CN102548180A - Medium window, inductive coupling coil assembly, and plasma processing equipment - Google Patents
Medium window, inductive coupling coil assembly, and plasma processing equipment Download PDFInfo
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- CN102548180A CN102548180A CN2010106222093A CN201010622209A CN102548180A CN 102548180 A CN102548180 A CN 102548180A CN 2010106222093 A CN2010106222093 A CN 2010106222093A CN 201010622209 A CN201010622209 A CN 201010622209A CN 102548180 A CN102548180 A CN 102548180A
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Abstract
The invention provides a medium window, an inductive coupling coil assembly and plasma processing equipment, wherein the medium window provided by the invention is used for mounting inductive coupling coils in the plasma processing equipment; an upper surface of the medium window is provided with a clamping part which is matched with the inductive coupling coil in shape; with the help of the clamping part, the inductive coupling coils can be fixed on the upper surface of the medium window accurately, so that uniformly distributed plasmas can be obtained in a plasma technological chamber accurately. The inductive coupling coil assembly and the plasma processing equipment provided by the invention can also accurately mount and locate the inductive coupling coils, thereby obtaining uniformly distributed plasmas in the technological chamber.
Description
Technical field
The present invention relates to microelectronics technology, particularly, relate to a kind of medium window, use the inductance-coupled coil assembly and the apparatus for processing plasma of this medium window.
Background technology
In recent years, microelectronic processing technique has been obtained unprecedented achievement.In the production process of microelectronic product, need the frequent apparatus for processing plasma that uses that substrate is carried out various processing technologys.
At present, in numerous plasma exciatiaon modes, the inductively coupled plasma technology is comparatively commonly used.This technology applies certain radio-frequency power by inductance-coupled coil in processing chamber, in order to the process gas in the processing chamber is ionized into plasmoid, by this plasma substrate is carried out corresponding processing technology then.It is thus clear that; Factors such as the structure of above-mentioned inductance-coupled coil and installation accuracy play very crucial effect with the distributing homogeneity of article on plasma body; In case and plasma density is inhomogeneous, the uniformity with having a strong impact on process rate finally causes adverse effect to process results.
See also Fig. 1, be a kind of scheme of installation of inductance-coupled coil commonly used at present.As shown in the figure, fix by 1 pair of inductance-coupled coil 2 of a coil brace, be specially, process a plurality of coil stationary hole 3 in the corresponding position of inductance-coupled coil 2 and coil brace 1, and utilize screw to be fixed on inductance-coupled coil 2 on the coil brace 1; Through supporting 4 coil brace 1 is positioned on the medium window (figure do not show) then, thereby inductance-coupled coil 2 is suspended in the medium window top position; The two ends of inductance-coupled coil 2 are connected with radio-frequency power supply with outer intercell connector 9 through interior intercell connector 8.
In above-mentioned inductance-coupled coil mounting structure, the distance between the installation site of inductance-coupled coil, the distance between the coil, coil and the medium window all can influence the distributing homogeneity of plasma, and then influences the uniformity of process results.Therefore, there is drawback inevitably in above-mentioned coil mounting structure:
One of which; Because inductance-coupled coil just is suspended in the medium window top through several fixing points; Thereby the position away from the coil stationary screw on the inductance-coupled coil can be out of shape because of action of gravity; Thereby make the distance on each position and medium window surface on the inductance-coupled coil have certain difference, and above-mentioned distance difference can influence the local density of plasma equally and distribute.
They are two years old; Owing to need could use screw to be fixed on the coil brace at a plurality of fixing holes of processing on the inductance-coupled coil; Thereby the fixing hole position on inductance-coupled coil can influence the local resistance of coil; Thereby influence the uniformity of the distribute power in the coil, the local density that finally can influence plasma equally distributes.
Three, above-mentioned installation process to inductance-coupled coil need and realize by the manual work installation; Thereby there is certain manual operation difference inevitably; This error will influence the installation accuracy of distance between each circle and the distance between inductance-coupled coil and the medium window etc. on the installation site, inductance-coupled coil of inductance-coupled coil; Above-mentioned installation accuracy error will cause the radio-frequency power skewness of diverse location on the coil, and finally influence the distributing homogeneity of plasma.
Summary of the invention
For addressing the above problem, the present invention provides a kind of medium window, and it can install and locate inductance-coupled coil accurately, thereby obtains equally distributed plasma.
For addressing the above problem, the present invention also provides a kind of inductance-coupled coil assembly, and it can install and locate equally inductance-coupled coil accurately, thereby obtains equally distributed plasma.
For addressing the above problem, the present invention also provides a kind of apparatus for processing plasma simultaneously, and it can install and locate equally inductance-coupled coil accurately, thereby obtains equally distributed plasma.
For this reason, the present invention provides a kind of medium window, is used at apparatus for processing plasma inductance-coupled coil being installed, and wherein, the upper surface of medium window has the be installed portion suitable with the shape of inductance-coupled coil, and inductance-coupled coil can be fixed in the portion of being installed.
Wherein, the above-mentioned portion of being installed comprises and the suitable groove of the shape of inductance-coupled coil.
Wherein, the deep equality of each position in the above-mentioned groove, and the degree of depth of groove between the height of inductance-coupled coil 1/4～3/4 between.
Preferably, the cell wall of above-mentioned groove is through smooth treatment.
Wherein, the material that medium window adopted comprises quartz, pottery.
In addition, the present invention also provides a kind of inductance-coupled coil assembly, comprises medium window and the inductance-coupled coil that is arranged at the medium window upper surface, and above-mentioned medium window is the medium window that the invention described above provided, and is used for inductance-coupled coil is fixed.
In addition, the present invention also provides a kind of apparatus for processing plasma, comprises processing chamber, above processing chamber, is provided with the medium window that the invention described above provides, in order to installation, fixed inductance coupling coil.This plasma treatment facility comprises plasma etching equipment.
At last, the present invention also provides a kind of apparatus for processing plasma, comprises processing chamber, above processing chamber, is provided with the inductance-coupled coil assembly that the invention described above provides, in order in processing chamber, to apply radio-frequency power.This plasma treatment facility comprises plasma etching equipment.
The present invention has following beneficial effect:
The upper surface of medium window provided by the present invention has the be installed portion suitable with the shape of inductance-coupled coil, inductance-coupled coil directly is positioned over can realizes fixing inductance-coupled coil in this portion that is installed.And owing to need not to use coil brace and screw can fix above-mentioned inductance-coupled coil; Therefore; Need not fixed processing hole on inductance-coupled coil; Thereby also just avoided of the influence of said fixing hole, and then made the distribute power zone in the inductance-coupled coil even, in processing chamber, to obtain equally distributed plasma to the resistance of each position of inductance-coupled coil; They are two years old; Inductance-coupled coil is directly fixed on the upper surface of medium window provided by the invention; Thereby; Each position at inductance-coupled coil all can obtain effective support, thus the problem of avoiding some position of inductance-coupled coil to be out of shape because of action of gravity, and then can in processing chamber, obtain equally distributed plasma; They are three years old; The upper surface of medium window provided by the invention has and the suitable installation portion of the shape of inductance-coupled coil; Thereby can accurately locate effectively avoiding position and the form error in the installation process inductance-coupled coil, and then help in processing chamber, obtaining the plasma that is evenly distributed.
Inductance-coupled coil assembly provided by the invention comprises the medium window that inductance-coupled coil and the invention described above provide; It is accurately fixing to utilize above-mentioned medium window that above-mentioned inductance-coupled coil is carried out, thereby helps the plasma that acquisition is evenly distributed in plasma process cavity.
Apparatus for processing plasma provided by the invention comprises processing chamber, and above its processing chamber, is provided with medium window or inductance-coupled coil assembly that the invention described above provides.Therefore, this plasma treatment facility can carry out accurately fixing equally to inductance-coupled coil, thus the plasma that acquisition is evenly distributed in its processing chamber.
Description of drawings
Fig. 1 is a kind of scheme of installation of inductance-coupled coil commonly used at present;
Fig. 2 is the cutaway view of a specific embodiment of medium window provided by the invention;
Fig. 3 is the cutaway view of a specific embodiment of inductance coupling high assembly provided by the invention;
And
Fig. 4 is the structural representation of a specific embodiment of apparatus for processing plasma provided by the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, medium window provided by the invention, inductance-coupled coil assembly and apparatus for processing plasma are described in detail below in conjunction with accompanying drawing.
The present invention provides a kind of medium window; It can be used to inductance-coupled coil is installed in apparatus for processing plasma. and the upper surface of this medium window has the be installed portion suitable with the shape of inductance-coupled coil, inductance-coupled coil directly is positioned over can realizes accurately fixing inductance-coupled coil in the portion of being installed.In practical application, the above-mentioned portion of being installed for example can adopt a kind of suitable groove structure of shape of and above-mentioned inductance-coupled coil, in order to inductance-coupled coil is embedded in this groove.
See also Fig. 2, be the cutaway view of a specific embodiment of medium window provided by the invention.Medium window provided by the invention 10 adopts materials such as quartz, pottery to process, and its integral body is the platy structure of circle, and is provided with the groove 11 that the shape with above-mentioned inductance-coupled coil matches at the upper surface of medium window 10.Usually, inductance-coupled coil is a kind of spiral yarn shaped structure of plane, and correspondingly, above-mentioned groove 11 also should be set to spiral yarn shaped structure.
In the present embodiment, the degree of depth of each position all equates in the above-mentioned groove 11, all can contact with above-mentioned groove 11 with each position of guaranteeing inductance-coupled coil, thereby each position of inductance-coupled coil is all equated with the distance of plasma process cavity.
And, the degree of depth of said groove 11 should between the inductance-coupled coil height that will install 1/4～3/4 between.The reason that is provided with like this is, if the degree of depth of groove 11 is lower than 1/4 of inductance-coupled coil height, then can't carry out reliable fixation to inductance-coupled coil; And if the degree of depth of groove 11 then when inductance-coupled coil is applied radio-frequency power, is unfavorable for the coil heat radiation greater than 3/4 of inductance-coupled coil height.In the present embodiment, make the degree of depth of above-mentioned groove 11 be substantially equal to 1/2 of inductance-coupled coil height.
In addition, in a preferred embodiment, the mode that adopts for example machinery or chemical polishing etc. is carried out smooth treatment to the cell wall of above-mentioned groove 11, with more fixing above-mentioned inductance-coupled coil.
The medium window that the invention described above provides is when being used for apparatus for processing plasma, and only need be positioned over inductance-coupled coil in the surperficial groove of medium window and get final product, and utilize the gravity of inductance-coupled coil self can make it closely to contact with bottom portion of groove.Therefore; Use medium window provided by the invention inductance-coupled coil is carried out immobile phase for fixed structure shown in Figure 1; Has following advantage: one of which; Medium window provided by the invention need can not realized the installing and fixing of inductance-coupled coil not only had advantage simple in structure, that be easy to realize, and can practice thrift equipment cost by external modules such as coil brace and screws; They are two years old; Medium window provided by the invention is fixed inductance-coupled coil by the groove of accurate processing; Thereby the deformation error that can effectively avoid processing and the alignment error when adopting assembly such as coil brace and screw and cause because of action of gravity; Thereby can inductance-coupled coil accurately be installed in the top of processing chamber, and can in processing chamber, obtain the plasma that is evenly distributed; They are three years old; Medium window provided by the invention is to inductance-coupled coil fixedly the time; Need not fixed processing hole on inductance-coupled coil; Thereby avoid of the influence of said fixing hole, and then help radio-frequency power and in inductance-coupled coil, evenly distribute, and finally in processing chamber, form uniform plasma the resistance of diverse location on the inductance-coupled coil.
It is to be noted; Though be to be example and the portion of being installed of medium window is explained with the groove structure in the foregoing description; But the present invention is not limited thereto, as long as integrated and all can be used as the portion of being installed with fixed structure that the shape picture of inductance-coupled coil coincide with medium window on medium window surface.Those skilled in the art should be able to make various deformation and improvement to this portion of being installed under the inspiration of the foregoing description, and every distortion of having done based on spirit of the present invention and essence and improve and all should be regarded as protection scope of the present invention.
See also Fig. 3, be the cutaway view of a specific embodiment of inductance coupling high assembly provided by the invention.In the present embodiment, the medium window 10 that the concrete inductance-coupled coil 20 of this inductance coupling high assembly and the invention described above provide.Wherein, medium window 10 upper surfaces have the groove 11 suitable with the shape of inductance-coupled coil 20, accurately are fixed on the upper surface of medium window 10 by this groove 11 and with inductance-coupled coil 20.This inductance-coupled coil 20 can employing and background technology or loop construction that those skilled in the art used always, thereby will not give unnecessary details.All have identical or similar characteristics as for the material of medium window 10 and the structure of groove 11 thereof etc., will not give unnecessary details equally with above-mentioned medium window in embodiment illustrated in fig. 2.
See also Fig. 4, be the structural representation of a specific embodiment of apparatus for processing plasma provided by the invention.
Apparatus for processing plasma provided by the invention; Comprise processing chamber 4; Above processing chamber 4, be provided with medium window 2 or inductance-coupled coil provided by the invention 1 assembly that the invention described above provides; In order to inductance-coupled coil 1 is installed accurately, is fixed; And make the radio-frequency power of radio-frequency power supply 5 put on the inside of processing chamber 4 equably by above-mentioned inductance-coupled coil 1, thereby form equally distributed plasma, and then help obtaining uniform plasma process result.
In practical application, above-mentioned apparatus for processing plasma for example can be a plasma etching equipment.
It is understandable that above execution mode only is the illustrative embodiments that adopts for principle of the present invention is described, yet the present invention is not limited thereto.For the one of ordinary skilled in the art, under the situation that does not break away from spirit of the present invention and essence, can make various modification and improvement, these modification also are regarded as protection scope of the present invention with improving.
Claims (10)
1. medium window; Be used for inductance-coupled coil being installed at apparatus for processing plasma; It is characterized in that the upper surface of said medium window has the be installed portion suitable with the shape of said inductance-coupled coil, said inductance-coupled coil can be fixed in the said portion that is installed.
2. medium window according to claim 1 is characterized in that, the said portion of being installed comprises and the suitable groove of the shape of said inductance-coupled coil.
3. medium window according to claim 2 is characterized in that, the deep equality of each position in the said groove, and the degree of depth of said groove between the height of said inductance-coupled coil 1/4～3/4 between.
4. medium window according to claim 3 is characterized in that, the cell wall of said groove is through smooth treatment.
5. according to any described medium window among the claim 1-4, it is characterized in that the material that said medium window adopted comprises quartz, pottery.
6. an inductance-coupled coil assembly comprises medium window and the inductance-coupled coil that is arranged at the medium window upper surface, it is characterized in that said medium window comprises any described medium window among the claim 1-5, is used for said inductance-coupled coil is fixed.
7. an apparatus for processing plasma comprises processing chamber, it is characterized in that, above said processing chamber, is provided with any described medium window among the claim 1-5, in order to installation, fixed inductance coupling coil.
8. apparatus for processing plasma according to claim 7 is characterized in that said apparatus for processing plasma comprises plasma etching equipment.
9. an apparatus for processing plasma comprises processing chamber, it is characterized in that, above said processing chamber, is provided with the described inductance-coupled coil assembly of claim 6, in order in processing chamber, to apply radio-frequency power.
10. apparatus for processing plasma according to claim 9 is characterized in that said apparatus for processing plasma comprises plasma etching equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106222093A CN102548180A (en) | 2010-12-27 | 2010-12-27 | Medium window, inductive coupling coil assembly, and plasma processing equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106222093A CN102548180A (en) | 2010-12-27 | 2010-12-27 | Medium window, inductive coupling coil assembly, and plasma processing equipment |
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| CN102548180A true CN102548180A (en) | 2012-07-04 |
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| CN2010106222093A Pending CN102548180A (en) | 2010-12-27 | 2010-12-27 | Medium window, inductive coupling coil assembly, and plasma processing equipment |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109036817A (en) * | 2017-06-08 | 2018-12-18 | 北京北方华创微电子装备有限公司 | Inductance-coupled coil and processing chamber |
| CN109148073A (en) * | 2017-06-16 | 2019-01-04 | 北京北方华创微电子装备有限公司 | Coil block, plasma producing apparatus and plasma apparatus |
| CN110047728A (en) * | 2019-03-26 | 2019-07-23 | 上海华力微电子有限公司 | A kind of insulating base and dry etching equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109148073A (en) * | 2017-06-16 | 2019-01-04 | 北京北方华创微电子装备有限公司 | Coil block, plasma producing apparatus and plasma apparatus |
| CN110047728A (en) * | 2019-03-26 | 2019-07-23 | 上海华力微电子有限公司 | A kind of insulating base and dry etching equipment |
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Application publication date: 20120704 |