CN116419464A - Plasma torch device - Google Patents

Plasma torch device Download PDF

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Publication number
CN116419464A
CN116419464A CN202310680941.3A CN202310680941A CN116419464A CN 116419464 A CN116419464 A CN 116419464A CN 202310680941 A CN202310680941 A CN 202310680941A CN 116419464 A CN116419464 A CN 116419464A
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CN
China
Prior art keywords
microwave
impedance matching
resonant cavity
matching device
inner conductor
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Pending
Application number
CN202310680941.3A
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Chinese (zh)
Inventor
王瑶瑶
刘成周
赵一舟
何杨
马文东
朱梁
单家芳
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Anhui Agricultural University AHAU
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Anhui Agricultural University AHAU
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Priority to CN202310680941.3A priority Critical patent/CN116419464A/en
Publication of CN116419464A publication Critical patent/CN116419464A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461Microwave discharges

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)

Abstract

The application discloses a plasma torch device relates to plasma technical field, can solve the great problem of device size that improves plasma, can improve plasma device's portability. The plasma torch apparatus includes: the microwave connector is connected with the solid-state microwave source and is used for receiving microwave signals generated by the solid-state microwave source; the impedance matching device is connected with the microwave connector and is used for carrying out impedance matching treatment on the microwave signals and obtaining first microwave signals; the resonant cavity is connected with the impedance matching device and is used for carrying out frequency modulation and resonance treatment on the first microwave signal and obtaining a second microwave signal; the resonant cavity is provided with an inflation inlet which is used for inflating gas to be ionized; the resonant cavity is also connected with a discharge port, and a second microwave signal acts on the gas to be ionized and generates a plasma torch at the discharge port.

Description

Plasma torch device
Technical Field
The application relates to the technical field of plasmas, in particular to a plasma torch device.
Background
The low-temperature plasma technology has wide application prospect in biomedicine, functional material preparation, pollutant treatment and other aspects. The microwave plasma is used as a typical low-temperature plasma technology, and has the characteristics of electrodeless discharge, centralized discharge area, stable discharge and the like, so that the microwave plasma has wide application in the field of industrial application, in particular to the preparation of functional materials.
The generation principle of microwave plasma is to utilize a microwave device to inject microwave energy into gas molecules to induce the gas molecules to generate a series of reactions such as excitation, ionization and the like, so as to generate high-reactivity plasma. The microwave plasma has wide application in medicine, material treatment, etc. due to its high active particle density, high capacity and low temperature. However, the conventional apparatus for generating microwave plasma is large in size and not easy to carry.
Disclosure of Invention
The embodiment of the application provides a plasma torch device, which can solve the problem of larger size of a device for improving plasma and can improve the portability of the plasma device.
In order to achieve the above purpose, the present application adopts the following technical scheme:
embodiments of the present application provide a plasma torch apparatus comprising:
the microwave connector is connected with the solid-state microwave source and is used for receiving microwave signals generated by the solid-state microwave source;
the impedance matching device is connected with the microwave connector and is used for carrying out impedance matching treatment on the microwave signals and obtaining first microwave signals;
the resonant cavity is connected with the impedance matching device and is used for carrying out frequency modulation and resonance treatment on the first microwave signal and obtaining a second microwave signal;
the resonant cavity is provided with an inflation inlet which is used for inflating gas to be ionized;
the resonant cavity is also connected with a discharge port, and a second microwave signal acts on the gas to be ionized and generates a plasma torch at the discharge port.
In one embodiment, the microwave connector, the impedance matching device, the resonant cavity, and the discharge port are disposed along the same central axis.
In one embodiment, the resonant cavity comprises: a frequency modulation assembly and a resonance assembly;
the frequency modulation component is connected with the impedance matching device, the resonance component is connected with the discharge port, and the frequency modulation component and the resonance component are arranged along the central axis.
In one embodiment, the resonant assembly comprises a resonant component and a dielectric layer, wherein the resonant component is positioned between the impedance matching device and the dielectric layer, and the resonant component and the dielectric layer are arranged along a central axis;
the dielectric layer is made of high temperature resistant material.
In one embodiment, the cavity is fabricated based on the three-quarter wavelength cavity principle.
In one embodiment, the impedance matching device is prepared based on microwave theory, and the impedance matching device is a multi-junction impedance matching device.
In one embodiment, the microwave connector comprises an inner conductor and an outer conductor sleeved on the periphery of the inner conductor, wherein the inner conductor and the outer conductor are arranged along a central axis;
the impedance matching device, the resonant cavity and the discharge port are sequentially sleeved on the inner conductor.
In one embodiment, the dielectric layer also serves to secure the inner conductor.
In one embodiment, the characteristic impedance of the microwave connector matches the characteristic impedance of the microwave connector.
In one embodiment, the diameter of the inner conductor is 1-mm mm to 2mm, and the length of the inner conductor is 13-15 mm.
The beneficial effects that technical scheme that this application embodiment provided include at least:
the embodiment of the application provides a plasma torch device, including: the microwave connector is connected with the solid-state microwave source and is used for receiving microwave signals generated by the solid-state microwave source; the impedance matching device is connected with the microwave connector and is used for carrying out impedance matching treatment on the microwave signals and obtaining first microwave signals; the resonant cavity is connected with the impedance matching device and is used for carrying out frequency modulation and resonance treatment on the first microwave signal and obtaining a second microwave signal; the resonant cavity is provided with an inflation inlet which is used for inflating gas to be ionized; the resonant cavity is also connected with a discharge port, and a second microwave signal acts on the gas to be ionized and generates a plasma torch at the discharge port. The plasma torch device provided by the embodiment of the application is a novel discharge device which is simple in feed, low in reflection and transmission coefficient, capable of generating stable plasma jet, mainly matched with a solid-state microwave source, simple in structure, small in size, good in portability, and capable of being applied to the portable technical field, such as medical treatment of wounds, surface modification in the material field and the like.
Drawings
Fig. 1 is a schematic structural diagram of a plasma torch apparatus according to an embodiment of the present disclosure;
fig. 2 is a reflection coefficient diagram of a plasma torch apparatus according to an embodiment of the present application.
Legend description: 1. a microwave connector; 2. an impedance matching device; 3. a resonant cavity; 4. an inflation inlet; 5. a discharge port; 6. an inner conductor; 7. an outer conductor; 8. a frequency modulation component; 9. a resonance member; 10. a dielectric layer.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
The terms "first" and "second" are used below for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the embodiments of the present disclosure, unless otherwise indicated, the meaning of "a plurality" is two or more.
It should be noted that, the positional or positional relationship indicated by the terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the positional or positional relationship shown in the drawings, and are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application; furthermore, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
Fig. 1 is a schematic diagram of a plasma torch apparatus according to an embodiment of the present application, as shown in fig. 1, the apparatus includes:
the microwave connector 1 is connected with the solid-state microwave source and is used for receiving microwave signals generated by the solid-state microwave source;
the impedance matching device 2 is connected with the microwave connector 1 and is used for carrying out impedance matching processing on the microwave signals and obtaining first microwave signals;
the resonant cavity 3 can be modulated, and the resonant cavity 3 is connected with the impedance matching device 2 and is used for modulating and resonating the first microwave signal and obtaining a second microwave signal;
the resonant cavity 3 is provided with an inflation inlet 4, and the inflation inlet 4 is used for inflating gas to be ionized;
the resonant cavity 3 is also connected to a discharge port 5, and a second microwave signal acts on the gas to be ionized and generates a plasma torch at the discharge port 5.
Optionally, the microwave connector 1, the impedance matching device 2, the resonant cavity 3 and the discharge port 5 are arranged along the same central axis.
It will be appreciated that the plasma torch apparatus provided by the embodiments of the present application is a metal antenna with simple feed, low reflection and transmission coefficient, and uniform radiation, the reflection coefficient of the antenna is less than-10 dB at 915 MHz, and about 95% of the microwave energy is radiated into the atmosphere to form an atmospheric pressure microwave plasma. Simple structure, smaller volume and better portability, and can be applied to the portable technical field, such as medical treatment of wounds, surface modification in the material field, and the like.
It should be noted that, as shown in fig. 2, the reflection coefficient diagram of the plasma device provided in the embodiment of the present application is shown, where the abscissa in fig. 2 represents the frequency of the microwave signal, and the ordinate in fig. 2 represents the reflection coefficient of the microwave signal, where the central operating frequency of the device may be 2.45 GHz, where the central operating frequency may slightly differ according to different processing material choices of the device, but the device provided in the embodiment of the present application may be designed to operate in other frequency bands according to the microwave theory improvement, and the operating frequency range of the device provided in the embodiment of the present application may be 0-1 THz.
The microwave connector 1 may be an SMA connector, which is a typical microwave high-frequency connector, and the SMA connector is connected to a solid-state microwave source, and is used for accessing a microwave signal generated by the solid-state microwave source. The SMA joint may have a characteristic impedance of 50Ω. The characteristic impedance of the microwave connector 1 matches the characteristic impedance of the microwave connector 1.
Optionally, the microwave connector 1 includes an inner conductor 6 and an outer conductor 7 sleeved on the periphery of the inner conductor 6, where the inner conductor 6 and the outer conductor 7 are disposed along a central axis; the impedance matching device 2, the resonant cavity 3 and the discharge port 5 are sequentially sleeved on the inner conductor 6.
The inner conductor 6 may have a cylindrical shape, the outer conductor 7 may have a cylindrical shape, a rectangular shape, or the like, which is not particularly limited in the implementation of the present application, the diameter of the inner conductor 6 may be 1 mm to 2mm, and the length of the inner conductor 6 may be 13 to 15mm. The dimensions of the embodiments of the present application are not particularly limited.
The impedance matching device 2 is prepared based on microwave theory, and the impedance matching device 2 is a multi-junction impedance matching device 2, and the bandwidth of the impedance matching device 2 is expanded under the condition of ensuring the minimum power reflection coefficient, so that the energy loss can be reduced.
The resonant cavity 3 includes: a frequency modulation component 8 and a resonance component; the frequency modulation component 8 is connected with the impedance matching device 2, the resonance component is connected with the discharge port 5, and the frequency modulation component 8 and the resonance component are arranged along a central axis.
The design of the frequency modulation assembly 8 includes, but is not limited to, all possible shapes such as a cylinder, a rectangle, etc., with a radius of 4 mm and a length of about 65mm, and the size of the embodiment is not particularly limited.
Optionally, the resonant assembly includes a resonant component 9 and a dielectric layer 10, the resonant component 9 is located between the impedance matching device 2 and the dielectric layer 10, and the resonant component 9 and the dielectric layer 10 are disposed along a central axis; the dielectric layer 10 is made of high temperature resistant material. The dielectric layer 10 also serves to fix the inner conductor 6.
Alternatively, the cavity 3 is prepared based on the three-quarter wavelength cavity 3 principle. The resonant cavity 3 provided by the embodiment of the application can generate high field intensity so as to break down gas to form a plasma torch, and the frequency of the resonant cavity 3 can be 915GHz or 2.45 GHz according to the theory of the relation between the wavelength and the size of microwaves, or the corresponding frequency can be adjusted according to application scenes.
Wherein the resonating component is an improved coaxial resonating antenna. The purpose of the dielectric layer 10 is to secure the inner conductor 6 and the outer conductor 7 and to act as a fire protection, and the dielectric layer 10 is made of materials including, but not limited to, all possible materials such as Teflon, ceramic, peek, rooger, etc.
The gas charging port 4 includes, but is not limited to, all possible configurations of circular, cylindrical, rectangular, etc., and the gas charging port 4 is for supplying a gas for generating plasma, such as argon, helium, etc.
The discharge port 5 includes, but is not limited to, all possible configurations of a circular truncated cone shape, a cylindrical shape, a rectangular shape, etc., which is a shape of a circular truncated cone for a wide range of envelope gases to generate a wide range of high density plasma.
The plasma torch device provided by the embodiment of the application is a metal antenna which is simple in feed, low in reflection and transmission coefficient and uniform in radiation, the reflection coefficient of the antenna at 915 MHz is smaller than-10 dB, and about 95% of microwave energy is radiated into the atmosphere to form atmospheric pressure microwave plasma. Simple structure, smaller volume and better portability, and can be applied to the portable technical field, such as medical treatment of wounds, surface modification in the material field, and the like.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples represent only a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the invention. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.

Claims (10)

1. A plasma torch apparatus, the apparatus comprising:
the microwave connector is connected with the solid-state microwave source and is used for receiving microwave signals generated by the solid-state microwave source;
the impedance matching device is connected with the microwave connector and is used for carrying out impedance matching processing on the microwave signals and obtaining first microwave signals;
the resonant cavity is connected with the impedance matching device and is used for carrying out frequency modulation and resonance treatment on the first microwave signal and obtaining a second microwave signal;
the resonant cavity is provided with an inflation inlet which is used for inflating gas to be ionized;
the resonant cavity is also connected with a discharge port, and the second microwave signal acts on the gas to be ionized and generates a plasma torch at the discharge port.
2. The apparatus of claim 1, wherein the microwave connector, the impedance matching device, the resonant cavity, and the discharge port are disposed along a same central axis.
3. The apparatus of claim 2, wherein the resonant cavity comprises: a frequency modulation assembly and a resonance assembly;
the frequency modulation assembly is connected with the impedance matching device, the resonance assembly is connected with the discharge port, and the frequency modulation assembly and the resonance assembly are arranged along the central shaft.
4. A device according to claim 3, wherein the resonant assembly includes a resonant member and a dielectric layer, the resonant member being located between the impedance matching device and the dielectric layer, the resonant member and the dielectric layer being disposed along the central axis;
the dielectric layer is made of high-temperature resistant materials.
5. The device of claim 1, wherein the resonant cavity is fabricated based on the three-quarter wavelength resonant cavity principle.
6. The device of claim 1, wherein the impedance matching device is prepared based on microwave theory and the impedance matching device is a multi-junction impedance matching device.
7. The apparatus of claim 4, wherein the microwave connector comprises an inner conductor and an outer conductor sleeved around the inner conductor, the inner conductor and the outer conductor being disposed along the central axis;
the impedance matching device, the resonant cavity and the discharge port are sequentially sleeved on the inner conductor.
8. The apparatus of claim 7, wherein the dielectric layer is further configured to secure the inner conductor.
9. The apparatus of claim 1, wherein a characteristic impedance of the microwave connector matches a characteristic impedance of the microwave connector.
10. The device of claim 7, wherein the diameter of the inner conductor is 1-mm mm and the length of the inner conductor is 13-15 mm.
CN202310680941.3A 2023-06-09 2023-06-09 Plasma torch device Pending CN116419464A (en)

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CN202310680941.3A CN116419464A (en) 2023-06-09 2023-06-09 Plasma torch device

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Application Number Priority Date Filing Date Title
CN202310680941.3A CN116419464A (en) 2023-06-09 2023-06-09 Plasma torch device

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Application publication date: 20230711