TWI439186B - Compound plasma source and method for dissociating gases using the same - Google Patents

Description

Source of compound plasma and method of using the same to dissociate gas

The present invention relates to a source of plasma for generating an active gas by plasma discharge, and more particularly to a source of a plasma of a compound using a structural device for producing a capacitively coupled plasma and an inductively coupled plasma in a composite manner.

The plasma discharge is used for a gas excitation to generate an active gas containing ions, radicals, atoms, molecules, and the like. These reactive gases are used in a variety of applications, typically in semiconductor processes such as etching, deposition, cleaning, and the like.

There are several sources of plasma used to generate plasma. For example, capacitive coupling plasmas and inductively coupled plasmas that use frequent ratios are generally used.

As is well known, because of the ability to accurately adjust a capacitive coupling and ion, a capacitively coupled plasma source has a higher process throughput than other plasma sources. In another aspect, since the energy of the RF power source is coupled to the plasma via a proprietary capacitive coupling, the plasma ion density can be increased or decreased by merely increasing or decreasing the capacitively coupled RF power. However, since the increased power brings about an increased ion impact energy, there is a limit to prevent damage due to the ion impact.

In addition, the source of the inductively coupled plasma can easily increase the ion density as the RF power source increases. Because of this, it is known that the inductively coupled plasma source is relatively low and suitable to obtain a high density plasma. However, since an inductor coil cannot control most or all of the plasma ion energy, it must A separate individual device is required to control the plasma ion energy. For example, there is a biasing technique to apply a separate RF to a substrate support disposed in the processing chamber. However, since it is difficult to control the plasma ion energy due to the bias applied to the substrate support, the biasing technique has the disadvantage of a low process productivity.

At the same time, the size of a wafer or liquid crystal display (LCD) glass substrate used to fabricate a semiconductor device is gradually increasing. Thus, it is necessary to develop an extendable plasma source, and to control the plasma ion energy, and to process a large-sized glass substrate.

Accordingly, the present invention has been made in view of the above problems, and an aspect of the present invention provides an extendable source of a plasma of a compound which has controllable power by virtue of the advantages of inductively coupled plasma and capacitively coupled plasma. Plasma ion energy and high ability to treat plasma in a wide area; and a gas dissociation method for producing an active gas using the plasma source of the compound.

According to one aspect of the invention, the object of the invention can be accomplished by the preparation of a source of a plasma of a compound.

The plasma source of the compound may comprise a body to form a plasma discharge chamber and comprising a first capacitive coupling electrode made of a conductive metal; a transformer comprising a magnetic body to be coupled to the plasma discharge chamber Core and primary winding, Forming an inductively coupled plasma in the plasma discharge chamber; a magnetic core protection tube surrounding the magnetic core positioned in the plasma discharge chamber; and a second capacitive coupling electrode mounted on the magnetic The core protects the tube.

Preferably, the first capacitive coupling electrode may comprise an insulating region that forms an electrical discontinuity such that the eddy current is minimized.

Preferably, the second capacitive coupling electrode may comprise an insulating region forming an electrical discontinuity such that the eddy current is minimized.

Preferably, the compound plasma source may further comprise a first power source for supplying power to the primary winding of the transformer for generating an inductively coupled plasma; and a second power source for supplying power to the The first capacitive coupling electrode or the second capacitive coupling electrode is configured to generate a capacitive coupling plasma.

Preferably, the compound plasma source may further comprise a first impedance adapter connected to the output end of the first power source; and a second impedance adapter connected to the output end of the second power source.

Preferably, the plasma source of the compound may further comprise a common power source for supplying power for generating the capacitive coupling plasma to the first capacitive coupling electrode or to the second capacitive coupling electrode, and Supplying power to the inductively coupled plasma to the primary winding of the transformer; and a power distributor to distribute the power to the first capacitive coupling electrode or to the second capacitive coupling electrode, and the original of the transformer Winding.

Preferably, the plasma source of the compound may further comprise a common power source for supplying power for generating the capacitive coupling plasma to the first capacitive coupling electrode or to the second capacitive coupling electrode, and The power for generating the inductively coupled plasma is supplied to the primary winding of the transformer, and the first capacitor is coupled to the power The pole or the second capacitive coupling electrode and the primary winding of the transformer may be connected in series to the common power source.

Preferably, the plasma source of the compound may further comprise an impedance adapter coupled to the output end of the common power source.

Preferably, the core protection tube may comprise a dielectric material.

Preferably, the plasma source of the compound may further comprise a coolant supply channel installed in the core protection tube.

Preferably, the plasma source of the compound may further comprise a coolant supply channel formed in a central region of the magnetic core.

Preferably, the plasma source of the compound may further comprise a gas inlet through which the gas system is introduced into the plasma discharge chamber; a gas outlet through which the gas system is discharged; and a processing chamber to accommodate A plasma discharged through the gas outlet and including a substrate support mounted therein.

Preferably, the substrate support can be coupled to a biasing power source.

Preferably, the plasma source of the compound may further comprise a substrate support positioned in the plasma discharge chamber to load a substrate to be processed, and the substrate support may be connected to a biasing power source.

Preferably, the plasma source of the compound may further comprise a first switch for switching the second capacitive coupling electrode between the second power source and the ground; and a second switch for the biasing power supply and The substrate support is switched between the grounds, and the first switch and the second switch can be associated with each other in a reverse operating relationship.

According to another aspect of the present invention, there is provided a compound using electricity The method by which the slurry source dissociates the gas. The method includes: providing a body to form a plasma discharge chamber, and including a first capacitive coupling electrode made of a conductive metal; providing a transformer including a magnetic body to be coupled to the plasma discharge chamber a core and a primary winding for generating an inductively coupled plasma in the plasma discharge chamber; a magnetic core protection tube for surrounding a magnetic core positioned in the plasma discharge chamber; and an installation provided on the magnetic core protection a second capacitor in the tube is coupled to the electrode; and a compound plasma is generated. The compound plasma is capacitively coupled by driving the first and second capacitive coupling electrodes and inductively coupled by driving the transformer.

Preferably, the first and second capacitive coupling electrodes are driven to provide an initial ionization operation prior to driving the transformer.

Preferably, the gas system is selected from the group consisting of an inert gas, a reactive gas, and a gas mixture of the inert gas and the reactive gas.

According to the source of the plasma of the compound of the present invention and the method of using the source to dissociate the gas, since all of the advantages of the inductively coupled plasma and the capacitively coupled plasma are employed, it is possible to provide an extendable source of the plasma of the compound, It has the ability to precisely control the plasma ion energy and process large-sized design objects, and to provide a gas dissociation method for generating an active gas.

Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings. Will more fully describe an atmospheric plasma generator and one with the atmospheric electricity Atmospheric plasma processing system for slurry generators.

1 is a cross-sectional view showing a source of a plasma of a compound according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line A-A of FIG.

Referring to Figures 1 and 2, a compound plasma source 10 in accordance with an embodiment of the present invention uses the inductively coupled plasma and the capacitively coupled plasma to dissociate the gases and produce the reactive gas.

The compound plasma source 10 includes a magnetic core 31 to produce the inductively coupled plasma; and a transformer 30 having a primary winding 32. The magnetic core 31 is a toroidal ferromagnetic core and has a primary winding 32 wound thereon to form the transformer 30.

The magnetic core 31 is made of a ferromagnetic material or another material selected from iron, air, and the like. In particular, the magnetic core 31 is coupled to a body 20 such that a portion of the magnetic core 31 is placed inside the body 20 to form a plasma discharge chamber 21. The portion of the magnetic core 31 placed in the plasma discharge chamber 21 is protected by a core protection tube 33. The core protection tube 33 is preferably made of quartz, ceramic, and dielectric material. Both ends of the core protection tube 33 are connected to the apertures 22 formed in the side walls of the body 20 to face each other. The core protection tube 33 and the aperture 22 of the side wall to which the body 20 is attached are sealed by a suitable sealing member (not shown).

The body 20 is made of a metal material such as aluminum, stainless steel, copper or the like. The body 20 can also be made of a coated metal such as anodized aluminum or nickel coated aluminum. The body 20 can also be made of refractory metal to make. Alternatively, a generator body 20 can be made of an insulating material such as quartz, ceramic, or the like, and can be made of any suitable material in which a desired plasma process is performed. The body 20 is all formed into a hollow cylindrical shape. However, it can be understood that the body 20 can be modified into a box shape or other various shapes.

The primary winding 32 is electrically coupled to a first power source 50. The first power source 50 is an alternating current (AC) power source to supply RF power. Even if not shown in the drawings, an output end of the first power source 50 can have an impedance adapter to match the impedance.

However, those skilled in the art will appreciate that the first power supply can be constructed by an RF power supply having a controllable output voltage without an additional impedance adapter.

The compound plasma source 10 includes first and second capacitive coupling electrodes 20 and 40 to produce the capacitively coupled plasma. The first capacitive coupling electrode 20 includes a body 20 having a conductive metal. In this embodiment, since the body 20 functions as the first capacitive coupling electrode 20, the body 20 and the first capacitive coupling electrode are assigned the same reference numerals. However, it has been noted that the first capacitive coupling electrode 20 can be made of an additional conductive metal to be constructed around the body 20, and a specific portion of the body 20 on which the conductive metal is mounted can form a dielectric layer. Electric window.

The second capacitive coupling electrode 40 is mounted inside the magnetic core protection tube 33. Preferably, the second capacitive coupling electrode 40 has a cylindrical shape to surround the entire magnetic core 31 into which the magnetic core protection tube 33 has been inserted. The second capacitive coupling electrode 40 can be coupled to the first capacitive coupling electrode 20 Made with the same materials.

The second capacitive coupling electrode 40 is electrically connected to the second power source 51, and the first capacitive coupling electrode 20 is grounded.

The first capacitive coupling electrode 20 serves as a cathode, and the second capacitive coupling electrode 40 serves as an anode. However, its functionality can be exchanged if needed.

The second power source 51 is an AC power source to supply an RF power. Although not shown in the drawings, an impedance adapter for the impedance matching can be mounted at the output end of the second power source 51. However, those skilled in the art will appreciate that the second power source can be configured to form an RF power source having a controllable output voltage without the additional impedance adapter.

The first and second capacitive coupling electrodes 20 and 40 respectively include insulating regions 22 and 41 to form the electrical discontinuity to minimize eddy currents due to the inductively coupled plasma.

When the first and second power sources 50 and 51 respectively supply power to the compound plasma source 10, a first annular electric field 35 and a second radial electric field 42 are generated in the plasma discharge chamber 21, such as by 1 and the broken lines in Fig. 2 are indicated separately. Thus, the capacitively coupled plasma and the inductively coupled plasma are produced in the plasma discharge chamber 21 in a composite pattern.

The first electric field 35 is induced by the transformer 30, and the second electric field 42 is generated by the first and second capacitive coupling electrodes 20 and 40. In other words, due to a magnetic field 34 flowing along the core 31 through the primary winding 32, the annular first electric field 35 is induced to surround the entire magnetic core placed in the plasma discharge chamber 21. Protection tube 33. The first The electric field 35 produces the inductively coupled plasma to complete the second loop of the transformer 30.

As described above, the capacitively coupled plasma and the inductively coupled plasma are produced in the plasma discharge chamber 21 in a composite manner. In particular, since the first electric field 35 intersects the second electric field 42 in the vertical direction, the helical motion of the gas ion particles is accelerated in the plasma discharge chamber 21, resulting in a high ability to dissociate the gas.

Therefore, the density of the plasma ions can be easily controlled by controlling the electric power of the first and second power sources 50 and 51. In other words, the density of the plasma ions can be obtained without an excessive increase in the ion energy. In addition, since the first electric field 35 is substantially parallel to the body 20 and the core protection tube 33, the gas ion particles accelerated by the first electric field 35 and the second electric field 42 are collided by the ions. The damage to the inner wall surface of the plasma discharge chamber 21 is minimized, and the generation of harmful particles is minimized.

The gas may be injected into the plasma discharge chamber 21 by a group comprising an inert gas, a reactive gas, or a gas mixture of the inert gas and the reactive gas. The first and second capacitive coupling electrodes 20 and 40 are driven to provide an initial ionization operation prior to driving the transformer 30.

3 through 6 are various views illustrating various modifications of the power source of the compound plasma source 10. The above-mentioned compound plasma source 10 can be modified in various forms as will be described later.

Referring to FIG. 3, as a modification, the compound plasma source 10 can supply the power to the transformer 30 and the first and second capacitive coupling electrodes 20 and 40 via a single shared power source 52. Used for this, a power distributor 53 can be mounted to the output end of the shared power source 52. The power distributor 53 can form a power distribution circuit using a transformer or a parallel capacitor. Further, the power distributor 53 can be constructed in various electronic circuits. If the capacitance of the transformer or the parallel capacitor is variable, the power is appropriately adjusted.

Referring to FIG. 4, as another modification, the compound plasma source 10 can be connected in series to the single shared power source 52 by connecting the transformer 30 and the first and second capacitive coupling electrodes 20 and 40 in series. Architecture. In this case, as illustrated in FIG. 5, the second capacitive coupling electrode 40 can be grounded. The shared power source 52 is an alternating current (AC) power source to supply RF power.

Referring to FIG. 6, as yet another modification, by fabricating the second capacitive coupling electrode 40 in the form of a single wire coil, the compound plasma source 10 can be configured to function as an electrode and an induction coil antenna. .

Thus, the number of RF power sources can be reduced by using the shared power source 52 so that a simple compound plasma source 10 can be fabricated at low cost. Although not shown in the drawings, the end of the second power source 51 can be provided with an impedance adapter to match the impedance. However, those skilled in the art will appreciate that the second power supply can be constructed by an RF power supply having a controllable output voltage without an additional impedance adapter.

Although not shown in the drawings, the compound plasma source 10 includes a coolant supply passage mounted at a suitable location to supply coolant. For example, the coolant supply passage can be installed in the core coolant. The coolant supply passage can be formed by the frame to penetrate the center of the magnetic core 31. The A coolant supply passage can be installed within the body 20. Furthermore, the coolant supply passage can be constructed in the electrode 40 provided in the protective tube 33.

7 and 8 are cross-sectional views showing an example of forming a gas inlet and a gas outlet in the plasma discharge chamber. As illustrated in Figures 7 and 8, the compound plasma source 10 includes a gas inlet 60 through which the gas system is introduced into the plasma discharge chamber 21; and a gas outlet 61 through which the gas system is passed. The plasma discharge chamber 21 is discharged. The gas inlet 60 and the gas outlet 61 are formed at desired positions of the body 20.

Figure 9 is a view of a source of compound plasma applied to a remote plasma processing system in accordance with an embodiment of the present invention. Referring to Figure 9, the compound plasma source 10 is mounted to a plasma processing chamber 70 to construct the remote plasma processing system to remotely provide the plasma.

The processing chamber 70 is connected to the compound plasma source 10, contains the plasma discharged through the gas outlet 61 of the compound plasma source 10, and includes a substrate support 71 to support a placement in the processing chamber 70. Substrate 72. The substrate support 71 can include a deflecting electrode (not shown) coupled to the biasing power source 73 to accelerate the gas ion particles toward the substrate. The substrate support 71 can also include a heater to heat the substrate.

Figure 10 is a view illustrating a source of a compound plasma applied to a processing chamber of a processing substrate in accordance with an embodiment of the present invention. Referring to Figure 10, a compound plasma source 10a can be constructed such that a body 20 is used as a processing chamber. The plasma discharge chamber 21 includes the substrate support 71 to support the substrate 72 therein. The substrate support 71 can include a connection to the bias power source A deflection electrode (not shown) of 73 accelerates the gas ion particles toward the substrate. The substrate support 71 can also include a heater to heat the substrate.

In particular, in this configuration, the second capacitive coupling electrode 40 can be connected to the first switch 55 that switches between the second power source 51 and the ground. Further, the substrate support 71 can be connected to a second switch 75 that switches between the bias power source 73 and the ground. The first and second switches 55 and 75 are operated in reverse relative to each other. The first and second switches 55 and 75 can be three-pole switches including a floating potential.

In FIGS. 9 and 10, the processing chambers 70 and 20 may be an etching chamber for performing the plasma etching, a deposition chamber for performing plasma deposition, or an etching chamber for stripping the photoresist layer. Further, the compound plasma source 10 is useful for treating various materials such as solid surfaces, powders, gases, and the like. In addition, the compound plasma source 10 can function as an ion beam source for injecting ions or for milling the ions. Preferably, in order to utilize the compound plasma source 10 as the source of the ion beam, a suitable ion accelerator is mounted around the gas outlet 61.

Figure 11 is an exemplary view showing an extendable structure of a compound plasma source. As shown in Fig. 11, in a compound plasma source 10b, a magnetic core 31 can be mounted to the plasma discharge chamber 21 such that the parts of the magnetic core 31 to be positioned in the plasma discharge chamber 21 are parallel to each other. In this case, the two core protection tube 33 and the second capacitance coupling electrode 40 are respectively mounted in the plasma discharge chamber 21. With this configuration installed, the compound plasma source 10b can be extended. Further, when the length of the magnetic core 31 is elongated, An entire area that produces the plasma can be extended. Because of this extension, the plasma source of the compound according to the present invention is well suited for producing the plasma in a wide, high density region, and the plasma ion energy can be easily adjusted.

While the invention has been shown and described, it will be understood by those skilled in the art And its equivalent.

Industrial utilization

As described above, according to the source of the plasma of the compound of the present invention and the method of using the source to dissociate the gas, an extendable source of the plasma is provided with a high ability to control the plasma ion energy, and can be adapted by the inductance. The advantages of coupled plasma and the capacitively coupled plasma handle a wide area of plasma. In addition, the method uses a source of the extensible compound plasma to dissociate an active gas.

The source of the plasma of the compound of the present invention and the method of using the source to dissociate the gas can be used in the process of depositing the plasma, etching the photoresist layer, and treating various materials such as solid surfaces, powders, gases, and the like. Furthermore, the compound plasma source and the method of dissociating the gas can be used as an ion beam source for injecting the ions and for milling the ions.

10‧‧‧Company plasma source

10a‧‧‧Company plasma source

10b‧‧‧The source of compound plasma

20‧‧‧ body

20‧‧‧First Capacitor Coupling Electrode

21‧‧‧ Plasma discharge room

22‧‧‧ aperture

22‧‧‧Insulated area

30‧‧‧Transformers

31‧‧‧ magnetic core

32‧‧‧Original winding

33‧‧‧Magnetic core protection tube

34‧‧‧ magnetic field

35‧‧‧First ring electric field

40‧‧‧Second capacitor coupling electrode

41‧‧‧Insulated area

42‧‧‧second radial electric field

50‧‧‧First power supply

51‧‧‧second power supply

52‧‧‧Common power supply

53‧‧‧Power distributor

55‧‧‧First switch

60‧‧‧ gas inlet

61‧‧‧ gas export

70‧‧‧Processing room

71‧‧‧Substrate support

72‧‧‧Substrate

73‧‧‧ biased power supply

75‧‧‧second switch

These and/or other aspects and advantages of the present invention will become apparent and more readily apparent from the following description of the specific embodiments. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing a source of a plasma of a compound according to an embodiment of the present invention; FIG. 2 is a cross-sectional view taken along line AA of FIG. 1; and FIGS. 3 to 6 are views showing Various modifications of the power source of the compound plasma according to an embodiment of the present invention; FIGS. 7 and 8 are cross-sectional views illustrating an example of forming a gas inlet and a gas outlet in a plasma discharge chamber; FIG. 9 is a view illustrating A source of a compound plasma applied to a remote plasma processing system in accordance with an embodiment of the present invention; and FIG. 10 is a view illustrating a source of a compound plasma applied to a processing chamber of a substrate in accordance with an embodiment of the present invention; And Figure 11 is an exemplary view illustrating an extendable structure of a source of compound plasma in accordance with an embodiment of the present invention.

10‧‧‧Company plasma source

20‧‧‧ body

21‧‧‧ Plasma discharge room

22‧‧‧ aperture

30‧‧‧Transformers

31‧‧‧ magnetic core

32‧‧‧Original winding

33‧‧‧Magnetic core protection tube

34‧‧‧ magnetic field

35‧‧‧First ring electric field

40‧‧‧Second capacitor coupling electrode

41‧‧‧Insulated area

42‧‧‧second radial electric field

50‧‧‧First power supply

51‧‧‧second power supply

Claims (13)

A compound plasma source device comprising: a body to form a plasma discharge chamber, and comprising a first capacitive coupling electrode made of a conductive metal; a transformer comprising a plasma discharge chamber a magnetic core and a primary winding are coupled to generate an inductively coupled plasma in the plasma discharge chamber; a magnetic core protection tube surrounding the magnetic core positioned in the plasma discharge chamber; and a second capacitive coupling An electrode mounted in the magnetic core protection tube; a substrate support member positioned in the plasma discharge chamber to load a substrate to be processed, wherein the substrate support member is coupled to a bias power source; a first switch Switching the second capacitive coupling electrode between the second power source and the ground; and a second switch to switch the substrate support between the bias power source and the ground, wherein the first switch and the first switch The second open relationship is associated with each other in a reverse operational relationship. The compound plasma source device of claim 1, wherein the first capacitive coupling electrode comprises an insulating region forming an electrical discontinuity such that the eddy current is minimized. The compound plasma source device of claim 1 or 2, wherein the second capacitive coupling electrode comprises an insulating region forming an electrical discontinuity such that the eddy current is minimized. For example, the compound plasma source equipment of claim 1 of the patent scope, The method includes: a first power source for supplying power to a primary winding of the transformer for generating an inductively coupled plasma; and a second power source for supplying power to the first capacitive coupling electrode or the second capacitor The coupling electrode is used to generate a capacitively coupled plasma. The compound plasma source device of claim 4, further comprising: a first impedance adapter connected to the output end of the first power source; and a second impedance adapter connected to the second power source Output end. The compound plasma source device of claim 1, further comprising: a common power source for supplying power for generating the capacitive coupling plasma to the first capacitive coupling electrode or to the second capacitive coupling electrode And supplying power for generating the inductively coupled plasma to the primary winding of the transformer; and a power distributor to distribute the power to the first capacitive coupling electrode or to the second capacitive coupling electrode, and The original winding of the transformer. The compound plasma source device of claim 1, further comprising a common power source for supplying power for generating the capacitive coupling plasma to the first capacitive coupling electrode or to the second capacitive coupling electrode, And supplying power for generating the inductively coupled plasma to the primary winding of the transformer, wherein the first capacitive coupling electrode or the second capacitive coupling electrode and the primary winding of the transformer are connected in series to the common power supply. The compound plasma source device of claim 6 or 7 further comprising an impedance adapter connected to the output end of the common power source. The compound plasma source device of claim 1, wherein the core protection tube comprises a dielectric material. The compound plasma source device of claim 1, further comprising a coolant supply passage installed in the core protection tube. The compound plasma source apparatus of claim 1, further comprising a coolant supply passage formed in a central region of the magnetic core. The compound plasma source device of claim 1, further comprising: a gas inlet through which the gas system is introduced into the plasma discharge chamber; a gas outlet through which the gas system is discharged; and a treatment a chamber for containing a plasma discharged through the gas outlet and including another substrate support mounted therein. A compound plasma source apparatus according to claim 12, wherein the other substrate support member is connected to a biasing power source.