CN109195299B - Cylindrical surface wave plasma generating device - Google Patents
Cylindrical surface wave plasma generating device Download PDFInfo
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- CN109195299B CN109195299B CN201811287082.7A CN201811287082A CN109195299B CN 109195299 B CN109195299 B CN 109195299B CN 201811287082 A CN201811287082 A CN 201811287082A CN 109195299 B CN109195299 B CN 109195299B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
- H05H1/4615—Microwave discharges using surface waves
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/461—Microwave discharges
- H05H1/4622—Microwave discharges using waveguides
Abstract
The invention relates to a cylindrical surface wave plasma generating device which comprises a high-frequency power supply (1), an impedance adjusting unit (2), an energy transmission waveguide (3), a waveguide converter (4) and a cylindrical slotted waveguide (5) which are sequentially connected, wherein a dielectric tube (6) is nested on the outer wall of the cylindrical slotted waveguide (5), a plurality of slits are formed in the cylindrical slotted waveguide (5), microwaves form a conduction current on the inner wall surface of the cylindrical slotted waveguide (5), the conduction current is cut off by the slits at the slits and passes through the slits in the form of displacement current, and an electric field formed by the displacement current at the slits is radiated into the direction of the dielectric tube (6) to ionize working gas near the dielectric tube and generate plasma around the outer wall of the dielectric tube (6). Compared with the prior art, the method has the advantages that the generated high-density plasma is more uniform and stable, the number of activated groups is more, and the like.
Description
Technical Field
The invention relates to the field of microwave technology and antenna design, in particular to a cylindrical surface wave plasma generating device.
Background
As a "fourth state of matter", plasma is widely used in modern industries, such as preparation of carbon nanotubes, processing of semiconductors, surface modification of materials, etc., so that researchers at home and abroad attract great attention in research on plasma sources.
Whether planar or cylindrical, the size of the surface wave plasma is related to the size of the dielectric tube, which in turn is related to the size of the waveguide, which often determines the mode of transmission. Many propagation modes exist in the circular waveguide, polarization degeneracy is easy to occur, single-mode transmission is difficult to realize, and generated plasmas are not uniform and stable enough.
Patent CN201410489693.5 discloses a surface wave plasma device, which comprises a microwave generating device, a microwave transmitting device and a reaction chamber connected in sequence, wherein the microwave generating device is used for generating microwaves for forming surface wave plasma; the microwave transmission device comprises a waveguide and a slit antenna, wherein the slit antenna is divided into a plurality of sub-antennas, each sub-antenna corresponds to different regions of the reaction chamber, the number and the distance of the sub-antennas are determined by the wavelength of the relevant waveguide, and the microwaves generated by the microwave generation device are coupled to different regions of the reaction chamber through the waveguides and the sub-antennas corresponding to the relevant waveguides. The invention adopts the coupling technology of the waveguide and the antenna, but the technology has the defects of large loss in the coupling process, possibility of intermittent unstable state and complicated structure.
Disclosure of Invention
The mode in the rectangular waveguide has the characteristics of simple and stable field structure, wide frequency band, small loss and the like, and the field distribution in the circular waveguide is very similar to the field distribution of the mode in the rectangular waveguide, so the method can directly perform slotting design on the circular waveguide on the basis of a square-circular waveguide converter, and realize the transition from the mode in the rectangular waveguide to the mode in the circular waveguide in engineering so as to ensure that the density of the generated cylindrical surface wave plasma is higher and more uniform. At the same time, the structure of the present invention enables uniform plasma processing of the inner surface of a cylindrical object, which is not possible with planar structured sources.
The purpose of the invention can be realized by the following technical scheme:
a cylindrical surface wave plasma generating device comprises a high-frequency power supply, an impedance adjusting unit, an energy transmission waveguide, a waveguide converter and a cylindrical slotted waveguide which are sequentially connected, wherein a dielectric tube is nested on the outer wall of the cylindrical slotted waveguide, a reaction cavity is sleeved on the periphery of the dielectric tube, a vacuum cavity is formed between the outer wall of the dielectric tube and the inner wall of the reaction cavity, a plurality of slits are formed in the cylindrical slotted waveguide, the high-frequency power supply outputs microwaves to the impedance adjusting unit, the impedance adjusting unit adjusts the power of the microwaves, the impedance adjusting unit couples the adjusted microwaves into the energy transmission waveguide, the microwaves are transmitted to the waveguide converter through the energy transmission waveguide and are further transmitted into the cylindrical slotted waveguide, the microwaves generate surface currents on the wall surface of the cylindrical slotted waveguide, and the surface currents pass through the slits in the form of displacement currents at the slits, the electric field formed by the displacement current at the slit ionizes the working gas around the dielectric tube and generates plasma around the outer wall of the dielectric tube, and when the plasma density is high enough, the microwave on the cylindrical slotted waveguide is conducted along the surface of the dielectric tube in the form of surface wave, so that uniform surface wave plasma is formed on the outer wall of the dielectric tube. Wherein the working gas is air.
Furthermore, the frequency of the high-frequency power supply is in a microwave band, namely 300 MHz-3 THz, and 2.45GHz or 915MHz is generally used for commercial use at present.
Further, the energy transmission waveguide may be one or more of a rectangular waveguide, a cylindrical waveguide, or a coaxial waveguide.
Further, the energy transmission waveguide may be a rectangular waveguide.
The impedance adjusting unit is an impedance matcher corresponding to the waveguide form of the energy transmission waveguide.
The waveguide converter is a structure for converting a waveguide into a circular slotted waveguide according to the use of a waveguide structure, and is used for converting a main mode of an energy transmission waveguide into TE of the cylindrical slotted waveguide11And (5) a main mold.
Further, the waveguide converter comprises a transmission section, a transition section and a realization section in sequence, wherein the transmission section is connected with the energy transmission waveguide, the sections of the transmission section and the energy transmission waveguide are the same, the waveguide type of the transmission section is the same as that of the energy transmission waveguide, the realization section is connected with the cylindrical slotted waveguide, the sections of the realization section and the cylindrical slotted waveguide are the same, the realization section is a circular waveguide with the same section as that of the cylindrical slotted waveguide, and the transition section is a waveguide with gradually changed section, which is gradually changed from the same section as that of the energy transmission waveguide to the same circular waveguide section as that of the realization section.
Further, the slit is a notch formed in the wall surface of the cylindrical slotted waveguide, and the notch perpendicularly cuts the surface current on the wall surface of the cylindrical slotted waveguide.
Further, the slits are rectangular slits, the short sides of the rectangular slits are parallel to the axial direction of the cylindrical slotted waveguide, and the center distance between any two adjacent slits perpendicular to the radial direction of the waveguide is the waveguide wavelength of half of the cylindrical slotted waveguide. The edge distance of the slits in the radial direction of any two adjacent parallel waveguides is obtained by comprehensively considering the inner section diameter of the circular waveguide, the length of the slits and the number of turns.
The medium tube is made of one of quartz glass, park glass or alumina ceramics, and has the functions of forming a surface wave interface and installing vacuum seal at the joint with the wall of the reaction chamber.
The right wall of the reaction cavity is provided with a circular groove with the diameter of 2r, and the groove on the wall of the reaction cavity can be used for fixing the bottom of the medium pipe according to the requirement of practical application. The pipe orifice of the medium pipe is seamlessly inserted into a slot between two ends of a round hole of the cavity wall, meanwhile, the joint of the medium pipe and the reaction cavity needs to be vacuum-sealed by using a related structure, the pipe bottom can vertically extend to the groove at the right wall of the cavity wall to be fixed and can also be suspended, and the length of the pipe bottom is changed according to actual needs.
A method for plasma modification of material surface by cylindrical surface wave plasma generator includes setting material carrying plate in vacuum cavity between external wall of medium tube and internal wall of reaction cavity, fixing material to be modified on material carrying plate, vacuumizing reaction cavity, turning on high-frequency power supply and regulating output power by impedance regulation unit to generate surface wave plasma on external wall of medium tube for diffusing to material to be modified.
Compared with the prior art, the invention has the advantages of convenient use, relatively simple equipment structure, low expenditure, stable performance, adjustable parameters, strong environmental adaptability and considerable size of the generated plasma, and has various practical applications, such as plasma sterilization, carbon nanotube preparation, surface modification of high polymer and the like.
Based on the coordination of the selection of the waveguide size, the conversion of the transmission mode and the slot design of the slot antenna, the invention solves the problems of uneven and unstable surface wave discharge, insufficient density and the like caused by multimode transmission and mode polarization degeneracy in the existing cylindrical waveguide. The invention has the following beneficial effects:
(1) the surface wave plasma can realize electrodeless discharge in a generating mode without a magnetic field, the equipment structure is relatively simple, the generated plasma is purer, and the number of activated groups is much higher than that of the radio frequency plasma.
(2) The transition from the main mode in the transmission waveguide to the main mode in the cylindrical waveguide is easily achieved in engineering by the choice of the appearance, model and dimensions of the transmission waveguide, the waveguide transformer, the cylindrical waveguide. On the premise of ensuring that the main mode of the transmission waveguide is single-mode transmission, the main mode of the cylindrical slotted waveguide can also be ensured to be single-mode transmission, so that the surface wave plasma generated by discharging on the surface of the cylindrical slotted waveguide is ensured to be more uniform and more stable.
(3) By slotting the cylindrical waveguide wall, the coupled slit antenna array can easily generate and maintain stable and uniform surface wave plasma above the critical density. At the same time, the structure enables uniform plasma processing of the inner surface of a cylindrical object, which is not possible with planar structured sources.
Drawings
FIG. 1 is a schematic view of the overall structure of a plasma generator according to the present invention;
FIG. 2 is a schematic structural diagram of a preferred rectangular waveguide sizing design according to the present invention;
FIG. 3 is an overall schematic diagram of the structural design of the preferred square-round waveguide converter of the present invention;
FIG. 4 is a schematic cross-sectional view of a preferred square-round waveguide converter design according to the present invention;
FIG. 5 is a schematic structural diagram of the design of surface grooving for the circular waveguide according to the present invention.
In the figure: 1. the device comprises a high-frequency power supply, 2, an impedance adjusting unit, 3, an energy transmission waveguide, 4, a waveguide converter, 5, a cylindrical slotted waveguide, 6, a dielectric tube, 10, a reaction cavity, 12, a quartz observation window, 13, a material substrate, 14 and a three-pin matcher.
Detailed Description
The invention is described in detail below with reference to the figures and specific embodiments.
The cylindrical surface wave plasma generating device comprises a high-frequency power supply 1, an impedance adjusting unit 2, an energy transmission waveguide 3, a waveguide converter 4 and a cylindrical slotted waveguide 5 which are sequentially connected, referring to fig. 1, a dielectric tube 6 is nested on the outer wall of the cylindrical slotted waveguide 5, and the dielectric tube 6 is made of one of quartz glass, park glass or alumina ceramic. The periphery of the medium tube 6 is sleeved with a reaction cavity 10, a vacuum cavity is formed between the outer wall of the medium tube 6 and the inner wall of the reaction cavity 10, and a plurality of slits are formed in the cylindrical slotted waveguide 5.
The high frequency power source is preferably a 2.45GHz microwave source, and the 2.45GHz parameters are taken as examples in the following, and if other frequencies such as 915MHz are used, the sizes of the corresponding components need to be adjusted according to the frequencies. For a 2.45GHz microwave source, the operating wavelength is about 0.12245m, as known from the speed of light and the operating frequency. The microwave energy is coupled into the energy transmission waveguide by adjusting the three-pin matcher on the impedance adjusting unit.
The energy transmission waveguide 3 is preferably a rectangular waveguide. Since attenuation of the waveguide depends on the material, a non-ferromagnetic material having high conductivity is preferable to minimize the surface resistance of the conductor. Referring to FIG. 2, attenuation can be reduced by increasing the height b of the narrow side of the waveguide, but the frequency band for single mode operation is narrowed when b > a/2. Therefore, when the required power is transmitted, the power capacity is increased by properly increasing the height b of the narrow side of the waveguide in order to ensure that the waveguide does not break down. In view of the above, the rectangular waveguide preferably has a size of a 86.4mm ≈ 0.7 λ and b ≈ a/2 ≈ 43.2mm, although there are many modes of waves in the rectangular waveguide, and in this case, the rectangular waveguide TE is10Cutoff wavelength λ of modec0.1728m and max { a,2b } < lambda < 2a is satisfied, so only TE is transmitted in the rectangular waveguide10A mode wave.
The waveguide converter 4 is preferably a square-circular waveguide converter for converting TE of the rectangular waveguide 310TE conversion of the master mode into a cylindrical slotted waveguide 511And (5) a main mold. The square-circular waveguide converter comprises a rectangular section, a transition section and a circular section in turn, referring to fig. 3, the rectangular section is connected with the energy transmission waveguide 3 and has the same cross section, the circular section is connected with the cylindrical slotted waveguide 5 and has the same cross section, because of the TE in the circular waveguide11Mode field distribution and TE of rectangular waveguide10The field distribution of the modes is very similar. Based on the converter, TE in the rectangular waveguide is easily realized in engineering10TE transition of main mode into circular waveguide11And the main mold ensures that the generated cylindrical surface wave plasma has higher density, more uniformity and more stability. By combining simulation, the relationship of the variation of the emission coefficient of the square-circle waveguide converter 4 along with the opening angle of the transition section is analyzed, and the axial length L of the waveguide converter is found to be not suitable to be too long and the converter performance is better according to the principle that the emission coefficient is smaller according to the practical application convenience, see fig. 4. After comprehensive consideration, the emission coefficient is preferably selected
The corresponding L is then 95.5 mm. When L is (85.5-100.5) mm, it happens that when L is 95.5mm, the reflection coefficient takes a minimum value and the performance of the converter is optimal, when d is 8.5mm accordingly, again in combination with the analysis of the simulation relationship that the emission coefficient of the converter varies with the axial length L. For practical application, the length of the straight circular waveguide section needs to be properly adjusted to ensure that the electric field polarization direction of the mouth surface of the circular waveguide is vertical. After continuous adjustment, it is found that when d is 8.5mm, the electric field polarization direction of the circular waveguide aperture surface is vertical. The design of the square-round waveguide converter can better realize TE in the rectangular waveguide10TE in circular waveguide of wave direction of mode11Wave transitions of the modes.
The medium pipe is cylindrical, the pipe diameter is 2r, the medium pipe is externally embedded in the circular waveguide, the pipe wall thickness is about 10mm, the material is one of quartz glass, park Las glass or alumina ceramics, the pipe orifice of the medium pipe is seamlessly inserted into a slot between two ends of a round hole of the cavity wall, the joint of the medium pipe and the reaction cavity 10 needs to be vacuum-sealed by using a related structure, the pipe bottom can be vertically extended to a groove at the right wall of the cavity wall to be fixed or suspended, and the length of the medium pipe can be adjusted according to actual needs.
The cylindrical slotted waveguide 5 has an inner cross-sectional diameter of 83.62mm and an outer cross-sectional diameter of 90.20 mm. TE11Cutoff wavelength λ of modec0.1425721m, and the operating wavelength satisfies 2.62r < lambda < 3.14r, therefore only TE can be transmitted in the circular waveguide 511A wave of modes.
According to the surface current distribution of the circular waveguide 5, the slotting position can be considered, the principle is that wall current around the slit is forced to go around by cutting off surface current lines, most of the wall current passes through the slit in the form of displacement current, and according to the principle of waveguide wall slotting, the electric field intensity generated by slotting the slit antenna along the field intensity direction at the position with the maximum electric field intensity is larger, and the electric field intensity radiated by the slit antenna is larger, so that the working gas is easier to break down to generate plasma. The waveguide wavelength of the circular waveguide is
Therefore, the slits are distributed in parallel with 4 circles along the outer wall of the cylindrical slotted waveguide 5, each circle is provided with 5 slits, each slit is a rectangular slit, the length of the long side of each slit is 40mm, the length of the short side of each slit is 10mm, the short side of each slit is parallel to the axial direction of the cylindrical slotted waveguide 5, referring to fig. 5, the central distance d between any two adjacent slits perpendicular to the radial direction of the waveguide is equal to lambdag119.5mm, and the edge distance d between any two adjacent parallel waveguides in the radial direction is (83.62 pi-40 × 5)/5 is 12.51 mm.
During specific work, the high-frequency power supply 1 outputs microwaves to the impedance adjusting unit 2, the impedance adjusting unit 2 adjusts the power of the microwaves, the impedance adjusting unit 2 couples the adjusted microwaves into the energy transmission waveguide 3, the microwaves are transmitted to the waveguide converter 4 through the energy transmission waveguide 3 and further transmitted into the cylindrical slotted waveguide 5, the microwaves generate conduction currents on the wall surface of the cylindrical slotted waveguide 5, the conduction currents pass through the slots in the form of displacement currents at the slots, electric fields formed by the displacement currents at the slots enable working gas near the dielectric tube to be ionized, and plasma is generated around the outer wall of the dielectric tube 6. When the plasma density is high enough, the microwave will propagate along the surface of the medium in the form of a surface wave, thereby forming a uniform surface wave plasma outside the entire pipe wall.
When the material is modified, the reaction chamber 10 may preferably be rectangular, as shown in fig. 1, the material is stainless steel, a circular hole with a diameter of 93.62mm is formed in the center of the left wall of the reaction chamber, a circular groove with a diameter of 2r is formed in the right wall of the reaction chamber, and the groove in the wall of the reaction chamber may be used to fix the bottom of the medium pipe according to the specific requirements of practical application. The upper wall is provided with a quartz observation window for observing the surface wave discharge phenomenon and adjusting the discharge state in real time. A material carrying plate 13 is arranged in a vacuum cavity between the outer wall of the medium tube 6 and the inner wall of the reaction cavity 10, a material to be modified is fixed on the material carrying plate 13, the reaction cavity 10 is vacuumized, the high-frequency power supply 1 is started, the output power is adjusted through the impedance adjusting unit 2, and plasma generated on the outer wall of the medium tube 6 is diffused to the material to be modified. The material surface on the material substrate is effectively modified by the high-density uniform stable cylindrical surface wave plasma generated around the wall of the medium pipe. In addition, the reaction chamber 10 is usually combined with a vacuum-pumping device and a gas path system outside the apparatus.
Claims (5)
1. A cylindrical surface wave plasma generating device is characterized by comprising a high-frequency power supply (1), an impedance adjusting unit (2), an energy transmission waveguide (3), a waveguide converter (4) and a cylindrical slotted waveguide (5) which are sequentially connected, wherein a dielectric tube (6) is nested on the outer wall of the cylindrical slotted waveguide (5), a reaction cavity (10) is sleeved on the periphery of the dielectric tube (6), a vacuum cavity is formed between the outer wall of the dielectric tube (6) and the inner wall of the reaction cavity (10), a plurality of slits are formed in the cylindrical slotted waveguide (5), the high-frequency power supply (1) outputs microwaves to the impedance adjusting unit (2), the impedance adjusting unit (2) adjusts the power of the microwaves, and then the impedance adjusting unit (2) couples the adjusted microwaves into the energy transmission waveguide (3), then the microwave is transmitted to a waveguide converter (4) through an energy transmission waveguide (3) and further transmitted into a cylindrical slotted waveguide (5), the microwave generates surface current on the wall surface of the cylindrical slotted waveguide (5), the surface current passes through a slit at the slit in the form of displacement current, an electric field formed by the displacement current at the slit ionizes working gas around a dielectric tube (6) and generates plasma around the outer wall of the dielectric tube (6), and when the plasma density is high enough, the microwave on the cylindrical slotted waveguide (5) is conducted along the surface of the dielectric tube (6) in the form of surface wave, so that uniform surface wave plasma is formed on the outer wall of the dielectric tube (6);
the slit is a notch formed in the wall surface of the cylindrical slotted waveguide (5), the notch vertically cuts surface current on the wall surface of the cylindrical slotted waveguide (5), the slit is a rectangular notch, the short side of the rectangular notch is parallel to the axial direction of the cylindrical slotted waveguide (5), and the central distance between two adjacent slits vertical to the radial direction of the waveguide is the waveguide wavelength of half of the cylindrical slotted waveguide (5);
the energy transmission waveguide (3) is one or more of a rectangular waveguide, a cylindrical waveguide or a coaxial waveguide, and the waveguide converter (4) is used for converting a main mode of the energy transmission waveguide (3) into TE of the cylindrical slotted waveguide (5)11The waveguide converter comprises a transmission section, a transition section and an implementation section in sequence, wherein the transmission section is connected with the energy transmission waveguide (3) and has the same cross section as the energy transmission waveguide, the implementation section is connected with the cylindrical slotted waveguide (5) and has the same cross section as the cylindrical slotted waveguide, the transition section is a waveguide with a gradually changed cross section, and the cross section of the transition section is gradually changed from the cross section which is the same as that of the transmission section to the cross section which is the same as that of the implementation section.
2. A surface acoustic wave plasma generating apparatus as defined in claim 1, wherein said high frequency power source has a frequency of 300MHz to 3 THz.
3. A surface acoustic wave plasma generating apparatus as claimed in claim 1, wherein said impedance adjusting unit (2) is an impedance matcher corresponding to a waveguide form of the energy transmission waveguide (3).
4. A surface acoustic wave plasma generating apparatus as defined in claim 1, wherein said dielectric tube (6) is made of one of quartz glass, park glass and alumina ceramic.
5. A method for plasma modifying a material surface by using the surface acoustic wave plasma generating apparatus as claimed in claim 1, wherein a material carrying plate (13) is provided in a vacuum cavity between an outer wall of the dielectric tube (6) and an inner wall of the reaction chamber (10), a material to be modified is fixed on the material carrying plate (13), the reaction chamber (10) is evacuated, the high frequency power supply (1) is turned on and the output power is adjusted by the impedance adjusting unit (2), and a surface acoustic wave plasma is generated on the outer wall of the dielectric tube (6) and diffused to the material to be modified.
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| CN110062516B (en) * | 2019-04-15 | 2021-07-09 | 中国科学院合肥物质科学研究院 | Device for microwave plasma high-temperature heat treatment of filamentous materials |
| CN110830125B (en) * | 2019-10-11 | 2020-11-10 | 西安交通大学 | Substrate integrated slot waveguide test board for near-field coupling passive intermodulation test |
| CN111426750B (en) * | 2020-04-16 | 2021-01-26 | 武汉理工大学 | Simulation test device and test method capable of generating cylindrical wave |
| CN114956248B (en) * | 2021-02-24 | 2023-08-22 | 陕西青朗万城环保科技有限公司 | Slit microwave radiator |
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| DE4235914A1 (en) * | 1992-10-23 | 1994-04-28 | Juergen Prof Dr Engemann | Device for generating microwave plasmas |
| JP3923360B2 (en) * | 2002-04-26 | 2007-05-30 | 三菱電機株式会社 | Slot array antenna and slot array antenna apparatus |
| CN100390331C (en) * | 2005-09-22 | 2008-05-28 | 武汉化工学院 | Method and apparatus for polishing large-scale diamond membrane |
| CN101119609B (en) * | 2007-09-12 | 2011-03-30 | 清华大学 | Narrow slit and large slit combination type microwave plasma reaction cavity |
| CN101364660A (en) * | 2008-09-10 | 2009-02-11 | 中国科学技术大学 | Wideband directional coupler of PI type dielectric wave-guide |
| JP5698563B2 (en) * | 2011-03-02 | 2015-04-08 | 東京エレクトロン株式会社 | Surface wave plasma generating antenna and surface wave plasma processing apparatus |
| CN103066362A (en) * | 2011-10-19 | 2013-04-24 | 成都赛纳赛德科技有限公司 | Rectangular circular waveguide adapter |
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| CN117794040A (en) * | 2016-03-03 | 2024-03-29 | 北京北方华创微电子装备有限公司 | Surface wave plasma generating device and semiconductor process equipment |
| CN107787109A (en) * | 2017-11-21 | 2018-03-09 | 中国原子能科学研究院 | The connection waveguide of transmission waveguide and accelerating cavity chain |
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