KR100979188B1 - Physical vapor deposition plasma reactor with multi source target assembly - Google Patents

Abstract

Physical vapor deposition plasma reactor having a multi-source target assembly of the present invention is a multi-source target assembly installed in the reactor body, a plurality of divided source target unit is installed inside the reactor body, the radio frequency to the plurality of source target unit It includes a main power source for supplying power. In the plasma reactor of the present invention, a plurality of source target units facilitate large area and uniform physical vapor deposition. By automatically balancing currents in parallel driving of the plurality of source target units, the capacitive coupling between the source target units can be uniformly controlled to uniformly generate high density plasma. It also reduces electron collisions to the substrate, which in turn increases the deposition rate.

Physical Vapor Deposition, Source Target, Multiple Electrodes, Plasma, Current Balance

Description

PHYSICAL VAPOR DEPOSITION PLASMA REACTOR WITH MULTI SOURCE TARGET ASSEMBLY}

The present invention relates to a capacitively coupled plasma reactor, specifically, a physical vapor deposition plasma reactor having a multi-source target assembly capable of generating a large area of plasma more uniformly to increase plasma processing efficiency for a large area of a target object. It is about.

Plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules. Active gases are widely used in various fields and are used in various semiconductor manufacturing processes for manufacturing devices such as integrated circuit devices, liquid crystal displays, solar cells, etc., for example, etching, deposition, cleaning, and ashing. It is variously used for ashing.

There are a number of plasma sources for generating plasma, and the representative examples are capacitive coupled plasma and inductive coupled plasma using radio frequency. Capacitively coupled plasma sources have the advantage of high process productivity compared to other plasma sources due to their high capacity for precise capacitive coupling and ion control.

Physical vapor deposition installations using capacitively coupled plasma sources flow a low pressure sputtering gas, usually argon, inside a high vacuum plasma reactor and apply a DC or RF power source between the two electrodes to cause ionization to generate plasma. At this time, since the negative electrode plate covered with the source target material is maintained at a negative potential compared to the substrate, the positively charged argon ions are accelerated toward the source target and collide with each other to release the target material in the form of vapor, and the target vapor in the neutral state is facing the wafer substrate. Will be deposited on.

However, when the capacitively coupled electrode is enlarged in order to process an enlarged substrate, the electrode may be deformed or damaged by deterioration of the electrode. In this case, the electric field strength may be uneven, which may result in uneven plasma density and contaminate the inside of the reactor. In the case of an inductively coupled plasma source, it is also difficult to obtain a uniform plasma density when the area of the induction coil antenna is increased.

In recent years, the semiconductor manufacturing industry has been further improved due to various factors such as ultra miniaturization of semiconductor devices, the enlargement of silicon wafer substrates or substrates to be processed such as glass or plastic substrates for manufacturing semiconductor circuits, and the development of new materials to be processed. Plasma treatment technology is required. In particular, there is a need for improved plasma sources and plasma processing techniques that have good processing capabilities for large area substrates. Furthermore, various semiconductor manufacturing apparatuses using lasers have been provided. Semiconductor manufacturing processes using lasers have been widely applied to various processes such as deposition, etching, annealing, cleaning, and the like on a substrate to be processed. In the case of a semiconductor manufacturing process using such a laser, the above-described problems exist.

The enlargement of the substrate to be processed causes the enlargement of the entire production equipment. Larger production facilities increase the overall plant area, resulting in increased production costs. Therefore, there is a need for a plasma reactor and a plasma processing system capable of minimizing the installation area. In particular, in the semiconductor manufacturing process, productivity per unit area is one of the important factors affecting the price of the final product. Thus, technologies are being provided to effectively arrange the components of a production plant in a way to increase productivity per unit area. For example, a plasma reactor for processing two substrates in parallel is provided. However, most plasma reactors that process two substrates to be processed in parallel are equipped with two plasma sources, which does not substantially minimize process equipment.

If two or more plasma reactors are arranged vertically or horizontally in parallel, the common part of each component can be shared and two substrates can be processed in parallel by one plasma source. There will be several benefits to minimization.

As in any industry, many efforts are underway in the semiconductor industry to increase productivity. In order to increase productivity, production facilities basically need to be increased or improved. However, simply increasing the production equipment has a problem that not only the expansion cost of the process equipment but also the space equipment of the clean room increases, resulting in high cost.

It is an object of the present invention to provide a physical vapor deposition plasma reactor having a multi-source target assembly capable of large area uniform physical vapor deposition.

It is another object of the present invention to provide a physical vapor deposition plasma reactor having a multi-source target assembly capable of uniformly controlling capacitive coupling between a plurality of source target units to uniformly form a high density plasma to achieve more uniform physical vapor deposition. have.

It is still another object of the present invention to provide a physical vapor deposition plasma reactor having a multi-source target assembly capable of uniformly controlling current supply of a plurality of source target units to uniformly generate high-density plasma to enable more uniform physical vapor deposition. To provide.

It is another object of the present invention to provide a physical vapor deposition plasma reactor having a multi-source target assembly that is easy to large area and can generate a high density plasma uniformly.

It is another object of the present invention to physically have a multi-source target assembly which has a large substrate throughput per facility area because it is easy to make a large area and can generate high density plasma uniformly, and can process two or more large areas of the substrate simultaneously. It is to provide a vapor deposition plasma reactor.

One aspect of the present invention for achieving the above technical problem relates to a physical vapor deposition plasma reactor having a multi-source target assembly. The physical vapor deposition plasma reactor of the present invention comprises: a reactor body; A multi-source target assembly having a plurality of divided source target units installed in the reactor body; And a main power supply source for supplying radio frequency power to the plurality of source target units.

In one embodiment, a distribution circuit for distributing the radio frequency power provided from the main power source to the plurality of source target units.

In one embodiment, an impedance matcher is arranged between the main power supply and the distribution circuit to perform impedance matching.

In one embodiment, the distribution circuit comprises a current balancing circuit for adjusting the balance of the current supplied to the plurality of source target units.

In one embodiment, the current balancing circuit includes a plurality of transformers for balancing the current by driving the plurality of source target units in parallel, the primary side of the plurality of transformers are connected in series, the secondary side is a plurality of capacitive coupling It is connected to correspond to the electrode.

In an embodiment, the secondary sides of the plurality of transformers each include a grounded middle tab, one end of the secondary side outputs a constant voltage and the other end of a negative voltage, and the constant voltage is a constant voltage of the plurality of source target units. The negative voltage as an electrode is provided to negative voltage electrodes of the plurality of source target units.

In one embodiment, the current balancing circuit includes a voltage level adjusting circuit that can vary the current balancing adjusting range.

In one embodiment, the current balancing circuit comprises a compensation circuit for compensation of leakage current.

In one embodiment, the current balancing circuit includes a protection circuit for preventing damage due to transient voltage.

In one embodiment, the multi-source target assembly includes a target mounting plate on which the plurality of source target units are mounted.

In one embodiment, an insulating layer is formed between the source target unit and the target mounting plate.

In one embodiment, the target mounting plate includes a plurality of gas injection holes, and includes a gas supply unit for supplying gas into the reactor body through the gas injection holes.

In one embodiment, the gas supply has one gas supply channel or two or more independent gas supply channels.

In one embodiment, the reactor body is provided with a support on which a substrate to be processed is placed, and the support is either biased or unbiased.

In one embodiment, the support is biased by a single frequency power supply or two or more different frequency power supplies.

In one embodiment, the support includes an electrostatic chuck.

In one embodiment, the support comprises a heater.

In one embodiment, the support has a structure that is linearly or rotationally movable parallel to the substrate to be processed, and includes a drive mechanism for linearly or rotationally moving the support.

In one embodiment, the source target unit includes a target electrode that functions as a source target and a capacitive coupling electrode.

In one embodiment, the target electrode comprises one or more magnets.

In one embodiment, the source target unit includes a capacitive coupling electrode and a source target cover mounted to the outside of the capacitive coupling electrode.

In one embodiment, the capacitively coupled electrode comprises one or more magnets.

In example embodiments, the plurality of source target units may include a plurality of constant voltage electrodes and a plurality of negative voltage electrodes, and the arrangement of the constant voltage electrodes and the negative voltage electrodes may be arranged in an alternating linear arrangement structure and in a matrix form. And at least one array structure selected from among structures, mutually alternating spiral array structures, and mutually alternating concentric array structures.

In example embodiments, the plurality of constant voltage electrodes and the plurality of negative voltage electrodes include one or more structures selected from a barrier structure, a plate structure, a protrusion structure, a column structure, an annular structure, a spiral structure, and a linear structure.

In one embodiment, the reactor body includes a laser source for constructing a multi-laser scanning line consisting of a plurality of laser scanning lines.

In one embodiment, the reactor body includes a laser transmission window for scanning a laser beam therein, and the laser source allows the laser beam to be scanned into the reactor body through the laser transmission window so that the multi-laser. One or more laser sources for forming the scanning line.

In one embodiment, the laser transmission window comprises two windows configured to face the side wall of the reactor body, wherein the laser source comprises a laser beam generated from the one or more laser sources between the two windows. It includes a plurality of reflectors reflecting to form the multi-laser scanning line.

In one embodiment, the multi-laser scanning line is a structure located between the electric field formed between the plurality of target source units, between the plurality of target source units and the support on which the substrate to be processed provided in the reactor body is placed. At least one selected from among a structure located in, or a structure located between the gas injection hole for introducing the reaction gas into the reactor body and the plurality of target source unit.

In one embodiment, the relative arrangement structure of the multi-laser scanning line and the plurality of target source unit is a reaction gas introduced into the reactor body is the electrical energy by the target source unit and the thermal energy by the multi-laser scanning line A structure that receives a mixed structure, a structure in which a reaction gas introduced into the reactor body first receives electrical energy transferred from the plurality of target source units, or a reaction gas introduced into the reactor body is generated by the multi-laser scanning line. It includes one or more structures selected from the structures that first receive thermal energy.

According to another aspect of the present invention, a physical vapor deposition plasma reactor includes: a first reactor body constituting a first plasma reactor; A second reactor body constituting a second plasma reactor; A first multi-source target assembly installed with a plurality of divided source target units and installed inside the first reactor body; A second multi-source target assembly installed with a plurality of divided source target units and installed inside the second reactor body; And a main power supply for supplying radio frequency power to each of the plurality of source target units of the first and second multi-source target assemblies.

In one embodiment, a distribution circuit for distributing the radio frequency power provided from the main power source to each of a plurality of source target units of the first and second multi-source target assemblies.

In one embodiment, an impedance matcher is arranged between the main power supply and the distribution circuit to perform impedance matching.

In one embodiment, the distribution circuit comprises a current balancing circuit that balances the current supplied to the plurality of capacitively coupled electrodes of the first and second multi-source target assemblies.

In an embodiment, the current balancing circuit includes a plurality of transformers for balancing current while driving the plurality of capacitive coupling electrodes of the first and second capacitive coupling electrode assemblies in parallel, wherein the primary side of the plurality of transformers is The radio frequency is connected in series between the power input terminal and the ground, the secondary side is connected to the plurality of capacitive coupling electrodes of the first and second capacitive coupling electrode assembly.

In an embodiment, the secondary sides of the plurality of transformers each include a grounded middle tab, one end of the secondary side outputs a constant voltage and the other end of a negative voltage, and the constant voltage is a constant voltage of the plurality of source target units. The negative voltage as an electrode is provided to negative voltage electrodes of the plurality of source target units.

In one embodiment, the current balancing circuit includes a voltage level adjusting circuit that can vary the current balancing adjusting range.

In one embodiment, the current balancing circuit comprises a compensation circuit for compensation of leakage current.

In one embodiment, the current balancing circuit includes a protection circuit for preventing damage due to transient voltage.

In one embodiment, the first and second multi-source target assemblies include a source target mounting plate on which each of a plurality of source target units is mounted.

In one embodiment, an insulating layer is formed between the source target unit and the target mounting plate.

In one embodiment, each electrode mounting plate of the first and second multi-source target assembly includes a plurality of gas injection holes, through which the gas into the interior of the first and second reactor body It includes a gas supply for supplying.

In one embodiment, the gas supply unit comprises a plurality of gas supply pipes.

In one embodiment, the plurality of gas supply pipes each include a gas control valve capable of independently controlling the gas supply flow rate.

In one embodiment, the gas supply has one gas supply channel or two or more independent gas supply channels.

In one embodiment, the first and second reactor bodies are provided with a support on which a substrate to be processed is placed, and the support is either biased or unbiased.

In one embodiment, the support is biased by a single frequency power supply or two or more different frequency power supplies.

In one embodiment, the support includes an electrostatic chuck.

In one embodiment, the support comprises a heater.

In one embodiment, the support has a structure capable of linear or rotational movement parallel to the substrate to be processed, and includes a driving mechanism for linearly or rotationally moving the support.

In one embodiment, the source target unit includes a target electrode that functions as a source target and a capacitive coupling electrode.

In one embodiment, the target electrode comprises one or more magnets.

In one embodiment, the source target unit includes a capacitive coupling electrode and a source target cover mounted to the outside of the capacitive coupling electrode.

In one embodiment, the capacitively coupled electrode comprises one or more magnets.

In example embodiments, the plurality of source target units may include a plurality of constant voltage electrodes and a plurality of negative voltage electrodes, and the arrangement of the constant voltage electrodes and the negative voltage electrodes may be arranged in an alternating linear arrangement structure and in a matrix form. And at least one array structure selected from among structures, mutually alternating spiral array structures, and mutually alternating concentric array structures.

In example embodiments, the plurality of constant voltage electrodes and the plurality of negative voltage electrodes include one or more structures selected from a barrier structure, a plate structure, a protrusion structure, a column structure, an annular structure, a spiral structure, and a linear structure.

In one embodiment, a laser source for constructing each of the multi-laser scanning lines comprising a plurality of laser scanning lines in the first and second reactor bodies.

In one embodiment, the first and second reactor bodies each comprise a laser transmission window for injecting a laser beam therein, the laser source being through the laser transmission window to the first and second reactor bodies. And one or more laser sources for causing the laser beam to be scanned into the to form the multi-laser scanning line.

In one embodiment, the laser transmission window comprises two windows each configured to face each side wall of the first and second reactor bodies, and the laser source is adapted to receive a laser beam generated from the one or more laser sources. And a plurality of reflectors reflecting each of the two windows therebetween to form the multi laser scanning line.

In one embodiment, the multi-laser scanning line is a structure positioned between the electric field formed between the plurality of source target units, between the plurality of source target units and the support on which the substrate to be processed provided in the reactor body is placed. At least one selected from among a structure located in the structure, or a structure located between the gas injection hole for introducing the reaction gas into the first and second reactor body and the plurality of source target units.

In one embodiment, the relative arrangement structure of the multi-laser scanning line and the plurality of source target units, the reaction gas flowing into the first and second reactor body is the electrical energy by the source target unit and the multi-laser scanning A structure that accepts thermal energy by a line in a mixed manner, a structure in which a reaction gas introduced into the first and second reactor bodies first receives electrical energy delivered from the plurality of source target units, or the first and second The reaction gas introduced into the reactor body includes at least one of the structures selected first to receive thermal energy by the multi-laser scanning line.

According to the physical vapor deposition plasma reactor having the multi-source target assembly of the present invention, a large area is easily achieved by the plurality of source target units, and uniform physical vapor deposition is possible. By automatically balancing currents in parallel driving of the plurality of source target units, the capacitive coupling between the source target units can be uniformly controlled to uniformly generate high density plasma. It also reduces electron collisions to the substrate, which in turn improves deposition speed. In addition, since the multi-laser scanning line can be uniformly and widely scanned on the substrate, a large-area plasma reactor for processing a large-area substrate can be easily implemented. In addition, two or more large-area substrates can be processed at the same time, thereby increasing the substrate throughput per facility area.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment of the present invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings and the like may be exaggerated to emphasize a more clear description. It should be noted that the same members in each drawing are sometimes shown with the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

1 is a view showing a plasma reactor according to a first embodiment of the present invention.

Referring to FIG. 1, the physical vapor deposition plasma reactor 10 according to the first embodiment of the present invention includes a reactor body 11, a gas supply unit 20, and a multi-source target assembly 30. The reactor body 11 is provided with a support 12 on which the substrate 13 to be processed is placed. The lower portion of the reactor body 11 is configured with a multi-source target assembly 30 installed with a plurality of source target units 31, 33. The gas supply unit 20 is configured under the multi-source target assembly 30 to supply the reaction gas provided from the gas park (not shown) through the plurality of gas injection holes 32 configured in the multi-source target assembly 30. It feeds into the inside of (11). The radio frequency power generated from the main power supply 40 is supplied to the plurality of capacitively coupled electrodes 31 and 33 provided in the multi-source target assembly 30 through the impedance matcher 41 and the distribution circuit 50. . Inside the reactor body 11, a reaction gas, for example argon gas, is ionized by the multi-source target assembly 30 and argon ions are accelerated to the plurality of source target units 31 and 33 to generate target vapors. It is deposited on the processing substrate 13.

The plasma reactor 10 is provided with a support body 12 on which the reactor body 11 and the substrate 13 to be processed are placed. The reactor body 11 may be made of metal material such as aluminum, stainless steel, copper or coated metal, for example anodized aluminum or nickel plated aluminum. Alternatively, it may be made of refractory metal. As another alternative, it is also possible to fabricate the reactor body 11 in whole or in part with an electrically insulating material such as quartz, ceramic. As such, the reactor body 11 may be made of any material suitable for carrying out the intended plasma process. The structure of the reactor body 11 may have a structure suitable for uniform generation of the plasma, for example, a circular structure or a square structure, or any other structure depending on the substrate 13 to be processed.

The substrate 13 to be processed is, for example, substrates such as wafer substrates, glass substrates, plastic substrates, etc. for the manufacture of various devices such as semiconductor devices, display devices, solar cells, and the like. The plasma reactor 10 is connected to a vacuum pump 8. The plasma reactor 10 is subjected to plasma processing on the substrate 13 under low pressure below atmospheric pressure. However, the plasma reactor 10 of the present invention may also be implemented as an atmospheric pressure plasma processing system for treating a substrate under atmospheric pressure.

2 is a partial cross-sectional view of the bottom of the reactor showing a gas supply configured on top of the multi-source target assembly.

Referring to FIG. 2, the gas supply unit 20 is installed above the multi-source target assembly 30. The gas supply unit 20 includes a gas inlet 21 connected to a gas supply source (not shown), one or more gas distribution plates 22, and a plurality of gas inlets 23. The plurality of gas injection holes 23 are correspondingly connected to the plurality of gas injection holes 32 of the target mounting plate 34. The reaction gas input through the gas inlet 21 is evenly distributed by the one or more gas distribution plates 22 to allow the reactor body 11 to pass through the plurality of gas inlets 23 and the plurality of gas injection holes 32 corresponding thereto. Sprayed evenly inside Although not shown in the drawings, the gas supply unit 20 may include two or more separate gas supply channels to separate different gases and supply them to the inside of the reactor body 11 to increase plasma processing efficiency.

3 is a perspective view showing a multiple source target assembly.

Referring to FIG. 3, the multi-source target assembly 30 includes a plurality of source target units 31 and 33 for inducing plasma discharge by electrical capacitive coupling inside the reactor body 11. The plurality of source target units 31 and 33 are mounted to the target mounting plate 34. The target mounting plate 34 may be installed to form an upper portion of the reactor body 11. The plurality of source target units 31 and 33 have a structure in which a plurality of constant voltage electrodes 33 and a negative voltage electrode 31 that linearly cross the lower portion of the reactor body 11 are alternately arranged in parallel with an interval. Have The plurality of source target units 31 and 33 have a linear barrier structure protruding below the target mounting plate 34.

The target mounting plate 34 includes a plurality of gas injection holes 32. The plurality of gas injection holes 32 are arranged in the longitudinal direction at regular intervals between the plurality of source target units 31 and 33. The target mounting plate 34 may be made of a metal, a nonmetal, or a mixed material thereof. When the target mounting plate 34 is made of a metal material, an insulating layer 95 for electrical insulation is provided between the plurality of capacitive coupling electrodes 31 and 33. The target mounting plate 34 is installed to constitute the upper portion of the reactor body 11, but may be installed along the sidewall of the reactor body 11 to increase substrate processing efficiency. Or it may be installed on both the bottom and side walls. Although not shown in detail, the target mounting plate 34 may include a cooling channel or a heating channel for proper temperature control.

4 and 5 are cross-sectional views of the source target unit.

Referring to FIG. 4, the source target units 31 and 33 may include a capacitive coupling electrode 97 and a source target cover 96 mounted to the outside of the capacitive coupling electrode 97. The source target cover 96 preferably has a replaceable mounting structure. The material of the source target cover 96 may be selected as a necessary material according to the deposition process. That is, all the source target covers 96 mounted on the plurality of source target units 31 and 33 may be configured of the same material or include different materials. For example, in the semiconductor manufacturing process, aluminum, titanium, titanium nitride, cobalt silicide, copper silicide, and copper seed layers for copper plating may be widely used in a metal film forming process. Alternatively, it is possible to deposit a nonconductive thin film using a nonconductive material. As such, various kinds of target materials such as metals, alloys, oxides, nitrides, carbides, and the like may be used, and multiple configurations using different materials may be used. As a modification of the source target units 31 and 33, as shown in FIG. 5, the target target unit 98 may serve as a function of a source target and a function of a capacitive coupling electrode.

6 to 8 are diagrams showing a modified example in which a magnet is mounted on the source target unit.

6 and 7, the source target units 31 and 33 may include one or more magnets 99. For example, one or more magnets 99 may be mounted to the capacitive coupling electrode 97 in the longitudinal direction. The magnet 99 is composed of a permanent magnet, but may be composed of an electromagnet. Thus, by arranging permanent magnets or electromagnets in the source target units 31 and 33, ionization efficiency can be increased and sputtering efficiency can be improved. As shown in FIG. 8, the magnet 99 is installed in the same manner even when the source target units 31 and 33 are configured as the target electrode 98 which also functions as the source target and the capacitive coupling electrode. It is possible.

9 is a diagram illustrating various modified structures of a source target unit.

First, as shown in (a) of FIG. 9, the source target units 31 and 33 may have a barrier structure, the cross section of which may have a 'T' type structure, and the head portion of the target mounting plate 34. It may be installed to be fixed to the) or to have the reverse arrangement position. As shown in FIG. 9B, the source target units 31 and 33 may have a plate-like structure having a narrow width. As shown in (c) or (d) of FIG. 9, the source target units 31 and 33 may have a cross-sectional structure having a triangular or inverted triangular structure. As shown in (e) to (g) of Figure 9, it may have a cylindrical rod-shaped structure, a divided elliptic structure or a rod-shaped structure of a standing elliptic structure. As such, the source target units 31 and 33 may be embodied in various cross-sectional structures such as circular, elliptical, and polygonal structures.

10 to 20 illustrate various modifications of the planar structure and planar array structure of the source target unit.

First, as shown in FIG. 10, the plurality of constant voltage electrodes 33 and the plurality of negative voltage electrodes 31 constituting the plurality of source target units 31 and 33 are alternately arranged with each other, Gas injection holes 32 may be arranged. As illustrated in FIG. 11 or 12, the plurality of constant voltage electrodes 33 and the negative voltage electrodes 31 have the same electrodes arranged in the same column (or row) in a structure divided into predetermined lengths (see FIG. 11), or different electrodes. It may have this alternately arranged structure (see FIG. 12). As shown in FIG. 13 or 14, the plurality of source target units 31 and 33 may be configured of a plurality of rectangular or circular flat area electrodes arranged in a matrix form. As shown in FIG. 15, the plurality of source target units 31 and 33 may have a columnar structure such as a cylinder. As illustrated in FIGS. 16 to 20, the plurality of source target units 31 and 33 may have a flat plate spiral structure or a concentric circle structure arranged alternately with each other. In this structure, the plurality of source target units 31 and 33 may be composed of only one constant voltage electrode 33 and a negative voltage electrode 31. Alternatively, a plurality of constant voltage electrodes 33 and negative voltage electrodes 31 may be formed, but the overall arrangement may have a flat spiral structure or a concentric circle structure.

As described above, the plurality of source target units 31 and 33 may have one or more structures selected from a barrier structure, a plate structure, a protrusion structure, a pillar structure, a concentric or annular structure, a spiral structure, and a linear structure. In addition, the arrangement of the plurality of constant voltage electrodes 33 and the negative voltage electrodes 31 is also various arrangements such as alternating linear arrangement structures, matrix-like arrangement structures, mutually alternate spiral arrangement structures, and mutually alternating concentric array structures. It may have one or more array structures selected from the structure. Although not illustrated in detail, an insulating layer may be formed between the plurality of source target units 31 and 33.

Again, referring to FIG. 1, a support 12 for supporting the substrate 13 to be processed is provided inside the reactor body 11. The support 12 is connected and biased to bias power sources 42 and 43. For example, two bias power sources 42 and 43 that supply different radio frequency power are electrically connected to and biased through the impedance matcher 44 to the support 12. The dual bias structure of the support 12 facilitates plasma generation inside the reactor body 11, and further improves plasma ion energy control to improve process yield. Alternatively, it may be modified to a single bias structure. Alternatively, the support 12 may be modified to have a zero potential without supplying a bias power supply. The support 12 may be of a fixed type, but the support 12 may be implemented in a linear or rotational structure parallel to the substrate 13 to be processed. Although not shown in the drawing, an exhaust baffle may be configured at an inner lower portion of the reactor body 11 for uniform exhaust.

The plurality of capacitive coupling electrodes 31 and 33 are driven by receiving the radio frequency power generated from the main power supply 40 through the impedance matcher 41 and the distribution circuit 50. A capacitively coupled plasma is induced therein. The main power supply 40 may be configured using a radio frequency generator capable of controlling the output power without a separate impedance matcher. The radio frequency power generated from the main power supply 40 is provided to the plurality of source target units 31 and 33 through the impedance matcher 41. To this end, a distribution circuit 50 may be provided. The distribution circuit 50 distributes and supplies the radio frequency power provided from the main power supply 40 to the plurality of source target units 31 and 33 so that the plurality of source target units 31 and 33 are driven in parallel. Preferably, distribution circuit 50 may include a current balancing circuit. The current balancing circuit automatically balances the currents supplied to the plurality of source target units 31 and 33. Therefore, not only the large-area plasma can be generated by the plurality of source target units 31 and 33, but also the large-area plasma can be automatically balanced by parallel driving of the plurality of source target units 31 and 33. Can be generated and maintained more uniformly.

21 is a diagram illustrating an example of a distribution circuit.

Referring to FIG. 21, the distribution circuit 50 includes a current balancing circuit composed of a plurality of transformers 52 which drive the plurality of source target units 31 and 33 in parallel and balance the current. The primary side of the plurality of transformers 52 is connected in series between the power input terminal to which the radio frequency is input and the ground through the impedance matcher 41, and one end of the secondary side corresponds to the plurality of capacitive coupling electrodes 31 and 33. The other end is commonly grounded. The plurality of transformers 52 equally divide the voltage between the power input terminal and the ground and output the divided plurality of divided voltages to the corresponding constant voltage electrodes 33 among the plurality of source target units 31 and 33. Among the plurality of source target units 31 and 33, the negative voltage electrode 31 is commonly grounded.

Since the current flowing to the primary side of the plurality of transformers 52 is the same, the power supplied to the plurality of constant voltage electrodes 33 is also the same. When the impedance of any one of the plurality of source target units 31 and 33 is changed to change the amount of current, the plurality of transformers 52 may interact with each other to achieve a current balance. Therefore, the currents supplied to the plurality of source target units 31 and 33 are continuously and automatically adjusted uniformly with each other. In the plurality of transformers 52, the winding ratios of the primary side and the secondary side are basically set to 1: 1, but this can be changed.

Although not shown in the drawing, the distribution circuit 50 including the current balancing circuit as described above may include a protection circuit for preventing a transient voltage from occurring in the plurality of transformers 52. The protection circuit prevents the transient voltage from increasing in the transformer due to a defect such as when one of the plurality of transformers 52 is electrically open. The protection circuit of this function may be implemented by connecting a varistor to both ends of each primary side of the plurality of transformers 52, or may be implemented by using a constant voltage diode such as a Zener diode. . In addition, a compensation circuit such as a compensation capacitor 51 for compensating for leakage current may be added to each transformer 52 in the distribution circuit 50.

22 through 24 show various modifications of the distribution circuit.

Referring to FIG. 22, one variant of distribution circuit 50 includes an intermediate tab with the secondary sides of the plurality of transformers 52 respectively grounded. Here, one end of the secondary side outputs a constant voltage and the other end of a negative voltage. The constant voltage is provided to the constant voltage electrodes 33 of the plurality of source target units and the negative voltage is provided to the negative voltage electrodes 31 of the plurality of source target units.

With reference to FIGS. 23 and 24, another variant distribution circuit 50 may include a voltage level adjustment circuit 60 that can vary the current balancing adjustment range. The voltage level adjustment circuit 60 includes a coil 61 having a multi tap and a multi tap switching circuit 62 for connecting one of the multi taps to ground. The voltage level regulating circuit 60 applies a voltage level variable according to the switching position of the multi-tap switching circuit 62 to the distribution circuit 50, and the distribution circuit 50 is provided by the voltage level regulating circuit 60. The current balance adjustment range is varied by the voltage level determined.

25 is a view showing a plasma reactor according to a second embodiment of the present invention.

Referring to FIG. 25, the physical vapor deposition plasma reactor 10 according to the second embodiment of the present invention basically includes the same configuration as the first embodiment described above. Therefore, repeated description of the same configuration is omitted. A laser source 80 for constructing a multi-laser scanning line composed of a plurality of laser scan lines 82 is included in the reactor body 11. The support 12 has a structure capable of linearly or rotationally moving in parallel with the substrate 13 to be processed, and includes a drive mechanism 4 for linearly or rotationally moving the support 12. This moving structure of the support 12 is for increasing the processing efficiency of the substrate 13 to be processed. An exhaust baffle 6 may be configured at an inner lower portion of the reactor body 11 for uniform exhaust.

26 to 28 are views for explaining various configuration methods of a multi-laser scanning line.

With reference to FIGS. 26-28, the reactor body 11 has laser transmission windows 86, 87 for injecting a laser beam therein. The laser transmissive windows 86, 87 may be comprised of two windows 86, 87 configured to face the side walls of the reactor body 11. The two windows 86 and 87 may be installed to face the reactor body 11 so as to face each other, and may have a slit structure having the same length. The laser source 80 includes one or more laser sources 84. The laser source 84 scans a laser beam into the reactor body 11 through the laser transmission windows 86 and 87 to form a plurality of laser scan lines 82 inside the reactor body 11 to perform multi-laser scanning. Lines make up.

For example, as shown in FIG. 26, a plurality of laser sources 84 are arranged in proximity to the laser transmission window 86 on one side, and correspondingly, a plurality of laser sources 84 in the vicinity of the laser transmission window 87 on the other side. Laser terminations 85 may be configured. Alternatively, as shown in FIG. 27, a plurality of laser sources 84 may be configured at intervals, and a plurality of reflectors 83 may be disposed therebetween so that the laser beams generated from the laser sources 84 are separated by two laser transmission windows. The plurality of laser scanning lines 82 can be formed by reciprocating and reflecting with the 86 and 87 interposed therebetween. Alternatively, as shown in FIG. 28, only one laser source 84 may be configured and a plurality of reflectors 83 may be configured.

As such, the multi-laser scanning line may be configured inside the reactor body 11 using one or more laser sources 84, a plurality of reflectors 83, and one or more laser terminations 85. In this case, the plurality of laser scan lines 82 may be located between the plurality of source target units 31 and 33 and may be aligned with the plurality of gas injection holes 32. However, other various methods may be used to form the laser scanning line. And although a more detailed configuration and description have been omitted, those skilled in the art will appreciate that an optical system of a suitable structure may be used to scan a laser beam into the interior of the reactor body 11.

FIG. 29 is a diagram for describing various relative arrangement methods of a multi-laser scanning line and a source target unit.

As shown in FIG. 29A, a multi-laser scanning line composed of a plurality of laser scan lines 82 may take a structure positioned in an electric field formed between the plurality of source target units 31 and 33. . Alternatively, as shown in (b) of FIG. 29, the multi-laser scanning line may be a structure positioned between the plurality of source target units 31 and 33 and the support 12 provided inside the reactor body 11. have. Alternatively, as shown in (c) of FIG. 29, the multi-laser scanning line is positioned between the gas injection holes 32 for introducing the reaction gas into the reactor body 11 and the plurality of source target units 31 and 33. In this case, the plurality of source target units 31 and 33 may be spaced apart from the target mounting plate 34 at a predetermined interval.

Such a relative arrangement of the multi-laser scanning line and the plurality of source target units 31 and 33 is about which reaction gas first receives energy. That is, as illustrated in FIG. 29A, the reaction gas introduced into the reactor body 11 mixes electrical energy by the source target units 31 and 33 and thermal energy by the multi laser scanning line. It can take the structure that it accepts. Alternatively, as illustrated in (b) of FIG. 29, the reaction gas introduced into the reactor body 11 may take the structure of first receiving electrical energy delivered from the plurality of source target units 31 and 33. Alternatively, as illustrated in (c) of FIG. 29, the reaction gas introduced into the reactor body 11 may take the structure of first receiving thermal energy by the multi-laser scanning line.

The relative arrangement structure of the multi-laser scanning line and the plurality of source target units 31 and 33 may be used in combination of one or more structures, and for this purpose, the laser source 84 constituting the laser source 80, The configuration and arrangement of the reflector 83 and the laser termination portion 85 can be modified as appropriate.

Physical vapor deposition plasma reactor 10 of the present invention as described above is not only the structure in which the support structure 12 is installed in the lower portion of the reactor body 11 as shown in FIG. 11) may be modified to be implemented in a structure located on the top. In this case the exhaust baffle 6 and the gas outlet 3 will be configured on top of the reactor body 11, and the multi-source target assembly 30 and the gas supply 20 will be configured at the bottom of the reactor body 11. do.

30 is a view showing a plasma reactor according to a third embodiment of the present invention.

Referring to FIG. 30, the physical vapor deposition plasma reactor 2 according to the third embodiment of the present invention may include the first and second plasma reactors 10 and 15 and the first and second plasma reactors 10, which are configured in parallel. 15 and a gas supply unit 20 disposed between the first and second multi-source target assemblies 30 and 35, respectively, provided inside the 15. . In the first and second plasma reactors 10 and 15, supports 12 and 17 on which substrates 13 and 18 are placed are disposed to face the first and second multi-source target assemblies 30 and 35. Is installed to the side. The gas supply unit 20 is configured between the first and second multi-source target assemblies 30 to inject gas provided from a gas park (not shown) into the gas of the first and second multi-source target assemblies 30 and 35. The holes 32 and 37 are supplied into the first and second plasma reactors 10 and 15. The radio frequency power generated from the main power raid source 40 is supplied to the plurality of source target units provided in the first and second multi-source target assemblies 30 and 35 through the impedance matcher 41 and the distribution circuit 50. (31, 33, 36, 38). Although not specifically shown in the drawings, as described in the above-described second embodiment, a laser for constructing a multi-laser scanning line including a plurality of laser scanning lines inside the first and second reactor bodies 11 and 16 is described. It may be provided with a laser source for providing. In the third embodiment of the present invention, the repetitive detailed description of the same configuration as that of the above-described first and second embodiments is omitted.

31 is a perspective view showing the multiple source target assembly and the gas supply.

Referring to FIG. 31, the gas supply unit 20 is installed between the first and second multi-source target units 30 and 35. The gas supply unit 20 includes a plurality of gas supply pipes 21 connected to a gas supply source (not shown). The plurality of gas supply pipes 21 are each provided with a gas control valve 25 capable of independently controlling the gas supply flow rate. Alternatively, the gas supply flow rates may be collectively controlled with respect to the plurality of gas supply pipes 21 or may be configured to be controlled in a mixed manner. Alternatively, the plurality of gas supply pipes 21 may be configured to enable control of the total and individual gas supply flow rates. In the plurality of gas supply pipes 21, a plurality of gas injection ports 22 and 23 are connected to the plurality of gas injection holes 32 and 37 of the first and second target mounting plates 34 and 39. The gas provided from the gas supply source is evenly distributed through the plurality of gas supply pipes 21 so that the first and second plasma reactors are provided through the plurality of gas inlets 22 and 23 and the plurality of gas injection holes 32 and 37 corresponding thereto. It is sprayed evenly to the inside of (10, 15). The plurality of gas supply pipes 21 may be divided into two groups to form separate gas supply channels. It is possible to increase the uniformity of the plasma treatment by separating and supplying different gases.

The plurality of source target units 31, 33, 36, and 38 are driven by receiving the radio frequency power generated from the main power supply 40 through the impedance matcher 41 and the distribution circuit 50. 2 Induces capacitively coupled plasma inside the plasma reactor (10, 15). The main power supply 40 may be configured using a radio frequency generator capable of controlling the output power without a separate impedance matcher. The radio frequency power generated from the main power supply 40 is provided to the plurality of source target units 31, 33, 36, 38 through the impedance matcher 41. To this end, a distribution circuit 50 may be provided. The distribution circuit 50 distributes the radio frequency power provided from the main power supply 40 to the plurality of source target units 31, 33, 36, 38 to be driven in parallel. Preferably, the distribution circuit 50 is configured as a current balancing circuit so that the currents supplied to the plurality of source target units 31, 33, 36, 38 are automatically balanced with each other. Therefore, not only a large area of plasma can be generated by the plurality of target source units 31, 33, 36, 38, but also a large area of plasma can be generated by automatically balancing currents in parallel driving of the plurality of capacitive coupling electrodes. It can be generated and maintained more uniformly.

32 is a diagram illustrating an example of a distribution circuit.

Referring to FIG. 32, the distribution circuit 50 includes a plurality of transformers 52 that drive a plurality of source target units 31, 33, 36, 38 in parallel and balance current. The primary side of the plurality of transformers 52 is connected in series between the power input terminal to which the radio frequency is input and ground, and one end of the secondary side is connected to the plurality of source target units 31, 33, 36, 38, and the other end thereof. Are commonly grounded. The plurality of transformers 52 equally divide the voltage between the power input terminal and the ground and divide the divided plurality of divided voltages among the plurality of source target units 31, 33, 36, 38 corresponding constant voltage electrodes 33, 38. ) Among the plurality of source target units 31, 33, 36, and 38, the negative voltage electrodes 31 and 36 are commonly grounded.

Since the current flowing to the primary side of the plurality of transformers 52 is the same, the power supplied to the plurality of constant voltage electrodes 33 and 38 is also the same. When the impedance of any one of the plurality of source target units 31, 33, 36, 38 is changed to change the amount of current, the plurality of transformers 52 may interact with each other to achieve a current balance. Thus, the currents supplied to the plurality of source target units 31, 33, 36, 38 are continuously and automatically adjusted uniformly with each other. In the plurality of transformers 52, the winding ratios of the primary side and the secondary side are basically set to 1: 1, but this can be changed.

Although not shown in the drawing, the distribution circuit 50 including the current balancing circuit as described above may include a protection circuit for preventing a transient voltage from being generated in the plurality of transformers 52. The protection circuit prevents any one of the plurality of transformers 52 from being electrically open to increase the transient voltage on the transformer. The protection circuit of this function may be implemented by connecting a varistor to both ends of each primary side of the plurality of transformers 52, or may be implemented by using a constant voltage diode such as a Zener diode. . In addition, a compensation circuit such as a compensation capacitor 51 for compensating for leakage current may be added to each transformer 52 in the distribution circuit 50.

33 through 38 illustrate various variations of the distribution circuit.

Referring to FIG. 33, the distribution circuit 50 of one variation includes an intermediate tap in which the secondary sides of the plurality of transformers 52 are grounded, respectively, and outputs a constant voltage at one end of the secondary side and a negative voltage at the other end thereof. The constant voltage is provided to the constant voltage electrodes 33 and 38 of the plurality of source target units and the negative voltage is provided to the negative voltage electrodes 31 and 36 of the plurality of source target units.

Referring to FIG. 34, another variant distribution circuit 50a, 50b may be composed of separate first and second current balancing circuits 50a, 50b. The first and second current balancing circuits 50a and 50b are connected in parallel to the impedance matcher 41. The first current balancing circuit 50a is connected to the plurality of source target units 31 and 33 of the first multi-source target assembly 30, and the second current balancing circuit 50b is the second multi-source target assembly 35. Each of the plurality of source target units 36 and 38 corresponds to each other.

35 and 36, another variant distribution circuit 50 may include a voltage level adjustment circuit 60 that can vary the current balancing adjustment range. The voltage level adjustment circuit 60 includes a coil 61 having a multi tap and a multi tap switching circuit 62 for connecting one of the multi taps to ground. The voltage level adjusting circuit 60 applies a voltage level that is varied according to the switching position of the multi-tap switching circuit 62 to the current balancing circuit 50, and the distribution circuit 50 supplies the voltage level adjusting circuit 60 to the voltage level adjusting circuit 60. The current balance adjustment range is changed by the voltage level determined by the. 37 and 38, the voltage level adjusting circuits 60a and 60b may be provided in the same manner when the first and second distribution circuits 50a and 50b are configured.

The plasma reactor 2 according to the third embodiment of the present invention as described above illustrates an example in which the first and second plasma reactors 10 and 15 are implemented in a vertical parallel structure, as shown in FIG. 30. It may be implemented in a structure.

The embodiment of the physical vapor deposition plasma reactor having the multi-source target assembly of the present invention described above is merely illustrative, and those skilled in the art to which the present invention pertains can make various modifications and equivalents therefrom. It will be appreciated that examples are possible. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims. It is also to be understood that the present invention includes all modifications, equivalents, and substitutes within the spirit and scope of the invention as defined by the appended claims.

The physical vapor deposition plasma reactor having the multi-source target assembly of the present invention can be very usefully used in plasma processing processes for forming various thin films such as semiconductor integrated circuit fabrication, flat panel display fabrication, and solar cell fabrication. In particular, the physical vapor deposition plasma reactor of the present invention can generate a large area of plasma uniformly by a plurality of source target units, thereby enabling more uniform large area physical vapor deposition, and also driving a plurality of source target units in parallel. It is possible to generate and maintain a large area of plasma more uniformly by automatically balancing the current.

1 is a view showing a plasma reactor according to a first embodiment of the present invention.

2 is a partial cross-sectional view of the bottom of the reactor showing a gas supply configured on top of the multi-source target assembly.

3 is a perspective view showing a multiple source target assembly.

4 and 5 are cross-sectional views of the source target unit.

6 to 8 are diagrams showing a modified example in which a magnet is mounted on the source target unit.

9 is a diagram illustrating various modified structures of a source target unit.

10 to 19 illustrate various modifications of the planar structure and planar array structure of the source target unit.

21 is a diagram illustrating an example of a distribution circuit.

22 through 24 show various modifications of the distribution circuit.

25 is a view showing a plasma reactor according to a second embodiment of the present invention.

26 to 28 are views for explaining various configuration methods of a multi-laser scanning line.

FIG. 29 is a diagram for describing various relative arrangement methods of a multi-laser scanning line and a source target unit.

30 is a view showing a plasma reactor according to a third embodiment of the present invention.

31 is a perspective view showing the multiple source target assembly and the gas supply.

32 is a diagram illustrating an example of a distribution circuit.

33 through 38 illustrate various variations of the distribution circuit.

* Description of the symbols for the main parts of the drawings *

3: gas outlet 6: exhaust baffle

8: vacuum pump 10: plasma reactor

11: reactor body 12: support

13: substrate to be processed 20: gas supply part

21: gas inlet 22: gas distribution plate

23: gas inlet 24: gas supply pipe

25: gas control valve 26: gas injection hole

30: multi-source target assembly 31, 33: source target unit

32: gas injection hole 34: target mounting plate

40: main power source 41: impedance matcher

42, 43: bias power source 44: impedance matcher

50: distribution circuit 51: compensation capacitor

52: transformer 53: middle tap

60: voltage level regulating circuit 61: coil

62: multi-tap switching circuit 70: insulator region

71: conductor region 73: gas injection hole

80: laser source 82: multi laser scanning line

83: reflector 85: laser termination

95: insulation layer 96: source target cover

97: capacitively coupled electrode 98: target electrode

99: magnet

Claims (60)

Reactor body; A multi-source target assembly having a plurality of divided source target units installed in the reactor body; A main power supply source for supplying radio frequency power to said plurality of source target units; And And a distribution circuit for distributing the radio frequency power provided from the main power source to the plurality of source target units, wherein the distribution circuit includes a current balance circuit for adjusting a balance of current supplied to the plurality of source target units. Physical vapor deposition plasma reactor having a multiple source target assembly comprising. delete The method of claim 1, And a multi-source target assembly comprising an impedance matcher configured between the main power supply and the distribution circuit to perform impedance matching. delete The method of claim 1, The current balancing circuit includes a plurality of transformers for driving the plurality of source target units in parallel and balancing current; The primary side of the plurality of transformers are connected in series, the secondary side is a physical vapor deposition plasma reactor having a multiple source target assembly is connected to correspond to the plurality of capacitive coupling electrode provided in the source target unit. The method of claim 5, Secondary sides of the plurality of transformers each include a grounded middle tab, one end of the secondary side outputs a constant voltage and the other end a negative voltage, The plurality of source target units includes a constant voltage electrode and a negative voltage electrode, And the constant voltage is provided to the constant voltage electrode provided in the plurality of source target units, and the negative voltage is provided to the negative voltage electrode provided in the plurality of source target units. The method of claim 1, And the current balance circuit includes a voltage level control circuit capable of varying a current balance control range. The method of claim 1, Wherein the current balancing circuit comprises a compensation circuit for compensating for leakage current. The method of claim 1, Wherein said current balancing circuit comprises a protection circuit for preventing damage due to transient voltages. The method of claim 1, And said multi-source target assembly comprises a target mounting plate on which said plurality of source target units are mounted. The method of claim 10, Physical vapor deposition plasma reactor having a multi-source target assembly including an insulating layer configured between the source target unit and the target mounting plate. The method of claim 10, The target mounting plate includes a plurality of gas injection holes, Physical vapor deposition plasma reactor having a multi-source target assembly including a gas supply for supplying gas into the reactor body through the gas injection hole. The method of claim 12, Wherein said gas supply has a multi-source target assembly having one gas supply channel or two or more independent gas supply channels. The method of claim 1, Wherein the reactor body has a support on which a substrate to be processed is placed, wherein the support is either biased or unbiased. The method of claim 14, And the support has a multi-source target assembly biased by a single frequency power supply or two or more different frequency power supplies. The method of claim 14, And the support has a multi-source target assembly comprising an electrostatic chuck. The method of claim 14, The support is a physical vapor deposition plasma reactor having a multiple source target assembly comprising a heater. The method of claim 14, And the support has a structure that is linearly or rotationally movable parallel to the substrate to be processed and includes a drive mechanism for linearly or rotationally moving the support. The method of claim 1, And the source target unit comprises a multi-source target assembly comprising a target electrode that functions as both a source target and a capacitively coupled electrode. The method of claim 19, And the target electrode has a multi-source target assembly comprising one or more magnets. The method of claim 1, And the source target unit includes a capacitively coupled electrode and a source target cover mounted to the outside of the capacitively coupled electrode. The method of claim 21, And the capacitively coupled electrode has a multi-source target assembly comprising one or more magnets. The method of claim 1, The plurality of source target units includes a plurality of constant voltage electrodes and a plurality of negative voltage electrodes, The array structure of the constant voltage electrode and the negative voltage electrode includes a multi-source target including one or more array structures selected from an alternating linear array structure, a matrix-like array structure, an mutually alternate spiral array structure, and an alternate alternating concentric array structure. A physical vapor deposition plasma reactor having an assembly. 24. The method of claim 23, The plurality of constant voltage electrodes and the plurality of negative voltage electrodes have a physical vapor phase having a multi-source target assembly including at least one structure selected from a barrier structure, a flat structure, a protrusion structure, a pillar structure, an annular structure, a spiral structure, and a linear structure. Deposition plasma reactor. The method of claim 1, A physical vapor deposition plasma reactor having a multi-source target assembly including a laser source for constructing a multi-laser scanning line consisting of a plurality of laser scan lines within the reactor body. The method of claim 25, The reactor body includes a laser transmission window for injecting a laser beam therein, And the laser source comprises one or more laser sources for causing a laser beam to be scanned through the laser transmission window into the reactor body to form the multi laser scanning line. The method of claim 26, The laser transmission window comprises two windows configured to face the side wall of the reactor body, The laser source includes a physical vapor deposition plasma reactor having a multiple source target assembly comprising a plurality of reflectors reflecting a laser beam generated from the one or more laser sources with the two windows interposed to form the multi laser scanning line. . The method of claim 25, The multi laser scanning line A structure positioned between the electric fields formed between the plurality of target source units, a structure positioned between the plurality of target source units and a support on which a substrate to be processed provided in the reactor body is placed, or a reaction gas into the reactor body Physical vapor deposition plasma reactor having a multi-source target assembly including at least one of the structure selected between the gas injection hole and the plurality of target source unit flowing in. The method of claim 25, The relative arrangement structure of the multi-laser scanning line and the plurality of target source units The reaction gas flowing into the reactor body receives a mixture of electrical energy by the target source unit and the thermal energy by the multi-laser scanning line, the reaction gas flowing into the reactor body from the plurality of target source unit Physical vapor deposition having a multi-source target assembly comprising at least one of a structure that first receives the delivered electrical energy, or a structure in which the reactant gas introduced into the reactor body first receives thermal energy by the multi-laser scanning line. Plasma reactor. A first reactor body constituting a first plasma reactor; A second reactor body constituting a second plasma reactor; A first multi-source target assembly installed with a plurality of divided source target units and installed inside the first reactor body; A second multi-source target assembly installed with a plurality of divided source target units and installed inside the second reactor body; A main power source for supplying radio frequency power to each of a plurality of source target units of the first and second multi-source target assemblies; And A distribution circuit for distributing the radio frequency power provided from the main power source to a plurality of source target units of each of the first and second multi-source target assemblies, wherein the distribution circuit comprises: the first and second multiplexing circuits; A physical vapor deposition plasma reactor having a multiple source target assembly comprising a current balancing circuit for balancing the current supplied to the plurality of capacitively coupled electrodes of the source target assembly. delete 31. The method of claim 30, And a multi-source target assembly comprising an impedance matcher configured between the main power supply and the distribution circuit to perform impedance matching. delete 31. The method of claim 30, The current balancing circuit includes a plurality of transformers for balancing current while driving a plurality of source target units of the first and second multi-source target assemblies in parallel, The primary side of the plurality of transformers are connected in series between a power input terminal to which the radio frequency is input and ground, and the secondary side is connected to a plurality of source target units provided in the first and second multi-source target assemblies. A physical vapor deposition plasma reactor having a source target assembly. The method of claim 34, wherein Secondary sides of the plurality of transformers each include a grounded middle tab, one end of the secondary side outputs a constant voltage and the other end a negative voltage, The plurality of source target units includes a constant voltage electrode and a negative voltage electrode, And the constant voltage is provided to the constant voltage electrode provided in the plurality of source target units, and the negative voltage is provided to the negative voltage electrode provided in the plurality of source target units. 31. The method of claim 30, And the current balance circuit includes a voltage level control circuit capable of varying a current balance control range. 31. The method of claim 30, Wherein the current balancing circuit comprises a compensation circuit for compensating for leakage current. 31. The method of claim 30, Wherein said current balancing circuit comprises a protection circuit for preventing damage due to transient voltages. 31. The method of claim 30, Wherein said first and second multi-source target assemblies comprise a source target mounting plate on which each of said plurality of source target units is mounted. 40. The method of claim 39, Physical vapor deposition plasma reactor having a multi-source target assembly including an insulating layer configured between the source target unit and the target mounting plate. 40. The method of claim 39, Each target mounting plate of the first and second multi-source target assemblies includes a plurality of gas injection holes, Physical vapor deposition plasma reactor having a multi-source target assembly comprising a gas supply for supplying gas into the first and second reactor body through the gas injection hole. The method of claim 41, wherein And the gas supply unit has a multi-source target assembly including a plurality of gas supply tubes. The method of claim 42, wherein And the plurality of gas supply pipes each have a multi-source target assembly including a gas control valve capable of independently controlling a gas supply flow rate. The method of claim 41, wherein Wherein said gas supply has a multi-source target assembly having one gas supply channel or two or more independent gas supply channels. 31. The method of claim 30, Wherein said first and second reactor bodies have a support within which a substrate to be processed is placed, said support being either biased or unbiased. The method of claim 45, And the support has a multi-source target assembly biased by a single frequency power supply or two or more different frequency power supplies. The method of claim 45, And the support has a multi-source target assembly comprising an electrostatic chuck. The method of claim 45, The support is a physical vapor deposition plasma reactor having a multiple source target assembly comprising a heater. The method of claim 45, And the support has a structure that is linearly or rotationally movable parallel to the substrate to be processed and includes a drive mechanism for linearly or rotationally moving the support. 31. The method of claim 30, And the source target unit comprises a multi-source target assembly comprising a target electrode that functions as both a source target and a capacitively coupled electrode. 51. The method of claim 50, And the target electrode has a multi-source target assembly comprising one or more magnets. 31. The method of claim 30, And the source target unit includes a capacitively coupled electrode and a source target cover mounted to the outside of the capacitively coupled electrode. The method of claim 52, wherein And the capacitively coupled electrode has a multi-source target assembly comprising one or more magnets. 31. The method of claim 30, The plurality of source target units includes a plurality of constant voltage electrodes and a plurality of negative voltage electrodes, The array structure of the constant voltage electrode and the negative voltage electrode includes a multi-source target including one or more array structures selected from an alternating linear array structure, a matrix-like array structure, an mutually alternate spiral array structure, and an alternate alternating concentric array structure. A physical vapor deposition plasma reactor having an assembly. 55. The method of claim 54, The plurality of constant voltage electrodes and the plurality of negative voltage electrodes have a physical vapor phase having a multi-source target assembly including at least one structure selected from a barrier structure, a flat structure, a protrusion structure, a pillar structure, an annular structure, a spiral structure, and a linear structure. Deposition plasma reactor. 31. The method of claim 30, A physical vapor deposition plasma reactor having a multi-source target assembly including a laser source for constructing each of the multi-laser scanning lines of the plurality of laser scan lines within the first and second reactor bodies. The method of claim 56, wherein The first and second reactor bodies each comprising a laser transmission window for scanning a laser beam therein; The laser source physically has a multi-source target assembly comprising one or more laser sources for causing a laser beam to be scanned through the laser transmission window into the interior of the first and second reactor bodies to form the multi laser scanning line. Vapor deposition plasma reactor. The method of claim 57, The laser transmission windows comprise two windows each configured to face each sidewall of the first and second reactor bodies, The laser source includes physical vapor deposition having a multiple source target assembly comprising a plurality of reflectors reflecting a laser beam from the one or more laser sources, with each of the two windows interposed, to form the multi laser scanning line. Plasma reactor. The method of claim 56, wherein The multi laser scanning line A structure located between the electric fields formed between the plurality of source target units, a structure located between the plurality of source target units and a support on which a substrate to be processed provided in the reactor body is placed, or the first and second A physical vapor deposition plasma reactor having a multi-source target assembly comprising a gas injection hole for introducing a reaction gas into the reactor body and at least one of the structures positioned between the plurality of source target units. The method of claim 56, wherein The relative arrangement structure of the multi-laser scanning line and the plurality of source target units is The reaction gas flowing into the first and second reactor bodies receives a mixture of electrical energy by the source target unit and thermal energy by the multi-laser scanning line, and flows into the first and second reactor bodies. A structure in which a reactive gas first receives electrical energy delivered from the plurality of source target units, or a structure in which a reactive gas introduced into the first and second reactor bodies first receives thermal energy by the multi-laser scanning line A physical vapor deposition plasma reactor having a multi-source target assembly comprising one or more structures.

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