WO2007117122A1 - Compound plasma source and method for dissociating gases using the same - Google Patents

Compound plasma source and method for dissociating gases using the same Download PDF

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Publication number
WO2007117122A1
WO2007117122A1 PCT/KR2007/001761 KR2007001761W WO2007117122A1 WO 2007117122 A1 WO2007117122 A1 WO 2007117122A1 KR 2007001761 W KR2007001761 W KR 2007001761W WO 2007117122 A1 WO2007117122 A1 WO 2007117122A1
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WO
WIPO (PCT)
Prior art keywords
plasma
capacitance coupling
coupling electrode
compound
discharge chamber
Prior art date
Application number
PCT/KR2007/001761
Other languages
French (fr)
Inventor
Dae-Kyu Choi
Soon-Im Wi
Original Assignee
New Power Plasma Co., Ltd.
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Filing date
Publication date
Application filed by New Power Plasma Co., Ltd. filed Critical New Power Plasma Co., Ltd.
Publication of WO2007117122A1 publication Critical patent/WO2007117122A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits

Definitions

  • Plasma discharge is used for a gas excitation for generating active gases including ions, free radicals, atoms, molecules, and the like.
  • active gases are used to various fields of application, typically to a semiconductor manufacturing process, such as etching, deposition, cleaning, and the like.
  • the first capacitance coupling electrode may include an insulation area of forming electrical discontinuity such that eddy current is minimized.
  • the compound plasma source may further include a first impedance adapter connected to an output end of the first power source; and a second impedance adapter connected to an output end of the second power source.
  • the compound plasma source may further include a common power source to supply an electric power for the generation of a capacitively coupled plasma to the first capacitance coupling electrode or to the second capacitance coupling electrode, and to supply an electric power for the generation of an inductively coupled plasma to the primary winding of the transformer; and a power distributor to distribute the electric power to the first capacitance coupling electrode or to the second ca- pacitance coupling electrode, and the primary winding of the transformer.
  • a common power source to supply an electric power for the generation of a capacitively coupled plasma to the first capacitance coupling electrode or to the second capacitance coupling electrode, and to supply an electric power for the generation of an inductively coupled plasma to the primary winding of the transformer
  • a power distributor to distribute the electric power to the first capacitance coupling electrode or to the second ca- pacitance coupling electrode, and the primary winding of the transformer.
  • the compound plasma source may further include a common power source to supply an electric power for the generation of a capacitively coupled plasma to the first capacitance coupling electrode or to the second capacitance coupling electrode, and to supply an electric power for the generation of an inductively coupled plasma to the primary winding of the transformer, and the first capacitance coupling electrode or the second capacitance coupling electrode and the primary winding of the transformer may be connected to the common power source in series.
  • a common power source to supply an electric power for the generation of a capacitively coupled plasma to the first capacitance coupling electrode or to the second capacitance coupling electrode, and to supply an electric power for the generation of an inductively coupled plasma to the primary winding of the transformer, and the first capacitance coupling electrode or the second capacitance coupling electrode and the primary winding of the transformer may be connected to the common power source in series.
  • the core protection tube may include a dielectric material.
  • the compound plasma source may further include a coolant supply channel installed in the core protection tube.
  • the compound plasma source may further include a coolant supply channel formed in the central area of the magnetic core.
  • the compound plasma source may further include a gas inlet through which gas is introduced into the plasma discharge chamber; a gas outlet through which the gas is discharged; and a process chamber to accommodate a plasma discharged through the gas outlet and including a substrate support installed therein.
  • the substrate support may be connected to a bias power source.
  • the compound plasma source may further include a first switch to switch the second capacitance coupling electrode between the second power source and the ground; and a second switch to switch the substrate support between the bias power source and the ground, and the first switch and the second switch may be associated with each other in a reversely operated relation.
  • a method of dissociating gases using a compound plasma source may include providing a body to form a plasma discharge chamber and including a first capacitance coupling electrode made of a conductive metal; providing a transformer including a magnetic core and a primary winding to be coupled with the plasma discharge chamber to generate an inductively coupled plasma in the plasma discharge chamber; providing a core protection tube to surround the magnetic core positioned in the plasma discharge chamber; providing a second capacitance coupling electrode installed in the core protection tube; and generating a compound plasma capacitively coupled by driving the first and second capacitance coupling electrodes and inductively coupled by driving the transformer.
  • the first and second capacitance coupling electrodes may be driven to provide an initial ionization operation before driving the transformer.
  • the gas may be selected from a group of inert gas, reactant gas, and a gas mixture of the inert gas and the reactant gas.
  • FIG. 1 is a sectional view illustrating a compound plasma source according to an embodiment of the present invention
  • FIG. 2 is a sectional view taken along the line A-A of FIG. 1 ;
  • FIGS. 3 to 6 are views illustrating various modifications of a power source of the c ompound plasma source according to an embodiment of the present invention
  • FIG. 9 is a view illustrating the compound plasma source according to an embodiment of the present invention applied to a remote plasma processing system
  • FIG. 10 is a view illustrating a compound plasma source according to an embodiment of the present invention applied to a process chamber for processing a substrate.
  • FIG. 11 is an exemplary view illustrating an extendible structure of the compound plasma source according to an embodiment of the present invention. Best Mode for Carrying Out the Invention
  • FIG. 1 is a sectional view illustrating a compound plasma source according to an embodiment of the present invention
  • FIG. 2 is a sectional view taken along the line A-A of FIG. 1.
  • the compound plasma source 10 includes a magnetic core 31 to generate the inductively coupled plasma and a transformer 30 having a primary winding 32.
  • the magnetic core 31 is a ring-shaped ferrite core and has the primary winding 32 wound therearound to form the transformer 30.
  • the magnetic core 31 is made of a ferrite material or other alternative material such as iron, air, and etc. Specially, the magnetic core 31 is coupled with a body 20 such that a part of the magnetic core 31 is placed the inside of the body 20 to form a plasma discharge chamber 21. The part of the magnetic core 31 placed in the plasma discharge chamber 21 is protected by a core protection tube 33.
  • the core protection tube 33 is preferably made of quartz, ceramic and dielectric material. Both ends of the core protection tube 33 are connected to apertures 22 formed in the side walls of the body 20 to face each other. The apertures 22 of the side walls, to which the core protection tube 33 and the body 20 are connected, are sealed with a suitable sealing member (not shown).
  • the body 20 is made of a metal material such as aluminum, stainless steel, copper, or the like.
  • the body 20 may be also made of a coated metal, for example, anodized aluminum or aluminum coated with nickel.
  • the body 20 may be also made of refractory metal.
  • a generator body 20 may be made of insulating material, such as quartz, ceramic, or the like, and may be made of any suitable material in which a desired plasma process is performed.
  • the body 20 is overall made in a hollow cylindrical shape. However, it can be understood that the body 20 may be modified into a box- shape or other various shapes.
  • the primary winding 32 is connected to a first power source 50 electrically.
  • the first power source 50 is an alternating current (AC) power source to supply RF power.
  • AC alternating current
  • an output end of the first power source 50 may have an impedance adapter to match impedance.
  • the first power source may be configured by an RF power source having a controllable output voltage without the additional impedance adapter.
  • the compound plasma source 10 includes first and second capacitance coupling electrodes 20 and 40 to generate the capacitivley coupled plasma.
  • the first capacitance coupling electrode 20 includes a body 20 having a conductive metal.
  • the body 20 serves to as the first capacitance coupling electrode 20
  • the body 20 and the first capacitance coupling electrode are assigned with a same reference number.
  • the first capacitance coupling electrode 20 may be made of additional conductive metal to be constructed around the body 20, and a specific part of the body 20, in which the conductive metal is installed, can form a dielectric window.
  • the second capacitance coupling electrode 40 is installed inside the core protection tube 33.
  • the second capacitance coupling electrode 40 has a cylindrical shape to surround the overall magnetic core 31 inserted into the core protection tube 33.
  • the second capacitance coupling electrode 40 may be made of the same material as that of the first capacitance coupling electrode 20.
  • the second capacitance coupling electrode 40 is electrically connected to a second power source 51 and the first capacitance coupling electrode 20 is grounded.
  • the first capacitance coupling electrode 20 functions as a cathode
  • the second capacitance coupling electrode 40 functions as an anode. However, if necessary, their functions can be exchanged.
  • the second power source 51 is an AC power supply to supply an RF power.
  • an impedance adapter for the impedance matching may be installed at the output end of the second power source 51.
  • the second power supply may be configured by an RF power supply having a controllable output voltage without the additional impedance adapter.
  • the first and second capacitance coupling electrodes 20 and 40 include insulating areas 22 and 41 to form the electrical discontinuity so as to minimize an eddy current due to the inductively coupled plasma, respectively.
  • the first electric field 35 is inducted by the transformer 30 and the second electric field 42 is generated by the first and second capacitance coupling electrodes 20 and 40.
  • the ring-shaped first electric field 35 is inducted to surround overall the core protection tube 33 placed in the plasma discharge chamber 21.
  • the first electric field 35 generates the inductively coupled plasma to complete the secondary circuit of the transformer 30.
  • the capacitively coupled plasma and the inductively coupled plasma are generated in the plasma discharge chamber 21 in the compound manner.
  • the first electric field 35 crosses the second electric field 42 in the per- pendicular direction, the helical movement of gas ion particles is accelerated in the plasma discharge chamber 21, resulting in a high ability of dissociating the gases. Therefore, density of plasma ions can be easily controlled by controlling the electric powers of the first and second power sources 50 and 51. In other words, the density of the plasma ions can be obtained without an excessive increase of the ion energy.
  • the damage of the inner wall of the plasma discharge chamber 21, caused by the ion impact due to the gas ion particles which are compoundly accelerated by the first electric field 35 and the second electric field 42, is very minimized and the generation of harmful particle is minimized extremely.
  • the gas injected into the plasma discharge chamber 21 may be selected from the group including inert gas, reactant gas, or gas mixture of the inactive gas and the reactant gas.
  • the first and second capacitance coupling electrodes 20 and 40 are driven to provide an initial ionization operation before the transformer 30 is driven.
  • the compound plasma source 10 can supply the electric power to the transformer 30 and the first and the second capacitance coupling electrodes 20 and 40 through a single common power supply 52.
  • a power distributor 53 may be installed to the output end of the common power supply 52.
  • the power distributor 53 may form a power distribution circuit using a transformer or a parallel capacitor.
  • the power distributor 53 can be constructed with various electronic circuits. If the capacitance of the transformer or the parallel capacitor is variable, the electric power is properly adjusted.
  • the compound plasma source 10 can be configured by connecting the transformer 30 and the first and the second capacitance coupling electrodes 20 and 40 to the single common power supply 53 in series.
  • the second capacitance coupling electrode 40 may be grounded.
  • the common power source 52 is an AC power source to supply RF power.
  • the compound plasma source 10 can be configured to serve to as an electrode and inductive coil antenna by fabricating the second capacitance coupling electrode 40 in the form of a single wire coil.
  • the number of RF power sources can be decreased by using the common power source 52, so that a simple compound plasma source 10 can be constructed with low costs.
  • the end of the second power source 50 may be provided with an impedance adapter to match the impedance.
  • the second power source may be configured by an RF power source having a controllable output voltage without an additional impedance adapter.
  • the compound plasma source 10 includes a coolant supply channel installed at a very proper position to supply coolant.
  • the coolant supply channel can be installed in the core protection tube 33.
  • the coolant supply channel can be configured to penetrate a center of the magnetic core 31.
  • the coolant supply channel can be installed in the body 20.
  • the coolant supply channel can be configured in the electrode 40 provided in the protection tube 33.
  • FIGS. 7 and 8 are sectional views illustrating examples of forming a gas inlet and a gas outlet in the plasma discharge chamber.
  • the compound plasma source 10 includes a gas inlet 60 through which gases are introduced into the plasma discharge chamber 21, and a gas outlet 61 through which gases are discharged from the plasma discharge chamber 21.
  • the gas inlet 60 and the gas outlet 61 are formed at desired positions of the body 20.
  • the process chamber 70 is connected to the compound plasma source 10, accommodates the plasma discharged through the gas outlet 61 of the compound plasma source 10, and includes a substrate support 71 to support a substrate 72 placed in the process chamber 70.
  • the substrate support 71 may include a bias electrode (not shown) connected to a bias power source 73 to accelerate the gas ion particles toward the substrate. Also, the substrate support 71 may include a heater to heat the substrate.
  • FIG. 10 is a view illustrating a compound plasma source according to the embodiment of the present invention applied to a process chamber for processing a substrate.
  • a compound plasma source 10a may be configured such that a body 20 functions as a process chamber.
  • the plasma discharge chamber 21 includes the substrate support 71 to support the substrate 72 therein.
  • the substrate support 71 may include bias electrode (not shown) connected to the bias power source 73 to accelerate the gas ion particles toward the substrate. Also, the substrate support 71 may include a heater to heat the substrate.
  • the second capacitance coupling electrode 40 may be connected to a first switch 55 switched between the second power source 51 and the ground.
  • the substrate support 71 may be connected to a second switch 75 switched between the bias power source 73 and the ground.
  • the first and the second switches 55 and 75 are reversely operated in association with each other.
  • the first and the second switches 55 and 75 may be three-pole switches including floating potential.
  • the process chambers 70 and 20 may be etching chambers where the plasma etching is performed, or deposition chambers where a plasma deposition is performed, or etching chambers where photoresist is stripped.
  • the compound plasma source 10 is useful to process various substances such as, a solid surface, powder, gas, and the like.
  • the compound plasma source 10 can serve to as an ion beam source for injecting ion or for milling the ion.
  • a proper ion accelerator is installed around the gas outlet 61.
  • FIG. 11 is an exemplary view illustrating an extendible structure of a compound plasma source.
  • a magnetic core 31 may be installed to the plasma discharge chamber 21 such that parts of the magnetic core 31 to be positioned in the plasma discharge chamber 21 are parallel to each other.
  • two core protection tubes 33 and two second capacitance coupling electrodes 40 are mounted in the plasma discharge chamber 21, respectively.
  • Installing this architecture the compound plasma source 10b can be extended.
  • an overall area where the plasma is generated overall can be extended. Due to this extension, the compound plasma source according to the present invention is very suitable to generate the plasma in a very wide area of high density and the plasma ion energy can be easily adjusted.
  • an extendible compound plasma source is provided with a high ability of controlling plasma ion energy and of processing a wide area plasma by adapting the advantage of the inductively coupled plasma and the capacitively coupled plasma.
  • the method dissociates an active gas using the extendible compound plasma source.
  • the compound plasma source of present invention and the method of dissociating gases using the same can be used in the plasma deposition, the etching of striping the photoresist, and a process of processing various substances such as a solid surface, powder, gases, and the like.
  • the compound plasma source and the method of dissociating gases can be served as an ion beam source for injecting the ion, and for milling the ion.

Abstract

Disclosed is a compound plasma source. The compound plasma source includes a transformer to generate inductively coupled plasma, and first and second capacitance coupling electrodes to generate capacitively coupled plasma. The transformer includes a magnetic core being partially positioned in a plasma discharge chamber and a primary winding wound around the magnetic core and connected to a first power source. The first capacitance coupling electrode has a body to form the plasma discharge chamber. The magnetic core positioned in the plasma discharge chamber is protected by a core protection tube. The second capacitance coupling electrode is installed in the core protection tube. The second capacitance coupling electrode is connected to a second power source. When the first and second power sources start to supply electric power, a ring-shaped first magnetic field and a radial-shaped second magnetic field are generated to generate the inductively coupled plasma and the capacitively coupled plasma in the plasma discharge chamber in a compound manner.

Description

Description
COMPOUND PLASMA SOURCE AND METHOD FOR DISSOCIATING GASES USING THE SAME
Technical Field
[1] The present invention relates to plasma source for generating active gases by plasma discharge, and more particularly, to a compound plasma source employing structural devices to generate capacitively coupled plasma and inductively coupled plasma in a compound manner. Background Art
[2] Plasma discharge is used for a gas excitation for generating active gases including ions, free radicals, atoms, molecules, and the like. The active gases are used to various fields of application, typically to a semiconductor manufacturing process, such as etching, deposition, cleaning, and the like.
[3] There are several kinds of plasma sources for generating plasma. For example, the capacitively coupled plasma and the inductively coupled plasma, using ratio frequency, are generally used.
[4] As already known, a capacitively coupled plasma source has a process productivity higher than those of other plasma sources because of the ability of precisely adjusting a capacitance coupling and ions. On the other hand, since energy of radio frequency power source is connected to the plasma through an exclusive capacitance coupling, the plasma ion density can be increased or decreased by only the increase or decrease of the capacitively coupled radio frequency power. However, since the increased power brings increased ion impact energy, there is a limit of preventing the damage due to the ion impact.
[5] In addition, the inductively coupled plasma source may increase the ion density easily as the radio frequency power source increases. Due to this, it is known that the inductively coupled plasma source is relatively low and very proper to obtain a high- density plasma. However, since an inductive coil cannot control the most of or entire the plasma ion energy, a separated individual device must be added in order to control the plasma ion energy. For example, there is a bias technology to apply an independent radio frequency to a substrate support provided in a process chamber. However, since it is difficult to control the plasma ion energy due to the bias applied to the substrate support, the bias technology has a drawback of low process productivity.
[6] Meanwhile, a wafer or a liquid crystal display (LCD) glass substrate used in manufacturing a semiconductor device is increasing in size. Thus, it is demanded to develop an extendible plasma source capable of controlling the plasma ion energy and of processing a very large-sized glass substrate. Disclosure of Invention
Technical Problem
[7] Therefore, the present invention has been made in view of the above problems, and it is an aspect of the present invention to provide an extendible compound plasma source having a high ability of controlling plasma ion energy and of processing plasma in wide area by adapting the advantages of inductively coupled plasma and ca- pacitively coupled plasma, and to provide a gas dissociating method of generating an active gas using the compound plasma source. Technical Solution
[8] In accordance with an aspect of the present invention, the objects of the present invention can be accomplished by the provision of a compound plasma source.
[9] The compound plasma source may include a body to form a plasma discharge chamber and including a first capacitance coupling electrode made of a conductive metal; a transformer including a magnetic core and a primary winding to be coupled with the plasma discharge chamber to generate an inductively coupled plasma in the plasma discharge chamber; a core protection tube to surround the magnetic core positioned in the plasma discharge chamber; and a second capacitance coupling electrode installed in the core protection tube.
[10] Preferably, the first capacitance coupling electrode may include an insulation area of forming electrical discontinuity such that eddy current is minimized.
[11] Preferably, the second capacitance coupling electrode may include an insulation area of forming electrical discontinuity such that eddy current is minimized.
[12] Preferably, the compound plasma source may further include a first power source to supply an electric power to the primary winding of the transformer for the generation of an inductively coupled plasma; and a second power source to supply an electric power to the first capacitance coupling electrode or the second capacitance coupling electrode for the generation of a capacitively coupled plasma.
[13] Preferably, the compound plasma source may further include a first impedance adapter connected to an output end of the first power source; and a second impedance adapter connected to an output end of the second power source.
[14] Preferably, the compound plasma source may further include a common power source to supply an electric power for the generation of a capacitively coupled plasma to the first capacitance coupling electrode or to the second capacitance coupling electrode, and to supply an electric power for the generation of an inductively coupled plasma to the primary winding of the transformer; and a power distributor to distribute the electric power to the first capacitance coupling electrode or to the second ca- pacitance coupling electrode, and the primary winding of the transformer.
[15] Preferably, the compound plasma source may further include a common power source to supply an electric power for the generation of a capacitively coupled plasma to the first capacitance coupling electrode or to the second capacitance coupling electrode, and to supply an electric power for the generation of an inductively coupled plasma to the primary winding of the transformer, and the first capacitance coupling electrode or the second capacitance coupling electrode and the primary winding of the transformer may be connected to the common power source in series.
[16] Preferably, the compound plasma source may further include an impedance adapter connected to an output end of the common power source.
[17] Preferably, the core protection tube may include a dielectric material.
[18] Preferably, the compound plasma source may further include a coolant supply channel installed in the core protection tube.
[19] Preferably, the compound plasma source may further include a coolant supply channel formed in the central area of the magnetic core.
[20] Preferably, the compound plasma source may further include a gas inlet through which gas is introduced into the plasma discharge chamber; a gas outlet through which the gas is discharged; and a process chamber to accommodate a plasma discharged through the gas outlet and including a substrate support installed therein.
[21] Preferably, the substrate support may be connected to a bias power source.
[22] Preferably, the compound plasma source may further include a substrate support positioned in the plasma discharge chamber to load a substrate to be processed, and the substrate support may be connected to a bias power source.
[23] Preferably, the compound plasma source may further include a first switch to switch the second capacitance coupling electrode between the second power source and the ground; and a second switch to switch the substrate support between the bias power source and the ground, and the first switch and the second switch may be associated with each other in a reversely operated relation.
[24] According to another aspect of the present invention, there is provided a method of dissociating gases using a compound plasma source. The method may include providing a body to form a plasma discharge chamber and including a first capacitance coupling electrode made of a conductive metal; providing a transformer including a magnetic core and a primary winding to be coupled with the plasma discharge chamber to generate an inductively coupled plasma in the plasma discharge chamber; providing a core protection tube to surround the magnetic core positioned in the plasma discharge chamber; providing a second capacitance coupling electrode installed in the core protection tube; and generating a compound plasma capacitively coupled by driving the first and second capacitance coupling electrodes and inductively coupled by driving the transformer. [25] Preferably, the first and second capacitance coupling electrodes may be driven to provide an initial ionization operation before driving the transformer. [26] Preferably, the gas may be selected from a group of inert gas, reactant gas, and a gas mixture of the inert gas and the reactant gas.
Advantageous Effects
[27] According to the compound plasma source according to the present invention and the gas dissociating method using the same, since all the advantages of the inductively coupled plasma and the capacitively coupled plasma are employed, it is possible to provide an extendible compound plasma source having ability of precisely controlling the plasma ion energy and processing the large- sized object, and to provide a gas dissociating method of generating active gases. Brief Description of the Drawings
[28] These and/or other aspects and advantages of the present invention will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings, in which:
[29] FIG. 1 is a sectional view illustrating a compound plasma source according to an embodiment of the present invention;
[30] FIG. 2 is a sectional view taken along the line A-A of FIG. 1 ;
[31] FIGS. 3 to 6 are views illustrating various modifications of a power source of the c ompound plasma source according to an embodiment of the present invention;
[32] FIGS. 7 and 8 are sectional views illustrating examples of forming a gas inlet and a gas outlet in a plasma discharge chamber;
[33] FIG. 9 is a view illustrating the compound plasma source according to an embodiment of the present invention applied to a remote plasma processing system;
[34] FIG. 10 is a view illustrating a compound plasma source according to an embodiment of the present invention applied to a process chamber for processing a substrate; and
[35] FIG. 11 is an exemplary view illustrating an extendible structure of the compound plasma source according to an embodiment of the present invention. Best Mode for Carrying Out the Invention
[36] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. An atmospheric plasma generator and an atmospheric plasma process system having the atmospheric plasma generator will be described more fully.
[37] FIG. 1 is a sectional view illustrating a compound plasma source according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along the line A-A of FIG. 1.
[38] In reference with FIG. 1 and FIG. 2, the compound plasma source 10 according to the embodiment of the present invention dissociates the gases using the inductively coupled plasma and the capacitively coupled plasma and generates the active gas.
[39] The compound plasma source 10 includes a magnetic core 31 to generate the inductively coupled plasma and a transformer 30 having a primary winding 32. The magnetic core 31 is a ring-shaped ferrite core and has the primary winding 32 wound therearound to form the transformer 30.
[40] The magnetic core 31 is made of a ferrite material or other alternative material such as iron, air, and etc. Specially, the magnetic core 31 is coupled with a body 20 such that a part of the magnetic core 31 is placed the inside of the body 20 to form a plasma discharge chamber 21. The part of the magnetic core 31 placed in the plasma discharge chamber 21 is protected by a core protection tube 33. The core protection tube 33 is preferably made of quartz, ceramic and dielectric material. Both ends of the core protection tube 33 are connected to apertures 22 formed in the side walls of the body 20 to face each other. The apertures 22 of the side walls, to which the core protection tube 33 and the body 20 are connected, are sealed with a suitable sealing member (not shown).
[41] The body 20 is made of a metal material such as aluminum, stainless steel, copper, or the like. The body 20 may be also made of a coated metal, for example, anodized aluminum or aluminum coated with nickel. The body 20 may be also made of refractory metal. Alternatively, a generator body 20 may be made of insulating material, such as quartz, ceramic, or the like, and may be made of any suitable material in which a desired plasma process is performed. The body 20 is overall made in a hollow cylindrical shape. However, it can be understood that the body 20 may be modified into a box- shape or other various shapes.
[42] The primary winding 32 is connected to a first power source 50 electrically. The first power source 50 is an alternating current (AC) power source to supply RF power. Even not shown in the drawings, an output end of the first power source 50 may have an impedance adapter to match impedance. However, the skilled in the art will appreciate that the first power source may be configured by an RF power source having a controllable output voltage without the additional impedance adapter.
[43] The compound plasma source 10 includes first and second capacitance coupling electrodes 20 and 40 to generate the capacitivley coupled plasma. The first capacitance coupling electrode 20 includes a body 20 having a conductive metal. In this embod iment, since the body 20 serves to as the first capacitance coupling electrode 20, the body 20 and the first capacitance coupling electrode are assigned with a same reference number. However, it is noticed that the first capacitance coupling electrode 20 may be made of additional conductive metal to be constructed around the body 20, and a specific part of the body 20, in which the conductive metal is installed, can form a dielectric window.
[44] The second capacitance coupling electrode 40 is installed inside the core protection tube 33. Preferably, the second capacitance coupling electrode 40 has a cylindrical shape to surround the overall magnetic core 31 inserted into the core protection tube 33. The second capacitance coupling electrode 40 may be made of the same material as that of the first capacitance coupling electrode 20.
[45] The second capacitance coupling electrode 40 is electrically connected to a second power source 51 and the first capacitance coupling electrode 20 is grounded. The first capacitance coupling electrode 20 functions as a cathode, and the second capacitance coupling electrode 40 functions as an anode. However, if necessary, their functions can be exchanged.
[46] The second power source 51 is an AC power supply to supply an RF power.
Although not shown in the drawings, at the output end of the second power source 51, an impedance adapter for the impedance matching may be installed. However, the skilled in the art will appreciate that the second power supply may be configured by an RF power supply having a controllable output voltage without the additional impedance adapter.
[47] The first and second capacitance coupling electrodes 20 and 40 include insulating areas 22 and 41 to form the electrical discontinuity so as to minimize an eddy current due to the inductively coupled plasma, respectively.
[48] When the first and second power sources 50 and 51 supply electric power to the compound plasma source 10 respectively, a first annular electric field 35 and a second radial electric field 42 are generated in the plasma discharge chamber 21, as respectively indicated by dotted lines in FIG. 1 and FIG. 2. Thus, the capacitively coupled plasma and the inductively coupled plasma are generated in the plasma discharge chamber 21 in a compound type.
[49] The first electric field 35 is inducted by the transformer 30 and the second electric field 42 is generated by the first and second capacitance coupling electrodes 20 and 40. In other words, due to a magnetic field 34 fluxed along to the magnetic core 31 by the primary winding 32, the ring-shaped first electric field 35 is inducted to surround overall the core protection tube 33 placed in the plasma discharge chamber 21. The first electric field 35 generates the inductively coupled plasma to complete the secondary circuit of the transformer 30.
[50] As described above, the capacitively coupled plasma and the inductively coupled plasma are generated in the plasma discharge chamber 21 in the compound manner. Specially, since the first electric field 35 crosses the second electric field 42 in the per- pendicular direction, the helical movement of gas ion particles is accelerated in the plasma discharge chamber 21, resulting in a high ability of dissociating the gases. Therefore, density of plasma ions can be easily controlled by controlling the electric powers of the first and second power sources 50 and 51. In other words, the density of the plasma ions can be obtained without an excessive increase of the ion energy. In addition, since the first electric field 35 is substantially parallel to the body 20 and the core protection tube 33, the damage of the inner wall of the plasma discharge chamber 21, caused by the ion impact due to the gas ion particles which are compoundly accelerated by the first electric field 35 and the second electric field 42, is very minimized and the generation of harmful particle is minimized extremely.
[51] The gas injected into the plasma discharge chamber 21 may be selected from the group including inert gas, reactant gas, or gas mixture of the inactive gas and the reactant gas. The first and second capacitance coupling electrodes 20 and 40 are driven to provide an initial ionization operation before the transformer 30 is driven.
[52] FIGS. 3 to 6 are views illustrating various modifications of the power supply of the compound plasma source 10. The above-described compound plasma source 10 can be modified in the various types as described later.
[53] Referring to FIG. 3, as one modification, the compound plasma source 10 can supply the electric power to the transformer 30 and the first and the second capacitance coupling electrodes 20 and 40 through a single common power supply 52. For this, a power distributor 53 may be installed to the output end of the common power supply 52. The power distributor 53 may form a power distribution circuit using a transformer or a parallel capacitor. In addition, the power distributor 53 can be constructed with various electronic circuits. If the capacitance of the transformer or the parallel capacitor is variable, the electric power is properly adjusted.
[54] Referring to FIG. 4, as another modification, the compound plasma source 10 can be configured by connecting the transformer 30 and the first and the second capacitance coupling electrodes 20 and 40 to the single common power supply 53 in series. In this case, as illustrated in FIG. 5, the second capacitance coupling electrode 40 may be grounded. The common power source 52 is an AC power source to supply RF power.
[55] Referring to FIG. 6, as still another modification, the compound plasma source 10 can be configured to serve to as an electrode and inductive coil antenna by fabricating the second capacitance coupling electrode 40 in the form of a single wire coil.
[56] As such, the number of RF power sources can be decreased by using the common power source 52, so that a simple compound plasma source 10 can be constructed with low costs. Although not shown in the drawings, the end of the second power source 50 may be provided with an impedance adapter to match the impedance. However, the skilled in the art will appreciate that the second power source may be configured by an RF power source having a controllable output voltage without an additional impedance adapter.
[57] Although not shown in the drawings, the compound plasma source 10 includes a coolant supply channel installed at a very proper position to supply coolant. For example, the coolant supply channel can be installed in the core protection tube 33. The coolant supply channel can be configured to penetrate a center of the magnetic core 31. The coolant supply channel can be installed in the body 20. Other else, the coolant supply channel can be configured in the electrode 40 provided in the protection tube 33.
[58] FIGS. 7 and 8 are sectional views illustrating examples of forming a gas inlet and a gas outlet in the plasma discharge chamber. As illustrated in FIGS. 7 and 8, the compound plasma source 10 includes a gas inlet 60 through which gases are introduced into the plasma discharge chamber 21, and a gas outlet 61 through which gases are discharged from the plasma discharge chamber 21. The gas inlet 60 and the gas outlet 61 are formed at desired positions of the body 20.
[59] FIG. 9 is a view illustrating the compound plasma source according to the embodiment of the present invention applied to a remote plasma process system. Referring to FIG. 9, the compound plasma source 10 is mounted to a plasma process chamber 70 to construct the remote plasma process system to provide the plasma in remote.
[60] The process chamber 70 is connected to the compound plasma source 10, accommodates the plasma discharged through the gas outlet 61 of the compound plasma source 10, and includes a substrate support 71 to support a substrate 72 placed in the process chamber 70. The substrate support 71 may include a bias electrode (not shown) connected to a bias power source 73 to accelerate the gas ion particles toward the substrate. Also, the substrate support 71 may include a heater to heat the substrate.
[61] FIG. 10 is a view illustrating a compound plasma source according to the embodiment of the present invention applied to a process chamber for processing a substrate. Referring to FIG. 10, a compound plasma source 10a may be configured such that a body 20 functions as a process chamber. The plasma discharge chamber 21 includes the substrate support 71 to support the substrate 72 therein. The substrate support 71 may include bias electrode (not shown) connected to the bias power source 73 to accelerate the gas ion particles toward the substrate. Also, the substrate support 71 may include a heater to heat the substrate.
[62] Particularly, in this configuration, the second capacitance coupling electrode 40 may be connected to a first switch 55 switched between the second power source 51 and the ground. In addition, the substrate support 71 may be connected to a second switch 75 switched between the bias power source 73 and the ground. The first and the second switches 55 and 75 are reversely operated in association with each other. The first and the second switches 55 and 75 may be three-pole switches including floating potential.
[63] In FIGS. 9 and 10, the process chambers 70 and 20 may be etching chambers where the plasma etching is performed, or deposition chambers where a plasma deposition is performed, or etching chambers where photoresist is stripped. Moreover, the compound plasma source 10 is useful to process various substances such as, a solid surface, powder, gas, and the like. In addition, the compound plasma source 10 can serve to as an ion beam source for injecting ion or for milling the ion. Preferably, in order to utilize the compound plasma source 10 as the ion beam source, a proper ion accelerator is installed around the gas outlet 61.
[64] FIG. 11 is an exemplary view illustrating an extendible structure of a compound plasma source. As shown in FIG. 11, in a compound plasma source 10b, a magnetic core 31 may be installed to the plasma discharge chamber 21 such that parts of the magnetic core 31 to be positioned in the plasma discharge chamber 21 are parallel to each other. In this case, two core protection tubes 33 and two second capacitance coupling electrodes 40 are mounted in the plasma discharge chamber 21, respectively. Installing this architecture, the compound plasma source 10b can be extended. In addition, when the length of the magnetic core 31 is elongated, an overall area where the plasma is generated overall can be extended. Due to this extension, the compound plasma source according to the present invention is very suitable to generate the plasma in a very wide area of high density and the plasma ion energy can be easily adjusted.
[65] Although a few embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in this embodiment without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents. Industrial Applicability
[66] As described above, according to the compound plasma source of present invention and the method for dissociating gases using the same, an extendible compound plasma source is provided with a high ability of controlling plasma ion energy and of processing a wide area plasma by adapting the advantage of the inductively coupled plasma and the capacitively coupled plasma. In addition, the method dissociates an active gas using the extendible compound plasma source.
[67] The compound plasma source of present invention and the method of dissociating gases using the same can be used in the plasma deposition, the etching of striping the photoresist, and a process of processing various substances such as a solid surface, powder, gases, and the like. Moreover, the compound plasma source and the method of dissociating gases can be served as an ion beam source for injecting the ion, and for milling the ion.

Claims

Claims
[ 1 ] A compound plasma source comprising: a body to form a plasma discharge chamber and including a first capacitance coupling electrode made of a conductive metal; a transformer including a magnetic core and a primary winding to be coupled with the plasma discharge chamber to generate an inductively coupled plasma in the plasma discharge chamber; a core protection tube to surround the magnetic core positioned in the plasma discharge chamber; and a second capacitance coupling electrode installed in the core protection tube.
[2] The compound plasma source according to claim 1, wherein the first capacitance coupling electrode comprises an insulation area of forming electrical discontinuity such that eddy current is minimized.
[3] The compound plasma source according to claim 1 or 2, wherein the second capacitance coupling electrode comprises an insulation area of forming electrical discontinuity such that eddy current is minimized.
[4] The compound plasma source according to claim 1, further comprising: a first power source to supply an electric power to the primary winding of the transformer for the generation of an inductively coupled plasma; and a second power source to supply an electric power to the first capacitance coupling electrode or the second capacitance coupling electrode for the generation of a capacitively coupled plasma.
[5] The compound plasma source according to claim 4, further comprising: a first impedance adapter connected to an output end of the first power source; and a second impedance adapter connected to an output end of the second power source.
[6] The compound plasma source according to claim 1, further comprising: a common power source to supply an electric power for the generation of a capacitively coupled plasma to the first capacitance coupling electrode or to the second capacitance coupling electrode, and to supply an electric power for the generation of an inductively coupled plasma to the primary winding of the transformer; and a power distributor to distribute the electric power to the first capacitance coupling electrode or to the second capacitance coupling electrode, and the primary winding of the transformer.
[7] The compound plasma source according to claim 1, further comprising a common power source to supply an electric power for the generation of a ca- pacitively coupled plasma to the first capacitance coupling electrode or to the second capacitance coupling electrode, and to supply an electric power for the generation of an inductively coupled plasma to the primary winding of the transformer, wherein the first capacitance coupling electrode or the second capacitance coupling electrode and the primary winding of the transformer are connected to the common power source in series.
[8] The compound plasma source according to claim 6 or 7, further comprising an impedance adapter connected to an output end of the common power source.
[9] The compound plasma source according to claim 1, wherein the core protection tube comprises a dielectric material.
[10] The compound plasma source according to claim 1, further comprising a coolant supply channel installed in the core protection tube.
[11] The compound plasma source according to claim 1, further comprising a coolant supply channel formed in the central area of the magnetic core.
[12] The compound plasma source according to claim 1, further comprising: a gas inlet through which gas is introduced into the plasma discharge chamber; a gas outlet through which the gas is discharged; and a process chamber to accommodate a plasma discharged through the gas outlet and including a substrate support installed therein.
[13] The compound plasma source according to claim 12, wherein the substrate support is connected to a bias power source.
[14] The compound plasma source according to claim 1, further comprising a substrate support positioned in the plasma discharge chamber to load a substrate to be processed, wherein the substrate support is connected to a bias power source.
[15] The compound plasma source according to claim 14, further comprising: a first switch to switch the second capacitance coupling electrode between the second power source and the ground; and a second switch to switch the substrate support between the bias power source and the ground, wherein the first switch and the second switch are associated with each other in a reversely operated relation.
[16] A method of dissociating gases using a compound plasma source comprising: providing a body to form a plasma discharge chamber and including a first capacitance coupling electrode made of a conductive metal; providing a transformer including a magnetic core and a primary winding to be coupled with the plasma discharge chamber to generate an inductively coupled plasma in the plasma discharge chamber; providing a core protection tube to surround the magnetic core positioned in the plasma discharge chamber; providing a second capacitance coupling electrode installed in the core protection tube; and generating a compound plasma capacitively coupled by driving the first and second capacitance coupling electrodes and inductively coupled by driving the transformer. [17] The method of dissociating gases according to claim 16, wherein the first and second capacitance coupling electrodes are driven to provide an initial ionization operation before driving the transformer. [18] The method of dissociating gases according to claim 16, wherein the gas is selected from a group of inert gas, reactant gas, and a gas mixture of the inert gas and the reactant gas.
PCT/KR2007/001761 2006-04-11 2007-04-11 Compound plasma source and method for dissociating gases using the same WO2007117122A1 (en)

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