KR20090072853A - Inductively coupled dual plasma reactor with multi laser scanning line - Google Patents

Abstract

An inductively coupled dual plasma reactor with a multi laser scanning line is provided to generate the plasma with high density by supplying a uniform current by a current balancing circuit. A first reactor body(11) includes a first plasma reactor. A second reactor body(16) includes a second plasma reactor. A first antenna assembly includes a plurality of first antenna protection tubes and first radio frequency antennas. A second antenna assembly includes a plurality of second antenna protection tubes and second radio frequency antennas. A main power supply source supplies the radio frequency source to the plurality of first and second radio frequency antennas. A laser supply source(80) includes a multi laser scanning line comprised of a plurality of laser scanning lines inside the first and second reactor bodies.

Description

INDUCTIVELY COUPLED DUAL PLASMA REACTOR WITH MULTI LASER SCANNING LINE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dual plasma reactor for dual substrate processing. Specifically, the present invention relates to a dual plasma reactor, and includes a dual antenna assembly and a multi laser scanning line to more uniformly generate a large-area plasma, thereby providing a plasma for a large-area target object. The present invention relates to a multiple inductively coupled dual plasma reactor having multiple laser scanning lines capable of increasing processing efficiency.

Plasma is a highly ionized gas containing the same number of positive ions and electrons. Plasma discharges are used for gas excitation to generate active gases containing ions, free radicals, atoms, molecules. The active gas is widely used in various fields and is typically used in a variety of semiconductor manufacturing processes such as etching, deposition, cleaning, ashing, and the like.

There are a number of plasma sources for generating plasma, and the representative examples are capacitive coupled plasma and inductive coupled plasma using radio frequency. Capacitively coupled plasma sources have the advantage of high process productivity compared to other plasma sources due to their high capacity for precise capacitive coupling and ion control. On the other hand, since the energy of the radio frequency power supply is almost exclusively connected to the plasma through capacitive coupling, the plasma ion density can only be increased or decreased by increasing or decreasing the capacitively coupled radio frequency power. However, increasing radio frequency power increases ion bombardment energy. As a result, in order to prevent damage due to ion bombardment, radio frequency power is limited.

On the other hand, the inductively coupled plasma source can easily increase the ion density with the increase of the radio frequency power source, the ion bombardment is relatively low, it is known to be suitable for obtaining a high density plasma. Therefore, inductively coupled plasma sources are commonly used to obtain high density plasma. Inductively coupled plasma sources are typically developed using a radio frequency antenna (RF antenna) and a transformer (also called transformer coupled plasma). The development of technology to improve the characteristics of plasma, and to increase the reproducibility and control ability by adding an electromagnet or a permanent magnet or adding a capacitive coupling electrode.

As the radio frequency antenna, a spiral type antenna or a cylinder type antenna is generally used. The radio frequency antenna is disposed outside the plasma reactor and transmits induced electromotive force into the plasma reactor through a dielectric window such as quartz. Inductively coupled plasma using a radio frequency antenna can obtain a high density plasma relatively easily, but the plasma uniformity is affected by the structural characteristics of the antenna. Therefore, efforts have been made to improve the structure of the radio frequency antenna to obtain a uniform high density plasma.

However, in order to obtain a large plasma, it is limited to widen the structure of the antenna or increase the power supplied to the antenna. For example, it is known that a non-uniform plasma is generated in the radiographic state by a standing wave effect. In addition, when high power is applied to the antenna, the capacitive coupling of the radio frequency antenna increases, so that the dielectric window must be thickened, thereby increasing the distance between the radio frequency antenna and the plasma, thereby lowering power transmission efficiency. Losing problems occur.

An inductively coupled plasma using a transformer induces a plasma inside a plasma reactor using a toilet transformer. The inductively coupled plasma completes a secondary circuit of the transformer. Conventional transformer-coupled plasma technologies have been developed by placing an external discharge tube in a plasma reactor or a closed core in a toroidal chamber or by embedding a transformer core inside a plasma reactor. ought.

The transformer coupled plasma improves the plasma characteristics and the transformer coupling structure to improve the plasma characteristics and energy transfer characteristics. In particular, in order to obtain a large-area plasma, the coupling structure of the transformer and the plasma reactor may be improved, a plurality of external discharge tubes may be provided, or the number of built-in transformer cores may be increased. However, simply increasing the number of external discharge tubes or increasing the number of transformer cores embedded therein makes it difficult to obtain high density large area plasma uniformly.

On the other hand, the increase in the size of the substrate to be processed causes the increase in the overall production equipment. Larger production facilities increase the overall plant area, resulting in increased production costs. Therefore, there is a need for a plasma reactor and a plasma processing system capable of minimizing the installation area. In particular, in the semiconductor manufacturing process, productivity per unit area is one of the important factors affecting the price of the final product. Thus, technologies are being provided to effectively arrange the components of a production plant in a way to increase productivity per unit area. For example, a plasma reactor for processing two substrates in parallel is provided. However, most plasma reactors that process two substrates to be processed in parallel are equipped with two plasma sources, which does not substantially minimize process equipment.

If two or more plasma reactors are arranged vertically or horizontally in parallel, the common part of each component can be shared and two substrates can be processed in parallel by one plasma source. There will be several benefits to minimization.

In recent years, the semiconductor manufacturing industry has been further improved due to various factors such as ultra miniaturization of semiconductor devices, the enlargement of silicon wafer substrates or substrates to be processed such as glass or plastic substrates for manufacturing semiconductor circuits, and the development of new materials to be processed. Plasma treatment technology is required. In particular, there is a need for improved plasma sources and plasma processing techniques that have good processing capabilities for large area substrates. Furthermore, various semiconductor manufacturing apparatuses using lasers have been provided. Semiconductor manufacturing processes using lasers have been widely applied to various processes such as deposition, etching, annealing, cleaning, and the like on a substrate to be processed. In the case of a semiconductor manufacturing process using such a laser, the above-described problems exist.

It is an object of the present invention to provide an inductively coupled dual plasma reactor having a multi-laser scanning line capable of generating and maintaining a large area of plasma uniformly.

Another object of the present invention is an inductively coupled double with a multi-laser scanning line that is easy to large area, which can generate high density plasma uniformly, and can process two or more large areas to be processed simultaneously, thus having high substrate throughput per facility area. It is to provide a plasma reactor.

One aspect of the present invention for achieving the above technical problem relates to an inductively coupled dual plasma reactor having a multi-laser scanning line. An inductively coupled dual plasma reactor having multiple laser scanning lines of the present invention comprises: a first reactor body constituting a first plasma reactor; A second reactor body constituting a second plasma reactor; A first antenna assembly comprising a plurality of first antenna protection tubes installed through the interior of the first reactor body and a first radio frequency antenna installed in the plurality of first antenna protection tubes; A second antenna assembly including a plurality of second antenna protection tubes installed through the inside of the second reactor body and a second radio frequency antenna installed in the plurality of second antenna protection tubes; A main power source for supplying radio frequency power to said plurality of first and second radio frequency antennas; And a laser source for constructing a multi-laser scanning line consisting of a plurality of laser scan lines in the first and second reactor bodies.

In one embodiment, the plurality of first and second antenna protection tubes each comprise a plurality of dielectric tubes arranged in parallel and linearly passing through the interior of the first and second reactor bodies.

In one embodiment, the first and second radio frequency antennas each consist of a single continuous antenna.

In one embodiment, the first and second radio frequency antennas are each composed of a plurality of discrete antennas discontinuous.

In one embodiment, a distribution circuit for distributing radio frequency power provided from said main power source to said plurality of separate antennas.

In one embodiment, an impedance matcher is arranged between the main power supply and the distribution circuit to perform impedance matching.

In one embodiment, the distribution circuit comprises a current balancing circuit for adjusting the balance of the current supplied to each of the plurality of separate antennas.

In one embodiment, the current balancing circuit comprises a plurality of transformers for balancing the current by driving each of the plurality of separate antennas, wherein the primary side of the plurality of transformers are connected in series, the secondary side is respectively Are correspondingly connected to a plurality of separate antennas.

In one embodiment, the secondary side of the plurality of transformers each comprises a grounded intermediate tap, one end of the secondary side outputs a constant voltage and the other end a negative voltage, respectively, the constant voltage is each of the plurality of separate antennas At one end of the negative voltage is provided to the other end of each of the plurality of separate antennas.

In one embodiment, the current balancing circuit includes a voltage level adjusting circuit that can vary the current balancing adjusting range.

In one embodiment, the current balancing circuit comprises a compensation circuit for compensation of leakage current.

In one embodiment, the current balancing circuit includes a protection circuit for preventing damage due to transient voltage.

In one embodiment, the gas supply unit for supplying gas into the interior of the first and second reactor body.

In one embodiment, the gas supply comprises at least two gas supply channels having gas supply paths independent of each other.

In one embodiment, the first and second radio frequency antenna is composed of a conductor tube for providing a flow path of the reaction gas therein, the plurality of first and second antenna protection tube and the first and second 2, the radio frequency antenna is provided with a plurality of gas injection holes respectively opened into the first and second reactor bodies.

In one embodiment, the first and second reactor bodies are provided with a support on which a substrate to be processed is placed, and the support is either biased or unbiased.

In one embodiment, the support is biased by a single frequency power supply or two or more different frequency power supplies.

In one embodiment, the support includes an electrostatic chuck.

In one embodiment, the support comprises a heater.

In one embodiment, the support has a structure that is linearly or rotationally movable parallel to the substrate to be processed, and includes a drive mechanism for linearly or rotationally moving the support.

In one embodiment, the first and second reactor bodies include a laser transmission window for injecting a laser beam therein, and the laser source is inside of the first and second reactor bodies through the laser transmission window. One or more laser sources for causing the laser beam to be scanned to form the multi laser scanning line.

In one embodiment, the laser transmission window comprises a plurality of windows configured to face the sidewalls of the first and second reactor bodies, wherein the laser source comprises a plurality of laser beams generated from the one or more laser sources. And a plurality of reflectors reflecting the window with the windows interposed therebetween to form the multi-laser scanning line.

In one embodiment, the multi-laser scanning line is positioned between each of the plurality of first and second antenna protection tubes, the plurality of first and second antenna protection tubes and the first and second reactors. A structure positioned between each of the supports on which the substrate to be disposed in the body is placed, or a gas inlet for introducing a reaction gas into the first and second reactor bodies and the plurality of first and second antenna protection tubes, respectively. It includes at least one structure selected from among the structures located between.

In one embodiment, the multi-laser scanning line is the reaction gas flowing into the first and second reactor body is mixed with electrical energy by the first and second radio frequency antenna and thermal energy by the multi-laser scanning line. Or a structure that accepts electrical energy delivered from the first and second radio frequency antennas first, or into the first and second reactor bodies. The introduced reactant gas includes at least one of the structures selected first to receive thermal energy by the multi-laser scanning line.

According to the inductively coupled dual plasma reactor having a multi-laser scanning line of the present invention, a large-area plasma can be generated by expanding a plurality of antenna bundles to suit the size of a large-area target substrate. It is easy to make and uniform current supply is made by the current balancing circuit, so that high density plasma can be generated uniformly. In addition, the antenna assembly and the multi-laser scanning line can be uniformly and widely scanned on the upper part of the target substrate, thereby easily implementing a large-area plasma reactor for processing a large-area target substrate in a double manner. Can be efficiently improved to improve process yield.

In order to fully understand the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Embodiment of the present invention may be modified in various forms, the scope of the invention should not be construed as limited to the embodiments described in detail below. This embodiment is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings and the like may be exaggerated to emphasize a more clear description. It should be noted that the same members in each drawing are sometimes shown with the same reference numerals. Detailed descriptions of well-known functions and configurations that are determined to unnecessarily obscure the subject matter of the present invention are omitted.

1 is a view showing an inductively coupled dual plasma reactor according to a preferred embodiment of the present invention.

Referring to FIG. 1, a dual plasma reactor 2 according to a preferred embodiment of the present invention includes a first and second plasma reactor 10 having first and second reactor bodies 11 and 16 configured in parallel. 15) first and second antenna assemblies 30 and 35 for inducing plasma discharge respectively within the first and second reactor bodies 11 and 16 and a laser source 80. The gas supply unit 20 is provided between the first and second antenna assemblies 30 and 35. The first and second reactor bodies 11 and 16 are installed on one side of the support 12 and 17 on which the substrates 13 and 18 are placed to face the first and second antenna assemblies 30 and 35. do. The gas supply unit 20 is configured between the first and second antenna assemblies 30 and 35 to supply gas provided from a gas park (not shown) through the plurality of gas inlets 32 and 38 to the first and second reactors. Supply to the inside of the body (11, 16). The radio frequency power generated from the main power supply 40 is provided to the first and second radio frequency antennas provided in the first and second antenna assemblies 30 and 35 through the impedance matcher 41 and the distribution circuit 50. Supplied to (31, 36). The laser source 80 provides a laser for constructing a multi-laser scanning line consisting of a plurality of laser scan lines 82 inside the first and second reactor bodies 11, 16. The plasma generated by the first and second antenna assemblies 30 and 35 and the multi-laser scanning lines are generated in the first and second reactor bodies 11 and 16, respectively, and the substrates to the substrates 13 and 18 are processed. Processing takes place.

The first and second plasma reactors 10 and 16 are provided with first and second reactor bodies 11 and 16 and supports 12 and 17 on which substrates 13 and 18 are to be placed. The first and second reactor bodies 11, 16 may be made of metal material such as aluminum, stainless steel, copper or coated metal, for example anodized aluminum or nickel plated aluminum. Alternatively, it may be made of refractory metal. As another alternative, it is also possible to fabricate the first and second reactor bodies 11, 16 in whole or in part with an electrically insulating material such as quartz, ceramic. As such, the first and second reactor bodies 11, 16 may be made of any material suitable for performing the intended plasma process. The structures of the first and second reactor bodies 11, 16 are suitable according to the substrates 13, 18 and for uniform generation of the plasma, for example circular or rectangular structures and any other structure. It can have

The substrates 13 and 18 to be processed are, for example, substrates such as wafer substrates, glass substrates, plastic substrates, and the like for manufacturing various devices such as semiconductor devices, display devices, solar cells, and the like. The first and second plasma reactors 10, 16 are connected to a vacuum pump (not shown). The first and second plasma reactors 10 and 16 are subjected to plasma processing on the substrates 13 and 18 in a low pressure state below atmospheric pressure. However, the first and second plasma reactors 10 and 16 of the present invention may also be implemented as an atmospheric pressure plasma processing system for treating a substrate under atmospheric pressure.

FIG. 2 shows a gas supply configured between the first and second antenna assemblies. FIG.

Referring to FIG. 2, the gas supply unit 20 is configured between the first and second antenna assemblies 30 and 35. The gas supply unit 20 includes a plurality of gas supply pipes 21 connected to a gas supply source (not shown). The plurality of gas supply pipes 21 are provided with control valves 25 that can control the gas supply flow rates independently of each other. Alternatively, the gas supply flow rates may be collectively controlled with respect to the plurality of gas supply pipes 21 or may be configured to be controlled in a mixed manner. Alternatively, the plurality of gas supply pipes 21 may be configured to enable control of the total and individual gas supply flow rates. The gas supply unit 20 may include two or more separate gas supply channels to separate different gases and supply the same into the reactor body 11 to increase plasma processing efficiency.

First and second gas injection surfaces 34 and 39 are provided with a plurality of gas supply pipes 21 interposed therebetween. The first gas injection surface 34 constitutes one side of the first reactor body 11, and the second gas injection surface 39 constitutes one side of the second reactor body 16. The first and second gas injection surfaces 34 and 39 are composed of a plurality of gas inlets 32 and 38. The plurality of gas inlets 23 of the plurality of gas supply pipes 21 correspond to the plurality of gas inlets 32 and 38 of the first and second gas injection surfaces 34 and 39. The gas provided from the gas supply source is evenly distributed through the plurality of gas supply pipes 21 so that the first and second reactor bodies 11, the plurality of gas inlets 23 and corresponding gas inlets 32, 38 are provided. 16) Evenly sprayed into the interior.

3 is a view showing a part of the reactor body in which the first and second antenna assemblies are installed.

Inside the first and second reactor bodies 11 and 16 in the middle of the gas supply unit 20, a plurality of antenna protection tubes 33 are arranged in parallel at a predetermined interval from the top to the bottom. The antenna protection tubes 33, 37 may be comprised of, for example, a cylindrical dielectric tube of linear construction, extending from one opposite side wall to the other side wall of each of the first and second reactor bodies 11, 16. Antenna protection tube 33 may be preferably constructed of a dielectric material, but other suitable materials may be used. The first and second radio frequency antennas 31 and 36 may be installed in a zigzag structure through the plurality of first and second antenna protection tubes 33 and 37 using one connected single antenna, respectively. One end of the first and second radio frequency antennas 31, 36 is connected in parallel to the distribution circuit 50, electrically connected to the main power supply 40 through an impedance matcher 41, and the other end is grounded. . Although the plurality of antenna protection tubes 33 and 37 are illustrated as having a linear structure arranged in parallel at a predetermined interval, the interval or arrangement may be appropriately modified for uniform generation of plasma and efficiency of substrate processing. The radio frequency antenna 31 may be constructed using a conductor material, which may use a hollow conductor tube and use it as a cooling water supply passage.

4 to 6 are views for explaining various configuration methods of a multi-laser scanning line.

4 to 6, the first and second reactor bodies 11, 16 are provided with laser transmission windows 86, 87, respectively, for scanning a laser beam therein. The laser transmissive windows 86, 87 may be comprised of a plurality of windows 86, 87 configured respectively to face the side walls of the first and second reactor bodies 11, 16. The plurality of windows 86 and 87 are respectively installed to face each other in the first and second reactor bodies 11 and 16. Alternatively, the first and second reactor bodies 11 and 16 may have a slit structure in which two windows each have the same length. The laser source 80 includes one or more laser sources 84. The laser source 84 scans the laser beam into the interior of the first and second reactor bodies 11, 16 through the laser transmission windows 86, 87 to provide an interior of the first and second reactor bodies 11, 16. A plurality of laser scanning lines 82 are formed in the multi laser scanning line.

For example, as shown in FIG. 4, a plurality of laser sources 84 are arranged in proximity to the laser transmission window 86 on one side, and correspondingly, a plurality of laser sources 84 in the vicinity of the laser transmission window 87 on the other side. Laser terminations 85 may be configured. Alternatively, as shown in FIG. 5, a plurality of laser sources 84 may be configured at intervals and a plurality of reflectors 83 may be installed therebetween so that the laser beams generated from the laser sources 84 may be separated into two laser transmission windows. The plurality of laser scanning lines 82 can be formed by reciprocating and reflecting with the 86 and 87 interposed therebetween. Alternatively, as shown in FIG. 6, only one laser source 84 may be configured and a plurality of reflectors 83 may be configured. As such, a multi-laser scanning line may be configured inside the first and second reactor bodies 11 and 16 using one or more laser sources 84, a plurality of reflectors 83, and one or more laser terminations 85. Can be. And although a more detailed configuration and description have been omitted, those skilled in the art will appreciate that an optical system of a suitable structure may be used to scan the laser beam into the interior of the first and second reactor bodies 11, 16. There will be.

7 is a view for explaining various relative arrangement methods of a multi-laser scanning line.

As shown in FIG. 7A, the multi-laser scanning line composed of the plurality of laser scanning lines 82 has a structure positioned between each of the plurality of first and second antenna protection tubes 33 and 37. Can be taken. Alternatively, as shown in (b) of FIG. 7, the multi-laser scanning line is provided inside the plurality of first and second antenna protection tubes 33 and 37 and the first and second reactor bodies 11 and 16. It may be a structure located between the provided support (12, 17). Alternatively, as shown in (c) of FIG. 7, the multi-laser scanning line may include a plurality of first and second gas inlets 32 and 38 for introducing a reaction gas into the first and second reactor bodies 11 and 16. It may take a structure located between the second antenna protective tube (33, 37).

The relative arrangement of such a multi-laser scanning line and a plurality of first and second antenna assemblies 30, 35 is about which reactant gas first receives energy. That is, as illustrated in FIG. 7A, the reaction gas introduced into the first and second reactor bodies 11 and 16 is transferred to the plurality of first and second radio frequency antennas 31 and 36. And electromagnetic energy and thermal energy by the multi-laser scanning line may be mixed. Alternatively, as illustrated in FIG. 7B, the reaction gas introduced into the first and second reactor bodies 11 and 16 is transferred from the plurality of first and second radio frequency antennas 31 and 36. We can take a structure that accepts electromagnetic energy first. Alternatively, as illustrated in (c) of FIG. 7, the reaction gas introduced into the first and second reactor bodies 11 and 16 may take the structure of first receiving thermal energy by the multi-laser scanning line.

The relative arrangement structure of the multi-laser scanning line and the plurality of first and second antenna assemblies 30 and 35 may be used in combination of one or more structures, and for this purpose, a laser source constituting the laser source 80. The structure and arrangement of the 84, the reflector 83, and the laser termination portion 85 can be modified as appropriate.

Again, referring to FIG. 1, the support 12, 17 for supporting the substrate 13, 18 is provided inside the first and second reactor bodies 11, 16. Supports 12 and 17 are connected and biased to bias power sources 42, 43, 45 and 46. For example, two bias power sources 42, 43, 45, 46, which supply different radio frequency power, are electrically connected and biased to the supports 12, 17 via impedance matchers 44, 47. . The dual bias structure of the supports 12 and 17 may facilitate plasma generation inside the first and second reactor bodies 11 and 16 and further improve plasma ion energy control to improve process yield. Alternatively, it may be modified to a single bias structure. Alternatively, the supports 12 and 17 may be modified to have a zero potential without supplying bias power. The substrate supports 12 and 17 may include an electrostatic chuck. Alternatively, the substrate supports 12 and 17 may include a heater.

Supports 12 and 17 may be of a fixed type. Alternatively, the supports 12, 17 have a structure that is linearly or rotatable in parallel with the feature substrates 13, 18, and include drive mechanisms 4, 5 for linearly or rotationally moving the supports 12, 17. do. This moving structure of the supports 12 and 17 is for increasing the processing efficiency of the substrates 13 and 18 to be processed. Exhaust baffles (6) are provided in the first and second reactor bodies (11, 16) for uniform exhaust of the gas discharged to the gas outlets (8, 9) configured on the first and second reactor bodies (11, 16). , 7) may be configured.

Meanwhile, the first and second radio frequency antennas 31 and 36 are driven by receiving the radio frequency power generated from the main power supply 40 through the impedance matcher 41 and the distribution circuit 50. Induced plasma is inductively coupled to the interior of the second reactor body (11, 16). The main power supply 40 may be configured using a radio frequency generator capable of controlling the output power without a separate impedance matcher. As described above, the first and second radio frequency antennas 31 and 36 are configured to zigzag the plurality of antenna protection tubes 33 and 37 using a single continuous antenna, respectively, as shown in FIG. As described above, it may be installed in a repeated structure that reciprocates two or more times with respect to one antenna protection tube 33 while reciprocating two or more times.

9 and 10 are diagrams for explaining a modified structure of a radio frequency antenna having a gas supply function. 11 is a cross-sectional view of a radio frequency antenna according to a modification.

9 to 11, the first and second antenna assemblies 30 ′ and 35 ′ according to the modification provide a conductor tube for providing a flow path of reaction gas into the radio frequency antenna 31 ′. It can be configured as. And the first and second antenna protection tubes 33 ', 37' and the first and second radio frequency antennas 31 ', 36' respectively open into the first and second reactor bodies 11, 16, respectively. A plurality of gas injection holes 70 are formed. The opened direction, the installation form and the number of the plurality of gas injection holes 70 can be modified appropriately.

12 is a diagram illustrating an example of configuring a radio frequency antenna with a plurality of separate antennas, and FIG. 13 is a diagram illustrating an example of a distribution circuit.

12 and 13, the first and second antenna assemblies 30 and 35 may be configured with a plurality of discontinuous radio frequency antennas 31 and 36, respectively. For example, a plurality of rod-shaped antennas may be provided in the plurality of first and second antenna protection tubes 33 and 37. In the case where the first and second radio frequency antennas 31 and 36 are configured in plural, the radio frequency power generated from the main power supply 40 is supplied to the plurality of first and second radio frequencies through the impedance matcher 41. The antennas 31 and 36 are provided. To this end, a distribution circuit 50 may be provided. The distribution circuit 50 distributes and supplies the radio frequency power provided from the main power supply 40 to the plurality of first and second radio frequency antennas 31 and 36 so as to be driven in parallel. Preferably, distribution circuit 50 may be comprised of a current balancing circuit. The current balancing circuit automatically balances the currents supplied to the plurality of first and second radio frequency antennas 31 and 36. Thus, the plasma of a large area can be generated and maintained more uniformly.

Referring to FIG. 13, the distribution circuit 50 includes a plurality of transformers 52 that drive a plurality of first and second radio frequency antennas 31 and 36 in parallel and balance current. The primary side of the plurality of transformers 52 is connected in series between a power input terminal to which a radio frequency is input and ground, and one end of the secondary side is correspondingly connected to the plurality of first and second radio frequency antennas 31 and 36. The other end is commonly grounded. The plurality of transformers 52 equally divide the voltage between the power input terminal and the ground and output the divided plurality of divided voltages to one ends of the plurality of first and second radio frequency antennas 31 and 36. The other ends of the plurality of first and second radio frequency antennas 31 and 36 are commonly grounded.

Since the current flowing to the primary side of the plurality of transformers 52 is the same, the power supplied to the plurality of first and second radio frequency antennas 31 and 36 is also the same. When the impedance of any one of the plurality of first and second radio frequency antennas 31 and 36 is changed to change the amount of current, the plurality of transformers 52 may interact with each other to achieve a current balance. Thus, the currents supplied to the plurality of first and second radio frequency antennas 31 and 36 are continuously and automatically adjusted uniformly with each other. In the plurality of transformers 52, the winding ratios of the primary side and the secondary side are basically set to 1: 1, but this can be changed.

Although not shown in the drawing, the distribution circuit 50 including the current balancing circuit as described above may include a protection circuit for preventing a transient voltage from being generated in the plurality of transformers 52. The protection circuit prevents any one of the plurality of transformers 52 from being electrically open to increase the transient voltage on the transformer. The protection circuit of this function may be implemented by connecting a varistor to both ends of each primary side of the plurality of transformers 52, or by using a constant voltage diode such as a Zener diode. Can be. In addition, a compensation circuit such as a compensation capacitor 51 for compensating for leakage current may be added to each transformer 52 in the distribution circuit 50.

14 to 19 show various modifications of the distribution circuit.

Referring to FIG. 14, the distribution circuit 50 of one variant includes an intermediate tap in which the secondary sides of the plurality of transformers 52 are grounded, respectively, and outputs a constant voltage at one end of the secondary side and a negative voltage at the other end thereof. The constant voltage is provided to one end of the plurality of first and second radio frequency antennas 31 and 36 and the negative voltage is provided to the other end of the first and second radio frequency antennas 31 and 36.

Referring to FIG. 15, another variant distribution circuit 50a, 50b may be composed of separate first and second current balancing circuits 50a, 50b. The first and second current balancing circuits 50a and 50b are connected in parallel to the impedance matcher 41. The first current balancing circuit 50a corresponds to the plurality of first antenna bundles 31a and the second current balancing circuit 50b corresponds to the plurality of second antenna bundles 31b, respectively.

16 and 17, another variant distribution circuit 50 may include a voltage level adjustment circuit 60 that can vary the current balancing adjustment range. The voltage level adjustment circuit 60 includes a coil 61 having a multi tap and a multi tap switching circuit 62 for connecting one of the multi taps to ground. The voltage level adjusting circuit 60 applies a voltage level that is varied according to the switching position of the multi-tap switching circuit 62 to the current balancing circuit 50, and the distribution circuit 50 supplies the voltage level adjusting circuit 60 to the voltage level adjusting circuit 60. The current balance adjustment range is changed by the voltage level determined by the. 18 and 19, the voltage level adjusting circuits 60a and 60b may be provided in the same manner when the first and second distribution circuits 50a and 50b are configured. Alternatively, the plurality of first and second radio frequency antennas 31 and 36 may be connected in parallel or in a parallel-parallel manner between the impedance matcher 41 and ground without a distribution circuit.

As described above, the dual plasma reactor 2 of the present invention illustrates an example in which the first and second plasma reactors 10 and 15 are implemented in a vertical parallel structure, but may be implemented in a horizontal parallel structure. have.

Embodiments of the inductively coupled dual plasma reactor having the multi-laser scanning line of the present invention described above are merely exemplary, and those skilled in the art to which the present invention pertains can make various modifications and equivalents therefrom. It will be appreciated that examples are possible. Therefore, it will be understood that the present invention is not limited only to the form mentioned in the above detailed description. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims. It is also to be understood that the present invention includes all modifications, equivalents, and substitutes within the spirit and scope of the invention as defined by the appended claims.

 The inductively coupled dual plasma reactor having the multi-laser scanning line of the present invention is used in the case of dual processing of the substrate to be processed in the plasma processing process for forming various thin films such as the manufacture of semiconductor integrated circuits, the manufacture of flat panel displays, and the manufacture of solar cells. It can be very useful. The inductively coupled dual plasma reactor having a multi-laser scanning line of the present invention can easily generate a large area plasma by expanding a plurality of antenna bundles to suit the size of a large-area target substrate. In addition, since a uniform current is supplied by the current balancing circuit, high density plasma can be generated uniformly. In addition, the antenna assembly and the multi-laser scanning line can be uniformly and widely scanned on the upper part of the target substrate, thereby easily implementing a large-area plasma reactor for processing a large-area target substrate in a double manner. Can be efficiently improved to improve process yield.

1 is a view showing an inductively coupled dual plasma reactor according to a preferred embodiment of the present invention.

FIG. 2 shows a gas supply configured between the first and second antenna assemblies. FIG.

3 is a view showing a part of the reactor body in which the first and second antenna assemblies are installed.

4 to 6 are views for explaining various configuration methods of a multi-laser scanning line.

7 is a view for explaining various relative arrangement methods of a multi-laser scanning line.

8 shows an example in which a radio frequency antenna is round tripped.

9 and 10 are diagrams for explaining a modified structure of a radio frequency antenna having a gas supply function.

11 is a sectional view of a radio frequency antenna according to a modification.

12 is a diagram illustrating an example of configuring a radio frequency antenna with a plurality of separate antennas.

13 is a diagram illustrating an example of a distribution circuit.

14 to 19 show various modifications of the distribution circuit.

* Description of the symbols for the main parts of the drawings *

4, 5: drive mechanism 6, 7: exhaust baffle

8, 9: gas outlet 10, 15: first, second plasma reactor

11, 16: first and second reactor bodies 12, 17: support

13, 18: to-be-processed substrate 20: gas supply part

21: gas supply pipe 23: gas inlet

30, 35: first and second antenna assembly 31, 36: first and second radio frequency antenna

32, 38: gas inlet 33, 37: antenna protective tube

34, 34: 1st, 2nd gas injection surface 40: Main power supply source

41: impedance matcher 42, 43: bias power supply

44: impedance matcher 50: distribution circuit

51: compensation capacitor 52: transformer

53: middle tap 60: voltage level adjustment circuit

61: coil 62: multi-tap switching circuit

80: laser source 82: multi laser scanning line

83: reflector 84: laser source

85: laser termination 86, 87: laser transmission window

Claims (24)

A first reactor body constituting a first plasma reactor; A second reactor body constituting a second plasma reactor; A first antenna assembly comprising a plurality of first antenna protection tubes installed through the interior of the first reactor body and a first radio frequency antenna installed in the plurality of first antenna protection tubes; A second antenna assembly including a plurality of second antenna protection tubes installed through the inside of the second reactor body and a second radio frequency antenna installed in the plurality of second antenna protection tubes; A main power source for supplying radio frequency power to said plurality of first and second radio frequency antennas; And An inductively coupled dual plasma reactor having a multi-laser scanning line comprising a laser source for constructing a multi-laser scanning line consisting of a plurality of laser scan lines inside the first and second reactor bodies. The method of claim 1, The plurality of first and second antenna protection tubes each have an inductively coupled dual plasma reactor having a multi-laser scanning line comprising a plurality of dielectric tubes arranged in parallel and penetrating linearly inside the first and second reactor bodies. . The method of claim 1, Wherein said first and second radio frequency antennas comprise multiple laser scanning lines each consisting of a single continuous antenna. The method of claim 1, Wherein said first and second radio frequency antennas comprise multiple laser scanning lines each comprising a plurality of discrete antennas discontinuous. The method of claim 4, wherein An inductively coupled dual plasma reactor having a multi-laser scanning line comprising a distribution circuit for distributing radio frequency power provided from said main power source to said plurality of separate antennas. The method of claim 5, An inductively coupled dual plasma reactor having a multi-laser scanning line comprising an impedance matcher configured between the main power supply and the distribution circuit to perform impedance matching. The method of claim 5, And wherein said distribution circuit comprises a multi-laser scanning line comprising a current balancing circuit for adjusting the balance of current supplied to each of said plurality of separate antennas. The method of claim 7, wherein The current balancing circuit includes a plurality of transformers for driving current of each of the plurality of separate antennas in parallel and balancing the current; An inductively coupled dual plasma reactor having multiple laser scanning lines connected in series with the primary side of the plurality of transformers and the secondary side corresponding to each of the plurality of separate antennas. The method of claim 8, Secondary sides of the plurality of transformers include grounded intermediate taps, one end of the secondary side outputs a constant voltage and the other end of a negative voltage, respectively. And the constant voltage is at one end of each of the plurality of separate antennas and the negative voltage is provided at the other end of each of the plurality of separate antennas. The method of claim 7, wherein Wherein said current balancing circuit has a multi laser scanning line comprising a voltage level adjusting circuit capable of varying a current balancing adjusting range. The method of claim 7, wherein Wherein said current balancing circuit comprises a multi-laser scanning line comprising a compensation circuit for compensating for leakage current. The method of claim 7, wherein Wherein said current balancing circuit has a multi-laser scanning line comprising a protection circuit for preventing damage due to transient voltages. The method of claim 1, Inductively coupled dual plasma reactor having a multi-laser scanning line including a gas supply for supplying gas into the first and second reactor body. The method of claim 13, And the gas supply unit has a multi laser scanning line including at least two gas supply channels having gas supply paths that are independent of each other. The method of claim 1, The first and second radio frequency antennas are composed of a conductor tube for providing a flow path of reaction gas therein, and the plurality of first and second antenna protection tubes and the first and second radio frequency antennas are An inductively coupled plasma reactor having a multi-laser scanning line each having a plurality of gas injection holes opening into the first and second reactor bodies. The method of claim 1, Wherein the first and second reactor bodies have a support on which a substrate to be processed is placed, wherein the support is either biased or unbiased. The method of claim 16, The support is inductively coupled dual plasma reactor having multiple laser scanning lines biased by a single frequency power supply or two or more different frequency power supplies. The method of claim 16, The support is inductively coupled dual plasma reactor having a multi-laser scanning line including an electrostatic chuck. The method of claim 16, The support is inductively coupled dual plasma reactor having a multi-laser scanning line including a heater. The method of claim 16, And the support has a structure capable of linearly or rotationally moving in parallel with the substrate to be processed and having a multi-laser scanning line including a drive mechanism for linearly or rotationally moving the support. The method of claim 1, The first and second reactor bodies include a laser transmission window for scanning a laser beam therein; The laser source is guided with a multi-laser scanning line including one or more laser sources for causing the laser beam to be scanned through the laser transmission window into the interior of the first and second reactor bodies to form the multi-laser scanning line. Combined double plasma reactor. The method of claim 21, The laser transmission window includes a plurality of windows configured to face sidewalls of the first and second reactor bodies, The laser source includes an inductively coupled dual plasma reactor having a multi laser scanning line including a plurality of reflectors reflecting a laser beam generated from the at least one laser source with the plurality of windows interposed therebetween to form the multi laser scanning line. . The method of claim 1, The multi laser scanning line A structure positioned between each of the plurality of first and second antenna protection tubes, and a support on which a plurality of first and second antenna protection tubes and a substrate to be processed provided inside the first and second reactor bodies are placed. At least one selected from among a structure positioned between each other, or a structure positioned between each of the gas inlets for introducing a reaction gas into the first and second reactor bodies and each of the plurality of first and second antenna protection tubes. An inductively coupled dual plasma reactor having multiple laser scanning lines. The method of claim 1, The multi laser scanning line Reaction gas introduced into the first and second reactor body mixed with the electrical energy by the first and second radio frequency antenna and the heat energy by the multi-laser scanning line, the first and second 2 is a structure in which a reaction gas introduced into the reactor body first receives electrical energy transmitted from the first and second radio frequency antennas, or a reaction gas introduced into the first and second reactor bodies enters the multi-laser scanning line. An inductively coupled dual plasma reactor having a multi-laser scanning line comprising at least one of a structure that first receives thermal energy.

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