JP2002124399A - Plasma generation device - Google Patents
Plasma generation deviceInfo
- Publication number
- JP2002124399A JP2002124399A JP2000314281A JP2000314281A JP2002124399A JP 2002124399 A JP2002124399 A JP 2002124399A JP 2000314281 A JP2000314281 A JP 2000314281A JP 2000314281 A JP2000314281 A JP 2000314281A JP 2002124399 A JP2002124399 A JP 2002124399A
- Authority
- JP
- Japan
- Prior art keywords
- coil
- coils
- plasma
- present
- plasma generation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、プラズマを用いて
薄膜成膜又はエッチングする装置に用いるプラズマ生成
装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma generating apparatus used for an apparatus for forming or etching a thin film using plasma.
【０００２】[0002]
【従来の技術】従来、この種の装置は、誘導コイルを平
面状又は螺旋状に立体的に形成してプラズマ生成する
際、そのプラズマを用いてＣＶＤまたはエッチングなど
の処理を行う場合には、処理の均一性を向上させるため
に、プラズマ生成装置は固定で、処理基板とプラズマ生
成装置間の距離を処理基板ホルダを移動させることによ
り可変として調整したり、誘導コイルそのものの形状を
三次元的に変化させることを行っていた。2. Description of the Related Art Conventionally, this type of apparatus has a problem that when an induction coil is formed three-dimensionally in a planar or spiral shape to generate plasma, when plasma or CVD or the like is performed using the plasma, In order to improve processing uniformity, the plasma generator is fixed, and the distance between the processing substrate and the plasma generator can be adjusted by moving the processing substrate holder, or the shape of the induction coil itself can be three-dimensional. Was going to change.
【０００３】[0003]
【発明が解決しようとする課題】しかし、前述した従来
の装置は、処理基板ホルダを可変する機構を設けると、
その機構は複雑なものとなるとともに、特に枚葉式の処
理装置では、基板処理毎に処理基板ホルダを基板搬送位
置まで移動しなければならず、スループットの面からも
問題があった。また、搬送位置で、基板ホルダを可変す
る際、外気とプラズマ処理室間の気密保持のために一般
的には溶接ベローズを用いるが、前記べローズには寿命
があるため、定期的に交換作業が発生し、作業費用や、
装置のダウンタイムが発生するという点で問題があっ
た。更に、前記べローズは消耗品ではあり、高価なもの
であるから、装置のメンテナンス費用が基板ホルダ固定
のものよりかかるという問題もある。一方、誘導コイル
形状や、その配置位置を可変とする機構を設けると、処
理基板ホルダを動作させる場合と同様にその機構は複雑
なものとなると共に、コイルには一般的に数〜数十メガ
ヘルツの高周波を印加するので、前記配置位置可変機構
の電気的絶縁は難しく、絶縁用機構部からのコイル投入
電力のロスが発生し、効率が悪くなるという問題もあ
る。However, in the above-mentioned conventional apparatus, if a mechanism for changing the processing substrate holder is provided,
The mechanism becomes complicated, and in particular, in a single-wafer processing apparatus, the processing substrate holder must be moved to the substrate transfer position every time the substrate is processed, which has a problem in terms of throughput. When the substrate holder is changed at the transfer position, a welding bellows is generally used to maintain the airtightness between the outside air and the plasma processing chamber. Costs, work costs,
There is a problem in that downtime of the device occurs. Further, since the bellows are consumables and expensive, there is a problem that the maintenance cost of the apparatus is higher than that of the apparatus fixed to the substrate holder. On the other hand, when a mechanism for changing the shape of the induction coil and the arrangement position thereof is provided, the mechanism becomes complicated as in the case of operating the processing substrate holder, and the coil generally has several to several tens of megahertz. Since the high frequency is applied, it is difficult to electrically insulate the variable arrangement position mechanism, and there is also a problem that a loss of power supplied to the coil from the insulating mechanism occurs and the efficiency is deteriorated.
【０００４】本発明の課題は、構造がシンプルであり、
製作コスト及び維持コストが低廉である、処理基板の均
一性を調整することができるプラズマ生成装置を提供す
ることである。An object of the present invention is to simplify the structure,
An object of the present invention is to provide a plasma generation apparatus capable of adjusting the uniformity of a processing substrate, the production cost and the maintenance cost of which are low.
【０００５】[0005]
【課題を解決するための手段】前記課題を解決するため
に、請求項１の発明は、誘導結合型のプラズマ生成装置
において、誘導コイル（１１、１２、２１、２２、３
１、３２、３３）を複数本含み、それぞれのコイルに流
れる電流制御を行う制御手段（１０、２０、３０）を備
えたことを特徴とするプラズマ生成装置である。In order to solve the above-mentioned problems, the present invention is directed to an inductively-coupled plasma generating apparatus, wherein an induction coil (11, 12, 21, 22, 3) is provided.
1, 32, 33) and a control means (10, 20, 30) for controlling the current flowing through each coil.
【０００６】請求項２の発明は、請求項１に記載のプラ
ズマ生成装置において、前記制御手段は（１０）、前記
誘導コイル（１１、１２）の少なくとも１つと直列にコ
ンデンサ（１５）を接続したことを特徴とするプラズマ
生成装置である。According to a second aspect of the present invention, in the plasma generating apparatus according to the first aspect, the control means (10) connects a capacitor (15) in series with at least one of the induction coils (11, 12). A plasma generating apparatus characterized in that:
【０００７】請求項３の発明は、請求項１に記載のプラ
ズマ生成装置において、前記制御手段（２０）は、前記
誘導コイル（２１、２２）の少なくとも１つと直列にイ
ンダクタ（２５）を接続したことを特徴とするプラズマ
生成装置である。According to a third aspect of the present invention, in the plasma generating apparatus according to the first aspect, the control means (20) connects an inductor (25) in series with at least one of the induction coils (21, 22). A plasma generating apparatus characterized in that:
【０００８】請求項４の発明は、請求項１から請求項３
までのいずれか１項に記載のプラズマ生成装置におい
て、前記誘導コイル（３１、３２、３３）は、螺旋状に
複数ターン巻いてあるコイル（３１）と、そのコイルと
並列接続された少なくとも１本の１ターンコイル（３
２、３３）とを含み、前記制御手段（３０）は、それぞ
れのコイル電流を制御する構造となっていることを特徴
とするプラズマ生成装置である。[0008] The invention of claim 4 is the first to third aspects of the present invention.
In the plasma generating apparatus according to any one of the above, the induction coil (31, 32, 33) includes a coil (31) spirally wound a plurality of turns and at least one coil connected in parallel with the coil. 1 turn coil (3
2, 33), wherein the control means (30) has a structure for controlling respective coil currents.
【０００９】[0009]
【発明の実施の形態】以下、図面等を参照しながら、本
発明の実施の形態について、更に詳しく説明する。 （第１実施形態）図１は、本発明によるプラズマ生成装
置の第１実施形態の回路図である。第１実施形態では、
２本の１ターンコイル１１、１２を並列接続して平面状
に配置した場合に、そのうちの内側のコイル１１に電流
制御用のチューニングコンデンサ１５を直列接続してい
る。コイル１１、１２及びチューニングコンデンサ１５
は、インピーダンス整合器２を介して、高周波電源１と
接続されている。Embodiments of the present invention will be described below in more detail with reference to the drawings. (First Embodiment) FIG. 1 is a circuit diagram of a first embodiment of a plasma generating apparatus according to the present invention. In the first embodiment,
When two one-turn coils 11 and 12 are connected in parallel and arranged in a plane, a tuning capacitor 15 for current control is connected in series to the inner coil 11 of them. Coils 11, 12 and tuning capacitor 15
Are connected to the high-frequency power supply 1 via the impedance matching device 2.
【００１０】コンデンサ１５を挿入しない場合、内側の
コイル１１は、外側コイル１２よりインダクタンスが小
さいため、電流が多く流れる。電流が流れる比は、各コ
イル１１、１２ごとのインピーダンスに反比例するから
である。一方、コイル１１、１２が発生する磁場強度は
流れる電流に比例し、特にコイル１１、１２の中心では
コイル直径に反比例する。従って、内側のコイル１１に
電流制御用のコンデンサ１５を直列接続した場合は、前
記２本のコイル１１、１２を用いて生成させるプラズマ
の、コイル中心付近の密度を低減するような調整を行う
ことになる。When the capacitor 15 is not inserted, the inner coil 11 has a smaller inductance than the outer coil 12, so that a large amount of current flows. This is because the ratio at which the current flows is inversely proportional to the impedance of each of the coils 11 and 12. On the other hand, the strength of the magnetic field generated by the coils 11 and 12 is proportional to the flowing current, and is particularly inversely proportional to the coil diameter at the center of the coils 11 and 12. Therefore, when the current control capacitor 15 is connected in series to the inner coil 11, it is necessary to adjust the density of the plasma generated using the two coils 11, 12 near the center of the coil. become.
【００１１】図２、図３及び図４に、磁場強度分布に対
するプラズマ密度の空間分布を示す。磁場強度分布は、
各コイル１１、１２が発生する磁場をそれぞれ示してい
る。放電条件は、Ａｒガス１００ｓcｃｍ、圧力５０ｍ
Ｔｏｒｒ、高周波周波数１３．５６ＭＨｚ、出力１００
０Ｗである。プラズマ密度分布を示した図中の黒塗りつ
ぶしの丸は、コイル１１、１２から４０ｍｍ離れた場所
での分布、白抜きの丸は１００ｍｍ離れた場所での分布
をそれぞれ示す。図２は各コイル１１、１２電流値を
１：１とした場合であり、図３は外側コイル１２：内側
コイル１１＝２：１の電流比とした場合である。図４は
外側コイル１２：内側コイル１１＝１：２の電流比とし
た場合である。FIGS. 2, 3 and 4 show the spatial distribution of the plasma density with respect to the magnetic field intensity distribution. The magnetic field strength distribution is
The magnetic field generated by each of the coils 11 and 12 is shown. The discharge conditions were Ar gas 100 sccm, pressure 50 m.
Torr, high frequency 13.56 MHz, output 100
0W. In the figure showing the plasma density distribution, solid black circles indicate the distribution at a location 40 mm away from the coils 11 and 12, and white circles indicate the distribution at a location 100 mm away from the coils 11, 12, respectively. FIG. 2 shows the case where the current values of the coils 11 and 12 are 1: 1, and FIG. 3 shows the case where the current ratio is such that the outer coil 12 and the inner coil 11 = 2: 1. FIG. 4 shows a case where the current ratio is such that the outer coil 12: the inner coil 11 = 1: 2.
【００１２】図２から図４に示すように、プラズマの密
度分布は、コイル磁界分布によって大きく変化し、コイ
ル電流の調整によって均一な分布の位置、すなわちコイ
ル１１、１２からの距離を変化させることができる。コ
イル電流を調整するコンデンサ１５は、容量固定であっ
ても容量可変であってもよい。As shown in FIG. 2 to FIG. 4, the density distribution of the plasma is largely changed by the coil magnetic field distribution, and the position of the uniform distribution, that is, the distance from the coils 11 and 12 is changed by adjusting the coil current. Can be. The capacitor 15 for adjusting the coil current may have a fixed capacity or a variable capacity.
【００１３】（第２実施形態）図５は、本発明によるプ
ラズマ生成装置の第２実施形態のプラズマ生成ユニット
を示した回路図である。第２実施形態では、コイル電流
を調節するために、第１実施形態のコンデンサ１５の代
わりに補助コイル２５を設けたものである。容量可変の
コイルを設けることは、印加する高周波周波数によって
はコイルが非常に大きくなったり、コイルの発熱の問題
から水冷を施す必要があるため、調整機構が難しくなる
場合がある。従って、コイルを用いる場合は、容量固定
である方が望ましい。(Second Embodiment) FIG. 5 is a circuit diagram showing a plasma generating unit of a second embodiment of the plasma generating apparatus according to the present invention. In the second embodiment, an auxiliary coil 25 is provided instead of the capacitor 15 of the first embodiment to adjust the coil current. Providing a coil with a variable capacity may make the adjustment mechanism difficult because the coil becomes very large depending on the applied high frequency frequency, or it is necessary to perform water cooling due to the problem of heat generation of the coil. Therefore, when a coil is used, it is desirable that the capacity be fixed.
【００１４】（第３実施形態）図６は、本発明によるプ
ラズマ生成装置の第３実施形態のユニットを示した図で
ある。第３実施形態では、中央コイルは螺旋状に２ター
ンしたコイル３１を用い、その外側に２本の１ターンコ
イル３２、３３を配置した誘導結合方式のプラズマ生成
コイルユニットを用いる。これは、最外周のコイル直径
は４００ｍｍであり、φ１２インチクラスのシリコン基
板を処理する装置用のプラズマ生成ユニットである。な
お、２は、インピーダンス整合器、３は、高周波導入プ
レート、４は、シールドカバーである。(Third Embodiment) FIG. 6 is a view showing a unit of a third embodiment of the plasma generating apparatus according to the present invention. In the third embodiment, an inductively-coupled plasma generation coil unit in which a central coil uses a coil 31 that has two turns in a spiral shape and two one-turn coils 32 and 33 are arranged outside the coil 31 is used. This is a plasma generation unit for an apparatus which processes a silicon substrate of a φ12 inch class with an outermost coil diameter of 400 mm. In addition, 2 is an impedance matching device, 3 is a high frequency introduction plate, and 4 is a shield cover.
【００１５】図７は、本発明によるプラズマ生成装置の
第３実施形態を示した回路図である。第３実施形態で
は、螺旋状に複数２ターン巻いてあるコイル３１と２本
の１ターンコイル３２、３３を並列接続して平面状に配
置した場合に、それぞれのコイル３１、３２、３３に電
流制御用のチューニングコンデンサ３５、３６、３７を
直列接続している。FIG. 7 is a circuit diagram showing a third embodiment of the plasma generating apparatus according to the present invention. In the third embodiment, when the coil 31 wound a plurality of turns two times in a spiral and two one-turn coils 32 and 33 are connected in parallel and arranged in a plane, a current is applied to each of the coils 31, 32 and 33. Tuning capacitors 35, 36 and 37 for control are connected in series.
【００１６】図８は、本発明によるプラズマ生成装置の
第３実施形態において、最適化した場合の磁場強度分布
をあらわしている。第３実施例の磁場強度分布におい
て、Ｃ 4 Ｆ8 、ＣＨ2 Ｆ2 、Ａｒ及びＯ2 の混合ガスを
用いて放電し、ＳｉＯ2 膜をエッチングしたところ、１
２インチ基板において面内エッチングレート±２％以下
という結果が得られた。FIG. 8 shows a plasma generating apparatus according to the present invention.
In the third embodiment, the magnetic field intensity distribution when optimized
It represents. In the magnetic field intensity distribution of the third embodiment
And C FourF8, CHTwoFTwo, Ar and OTwoGas mixture
Discharge using SiOTwoAfter etching the film,
In-plane etching rate ± 2% or less for 2-inch substrate
The result was obtained.
【００１７】（変形形態）以上説明した実施形態に限定
されることなく、種々の変形や変更が可能であって、そ
れらも本発明の均等の範囲内である。例えば、図７にお
いてチューニングコンデンサ３５、３６、３７をチュー
ニングコイル２５で置き換えてもよい。(Modifications) Various modifications and changes are possible without being limited to the above-described embodiment, and they are also within the equivalent scope of the present invention. For example, the tuning capacitors 35, 36, and 37 in FIG.
【００１８】[0018]
【発明の効果】以上詳しく説明したように、本発明によ
れば、誘導コイルを複数本含む誘導結合式のプラズマ生
成装置に対し、それぞれのコイルに流れる電流制御を行
うことによって、コイルが発生する磁界の強度分布を変
化させてプラズマの空間密度分布を変化させ、処理基板
の均一性を調節できるようにした。本発明では、コイル
の移動機構が不要であるから、その構造はシンプルであ
る。更に、被処理基板を移動させる機構も不要であるか
ら、本発明のプラズマ生成装置を配したプラズマ処理装
置の構造は簡単にでき、製作コストを削減できると共
に、消耗品も少なくできる。また、基板搬送位置が固定
のため容易に搬送出来るとに共に、高い信頼性の装置と
することができる。As described above in detail, according to the present invention, the coils are generated by controlling the current flowing through each of the coils in the inductively coupled plasma generation apparatus including a plurality of induction coils. The spatial density distribution of the plasma is changed by changing the intensity distribution of the magnetic field, so that the uniformity of the processing substrate can be adjusted. In the present invention, the structure is simple because no coil moving mechanism is required. Further, since a mechanism for moving the substrate to be processed is not required, the structure of the plasma processing apparatus provided with the plasma generating apparatus of the present invention can be simplified, the production cost can be reduced, and consumables can be reduced. In addition, since the substrate transfer position is fixed, the device can be easily transferred, and a highly reliable device can be obtained.
【図１】本発明によるプラズマ生成装置の第１実施形態
の回路図である。FIG. 1 is a circuit diagram of a first embodiment of a plasma generation device according to the present invention.
【図２】本発明の第１実施形態の実験結果を示すグラフ
である。FIG. 2 is a graph showing experimental results of the first embodiment of the present invention.
【図３】本発明の第１実施形態の実験結果を示すグラフ
である。FIG. 3 is a graph showing experimental results of the first embodiment of the present invention.
【図４】本発明の第１実施形態の実験結果を示すグラフ
である。FIG. 4 is a graph showing experimental results of the first embodiment of the present invention.
【図５】本発明によるプラズマ生成装置の第３実施形態
のプラズマ生成ユニットを示した図である。FIG. 5 is a diagram showing a plasma generation unit of a third embodiment of the plasma generation device according to the present invention.
【図６】本発明によるプラズマ生成装置の第３実施形態
を示した図である。FIG. 6 is a view showing a third embodiment of the plasma generating apparatus according to the present invention.
【図７】本発明によるプラズマ生成装置の第３実施形態
を示した回路図であるFIG. 7 is a circuit diagram showing a third embodiment of the plasma generation device according to the present invention.
【図８】本発明の第３実施形態の実験結果を示すグラフ
である。FIG. 8 is a graph showing experimental results of the third embodiment of the present invention.
１ 高周波電源 ２ インピーダンス整合器 １０、２０、３０ 制御手段 １１、１２、２１、２２、３１、３２、３３ 誘導コイ
ル １５、３５、３６、３７ チューニングコンデンサ ２５ チューニングコイルDESCRIPTION OF SYMBOLS 1 High frequency power supply 2 Impedance matching device 10, 20, 30 Control means 11, 12, 21, 22, 31, 32, 33 Induction coil 15, 35, 36, 37 Tuning capacitor 25 Tuning coil
Claims (4)
て、 誘導コイルを複数本含み、それぞれのコイルに流れる電
流制御を行う制御手段を備えたことを特徴とするプラズ
マ生成装置。1. An inductively coupled plasma generating apparatus, comprising: a plurality of induction coils; and control means for controlling a current flowing through each of the coils.
いて、 前記制御手段は、前記誘導コイルの少なくとも１つと直
列にコンデンサを接続したことを特徴とするプラズマ生
成装置。2. The plasma generation apparatus according to claim 1, wherein said control means connects a capacitor in series with at least one of said induction coils.
いて、 前記制御手段は、前記誘導コイルの少なくとも１つと直
列にインダクタを接続したことを特徴とするプラズマ生
成装置。3. The plasma generation apparatus according to claim 1, wherein said control means connects an inductor in series with at least one of said induction coils.
項に記載のプラズマ生成装置において、 前記誘導コイルは、螺旋状に複数ターン巻いてあるコイ
ルと、そのコイルと並列接続された少なくとも１本の１
ターンコイルとを含み、 前記制御手段は、それぞれのコイル電流を制御する構造
となっていることを特徴とするプラズマ生成装置。4. One of claims 1 to 3
In the plasma generation device described in the paragraph, the induction coil includes a coil that is spirally wound a plurality of turns, and at least one coil connected in parallel with the coil.
And a turn coil, wherein the control means has a structure for controlling respective coil currents.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000314281A JP2002124399A (en) | 2000-10-13 | 2000-10-13 | Plasma generation device |
| KR1020000069271A KR20020029589A (en) | 2000-10-13 | 2000-11-21 | Plazma generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000314281A JP2002124399A (en) | 2000-10-13 | 2000-10-13 | Plasma generation device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002124399A true JP2002124399A (en) | 2002-04-26 |
Family
ID=18793569
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000314281A Pending JP2002124399A (en) | 2000-10-13 | 2000-10-13 | Plasma generation device |
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| Country | Link |
|---|---|
| JP (1) | JP2002124399A (en) |
| KR (1) | KR20020029589A (en) |
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| CN102548180A (en) * | 2010-12-27 | 2012-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Medium window, inductive coupling coil assembly, and plasma processing equipment |
| KR20120112184A (en) * | 2011-03-29 | 2012-10-11 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus and plasma processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101040541B1 (en) * | 2004-02-25 | 2011-06-16 | 주성엔지니어링(주) | Hybrid antenna for plasma |
-
2000
- 2000-10-13 JP JP2000314281A patent/JP2002124399A/en active Pending
- 2000-11-21 KR KR1020000069271A patent/KR20020029589A/en not_active Application Discontinuation
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| Publication number | Publication date |
|---|---|
| KR20020029589A (en) | 2002-04-19 |
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