KR20100025699A - Capacitively coupled plasma reactor and plasma processing method using the same and semiconductor device manufactured thereby - Google Patents

Abstract

PURPOSE: A capacitively coupled plasma reactor, a plasma processing method using the same, and a semiconductor device manufactured by the same are provided to uniformly generate the plasma with a large area using a plurality of capacitively coupled electrodes. CONSTITUTION: A reactor body(11) forms a plasma discharge space. A common electrode(31) and a plurality of division electrodes(33) are formed on one side of the plasma discharge space. The common electrode and the division electrodes are capacitively coupled. A capacitively coupled electrode assembly(30) generates the plasma in the plasma discharge space. Two power supply units(40,41) or more selectively supply different frequency to the capacitively coupled electrode assembly. A switching circuit(44) selectively connects the power supply unit with the capacitively coupled electrode assembly.

Description

CAPACITIVELY COUPLED PLASMA REACTOR AND PLASMA PROCESSING METHOD USING THE SAME AND SEMICONDUCTOR DEVICE MANUFACTURED THEREBY}

The present invention relates to a capacitively coupled plasma reactor, and more particularly, to a capacitively coupled plasma reactor capable of generating a large area of plasma more uniformly, thereby increasing the plasma processing efficiency of a large area to be treated, and a plasma processing method using the same; It relates to a semiconductor device manufactured thereby.

Plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules. Active gases are widely used in various fields and are used in various semiconductor manufacturing processes for manufacturing devices such as integrated circuit devices, liquid crystal displays, solar cells, etc., for example, etching, deposition, cleaning, and ashing. It is variously used for ashing.

There are a number of plasma sources for generating plasma, and capacitive coupled plasma and inductive coupled plasma using radio frequencies are representative examples. Capacitively coupled plasma sources have the advantage of high process productivity compared to other plasma sources due to their high capacity for precise capacitive coupling and ion control. However, when the capacitively coupled electrode is enlarged in order to process an enlarged substrate, the electrode may be deformed or damaged by deterioration of the electrode. In this case, the electric field strength may be uneven, which may result in uneven plasma density and contaminate the inside of the reactor. In the case of an inductively coupled plasma source, it is also difficult to obtain a uniform plasma density when the area of the induction coil antenna is increased.

In recent years, the semiconductor manufacturing industry has been further improved due to various factors such as ultra miniaturization of semiconductor devices, the enlargement of silicon wafer substrates or substrates to be processed such as glass or plastic substrates for manufacturing semiconductor circuits, and the development of new materials to be processed. Plasma treatment technology is required. In particular, there is a need for improved plasma sources and plasma processing techniques that have good processing capabilities for large area substrates. Furthermore, various semiconductor manufacturing apparatuses using lasers have been provided. Semiconductor manufacturing processes using lasers have been widely applied to various processes such as deposition, etching, annealing, cleaning, and the like on a substrate to be processed. In the case of a semiconductor manufacturing process using such a laser, the above-described problems exist.

The enlargement of the substrate to be processed causes the enlargement of the entire production equipment. Larger production facilities increase the overall plant area, resulting in increased production costs. Therefore, there is a need for a plasma reactor and a plasma processing system capable of minimizing the installation area. In particular, in the semiconductor manufacturing process, productivity per unit area is one of the important factors affecting the price of the final product.

Many processes exist in the manufacture of semiconductor substrates. Since each process is mostly performed in a separate process chamber, the substrate to be processed in which one process is performed is transferred to a process chamber for proceeding to the next process. This transfer between process chambers needs to be as short as possible because it is a negative factor that increases manufacturing time. Or it would be highly desirable if different processes could be carried out alternately in one process chamber.

An object of the present invention is to provide a capacitively coupled plasma reactor capable of uniformly generating and maintaining a large area of plasma, a plasma processing method using the same, and a semiconductor device manufactured by the same.

Another object of the present invention is to provide a capacitively coupled plasma reactor capable of uniformly generating high density plasma by uniformly controlling the current supply of the capacitively coupled electrode, a plasma processing method using the same, and a semiconductor device manufactured by the same.

It is still another object of the present invention to provide a capacitively coupled plasma reactor capable of easily producing a large area and generating high density plasma uniformly, a plasma processing method using the same, and a semiconductor device manufactured by the same.

It is still another object of the present invention to provide a capacitively coupled plasma reactor capable of performing two or more substrate processing steps alternately and continuously in one plasma reactor, a plasma processing method using the same, and a semiconductor device manufactured by the same.

One aspect of the present invention for achieving the above technical problem relates to a capacitively coupled plasma reactor. The plasma reactor of the present invention comprises: a reactor body forming a plasma discharge space; And a capacitively coupled electrode assembly forming one surface of the plasma discharge space and having a common electrode and a plurality of split electrodes coupled to each other capacitively to generate plasma in the plasma discharge space.

In one embodiment, a switching circuit configured to provide a selective electrical connection between the at least two power sources and the capacitively coupled electrode assembly and at least two power sources for selectively supplying different frequencies to the capacitively coupled electrode assembly. Include.

In one embodiment, a current distribution circuit for controlling the distribution of currents flowing to the plurality of split electrodes.

In one embodiment, the current distribution circuit includes an automatic current balance circuit for automatically adjusting the mutual balance of the current supplied to the plurality of split electrodes.

In example embodiments, the common electrode includes a common electrode body and a plurality of trench regions formed in the common electrode body, and the plurality of split electrodes are provided in the plurality of trench regions.

In one embodiment, the capacitively coupled electrode assembly includes a plurality of insulating members, one end of which is mounted at one surface of the common electrode and one partition electrode at the other end thereof.

In one embodiment, the common electrode includes a common electrode body and a plurality of gas injection holes penetrating the common electrode body, and from the outside of the reactor body to the inside of the reactor body through the plurality of gas injection holes of the common electrode. It includes a gas supply for supplying a process gas.

In one embodiment, the gas supply comprises two or more independent gas supply channels.

The common electrode body may have a plurality of trench regions, and the plurality of gas injection holes may include a first group of gas injection holes formed in the plurality of trench regions and a second group formed in addition to the plurality of trench regions. It includes a gas injection port.

In one embodiment, the plurality of split electrodes are provided in the plurality of trench regions.

In one embodiment, further comprising a remote plasma generator for supplying a remote plasma into the reactor body through the gas supply.

In one embodiment, the capacitively coupled electrode assembly further comprises a radio frequency antenna.

In one embodiment, the capacitively coupled electrode assembly includes a plurality of permanent magnets arranged alternately with different polarities.

In one embodiment, the capacitively coupled electrode assembly further comprises a cooling channel.

In one embodiment, the apparatus further comprises a laser transmission window formed in a portion of the reactor body and a laser source for scanning a laser into the reactor body through the laser transmission window.

Another aspect of the invention relates to a plasma processing method using a capacitively coupled plasma reactor. According to another aspect of the present invention, there is provided a plasma processing method comprising: providing a reactor body forming a plasma discharge space; Providing a capacitively coupled electrode assembly forming one surface of the plasma discharge space and having a common electrode and a plurality of split electrodes coupled to each other and generating plasma in the plasma discharge space; Loading an object to be processed into the reactor body; Driving the common electrode and the plurality of split electrodes at a first frequency to introduce a first process gas into the reactor body and to proceed with the first process; And driving the common electrode and the plurality of split electrodes at a second frequency different from a first frequency to introduce a second process gas into the reactor body and to proceed with the second process.

In one embodiment, the first process and the second process are plasma enhanced chemical vapor deposition (PECVD) processes.

In one embodiment, the first process and the second process are alternately repeated.

In one embodiment, the method comprises laser scanning into the reactor body during the first or second process.

Another aspect of the invention relates to a semiconductor device. A semiconductor manufacturing apparatus according to another aspect of the present invention has a laminated thin film manufactured by the plasma processing method using the capacitively coupled plasma reactor described above.

According to the capacitively coupled plasma reactor of the present invention and the plasma processing method using the same, a large area of plasma can be uniformly generated by the plurality of capacitively coupled electrodes. In parallel driving of the plurality of capacitively coupled electrodes, a current balance is automatically achieved to uniformly control the capacitive coupling of the capacitively coupled electrodes to uniformly generate high-density plasma. The plurality of capacitively coupled electrodes can be easily formed to increase a large area of the plasma.

In addition, since the capacitively coupled electrode assembly can be selectively driven at a selected one of two or more different frequencies, two or more different processes can be performed successively in one plasma reactor to maximize productivity. have.

In addition, the multi-laser scanning line along with the plurality of capacitive coupling electrodes can be uniformly and widely scanned on the upper portion of the substrate, thereby generating a large-area plasma uniformly and a large area for processing a large-area target substrate. The plasma reactor can be easily implemented.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment of the present invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings and the like may be exaggerated to emphasize a more clear description. It should be noted that the same members in each drawing are sometimes shown with the same reference numerals. Detailed descriptions of well-known functions and configurations that are determined to unnecessarily obscure the subject matter of the present invention are omitted.

1 is a view showing a plasma reactor according to a preferred embodiment of the present invention.

Referring to FIG. 1, a plasma reactor 10 according to a preferred embodiment of the present invention includes a reactor body 11, a gas supply unit 20, and a capacitively coupled electrode assembly 30. Although the detailed description will be described later, the capacitive coupling electrode assembly 30 includes a flat common electrode 31 and a plurality of split electrodes 33. The inside of the reactor body 11 is provided with a substrate support 12 on which the substrate 13 to be processed is placed. The capacitively coupled electrode assembly 30 is disposed on the upper part of the reactor body 11 opposite to the substrate support 120, and the gas supply part 20 is formed thereon, and the reactor body 11 and the capacitively coupled electrode assembly ( An insulating member 25 is provided between the 30 to provide electrical insulation. The gas provided from the gas supply system 60 having a plurality of gas sources 61 is supplied to the gas supply 20 and the capacitively coupled electrode assembly ( It is supplied to the interior of the plasma reactor 10 through 30. The capacitively coupled electrode assembly 30 is selectively driven by two or more different frequencies to induce a capacitively coupled plasma inside the plasma reactor 10. Plasma reactor Plasma processing is performed on the substrate 13 by the plasma generated inside the 10.

The plasma reactor 10 includes a reactor support 11 and a substrate support 12 on which a substrate 13 to be processed is placed. The reactor body 11 is connected to a vacuum pump 8. The reactor body 11 can be made of a metallic material such as aluminum, stainless steel, copper. Or may be rewritten with coated metal, for example anodized aluminum or nickel plated aluminum. Alternatively, a composite metal in which carbon nanotubes are covalently bonded may be used. Or it may be rewritten as a refractory metal. As an alternative, it is also possible to reconstruct the reactor body 11 in whole or in part with an electrically insulating material such as quartz, ceramic. As such, the reactor body 11 may be made of any material suitable for carrying out the intended plasma process. The structure of the reactor body 11 may have a structure suitable for uniform generation of the plasma, for example, a circular structure or a square structure, or any other structure depending on the substrate 13 to be processed. The substrate 13 to be processed is, for example, substrates such as wafer substrates, glass substrates, plastic substrates, etc. for the manufacture of various devices such as semiconductor devices, display devices, solar cells, and the like. In the embodiment of the present invention, the plasma reactor 10 is subjected to plasma treatment on the substrate 13 under low pressure below atmospheric pressure. However, the capacitively coupled plasma reactor of the present invention can also be used in an atmospheric plasma processing system for processing a substrate under atmospheric pressure.

The substrate support 12 for supporting the substrate 13 to be processed is provided in the plasma reactor 10. The substrate support 12 is connected and biased to bias power sources 46 and 47. For example, two bias power sources 46 and 47 that supply different radio frequency power sources are electrically connected to the substrate support 12 through a common impedance matcher 48 (or each impedance matcher). . The dual bias structure of the substrate support 12 facilitates plasma generation inside the plasma reactor 10 and further improves plasma ion energy control to improve process productivity. Alternatively, it may be modified to a single bias structure. Alternatively, the substrate support 12 may be modified to have a zero potential without supplying bias power. The substrate support 12 may include an electrostatic chuck. Alternatively, the substrate support 12 may include a heater. Basically, the substrate support 12 is composed of a structure that can be lifted or lowered vertically. Alternatively, the substrate support 12 has a structure capable of linearly or rotationally moving in parallel with the capacitively coupled electrode assembly 30. In such a movable structure, a drive mechanism for linearly or rotationally moving the substrate support 12 may be included. An exhaust baffle (not shown) may be configured at the lower portion of the reactor body 11 for uniform exhaust of the gas.

The plasma reactor 10 includes two or more power sources 40, 41, a switching circuit 44, and a controller 66 for selectively supplying different frequencies to the capacitively coupled electrode assembly 30. In one embodiment, two first and second power sources 40, 41 are provided. The first and second power sources 40, 41 generate different frequencies f1, f2, respectively. For example, the first power supply 40 generates a frequency of 1 MHz or more, and the second power supply 40 generates a frequency lower than 1 MHz. The first and second power sources 40, 41 may be configured using a radio frequency generator capable of controlling the output without a separate impedance matcher. In this embodiment, an example having two first and second power sources 40 and 41 has been described, but three or more power sources for generating three or more different radio frequencies may be provided. Alternatively, one power source capable of frequency modulation may be used.

A switching circuit 44 is provided between the first and second power sources 40, 41 and the capacitively coupled electrode assembly 30 to provide a selective electrical connection. The switching circuit 44 may be configured as a relay switch, for example. The switching circuit 44 has two input stages and one output stage. The two inputs of the switching circuit 44 are connected to the first and second power sources 40, 41, respectively, via the first and second impedance matchers 42, 43. The switching circuit 44 is switched under the control of the controller 66 so that any one of the two input terminals is electrically connected to the output terminal. Thus either one of the different radio frequencies f1, f2 generated from the first and second power sources 40, 41 is selectively supplied to the capacitively coupled electrode assembly 30. The controller 66 organically controls the first and second power sources 40 and 41 and the switching circuit 44 and controls the overall operation of the plasma reactor 10. In addition, the controller 66 controls the gas supply system 60 to supply one or more gases associated with a process to be executed in the plasma reactor 10 to the inside of the reactor body 11.

FIG. 2 is a timing diagram for explaining that different frequencies are alternately supplied to the capacitive coupling electrode assembly for alternate process progression, and FIG. 3 is a thin film alternately formed on a substrate to be processed by alternating process progress. It is sectional drawing of the to-be-processed substrate which illustrates that.

2 and 3, the plasma reactor 10 alternately performs two different processes on the substrate 13 using the capacitively coupled electrode assembly 30 driven at different frequencies. . For example, after the substrate to be processed is loaded into the reactor body 11, a gas for performing the first process P_ # 1 is supplied. Subsequently, the first frequency f1 generated from the first power supply 40 is supplied to the capacitively coupled electrode assembly 30 to generate plasma to proceed with the first process P_ # 1.

When the first process P_ # 1 is completed, the supply of the first frequency f1 is turned off, and gas for proceeding the second process P_ # 2 is supplied into the reactor body 11. Subsequently, a second frequency f2 generated from the second power supply 41 is supplied to the capacitively coupled electrode assembly 30 to generate plasma to perform the second process P_ # 2. The first and second power supplies 40 and 41 are controlled by the controller 66 and the other one is stopped when one is in operation.

The first process P_ # 1 and the second process P_ # 2 may be alternately repeated. The first and second processes P_ # 1 and P_ # 2 may be, for example, plasma enhanced chemical vapor deposition (PECVD) processes. By this alternate repetition process, alternately repeated thin films L1 and L2 are deposited on the substrate 13 as shown in FIG. 3. In the first process P_ # 1 and the second process P_ # 2, the air pressure inside the plasma reactor 10 may be the same air pressure or different air pressures, and the supplied gas may be the same or different gases. In addition, the process progress time may have the same process progress time or may have different process progress time.

Again, referring to FIG. 1, the gas supply unit 20 is installed above the capacitively coupled electrode assembly 30. The gas supply unit 20 may include two or more independent gas supply channels to independently supply different gases into the plasma reactor 10. For example, the gas supply unit 20 may include a second gas inlet (2) to form a gas supply channel different from the upper gas manifold 23 connected to the first gas inlet 21 to form one gas supply channel. And a lower gas manifold 24 connected to 22. Although the upper and lower gas manifolds 23 and 24 are not shown in the drawings, gas distribution plates for gas distribution may be provided. The upper and lower gas manifolds 23, 24 are connected to a plurality of gas injection holes 32, 34 configured in the capacitively coupled electrode assembly 30. The plurality of gas injection holes 32 and 34 are formed in the trench region 35 of the common electrode 31 of the capacitively coupled electrode assembly 30, and the trench region of the first group may be described later. A second group of gas injection holes 32 are formed in a region other than 35. Different gases inputted through the first and second gas inlets 21, 22 are plasma through the plurality of gas injection ports 32, 34 via the upper gas manifold 23 and the lower gas manifold 24. It is evenly sprayed into the reactor 10. Independently supplying different gases may increase the efficiency of the plasma treatment.

Meanwhile, the remote plasma generator 65 may be connected to the upper portion of the gas supply unit 20. The remote plasma generator 65 cleans the interior of the plasma reactor 10 by, for example, supplying an active gas into the interior of the plasma reactor 10. Gas supplied from the gas supply system 60 may be provided to the gas supply unit 20 via or without the remote plasma generator 65. To this end, a plurality of gas valves 62, 63, and 64 may be provided in the gas supply path provided from the gas supply system 60. In addition, the active gas generated from the remote plasma generator 65 may be supplied to only one gas supply channel of the gas supply 20 or to both gas supply channels.

4 and 5 are perspective and cross-sectional views of the capacitively coupled electrode assembly.

4 and 5, the capacitively coupled electrode assembly 30 includes a flat common electrode 31 and a plurality of split electrodes 33 for generating capacitively coupled plasma discharges in the plasma reactor 10. It is provided. The common electrode 31 faces the substrate support 12 to form a ceiling of the reactor body 11. The common electrode 31 has a flat common electrode body and a plurality of trench regions 33 formed in parallel in the bottom of the body. The plurality of split electrodes 33 have a linear barrier structure and are dividedly provided in the plurality of trench regions 35. Insulating members 36 are respectively mounted in the plurality of trench regions 35 in the longitudinal direction, and one split electrode 33 is mounted at the lower end of each insulating member 36. The common electrode 31 is electrically grounded, and the plurality of split electrodes 33 are connected in parallel to the current distribution circuit 50. As will be described later, the current balancing circuit 50 includes a plurality of split electrodes of the radio frequency f1, f2 provided from either the first power supply 40 or the second power supply 41 through the switching circuit 44. Distribute and supply to (33).

The trench region 35 and the plurality of split electrodes 33 of the common electrode 31 have a linear structure arranged in parallel, but may be modified in various forms. For example, the common electrode 31 is installed to configure the ceiling of the reactor body 11, but may also constitute the side wall of the reactor body 11 to increase the plasma treatment efficiency. Or it may be installed on both the ceiling and side walls. As described above, the common electrode 31 and the plurality of split electrodes 33 may be modified in various ways such as planar structure, three-dimensional structure, cross-sectional structure, number, length, etc. in order to increase plasma generation efficiency or plasma processing efficiency. Capacitively coupled electrode assembly 30 may have a cooling channel or heating channel for proper temperature control.

The common electrode 31 includes a plurality of gas injection holes 32 and 34. The plurality of gas injection holes 32 and 34 include a first group of gas injection holes 34 formed in the trench region 35 and a second group of gas injection holes 32 formed in the region other than the trench region 35. do. The gas injection hole 34 of the first group penetrates through the insulating member 36 and the split electrode 32 but may have a different position (for example, reference numeral 43a in FIG. 7). Gas input through the first gas inlet 21 is injected into the reactor body 11 through the second group of gas injection holes 34 via the upper gas manifold 23, and the second gas inlet ( The gas input through 22 is injected into the reactor body 11 through the gas injection hole 34 of the first group via the lower gas manifold 24.

Again, referring to FIG. 1, the current of the radio frequency f1 or f2 generated from the first or second power supply 41 or 42 is transferred to the plurality of capacitively coupled electrode assemblies 30 through the current distribution circuit 50. Are supplied to two split electrodes 33 to induce a capacitively coupled plasma inside the plasma reactor 10. Preferably, the current distribution circuit 50 may be configured as an automatic current balance circuit for automatically adjusting the balance of the current supplied to the plurality of split electrodes 33. The automatic current balancing circuit automatically balances each of the currents supplied to the plurality of split electrodes 33. Therefore, not only the large area plasma can be generated by the plurality of split electrodes 33, but also the current is automatically balanced in parallel driving the plurality of capacitive coupling electrodes 33 to generate the large area plasma more uniformly. And maintain.

6 is a circuit diagram of a current distribution circuit.

Referring to FIG. 6, the current distribution circuit 50 includes a plurality of transformers 52 connected in series to configure an automatic current balancing circuit. The plurality of transformers 52 are connected in parallel to the plurality of split electrodes 33 to drive the respective electrodes in parallel and constitute an automatic current balancing circuit which automatically balances current with each other. The primary side of the plurality of transformers 52 is connected in series between a power input terminal (output terminal of the switching circuit 44) to which radio frequency is input and ground, and one end of the secondary side is connected to a corresponding plurality of split electrodes 33. And the other end is commonly grounded. The plurality of transformers 52 equally divide the voltage between the power input terminal and the ground and output the divided plurality of divided voltages to the corresponding plurality of divided electrodes 33.

At this time, the current flowing to the primary side of the plurality of transformers 52 is the same, so that each power supplied to the plurality of split electrodes 33 is also the same. When the impedance of any one of the plurality of split electrodes 33 is changed to change the amount of current, the plurality of transformers 52 may interact with each other to achieve a current balance. Therefore, the currents supplied to the plurality of split electrodes 33 are automatically adjusted continuously uniformly with each other. In the plurality of transformers 52, the winding ratios of the primary side and the secondary side are basically set to 1: 1, but this can be changed.

Although not shown in the drawing, the current distribution circuit 50 including the automatic current balancing circuit as described above may include a protection circuit for preventing the transient voltage from occurring in the plurality of transformers 52. The protection circuit prevents the transient voltage from being increased in the transformer due to a defect such that one of the plurality of transformers 52 is electrically open. The protection circuit of such a function may be implemented by connecting a varistor to both ends of each primary side of the plurality of transformers 52, or may be implemented using a constant voltage diode such as a Zener diode. have. In addition, a compensation circuit for compensating for leakage current, such as a compensation capacitor 51, may be added to each transformer 52 in each of the current distribution circuits 50. In this manner, the current distribution circuit can be added to another type of modification or circuit configuration for more complete current distribution.

FIG. 7 is a partial cross-sectional view illustrating a modification in which a radio frequency antenna is embedded in the capacitive coupling electrode assembly of FIG. 2.

Referring to FIG. 7, the capacitive coupling electrode assembly 30 may additionally include a radio frequency antenna 57 for more uniform generation and control of high density plasma. For example, the radio frequency antenna 57 may form a through hole in the insulating member 36 and be embedded there. The radio frequency antenna 57 is electrically connected through a impedance matcher 56 to a third power source 55 generating a radio frequency. The third power source 55 is interlocked with the first or second power source 40 or both, and drives the radio frequency antenna 57. The radio frequency antenna 57 may be formed of a conductive tube in the form of a pipe, and may serve as a cooling channel for supplying cooling water. Here, the position where the second group of gas injection holes 34a are formed may be changed to the vicinity of the ceiling of the trench region 35.

FIG. 8 is a view illustrating another modified example in which a permanent magnet is embedded in the capacitively coupled electrode assembly of FIG. 2.

Referring to FIG. 8, the capacitively coupled electrode assembly 30 may be provided with a plurality of permanent magnets for more uniform generation and control of high density plasma. For example, a plurality of permanent magnets 58 are alternately polarized in the common electrode 31 with the trench region 35 interposed therebetween.

FIG. 9 is a view illustrating another modified example in which a radio frequency antenna is installed on the capacitive coupling electrode assembly of FIG. 2.

Referring to FIG. 9, the capacitively coupled electrode assembly 30 may be provided with a radio frequency antenna 70 on the common electrode 31 for more uniform generation and control of the high density plasma. The radio frequency antenna 70 may be covered by the magnetic core 71, wherein the magnetic poles of the magnetic core 71 are installed to face the inside of the reactor body 11.

10 is a diagram illustrating an example in which a multi-laser scanning line is formed inside a plasma reactor.

Referring to FIG. 10, for more uniform generation and control of high density plasma, the plasma reactor 10 is a laser source for constructing a multi-laser scanning line 73 consisting of a plurality of laser scan lines inside the reactor body 11. And 72. The laser source 72 provides a laser for constructing a multi-laser scanning line 73 consisting of a plurality of laser scan lines inside the reactor body 11. The multi laser scanning line 73 may be located near the bottom of the capacitively coupled electrode assembly 30. It may be desirable for the multi laser scanning line 73 to be aligned below the plurality of gas injection holes 32, 34. However, other various methods may be used to form the laser scanning line. And a more detailed configuration and description has been omitted, but the laser transmission window is provided on the side wall of the reactor body 11 to scan the laser beam into the reactor body 11, it can be used that the optical system of the appropriate structure can be used Those skilled in the art will appreciate. Although the case where the multi-laser scanning line 73 is added to the plasma discharge space into the reactor body 11 is illustrated, it may be configured to be directly scanned on the substrate 13 to be processed.

The embodiment of the capacitively coupled plasma reactor of the present invention, the plasma processing method using the same, and the semiconductor device manufactured by the same are merely exemplary, and those of ordinary skill in the art to which the present invention pertains are intended. It will be appreciated that various modifications and equivalent other embodiments are possible. Therefore, it will be understood that the present invention is not limited only to the form mentioned in the above detailed description. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims. It is also to be understood that the present invention includes all modifications, equivalents, and substitutes within the spirit and scope of the invention as defined by the appended claims.

 The capacitively coupled plasma reactor of the present invention and a plasma processing method using the same can be very useful for manufacturing various kinds of semiconductor devices, such as fabrication of semiconductor integrated circuits, fabrication of flat panel displays, and fabrication of solar cells.

1 is a view showing a plasma reactor according to a preferred embodiment of the present invention.

FIG. 2 is a timing diagram for explaining that different frequencies are alternately supplied to the capacitively coupled electrode assembly in order to perform an alternate process.

3 is a cross-sectional view of a substrate to be treated to illustrate that thin films are alternately formed on the substrate to be processed by alternating process steps.

4 and 5 are perspective and cross-sectional views of the capacitively coupled electrode assembly.

6 is a circuit diagram of a current distribution circuit.

FIG. 7 is a partial cross-sectional view illustrating a modification in which a radio frequency antenna is embedded in the capacitive coupling electrode assembly of FIG. 2.

FIG. 8 is a view illustrating another modified example in which a permanent magnet is embedded in the capacitively coupled electrode assembly of FIG. 2.

FIG. 9 is a view illustrating another modified example in which a radio frequency antenna is installed on the capacitive coupling electrode assembly of FIG. 2.

10 is a diagram illustrating an example in which a multi-laser scanning line is formed inside a plasma reactor.

* Description of the symbols for the main parts of the drawings *

8: vacuum pump 10: plasma reactor

11: reactor body 12: substrate support

13: substrate to be processed 20: gas supply part

21: first gas inlet 22: second gas inlet

23: upper gas manifold 24: lower gas manifold

25: insulating member 30: capacitive coupling electrode assembly

31: common electrode 32: gas nozzle

33: split electrode 34: gas nozzle

35: trench 36: insulation member

40: first power source 41: second power source

42, 43: impedance matcher 44: switching circuit

45: current distribution circuit 46, 47: bias power supply

48: impedance matcher 50: current distribution circuit

51: compensation capacitor 52: transformer

55: third power source 56: impedance matcher

57: radio frequency antenna 58: insulated tube

60: gas supply system 61: gas supply source

62, 63, 64: gas valve 65: remote plasma generator

66: control unit 70: radio frequency antenna

71: magnetic core cover 72: laser source

73: laser scanning line

Claims (20)

A reactor body forming a plasma discharge space; And And a capacitively coupled electrode assembly forming one surface of the plasma discharge space and having a common electrode and a plurality of split electrodes coupled to each other and generating plasma in the plasma discharge space. The method of claim 1, Two or more power sources for selectively supplying different frequencies to the capacitively coupled electrode assembly; And a switching circuit configured between said at least two power sources and said capacitively coupled electrode assembly to provide a selective electrical connection. The method of claim 1, And a current distribution circuit for controlling distribution of currents flowing to the plurality of split electrodes. The method of claim 3, And the current distribution circuit includes an automatic current balance circuit for automatically adjusting a mutual balance of currents supplied to the plurality of split electrodes. The method of claim 1, The common electrode A common electrode body and a plurality of trench regions formed in the common electrode body, And the plurality of split electrodes are installed in the plurality of trench regions. The method of claim 1, The capacitive coupling electrode assembly is Capacitively coupled plasma reactor comprising a plurality of insulating members, one end is spaced on one surface of the common electrode and one split electrode is mounted on the other end. The method of claim 1, The common electrode A common electrode body and a plurality of gas injection holes penetrating the common electrode body; And a gas supply unit for supplying a process gas into the reactor body through a plurality of gas injection holes of the common electrode at an outer side of the reactor body. The method of claim 7, wherein The gas supply unit A capacitively coupled plasma reactor comprising two or more independent gas supply channels. The method of claim 8, The common electrode body has a plurality of trench regions, And the plurality of gas injection holes comprises a first group of gas injection holes formed in the plurality of trench regions and a second group of gas injection holes formed in addition to the plurality of trench regions. The method of claim 9, And the plurality of split electrodes are installed in the plurality of trench regions. The method of claim 7, wherein And a remote plasma generator for supplying a remote plasma into the reactor body through the gas supply. The method of claim 1, The capacitively coupled electrode assembly further comprises a radio frequency antenna. The method of claim 1, And the capacitively coupled electrode assembly includes a plurality of permanent magnets alternately arranged in different polarities. The method of claim 1, And the capacitively coupled electrode assembly further comprises a cooling channel. The method of claim 1, A laser transmitting window formed in a part of the reactor body; And a laser source for injecting laser into the reactor body through the laser transmission window. Providing a reactor body defining a plasma discharge space; Providing a capacitively coupled electrode assembly forming one surface of the plasma discharge space and having a common electrode and a plurality of split electrodes coupled to each other and generating plasma in the plasma discharge space; Loading an object to be processed into the reactor body; Driving the common electrode and the plurality of split electrodes at a first frequency to introduce a first process gas into the reactor body and to proceed with the first process; And Driving the common electrode and the plurality of split electrodes at a second frequency different from the first frequency to introduce a second process gas into the reactor body and to proceed with the second process. Plasma treatment method using a combined plasma reactor. The method of claim 16, And the first process and the second process are plasma enhanced chemical vapor deposition (PECVD) processes. The method of claim 16, And the first and second processes are alternately repeated. The method of claim 16, And laser scanning the inside of the reactor body while the first or second process is in progress. 20. A semiconductor device having a laminated thin film manufactured by a plasma processing method using the capacitively coupled plasma reactor of claim 16.

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