CN107731646B - Surface wave plasma process equipment - Google Patents
Surface wave plasma process equipment Download PDFInfo
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- CN107731646B CN107731646B CN201610666868.4A CN201610666868A CN107731646B CN 107731646 B CN107731646 B CN 107731646B CN 201610666868 A CN201610666868 A CN 201610666868A CN 107731646 B CN107731646 B CN 107731646B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
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- Analytical Chemistry (AREA)
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Abstract
Surface wave plasma process equipment provided by the invention comprising reaction chamber, microwave transmission mechanism and resonance mechanism, resonance mechanism include resonant cavity, metal antenna plate, medium member and multiple metal probes, and the top of reaction chamber is arranged in resonant cavity；Multiple metal probes be it is liftable, the top vertical of lower end self-resonance chamber extends to the inside of resonant cavity；Quantity and position along the perforative multiple through-holes of its thickness direction, the quantity of multiple through-holes and position and multiple metal probes is provided on metal antenna plate to correspond；Medium member is for microwave energy to be coupled into reaction chamber.The vertical spacing between lower end and metal antenna plate by adjusting each metal probe, to adjust the Density Distribution of the plasma formed in reaction chamber.Surface wave plasma process equipment provided by the invention can adjust the distribution of plasma in real time, to meet the different requirements that the plasma under different process conditions is distributed.
Description
Technical field
The present invention relates to microelectronics technology, in particular to a kind of surface wave plasma process equipment.
Background technique
Currently, plasma processing device is widely used in the manufacturing process of integrated circuit or MEMS device.Deng
Plasma processing apparatus includes capacitance coupling plasma process equipment, inductively coupled plasma body process equipment, electron cyclotron
Resonance Plasma process equipment and surface wave plasma process equipment etc..Wherein, surface wave plasma process equipment phase
For other plasma processing devices, higher plasma density, lower electron temperature can be obtained, and do not need
Increase external magnetic field, therefore surface wave plasma process equipment becomes one of state-of-the-art plasma apparatus.
Fig. 1 is a kind of existing structural schematic diagram of surface wave plasma process equipment.As shown in Figure 1, surface wave etc.
Plasma processing apparatus mainly includes microwave source mechanism, antenna mechanism and reaction chamber 19.Wherein, microwave source mechanism includes power supply
1, microwave source (magnetron) 2, resonator 3, inverter 4, load 5, directional coupler 6, impedance adjustment unit 7, waveguide 8 and feed
Coaxial probe 9.Antenna mechanism includes antenna body 11, aperture plate 15, slow-wave plate 12 and dielectric-slab 16.It is micro- when carrying out technique
Wave source mechanism is loaded on slow-wave plate 12 for providing microwave energy, and by feeding coaxial probe 9；Microwave energy passes through stagnant wave
Wavelength is compressed after plate 12, and by 15 downward radiation of aperture plate, microwave excites shape in reaction chamber 19 by dielectric-slab 16
At plasma.In addition, supporting table 21 is provided in reaction chamber 19, to support substrate 20.
Fig. 2 is the top view of aperture plate.As shown in Fig. 2, microwave energy is by multiple T-type gaps in aperture plate 15
151 feed-ins, multiple T-type gaps 151 be distributed in using the center of aperture plate 15 as the center of circle, different radii multiple circumference on, thus
It can guarantee the plasma distributing homogeneity in the radial direction of 20 top of substrate.But since the structure of aperture plate 15 is solid
Fixed, the distribution situation of plasma is also fixed, and can not be adjusted, to be unable to satisfy in different process conditions
Lower the different of plasma distribution require.
Summary of the invention
The present invention is directed at least solve one of the technical problems existing in the prior art, a kind of surface wave plasma is proposed
Body process equipment can adjust the distribution of plasma in real time, to meet the plasma under different process conditions
The different of distribution require.
A kind of surface wave plasma process equipment is provided to achieve the purpose of the present invention, including reaction chamber and is used for
The microwave transmission mechanism of microwave energy is provided to the reaction chamber, further includes resonance mechanism, the resonance mechanism includes resonance
Chamber, metal antenna plate, medium member and multiple metal probes, wherein
The top of the reaction chamber is arranged in the resonant cavity；
The multiple metal probe is liftable, and the top vertical of its lower end from the resonant cavity extend to it is described humorous
The inside of vibration chamber；
The metal antenna plate is used as the bottom chamber wall of the resonant cavity, and is provided on the metal antenna plate along it
The quantity and position of the perforative multiple through-holes of thickness direction, the quantity of the multiple through-hole and position and the multiple metal probe
It corresponds；
The medium member is for the microwave energy to be coupled into the reaction chamber；
The vertical spacing between lower end and the metal antenna plate by adjusting each metal probe, to adjust
The Density Distribution of the plasma formed in the reaction chamber.
Preferably, metal antenna plate institute in the plane, the projective distribution of the multiple metal probe is with described
The center of plane where metal antenna plate is on the center of circle and the different multiple circumference of radius.
Preferably, the resonance mechanism further includes multiple elevating mechanisms, the quantity of the elevating mechanism and the circumference
Quantity is corresponding, each elevating mechanism be used to driving correspondingly all metal probes on each circumference it is synchronous rise or under
Drop；Alternatively,
The quantity of the elevating mechanism is corresponding with the quantity of the metal probe, and each elevating mechanism is for corresponding
Ground drives each metal probe to rise or fall.
Preferably, metal antenna plate institute in the plane, the projective distribution of the multiple metal probe is with described
The center of plane where metal antenna plate is on a circumference in the center of circle.
Preferably, the resonance mechanism further includes multiple elevating mechanisms, and the quantity of the elevating mechanism and the metal are visited
The quantity of needle is corresponding, and each elevating mechanism for driving each metal probe to rise or fall correspondingly；Alternatively,
The elevating mechanism is one, is risen or fallen to drive all metal probes to synchronize.
Preferably, each metal probe has external screw thread, and is provided with and passes through in the roof cavity wall of the resonant cavity
The threaded hole of its thickness is worn, each metal probe is mounted in each threaded hole correspondingly by its external screw thread；
By any one metal probe clockwise or counterclockwise, come adjust the metal probe lower end and the gold
Belong to the vertical spacing between antenna plate.
Preferably, the vertical spacing between the lower end of the metal probe and the metal antenna plate is not less than 10mm.
Preferably, the value range of the length of the resonant cavity in the vertical direction is in 10~200mm.
Preferably, the through-hole is circular hole, and the value range of the diameter of the circular hole is in 20~120mm；Alternatively,
The through-hole is square hole, and the value range of the side length of the square hole is in 20~120mm.
Preferably, material used by the metal antenna plate includes copper, aluminium or stainless steel.
Preferably, the medium member includes dielectric-slab, and the dielectric-slab setting is reacted in the metal antenna plate with described
Between chamber, and it is tightly connected with the reaction chamber；Alternatively,
The medium member includes mounting plate, mounting plate setting the metal antenna plate and the reaction chamber it
Between, and be tightly connected with the reaction chamber, and multiple medium blocks through its thickness, institute are embedded in the mounting plate
The quantity and position of the quantity and position and the multiple through-hole of giving an account of mass correspond.
Preferably, the value range of the thickness of the medium member is in 5~80mm.
Preferably, material used by the medium member includes the quartz of quartz, ceramics, surface coated with yttria
Or surface is coated with the ceramics of yttria.
Preferably, the medium member includes the dielectric material being filled in each through-hole.
Preferably, the surface wave plasma process equipment further includes connecting cylinder and screw probe, wherein
The connecting cylinder is vertically arranged in the top of the resonant cavity, and its inside is connected with the inside of the resonant cavity
It is logical；The microwave transmission mechanism includes being used for transmission the waveguide of microwave energy, and the waveguide is connect with the top of the connecting cylinder,
And it is connected with the inside of the connecting cylinder；
The lower end of the screw probe sequentially passes through the waveguide and the connecting cylinder straight down, and extends to described humorous
Shake the inside of chamber, to will be in resonant cavity described in microwave energy feed-in.
Preferably, the microwave transmission mechanism further includes short-circuit plunger, and the end of the waveguide is arranged in the short-circuit plunger
Portion, to adjust the distribution of the standing wave in the waveguide.
The invention has the following advantages:
Surface wave plasma process equipment provided by the invention is provided with resonant cavity and can at the top of reaction chamber
The metal probe of lifting, and the top vertical of the lower end self-resonance chamber of the metal probe is made to extend to the inside of resonant cavity.Into
When row technique, it is located near the metal probe in resonant cavity and forms electromagnetic field of high frequency, the distribution of the electromagnetic field of high frequency can shadow
The Density Distribution of the plasma formed in reaction chamber is rung, as a result, the lower end by each metal probe of adjusting and metal
Vertical spacing between antenna plate can be adjusted the distribution of electromagnetic field of high frequency, so as to be adjusted in real time in reaction chamber
The Density Distribution of the plasma of indoor formation, and then can satisfy the plasma under different process conditions and be distributed not
With requirement.
Detailed description of the invention
Fig. 1 is a kind of existing structural schematic diagram of surface wave plasma process equipment；
Fig. 2 is the top view of aperture plate；
Fig. 3 is the structural schematic diagram of surface wave plasma process equipment provided in an embodiment of the present invention；
Fig. 4 A is the top cross-sectional view of the first resonance mechanism used in the embodiment of the present invention；
Fig. 4 B is the main view sectional view that the first resonance mechanism used in the embodiment of the present invention uses the first regulative mode；
Fig. 4 C is the main view sectional view that the first resonance mechanism used in the embodiment of the present invention uses second of regulative mode；
Fig. 4 D is the plasma distribution map obtained using the first regulative mode；
Fig. 4 E is the plasma distribution map obtained using second of regulative mode；
Fig. 5 A is the top cross-sectional view of second of resonance mechanism used in the embodiment of the present invention；
Fig. 5 B is the main view sectional view that second of resonance mechanism used in the embodiment of the present invention uses the first regulative mode；
Fig. 5 C is the main view sectional view that second of resonance mechanism used in the embodiment of the present invention uses second of regulative mode.
Specific embodiment
To make those skilled in the art more fully understand technical solution of the present invention, come with reference to the accompanying drawing to the present invention
The surface wave plasma process equipment of offer is described in detail.
Fig. 3 is the structural schematic diagram of surface wave plasma process equipment provided in an embodiment of the present invention.Referring to Fig. 3,
Surface wave plasma process equipment includes reaction chamber 46, microwave transmission mechanism and resonance mechanism.Microwave transmission mechanism passes through
Resonance mechanism provides microwave energy to reaction chamber 46.Wherein, supporting table 47 is provided in reaction chamber 46, for carrying base
Piece.Microwave transmission mechanism includes power supply 31, microwave source (magnetron) 32, resonator 33, inverter 34, load 35, directional couple
Device 36, impedance adjustment unit 37 and waveguide 38.
Resonance mechanism includes resonant cavity 42, metal antenna plate 44, medium member 45 and multiple metal probes 43, wherein resonance
The top of reaction chamber 46 is arranged in chamber 42, and is made of the metal of stainless steel, aluminium alloy etc., and can be according to tool
Body situation is designed as the cavity of the arbitrary shape of cylindrical, rectangle or square etc..
In the present embodiment, surface wave plasma process equipment further includes connecting cylinder 41 and screw probe 39, wherein even
Connect cylinder 41 is vertically arranged in the top of resonant cavity 42, and its inside is connected with the inside of resonant cavity 42.Microwave transmission mechanism
Waveguide 38 is connect with the top of connecting cylinder 41, and is connected with the inside of connecting cylinder 41.The lower end of screw probe 39 is straight down
Waveguide 38 and connecting cylinder 41 are sequentially passed through, and extends to the inside of resonant cavity 42, to will be in microwave energy feed-in resonant cavity 42.
Preferably, microwave transmission mechanism further includes short-circuit plunger 40, which is arranged in the end of waveguide 38, is used
To adjust the distribution of the standing wave in waveguide 38.
Multiple metal probes 43 are liftable, and the top vertical of its lower end self-resonance chamber 42 extends to resonant cavity 42
It is internal.Metal antenna plate 44 is used as the bottom chamber wall of resonant cavity 42, and used material includes copper, aluminium or stainless steel.And
And it is provided on metal antenna plate 44 along the perforative multiple through-holes 441 of its thickness direction, the quantity of multiple through-holes 441 and position
It sets and the quantity of multiple metal probes 43 and position one-to-one correspondence.
Medium member 45 is for microwave energy to be coupled into reaction chamber 46, to excite generation etc. in reaction chamber 46
Gas ions.In the present embodiment, medium member 45 be arranged between metal antenna plate 44 and reaction chamber 46, and with reaction chamber 46
It is tightly connected, that is, medium member 45 uses monolithic construction, and metal antenna plate 44 and reaction chamber 46 is mutually isolated, so not
Microwave energy can be only coupled into reaction chamber 46, but also the boundary between resonance mechanism and reaction chamber 46 can be made
Face is dielectric material, so as to avoid the formation of metallic pollution.Material used by the medium member 45 include quartz, ceramics,
Surface is coated with the ceramics of quartz or surface coated with yttria of yttria.Preferably, the thickness of medium member 45
The value range of degree is in 5~80mm.
When carrying out technique, it is located near the metal probe 43 in resonant cavity 42 and forms electromagnetic field of high frequency, the high frequency
The distribution of electromagnetic field will affect the Density Distribution of the plasma formed in reaction chamber 46.By adjusting each metal probe
Vertical spacing between 43 lower end and metal antenna plate 44 can be adjusted the distribution of electromagnetic field of high frequency, so as to
The Density Distribution of the plasma formed in reaction chamber 46 is adjusted in real time, and then can satisfy under different process conditions
The different of plasma distribution require.In addition, by above-mentioned resonance mechanism, can under extremely low air pressure conditions, using compared with
Low power is just capable of forming the initial ionization of reaction gas, to expand technique section.
Two kinds of arrangement modes of metal probe 43 are described in detail below.Specifically, the first arrangement mode, asks one
And refering to Fig. 4 A~Fig. 4 E, 44 institute of metal antenna plate in the plane, the projective distribution of multiple metal probes 43 is with metal day
The center of 44 place plane of line plate is on the center of circle and different two circumference (inner ring circumference and outer ring circumference) of radius.Such as Fig. 4 A
Shown, the metal probe 43N being distributed on inner ring circumference has 6, respectively 43N1~43N6.The gold being distributed on the circumference of outer ring
Belonging to probe 43W has 12, respectively 43W1~43W12.
Vertical spacing between the lower end and metal antenna plate 44 of metal probe 43 is bigger, then in reaction chamber 46 with the gold
The Density Distribution for belonging to the plasma of the corresponding region formation in position of probe 43 is smaller；Conversely, the lower end of metal probe 43
Vertical spacing between metal antenna plate 44 is smaller, then area corresponding with the position of the metal probe 43 in reaction chamber 46
The Density Distribution for the plasma that domain is formed is bigger.Based on this, as shown in Figure 4 B, 6 metals being distributed on inner ring circumference are visited
Vertical spacing H1 between the lower end of needle 43N and metal antenna plate 44 is identical, 12 metal probes being distributed on the circumference of outer ring
Vertical spacing H2 between the lower end of 43W and metal antenna plate 44 is identical, and H1 is less than H2, for example, H1=10mm；H2=
40mm.In this case, since H1 is less than H2, be then distributed in the plasma of the top of supporting table 47, be distributed in
The density of the corresponding area distribution of 6 metal probe 43N on circle circumference is greater than 12 metals being distributed on the circumference of outer ring
The density of the corresponding area distribution of probe 43W, as shown in Figure 4 D, to realize the adjusting of the Density Distribution of plasma.
As shown in Figure 4 C, it is distributed between the lower end and metal antenna plate 44 of 6 metal probe 43N on inner ring circumference
Vertical spacing H4 is identical, is distributed in perpendicular between the lower end and metal antenna plate 44 of 12 metal probe 43W on the circumference of outer ring
Straight spacing H3 is identical, and H3 is less than H4, for example, H3=10mm；H4=30mm.In this case, since H3 is less than H4, then divide
Plasma of the cloth above supporting table 47, in area corresponding with 12 metal probe 43W being distributed on the circumference of outer ring
The density of domain distribution is greater than the density for the corresponding area distribution of 6 metal probe 43N being distributed on inner ring circumference, such as Fig. 4 E
It is shown, to realize the adjusting of the Density Distribution of plasma.
It certainly, in practical applications, can also be as the case may be by the lower end of the metal probe on same circumference and gold
The vertical spacing belonged between antenna plate is set as not identical, is distributed not with meeting the plasma under different process conditions
With requirement.
It should be noted that in the present embodiment, 44 institute of metal antenna plate in the plane, the throwing of multiple metal probes 43
Shadow is distributed in using the center of 44 place plane of metal antenna plate as the center of circle and different two circumference of radius (inner ring circumference and outer
Enclose circumference) on.But the present invention is not limited thereto, in practical applications, the quantity of circumference can also be three or more.
In practical applications, remote auto tune can be carried out to the elevating movement of above-mentioned metal probe 43 using elevating mechanism
Section, alternatively, the elevating movement of above-mentioned metal probe 43 can also be adjusted using manual mode.Specifically, it is long-range from
In the dynamic mode adjusted, resonance mechanism further includes multiple elevating mechanism (not shown)s, the quantity and circumference of the elevating mechanism
Quantity it is corresponding, each elevating mechanism be used to driving correspondingly all metal probes on each circumference it is synchronous rise or
Decline, that is, elevating mechanism is two, one of them is for the synchronous all metal probe 43N driven on inner ring circumference；It is wherein another
One all metal probe 43W on synchronous driving outer ring circumference.Alternatively, the quantity of elevating mechanism can also be visited with metal
The quantity of needle is corresponding, and each elevating mechanism for driving each metal probe to rise or fall correspondingly.That is,
The quantity of elevating mechanism is 18, and each elevating mechanism rises or falls for corresponding metal probe to be operated alone.In reality
In, elevating mechanism can be lifting motor, lifting cylinder or lifting hydraulic cylinder.
In manually adjusting mode, each metal probe has external screw thread, and sets in the roof cavity wall 421 of resonant cavity 42
It is equipped with the threaded hole through its thickness, each metal probe 43 is mounted on each threaded hole by its external screw thread correspondingly
In.By any one metal probe 43 clockwise or counterclockwise manually, to adjust lower end and the metal of the metal probe
Vertical spacing between antenna plate 44.Certainly, on this basis, can also be manually adjusted by the way of automatic adjustment instead of this
Mode, that is, drive any one metal probe 43 clockwise automatically or the inverse time using the driving mechanism of rotating electric machine etc.
Needle rotation, to realize the adjusting to the vertical spacing between the lower end and metal antenna plate 44 of metal probe.
Second of arrangement mode, also referring to Fig. 5 A~Fig. 5 C, 44 institute of metal antenna plate in the plane, visit by multiple metals
The projective distribution of needle 43 is on a circumference using the center of 44 place plane of metal antenna plate as the center of circle.As shown in Figure 5A, divide
Metal probe 43D of the cloth on the circumference has 5, respectively 43D1~43D5.
As shown in Figure 5 B, it is distributed in perpendicular between the lower end and metal antenna plate 44 of 5 metal probe 43D on the circumference
Straight spacing H5 is identical, for example, H5=20mm.
As shown in Figure 5 C, it is distributed in perpendicular between the lower end and metal antenna plate 44 of 5 metal probe 43D on the circumference
Straight spacing H5 is not identical, and the vertical spacing H7 between the lower end and metal antenna plate 44 of one of metal probe 43D is greater than it
Vertical spacing H6 between the lower end and metal antenna plate 44 of remaining metal probe 43D, for example, H6=20mm；H7=40mm.At this
In the case of kind, the plasma above supporting table 47 is distributed in the one of metal probe 43D for being H7 with vertical spacing
The density of corresponding area distribution is less than that be distributed in vertical spacing be the corresponding region remaining metal probe 43D of H6 point
The density of cloth, to realize the adjusting of the Density Distribution of plasma.
In practical applications, remote auto tune can be carried out to the elevating movement of above-mentioned metal probe 43 using elevating mechanism
Section, alternatively, the elevating movement of above-mentioned metal probe 43 can also be adjusted using manual mode.The elevating mechanism with it is above-mentioned
Elevating mechanism in the first arrangement mode is similar, and difference is only that, elevating mechanism can also be one, to drive
Some metal probes, which synchronize, to be risen or fallen.It manually adjusts mode and manually adjusts mode phase with the first above-mentioned arrangement mode
Together, details are not described herein.
Preferably, the vertical spacing between the lower end of metal probe 43 and metal antenna plate 44 is not less than 10mm, to avoid
There is a situation where atmosphere to puncture under the conditions of high-power.
It is further preferred that the value range of the length of resonant cavity 42 in the vertical direction is in 10~200mm, to give metal
Enough spaces are reserved in the elevating movement of probe 43.
In practical applications, the through-hole on metal antenna plate 44 can be circular hole 441, the value range of the diameter of the circular hole
In 20~120mm；Alternatively, the through-hole 441 on metal antenna plate 44 can also be square hole, the side length of the square hole is taken
It is worth range in 20~120mm.Alternatively, the through-hole on metal antenna plate 44 can also be the through-hole of other arbitrary shapes.
It should be noted that in the present embodiment, medium member 45 uses monolithic construction, but the invention is not limited to
This, in practical applications, medium member 45 can also adopt a split structure, it may be assumed that medium member 45 includes mounting plate, which sets
It sets between metal antenna plate 44 and reaction chamber 46, and is tightly connected with reaction chamber 46, and be embedded in mounting plate
Through multiple medium blocks of its thickness, the quantity and position of the quantity of the medium block and position and multiple through-holes are corresponded.Or
Person, medium member 45 can also be the dielectric material being filled in each through-hole 441, to replace above-mentioned dielectric-slab or medium
Block.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, essence of the invention is not being departed from
In the case where mind and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (16)
1. a kind of surface wave plasma process equipment, including reaction chamber and for providing microwave energy to the reaction chamber
Microwave transmission mechanism, which is characterized in that further include resonance mechanism, the resonance mechanism include resonant cavity, metal antenna plate, be situated between
Matter part and multiple metal probes, wherein
The top of the reaction chamber is arranged in the resonant cavity；
The multiple metal probe is liftable, and the top vertical of its lower end from the resonant cavity extends to the resonant cavity
Inside；
The metal antenna plate is used as the bottom chamber wall of the resonant cavity, and is provided on the metal antenna plate along its thickness
The quantity and position of the perforative multiple through-holes in direction, the quantity of the multiple through-hole and position and the multiple metal probe are one by one
It is corresponding；
The medium member is for the microwave energy to be coupled into the reaction chamber；
The vertical spacing between lower end and the metal antenna plate by adjusting each metal probe, to adjust described
The Density Distribution of the plasma formed in reaction chamber.
2. surface wave plasma process equipment as described in claim 1, which is characterized in where the metal antenna plate
In plane, the center of circle and half is in the center of projective distribution plane where using the metal antenna plate of the multiple metal probe
On the different multiple circumference of diameter.
3. surface wave plasma process equipment as claimed in claim 2, which is characterized in that the resonance mechanism further includes more
A elevating mechanism, the quantity of the elevating mechanism is corresponding with the quantity of the circumference, and each elevating mechanism is for corresponding
Ground drives all metal probes on each circumference to synchronize and rises or falls；Alternatively,
The quantity of the elevating mechanism is corresponding with the quantity of the metal probe, and each elevating mechanism for driving correspondingly
Each metal probe is moved to rise or fall.
4. surface wave plasma process equipment as described in claim 1, which is characterized in where the metal antenna plate
In plane, one as the center of circle of the center of projective distribution plane where using the metal antenna plate of the multiple metal probe
On circumference.
5. surface wave plasma process equipment as claimed in claim 4, which is characterized in that the resonance mechanism further includes more
A elevating mechanism, the quantity of the elevating mechanism is corresponding with the quantity of the metal probe, and each elevating mechanism is for one by one
Each metal probe is accordingly driven to rise or fall；Alternatively,
The elevating mechanism is one, is risen or fallen to drive all metal probes to synchronize.
6. surface wave plasma process equipment as claimed in claim 2 or 4, which is characterized in that each metal probe
With external screw thread, and it is provided in the roof cavity wall of the resonant cavity threaded hole through its thickness, each metal probe is logical
Its external screw thread is crossed to be mounted on correspondingly in each threaded hole；
By any one metal probe clockwise or counterclockwise, to adjust the lower end and the metal day of the metal probe
Vertical spacing between line plate.
7. the surface wave plasma process equipment as described in claim 1-5 any one, which is characterized in that the metal is visited
Vertical spacing between the lower end of needle and the metal antenna plate is not less than 10mm.
8. the surface wave plasma process equipment as described in claim 1-5 any one, which is characterized in that the resonant cavity
The value range of length in the vertical direction is in 10~200mm.
9. the surface wave plasma process equipment as described in claim 1-5 any one, which is characterized in that the through-hole is
Circular hole, the value range of the diameter of the circular hole is in 20~120mm；Alternatively,
The through-hole is square hole, and the value range of the side length of the square hole is in 20~120mm.
10. the surface wave plasma process equipment as described in claim 1-5 any one, which is characterized in that the metal
Material used by antenna plate includes copper, aluminium or stainless steel.
11. the surface wave plasma process equipment as described in claim 1-5 any one, which is characterized in that the medium
Part includes dielectric-slab, and the dielectric-slab is arranged between the metal antenna plate and the reaction chamber, and with the reaction chamber
Room is tightly connected；Alternatively,
The medium member includes mounting plate, and the mounting plate is arranged between the metal antenna plate and the reaction chamber, and
It is tightly connected with the reaction chamber, and is embedded with multiple medium blocks through its thickness in the mounting plate, given an account of
The quantity and position of the quantity of mass and position and the multiple through-hole correspond.
12. surface wave plasma process equipment as claimed in claim 11, which is characterized in that the thickness of the medium member
Value range is in 5~80mm.
13. surface wave plasma process equipment as claimed in claim 11, which is characterized in that used by the medium member
Material includes quartz or ceramics.
14. the surface wave plasma process equipment as described in claim 1-5 any one, which is characterized in that the medium
Part includes the dielectric material being filled in each through-hole.
15. the surface wave plasma process equipment as described in claim 1-5 any one, which is characterized in that the surface
Wave plasma processing device further includes connecting cylinder and screw probe, wherein
The connecting cylinder is vertically arranged in the top of the resonant cavity, and its inside is connected with the inside of the resonant cavity；Institute
Stating microwave transmission mechanism includes being used for transmission the waveguide of microwave energy, and the waveguide is connect with the top of the connecting cylinder, and with
The inside of the connecting cylinder is connected；
The lower end of the screw probe sequentially passes through the waveguide and the connecting cylinder straight down, and extends to the resonant cavity
Inside, to will be in resonant cavity described in microwave energy feed-in.
16. surface wave plasma process equipment as claimed in claim 15, which is characterized in that the microwave transmission mechanism is also
Including short-circuit plunger, the end of the waveguide is arranged in the short-circuit plunger, to adjust the distribution of the standing wave in the waveguide.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610666868.4A CN107731646B (en) | 2016-08-12 | 2016-08-12 | Surface wave plasma process equipment |
| TW105140381A TWI612853B (en) | 2016-03-03 | 2016-12-07 | Surface wave plasma device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610666868.4A CN107731646B (en) | 2016-08-12 | 2016-08-12 | Surface wave plasma process equipment |
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| CN107731646A CN107731646A (en) | 2018-02-23 |
| CN107731646B true CN107731646B (en) | 2019-08-23 |
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| CN110769585B (en) * | 2018-07-27 | 2023-08-18 | 北京北方华创微电子装备有限公司 | Surface wave plasma device |
| CN110797248A (en) * | 2018-08-01 | 2020-02-14 | 北京北方华创微电子装备有限公司 | Surface wave plasma device and semiconductor processing apparatus |
| CN110797250B (en) * | 2018-08-03 | 2022-12-09 | 北京北方华创微电子装备有限公司 | Surface wave plasma processing apparatus |
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