dielectric substrate in the three-dimensional wafer level package has become an urgent technical problem to be solved.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to solve the contradiction of the millimeter wave broadband matching structure of the ball grid array interconnection in the three-dimensional wafer level packaging in the broadband transmission performance and the size of the matching branch.
The invention solves the technical problems through the following technical scheme: the millimeter wave broadband matching structure of the ball grid array in the wafer level packaging comprises a microwave dielectric substrate (91), wherein the upper surface of the microwave dielectric substrate (91) is sequentially connected with a first branch (11) signal line, a multi-level stepped impedance resonator and a front end circuit transmission line (18) along the positive direction of an x axis; the multistage stepped impedance resonator comprises signal lines of a second branch (12), a third branch (13), a fourth branch (14), a fifth branch (15), a sixth branch (16) and a seventh branch (17), which are sequentially connected with the upper surface of a microwave dielectric substrate (91) along the positive direction of an x axis, wherein the signal lines are in a grounded coplanar waveguide structure; the signal lines from the first branch (11) to the seventh branch (17) are all rectangular, and the central lines of the signal lines in the y-axis direction are on the same straight line; the widths of the signal lines from the first branch (11) to the fourth branch (14) are sequentially increased progressively, and the widths of the signal lines from the fourth branch (14) to the seventh branch (17) are sequentially decreased progressively; the widths from the center line of the first branch (12) to the sixth branch (16) in the y-axis direction to the metal grounding plates (81) on two sides are the same, the widths from the center line of the seventh branch (17) in the y-axis direction to the metal grounding plates (81) on two sides are reduced along the positive direction of the x-axis, and the widths from the center line of the front-end circuit transmission line (18) in the y-axis direction to the metal grounding plates (81) on two sides are the same; millimeter wave signals are transmitted to the multistage stepped impedance resonator through the first branch (11) signal line to realize broadband matching, and then transmitted to the front-end circuit transmission line (18) through the multistage stepped impedance resonator to be output.
The invention realizes the broadband matching of the central signal BGA solder ball connecting structure and the front-end circuit transmission line through the adjusting function of the multistage stepped impedance resonator, and solves the problem of impedance mismatching between the silicon through hole BGA interconnection impedance compensation structure and the front-end circuit signal line in the silicon through hole BGA interconnection impedance compensation structure in the three-dimensional wafer level packaging due to the fact that the bottom of the BGA solder ball is larger than the width of the signal line of the front-end circuit of the microwave dielectric substrate.
As a further improvement of the technical scheme of the invention, the millimeter wave broadband matching structure of the ball grid array in the wafer level packaging further comprises a silicon-based chip (1), a central signal BGA solder ball connecting structure (31), a circular metal disc (21), a broadband matching structure, a front end circuit transmission line (18) and an annular gap (41); the silicon-based chip (1) is connected with the microwave dielectric substrate (91) in a flip-chip mode through a central signal BGA solder ball connecting structure (31); the upper surface of the silicon-based chip (1) comprises a circuit signal line (61) for transmitting millimeter wave signals, the interior of the silicon-based chip (1) comprises a central signal silicon through hole (51) vertically connected with the circuit signal line (61), and the lower surface of the silicon-based chip (1) comprises a circular BGA bonding pad (19) vertically connected with the central signal silicon through hole (51); the annular gap (41) is positioned on the lower surface of the silicon-based chip (1), the outer edge of the annular gap (41) and the circular BGA bonding pad (19) are concentric circles, the diameter of the annular gap is larger than that of the circular BGA bonding pad (19), and the annular gap is used for impedance compensation from the central signal silicon through hole (51) to the central signal BGA solder ball connecting structure (31); millimeter wave signals are transmitted to a central signal BGA solder ball connecting structure (31) from a circuit signal line (61) in a silicon-based chip (1) through a central signal silicon through hole (51) and a BGA bonding pad (19), and then are transmitted to a front-end circuit transmission line (18) to be output through a circular metal disc (21), a first branch (11) signal line and a multi-stage stepped impedance resonator in sequence.
The size of the annular gap at the bottom of the silicon-based chip is adjusted by changing the diameter of the annular gap, so that the self capacitance of the gap and the parasitic inductance of the silicon through hole meet the resonance state, the characteristic impedance of the structure is kept unchanged, the capacitance between the silicon through hole of the central signal and the ground is changed, the parasitic inductance is compensated, the high-frequency parasitic effect brought by the BGA interconnection structure in the three-dimensional wafer level packaging is eliminated, and the impedance matching of the interconnection structure in the packaging system is realized.
As a further improvement of the technical scheme of the invention, the microwave dielectric substrate (91) comprises two side metal grounding plates (81) on the upper surface, a lower layer metal grounding plate (82) on the lower surface and a metal through hole (71) for connecting the two side metal grounding plates (81) and the lower layer metal grounding plate (82); the metal through holes (71) are uniformly distributed on two sides of the signal lines from the first branch (11) to the seventh branch (17) and the front-end circuit transmission line (18) and are used for binding signals around the branches and the front-end circuit transmission line (18).
As a further improvement of the technical scheme of the invention, the silicon-based chip (1) also comprises a plurality of surrounding ground through silicon vias (52), and the surrounding ground through silicon vias (52) are uniformly arranged around the central signal through silicon via (51) in a surrounding manner by taking the central signal through silicon via (51) as a center and are used for binding signals around the central signal through silicon via (51).
As a further improvement of the technical scheme of the invention, a plurality of surrounding BGA solder ball connecting structures (32) are further arranged between the silicon-based chip (1) and the microwave medium substrate (91), the surrounding BGA solder ball connecting structures (32) take the central signal BGA solder ball connecting structure (31) as the center, are uniformly arranged around the central signal BGA solder ball connecting structure (31) in a U-shaped manner, the distance between two adjacent surrounding BGA solder ball connecting structures (32) is equal, and the silicon-based chip (1) is connected with the metal grounding plates (81) on two sides of the upper surface of the microwave medium substrate (91) and is used for binding signals around the central signal BGA solder ball connecting structure (31).
As a further improvement of the technical scheme of the invention, a semicircular gap (22) is etched in the negative direction of the x axis of the circular metal disc (21), and the radius of the edge semicircle of the semicircular gap (22) is the same as the width from the center line of the first branch (11) in the direction of the y axis to the metal grounding plates (81) at two sides.
As a further improvement of the technical scheme of the invention, the size calculation formula of the circular metal disc (21) and the semicircular gap (22) is as follows:
R1≈1.5·W (1)
R3≈2.8·R1 (2)
wherein R1 is the diameter of the circular metal disc (21), and R3 is the diameter of the semicircular gap (22); w is the width of the signal line of the first branch (11).
As a further improvement of the technical scheme of the invention, the formula for calculating the diameter of the annular gap (41) is as follows:
R2≈0.7·R3 (3)
wherein R2 is the diameter of the annular gap, and R3 is the diameter of the semicircular gap (22).
As a further improvement of the technical scheme of the invention, the first branch (11) to the seventh branch (17) are of a symmetrical half-wavelength ladder resonator structure.
A design method applied to a millimeter wave broadband matching structure of a ball grid array in wafer level packaging is characterized in that a first branch (11) signal line, a multi-level stepped impedance resonator and a front end circuit transmission line (18) are sequentially connected with the upper surface of a microwave dielectric substrate (91) along the positive direction of an x axis; the multistage stepped impedance resonator comprises signal lines of a second branch (12), a third branch (13), a fourth branch (14), a fifth branch (15), a sixth branch (16) and a seventh branch (17), which are sequentially connected with the upper surface of a microwave dielectric substrate (91) along the positive direction of an x axis; the size calculation formulas of the signal wires from the first branch (11) to the seventh branch (17) are as follows:
2·l1+5·l2≈λg (5)
wherein λ isgIs the wavelength of guided waves in the medium, c is the speed of light in free space, f0Is the frequency of the working center,. epsiloneffIs the effective dielectric constant of the dielectric material, /)1Is the length of the first branch signal line, theta1Is the first branch electricity length,/2The length of the second, third, fourth, fifth and sixth branch signal lines theta2The second, third, fourth, fifth and sixth electricity-saving lengths; z1Is the first branch impedance, Z2Is the second branch impedance, Z3Is the third branch impedance, Z4Is the fourth stub impedance; the second branch knot and the sixth branch knot have the same size, and the third branch knot and the fifth branch knot have the same size.
The invention has the advantages that:
(1) the invention realizes the broadband matching of the central signal BGA solder ball connecting structure and the front-end circuit transmission line through the adjusting function of the multistage stepped impedance resonator, and solves the problem of impedance mismatching between the silicon through hole BGA interconnection impedance compensation structure and the front-end circuit signal line in the silicon through hole BGA interconnection impedance compensation structure in the three-dimensional wafer level packaging due to the fact that the bottom of the BGA solder ball is larger than the width of the signal line of the front-end circuit of the microwave dielectric substrate.
(2) By adjusting the size of an annular gap at the bottom of the silicon-based chip, the capacitance between the central signal silicon through hole and the ground is changed, parasitic inductance is compensated, high-frequency parasitic effect caused by a BGA (ball grid array) interconnection structure in three-dimensional wafer-level packaging is eliminated, and impedance matching of the interconnection structure in a packaging system is realized.
(3) In the through-silicon-via BGA interconnection structure, a semicircular gap structure is designed at the bottom of a solder ball and is used for compensating high-frequency parasitic effects brought by TSV and BGA; the diameter of the semicircular gap is the same as the width of the ground plate gap on two sides of the multistage branch matching structure, so that the discontinuity of signal transmission is reduced, the metal through holes are loaded between the metal ground plates on two sides of the multistage branch and the lower-layer ground plate, the signals are bound around the signal lines, and the loss of the signals in the transmission process is reduced.
(4) Compared with the existing quarter-wavelength impedance transformation technology, the structure of the invention reduces the return loss between adjacent branches through the symmetrical ladder-shaped multi-stage impedance transformation branches, realizes the impedance matching effect of a broadband, and simultaneously utilizes the principle of a half-wavelength ladder impedance resonator to enable the multi-stage ladder branches to generate resonance under smaller electrical length by adjusting the impedance ratio between the adjacent branches, thereby greatly shortening the length of the impedance transformation branches.
(5) The millimeter wave broadband matching structure for the ball grid array interconnection in the three-dimensional wafer level packaging, which is designed by the invention, has the advantages that the passband below-20 dB is 29.4GHz-42.5GHz, the insertion loss in the passband is less than 0.5dB, the relative bandwidth of the passband of-20 dB reaches 31.4%, and the electric dimension of the matching structure is 0.09 lambdag×0.5λg. Compared with the traditional through-silicon-via BGA interconnection compensation structure and a matching structure designed based on a multi-stage quarter-wavelength impedance transformation stub structure, the through-silicon-via BGA interconnection compensation structure has the advantages of small size, large relative bandwidth and small insertion loss, and is suitable for a miniaturized and high-performance advanced three-dimensional wafer-level packaging millimeter wave circuit system.
Drawings
FIG. 1 is a perspective view of an embodiment of the present invention;
FIG. 2 is a schematic diagram of a through-silicon via BGA interconnection compensation structure on a microwave dielectric substrate and a ball grid array interconnection broadband matching structure based on a multi-stage ladder resonator according to an embodiment of the present invention;
FIG. 3 is a schematic side view of a through-silicon via BGA interconnect structure in accordance with an embodiment of the present invention;
FIG. 4 is a schematic diagram of an equivalent circuit of a through-silicon-via BGA interconnect structure in accordance with an embodiment of the present invention;
FIG. 5 is a graph showing a comparison of S-parameters of different ladder impedance stub lengths in a ball grid array interconnection broadband matching structure based on a multi-stage ladder resonator according to an embodiment of the present invention;
FIG. 6 is a comparison of S parameters for different BGA pitch sizes in a ball grid array interconnect compensation structure in accordance with an embodiment of the present invention;
FIG. 7 is a graph comparing S-parameters for different circular metal pad diameters in a ball grid array interconnect structure in accordance with an embodiment of the present invention;
FIG. 8 is a comparison of S-parameters for different silicon-based chip bottom ring gap sizes in a through-silicon-via BGA interconnect structure in accordance with an embodiment of the present invention;
FIG. 9 is a graph comparing S-parameters of a through-silicon-via BGA interconnect structure with and without compensation for matching impedance;
FIG. 10 is a graph comparing S-parameters of a one-half wavelength multistage ladder resonator-based ball grid array interconnection broadband matching structure of an embodiment of the invention and a conventional multistage quarter wavelength impedance matching stub-based matching structure.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical scheme of the invention is further described by combining the drawings and specific embodiments in the specification:
example one
As shown in fig. 1 and fig. 2, a millimeter wave broadband matching structure for a ball grid array in a wafer level package includes a silicon-based chip 1, a microwave dielectric substrate 91, metal ground plates 81 located on two sides of an upper surface of the microwave dielectric substrate 91, a lower metal ground plate 82 located on a lower surface of the microwave dielectric substrate 91, a metal via 71 for connecting the metal ground plates 81 located on two sides and the lower metal ground plate 82, a circular metal plate 21 on the upper surface of the microwave dielectric substrate 91, and a semicircular gap 22.
As shown in fig. 2, the upper surface of the microwave dielectric substrate 91 is sequentially connected with a first branch 11 signal line, a second branch 12 signal line, a third branch 13 signal line, a fourth branch 14 signal line, a fifth branch 15 signal line, a sixth branch 16 signal line, a seventh branch 17 signal line, and a front-end circuit transmission line 18 along the positive direction of the x-axis, the first branch 11 signal line, the seventh branch 17 signal line, and the front-end circuit transmission line 18 are all rectangular, and the center line of the y-axis direction is on a straight line. The multi-stage ladder branch section between the first branch section and the seventh branch section reduces return loss between each stage of branch section, and plays a role in broadband matching of a circuit of a BGA interconnected to the front end of the microwave dielectric substrate 901.
The widths of the signal lines from the first branch 11 to the fourth branch 14 are sequentially increased, and the widths of the signal lines from the fourth branch 14 to the seventh branch 17 are sequentially decreased. The change in signal line width achieves a change in stub impedance.
The widths from the center line of the first branch section 12 to the sixth branch section 16 in the y-axis direction to the metal ground plates 81 on both sides are the same, the widths from the center line of the seventh branch section 17 in the y-axis direction to the metal ground plates 81 on both sides are reduced in the positive direction of the x-axis, and the widths from the center line of the front-end circuit transmission line 18 in the y-axis direction to the metal ground plates 81 on both sides are the same.
The microwave dielectric substrate 91 is a Rogers 4350 board, and has a dielectric constant of 3.66, a loss tangent of 0.004 and a thickness of 0.254 mm.
As shown in fig. 1 and fig. 3, the silicon-based chip 1 includes a circuit signal line 61, a central signal through-silicon via 51, a plurality of surrounding ground through-silicon vias 52, BGA pads 19 on the bottom of the silicon-based chip 1, an annular gap 41 on the bottom of the silicon-based chip 1, a central signal BGA solder ball connection structure 31 for connecting the silicon-based chip 1 to the circular metal plate 21, and a plurality of surrounding BGA solder ball connection structures 32 for connecting the silicon-based chip 1 to the metal ground plates 81 on two sides.
Millimeter wave signals are transmitted to the central signal BGA solder ball connecting structure 31 from a circuit signal wire 61 in the silicon-based chip 1 through the central signal silicon through hole 51 and the BGA bonding pad 19, and then transmitted to the front-end circuit transmission line 18 through the circular metal disc 21, the first branch 11, the second branch 12, the third branch 13, the fourth branch 14, the fifth branch 15, the sixth branch 16 and the seventh branch 17 in sequence for output.
As shown in fig. 1, a plurality of surrounding ground through silicon vias 52 inside the silicon-based chip 1 are uniformly and circumferentially arranged around the central signal through silicon via 51 with the central signal through silicon via 51 as a center, for binding signals around the central signal through silicon via 51.
As shown in fig. 1, a plurality of surrounding BGA solder ball connection structures 32 are further included between the silicon-based chip 1 and the microwave dielectric substrate 91, the surrounding BGA solder ball connection structures 32 are centered on the central signal BGA solder ball connection structure 31, and are uniformly arranged around the central signal BGA solder ball connection structure 31 in a U-shape, and the distances between two adjacent surrounding BGA solder ball connection structures 32 are equal, so as to connect the silicon-based chip 1 and the metal ground plates 81 on two sides of the upper surface of the microwave dielectric substrate 91, so as to bind signals around the central signal BGA solder ball connection structure 31.
The functions of the first stub 11 include impedance compensation of the center signal through-silicon-via 51 to the center signal BGA ball bond structure and broadband matching of the center signal BGA ball bond structure 31 to the front-end circuit transmission line 18.
The central signal BGA solder ball connection structure 31 and the surrounding BGA solder ball connection structure 32 both include BGA solder balls 311 and solder 312, and the solder 312 connects two ends of the BGA solder balls 311 with the silicon-based chip 1 and the metal ground plates 81 on two sides respectively.
As shown in fig. 4, in the equivalent circuit of the central signal BGA ball connection structure 31, two common terminals of the inductor L1 and the capacitor C1 connected in parallel are connected, one common terminal is connected to one end Lb, and the other common terminal is grounded; an inductor L2 and a capacitor C2 are connected in parallel, one common end of the two common ends is connected to the other end of the Lb, and the other common end of the two common ends is grounded; lb is the self-inductance of the central signal BGA solder ball connection structure 31, L2 is the self-inductance of the central signal through-silicon via 51 inside the silicon-based chip 1, C2 is the capacitance between the central signal through-silicon via 51 and the surrounding ground through-silicon via 52, L1 is the inductance of the signal line itself on the microwave dielectric substrate 91, and C1 is the capacitance between the GCPW signal line on the microwave dielectric substrate 91 and the surrounding metal ground plate.
As can be seen from fig. 4, in a high frequency condition, the characteristic impedance of the interconnection structure is related to the capacitance and inductance in the structure, and in order to compensate the influence of the interconnection structure on the impedance, the values of L1 and C1 need to be adjusted to keep the impedance of the interconnection structure unchanged, that is, by adding the semicircular gap 22 structure on the microwave dielectric substrate 91 and below the center signal BGA solder ball connection structure 31, the transmission discontinuity caused by the parasitic effect from the center signal tsv 51 to the center signal BGA solder ball connection structure 31 is compensated, and the sizes of the gap between the circular metal plate 21 and the first branch 11 and the two sides thereof are adjusted to make the equivalent circuit of the interconnection structure in a resonance state to realize the compensation effect, thereby realizing the broadband operating range of the interconnection structure.
The circular metal disc 21 is loaded at the end of the first branch 11 in the x-axis negative direction, the gap behind the circular metal disc 21 is a semicircular gap 22, the diameter R3 of the semicircular gap 22 is equal to the width of the gap at two sides of the first branch 11, the semicircular gap 22 is consistent with the width of the metal grounding plate gap at two sides of the branch, the discontinuity of signals in the transmission process is reduced, and a better interconnection transmission effect is realized, and the size calculation formula of the circular metal disc 21 and the semicircular gap 22 is as follows:
R1≈1.5·W (1)
R3≈2.8·R1 (2)
wherein, R1 is the diameter of the round metal disc 21, R3 is the diameter of the semicircular gap 22; w is the width of the signal line of the first branch 11.
The formula for calculating the diameter of the annular gap (41) is as follows:
R2≈0.7·R3 (3)
wherein R2 is the diameter of the annular gap, and R3 is the diameter of the semicircular gap (22).
The structure of the signal line of the second branch 12 and the structure of the signal line of the sixth branch 16 are symmetrical with respect to the center line of the fourth branch 14 in the y-axis direction, and the structure of the signal line of the third branch 13 and the structure of the signal line of the fifth branch 15 are symmetrical with respect to the center line of the fourth branch 14 in the y-axis direction.
The widths (y-axis direction) of the signal lines from the first branch 11 to the fourth branch 14 increase progressively in sequence, and the widths (y-axis direction) of the signal lines from the fourth branch 14 to the seventh branch 17 decrease progressively in sequence.
The widths from the center line of the first branch section 11 to the center line of the sixth branch section 16 in the y-axis direction to the metal grounding plates 81 on the two sides are the same, the widths from the center line of the seventh branch section 17 in the y-axis direction to the metal grounding plates 81 on the two sides are reduced along the positive direction of the x-axis, and the widths from the center line of the front-end circuit transmission line 18 in the y-axis direction to the metal grounding plates 81 on the two sides are the same, so that the discontinuity of millimeter wave signals during transmission from the center signal BGA solder ball connection structure 31 to the microwave medium substrate is reduced. The first branch and the loaded semicircular gap structure outside the circular bonding pad play a role in compensating signal discontinuity brought by a high-frequency parasitic effect from a silicon through hole inside a silicon-based chip to the BGA structure.
The first to seventh branches 11 to 17 and the front-end circuit transmission line 18 are all grounded coplanar waveguide (GCPW) structures.
The metal via holes 71 are uniformly distributed on two sides of the grounded coplanar waveguide structure and are used for binding signals around the branch sections and the front-end circuit transmission line 18, so that a better signal transmission effect is realized.
The size calculation formulas of the signal wires from the first branch node 11 to the seventh branch node 17 are as follows:
2·l1+5·l2≈λg (5)
wherein λ isgIs the wavelength of guided waves in the medium, c is the speed of light in free space, f0Is the frequency of the working center,. epsiloneffIs the effective dielectric constant of the dielectric material, /)1Is the length of the first branch signal line, theta1Is the first branch electricity length,/2The length of the second, third, fourth, fifth and sixth branch signal lines theta2The second, third, fourth, fifth and sixth electricity-saving lengths; z1Is the first branch impedance, Z2Is the second branch impedance, Z3Is the third branch impedance, Z4The first branch node terminal is a fourth branch node impedance and is positioned at the circle center of the circular metal disc; the second branch knot and the sixth branch knot have the same size, and the third branch knot and the fifth branch knot have the same size.
The design of the symmetrical multi-level branches of the first branch 11 to the seventh branch 17 forms a half-wavelength stepped resonator structure, reduces the return loss between each level of branches, plays a role in broadband matching of BGA (ball grid array) interconnection to a front end circuit of a microwave dielectric substrate, and simultaneously utilizes the principle of a stepped impedance resonator to enable the multi-level stepped branches to generate resonance under smaller electrical length by adjusting the impedance ratio between adjacent branches by utilizing the stepped impedance resonator principle, thereby greatly shortening the length of impedance conversion branches and realizing the effect of shortening the length of the stepped matching branches; compared with the broadband transmission realized by the multistage quarter-wavelength impedance stub, the broadband matching structure of the half-wavelength stepped resonator has smaller size, and the problem of overlarge circuit size of a packaging system caused by the adoption of multistage quarter-wavelength lines is solved.
FIG. 5 is a diagram illustrating adjustment of lengths l of branches of a multi-stage stepped impedance resonator in the broadband matching structure2As shown in the figure, according to the theory of half-wavelength ladder resonator, the impedance ratio between the branches is adjusted to shorten the electrical length of each branchAnd keeping the branch knot in a resonance state; the return loss of adjacent branches is reduced by the branches of the multi-stage stepped impedance, and the resonance bandwidth is enlarged.
FIG. 6 is a schematic view showing the adjustment of the distance D between the BGA solder balls1The size of the S parameter is compared with that of the graph, as shown in the figure, as the distance between the BGA welding balls is increased, the equivalent capacitance of the interconnection structure is reduced, and the characteristic impedance of the interconnection structure is changed; and along with the increase of the BGA solder ball spacing, signal transmission leakage in a similar coaxial structure formed by the solder balls at the center of the solder ball array and the solder balls surrounding the ground is increased, the signal transmission effect of the structure is reduced, and the BGA spacing in processing is limited to a fixed value of 0.7mm by the manufacturing process precision.
FIG. 7 is a view showing the adjustment of the diameter R of the circular metal disk1The S parameter comparison chart of the size shows that the integral reactance characteristic of the structure can be obviously changed by adjusting the size of the circular metal disc; the inductance compensation capacitor can be changed by changing the diameter size, so that the structural performance is optimized; the diameter of the circular metal plate is limited by the BGA ball structure, and the diameter of the circular metal plate is larger than the diameter of the bottom surface of the BGA ball.
As shown in fig. 8, in order to adjust the S parameter comparison graph of the diameter R2 of the annular gap, it can be seen that when millimeter wave signals pass through the metal silicon through hole on the transmission line inside the silicon-based chip, the silicon through hole is affected by high frequency signals, which generates parasitic inductance itself, and generates mutual inductance effect with the surrounding grounded metal silicon through hole, so as to eliminate the effect of the parasitic inductance of the silicon through hole on the millimeter wave three-dimensional rf level package performance, the equivalent capacitor C2 in fig. 4 is changed by adjusting the size of the annular gap at the bottom of the silicon-based chip to compensate the parasitic inductance. In order to maintain the transmission performance of the interconnect structure in frequency, it is necessary to maintain a stable impedance of the structure in a frequency band.
Impedance formula for structure at high frequency:
according to the formula (9), in order to eliminate the influence of the extra inductance on the structural impedance, the structural capacitance needs to be reduced to keep the impedance stable and realize a good transmission effect, the size of the annular gap at the bottom of the silicon-based chip is increased, the compensation effect of the flat capacitor between the signal line and the surrounding metal grounding plate is reduced, meanwhile, the size of the compensation capacitance needs to be ensured within a reasonable range, when the compensation capacitance exceeds the parasitic inductance, a new parasitic effect can be caused, so that the transmission performance of the interconnection structure is deteriorated, the size of the annular gap is adjusted, the capacitance compensation inductance can be changed by changing the diameter size, and the integral reactance characteristic of the structure is changed.
As shown in fig. 9, a comparison graph of S parameters of a BGA interconnection structure without a compensation structure and a microwave dielectric substrate structure with a circular metal plate and a semicircular gap compensation structure added on the microwave dielectric substrate according to the structure of the invention is shown, where the addition of the compensation structure improves-20 dB bandwidth of the through-silicon via BGA interconnection, and reduces insertion loss during signal transmission, thereby achieving the effect of matching interconnection impedance.
As shown in FIG. 10, a comparison graph of S parameters of a BGA interconnection broadband matching structure based on a half-wavelength multistage ladder resonator provided by the present invention and a conventional multi-stage quarter-wavelength impedance matching stub matching structure is shown, wherein the size of the broadband matching structure based on a half-wavelength multistage ladder resonator of the present invention is λ g2, the matching structure based on multi-stage quarter-wave impedance matching branch adopts two sections of lambdagA/4 impedance matching branch with the same length of λ g2, keeping the length of the two matching structures the same; as can be seen from fig. 10, the S parameter effect of the broadband matching structure based on the half-wavelength multistage ladder resonator of the present invention has obvious performance advantages compared with the conventional technology, in the conventional technology, more quarter-wavelength impedance matching stubs are required to achieve a wider bandwidth, and the size of the matching structure is further increased.
The millimeter wave broadband matching structure for interconnection of the ball grid arrays in the advanced three-dimensional wafer level packaging and the design method thereof can be used for designing miniaturization and high performanceAnd packaging the broadband matching structure from the chip to the microwave dielectric substrate in the radio frequency system. The broadband matching structure of the multilevel stepped impedance resonator structure from the BGA solder balls to the front end circuit of the microwave dielectric substrate adopts a symmetrical multilevel branch design, and utilizes the principle of the stepped impedance resonator, so that the structure size is shortened while the broadband transmission of the matching structure is realized; a semicircular gap structure is added below a BGA solder ball on a microwave medium substrate 901 to compensate transmission discontinuity caused by a parasitic effect from a silicon through hole to a ball grid array interconnection structure, so that an interconnection structure equivalent circuit is in a resonance state to realize a compensation effect, and a broadband working range of the interconnection structure is realized; the millimeter wave broadband matching structure for the ball grid array interconnection in the dimension wafer level packaging based on the design of the invention has the advantages that the passband below-20 dB is 29.4GHz-42.5GHz, the insertion loss in the passband is less than 0.5dB, the relative bandwidth of the passband of-20 dB reaches 31.4%, and the electric dimension of the matching structure is 0.09 lambdag×0.5λg. Compared with the traditional silicon through hole BGA interconnection compensation structure and a matching structure designed based on a multi-stage quarter-wavelength impedance transformation stub structure, the silicon through hole BGA interconnection compensation structure has the advantages of small size, large relative bandwidth and small insertion loss, and is suitable for a miniaturized and high-performance advanced three-dimensional radio frequency level packaging millimeter wave circuit system.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (7)
1. The millimeter wave broadband matching structure of the ball grid array in the wafer level packaging is characterized by comprising a microwave dielectric substrate (91), wherein the upper surface of the microwave dielectric substrate (91) is sequentially connected with a first branch (11) signal line, a multi-level stepped impedance resonator and a front end circuit transmission line (18) along the positive direction of an x axis; the multistage stepped impedance resonator comprises a second branch (12), a third branch (13), a fourth branch (14), a fifth branch (15), a sixth branch (16) and a seventh branch (17) which are sequentially connected with the upper surface of a microwave dielectric substrate (91) along the positive direction of an x axis, wherein the signal line is in a grounded coplanar waveguide structure; the signal lines from the first branch (11) to the seventh branch (17) are all rectangular, and the central lines of the signal lines in the y-axis direction are on the same straight line; the widths of the signal lines from the first branch (11) to the fourth branch (14) are sequentially increased progressively, and the widths of the signal lines from the fourth branch (14) to the seventh branch (17) are sequentially decreased progressively; the widths from the center line of the first branch (11) to the center line of the sixth branch (16) in the y-axis direction to the metal grounding plates (81) on the two sides are the same, the widths from the center line of the seventh branch (17) in the y-axis direction to the metal grounding plates (81) on the two sides are reduced along the positive direction of the x-axis, and the widths from the center line of the front-end circuit transmission line (18) in the y-axis direction to the metal grounding plates (81) on the two sides are the same; millimeter wave signals are transmitted to the multistage stepped impedance resonator through the first stub (11) signal wire to realize broadband matching, and then transmitted to a front-end circuit transmission line (18) by the multistage stepped impedance resonator to be output;
the millimeter wave broadband matching structure of the ball grid array in the wafer level packaging further comprises a silicon-based chip (1), a central signal BGA solder ball connecting structure (31), a circular metal disc (21), a broadband matching structure, a front-end circuit transmission line (18) and an annular gap (41); the silicon-based chip (1) is connected with the microwave dielectric substrate (91) in a flip-chip mode through a central signal BGA solder ball connecting structure (31); the upper surface of the silicon-based chip (1) comprises a circuit signal line (61) for transmitting millimeter wave signals, the interior of the silicon-based chip (1) comprises a central signal silicon through hole (51) vertically connected with the circuit signal line (61), and the lower surface of the silicon-based chip (1) comprises a circular BGA bonding pad (19) vertically connected with the central signal silicon through hole (51); the annular gap (41) is positioned on the lower surface of the silicon-based chip (1), the outer edge of the annular gap (41) and the circular BGA bonding pad (19) are concentric circles, the diameter of the annular gap is larger than that of the circular BGA bonding pad (19), and the annular gap is used for impedance compensation from the central signal silicon through hole (51) to the central signal BGA solder ball connecting structure (31); millimeter wave signals are transmitted to a central signal BGA solder ball connecting structure (31) from a circuit signal line (61) in a silicon-based chip (1) through a central signal silicon through hole (51) and a BGA bonding pad (19), and then are transmitted to a front-end circuit transmission line (18) to be output through a circular metal disc (21), a first branch (11) signal line and a multi-stage stepped impedance resonator in sequence;
a semicircular gap (22) is etched in the negative direction of the x axis of the circular metal disc (21), and the radius of the edge semicircle of the semicircular gap (22) is the same as the width from the center line of the y axis direction of the first branch (11) to the metal grounding plates (81) on the two sides.
2. The millimeter wave broadband matching structure for the ball grid array in the wafer level package according to claim 1, wherein the microwave dielectric substrate (91) comprises two side metal ground plates (81) on the upper surface, a lower metal ground plate (82) on the lower surface, and metal vias (71) for connecting the two side metal ground plates (81) and the lower metal ground plate (82); the metal through holes (71) are uniformly distributed on two sides of the signal lines from the first branch (11) to the seventh branch (17) and the front-end circuit transmission line (18) and are used for binding signals around the branches and the front-end circuit transmission line (18).
3. The millimeter wave broadband matching structure for the ball grid array in the wafer level package as claimed in claim 1, wherein the silicon-based chip (1) further comprises a plurality of surrounding ground through silicon vias (52), and the surrounding ground through silicon vias (52) are uniformly arranged around the central signal through silicon via (51) with the central signal through silicon via (51) as a center, and are used for binding signals around the central signal through silicon via (51).
4. The millimeter wave broadband matching structure for the ball grid array in the wafer level package as claimed in claim 1, further comprising a plurality of surrounding BGA ball connection structures (32) between the silicon-based chip (1) and the microwave dielectric substrate (91), wherein the surrounding BGA ball connection structures (32) are centered on the central signal BGA ball connection structure (31), and are uniformly arranged around the central signal BGA ball connection structure (31) in a U-shaped loop, and the distance between two adjacent surrounding BGA ball connection structures (32) is equal, so as to connect the silicon-based chip (1) and the metal ground plates (81) on two sides of the upper surface of the microwave dielectric substrate (91) for binding signals around the central signal BGA ball connection structure (31).
5. The millimeter wave broadband matching structure for ball grid arrays in wafer level packages according to claim 1, wherein the size calculation formula of the circular metal plate (21) and the semicircular gap (22) is as follows:
R1≈1.5·W （1）
R3≈2.8·R1（2）
wherein R1 is the diameter of the circular metal disc (21), and R3 is the diameter of the semicircular gap (22); w is the width of the signal line of the first branch (11).
6. The millimeter wave broadband matching structure for the ball grid array in the wafer level package as claimed in claim 1, wherein the diameter of the annular gap (41) is calculated by the following formula:
R2≈0.7·R3（3）
wherein R2 is the diameter of the annular gap, and R3 is the diameter of the semicircular gap (22).
7. The millimeter wave broadband matching structure for the ball grid array in the wafer level package as claimed in claim 1, wherein the first to seventh branches (11) to (17) are symmetric half-wavelength ladder resonator structures.
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| CN115692350B (en) * | 2023-01-03 | 2023-03-21 | 成都天成电科科技有限公司 | Chip packaging structure for inhibiting higher mode |
| CN116419464A (en) * | 2023-06-09 | 2023-07-11 | 安徽农业大学 | Plasma torch device |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006126320A1 (en) * | 2005-03-18 | 2006-11-30 | Kyushu University, National University Corporation | Communication circuit, communication apparatus, impedance matching circuit and impedance matching circuit designing method |
| EP2184803A1 (en) * | 2008-11-07 | 2010-05-12 | Commissariat à l'Energie Atomique | Coplanar differential bi-strip delay line, higher-order differential filter and filtering antenna furnished with such a line |
| CN103367915A (en) * | 2013-07-10 | 2013-10-23 | 上海大学 | High-conversion-efficiency substrate integrated waveguide slot rectification antenna |
| JP2014106699A (en) * | 2012-11-27 | 2014-06-09 | Mitsubishi Electric Corp | Bus system |
| CN105720336A (en) * | 2016-04-08 | 2016-06-29 | 北京航空航天大学 | Resonance suppression structure of broadband near-field magnetic field probe, and construction method of resonance suppression structure |
| JP2017038133A (en) * | 2015-08-07 | 2017-02-16 | 三菱電機株式会社 | Transmission device |
| US9972589B1 (en) * | 2017-03-30 | 2018-05-15 | Intel Corporation | Integrated circuit package substrate with microstrip architecture and electrically grounded surface conductive layer |
| CN109066024A (en) * | 2018-08-13 | 2018-12-21 | 电子科技大学 | A kind of big frequency based on mode composite transmission line compares double-passband filter |
| CN110167261A (en) * | 2019-06-26 | 2019-08-23 | 京信通信技术(广州)有限公司 | Interconnection structure between millimeter wave active antenna element and pcb board |
| WO2020066621A1 (en) * | 2018-09-28 | 2020-04-02 | 株式会社村田製作所 | Bandpass filter, communication device, and resonator |
| CN210328146U (en) * | 2019-06-26 | 2020-04-14 | 京信通信技术(广州)有限公司 | Interconnection structure between millimeter wave active antenna unit and PCB |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4315859B2 (en) * | 2004-05-19 | 2009-08-19 | 富士通株式会社 | Superconducting filter |
-
2020
- 2020-06-19 CN CN202010564256.0A patent/CN111696959B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006126320A1 (en) * | 2005-03-18 | 2006-11-30 | Kyushu University, National University Corporation | Communication circuit, communication apparatus, impedance matching circuit and impedance matching circuit designing method |
| EP2184803A1 (en) * | 2008-11-07 | 2010-05-12 | Commissariat à l'Energie Atomique | Coplanar differential bi-strip delay line, higher-order differential filter and filtering antenna furnished with such a line |
| JP2014106699A (en) * | 2012-11-27 | 2014-06-09 | Mitsubishi Electric Corp | Bus system |
| CN103367915A (en) * | 2013-07-10 | 2013-10-23 | 上海大学 | High-conversion-efficiency substrate integrated waveguide slot rectification antenna |
| JP2017038133A (en) * | 2015-08-07 | 2017-02-16 | 三菱電機株式会社 | Transmission device |
| CN105720336A (en) * | 2016-04-08 | 2016-06-29 | 北京航空航天大学 | Resonance suppression structure of broadband near-field magnetic field probe, and construction method of resonance suppression structure |
| US9972589B1 (en) * | 2017-03-30 | 2018-05-15 | Intel Corporation | Integrated circuit package substrate with microstrip architecture and electrically grounded surface conductive layer |
| CN109066024A (en) * | 2018-08-13 | 2018-12-21 | 电子科技大学 | A kind of big frequency based on mode composite transmission line compares double-passband filter |
| WO2020066621A1 (en) * | 2018-09-28 | 2020-04-02 | 株式会社村田製作所 | Bandpass filter, communication device, and resonator |
| CN110167261A (en) * | 2019-06-26 | 2019-08-23 | 京信通信技术(广州)有限公司 | Interconnection structure between millimeter wave active antenna element and pcb board |
| CN210328146U (en) * | 2019-06-26 | 2020-04-14 | 京信通信技术(广州)有限公司 | Interconnection structure between millimeter wave active antenna unit and PCB |
Non-Patent Citations (2)
| Title |
|---|
| Novel design for coplanar waveguide to microstrip transition;A.M.E. Safwata; K.A. Zaki; W. Johnson; C.H. Lee;《 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)》;20020806;全文 * |
| Sebasti＇an Ochoa，et..New Design of T-type Power Divider Network in.《2017 IEEE URUCON》.2017,第1-4页. * |
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