KR101446553B1 - Multi inductively coupled dual plasma reactor with multi laser scanning line - Google Patents

Abstract

The multi-inductively coupled double plasma reactor having the multi-laser scanning line of the present invention comprises a first reactor body constituting a first plasma reactor, a second reactor body constituting a second plasma reactor, A first multi-inductive antenna assembly including a plurality of first antenna bundles for inducing plasma, a second multi-induction antenna including a plurality of second antenna bundles for inducing an inductively coupled plasma in the second reactor body, A main power source for supplying radio frequency power to the plurality of first and second antenna bundles and a plurality of laser scanning lines for forming a multi laser scanning line in the first and second reactor bodies, Laser source. According to the multi-inductively coupled dual plasma reactor having the multi-laser scanning line of the present invention, it is possible to generate a large-area plasma by expanding a plurality of antenna bundles suited to the size of the substrate to be processed in a large area, It is easy to make an area, a current is uniformly supplied by a current balancing circuit, and a uniform gas is supplied by one or more gas supply channels, so that a high density plasma can be uniformly generated. In addition, since the multiple inductive antenna assembly and the multi laser scanning line can be uniformly and widely scanned over the substrate to be processed, a large-sized plasma reactor for processing a substrate to be processed in a large area can be easily implemented, Can be efficiently improved and the process yield can be improved. Particularly, it is possible to simultaneously treat two or more substrates to be processed in a large area, thereby increasing the substrate throughput per unit area.

Plasma, inductively coupled, current balance, laser

Description

TECHNICAL FIELD [0001] The present invention relates to a multi-inductively coupled double plasma reactor having a multi-laser scanning line. [0002] MULTI INDUCTIVELY COUPLED DUAL PLASMA REACTOR WITH MULTI LASER SCANNING LINE [

The present invention relates to a dual plasma reactor for dual substrate processing, and more particularly, to a dual plasma reactor having a multi-inductive antenna assembly multi-laser scanning line installed in a double manner to more uniformly generate a large area plasma, To a multi-inductively coupled double plasma reactor having a multi-laser scanning line capable of increasing plasma processing efficiency.

A plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used in gas excitation to generate active gases including ions, free radicals, atoms, and molecules. The active gas is widely used in various fields and is typically used in a variety of semiconductor manufacturing processes such as etching, deposition, cleaning, and ashing.

Plasma sources for generating plasma are various, and examples thereof include capacitive coupled plasma and inductive coupled plasma using a radio frequency. Capacitively coupled plasma sources have the advantage that they have higher capacity for process control than other plasma sources because of their accurate capacitive coupling and ion control capability. On the other hand, because the energy of the radio frequency power source is almost exclusively coupled to the plasma through capacitive coupling, the plasma ion density can only be increased or decreased by increasing or decreasing the capacitively coupled radio frequency power. However, an increase in radio frequency power increases the ion impact energy. As a result, radio frequency power is limited in order to prevent damage due to ion bombardment.

On the other hand, it is known that an inductively coupled plasma source can easily increase the ion density according to the increase of a radio frequency power source, and accordingly, the ion impact is relatively low and is suitable for obtaining a high density plasma. Thus, inductively coupled plasma sources are commonly used to obtain high density plasma. Inductively coupled plasma sources are typically developed using a RF antenna or a transformer coupled plasma (also referred to as a transformer coupled plasma). Techniques are being developed to improve the characteristics of plasma by adding electromagnets or permanent magnets thereto or adding capacitive coupling electrodes, and to improve reproducibility and controllability.

As a radio frequency antenna, a spiral type antenna or a cylinder type antenna is generally used. A radio frequency antenna is disposed outside a plasma reactor and delivers induced electromotive force into a plasma reactor through a dielectric window, such as quartz. Inductively coupled plasma using radio frequency antenna is relatively easy to obtain high density plasma, but plasma uniformity is affected by the structural characteristics of the antenna. Therefore, we are trying to obtain uniform high density plasma by improving the structure of radio frequency antenna.

However, in order to obtain a large-area plasma, it is difficult to increase the structure of the antenna or increase the power supplied to the antenna. For example, it is known that a non-uniform plasma is generated in the form of a radiation due to a standing wave effect. In addition, when high power is applied to the antenna, the capacitive coupling of the radio frequency antenna increases, so that the dielectric window must be made thick. As a result, the distance between the radio frequency antenna and the plasma increases, Problems arise.

Inductively coupled plasma using a transformer induces a plasma inside a plasma reactor using a potentiometer. This inductively coupled plasma completes the secondary circuit of the transformer. Conventional transformer-coupled plasma technologies have been developed in such a manner that an external discharge tube is placed in a plasma reactor or a closed core is mounted in a toroidal chamber or a transformer core is embedded in a plasma reactor. ought.

This transformer coupled plasma improves plasma reactor characteristics and energy transfer characteristics by improving the structure of the plasma reactor and improving the coupling structure of the transformer. Particularly, in order to obtain a large-area plasma, the structure of the transformer and the plasma reactor is improved, or a plurality of external discharge tubes are provided or the number of embedded transformer cores is increased. However, simply increasing the number of external discharge tubes or increasing the number of embedded transformer cores makes it difficult to uniformly obtain a high-density large-area plasma.

On the other hand, the enlargement of the substrate to be processed causes the enlargement of the overall production equipment. The enlargement of the production facilities increases the overall equipment area and consequently increases the production costs. Therefore, there is a demand for a plasma reactor and a plasma processing system capable of minimizing a facility area as much as possible. Particularly, in the semiconductor manufacturing process, productivity per unit area is one of the important factors affecting the final product price. Thus, techniques for efficiently arranging the configurations of production facilities as a method for increasing the productivity per unit area are provided. For example, there is provided a plasma reactor that processes two substrates to be processed in parallel. However, plasma reactors for treating most of two substrates to be processed in parallel have two plasma sources, so that the actual process facilities are not minimized.

If two or more plasma reactors are vertically or horizontally arranged in parallel, it is possible to share a common part of each structure and to process two substrates to be processed in parallel by one plasma source. It is possible to obtain various benefits by minimization.

In recent years, the semiconductor manufacturing industry has been further improved due to various factors such as miniaturization of semiconductor devices, enlargement of substrates to be processed such as a silicon wafer substrate, a glass substrate or a plastic substrate for manufacturing a semiconductor circuit, A plasma processing technique is required. In particular, there is a demand for an improved plasma source and a plasma processing technique having excellent processing capability for a large-area substrate to be processed. Further, various semiconductor manufacturing apparatuses using lasers are being provided. A semiconductor manufacturing process using a laser is widely applied to various processes such as deposition, etching, annealing, cleaning, and the like on a substrate to be processed. The above-described problems also exist in the case of such a semiconductor manufacturing process using a laser.

It is an object of the present invention to provide a multi-inductively coupled double plasma reactor having a multi-laser scanning line capable of uniformly generating and holding a large-area plasma.

Another object of the present invention is to provide a multi-inductive coupling device having a multi-laser scanning line having a multi-laser scanning line with high substrate throughput per unit area, which can easily produce large- And to provide a dual plasma reactor.

According to an aspect of the present invention, there is provided a multi-inductively coupled double-plasma reactor having a multi-laser scanning line. A multi-inductively coupled double plasma reactor having a multi-laser scanning line of the present invention comprises: a first reactor body constituting a first plasma reactor; A second reactor body constituting a second plasma reactor; A first multi-inductive antenna assembly including a plurality of first antenna bundles for inducing inductively coupled plasma within the first reactor body; A second multi-inductive antenna assembly including a plurality of second antenna bundles for inducing inductively coupled plasma within the second reactor body; A main power supply for supplying radio frequency power to the plurality of first and second antenna bundles; And a laser source for constructing a multi-laser scanning line including a plurality of laser scanning lines in the first and second reactor bodies.

In one embodiment, the first multiple inductive antenna assembly comprises: a first multiple discharge chamber body having a first multiple discharge chamber in which the plurality of first antenna bundles are installed; A plurality of gas inlets provided in the first multiple discharge chamber body to inject the reaction gas into the first multiple discharge chamber; And a gas injection slit formed in the multiple discharge chamber body to open into the interior of the reactor body in the first multiple discharge chamber, wherein the second multiple inductive antenna assembly comprises: A second multiple discharge chamber body having two multiple discharge chambers; A plurality of gas inlets provided in the second multiple discharge chamber body to inject the reaction gas into the second multiple discharge chamber; And a gas injection slit formed in the multiple discharge chamber body to open into the interior of the reactor body in the second multiple discharge chamber.

In one embodiment, the first and second discharge chamber bodies each include another plurality of gas inlets that do not pass through the first and second multiple discharge chambers.

In one embodiment, a distribution circuit is provided for distributing radio frequency power from the main power source to the first and second antenna bundles.

In one embodiment, an impedance matcher is provided between the main power source and the distribution circuit to perform impedance matching.

In one embodiment, the distribution circuit includes a current balancing circuit that regulates the balance of current supplied to the plurality of first and second antenna bundles.

In one embodiment, the current balancing circuit includes a plurality of transformers driving the plurality of first and second antenna bundles in parallel and balancing currents, the primary sides of the plurality of transformers being connected in series, And is connected to the plurality of first and second antenna bundles correspondingly.

In one embodiment, the secondary sides of the plurality of transformers each include a grounded intermediate tap, one end of the secondary side outputs a positive voltage and the other end outputs a negative voltage, and the constant voltage is applied to the plurality of first and second The one end of the antenna bundle provides the negative voltage to the other end of the plurality of antenna bundles.

In one embodiment, the current balancing circuit includes a voltage level regulating circuit capable of varying the current balance regulating range.

In one embodiment, the current balancing circuit includes a compensation circuit for compensation of leakage current.

In one embodiment, the current balancing circuit includes a protection circuit for preventing damage by transient voltages.

In one embodiment, the apparatus includes a gas supply unit for supplying gas into the first and second reactor bodies through the first and second multiple inductive antenna assemblies.

In one embodiment, the gas supply part includes at least two gas supply channels having independent gas supply paths.

In one embodiment, the first and second reactor bodies have a support in which a substrate to be processed is placed, and the support is either biased or not biased.

In one embodiment, the supports are biased by a single frequency power source or two or more different frequency power sources.

In one embodiment, the support comprises an electrostatic chuck.

In one embodiment, the support includes a heater.

In one embodiment, the support has a linear or rotationally movable structure parallel to the substrate to be processed, and includes a drive mechanism for linearly or rotationally moving the support.

In one embodiment, the first and second reactor bodies include a laser-transmissive window for scanning a laser beam therein, and the laser source is coupled to the interior of the first and second reactor bodies through the laser- To form a multi-laser scanning line to be scanned with a laser beam.

In one embodiment, the laser-transmissive window comprises two windows that are configured to face the sidewalls of the first and second reactor bodies, wherein the laser source is configured to direct the laser beam generated from the one or more laser sources to the two And a plurality of reflectors for reflecting the windows therebetween to form the multi-laser scanning lines.

In one embodiment, the multi-laser scanning line is disposed between each of the plurality of first and second antenna bundles, the plurality of first and second antenna bundles, and the plurality of first and second antenna bundles, A structure positioned between the supports on which the processing substrate is placed or a structure in which a gas inlet for introducing a reaction gas into the first and second reactor bodies and a structure located between the plurality of first and second antenna bundles .

In one embodiment, the multi-laser scanning line is configured such that the reactive gas introduced into the first and second reactor bodies generates electrical energy by the first and second multiple inductive antenna assemblies and thermal energy by the multi- A structure in which the reaction gas introduced into the first and second reactor bodies first receives electrical energy transferred from the first and second multiple inductive antenna assemblies, And a structure in which the reaction gas introduced into the body receives heat energy by the multi-laser scanning line first.

According to the multi-inductively coupled dual plasma reactor having the multi-laser scanning line of the present invention, it is possible to generate a large-area plasma by expanding a plurality of antenna bundles suited to the size of the substrate to be processed in a large area, It is easy to make an area, a current is uniformly supplied by a current balancing circuit, and a uniform gas is supplied by one or more gas supply channels, so that a high density plasma can be uniformly generated. In addition, since the multiple inductive antenna assembly and the multi laser scanning line can be uniformly and widely scanned over the substrate to be processed, a large-sized plasma reactor for processing a substrate to be processed in a large area can be easily implemented, Can be efficiently improved and the process yield can be improved. Particularly, it is possible to simultaneously treat two or more substrates to be processed in a large area, thereby increasing the substrate throughput per unit area.

For a better understanding of the present invention, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. The embodiments of the present invention may be modified into various forms, and the scope of the present invention should not be construed as being limited to the embodiments described in detail below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Therefore, the shapes and the like of the elements in the drawings can be exaggeratedly expressed to emphasize a clearer description. It should be noted that the same members in the respective drawings may be denoted by the same reference numerals. Detailed descriptions of well-known functions and constructions which may be unnecessarily obscured by the gist of the present invention are omitted.

1 is a view illustrating a multiple inductively coupled double plasma reactor according to a preferred embodiment of the present invention.

1, a dual plasma reactor 2 according to a preferred embodiment of the present invention comprises first and second plasma reactors 10, 10 with first and second reactor bodies 11, 16 constructed in parallel, First and second multiple inductive antenna assemblies 30a and 30b and a laser source 80 for inducing a plasma discharge inside the first and second reactor bodies 11 and 16, respectively. A gas supply unit 20 is provided between the first and second multiple inductive antenna assemblies 30a and 30b. The first and second reactor bodies 11 and 16 are supported such that the supports 12 and 17 on which the substrates 13 and 18 are placed face the first and second multiple inductive antenna assemblies 30a and 30b, Respectively. The gas supply unit 20 is disposed between the first and second multiple inductive antenna assemblies 30a and 30b and supplies gas supplied from a gas park (not shown) to the first and second multiple inductive antenna assemblies 30a and 30b And is supplied into the first and second reactor bodies 11 and 16 through a plurality of gas injection ports 36a and 36b. The radio frequency power source generated from the main power source 40 is supplied to the first and second multiple inductive antenna assemblies 30a and 30b via the impedance matcher 41 and the distribution circuit 50, 2 antenna bundles 33a and 33b. The laser source 80 provides a laser for constructing a multi-laser scanning line made up of a plurality of laser scanning lines 82 inside the first and second reactor bodies 11 and 16. Plasma is generated in the first and second reactor bodies 11 and 16 by the first and second multiple induction antenna assemblies 30a and 30b and the multi laser scanning line to be supplied to the target substrates 13 and 18 Substrate processing is performed.

The first and second plasma reactors 10 and 16 are provided with first and second reactor bodies 11 and 16 and supports 12 and 17 on which the substrates 13 and 18 are placed. The first and second reactor bodies 11 and 16 may be made of a metal material such as aluminum, stainless steel, copper or a coated metal such as anodized aluminum or nickel plated aluminum. Or a refractory metal. Alternatively, the first and second reactor bodies 11 and 16 may be wholly or partly made of an electrically insulating material such as quartz or ceramic. As such, the first and second reactor bodies 11,16 may be made of any material suitable for the intended plasma process to be performed. The structure of the first and second reactor bodies 11 and 16 may be a structure suitable for the uniform generation of the plasma and according to the substrates 13 and 18, for example, a circular structure or a rectangular structure, Lt; / RTI >

The processed substrates 13 and 18 are substrates such as a wafer substrate, a glass substrate, a plastic substrate, and the like for manufacturing various devices such as, for example, semiconductor devices, display devices, solar cells and the like. The first and second plasma reactors 10, 16 are connected to a vacuum pump (not shown). The first and second plasma reactors 10 and 16 are subjected to plasma processing on the substrates 13 and 18 under a low-pressure state at atmospheric pressure or lower. However, the first and second plasma reactors 10 and 16 of the present invention can also be implemented as an atmospheric plasma processing system for processing substrates to be processed at atmospheric pressure.

2 is a partial cross-sectional view of the lower portion of the plasma reactor showing the gas supply configured between the first and second multiple inductive antenna assemblies;

Referring to FIG. 2, the gas supply unit 20 is configured between the first and second multiple inductive antenna assemblies 30a and 30b. The gas supply unit 20 includes a plurality of gas supply pipes 21 connected to a gas supply source (not shown). The plurality of gas supply pipes (21) are each provided with a regulating valve (25) capable of independently controlling the gas supply flow rate. Alternatively, it is also possible to control the gas supply flow rate collectively for the plurality of gas supply pipes 21 or to control the gas supply flow rate in a mixed manner. Alternatively, it is also possible to control the entire and individual gas supply flow rates for a plurality of gas supply pipes 21. The plurality of gas inlet pipes 23 are connected to the plurality of gas inlet openings 36a and 36b of the first and second multiple inductive antenna assemblies 30a and 30b. The gas supplied from the gas supply source is evenly distributed through the plurality of gas supply pipes 21 and is supplied to the first and second reactor bodies 11 and 12 through the plurality of gas injection holes 24 and the corresponding plurality of gas inlets 36a and 36b, 16).

The first and second multiple inductive antenna assemblies 30a and 30b may include first and second multiple discharge chambers 35a and 35b having a plurality of first and second antenna bundles 31a and 31b, And a second multiple discharge chamber body (34a, 24b). The first and second multiple discharge chamber bodies 34a and 34b include a plurality of gas inlets 36a and 36b for injecting a reaction gas into the first and second multiple discharge chambers 35a and 35b. The first and second multiple discharge chamber bodies 34a and 34b are formed in the first and second multiple discharge chambers 35a and 35b with gas injection slits 35a and 35b formed to open into the first and second reactor bodies 11 and 16, (32a, 32b). The first and second antenna bundles 31a and 31b have a linear structure that extends long inside the first and second reactor bodies 11 and 16, for example, as shown in FIG. 5 or 6 And antenna protection covers 33a and 33b. The antenna protection covers 33a and 33b are made of an insulator material.

The first and second antenna bundles 31a and 31b are spaced from the sidewalls of the first and second multiple discharge chambers 35a and 35b. The first and second multiple discharge chambers 35a and 35b are longitudinally formed in the first and second multiple discharge chamber bodies 34a and 34b. The sectional structures of the first and second multiple discharge chambers 35a and 35b may have a square or circular structure, as shown in FIG. 3 or FIG. It is preferable that the first and second antenna bundles 31a and 31b and the antenna protection covers 33a and 33b have a rectangular or circular cross-sectional structure. The first and second antenna bundles 31a and 31b can be fabricated by repeatedly winding a thin band-shaped conductor plate, and the winding direction can be vertical or horizontal as shown in FIG. 5 or 6. Or the first and second antenna bundles 31a and 31b may be constituted by being wound in a belt shape as shown in Fig. At this time, the structures of the first and second multiple discharge chambers 35a and 35b are also formed in a belt shape. The antenna protection covers 33a and 33b that surround the belt-shaped first and second antenna bundles 31a and 31b also have a suitable structure.

9 is a cross-sectional view of a first and a second multiple inductive antenna assembly modified with a dual gas supply structure.

9, the first and second multiple discharge chamber bodies 34a and 34b include a plurality of gas inlets 36a-1 and 36b-1 through the first and second multiple discharge chambers 35a and 35b, And a plurality of gas inlets 36a-2, 36b-2 that do not pass through the gas inlet. At this time, the reaction gas introduced into the first and second multiple discharge chambers 35a and 35b through the plurality of gas inlets 36a-1 and 36b-1 passes through the gas injection slits 32a-1 and 32b-1 . On the other hand, the reaction gas introduced into another plurality of gas inflow ports 36a-2 and 36b-2 is supplied to the plurality of gas injection holes 32a-2 and 32b-3 opened between the first and second multiple discharge chambers 35a and 35b, 32b-2. Although not shown in detail, the gas supply unit 20 also has two or more separate gas supply channels to separate and supply different gases into the first and second reactor bodies 11a and 11b, thereby improving the plasma processing efficiency .

FIGS. 10 to 12 are views for explaining various methods of constructing the multi-laser scanning lines.

Referring to Figs. 10-12, the first and second reactor bodies 11, 16 each have laser-transmissive windows 86, 87 for scanning a laser beam into the interior. The laser-transmissive windows 86 and 87 can be composed of two windows 86 and 87, respectively, which are configured to face the side walls of the first and second reactor bodies 11 and 16, respectively. The two windows 86 and 87 are respectively installed to face the first and second reactor bodies 11 and 16 so as to oppose each other, and can be configured as a slit structure having the same length. The laser source 80 includes one or more laser sources 84. The laser source 84 scans the laser beam into the interior of the first and second reactor bodies 11 and 16 through the laser transmission windows 86 and 87 to form the interior of the first and second reactor bodies 11 and 16 A plurality of laser scanning lines 82 are formed on the substrate 100 to form a multi-laser scanning line.

For example, as shown in FIG. 9, a plurality of laser sources 84 are arranged close to the laser-transmissive window 86 on one side, and a plurality A plurality of laser termination portions 85 may be formed. Alternatively, as shown in FIG. 10, a plurality of laser sources 84 may be spaced apart, and a plurality of reflectors 83 may be provided therebetween, so that the laser beam generated from the laser source 84 is transmitted through two laser- A plurality of laser scanning lines 82 can be formed by reflecting the laser beam 85 by reciprocatingly passing the laser beams 86 and 87 therebetween. Alternatively, as shown in Fig. 11, only one laser source 84 may be constituted and a plurality of reflectors 83 may be constituted. In this way, a multi-laser scanning line is constructed inside the first and second reactor bodies 11, 16 using one or more laser sources 84, a plurality of reflectors 83, and one or more laser terminations 85 . Although a more specific construction and description are omitted, it is well known to those skilled in the art that an optical system of a suitable structure can be used to scan the laser beam into the first and second reactor bodies 11 and 16 There will be.

13 is a diagram for explaining various relative arrangement methods of multi-laser scanning lines.

As shown in FIG. 13A, a multi-laser scanning line composed of a plurality of laser scanning lines 82 is located in an electromagnetic field formed between each of a plurality of first and second antenna bundles 31a and 31b Structure can be taken. Alternatively, as shown in FIG. 13 (b), the multi-laser scanning line is provided inside the first and second reactor bodies 11 and 16 and the plurality of first and second antenna bundles 31a and 31b And between the supported supports 12 and 17. Alternatively, as shown in Fig. 13 (c), the multi-laser scanning line may include gas inlets 36a and 36b for introducing the reaction gas into the first and second reactor bodies 11 and 16, And between the second antenna bundles 31a and 31b. In order to construct a multi-laser scanning line with such a structure, the first and second multiple inductive antenna assemblies 30a and 30b do not have the first and second multiple discharge chambers 35a and 35b, The threaded bodies 34a and 34b may be deformed into a suitable structure.

The relative arrangement of the multi-laser scanning lines and the plurality of first and second antenna bundles 31a and 31b is about which energy the reaction gas first receives energy. That is, as illustrated in FIG. 13 (a), the reaction gas introduced into the first and second reactor bodies 11 and 16 is separated by the plurality of first and second antenna bundles 31a and 31b It is possible to adopt a structure in which electromagnetic energy and thermal energy by the multi laser scanning line are mixedly received. Alternatively, as illustrated in FIG. 13 (b), the reaction gas introduced into the first and second reactor bodies 11 and 16 may be supplied to the first and second antenna bundles 31a and 31b, We can take a structure that accepts miraculous energy first. Alternatively, as illustrated in FIG. 13 (c), the reaction gas introduced into the first and second reactor bodies 11 and 16 may take a structure to first receive heat energy from the multi-laser scanning line.

The relative arrangement of the multi-laser scanning lines and the plurality of first and second antenna bundles 31a and 31b may be one or two or more structures. For this purpose, the laser source The configuration of the reflecting mirror 84, the reflecting mirror 83, and the laser terminating portion 85 and the arrangement structure thereof can be appropriately modified.

1, support bases 12 and 17 for supporting the target substrates 13 and 18 are provided in the first and second reactor bodies 11 and 16, respectively. The supports 12, 17 are connected to bias power sources 42, 43, 45, 46 and biased. For example, two bias power sources 42, 43, 45 and 46 supplying different radio frequency powers are electrically connected to the supports 12 and 17 via the impedance matchers 44 and 47 and biased . The dual biasing structure of the supports 12, 17 can facilitate plasma generation within the first and second reactor bodies 11, 16 and improve process yield by further improving plasma ion energy control. Or a single bias structure. Or the supports 12 and 17 may be deformed into a structure having a zero potential without supplying a bias power. And the substrate supports 12, 17 may comprise an electrostatic chuck. Or the substrate supports 12, 17 may comprise a heater.

The supports 12 and 17 may be of a fixed type. Or the supports 12 and 17 have linear or rotationally movable structures parallel to the substrates 13 and 18 and include drive mechanisms 4 and 5 for linearly or rotationally moving the supports 12 and 17 do. This moving structure of the supports 12 and 17 is intended to increase the processing efficiency of the substrates 13 and 18. In order to uniformly exhaust the gas discharged to the gas outlets 8 and 9 constituted on the upper portions of the first and second reactor bodies 11 and 16, the upper part of the inside of the first and second reactor bodies 11 and 16, Baffles 6 and 7 may be constructed.

The plurality of first and second antenna bundles 31a and 31b of the first and second multiple inductive antenna assemblies 30a and 30b are connected to the impedance matching device 41 And the distribution circuit 50 to induce inductively coupled plasma into the first and second reactor bodies 11 and 16. [ The main power source 40 may be configured using a radio frequency generator capable of controlling the output power without a separate impedance matcher. The radio frequency power generated from the main power supply 40 is supplied to the first and second antenna bundles 31a and 31b through the impedance matcher 41. [ To this end, a distribution circuit 50 may be provided. The distribution circuit 50 distributes the radio frequency power supplied from the main power source 40 to the first and second antenna bundles 31a and 31b to distribute the radio frequency power to the first and second antenna bundles 31a, 31b are driven in parallel. Preferably, the distribution circuit 50 may comprise a current balancing circuit. The current balancing circuit automatically balances the currents supplied to the first and second antenna bundles 31a and 31b. Thus, a large-area plasma can be generated and maintained more uniformly.

14 is a diagram showing an example of a distribution circuit.

Referring to FIG. 14, the distribution circuit 50 includes a plurality of transformers 52 for driving a plurality of first and second antenna bundles 31a and 31b in parallel and balancing currents. The primary side of the plurality of transformers 52 is connected in series between a power input terminal to which a radio frequency is inputted and the ground. One end of the secondary side is connected to a corresponding one of the first and second antenna bundles 31a and 31b, Are commonly grounded. The plurality of transformers 52 divides the voltage between the power input terminal and the ground equally and outputs the divided plurality of divided voltages to one end of the plurality of first and second antenna bundles 31a and 31b. The other ends of the plurality of first and second antenna bundles 31a and 31b are commonly grounded.

Since the currents flowing to the primary sides of the plurality of transformers 52 are the same, the power supplied to the plurality of first and second antenna bundles 31a and 31b is also the same. When the impedance of any one of the first and second antenna bundles 31a and 31b is changed to change the amount of current, a plurality of transformers 52 interact with each other to balance current. Thus, the currents supplied to the plurality of first and second antenna bundles 31a and 31b are uniformly continuously and automatically adjusted. In the plurality of transformers 52, the winding ratio of the primary side and the secondary side is basically set to 1: 1, but this can be changed.

Although not shown in the drawing, the distribution circuit 50 may include a protection circuit for preventing an excessive voltage from being generated in the plurality of transformers 52. [ The protection circuit prevents any one of the plurality of transformers 52 from being electrically opened to increase the transient voltage to the corresponding transformer. The protection circuit of this function may be realized by connecting a varistor to both ends of each of the plurality of transformers 52 or by using a constant voltage diode such as a Zener diode . A compensation circuit such as a compensation capacitor 51 for compensating the leakage current may be added to each of the transformers 52 in the distribution circuit 50.

15 to 20 are views showing various modifications of the distribution circuit, and FIG. 21 is a view showing an example in which a plurality of antenna bundles are connected in series.

Referring to Fig. 15, the one-way distribution circuit 50 includes intermediate taps on which the secondary sides of the plurality of transformers 52 are grounded, respectively, and outputs a constant voltage at one end of the secondary side and a negative voltage at the other end. The constant voltage is provided to one end of the plurality of first and second antenna bundles 31a and 31b and the negative voltage is provided to the other end of the first and second antenna bundles 31a and 31b.

Referring to Fig. 16, another modified distribution circuit 50a, 50b may be constituted by separate first and second current balance circuits 50a, 50b. The first and second current balancing circuits (50a, 50b) are connected in parallel to the impedance matcher (41). The first current balancing circuit 50a corresponds to a plurality of first antenna bundles 31a and the second current balancing circuit 50b corresponds to a plurality of second antenna bundles 31b.

17 and 18, the distribution circuit 50 of another modification may include a voltage level regulating circuit 60 capable of varying the current balance regulating range. The voltage level regulating circuit 60 includes a multi-tap switching circuit 62 for grounding the coil 61 and the multi-tap. The voltage level adjustment circuit 60 applies a variable voltage level to the current balance circuit 50 in accordance with the switching position of the multi-tap switching circuit 62, and the distribution circuit 50 is connected to the voltage level adjustment circuit 60 The current balance adjustment range is varied by the voltage level determined by the voltage level. 19 and 20, the voltage level adjusting circuits 60a and 60b may also be provided in the same manner as the first and second distributing circuits 50a and 50b. Alternatively, as shown in FIG. 21, the plurality of first and second antenna bundles 31a and 31b may be connected in series between the impedance matcher 41 and the ground without a distribution circuit. Or may be connected in parallel or connected in a serial-parallel hybrid manner.

As shown in FIG. 1, the dual plasma reactor 2 of the present invention exemplifies the first and second plasma reactors 10 and 15 in a vertically parallel structure, have.

The embodiments of the multi-inductively coupled double plasma reactor having the multi-laser scanning line of the present invention described above are merely illustrative, and those skilled in the art will appreciate that various modifications and equivalent It will be appreciated that other embodiments are possible. Accordingly, it is to be understood that the present invention is not limited to the above-described embodiments. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims. It is also to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.

 The multi-inductively coupled double plasma reactor having the multi-laser scanning line according to the present invention can be applied to a plasma processing process for forming various thin films such as the manufacture of a semiconductor integrated circuit, the manufacture of a flat panel display, Can be very useful. The multi-inductively coupled double plasma reactor having the multi-laser scanning line according to the present invention can generate a large-area plasma by expanding a plurality of antenna bundles suited to the size of the substrate to be processed in a large area, A uniform current supply is achieved by the current balance circuit, and a uniform gas supply is provided by the at least one gas supply channel, so that a high density plasma can be uniformly generated. In addition, since the multiple inductive antenna assembly and the multi laser scanning line can be uniformly and widely scanned over the substrate to be processed, a large-sized plasma reactor for processing a substrate to be processed in a large area can be easily implemented, Can be efficiently improved and the process yield can be improved.

1 is a view illustrating a multiple inductively coupled double plasma reactor according to a preferred embodiment of the present invention.

2 is a partial cross-sectional view of the lower portion of the plasma reactor showing the gas supply configured between the first and second multiple inductive antenna assemblies;

3 is an enlarged view showing one discharge chamber in which antenna bundles are installed.

4 is a view showing an example of a modification of the structure of the antenna bundle and the discharge chamber.

5 and 6 are diagrams illustrating an example of a winding method of an antenna bundle.

7 is a view showing a belt-shaped antenna bundle.

8 is a cross-sectional view of a multi-inductive antenna assembly with belt-shaped antenna bundles.

9 is a cross-sectional view of a first and a second multiple inductive antenna assembly modified with a dual gas supply structure.

FIGS. 10 to 12 are views for explaining various methods of constructing the multi-laser scanning lines.

13 is a diagram for explaining various relative arrangement methods of multi-laser scanning lines.

14 is a diagram showing an example of a distribution circuit.

15 to 20 are diagrams showing various modifications of the distribution circuit.

FIG. 21 is a diagram illustrating an example in which a plurality of antenna bundles are connected in series.

Description of the Related Art [0002]

4, 5: Driving mechanism 6, 7: Exhaust baffle

8, 9: gas outlet 10, 15: first and second plasma reactors

11, 16: first and second reactor bodies 12, 17: supports

13, 18: substrate to be processed 20: gas supply unit

21: gas supply pipe 23: gas inlet

30a, 30b: first and second multiple inductive antenna assemblies

31a, 31b: first and second antenna bundles 32a, 32b: gas injection slit

33a, 33b: Antenna protective cover 34a, 34b: First and second multiple discharge chamber body

35a, 35b: first and second multiple discharge chambers 36a, 36b: gas inlet

40: Main power source 41: Impedance matching device

42, 43: bias power source 44: impedance matcher

50: Distribution circuit 51: Compensation capacitor

52: Transformer 53: Middle tap

60: voltage level adjusting circuit 61: coil

62: Multi-tap switching circuit 80: Laser source

82: multi laser scanning line 83: reflector

85: laser terminating part

Claims (22)

A first reactor body constituting a first plasma reactor; A second reactor body constituting a second plasma reactor; A first multi-inductive antenna assembly including a plurality of first antenna bundles for inducing inductively coupled plasma within the first reactor body; A second multi-inductive antenna assembly including a plurality of second antenna bundles for inducing inductively coupled plasma within the second reactor body; A main power supply for supplying radio frequency power to the plurality of first and second antenna bundles; And And a laser source for forming a multi-laser scanning line including a plurality of laser scanning lines in the first and second reactor bodies, And a distribution circuit for distributing radio frequency power provided from the main power supply source to the plurality of first and second antenna bundles, Wherein the distribution circuit comprises a current balancing circuit for regulating a balance of current supplied to the plurality of first and second antenna bundles. The method according to claim 1, The first multi-discharge antenna assembly includes: a first multi-discharge chamber body having a first multi-discharge chamber in which the plurality of first antenna bundles are installed; A plurality of gas inlets provided in the first multiple discharge chamber body to inject the reaction gas into the first multiple discharge chamber; And a gas injection slit formed in the multiple discharge chamber body to open into the interior of the reactor body in the first multiple discharge chamber, Wherein the second multi-discharge antenna assembly comprises: a second multi-discharge chamber body having a second multi-discharge chamber in which the plurality of second antenna bundles are installed; A plurality of gas inlets provided in the second multiple discharge chamber body to inject the reaction gas into the second multiple discharge chamber; And a gas injection slit formed in the multiple discharge chamber body to open into the interior of the reactor body in the second multiple discharge chamber. 3. The method of claim 2, Wherein the first and second discharge chamber bodies each have a multi-laser scanning line that includes another plurality of gas inlets that do not pass through the first and second multiple discharge chambers. delete The method according to claim 1, And an impedance matching unit configured between the main power source and the distribution circuit to perform impedance matching. delete The method according to claim 1, Wherein the current balancing circuit includes a plurality of transformers driving the plurality of first and second antenna bundles in parallel and balancing current, Wherein the first side of the plurality of transformers are connected in series and the second side of the plurality of transformers has a multi laser scanning line connected to the plurality of first and second antenna bundles. 8. The method of claim 7, Wherein the secondary sides of the plurality of transformers include respective grounded intermediate taps, one end of the secondary side outputs a positive voltage and the other end outputs a negative voltage, Wherein the positive voltage has one end of the plurality of first and second antenna bundles and the negative voltage has a multi-laser scanning line provided at the other end of the plurality of antenna bundles. The method according to claim 1, Wherein the current balancing circuit comprises a voltage level regulation circuit capable of varying the current balance regulation range. The method according to claim 1, Wherein the current balancing circuit comprises a compensation circuit for compensation of leakage current. The method according to claim 1, Wherein the current balancing circuit comprises a multi-laser scanning line including a protection circuit for preventing damage due to transient voltage. The method according to claim 1, And a gas supply unit for supplying gas into the first and second reactor bodies through the first and second multiple inductive antenna assemblies. 13. The method of claim 12, Wherein the gas supply comprises at least two gas supply channels having independent gas supply paths. The method according to claim 1, Wherein the first and second reactor bodies have a support on which a substrate to be processed is placed, the support being biased or unbiashed. 15. The method of claim 14, Wherein the support has a multi-laser scanning line biased by a single frequency power source or two or more different frequency power sources. 15. The method of claim 14, Wherein the support has a multi-laser scanning line including an electrostatic chuck. 15. The method of claim 14, Wherein the support has a multi-laser scanning line including a heater. 15. The method of claim 14, Wherein the support has a structure that is linear or rotationally movable in parallel with the substrate to be processed, and has a multi-laser scanning line including a drive mechanism for linearly or rotationally moving the support. The method according to claim 1, Said first and second reactor bodies including a laser-transmissive window for scanning a laser beam therein, Wherein the laser source comprises a multi-laser scanning line having at least one laser source for forming a multi-laser scanning line by causing a laser beam to be scanned into the first and second reactor bodies through the laser- Inductively Coupled Double Plasma Reactor. 20. The method of claim 19, Wherein the laser-transmissive window comprises two windows configured to face sidewalls of the first and second reactor bodies, Wherein the laser source comprises a multi-inductive coupled double plasma having a multi-laser scanning line including a plurality of reflectors for reflecting the laser beam generated from the at least one laser source through the two windows to form the multi- Reactor. The method according to claim 1, The multi-laser scanning line A structure positioned between each of the plurality of first and second antenna bundles, a structure positioned between the plurality of first and second antenna bundles and a supporter on which a substrate to be processed provided in the reactor body is placed, And a multi-laser scanning line having at least one structure selected from the group consisting of a gas inlet for introducing a reactive gas into the first and second reactor bodies and a structure positioned between the plurality of first and second antenna bundles, Plasma Reactor. The method according to claim 1, The multi-laser scanning line A structure in which the reaction gas introduced into the first and second reactor bodies mixes together the electrical energy by the first and second multiple inductive antenna assemblies and the thermal energy by the multi laser scanning line, 2 structure in which the reaction gas introduced into the reactor body first receives electrical energy transmitted from the first and second multiple inductive antenna assemblies, or a structure in which the reaction gas introduced into the first and second reactor bodies is received by the multi- And a multi-laser scanning line including at least one structure selected from the group consisting of a structure that first receives thermal energy by the first laser source and a second laser source that receives heat energy by the second laser source.

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